DE102004059389B4 - Semiconductor device with compensation metallization - Google Patents

Abstract

Semiconductor component having a first contact surface (41) having a semiconductor body (40) and a second contact surface (52) having terminal element (50, 50a, 50b, 50c, 50d), wherein the connection element (50, 50a, 50b, 50c, 50d) is formed as a bonding wire or as a connection clip or as a conductor track, the first contact surface (41) and the second contact surface (52) are spaced apart in a vertical direction (v), the first contact surface (41) in a horizontal direction (r, r1, r2) has a first edge (411) and the second contact surface (52) in the horizontal direction (r, r1, r2) has a second edge, between the first contact surface (41) and the second contact surface (52) a compensation metallization (10) is arranged, which serves to compensate for thermo-mechanical stresses, and the first contact surface (41) mechanically and electrically conductively connects to the second contact surface (52), the compensation metallization (10) in the horizo nal direction (r) is completely within the horizontal boundaries of the first contact surface (41) is arranged ...

Description

The invention relates to the contacting of a semiconductor device. Semiconductor devices typically include one or more semiconductor bodies which are electrically conductively contacted to a terminal at certain areas of their surface. For reasons of electrical conductivity, such connecting elements are formed predominantly of metals such as aluminum or copper.

The thermal expansion coefficient of these as well as other metals used for such connection elements differs greatly from the coefficient of thermal expansion coefficient of the semiconductor body. The linear coefficient of thermal expansion of copper, for example, is 17 ppm / K, that of aluminum even 25 ppm / K. In comparison, the linear thermal expansion coefficient of silicon is very low at about 3 ppm / K.

As a result of these very different coefficients of thermal expansion, high thermomechanical voltages occur in the region of the contact point between a connection element and a semiconductor body, which lead to a detachment of the connection element from the semiconductor, in particular in the case of frequent temperature changes with high temperature differences, which frequently occur, for example, in power semiconductor components.

A cross section through a typical contact point according to the prior art is in 1a shown. A semiconductor body 40 has on its surface a first contact surface 41 on that with a second contact surface 52 a connection element 50 is electrically connected. For this purpose, a thin first connection layer 3 provided between the first contact surface 41 and the second contact surface 52 is arranged and connects them mechanically and electrically conductive. The first connection layer 3 is typically formed of aluminum and has a thickness d3 of about 3 microns.

The connection element 50 is formed as a bonding wire and has a thermal expansion coefficient which is significantly greater than the thermal expansion coefficient of the semiconductor body 40 ,

How out 1b can be seen, occur at the second contact surface 52 Temperature-dependent thermomechanical stresses σ on the edge of the second contact surface 52 reach a maximum σ _max , whereby it during operation of the semiconductor device to one from the edge of the second contact surface 52 outgoing detachment of the connecting element 50 from the first connection layer 3 or from the first contact surface 41 can come.

From the US 2002/0149118 A1 For example, an arrangement is known in which a semiconductor chip for flip-chip mounting is provided with a metallization having a foot part and an end part arranged on the foot part, wherein the end part covers with a conductive filling material before the production of the flip-chip connection becomes. While the filler material is to be partially laterally displaced during the production of the flip-chip connection in which an electrically conductive connection is to be established between the semiconductor chip and a conductive film, a remainder of the filler material remains between the end portion and the conductive film.

The DE 38 88 476 T2 describes an electrical contact point on an electrode pad of a semiconductor chip. The pad includes a first raised portion formed on the electrode pad and a second raised portion formed on the first raised portion. The second raised portion has, in a plane parallel to the electrode pad, a cross-sectional area smaller than a cross-sectional area of the first raised portion in a plane parallel to the electrode pad.

In the DE 196 12 838 A1 a bonding connection is shown in which a bonding wire is connected to a semiconductor substrate. On the semiconductor substrate, a solder layer and thereon again a molybdenum disc are arranged, are rolled on the layers of nickel and aluminum.

From the EP 1 353 377 A2 For example, a semiconductor device having a semiconductor substrate contacted by a gold or gold alloy wire is known. For this purpose, a copper-containing aluminum alloy, a barrier metallization consisting of a multi-layer laminate of metal layers or alloy layers of titanium or titanium nitride, and an external electrode layer of a copper-containing aluminum alloy are applied successively to the semiconductor substrate, wherein the wire contacts the external electrode layer. The barrier metallization has a diameter of 130 μm, the external electrode layer has a diameter of 100 μm and a thickness of 0.35 μm.

The US 4,258,382 A. describes a bonding pad applied to an oxide layer of a substrate and extending in the opening of the oxide layer to the substrate. On the Bondpad a bump consisting of two metal layers is applied.

The EP 1 259 103 A1 relates to a multilayer board with a resin substrate. In a recess of the resin substrate, a chip is used, which is provided on its side facing away from the resin substrate top with aluminum metallizations. For the electrical contacting of the aluminum metallizations, successive two thin filling layers are applied to these, which are electrically contacted on their upper side facing away from the resin substrate by means of a through-connection located in a first resin layer. This through-connection is connected to a conductor track which is contacted laterally next to the aluminum metallizations by another further through-connection formed in a further resin layer. The further through-connection is connected to a further conductor track, which is provided with a ball of a Ballgridarrays.

From the DE 103 55 925 A1 is a power semiconductor module with several on conductor tracks of a Isolierstoffkörpers applied components known. The electrical contacting of the components takes place on their sides facing away from the Isolierstoffkörper means of a film composite. This consists, starting from the components, successively from an aluminum foil with a thickness between 100 microns and 400 microns, an insulating plastic film with a thickness between 10 .mu.m and 50 .mu.m, and a copper foil also with a thickness between 10 .mu.m and 50 .mu.m. Within the plastic film are laterally offset from the connection points of the components provided, which connect the aluminum foil electrically conductive with the copper foil.

The US Pat. No. 6,159,841 relates to a power MOSFET with a semiconductor body, on which for the electrical contacting sequentially a first metal bus, a second metal bus, as well as gold-plated drain and source terminals of nickel are applied. The first metal bus and the second metal bus each have a T-shaped cross-section, wherein the second metal bus has a greater width than the first metal bus.

In the DE 100 03 671 A1 For example, a chip-type semiconductor device having successively deposited thereon an aluminum electrode, a layer of a plurality of spaced-apart gold bumps, and an electrode of a precious metal-coated copper core is known.

The DE 103 34 943 A1 relates to an electrical power device having a semiconductor chip provided with a source conductor layer contacting the semiconductor chip at a plurality of contact pads. Completely or partially adjacent to the contact points is on the source conductor layer, a layer sequence with a first layer of titanium or a titanium alloy, a second layer of nickel, vanadium or an alloy of these elements, and a third layer of gold, silver, palladium or an alloy applied to these elements. The third layer is contacted by means of a bonding compression head, which is connected on its side facing away from the third layer to a flat printed circuit board.

In the DE 10 2004 036 140 A1 a semiconductor power semiconductor device is known, to which a multi-layer metallization comprising alternately successively arranged metallization and separation layers, and the thickness of which is between 500 nm and 50 microns. The metallization layers can be formed of aluminum, copper, gold, silver, tungsten or an alloy of these metals, the separating layers of titanium, titanium nitride, titanium tungsten, tungsten, tantalum, tantalum nitride, copper, gold or silver. In this multi-layer metallization, a bonding pad made of nickel, gold, silver or palladium is applied, whose thickness is 0.5 microns to 50 microns, and on which a bonding wire is bonded.

It is the object of the present invention to provide a semiconductor component having a semiconductor body, the connection elements of which are reliably and temperature-stable connected to a contact surface of the semiconductor body.

This object is achieved by a semiconductor device according to claim 1. Advantageous embodiments and further developments of the invention are the subject of dependent claims.

A semiconductor component according to the invention has a semiconductor body with a first contact surface and a connection element with a second contact surface. The connection element is designed as a bonding wire, as a connection clip or as a conductor track. The first contact surface has a first edge in a horizontal direction and the second contact surface has a second edge in the horizontal direction.

The first contact surface and the second contact surface are spaced apart in a vertical direction and mechanically and electrically connected by means of a compensation metallization arranged between them for compensation of thermo-mechanical stresses. In the horizontal direction, the balance metallization is disposed entirely within the horizontal boundaries of the first contact area, or the first edge coincides with the horizontal extension area of the balance metallization. Each of the vertical sections is spaced farther from the first edge in the horizontal direction than any other in the vertical direction closer to the first contact surface arranged vertical section.

A first of the vertical portion and a second one of the vertical portions located closer to the first contact surface than the first vertical portion have thicknesses of at least 15 μm each in the vertical direction and are made of copper, a copper alloy, aluminum, an aluminum alloy or a copper-aluminum alloy formed.

In addition, the compensation metallization has a thickness of at least 10 .mu.m, as well as at least two vertical sections formed as layers, which are arranged successively in the vertical direction successively, whereby a large part of the occurring thermo-mechanical stresses is reduced within the Ausgleichsmetallisierung. Between two vertical sections, a step is formed whose width in the horizontal direction is at least twice the thickness of the vertical section located closer to the first contact surface from the two vertical sections.

While conventional first interconnection layers merely serve to allow contactability of the semiconductor body, compensating metallization of a semiconductor device according to the invention for compensating for thermomechanical stresses is provided and therefore has a considerably greater thickness. The thicker such a compensation metallization is formed, the lower the gradient of the thermo-mechanical stress which must be dissipated in the region of the contact between the semiconductor body and the connection element.

Preferably, first connecting layers have thicknesses between 1 μm and 20 μm. The compensation metallization and the first connection layer can optionally be formed in one piece.

The mechanical and electrically conductive connection between the connection element and the compensation metallization takes place in the region of the second contact surface. In this case, the connection element can be connected directly to the Ausgleichsmetallisierung, as z. B. in the ultrasonic bonding of the connection element is the case.

Optionally, however, it is also possible to use additional material, for example a solder, which is arranged between the compensation metallization and the connection element.

To the occurring at the connection between the first contact surface and the connection element at the edges of the second contact surface maximum thermo-mechanical stress, as this is based on the 1a and 1b have been explained to further reduce, a stage arranged between two vertical sections of the compensation metallization is provided. The step results from the fact that the horizontal distance of the compensating metallization in a cutting plane perpendicular to the vertical direction of the compensation metallization increases monotonically with increasing vertical distance of the cutting plane from the first contact surface.

In the graded balance metallization, at least one vertical portion in the horizontal direction is preferably spaced farther from the edge of the first contact surface than any other vertical portion located closer to the first contact surface in the vertical direction.

In that each of the vertical sections in the horizontal direction is spaced farther from the first edge of the first contact surface than any other vertical section arranged closer to the first contact surface in the vertical direction, it is achieved that one between each two vertically adjacent or adjacent vertical sections Stage is formed.

According to a preferred embodiment, at least one vertical section is equidistant from the edge of the first contact surface in all its sectional planes perpendicular to the vertical direction in the horizontal direction. In the same way, this may also apply to several or all vertical sections of the compensating metallization, wherein different vertical sections in the horizontal direction are preferably at different distances from the edge of the first contact surface.

Sufficient degradation of the occurring in the region of the contact point thermo-mechanical stresses is achieved in that the measured width in the horizontal direction of a step at least twice their height, d. H. the thickness of the respective vertical section is. According to a preferred embodiment, the same also applies to the step which is formed between the second contact surface and the vertical section furthest from the first contact surface.

The invention will be explained in more detail in exemplary embodiments with reference to figures. In the figures show:

1a a cross section through a contact point of a semiconductor device according to the prior art, in which a connection element is electrically conductively connected to a first contact surface of a semiconductor body,

1b the course of the existing due to a change in temperature thermo-mechanical stress according to a contact point 1a .

2 a cross-section through a contact point of a semiconductor device according to the invention, in which a connection element designed as a bonding wire is connected by means of a compensation metallization with a first contact surface of a semiconductor body,

3 a cross section through a contact point of a semiconductor device according to the invention, in which the connection element is designed as a connection clip, which is connected by means of a solder connection layer with a arranged on a first contact surface compensation metallization of a semiconductor body,

4 a cross section through a portion of a semiconductor device according to the invention with a two vertical sections having tiered compensating metallization,

5 a cross-section through a semiconductor device having a semiconductor body having a plurality of interconnected by a conductor path first contact surfaces, wherein between each of the first contact surfaces and the conductor track a stepped compensation metallization is arranged,

6 a cross section through a semiconductor device according to the invention with a plurality of first contact surfaces, which are each connected by means of a compensation metallization according to the invention with conductor tracks, and

7 a perspective view of a semiconductor device according to the invention, by means of a pyramid-shaped connecting structure with a connection element 50 connected is.

In the figures, like reference numerals designate like parts with the same meaning.

2 shows a cross section through a portion of a semiconductor device with a semiconductor body 40 , the one arranged on its surface first contact surface 41 having. On the first contact surface 41 are in a vertical direction v consecutively a compensation metallization 10 and a connection element 50 arranged and firmly connected. The equalization metallization 10 comprises two in the vertical direction v stepwise successively arranged vertical sections 1 . 2 , Optionally, the compensation metallization 10 Also more than two stages, for example, pyramid-like, have arranged on each other vertical sections.

Due to the tiered arrangement they are distributed 1b known thermo-mechanical stresses on the various stages, ie instead of in 1b at the edge of the second contact surface 52 occurring maximum thermo-mechanical stress σ _max has the thermo-mechanical stress at the contact point 2 by the leveled compensation metallization 10 two maxima: a first maximum at the edge 521 the second contact surface 52 as well as a second maximum at the edge 112 the transition region between the first vertical section 1 and the second vertical section 2 , Since the first maximum and the second maximum are each lower than the voltage _maximum σ _{max in} accordance with 1b , indicates the connection between the connecting element 50 and the first contact surface 41 Overall, a much higher thermal shock resistance than the arrangement according to 1a ,

The first contact surface 41 extends in the horizontal direction r over a certain area, which in 2 by one with the reference numeral 41 provided with a brace, and has an edge in the horizontal direction r 411 on. In the present embodiment, this edge falls 411 with the horizontal extent of the compensation metallization 10 together. Deviating from this, the compensation metallization 10 in the horizontal direction r also completely within the horizontal boundaries of the first contact surface 41 be arranged.

The connection element 50 has a second contact surface 52 on which it is mechanically and electrically conductive with the compensating metallization 10 connected is. The second contact surface 52 extends in the horizontal direction r over the area in which the connecting element 50 and the compensation metallization 10 are positively connected with each other. According to a preferred embodiment of the invention, the connection element 50 a bonding wire.

The equalization metallization 10 has a thickness d10 of at least 10 microns and extends in the horizontal direction r with its edge 101 continue to the edge 411 the first contact surface 41 as the second contact surface 52 , By comparison with a simple first connecting layer according to the prior art, large thickness d10 of the compensating metallization 10 Thermo-mechanical stresses can also be very good within the compensation metallization 10 be reduced. Therefore, thicker compensation metallizations are also preferred 10 used with a thickness d10 of at least 20 microns, at least 30 microns or even at least 50 microns.

In order to obtain as uniform a distribution of the thermo-mechanical stresses in the region of the step transitions, it is advantageous if the thicknesses d1, d2 of the vertical sections 1 . 2 as equal as possible or in pairs by less than 10% of the thickness of each thicker vertical section 1 . 2 differ from each other. The thicknesses d1, d2 are preferably each at least 15 .mu.m, particularly preferably between 20 .mu.m and 200 .mu.m.

Particularly good conditions regarding the durability of a temperature change resistant connection between the first contact surface 41 and the connection element 501 are then reached when its minimum thickness d501 within the horizontal dimensions of the second contact surface 52 is identical to the thickness d10 of the compensation metallization 10 or is less than 20%, or more preferably less than 10% different. The thickness d501 is preferably between 15 μm and 100 μm.

3 shows a cross section through a semiconductor device according to the invention in the region of a contact point. Here, too, is between a first contact surface 41 a semiconductor body 40 and a second contact surface 52 a connection element 50 a level compensation metallization 10 arranged, which is the first contact surface 51 and the second contact surface 52 electrically conductive and mechanically interconnected.

In contrast to the contact point according to 2 is the connection element 50 not designed as a bonding wire but as a connection clip. Furthermore, between the first contact surface 41 and the equalization metallization 10 an optional first connection layer 3 and between the second contact surface 52 and the equalization metallization 10 an optional second connection layer 4 arranged. The first and / or the second connection layer 3 . 4 are formed of a material, for example a solder or a sintered silver layer (NTV method), which is between the compensating metallization 10 and the first contact surface 41 or between the equalization metallization 10 and the second contact surface 52 is introduced.

The thickness d3 of the first connection layer 3 is preferably less than 20 microns, the thickness d4 of the second compound layer 4 preferably less than 100 microns.

The construction of the compensation metallization 10 corresponds, in particular with respect to their stage arrangement, their thickness d10 and with respect to the thicknesses d1, d2 of their vertical sections, the compensation metallization 10 according to 2 ,

According to a preferred embodiment of the invention is also between the second connection layer 4 and the equalization metallization 10 formed a step, which leads to a further distribution of the thermo-mechanical stresses. The second connection layer 4 is in the horizontal direction r farther from the edge 411 the first contact surface 41 spaced as the second connection layer 4 facing side of the farthest from the first contact surface 41 spaced vertical section 1 ,

Another preferred embodiment of a semiconductor device according to the invention is in 4 shown. A semiconductor body formed of silicon or another semiconductor material 40 is by means of a solder 61 with a substrate 60 , For example, a ceramic substrate connected. For this purpose, the substrate 60 a metallization, not shown, for example, of copper, a copper alloy, aluminum, an aluminum alloy or a copper-aluminum alloy having, between the semiconductor body 40 and the substrate 60 is arranged.

On his the substrate 60 facing away from the semiconductor body 40 on its surface a first contact surface 41 on, to their electrical contact conductive with a second contact surface 52 a connection element 50 connected is. The connection element 50 is exemplified as a conductor track.

For the electrically conductive and mechanical connection of the semiconductor body 40 and the connection element 50 is one according to the compensation metallization 10 according to the 2 and 3 leveled compensation metallization 10 provided between the first and the second contact surface 41 . 52 is arranged.

While the compensation metallization 10 the second contact surface 52 immediately contacted, is between the first contact surface 41 and the equalization metallization 10 an optional first connection layer 3 intended. In contrast to 3 surmounts this first connection layer 3 the equalization metallization 10 , in particular that of the first contact surface 41 nearest vertical section 2 , in the horizontal direction, causing it at the first connection layer 3 to the formation of a stage 35 comes.

The equalization metallization 10 comprises two layered vertical sections 1 . 2 which are arranged successively in the vertical direction. Similarly, a compensation metallization 10 Any number of such stages arranged vertically on each other 1 . 2 exhibit.

Between the equalization metallization 10 and the first contact surface 41 is further an optional first interconnect layer 3 arranged. The first connection layer 3 has one compared to the thickness d10 of the compensation metallization 10 small thickness d3 of preferably less than 10 .mu.m, preferably about 3 .mu.m.

The connection structure starting from the first contact surface 41 or the first connection layer 3 over the vertical sections 1 . 2 the equalization metallization 10 and the second connection layer 4 up to the second contact surface 52 is preferably formed in stages. This means that, in particular, in each case two vertical sections arranged successively in the vertical direction v 1 . 2 a step 25 is trained.

Furthermore, also on the compensation metallization 10 in the area of the second contact surface 52 a step 15 to the connection element 50 be educated.

Is between the equalization metallization 10 and the second contact surface 52 an optional second connection layer, not shown 4 according to the connection layer 4 according to 3 arranged, so can the compensation metallization 10 a step to this connection layer 4 towards and the connection layer 4 have a step towards the connection element.

Overall, the connection structure in the embodiment according to 4 three steps 15 . 25 . 35 ,

In the horizontal direction r has the first contact surface 41 a border 411 on. The edge 411 facing side 12 of the vertical section 1 has a distance x1 from the edge in the horizontal direction r 411 on. Accordingly, the vertical section 2 on his edge 411 facing side 22 in the horizontal direction r a distance x2 to the edge 411 the first contact surface 41 on. Furthermore, the second contact surface 52 on her the edge 411 the first contact surface 41 facing side in the horizontal direction r a distance x52.

The equalization metallization 10 points to her the edge 411 the first contact surface 41 facing side in a sectional plane E, at a distance d0 from the first contact surface 41 is perpendicular to the vertical direction v, in the horizontal direction r a distance xE from the edge 411 which monotonously increases with the distance d0 of the sectional plane E. In this case, the horizontal distance within a vertical section 1 . 2 be constant. The steps 15 . 25 . 35 must however - deviating from the representations according to the 2 . 3 or 4 - Not necessarily be formed at right angles.

The equalization metallization 10 has two or more vertical sections 1 . 2 on, with the vertical sections 1 . 2 in particular by different materials and / or by different horizontal extent ranges can differ.

The vertical sections 1 . 2 in the compensation metallization 10 are formed of copper, a copper alloy, aluminum, an aluminum alloy or a copper-aluminum alloy. Most preferably, it is furthest from the first contact surface 41 spaced vertical section 1 formed of copper or a copper alloy with a high copper content.

On the semiconductor body 40 is a passivation 51 , For example, an imide, applied so that it is starting from the semiconductor body 40 over the horizontal edge of the first connection layer 3 extends and covers it. At this passivation 51 joins the surface of the stepped equalization metallization 10 one for the production of the compensation metallization 10 used metal masking 54 at.

An insulating film 55 that are in the area of the second contact surface 52 has an opening, preferably extends from the substrate 60 - Over the semiconductor body 40 , the passivation 51 , the metal masking 54 as well as the upper edge of the compensation metallization 10 , The insulating film 55 is used for electrical insulation of a deposited on this and designed as a conductor connection element 50 , As a result of in the insulating film 55 above the leveling metallization 10 arranged aperture contacts the Ausgleichsmetallisierung 10 the connection element 50 , This is an electrically conductive connection between the first contact surface 41 and the connection element 50 produced. The insulating film 55 Can also be used for isolation for more optional on the substrate 60 arranged conductor tracks are used.

The connection element 50 is preferably formed of copper or a copper alloy and produced by a galvanizing or cold gas spraying process. The production of such insulating film conductor arrangement is in the WO 03/030247 A2 described in more detail.

5 shows a cross section through a portion of a semiconductor device. A semiconductor body 40 is by means of a solder 61 with a substrate 60 connected. The semiconductor body 40 has several pairs of opposing first and second contact surfaces 41 . 52 on, between each one compensating metallization 10 is arranged. Such compensation metallization 10 can according to the in the 2 . 3 and 4 illustrated Ausgleichsmetallisierungen 10 be educated.

A trained as a conductor connection element 50 provides an electrically conductive connection between the balancing metallizations 10 and thus the first contact surfaces 41 with each other. Furthermore, the connection element 50 be used to the semiconductor body 40 to contact outside.

The compensation metallizations 10 are within a range in the horizontal direction due to the horizontal dimensions of the second contact surface 52 is limited, with the connection element 50 connected. Within this area the connection element points 50 a minimum thickness d501. Ideally, this minimum thickness d501 is identical to the thickness d10 of the compensation metallization 10 or preferably deviates less than 20% from the thickness d10 of the balance metallization 10 from.

To a sufficiently high current carrying capacity of the connection element 50 In order to achieve, it is advantageous in one in the horizontal direction r to the second contact surface 52 the respective compensation metallization 10 adjacent portion has a thickness d502 of the terminal element 50 to choose that is greater than the minimum thickness d501. The thickness d502 is preferably between 50 μm and 500 μm, more preferably between 50 μm and 100 μm.

One too 5 similar arrangement shows 6 , Again, on a semiconductor body 40 several with compensating metallizations 10 provided first contact surfaces 41 arranged. In the 6 illustrated Ausgleichsmetallisierungen 10 are not electrically connected to each other. For electrical contacting of the different compensation metallizations 10 are therefore independent connection elements 50a . 50b . 50c and 50d intended. These independent connection elements 50a . 50b . 50c . 50d are preferably according to conductor tracks 4 educated. Again, the connection elements 50a - 50d within the horizontal dimensions of the respective second contact surface 52 minimum thicknesses d501 as well as in the thicknesses d502 adjacent thereto in the horizontal direction r, the dimensions of which are preferably in accordance with the in 5 dimensions are selected.

The basis of the 5 and 6 presented variants for contacting multiple compensation metallizations 10 Of course, they can also be used mixed. By way of example, a semiconductor component according to the invention can have a plurality of connection elements which are electrically insulated from one another and each have at least one compensation metallization 10 or a first contact surface 41 contact electrically conductive. Furthermore, the first contact surfaces 41 or the compensation metallizations 10 not necessarily on the same semiconductor body 40 be arranged. Rather, it is also possible on a common substrate 60 a plurality of juxtaposed semiconductor bodies 40 to arrange, each of which with compensation metallizations 10 provided first contact surfaces 41 having. In this case, one or more connection elements 50 Ausgleichsmetallisierungen 10 or first contact surfaces 41 different semiconductor body 40 electrically conductively connect together. In this way, for example, a parallel connection of semiconductor chips can be achieved in order to increase the switching capacity of the relevant semiconductor component.

In the exemplary embodiments shown, the stepped structure of a connection structure was based on a contact point via an optional first connection layer, a compensation metallization, an optional second connection layer with a connection element with respect to a horizontal direction r. In a corresponding manner, the structure of the connecting structure can also be selected in each case stepped in horizontal opposing directions r.

As in 7 based on a pyramid-shaped connecting structure, in which between the first contact surface 41 a semiconductor body 40 and the second contact surface 52 a connection element 50 in the vertical direction v successively an optional first connection layer 3 and a compensation metallization 10 with vertical sections 2 and 1 are arranged, a stepped structure of the connecting structure can also be present in any horizontal directions r1, r2 and in their opposite directions.

The widths of all existing stages, of which in 7 the steps 15 . 25 . 35 In particular, different step widths can be shown in different horizontal directions r1, r2.

LIST OF REFERENCE NUMBERS

1

vertical section

2

vertical section

3

first connection layer

4

second connection layer

10

Ausgleichsmetallisierung

12

the edge facing side of the first vertical section

15

step

22

the edge facing side of the second vertical section

25

step

31

contacting

35

step

40

Semiconductor body

41

first contact surface

50

connecting element

50a-d

Connection elements (conductors)

51

passivation

52

second contact surface

54

metal mask

55

insulation

60

substratum

61

solder

101

the edge of the first contact surface facing side of the metallization

112

Edge of the transition region between the first vertical portion and the second vertical portion

411

Edge of the first contact surface

521

the edge of the first contact surface facing side of the first boundary layer

d0

Distance of the cutting plane from the first contact surface

d1

Thickness of the first vertical section

d2

Thickness of the second vertical section

d3

Thickness of the first tie layer

d4

Thickness of the second bonding layer

d10

Thickness of the compensation metallization

d501

Minimum thickness of the connection element within the first contact surface

D502

Thickness of the connection element outside the first contact surface

e

cutting plane

r

horizontal direction

r1

horizontal direction

r2

horizontal direction

v

vertical direction

x1

horizontal distance between the edge of the first contact surface and the first vertical portion

x2

horizontal distance between the edge of the first contact surface and the second vertical portion

x52

horizontal distance between the edge of the first contact surface and the edge of the second contact surface

xE

Horizontal distance between the compensation metallization and the edge of the first contact surface in a sectional plane of the compensation metallization.

Claims (18)

Semiconductor device having a first contact surface ( 41 ) having semiconductor body ( 40 ) and a second contact surface ( 52 ) having connecting element ( 50 . 50a . 50b . 50c . 50d ), wherein the connecting element ( 50 . 50a . 50b . 50c . 50d ) is designed as a bonding wire or as a connection clip or as a conductor, the first contact surface ( 41 ) and the second contact surface ( 52 ) are spaced apart in a vertical direction (v), the first contact surface ( 41 ) in a horizontal direction (r, r1, r2) has a first edge ( 411 ) and the second contact surface ( 52 ) in the horizontal direction (r, r1, r2) has a second edge, between the first contact surface ( 41 ) and the second contact surface ( 52 ) a compensation metallization ( 10 ), which serves to compensate for thermo-mechanical stresses, and which the first contact surface ( 41 ) mechanically and electrically conductive with the second contact surface ( 52 ), the compensating metallization ( 10 ) in the horizontal direction (r) completely within the horizontal boundaries of the first contact surface ( 41 ) or the first edge ( 411 ) with the horizontal extent of the compensating metallisation ( 10 ), the compensating metallisation ( 10 ) has a thickness (d10) of at least 10 μm, and at least two vertical sections arranged as layers in the vertical direction (v) ( 1 . 2 ), between two vertical sections ( 1 . 2 ) is formed a step whose width (x1-x2) in the horizontal direction (r) at least twice the thickness (d2) of the of the two vertical sections ( 1 . 2 ) closer to the first contact surface ( 41 ) arranged vertical section ( 2 ), each of the vertical sections ( 1 ) in the horizontal direction (r) farther from the first edge ( 411 ) is spaced more than any other in the vertical direction (v) closer to the first contact surface (FIG. 41 ) arranged vertical section ( 2 ), a first ( 1 ) Vertical section ( 1 ) in the vertical direction (v) has a thickness (d1) of at least 15 μm, a second vertical portion ( 2 ), which in the vertical direction (v) closer to the first contact surface ( 41 ) is arranged as the first vertical section ( 1 ), in the vertical direction (v) has a thickness (d2) of at least 15 microns, the first vertical portion ( 1 ) and the second vertical section ( 2 ) are formed of copper, a copper alloy, aluminum, an aluminum alloy or a copper-aluminum alloy. Semiconductor component according to Claim 1, in which at least one vertical section ( 1 . 2 ) in all its first contact area ( 41 ) parallel cutting planes (E) in the horizontal direction (r) equidistant from the first edge (E) 411 ) is spaced. Semiconductor component according to Claim 2, in which each vertical section ( 1 . 2 ) in all its to the first contact surface ( 41 ) parallel cutting planes (E) in the horizontal direction (r) equidistant from the first edge (E) 411 ) is spaced. Semiconductor component according to one of the preceding claims, in which the first vertical section (FIG. 1 ) has a thickness (d1) of between 20 μm and 200 μm. Semiconductor component according to one of the preceding claims, in which the second vertical section (FIG. 2 ) has a thickness (d2) of between 20 μm and 200 μm. Semiconductor component according to one of the preceding claims, wherein between the first contact surface ( 41 ) and the compensation metallization ( 10 ) a first connection layer ( 3 ) is arranged. Semiconductor component according to Claim 6, in which the first connection layer ( 3 ) in the vertical direction (v) has a thickness (d3) of at most 10 μm. Semiconductor component according to Claim 6 or 7, in which the compensating metallization ( 10 ) in the horizontal direction (r) farther from the first edge ( 411 ) is spaced apart as the first connection layer ( 3 ). Semiconductor component according to one of the preceding claims, wherein between the second contact surface ( 52 ) and the compensation metallization ( 10 ) a second connection layer ( 4 ) is arranged. Semiconductor component according to Claim 9, in which the second connection layer ( 4 ) is formed as a solder layer or as a sintered silver layer. Semiconductor component according to one of the preceding claims, in which the connection element ( 50 . 50a . 50b . 50c . 50d ) within the horizontal dimensions of the first contact surface ( 41 ) in the vertical direction (v) has a minimum thickness (d501) between 15 μm and 100 μm. Semiconductor component according to Claim 11, in which the minimum thickness (d501) of the connection element ( 50 . 50a . 50b . 50c . 50d ) within the horizontal dimensions of the first contact surface ( 41 ) by less than 20% of the thickness (d10) of the compensating metallisation ( 10 ) is different. Semiconductor component according to one of the preceding claims, in which the connection element ( 50 . 50a . 50b . 50c . 50d ) within the horizontal dimensions of the first contact surface ( 41 ) has a smaller minimum thickness (d501) than outside the horizontal dimension of the first contact surface ( 41 ). Semiconductor component according to one of the preceding claims, in which the connection element ( 50 . 50a . 50b . 50c . 50d ) at least in one in the horizontal direction (r) to the first contact surface ( 41 ) adjacent portion in the vertical direction (v) has a thickness (d502) between 50 μm and 500 μm. Semiconductor component according to one of the preceding claims, in which in the horizontal direction (r) outside the horizontal dimensions of the first contact surface ( 41 ) between the track ( 50 . 50a . 50b . 50c . 50d ) and the semiconductor body ( 40 ) at least in sections an insulating film ( 55 ) is arranged. Semiconductor component according to Claim 15, in which the insulating film ( 55 ) in the horizontal direction (r) across the edge of the compensating metallization ( 10 ) to the second contact surface ( 52 ). Semiconductor component according to one of the preceding claims, in which the connection element ( 50 . 50a . 50b . 50c . 50d ) is formed as a conductor and made by electroplating or by means of a cold gas spraying process. Semiconductor component according to one of the preceding claims, wherein the distance (x1) in the horizontal direction (r) of the connecting element ( 50 . 50a . 50b . 50c . 50d ) nearest vertical section ( 1 ) from the first edge ( 411 ) and the distance (x52) in the horizontal direction (r) of the second contact surface ( 52 ) by at least twice the thickness (d1) of the connecting element ( 50 . 50a . 50b . 50c . 50d ) nearest vertical section ( 1 ).

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