CN111240532A - Silver nanostructure-based optical stack and touch sensor with UV protection - Google Patents

Silver nanostructure-based optical stack and touch sensor with UV protection Download PDF

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CN111240532A
CN111240532A CN201910790975.1A CN201910790975A CN111240532A CN 111240532 A CN111240532 A CN 111240532A CN 201910790975 A CN201910790975 A CN 201910790975A CN 111240532 A CN111240532 A CN 111240532A
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保罗·曼斯基
皮埃尔-马克·阿莱曼德
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    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
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    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/96Touch switches
    • H03K17/9618Touch switches using a plurality of detectors, e.g. keyboard
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/96Touch switches
    • H03K2017/9602Touch switches characterised by the type or shape of the sensing electrodes
    • H03K2017/9604Touch switches characterised by the type or shape of the sensing electrodes characterised by the number of electrodes
    • H03K2017/9613Touch switches characterised by the type or shape of the sensing electrodes characterised by the number of electrodes using two electrodes per touch switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/94Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
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    • H03K2217/96015Constructional details for touch switches

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Abstract

本文公开了具有稳定和可靠的光学叠层的一种触摸传感器,包括第一基础透明导体,具有第一基板和第一多个联网银纳米结构;盖板;和第一光学透明胶层,设置于盖板与第一基础透明导体之间;其中盖板具有接收入射光和触摸输入的表面,以及其中第一光学透明胶层是UV阻挡层,第一光学透明胶层和第一多个联网银纳米结构不兼容,第一光学透明胶层和第一多个联网银纳米结构彼此不发生直接接触。通过在触摸传感器中加入一个或多个UV阻挡层,是的包括有基于银纳米结构的光学叠层的触摸传感器相对于长时间光晒保持稳定。

Figure 201910790975

Disclosed herein is a touch sensor with a stable and reliable optical stack, comprising a first base transparent conductor having a first substrate and a first plurality of networked silver nanostructures; a cover plate; and a first optically clear adhesive layer, disposed between the cover plate and the first base transparent conductor; wherein the cover plate has a surface for receiving incident light and touch input, and wherein the first optically clear adhesive layer is a UV blocking layer, the first optically transparent adhesive layer and the first plurality of The meshed silver nanostructures are incompatible, and the first optically transparent adhesive layer and the first plurality of meshed silver nanostructures do not come into direct contact with each other. By incorporating one or more UV blocking layers into the touch sensor, yes, touch sensors including silver nanostructure-based optical stacks remain stable against prolonged exposure to light.

Figure 201910790975

Description

具有UV防护的基于银纳米结构的光学叠层和触摸传感器Silver nanostructure-based optical stack and touch sensor with UV protection

本申请是申请日为2014年9月25日、申请号为201480065181.4、发明名称为“具有UV防护的基于银纳米结构的光学叠层和触摸传感器”的发明专利申请的分案申请。This application is a divisional application for an invention patent application with an application date of September 25, 2014, an application number of 201480065181.4, and an invention title of "Silver Nanostructure-Based Optical Laminate and Touch Sensor with UV Protection".

相关申请的交叉引用CROSS-REFERENCE TO RELATED APPLICATIONS

本申请要求享有2013年9月27日提交的美国临时专利申请号61/883,863和2014年8月15日提交的美国专利申请号14/460,999的优先权,这些申请在此被全部并入以供参考。This application claims priority to US Provisional Patent Application No. 61/883,863, filed September 27, 2013, and US Patent Application No. 14/460,999, filed August 15, 2014, which are hereby incorporated by reference in their entirety. refer to.

技术领域technical field

本公开内容涉及制造稳定和可靠的光学叠层,所述光学叠层包括至少一个银纳米结构的透明导电膜。The present disclosure is directed to fabricating stable and reliable optical stacks comprising at least one silver nanostructured transparent conductive film.

背景技术Background technique

透明导体是指在高透射率表面或者基板上涂布的薄导电膜。透明导体可以被制造为具有表面导电性,同时保持适当的光学透明性。这种表面导电的透明导体被广泛用作平面液晶显示器、触摸面板、电致发光器件和薄膜光电池中的透明电极;用作抗静电层;以及用作电磁波屏蔽层。Transparent conductors refer to thin conductive films coated on high transmittance surfaces or substrates. Transparent conductors can be fabricated with surface conductivity while maintaining appropriate optical transparency. Such surface-conductive transparent conductors are widely used as transparent electrodes in flat-panel liquid crystal displays, touch panels, electroluminescent devices, and thin-film photovoltaic cells; as antistatic layers; and as electromagnetic wave shielding layers.

目前,真空沉积的金属氧化物(比如氧化铟锡(ITO))是用于为诸如玻璃和聚合物膜之类的介电表面提供光学透明性和导电性的工业标准材料。然而,金属氧化物膜是脆弱的,易于在受到弯曲或者其他物理性应力时损坏。它们还需要高沉积温度和/或高退火温度,以实现高导电性级别。对于易于吸收湿气的某些基板,比如塑料和有机基板(例如,聚碳酸酯),难以将金属氧化物膜完全地粘附至这种基板。因此,将金属氧化物膜应用到柔性基板受到极大地限制。另外,真空沉积是一种成本很高的工艺,并且需要专用设备。此外,真空沉积的工艺对形成图案和电路没有帮助。这通常导致需要昂贵的图案化工艺,比如光刻蚀法。Currently, vacuum deposited metal oxides, such as indium tin oxide (ITO), are the industry standard materials used to provide optical transparency and conductivity to dielectric surfaces such as glass and polymer films. However, metal oxide films are fragile and easily damaged when subjected to bending or other physical stress. They also require high deposition temperatures and/or high annealing temperatures to achieve high levels of conductivity. For certain substrates that tend to absorb moisture, such as plastic and organic substrates (eg, polycarbonate), it is difficult to fully adhere metal oxide films to such substrates. Therefore, the application of metal oxide films to flexible substrates is greatly limited. Additionally, vacuum deposition is an expensive process and requires specialized equipment. In addition, the process of vacuum deposition is not helpful in forming patterns and circuits. This often results in the need for expensive patterning processes, such as photolithography.

近年来,有一种趋势是将平板显示器中的当前工业标准的透明导电ITO膜替换为嵌入绝缘基质中的由金属纳米结构(例如银纳米线)构成的复合材料。通常,通过首先在基板上涂布包含银纳米线和胶合剂的墨水组合物,来形成透明导电膜。所述胶合剂提供绝缘基质。结果得到的透明导电膜具有可比拟或者优于ITO膜的薄层电阻。In recent years, there has been a trend to replace the current industry standard transparent conductive ITO films in flat panel displays with composite materials consisting of metallic nanostructures (eg silver nanowires) embedded in insulating matrices. Typically, a transparent conductive film is formed by first coating an ink composition comprising silver nanowires and a binder on a substrate. The glue provides an insulating matrix. The resulting transparent conductive film has a sheet resistance comparable to or better than that of the ITO film.

基于纳米结构的涂布技术特别适合于印刷的电子设备。通过基于溶液的结构,印刷电子技术能够在大面积的柔性基板或者刚性基板(玻璃)上制造坚固的电子设备。参见属于凯博瑞奥斯技术公司名下的美国专利号8,049,333,该专利在此被全部并入以供参考。用于形成基于纳米结构的薄膜的基于溶液的方法,还可以与现有的涂布和层叠技术兼容。因此,额外的覆盖涂层、底涂层、粘合层的薄膜可以被整合到一个用于形成光学叠层的高生产量工艺中,所述光学叠层包括基于纳米结构的透明导体。Nanostructure-based coating techniques are particularly suitable for printed electronic devices. Through solution-based structures, printed electronics enables the fabrication of robust electronic devices on large-area flexible substrates or rigid substrates (glass). See US Pat. No. 8,049,333 in the name of Kyberios Technologies, Inc., which is hereby incorporated by reference in its entirety. Solution-based methods for forming nanostructure-based thin films are also compatible with existing coating and lamination techniques. Thus, additional films of overcoats, primers, and adhesive layers can be integrated into a high-throughput process for forming optical stacks that include nanostructure-based transparent conductors.

尽管一般来讲银被认为是贵金属,但是银在特定情况下可能容易受到腐蚀影响。银腐蚀的一个结果是局部地或者均匀地损失导电性,这表现为透明导电膜的薄层电阻漂移,从而导致不可靠的性能。因此,现有技术仍需要提供包含基于纳米结构的透明导体的可靠和稳定的光学叠层。Although generally considered a precious metal, silver may be susceptible to corrosion under certain circumstances. One result of silver corrosion is a localized or uniform loss of electrical conductivity, which manifests as a drift in sheet resistance of the transparent conductive film, resulting in unreliable performance. Accordingly, there remains a need in the art to provide reliable and stable optical stacks comprising nanostructure-based transparent conductors.

发明内容SUMMARY OF THE INVENTION

本文公开了包括基于银纳米结构的光学叠层的光学叠层,该光学叠层通过加入一个或多个UV阻挡层而相对于长时间光晒保持稳定。Disclosed herein are optical stacks comprising silver nanostructure-based optical stacks that are stabilized against prolonged exposure to light by the addition of one or more UV blocking layers.

一个实施例提供了一种触摸传感器,包括:第一基础透明导体,具有第一基板和第一多个联网银纳米结构;One embodiment provides a touch sensor comprising: a first base transparent conductor having a first substrate and a first plurality of networked silver nanostructures;

OCA层,OCA layer,

第二基础透明导体,具有第二基板和第二多个联网银纳米结构;和a second base transparent conductor having a second substrate and a second plurality of networked silver nanostructures; and

第三基板,the third substrate,

其中所述第三基板具有接收入射光和触摸输入的表面,所述第二基础透明导体比所述第一基础透明导体更靠近入射光,以及wherein the third substrate has a surface that receives incident light and touch input, the second base transparent conductor is closer to the incident light than the first base transparent conductor, and

其中所述第二基板、第三基板或者OCA层中的至少一个是UV阻挡层。wherein at least one of the second substrate, the third substrate or the OCA layer is a UV blocking layer.

一个进一步的实施例提供了一种触摸屏包括:A further embodiment provides a touch screen comprising:

第一基础透明导体,具有第一基板和在所述第一基板上形成的第一多个联网银纳米结构;a first base transparent conductor having a first substrate and a first plurality of networked silver nanostructures formed on the first substrate;

OCA层,以及OCA layer, and

第二基础透明导体,具有第二基板和在所述第二基板上形成的连续导电膜;a second base transparent conductor having a second substrate and a continuous conductive film formed on the second substrate;

其中所述第二基板具有接收入射光和触摸输入的表面,所述第二基础透明导体比所述第一基础透明导体更靠近入射光,以及wherein the second substrate has a surface that receives incident light and touch input, the second base transparent conductor is closer to the incident light than the first base transparent conductor, and

其中所述第二基板或者所述OCA层中的至少一个是UV阻挡层。wherein at least one of the second substrate or the OCA layer is a UV blocking layer.

又一个实施例提供了一种光学叠层,包括:基础透明导体,具有基板和多个联网银纳米结构;以及Yet another embodiment provides an optical stack comprising: a base transparent conductor having a substrate and a plurality of networked silver nanostructures; and

UV阻挡层。UV blocking layer.

又一个进一步的实施例提供了一种一种光学叠层,包括:基础透明导体,具有第一基板和多个联网银纳米结构;以及Yet a further embodiment provides an optical stack comprising: a base transparent conductor having a first substrate and a plurality of networked silver nanostructures; and

第二基板,覆盖所述基础透明导体,a second substrate covering the base transparent conductor,

其中所述第二基板涂布有UV阻挡涂层。wherein the second substrate is coated with a UV blocking coating.

附图说明Description of drawings

在附图中,相同的附图标记标识相似的元件或者动作。附图中的元件的尺寸和相对位置不一定是按比例绘制。例如,各个元件的形状和角度不一定是按比例绘制的,并且一些元件可以被任意地放大和放置以改善制图易读性。此外,所绘制的元件的具体形状并不意图表达出关于特定元件的实际形状的相关信息,而仅仅是为了便于识别而选择的。In the drawings, like reference numerals identify similar elements or acts. The dimensions and relative positions of elements in the figures are not necessarily drawn to scale. For example, the shapes and angles of various elements are not necessarily drawn to scale, and some elements may be arbitrarily enlarged and positioned to improve drawing legibility. Furthermore, the specific shapes of elements as drawn are not intended to convey information regarding the actual shape of a particular element, but are merely selected for ease of identification.

图1示出包括银纳米结构的基础透明导体的光学叠层。Figure 1 shows an optical stack comprising a base transparent conductor of silver nanostructures.

图2A和2B示意性地示出纳米结构腐蚀的“边缘破坏”模式。Figures 2A and 2B schematically illustrate the "edge destruction" mode of nanostructure corrosion.

图3-5示出根据本公开内容的多种实施例的加入UV阻挡层的光学叠层。3-5 illustrate optical stacks incorporating UV blocking layers according to various embodiments of the present disclosure.

图6示出通过加入UV阻挡层而有效地消除了“边缘破坏”。Figure 6 shows that "edge damage" is effectively eliminated by adding a UV blocking layer.

图7-8示出具有GFF配置的触摸传感器。7-8 illustrate a touch sensor with a GFF configuration.

图9-10示出具有反转GFF配置的触摸传感器。9-10 illustrate a touch sensor with an inverted GFF configuration.

图11-13示出根据多种实施例的额外配置的触摸传感器。11-13 illustrate additionally configured touch sensors according to various embodiments.

图14A和14B示出在光学叠层中加入UV阻挡层的实例。Figures 14A and 14B illustrate an example of adding a UV blocking layer to an optical stack.

图14C示出与层叠有UV阻挡膜的玻璃相比,玻璃的透光性。FIG. 14C shows the light transmittance of the glass compared to the glass laminated with the UV blocking film.

图14D示出在光晒下的两个光学叠层(1000和1060)的薄层电阻的时间演化。Figure 14D shows the time evolution of the sheet resistance of two optical stacks (1000 and 1060) exposed to light.

图15示出对于具有和没有UV阻挡膜的光学叠层,在高强度光下的薄层电阻变化的比较结果。Figure 15 shows a comparison of the change in sheet resistance under high intensity light for an optical stack with and without a UV blocking film.

图16示出对于具有和没有UV阻挡膜的光学叠层,在低强度光下的薄层电阻变化的比较结果。Figure 16 shows a comparison of the change in sheet resistance under low intensity light for an optical stack with and without a UV blocking film.

图17A示出某些光照条件下的光辐照光谱。Figure 17A shows the light irradiance spectrum under certain lighting conditions.

图17B示出在某些光照条件下的没有UV阻挡膜的光学叠层的薄层电阻变化。Figure 17B shows the change in sheet resistance of an optical stack without a UV blocking film under certain lighting conditions.

图18A、18B和18C示出加入UV阻挡层的多层光学叠层的实例,以及在光晒下它们的各自的薄层电阻。Figures 18A, 18B and 18C show examples of multilayer optical stacks incorporating UV blocking layers and their respective sheet resistances when exposed to light.

具体实施方式Detailed ways

透明导电膜是诸如触摸屏或者液晶显示器(LCD)之类的平板显示设备中的重要组成。这些设备的可靠性在某种程度上是通过透明导电膜的稳定性来确定的,在这些设备的正常工作条件下,透明导电膜将暴露于光和热。正如下文将更详细讨论的,人们发现长时间光晒可能导致银纳米结构的腐蚀,从而导致透明导体的薄层电阻的局部或者均匀的增加。因此,本文公开了一种包括基于银纳米结构的透明导体或者薄膜的光学叠层,所述光学叠层相对于长时间受热和光晒保持稳定,还公开了用于制备这种光学叠层的方法。Transparent conductive films are important components in flat panel display devices such as touch screens or liquid crystal displays (LCDs). The reliability of these devices is determined in part by the stability of the transparent conductive films, which will be exposed to light and heat under normal operating conditions of these devices. As will be discussed in more detail below, it has been found that prolonged exposure to light can lead to corrosion of the silver nanostructures, resulting in a localized or uniform increase in the sheet resistance of the transparent conductor. Accordingly, disclosed herein is an optical stack comprising a transparent conductor or film based on silver nanostructures that is stable against prolonged exposure to heat and light, as well as methods for making such an optical stack .

如此处使用的,“光学叠层”是指一般放置在电子设备(例如触摸传感器或者平板显示器)的光路中的多层结构或者面板。光学叠层包括基于金属纳米结构的透明导电膜(或者透明导体)的至少一个层。光学叠层的其他层例如可以包括基板、覆盖涂层、底涂层、粘合层、保护层(例如,盖板玻璃)或者其他性能增强层,比如抗反射或者防眩膜。优选的是,光学叠层包括光学透明胶(OCA)的至少一个层。As used herein, an "optical stack" refers to a multilayer structure or panel that is typically placed in the optical path of an electronic device (eg, a touch sensor or a flat panel display). The optical stack includes at least one layer of a metal nanostructure based transparent conductive film (or transparent conductor). Other layers of the optical stack may include, for example, substrates, cover coats, primer coats, adhesive layers, protective layers (eg, cover glass), or other performance enhancing layers, such as antireflective or antiglare films. Preferably, the optical stack includes at least one layer of optically clear adhesive (OCA).

光学叠层可以采用许多配置。图1示出最简单构造之一。如图所示,从下往上,光学叠层10包括第一基板12,多个联网银纳米结构14,OCA层16和第二基板18。光学叠层10可以通过如下方式形成:首先通过在第一基板12上沉积由银纳米结构、胶合剂和挥发性溶剂构成的涂层溶液,来形成基础透明导体20。在干燥和/或固化之后,银纳米结构被固定在第一基板12上。第一基板可以是柔性基板,例如聚对苯二甲酸乙二醇酯(PET)膜。The optical stack can take many configurations. Figure 1 shows one of the simplest constructions. As shown, from bottom to top, the optical stack 10 includes a first substrate 12 , a plurality of networked silver nanostructures 14 , an OCA layer 16 and a second substrate 18 . The optical stack 10 may be formed by first forming the base transparent conductor 20 by depositing a coating solution consisting of silver nanostructures, a binder, and a volatile solvent on the first substrate 12 . After drying and/or curing, the silver nanostructures are immobilized on the first substrate 12 . The first substrate may be a flexible substrate such as a polyethylene terephthalate (PET) film.

该基础透明导体可以被加入到光学叠层内的多种位置。基础透明导体20的实例可以在市场上从凯博瑞奥斯技术公司(本申请的专利受让人)获得商标名

Figure BDA0002179531910000051
第一基板12也可以是刚性材料,比如玻璃。基础透明导体20可以以中间OCA层16介于中间的方式层叠到第二基板18上。第二基板18可以是刚性的(例如玻璃)或者柔性的(例如防护膜)。这种面板例如能够用作电容型触摸面板。The base transparent conductor can be added to various locations within the optical stack. An example of a base transparent conductor 20 is commercially available under the trade name Keborios Technologies, Inc., the patent assignee of the present application
Figure BDA0002179531910000051
The first substrate 12 may also be a rigid material, such as glass. The base transparent conductor 20 may be laminated to the second substrate 18 with the intermediate OCA layer 16 interposed therebetween. The second substrate 18 may be rigid (eg glass) or flexible (eg pellicle). Such a panel can be used, for example, as a capacitive touch panel.

光氧化photooxidation

光学叠层中的银纳米结构在受到光晒时容易受到腐蚀,可归因于以复杂方式作用的多种因素。人们发现,由光导致的特定腐蚀可能在暴露于外界光或者模拟光的暗区与亮区的交界面处特别显著。图2A示意性地示出光学叠层30中的这种所谓的“边缘破坏”,该光学叠层30可以被视为用于触摸传感器的简化模型。更具体地说,光学叠层30包括用于提供基础透明导体40的第一基板32和在第一基板32上形成的多个联网银纳米结构34,以及OCA层36,OCA层36将基础透明导体40接合至第二基板38。遮光掩模42沿光学叠层30的外围放置,以仿制亮/暗交界面。在真实设备中,亮/暗交界面是通过装饰框(“deco frame”)或者边框产生的,所述装饰框架用于隐藏信号通路轨迹。作为日光或者来自日光模拟器的光的全频谱光44,被引导到光学叠层30的上表面50上。令人惊讶的是,可以看出,在与遮光部和光晒部之间的交界面或者边缘54最接近的照明区56中的纳米结构,可能发生比远离边缘54的照明区58处的纳米结构更快速的老化。这种老化表现为边缘54附近的薄层电阻的陡然增加。The silver nanostructures in optical stacks are susceptible to corrosion when exposed to light, which can be attributed to multiple factors acting in complex ways. It has been found that certain corrosion induced by light may be particularly pronounced at the interface of dark and light regions exposed to ambient or simulated light. Figure 2A schematically illustrates this so-called "edge breakage" in an optical stack 30, which can be viewed as a simplified model for a touch sensor. More specifically, the optical stack 30 includes a first substrate 32 for providing a base transparent conductor 40 and a plurality of networked silver nanostructures 34 formed on the first substrate 32, and an OCA layer 36 that provides the base transparent conductor 40. The conductors 40 are bonded to the second substrate 38 . A light-shielding mask 42 is placed along the periphery of the optical stack 30 to mimic the light/dark interface. In a real device, the light/dark interface is created by a "deco frame" or bezel, which is used to hide the signal path traces. The full spectrum light 44 , which is sunlight or light from a sunlight simulator, is directed onto the upper surface 50 of the optical stack 30 . Surprisingly, it can be seen that nanostructures in the illuminated region 56 closest to the interface between the shade and tanning or edge 54 are more likely to occur than nanostructures at the illuminated region 58 farther from the edge 54. faster aging. This aging is manifested by a sudden increase in sheet resistance near edge 54 .

图2B示出光学叠层30的俯视图。遮光掩模42阻挡光到达下方的局部纳米结构。靠近掩模42的照明区56可能比远离掩模42的区域58(例如,触摸传感器的中心)经受更多和更快速的纳米结构腐蚀。无论破坏机制如何,人们发现某些光化学活性反应通过氧化反应而导致银纳米结构的腐蚀:FIG. 2B shows a top view of the optical stack 30 . The light blocking mask 42 blocks light from reaching the underlying local nanostructures. Illuminated regions 56 near mask 42 may experience more and faster nanostructure erosion than regions 58 further away from mask 42 (eg, the center of the touch sensor). Regardless of the destruction mechanism, certain photochemically active reactions were found to lead to corrosion of silver nanostructures through oxidation reactions:

Ag0→Ag++e-Ag 0 →Ag + +e - .

已经发现,两种因素促进了银纳米线的氧化:紫外(UV)光,以及光学叠层中的氧的存在。另外,基于聚合物的基板(比如PET)在暴露于紫外光的时候也可能经受光氧化,这种光氧化消耗了工艺中的氧。光氧化速率还可能受到叠层中的其他层中的化学物质的强烈影响,特别是OCA。It has been found that two factors promote the oxidation of silver nanowires: ultraviolet (UV) light, and the presence of oxygen in the optical stack. Additionally, polymer-based substrates such as PET may also undergo photo-oxidation when exposed to UV light, which consumes oxygen in the process. The photooxidation rate can also be strongly influenced by the chemicals in other layers in the stack, especially OCA.

边缘局部破坏被认为是氧和光两者的局部级别在接近于亮/暗交界面54的区域56中比远离区域58中更高而导致的。更具体地说,在照明区中,因为PET膜基板也经受光氧化,所以由于PET基板的竞争性氧消耗而导致银纳米线被夺去氧。然而,氧可能通过(掩模下方的)暗区中的PET而扩散,然后通过OCA而横向地扩散并进入照明区中,氧在该照明区中被光氧化反应消耗。因此,亮/暗交界面是光学叠层中的暴露于高级别的氧和光的仅有部分。Edge localized damage is believed to result from higher local levels of both oxygen and light in regions 56 near the light/dark interface 54 than in regions 58 further away. More specifically, in the illuminated region, silver nanowires are deprived of oxygen due to the competing oxygen consumption of the PET substrate because the PET film substrate is also subjected to photo-oxidation. However, oxygen may diffuse through the PET in the dark area (under the mask), then diffuse laterally through the OCA and into the illuminated area where it is consumed by photo-oxidation reactions. Therefore, the light/dark interface is the only part of the optical stack that is exposed to high levels of oxygen and light.

还发现,在一些情况下,非常靠近OCA看起来会导致和加剧银纳米结构的腐蚀。光学透明胶(OCA)是经常用于将几个功能层(例如盖板玻璃和透明导体)组装或者接合为一个光学叠层或者面板(参见图1)的薄粘性膜。OCA经常包含通过自由基聚合形成的烷基丙烯酸酯的混合物。结果,OCA可能包含未反应的引发剂或者光引发剂、残余单体、溶剂和自由基。一些化学物种是光敏性的,可能对于非常靠近OCA的银纳米结构有害。来自OCA的化学物质还可能通过参与初始光氧化步骤的氧化还原反应下游阶段而促进光氧化反应。如此处使用的,OCA可以是预先制造(包括商品形式)并层叠到基板上,或者是以液体形式直接涂布到基板上。It has also been found that, in some cases, very close proximity to the OCA appears to cause and exacerbate corrosion of the silver nanostructures. Optically Clear Adhesives (OCA) are thin adhesive films often used to assemble or join several functional layers (eg, cover glass and transparent conductors) into an optical stack or panel (see Figure 1). OCAs often contain mixtures of alkyl acrylates formed by free radical polymerization. As a result, OCA may contain unreacted initiator or photoinitiator, residual monomers, solvent and free radicals. Some chemical species are photosensitizing and may be detrimental to silver nanostructures very close to the OCA. Chemicals from OCA may also contribute to the photo-oxidation reaction by participating in the downstream stages of the redox reaction of the initial photo-oxidation step. As used herein, OCA can be pre-manufactured (including commercial form) and laminated to a substrate, or applied directly to a substrate in liquid form.

光敏性化学物种易于吸收光子,并且经受或者导致复杂的光化学活性反应。一种光化学活性反应包括将化合物从基态激励到更高能量级,即激发态。激发态是瞬态的,并且一般随着热量释放而衰变回到基态。然而,这种瞬态的激发态也可能导致与其他化学物种的复杂、级联的反应。Photosensitive chemical species readily absorb photons and undergo or cause complex photochemically active reactions. A photochemically active reaction involves exciting a compound from a ground state to a higher energy level, an excited state. Excited states are transient and generally decay back to the ground state as heat is released. However, such transient excited states can also lead to complex, cascaded reactions with other chemical species.

加入UV阻挡层Add UV blocking layer

加入UV阻挡层的光学叠层能够阻挡或者减弱紫外光与银纳米结构相互反应。UV阻挡层可以被加入到光学叠层中的任何位置,只要它被放置在光源和纳米结构之间。Optical stacks incorporating UV blocking layers can block or attenuate the interaction of UV light with silver nanostructures. The UV blocking layer can be added anywhere in the optical stack as long as it is placed between the light source and the nanostructure.

UV阻挡层包括吸收UV区域(通常被定义为390nm以下的光)中的光子的一个或多个UV阻挡物质,由此阻挡或者显著地减弱入射光中的紫外光,这种紫外光原本有可能进入光学叠层并且使银纳米结构老化。UV阻挡物质通常是具有不饱和化学键的化合物。一般来讲,当UV阻挡物质吸收光子时,产生电子激发态。该激发态通过能量迁移或者电子迁移而返回到基态,由此散逸光子能量。The UV blocking layer includes one or more UV blocking substances that absorb photons in the UV region (generally defined as light below 390 nm), thereby blocking or significantly attenuating ultraviolet light in incident light that would otherwise be possible Enter the optical stack and age the silver nanostructures. UV blocking substances are generally compounds with unsaturated chemical bonds. Generally speaking, when a UV blocking substance absorbs a photon, an electronic excited state is created. The excited state returns to the ground state by energy transfer or electron transfer, thereby dissipating photon energy.

在某些实施例中,UV阻挡层可以是涂有UV阻挡物质薄层的此处所述的任何基板。在其他实施例中,UV阻挡层可以在该层的本体内加入一种或多种UV阻挡物质。在进一步的实施例中,UV阻挡层可以有利地用作OCA层,特别是在UV阻挡层是光学叠层内的中间层的配置中。在这种情形下,UV阻挡OCA层用于阻挡紫外光以及接合光学叠层的两个子部分的双重用途。In certain embodiments, the UV blocking layer can be any of the substrates described herein coated with a thin layer of a UV blocking substance. In other embodiments, the UV blocking layer may incorporate one or more UV blocking substances within the bulk of the layer. In further embodiments, the UV blocking layer may be advantageously used as the OCA layer, especially in configurations where the UV blocking layer is an intermediate layer within the optical stack. In this case, the UV blocking OCA layer serves the dual purpose of blocking UV light and joining the two sub-portions of the optical stack.

图3示出加入UV阻挡OCA层的光学叠层100。如图所示,光学叠层100包括用于提供基础透明导体120的第一基板112和在第一基板112上形成的多个联网银纳米结构114,UV阻挡OCA层116,以及第二基板118。可以选择性地在入射光透过的表面124的外围处设置装饰框或者遮光掩模122。这种配置实质上是将图2的光学叠层30的OCA层替换为UV阻挡OCA层116。因为UV阻挡OCA层接触纳米结构114,所以重要的是UV阻挡OCA应兼容纳米结构,并且不会成为不稳定源。Figure 3 shows an optical stack 100 incorporating a UV blocking OCA layer. As shown, the optical stack 100 includes a first substrate 112 for providing a base transparent conductor 120 and a plurality of networked silver nanostructures 114 formed on the first substrate 112, a UV blocking OCA layer 116, and a second substrate 118 . A decorative frame or light-shielding mask 122 may optionally be provided at the periphery of the incident light-transmitting surface 124 . This configuration essentially replaces the OCA layer of the optical stack 30 of FIG. 2 with the UV blocking OCA layer 116 . Because the UV blocking OCA layer contacts the nanostructures 114, it is important that the UV blocking OCA is compatible with the nanostructures and does not become a source of instability.

图4示出能够通过将光学叠层中的基础透明导体的方位相对于入射光反转,来解决UV阻挡层和银纳米结构之间的潜在不兼容性的另一实施例。如图所示,从下往上,光学叠层150包括第一基板152,第一OCA层154,包括第二基板158和多个联网银纳米结构160的基础透明导体156,第二OCA层166,和第三基板168,其中第二OCA层166是UV阻挡层,银纳米结构160不与第二OCA层接触。可以选择性地在入射光透过的表面174的外围处设置装饰框或者遮光带172。在这种配置中,因为与图3中的基础透明导体120相比,基础透明导体156是反转的,所以银纳米结构不再与UV阻挡OCA层166直接接触,由此避免了UV阻挡物质和银纳米结构之间的任何潜在不兼容性。第一OCA层154无需UV阻挡层。Figure 4 illustrates another embodiment that can address the potential incompatibility between the UV blocking layer and the silver nanostructures by reversing the orientation of the underlying transparent conductor in the optical stack with respect to the incident light. As shown, from bottom to top, the optical stack 150 includes a first substrate 152, a first OCA layer 154, a base transparent conductor 156 including a second substrate 158 and a plurality of networked silver nanostructures 160, a second OCA layer 166 , and a third substrate 168, wherein the second OCA layer 166 is a UV blocking layer, and the silver nanostructures 160 are not in contact with the second OCA layer. A decorative frame or light shielding tape 172 may optionally be provided at the periphery of the surface 174 through which incident light is transmitted. In this configuration, because the base transparent conductor 156 is inverted compared to the base transparent conductor 120 in FIG. 3, the silver nanostructures are no longer in direct contact with the UV blocking OCA layer 166, thereby avoiding UV blocking species and any potential incompatibilities between silver nanostructures. The first OCA layer 154 does not require a UV blocking layer.

图5示出根据本公开内容的另一实施例的源于图4的变型配置。如图所示,从下往上,光学叠层200包括具有第一基板212和多个联网银纳米结构214的基础透明导体210,OCA层216,第二基板218,和UV阻挡层220。UV阻挡层可以选择性地通过位于入射光表面224的外围中的装饰框或者遮光掩模222来覆盖。在图5中,银纳米结构不与UV阻挡层接触,由此避免任何潜在不兼容性。FIG. 5 shows a variant configuration derived from FIG. 4 according to another embodiment of the present disclosure. As shown, from bottom to top, the optical stack 200 includes a base transparent conductor 210 having a first substrate 212 and a plurality of networked silver nanostructures 214 , an OCA layer 216 , a second substrate 218 , and a UV blocking layer 220 . The UV blocking layer may optionally be covered by a decorative frame or light-shielding mask 222 in the periphery of the incident light surface 224 . In Figure 5, the silver nanostructures are not in contact with the UV blocking layer, thereby avoiding any potential incompatibilities.

图6示出通过将光学叠层30和光学叠层200暴露于模拟光条件而得到的UV阻挡层的效果,如此处所述的以及下文将对应于没有UV阻挡层的光学叠层30的实例3-4面板(A)中进一步详述的。对于超过100小时的光晒,在边缘区域56中,如通过光学叠层的薄层电阻的明显陡然增加(通过无接触涡流方法测量)所表示的,显示出显著的“边缘破坏”,而在远离边缘54的亮区58中,光学叠层的薄层电阻相对稳定。与此不同,加入了UV阻挡层220的光学叠层在超过600小时的光晒下,对于全部光学叠层显示出相同的稳定性。如所演示的,UV阻挡层在防止局部光老化方面是有效的。FIG. 6 shows the effect of UV blocking layers obtained by exposing optical stack 30 and optical stack 200 to simulated light conditions, as described herein and below will correspond to an example of optical stack 30 without a UV blocking layer further detailed in panels 3-4 (A). For more than 100 hours of light exposure, significant "edge damage" was exhibited in the edge region 56, as indicated by the apparent abrupt increase in the sheet resistance of the optical stack (measured by the non-contact eddy current method), while in the edge region 56 In bright regions 58 away from edge 54, the sheet resistance of the optical stack is relatively stable. In contrast, the optical stack to which UV blocking layer 220 was added showed the same stability for all optical stacks over 600 hours of light exposure. As demonstrated, the UV blocking layer is effective in preventing localized photoaging.

测试光稳定性Test Light Stability

为了测试光学叠层的光稳定性,以时间函数的方式测量光晒下的光学叠层的薄层电阻,以检测任何漂移。To test the photostability of the optical stack, the sheet resistance of the optical stack exposed to light was measured as a function of time to detect any drift.

外界环境室被用作提供光学叠层在其中工作的模拟光和外界条件的试验设备。通常,氙弧灯(例如Atlas XXL+)可以用作日光模拟器。氙弧灯提供与日光非常匹配的全频谱光。可以调节光的强度以模拟不同白天时间或者季节的直射日光或者间接漫射日光。另外,可以调节环境室的温度(包括室温度和黑板温度)、相对湿度等等。The ambient chamber is used as a test facility to provide simulated light and ambient conditions in which the optical stack operates. Typically, xenon arc lamps (eg Atlas XXL+) can be used as daylight simulators. Xenon arc lamps provide full spectrum light that is well matched to sunlight. The intensity of the light can be adjusted to simulate direct sunlight or indirect diffuse sunlight for different time of day or seasons. In addition, the temperature of the environmental chamber (including room temperature and blackboard temperature), relative humidity, and the like can be adjusted.

触摸传感器touch sensor

此处所述的UV防护光学叠层可以进一步与其他功能膜集成以形成触摸传感器。The UV protective optical stacks described herein can be further integrated with other functional films to form touch sensors.

无论触摸传感器是电容型还是电阻型,都在触摸表面下方采用一个或两个透明导电膜来承载电流。所述透明导电膜被图案化为导电线,以检测触摸输入位置的坐标。当触摸该触摸表面时,(在电阻型触摸传感器中)检测到在该触摸输入位置处的电压的小变化。Whether the touch sensor is capacitive or resistive, one or two transparent conductive films are used under the touch surface to carry the current. The transparent conductive film is patterned into conductive lines to detect the coordinates of the touch input position. When the touch surface is touched, a small change in voltage at the location of the touch input is detected (in resistive touch sensors).

可使用许多配置来构造触摸传感器。通常,触摸传感器可以按照支撑各种功能层的不同基板来分类,比如基于玻璃的基板或者基于膜的基板。早期的触摸传感器体系结构通常采用GG配置,即玻璃-玻璃结构,每个玻璃基板支撑相应的透明导电膜(例如,ITO层)。随着基于薄膜的透明导体(比如由凯博瑞奥斯技术公司提供的

Figure BDA0002179531910000091
膜)的出现,GFF(玻璃-膜-膜)和G1F(玻璃-膜)配置都是可行的。其他的配置还包括例如由Shoei Co.有限公司提供的P1F(塑料-膜)和由UniDisplay公司提供的OFS(单薄膜方案)。Touch sensors can be constructed using many configurations. Generally, touch sensors can be categorized by different substrates supporting various functional layers, such as glass-based substrates or film-based substrates. Early touch sensor architectures typically employed a GG configuration, a glass-to-glass structure, with each glass substrate supporting a corresponding transparent conductive film (eg, an ITO layer). With thin film-based transparent conductors such as those offered by Cabrios Technologies
Figure BDA0002179531910000091
membrane), GFF (glass-membrane-membrane) and G1F (glass-membrane) configurations are both feasible. Other configurations include, for example, P1F (Plastic-Film) offered by Shoei Co. Ltd. and OFS (Single Film Scheme) offered by UniDisplay Corporation.

无论哪种配置,至少一个层(例如基板、覆盖层或者OCA层)应当是位于入射光和银纳米结构之间的UV阻挡层。当存在两个银纳米结构层时,该UV阻挡层应当在入射光和更靠近入射光的银纳米结构层之间,例如在入射光和此处说明的第二基础透明导体层之间。Regardless of the configuration, at least one layer (eg, substrate, capping layer, or OCA layer) should be a UV blocking layer between the incident light and the silver nanostructures. When two silver nanostructured layers are present, the UV blocking layer should be between the incident light and the silver nanostructured layer closer to the incident light, eg, between the incident light and the second base transparent conductor layer described herein.

多种实施例涉及通过加入一个或多个UV阻挡层而实现的触摸传感器体系结构,这种触摸传感器体系结构提供光稳定性并且保护银纳米结构免于光老化。应当被理解的是:此处讨论的全部配置都可以进一步包括如共同未决美国专利申请号14/181,523中描述的一种或多种抗氧化剂和/或一个或多个氧屏障层,该申请在此被全部并入。Various embodiments relate to touch sensor architectures implemented by adding one or more UV blocking layers that provide photostability and protect silver nanostructures from photoaging. It should be understood that all configurations discussed herein may further include one or more antioxidants and/or one or more oxygen barrier layers as described in co-pending US Patent Application No. 14/181,523, which It is hereby incorporated in its entirety.

图7示出根据一个实施例的示例性的GFF(玻璃-膜-膜)配置。如图所示,从下往上,触摸传感器300包括第一基础透明导体310,第一基础透明导体310具有第一基板312和在第一基板312上形成的第一多个联网银纳米结构314。第一基础透明导体310以OCA层318介于中间的方式接合至第二基础透明导体316,第二基础透明导体316具有第二基板322和在第二基板322上形成的第二多个联网银纳米结构324。第一和第二基础透明导体的每一个可以是

Figure BDA0002179531910000092
膜。第二基础透明导体316进一步以UV阻挡OCA层326介于中间的方式接合至第三基板328。第三基板可以是接收入射光和触摸输入的盖板玻璃。可以在盖板玻璃328的下方加入可选的装饰框330。UV阻挡OCA层326有效地阻挡入射光中的紫外光越过盖板玻璃而进入光学叠层。FIG. 7 shows an exemplary GFF (glass-film-film) configuration according to one embodiment. As shown, from bottom to top, the touch sensor 300 includes a first base transparent conductor 310 having a first substrate 312 and a first plurality of networked silver nanostructures 314 formed on the first substrate 312 . The first base transparent conductor 310 is bonded with the OCA layer 318 interposed to a second base transparent conductor 316 having a second substrate 322 and a second plurality of interconnected silvers formed on the second substrate 322 Nanostructures 324. Each of the first and second base transparent conductors may be
Figure BDA0002179531910000092
membrane. The second base transparent conductor 316 is further bonded to the third substrate 328 with the UV blocking OCA layer 326 interposed. The third substrate may be a cover glass that receives incident light and touch input. An optional decorative frame 330 may be added below the cover glass 328 . The UV blocking OCA layer 326 effectively blocks ultraviolet light in incident light from passing through the cover glass and into the optical stack.

图8示出根据另一个实施例的GFF/PFF(塑料-膜-膜)配置。如图所示,从下往上,触摸传感器400包括第一基础透明导体410,第一基础透明导体410具有第一基板412和在第一基板412上形成的第一多个联网银纳米结构414。第一基础透明导体410以OCA层418介于中间的方式接合至第二基础透明导体416,第二基础透明导体416具有第二基板422和在第二基板422上形成的第二多个联网银纳米结构424。第一和第二基础透明导体的每一个可以是

Figure BDA0002179531910000093
膜。第二基础透明导体416进一步以OCA层426介于中间的方式接合至第三基板428,第三基板428是UV阻挡盖板镜片(塑料或者镀膜玻璃)。可以在UV阻挡盖板镜片428的下方加入可选的装饰框430。UV阻挡盖板镜片428有效地阻挡入射光中的紫外光进入触摸传感器。Figure 8 shows a GFF/PFF (plastic-film-film) configuration according to another embodiment. As shown, from bottom to top, touch sensor 400 includes a first base transparent conductor 410 having a first substrate 412 and a first plurality of networked silver nanostructures 414 formed on the first substrate 412 . The first base transparent conductor 410 is bonded with the OCA layer 418 interposed to a second base transparent conductor 416 having a second substrate 422 and a second plurality of interconnected silvers formed on the second substrate 422 Nanostructures 424. Each of the first and second base transparent conductors may be
Figure BDA0002179531910000093
membrane. The second base transparent conductor 416 is further bonded to a third substrate 428, which is a UV blocking cover lens (plastic or coated glass), with the OCA layer 426 in between. An optional decorative frame 430 may be added below the UV blocking cover lens 428 . The UV blocking cover lens 428 effectively blocks ultraviolet light in the incident light from entering the touch sensor.

图9示出另一GFF配置中的触摸传感器,其中与图7中相比,基础透明导体被反转。如图所示,从下往上,触摸传感器500包括覆盖膜/显示层510,覆盖膜/显示层510以第一OCA层512介于中间的方式接合至第一基础透明导体520,第一基础透明导体层520具有第一基板522和在第一基板522上形成的第一多个联网银纳米结构524。与图7的第一基础透明导体310相比,第一基础透明导体520被反转,以使得第一基板522比纳米结构524更靠近入射光。第一基础透明导体520以OCA层526介于中间的方式接合至第二基础透明导体530,第二基础透明导体530具有第二基板532和在第二基板532上形成的第二多个联网银纳米结构534。第一和第二基础透明导体的每一个可以是

Figure BDA0002179531910000101
膜。第二基础透明导体530进一步以UV阻挡OCA层536介于中间的方式接合至第三基板538。第三基板538可以是接收入射光和触摸输入的盖板玻璃。可以在盖板玻璃538的下方加入可选的装饰框540。UV阻挡OCA层536有效地阻挡入射光中的紫外光越过盖板玻璃而进入光学叠层。另外,因为第二基础透明导体被反转以使得第二基板532比第二多个纳米结构534更靠近入射光,所以纳米结构534不直接接触UV阻挡OCA层536。因而,纳米结构和UV阻挡OCA层之间的任何潜在不兼容性不会导致触摸传感器不稳定。FIG. 9 shows a touch sensor in another GFF configuration in which the underlying transparent conductor is reversed compared to that in FIG. 7 . As shown, from bottom to top, the touch sensor 500 includes a cover film/display layer 510 bonded to a first base transparent conductor 520 with a first OCA layer 512 in between, the first base The transparent conductor layer 520 has a first substrate 522 and a first plurality of networked silver nanostructures 524 formed on the first substrate 522 . Compared to the first base transparent conductor 310 of FIG. 7 , the first base transparent conductor 520 is inverted so that the first substrate 522 is closer to the incident light than the nanostructures 524 . The first base transparent conductor 520 is bonded with the OCA layer 526 interposed to a second base transparent conductor 530 having a second substrate 532 and a second plurality of interconnected silvers formed on the second substrate 532 Nanostructures 534. Each of the first and second base transparent conductors may be
Figure BDA0002179531910000101
membrane. The second base transparent conductor 530 is further bonded to the third substrate 538 with the UV blocking OCA layer 536 interposed. The third substrate 538 may be a cover glass that receives incident light and touch input. An optional trim frame 540 may be added below the cover glass 538 . UV blocking OCA layer 536 effectively blocks ultraviolet light in incident light from passing through the cover glass and into the optical stack. Additionally, because the second base transparent conductor is inverted so that the second substrate 532 is closer to the incident light than the second plurality of nanostructures 534 , the nanostructures 534 do not directly contact the UV blocking OCA layer 536 . Thus, any potential incompatibility between the nanostructures and the UV blocking OCA layer will not lead to instability of the touch sensor.

图10示出另一GFF配置中的触摸传感器,其中基础透明导体被反转。除了第二基础透明导体630具有UV阻挡基板之外,触摸传感器600类似于图9中的触摸传感器500。更具体地说,从下往上,触摸传感器600包括覆盖膜/显示层610,覆盖膜/显示层610以第一OCA层612介于中间的方式接合至第一基础透明导体层620,第一基础透明导体层620具有第一基板622和在第一基板622上形成的第一多个联网银纳米结构624,第一基板622比纳米结构624更靠近入射光。第一基础透明导体620以OCA层626介于中间的方式接合至第二基础透明导体630,第二基础透明导体630具有第二UV阻挡基板632和在第二UV阻挡基板632上形成的第二多个联网银纳米结构634。第一和第二基础透明导体的每一个可以是

Figure BDA0002179531910000102
膜。UV阻挡基板632可以是涂有一种或多种UV阻挡物质的任何基板。第二基础透明导体630进一步以UV阻挡OCA层636介于中间的方式接合至第三基板638。可以在盖板玻璃638的下方加入可选的装饰框640。在这种配置中,第二基础透明导体630的反转结构使得位于入射光和纳米结构634之间的UV阻挡基板632能够阻挡紫外光与纳米结构相互作用。Figure 10 shows a touch sensor in another GFF configuration in which the underlying transparent conductor is inverted. The touch sensor 600 is similar to the touch sensor 500 in FIG. 9 except that the second base transparent conductor 630 has a UV blocking substrate. More specifically, from bottom to top, touch sensor 600 includes cover film/display layer 610 bonded to first base transparent conductor layer 620 with first OCA layer 612 interposed, first The base transparent conductor layer 620 has a first substrate 622 and a first plurality of networked silver nanostructures 624 formed on the first substrate 622 , the first substrate 622 being closer to the incident light than the nanostructures 624 . The first base transparent conductor 620 is bonded to the second base transparent conductor 630 with the OCA layer 626 interposed, and the second base transparent conductor 630 has a second UV blocking substrate 632 and a second base transparent conductor 632 formed on the second UV blocking substrate 632. A plurality of networked silver nanostructures 634. Each of the first and second base transparent conductors may be
Figure BDA0002179531910000102
membrane. UV blocking substrate 632 may be any substrate coated with one or more UV blocking substances. The second base transparent conductor 630 is further bonded to the third substrate 638 with the UV blocking OCA layer 636 interposed. An optional trim frame 640 may be added below the cover glass 638 . In this configuration, the inverted structure of the second base transparent conductor 630 enables the UV blocking substrate 632 located between the incident light and the nanostructures 634 to block UV light from interacting with the nanostructures.

图11示出具有G1F配置的触摸传感器。从下往上,触摸传感器700包括第一基础透明导体层710,第一基础透明导体层710具有第一基板712和在第一基板712上形成的第一多个联网银纳米结构714。第一基础透明导体层710可以是

Figure BDA0002179531910000111
膜。第一基础透明导体层710以UV阻挡OCA层720介于中间的方式接合至基于玻璃的透明导体730,所述基于玻璃的透明导体730具有玻璃基板732和在玻璃基板732上形成的连续导电膜734,所述连续导电膜734例如是一层ITO膜,所述ITO膜接触UV阻挡OCA层720。可以在盖板玻璃732的下方加入可选的装饰框740。Figure 11 shows a touch sensor with a G1F configuration. From bottom to top, the touch sensor 700 includes a first base transparent conductor layer 710 having a first substrate 712 and a first plurality of networked silver nanostructures 714 formed on the first substrate 712 . The first base transparent conductor layer 710 may be
Figure BDA0002179531910000111
membrane. The first base transparent conductor layer 710 is bonded with the UV blocking OCA layer 720 interposed to the glass-based transparent conductor 730 having a glass substrate 732 and a continuous conductive film formed on the glass substrate 732 734 , the continuous conductive film 734 is, for example, an ITO film, and the ITO film contacts the UV blocking OCA layer 720 . An optional decorative frame 740 may be added below the cover glass 732 .

图12示出具有P1F配置的触摸传感器,该触摸传感器采用了UV阻挡塑料盖板镜片。更具体地说,从下往上,触摸传感器800包括第一基础透明导体层810,第一基础透明导体层810具有第一基板812和在第一基板812上形成的第一多个联网银纳米结构814。第一基础透明导体层810可以是

Figure BDA0002179531910000112
膜。所述第一基础透明导体层810以OCA层820介于中间的方式接合至第二基础透明导体830,第二基础透明导体830具有第二UV阻挡基板832和在第二UV阻挡基板832上形成的第二多个联网银纳米结构834。第二多个联网银纳米结构834接触OCA层820。第二UV阻挡基板832可以是接收入射光和触摸输入的塑料盖板镜片。可以在盖板镜片832的下方加入可选的装饰框840。Figure 12 shows a touch sensor with a P1F configuration employing a UV blocking plastic cover lens. More specifically, from bottom to top, the touch sensor 800 includes a first base transparent conductor layer 810 having a first substrate 812 and a first plurality of networked silver nanometers formed on the first substrate 812 Structure 814. The first base transparent conductor layer 810 may be
Figure BDA0002179531910000112
membrane. The first base transparent conductor layer 810 is bonded to the second base transparent conductor 830 with the OCA layer 820 interposed therebetween, and the second base transparent conductor 830 has a second UV blocking substrate 832 and is formed on the second UV blocking substrate 832 834 of the second plurality of networked silver nanostructures. The second plurality of networked silver nanostructures 834 contacts the OCA layer 820 . The second UV blocking substrate 832 may be a plastic cover lens that receives incident light and touch input. An optional decorative frame 840 may be added below the cover lens 832.

图13示出具有OFS配置的触摸传感器,该触摸传感器采用单薄膜解决方案,以制造彼此直接接合的两个基础透明导体,而不设置中间的OCA层。从下往上,触摸传感器900包括第一基础透明导体层910,第一基础透明导体层910具有第一基板912和在第一基板912上形成的第一多个联网银纳米结构914。第一基础透明导体层910可以是

Figure BDA0002179531910000113
膜。第一基础透明导体层910直接接合至第二基础透明导体920,第二基础透明导体920具有第二基板922和在第二基板922上形成的第二多个纳米结构924。第二基板922用作直接接合至第一多个纳米结构914的OCA层。适当的材料包括由日立公司提供的TCTF(可转印透明导电膜),其中第二基板由透明的可光致固化的转印膜构成,这种转印膜可通过层叠工艺应用至第一基础透明导体。第二基础透明导体920进一步以UV阻挡OCA层930介于中间的方式接合至第三基板932,例如盖板玻璃。可以在盖板镜片932的下方加入可选的装饰框940。Figure 13 shows a touch sensor with an OFS configuration employing a single film solution to fabricate two base transparent conductors directly bonded to each other without an intervening OCA layer. From bottom to top, the touch sensor 900 includes a first base transparent conductor layer 910 having a first substrate 912 and a first plurality of networked silver nanostructures 914 formed on the first substrate 912 . The first base transparent conductor layer 910 may be
Figure BDA0002179531910000113
membrane. The first base transparent conductor layer 910 is directly bonded to a second base transparent conductor 920 having a second substrate 922 and a second plurality of nanostructures 924 formed on the second substrate 922 . The second substrate 922 serves as the OCA layer directly bonded to the first plurality of nanostructures 914 . Suitable materials include TCTF (Transparent Conductive Transfer Film) supplied by Hitachi, where the second substrate consists of a transparent photocurable transfer film that can be applied to the first base by a lamination process transparent conductor. The second base transparent conductor 920 is further bonded to a third substrate 932, such as a cover glass, with the UV blocking OCA layer 930 interposed. An optional decorative frame 940 may be added below the cover lens 932.

下面将进一步更详细讨论本公开内容的某些其他特征。Certain other features of the present disclosure are discussed in greater detail further below.

银纳米结构silver nanostructures

如此处使用的,“银纳米结构”泛指电性导电的纳米尺寸结构,其中至少一个维度(即,宽度或者直径)小于500nm;更典型地,小于100nm或者50nm。在多种实施例中,纳米结构的宽度或者直径在10至40nm、20至40nm、5至20nm、10至30nm、40至60nm、或者50至70nm的范围内。As used herein, "silver nanostructures" generally refer to electrically conductive nanoscale structures, wherein at least one dimension (ie, width or diameter) is less than 500 nm; more typically, less than 100 nm or 50 nm. In various embodiments, the nanostructures have widths or diameters in the range of 10 to 40 nm, 20 to 40 nm, 5 to 20 nm, 10 to 30 nm, 40 to 60 nm, or 50 to 70 nm.

纳米结构可以具有任何形状或者几何结构。用于定义给定纳米结构的几何结构的一种方式是通过它的“长宽比”,长宽比是指纳米结构的长度和宽度(或者直径)的比率。在某些实施例中,纳米结构是各向同性形状(即,长宽比=1)。典型的各向同性或者基本上各向同性的纳米结构包括纳米粒子。在优选实施例中,纳米结构是各向异性形状(即,长宽比≠1)。各向异性的纳米结构典型地具有沿其长度的纵长轴。示例性的各向异性的纳米结构包括纳米线(长宽比至少为10的固体纳米结构,更典型地,长宽比至少为50),纳米棒(长宽比小于10的固体纳米结构),以及纳米管(中空的纳米结构)。Nanostructures can have any shape or geometry. One way to define the geometry of a given nanostructure is by its "aspect ratio," which refers to the ratio of the nanostructure's length and width (or diameter). In certain embodiments, the nanostructures are isotropically shaped (ie, aspect ratio=1). Typical isotropic or substantially isotropic nanostructures include nanoparticles. In a preferred embodiment, the nanostructures are anisotropically shaped (ie, aspect ratio ≠ 1). Anisotropic nanostructures typically have a longitudinal axis along their length. Exemplary anisotropic nanostructures include nanowires (solid nanostructures with an aspect ratio of at least 10, more typically, an aspect ratio of at least 50), nanorods (solid nanostructures with an aspect ratio of less than 10), and nanotubes (hollow nanostructures).

纵向的各向异性的纳米结构(例如纳米线)的长度大于500nm,或者大于1μm,或者大于10μm。在多种实施例中,所述纳米结构的长度在5至30μm的范围内,或者在15至50μm、25至75μm、30至60μm、40至80μm或者50至100μm的范围内。The lengths of longitudinally anisotropic nanostructures (eg nanowires) are greater than 500 nm, or greater than 1 μm, or greater than 10 μm. In various embodiments, the nanostructures have lengths in the range of 5 to 30 μm, alternatively in the range of 15 to 50 μm, 25 to 75 μm, 30 to 60 μm, 40 to 80 μm, or 50 to 100 μm.

典型地,银纳米结构具有在10至100,000范围内的长宽比。较大的长宽比对于获得透明导体层来说是有利的,因为它们能够使线的整体密度更低以获得高透明性,同时能够形成更高效的导电网络。换言之,当使用了具有高长宽比的导电性纳米线时,实现导电网络的纳米线的密度可以低到足以使所述导电网络基本上是透明的。Typically, silver nanostructures have an aspect ratio in the range of 10 to 100,000. Larger aspect ratios are advantageous for obtaining transparent conductor layers because they enable lower overall wire density for high transparency while enabling the formation of more efficient conductive networks. In other words, when conductive nanowires with high aspect ratios are used, the density of nanowires implementing the conductive network can be low enough to make the conductive network substantially transparent.

银纳米线可以通过现有技术中的已知方法来制备。特别是,可以通过在存在多元醇(例如乙二醇)和聚乙烯吡咯烷酮的情况下对银盐(例如硝酸银)进行液相还原,来合成银纳米线。具有均匀尺寸的银纳米线的大规模生产,可以根据全部属于本公开内容的受让人凯博瑞奥斯技术公司名下的美国公布申请号2008/0210052、2011/0024159、2011/0045272和2011/0048170中描述的方法来制备和精炼。Silver nanowires can be prepared by methods known in the art. In particular, silver nanowires can be synthesized by liquid phase reduction of silver salts such as silver nitrate in the presence of polyols such as ethylene glycol and polyvinylpyrrolidone. Large-scale production of silver nanowires of uniform size can be accomplished according to U.S. Published Application Nos. 2008/0210052, 2011/0024159, 2011/0045272, and 2011, all in the name of Kyberios Technologies, Inc., the assignee of the present disclosure /0048170 to prepare and refine.

纳米结构层nanostructured layer

纳米结构层是提供透明导体的电性导电介质的联网金属纳米结构(例如,银纳米线)的导电网络。由于导电性是通过从一种金属纳米结构渗滤到另一种纳米结构的电荷实现的,所以必须在导电网络中存在足够的金属纳米线以达到电渗滤阈值,并成为导电的。导电网络的表面导电性与它的表面电阻率成反比,所述表面电阻率有时称为薄层电阻,可以通过现有技术中的已知方法来测量。如此处使用的,“电性导电的”或者简称为“导电的”对应于不大于104Ω/的表面电阻率,或者更典型地不超过1,000Ω/D,或者更典型地不超过500Ω/□,或者更典型地不超过200Ω/□。表面电阻率取决于诸如联网金属纳米结构的长宽比、对齐度(degree of alignment)、团聚度(degree of agglomeration)、以及电阻率之类的因素。The nanostructure layer is a conductive network of networked metal nanostructures (eg, silver nanowires) that provide an electrically conductive medium for transparent conductors. Since conductivity is achieved by charge percolating from one metal nanostructure to another, enough metal nanowires must be present in the conducting network to reach the electropercolation threshold and become conductive. The surface conductivity of a conductive network is inversely proportional to its surface resistivity, sometimes referred to as sheet resistance, and can be measured by methods known in the art. As used herein, "electrically conductive" or simply "conductive" corresponds to a surface resistivity of no greater than 10 4 Ω/D, or more typically no greater than 1,000 Ω/D, or more typically no greater than 500 Ω/D □, or more typically no more than 200Ω/□. Surface resistivity depends on factors such as the aspect ratio, degree of alignment, degree of agglomeration, and resistivity of the networked metal nanostructures.

在某些实施例中,金属纳米结构可以在不使用胶合剂的情况下,在基板上形成导电网络。在其他实施例中,可以提供胶合剂,以促进将纳米结构粘合至基板。适当的胶合剂包括光学透明聚合物,所述光学透明聚合物包括但不限于:诸如聚甲基丙烯酸酯之类的聚丙烯酸化物(例如,聚(甲基丙烯酸甲酯)),聚丙烯酸酯和聚丙烯腈,聚乙烯醇,聚酯(例如,聚对苯二甲酸乙二醇酯(PET),聚萘二甲酸醇酯(polyester naphthalate),和聚碳酸酯),诸如酚醛树脂或者甲酚甲醛树脂

Figure BDA0002179531910000131
之类的具有高芳香度的聚合物,聚苯乙烯,聚甲基苯乙烯(polyvinyltoluene),聚乙二烯(polyvinylxylene),聚酰亚胺,聚酰胺,聚酰胺亚胺,聚醚酰亚胺,聚硫化物,聚砜,聚苯,以及聚苯醚,聚氨基甲酸酯(PU),环氧,聚烯烃(例如,聚丙烯,聚甲基戊烯,和环烯烃(cyclic olefins)),丙烯腈-丁二烯-苯乙烯共聚物(ABS),纤维素,硅酮及其他含硅聚合物(例如,聚倍半硅氧烷和聚硅烷),聚氯乙烯(PVC),多醋酸盐(polyacetates),聚降冰片烯(polynorbornenes),合成橡胶(例如,EPR,SBR,EPDM),和含氟聚合物(例如,聚偏二氟乙烯,聚四氟乙烯(TFE)或者聚六氟丙烯),荧光烯烃和烃烯烃的共聚物(例如,
Figure BDA0002179531910000132
),非晶氟碳聚合物或者共聚物(例如由Asahi Glass公司提供的
Figure BDA0002179531910000141
或者由杜邦公司提供的
Figure BDA0002179531910000142
AF)。In certain embodiments, metal nanostructures can form conductive networks on substrates without the use of adhesives. In other embodiments, a glue may be provided to facilitate adhesion of the nanostructures to the substrate. Suitable adhesives include optically clear polymers including, but not limited to, polyacrylates such as polymethacrylates (eg, poly(methyl methacrylate)), polyacrylates and Polyacrylonitrile, polyvinyl alcohol, polyesters (eg, polyethylene terephthalate (PET), polyethylene naphthalate, and polycarbonate), such as phenolic resins or cresol formaldehyde resin
Figure BDA0002179531910000131
Highly aromatic polymers such as polystyrene, polyvinyltoluene, polyvinylxylene, polyimide, polyamide, polyamidoimide, polyetherimide , polysulfides, polysulfones, polyphenylenes, and polyphenylene oxides, polyurethanes (PU), epoxies, polyolefins (eg, polypropylene, polymethylpentene, and cyclic olefins) , acrylonitrile-butadiene-styrene copolymer (ABS), cellulose, silicone and other silicon-containing polymers (eg, polysilsesquioxane and polysilane), polyvinyl chloride (PVC), polyester Polyacetates, polynorbornenes, synthetic rubbers (eg, EPR, SBR, EPDM), and fluoropolymers (eg, polyvinylidene fluoride, polytetrafluoroethylene (TFE), or polyhexanol) fluoropropylene), copolymers of fluorescent olefins and hydrocarbon olefins (e.g.,
Figure BDA0002179531910000132
), amorphous fluorocarbon polymers or copolymers (such as those available from Asahi Glass
Figure BDA0002179531910000141
or provided by DuPont
Figure BDA0002179531910000142
AF).

“基板”是指在其上涂布或者层叠金属纳米结构的非导电材料。基板可以是刚性的或者柔性的。基板可以是透明的或者不透明的。适当的刚性基板例如包括玻璃、聚碳酸酯、丙烯酸系树脂等等。适当的柔性基板包括但是不局限于:聚酯(例如聚对苯二甲酸乙二醇酯(PET),聚萘二甲酸醇酯,以及聚碳酸酯),聚烯烃(例如线型、支化以及环状聚烯烃),聚乙烯(例如,聚氯乙烯、聚偏二氯乙烯、聚乙烯醇缩醛、聚苯乙烯、聚丙烯酸酯等等),纤维素酯基(例如,三醋酸纤维素,乙酸纤维素),诸如聚醚砜之类的聚砜,聚酰亚胺,硅酮,及其他传统的聚合物膜。可以在例如美国专利号6,975,067中找到适当基板的额外实例。"Substrate" refers to a non-conductive material on which metal nanostructures are coated or laminated. The substrate can be rigid or flexible. The substrate may be transparent or opaque. Suitable rigid substrates include, for example, glass, polycarbonate, acrylic, and the like. Suitable flexible substrates include, but are not limited to, polyesters (eg, polyethylene terephthalate (PET), polyethylene naphthalate, and polycarbonate), polyolefins (eg, linear, branched, and cyclic polyolefins), polyethylene (eg, polyvinyl chloride, polyvinylidene chloride, polyvinyl acetal, polystyrene, polyacrylates, etc.), cellulose ester bases (eg, cellulose triacetate, cellulose acetate), polysulfones such as polyethersulfone, polyimide, silicone, and other conventional polymer membranes. Additional examples of suitable substrates can be found, for example, in US Pat. No. 6,975,067.

一旦在基板上形成了纳米结构层,创建基础透明导体。所述基础透明导体可以进一步与其他功能层/膜集成以形成光学叠层。Once the nanostructured layer is formed on the substrate, a base transparent conductor is created. The base transparent conductor can be further integrated with other functional layers/films to form an optical stack.

典型地,透明导体(即,非导电基板上的导电网络)的光学透明性或者透明度,可以通过包含透光性和雾度在内的参数来定量地定义。“透光性”(或者“光透射率”)是指透射通过介质的入射光的百分比。在多种实施例中,导电层的透光性至少为80%,并且可以高达98%。诸如粘合层、抗反射层或者防眩层之类的性能增强层可能导致进一步降低透明导体的整体透光性。在多种实施例中,透明导体的透光性(T%)可以至少是50%,至少是60%,至少是70%,或者至少是80%,并且可以高达至少是91%到92%,或者至少是95%。Typically, the optical transparency or transparency of a transparent conductor (ie, a conductive network on a non-conductive substrate) can be quantitatively defined by parameters including light transmission and haze. "Light transmittance" (or "light transmittance") refers to the percentage of incident light that is transmitted through a medium. In various embodiments, the light transmittance of the conductive layer is at least 80%, and can be as high as 98%. Performance enhancing layers such as adhesive layers, anti-reflection layers or anti-glare layers may result in a further reduction in the overall light transmission of the transparent conductor. In various embodiments, the light transmission (T%) of the transparent conductor can be at least 50%, at least 60%, at least 70%, or at least 80%, and can be as high as at least 91 to 92%, Or at least 95%.

雾度(H%)是衡量光散射的尺度。雾度是指在透射期间从入射光中分离、并且被散射的光量。不同于透光性(其基本上是介质的性质),雾度是制造经常关心的问题,并且通常是由表面粗糙度以及介质中的嵌入颗粒或者组成非均质性所引起的。典型地,导电膜的雾度可能受到纳米结构的直径的显著影响。更大直径的纳米结构(例如,更厚的纳米线)通常与更高的雾度相关联。在多种实施例中,透明导体的雾度不超过10%,不超过8%,或者不超过5%,并且可以低到不超过2%,不超过1%,或者不超过0.5%,或者不超过0.25%。Haze (H%) is a measure of light scattering. Haze refers to the amount of light that is separated from incident light and scattered during transmission. Unlike light transmission, which is essentially a property of the medium, haze is a constant manufacturing concern and is often caused by surface roughness as well as embedded particles or compositional inhomogeneities in the medium. Typically, the haze of a conductive film can be significantly affected by the diameter of the nanostructures. Larger diameter nanostructures (eg, thicker nanowires) are generally associated with higher haze. In various embodiments, the haze of the transparent conductor is no more than 10%, no more than 8%, or no more than 5%, and may be as low as no more than 2%, no more than 1%, or no more than 0.5%, or no more than more than 0.25%.

涂布组合物coating composition

根据本公开内容的图案化的透明导体是通过在非导电性基板上涂布包含纳米结构的涂布组合物而制备的。为了形成涂布组合物,通常在挥发性液体中分散金属纳米线,以促进涂布工艺。应理解的是,如此处使用的,可以使用金属纳米线能够在其中形成稳定分散物的任何无腐蚀性的挥发性液体。优选的是,金属纳米线被分散在水、醇类、酮类、醚类、烃类或者芳香族溶剂(苯、甲苯、二甲苯等等)中。更优选为,该液体是挥发性的,具有不超过200℃、不超过150℃或者不超过100℃的沸点。Patterned transparent conductors according to the present disclosure are prepared by coating a nanostructure-containing coating composition on a non-conductive substrate. To form coating compositions, metal nanowires are typically dispersed in a volatile liquid to facilitate the coating process. It should be understood that, as used herein, any non-corrosive volatile liquid in which the metal nanowires can form stable dispersions can be used. Preferably, the metal nanowires are dispersed in water, alcohols, ketones, ethers, hydrocarbons or aromatic solvents (benzene, toluene, xylene, etc.). More preferably, the liquid is volatile and has a boiling point of no more than 200°C, no more than 150°C, or no more than 100°C.

另外,金属纳米线分散物可以包含添加剂和胶合剂,以控制粘度、腐蚀性、胶合性和纳米线分散性。适当的添加剂和胶合剂的实例包括但是不局限于:羧甲基纤维素(CMC)、羟乙基纤维素(HEC)、羟丙基甲基纤维素(HPMC)、甲基纤维素(MC)、聚乙烯醇(PVA)、三丙二醇(TPG)和黄原胶(XG),以及表面活性剂,比如乙氧基化物(ethoxylates)、烷氧基化物(alkoxylates)、环氧乙烷(ethylene oxide)和环氧丙烷(propylene oxide)以及它们的共聚物、磺酸盐、硫酸盐、二磺酸盐、磺基琥珀酸酯(sulfosuccinates)、磷酸酯(phosphateesters)和氟表面活性剂(例如、由杜邦公司提供的

Figure BDA0002179531910000151
)。In addition, the metal nanowire dispersions may contain additives and binders to control viscosity, corrosion, adhesion, and nanowire dispersibility. Examples of suitable additives and binders include, but are not limited to: carboxymethyl cellulose (CMC), hydroxyethyl cellulose (HEC), hydroxypropyl methyl cellulose (HPMC), methyl cellulose (MC) , polyvinyl alcohol (PVA), tripropylene glycol (TPG) and xanthan gum (XG), and surfactants such as ethoxylates, alkoxylates, ethylene oxide ) and propylene oxide and their copolymers, sulfonates, sulfates, disulfonates, sulfosuccinates, phosphate esters and fluorosurfactants (eg, by Provided by DuPont
Figure BDA0002179531910000151
).

在一个实例中,纳米线分散物或者“墨水”按重量来讲包括从0.0025%至0.1%的表面活性剂(例如,优选范围对于

Figure BDA0002179531910000152
FSO-100来说是从0.0025%至0.05%),从0.02%至4%的粘度调节剂(例如,优选范围对于HPMC来说是0.02%至0.5%),从94.5%至99.0%的溶剂,以及从0.05%至1.4%的金属纳米线。适当的表面活性剂的代表性实例包括
Figure BDA0002179531910000153
FSN,
Figure BDA0002179531910000154
FSO,
Figure BDA0002179531910000155
FSH,Triton(x100,x114,x45),Dynol(604,607),n-Dodecyl b-D-maltoside和Novek。适当的粘度调节剂的实例包括羟丙基甲基纤维素(HPMC)、甲基纤维素、黄原胶、聚乙烯醇、羧甲基纤维素和羟乙基纤维素。适当的溶剂的实例包括水和异丙醇。In one example, the nanowire dispersion or "ink" includes from 0.0025% to 0.1% by weight of surfactant (eg, the preferred range for
Figure BDA0002179531910000152
From 0.0025% to 0.05% for FSO-100), from 0.02% to 4% viscosity modifier (eg, the preferred range is 0.02% to 0.5% for HPMC), from 94.5% to 99.0% solvent, and metal nanowires from 0.05% to 1.4%. Representative examples of suitable surfactants include
Figure BDA0002179531910000153
FSN,
Figure BDA0002179531910000154
FSO,
Figure BDA0002179531910000155
FSH, Triton (x100, x114, x45), Dynol (604, 607), n-Dodecyl bD-maltoside and Novek. Examples of suitable viscosity modifiers include hydroxypropyl methylcellulose (HPMC), methylcellulose, xanthan gum, polyvinyl alcohol, carboxymethylcellulose, and hydroxyethylcellulose. Examples of suitable solvents include water and isopropanol.

分散物中的纳米线浓度能够影响或者确定纳米线网络层的诸如厚度、导电性(包括表面导电性)、光学透明性和机械性质之类的参数。可以调节溶剂的百分比,以提供分散物中的纳米线的期望浓度。然而,在优选实施例中,其他成分的相对比率可以保持相同。特别是,表面活性剂相对于粘度调节剂的比率优选的是在约80至约0.01的范围内;粘度调节剂相对于金属纳米线的比率优选的是在约5至约0.000625的范围内;金属纳米线相对于表面活性剂的比率优选的是在约560至约5的范围内。可以依据所使用的基板和涂敷方法来修改分散物的组分的比率。纳米线分散物的优选粘度范围是在约1和100cP之间。The nanowire concentration in the dispersion can affect or determine parameters such as thickness, conductivity (including surface conductivity), optical transparency, and mechanical properties of the nanowire network layer. The percentage of solvent can be adjusted to provide the desired concentration of nanowires in the dispersion. However, in preferred embodiments, the relative ratios of the other ingredients may remain the same. In particular, the ratio of the surfactant to the viscosity modifier is preferably in the range of about 80 to about 0.01; the ratio of the viscosity modifier to the metal nanowire is preferably in the range of about 5 to about 0.000625; the metal The ratio of nanowires to surfactant is preferably in the range of about 560 to about 5. The ratios of the components of the dispersion can be modified depending on the substrate used and the coating method. The preferred viscosity range for nanowire dispersions is between about 1 and 100 cP.

在涂布之后,通过蒸发去除挥发性液体。可以通过加热(例如,烘焙)加速蒸发。结果得到的纳米线网络层可能需要后续处理以使其成为电性导电的。这种后续处理可以是包含如下所述的暴露于热量、等离子、电晕放电、UV-臭氧或者压力的处理步骤。After coating, the volatile liquid is removed by evaporation. Evaporation can be accelerated by heating (eg, baking). The resulting nanowire network layer may require subsequent processing to make it electrically conductive. This subsequent treatment may be a treatment step comprising exposure to heat, plasma, corona discharge, UV-ozone or pressure as described below.

适当的涂布组合物的实例在全部属于本公开内容受让人凯博瑞奥斯技术公司名下的美国公布申请号2007/0074316、2009/0283304、2009/0223703和2012/0104374中进行了描述。Examples of suitable coating compositions are described in U.S. Published Application Nos. 2007/0074316, 2009/0283304, 2009/0223703, and 2012/0104374, all in the name of Kyberios Technologies, Inc., the assignee of the present disclosure .

通过例如片覆涂布(sheet coating)、网纹涂布(web coating)、印刷和层叠(lamination),将涂布组合物涂布在基板上,以提供透明导体。用于通过导电性纳米结构制造透明导体的额外信息例如在属于凯博瑞奥斯技术公司名下的美国公布专利申请号2008/0143906和2007/0074316中进行了公开。The coating composition is applied to the substrate by, for example, sheet coating, web coating, printing and lamination to provide transparent conductors. Additional information for making transparent conductors from conductive nanostructures is disclosed, for example, in US Published Patent Application Nos. 2008/0143906 and 2007/0074316 in the name of Kyberios Technologies, Inc.

将通过以下非限制性实例更详细地举例说明所述透明导体结构、它们的电学和光学性质、以及图案化方法。The transparent conductor structures, their electrical and optical properties, and patterning methods will be illustrated in more detail by the following non-limiting examples.

实例Example

实例1Example 1

银纳米线的合成Synthesis of Silver Nanowires

银纳米线是通过在存在聚乙烯吡咯烷酮(PVP)的情况下对溶于乙二醇中的硝酸银进行还原而合成的,这遵循了例如Y.Sun、B.Gates、B.Mayers与Y.Xia在Nanoletters(2002),2(2)165-168发布的“Crystalline silver nanowires by soft solutionprocessing”中描述的“多元醇”方法。在属于凯博瑞奥斯技术公司名下的美国公布申请号2008/0210052和2011/0174190中描述的改进型多元醇方法,以高于传统“多元醇”方法的产量来制造更均匀的银纳米线。这些申请都在此被全部并入以供参考。Silver nanowires were synthesized by reduction of silver nitrate dissolved in ethylene glycol in the presence of polyvinylpyrrolidone (PVP), following for example Y. Sun, B. Gates, B. Mayers and Y. The "polyol" method described by Xia in "Crystalline silver nanowires by soft solution processing" published by Nanoletters (2002), 2(2) 165-168. The improved polyol process described in U.S. Published Application Nos. 2008/0210052 and 2011/0174190 in the name of Cabrios Technologies, Inc. produces more uniform silver nanoparticles at higher yields than conventional "polyol" processes Wire. All of these applications are hereby incorporated by reference in their entirety.

实例2Example 2

标准的膜制造过程Standard Membrane Manufacturing Process

制备墨水组合物,所述墨水组合物包括银纳米线、基于纤维素的胶合剂、以及表面活性剂(例如,诸如

Figure BDA0002179531910000171
FSA之类的氟表面活性剂)。所述墨水以狭缝模具(slot-die)、卷装进出(roll-to-roll)的方式涂布在PET膜(例如,MELINEX-454或者TORAY U483)上,并且使所述墨水干燥以形成纳米线层。对于某些实施例,随后在所述纳米线层上涂敷聚合物覆盖涂层。An ink composition is prepared that includes silver nanowires, a cellulose-based binder, and a surfactant (eg, such as
Figure BDA0002179531910000171
Fluorosurfactants such as FSA). The ink is applied on a PET film (eg, MELINEX-454 or TORAY U483) in a slot-die, roll-to-roll manner, and the ink is allowed to dry to A nanowire layer is formed. For certain embodiments, a polymer capcoat is subsequently applied over the nanowire layer.

所述卷装进出工艺可以适应各式各样的基板和膜尺寸。适当的卷装进出沉积工艺可以包括但是不局限于:狭缝模具,凹版印刷,反向凹版印刷,微凹版印刷,逆转辊(reverseroll),以及麦勒棒(Mayerbar)。卷装进出工艺的更详细说明可以在属于本申请受让人凯博瑞奥斯技术公司名下的美国专利号8,049,333以及美国公布专利申请号2013/0040106中找到。这两个专利文件都在此处被全部并入以供参考。The roll-to-roll process can accommodate a wide variety of substrate and film sizes. Suitable in-roll deposition processes may include, but are not limited to, slot die, gravure, reverse gravure, microgravure, reverse roll, and Mayerbar. A more detailed description of the in-and-out process can be found in US Patent No. 8,049,333 and US Published Patent Application No. 2013/0040106 in the name of the assignee of the present application, Kyberios Technologies, Inc. Both of these patent documents are hereby incorporated by reference in their entirety.

实例3Example 3

具有和没有UV阻挡层的膜的光稳定性Light stability of films with and without UV blocking layer

图14A中示出了没有UV阻挡层的样本光学叠层1000。首先根据实例2制造基础透明导电膜1010,基础透明导电膜1010具有PET基板1020和联网银纳米线层1030。随后,基础透明导电膜被安装在一片Eagle XG玻璃1040上,并围绕边缘用胶带1050固定。纳米线1030面对玻璃1040,并且与玻璃1040松散地接触,但是不用任何粘合剂接合至玻璃1040。为了图解这种配置,示意性地示出气隙1044。A sample optical stack 1000 without the UV blocking layer is shown in Figure 14A. First, a base transparent conductive film 1010 having a PET substrate 1020 and a networked silver nanowire layer 1030 was fabricated according to Example 2. Subsequently, the base transparent conductive film was mounted on a piece of Eagle XG glass 1040 and secured with tape 1050 around the edges. The nanowires 1030 face the glass 1040 and are in loose contact with the glass 1040, but are bonded to the glass 1040 without any adhesive. To illustrate this configuration, the air gap 1044 is shown schematically.

图14B中示出了另一具有UV阻挡层的样本光学叠层1060,该样本光学叠层1060可以是基于图14A的光学叠层1000,通过在所述玻璃的与纳米线相对的表面上层叠UV阻挡膜1070来制造。Another sample optical stack 1060 with a UV blocking layer is shown in FIG. 14B, which may be based on the optical stack 1000 of FIG. 14A by laminating on the surface of the glass opposite the nanowires UV blocking film 1070 is produced.

图14C示出裸Eagle XG玻璃的透射光谱,与层叠有UV阻挡膜的玻璃的透射光谱相对比。如图所示,尽管所述玻璃允许高达90%的紫外光(低于370纳米)透射通过,但是具有UV阻挡层的玻璃阻挡了几乎所有的低于370nm的光(接近零透射)。Figure 14C shows the transmission spectrum of bare Eagle XG glass, compared to the transmission spectrum of glass laminated with a UV blocking film. As shown, while the glass allows transmission of up to 90% of UV light (below 370 nm), glass with a UV blocking layer blocks nearly all light below 370 nm (near zero transmission).

利用Delcom 717非接触电阻计测量每个膜的薄层电阻。平均薄层电阻大约为130ohms/square。The sheet resistance of each film was measured using a Delcom 717 non-contact resistance meter. The average sheet resistance is approximately 130 ohms/square.

将所述样本放置在具有Atlas“日光”滤光器的Atlas XXL+氙灯耐候测试机中。设置所述样本的方位,以使所述玻璃位于膜和光源之间。光线强度被设置为420nm处的0.8W/m2*nm,并且光谱和强度非常匹配直射日光。环境条件设定为:The samples were placed in an Atlas XXL+ Xenon Lamp Weathering Machine with an Atlas "Daylight" filter. The sample is oriented so that the glass is between the film and the light source. The light intensity was set to 0.8W/m2*nm at 420nm, and the spectrum and intensity closely matched direct sunlight. The environmental conditions are set to:

38℃室温38℃ room temperature

60℃黑板温度,以及60°C blackboard temperature, and

50%相对湿度。50% relative humidity.

周期性地移出样本,并且进行电学测量。Periodically samples are removed and electrical measurements are taken.

图14D示出对于所述两个样本(光学叠层1000和1060)的薄层电阻的时间演化。能够看出,当阻挡了入射光的UV部分时,薄层电阻的增加要缓慢得多。Figure 14D shows the time evolution of sheet resistance for the two samples (optical stacks 1000 and 1060). It can be seen that the increase in sheet resistance is much slower when the UV portion of the incident light is blocked.

实例4Example 4

具有UV阻挡层的层叠膜的光稳定性Light Stability of Laminated Films with UV Blocking Layers

根据实例2制备基础透明导电膜。所述膜的平均薄层电阻是130ohms/sq。将各个膜层叠到具有OCA层(3M 8146-2)的各个Eagle XG玻璃,并使得纳米线层接触所述OCA层并且面对所述玻璃。对于某些样本,将UV阻挡膜涂敷到所述玻璃的相对表面。对于全部样本,将黑色电工胶带应用到所述玻璃的与纳米线层相对的表面,以使得所述样本的一半被黑色胶带覆盖。样本配置与图3中所示的实施例相同。A base transparent conductive film was prepared according to Example 2. The average sheet resistance of the film was 130 ohms/sq. Each film was laminated to each Eagle XG glass with an OCA layer (3M 8146-2) with the nanowire layer in contact with the OCA layer and facing the glass. For some samples, UV blocking films were applied to opposite surfaces of the glass. For all samples, black electrical tape was applied to the surface of the glass opposite the nanowire layer so that half of the sample was covered with black tape. The sample configuration is the same as the embodiment shown in FIG. 3 .

样本尺寸是2"x 3"。使用Delcom 717非接触薄层电阻计在以下三个位置处测量薄层电阻:暗区中心,亮区中心,以及亮/暗交界面处(即“边缘”,不过这并不是样本的实体边缘)。Delcom使用涡流测量薄层电阻,并且感测半径大约是1cm。Sample size is 2" x 3". Sheet resistance was measured using a Delcom 717 non-contact sheet resistance meter at three locations: the center of the dark area, the center of the light area, and at the light/dark interface (the "edge", although this is not the physical edge of the sample) . Delcom uses eddy current to measure sheet resistance, and the sensing radius is about 1 cm.

在相同的试验条件下,以玻璃侧朝上的方式,将所述样本放置在实例3中描述的氙灯室内。在各个时间处移出所述样本,并且重复电学测量。数据在图15中示出。对于没有UV阻挡层的样本,在75和150小时之间的某一时间,薄层电阻信号在边缘位置处陡然增加,然而薄层电阻在暗区和亮区中没有增加。The samples were placed in the xenon arc chamber described in Example 3 with the glass side up under the same test conditions. The samples were removed at various times and the electrical measurements were repeated. The data is shown in Figure 15. For the samples without the UV blocking layer, at some time between 75 and 150 hours, the sheet resistance signal increased sharply at the edge locations, while the sheet resistance did not increase in the dark and light regions.

对于具有UV阻挡膜的样本,直到大约300小时的光晒为止,薄层电阻都未观察到任何可感知的变化。超过300小时之后,薄层电阻在照明区中均匀地增加,而不是特定在亮暗交界面处增加。由此,阻挡光谱的UV部分能够增加样本使用寿命,并且使得破坏模式发生变化。For the samples with the UV blocking film, no appreciable change in sheet resistance was observed until approximately 300 hours of light exposure. After more than 300 hours, the sheet resistance increased uniformly in the illuminated region, rather than specifically at the light-dark interface. Thus, blocking the UV portion of the spectrum can increase sample lifetime and allow for a change in damage mode.

因此,阻挡光的UV部分的最终效果显示为提高了在样本的任何部分中发生可感知的电阻增加之前的对于光晒的耐久性。Thus, the net effect of blocking the UV portion of the light appears to be improved durability to light exposure before an appreciable increase in resistance occurs in any portion of the sample.

实例5Example 5

在降低强度的模拟日光下具有UV阻挡层的膜的光稳定性Photostability of Films with UV Blocking Layers under Reduced Intensity Simulated Sunlight

制备基本上与在实例2中所述样本相同的基础透明导电膜的样本。所述样本被放置在具有折起边缘的金属烘盘中,并使得所述玻璃侧朝上。随后,用三层的丝网筛覆盖所述烘盘,所述丝网筛具有每英寸60、100和325丝的网目数。当利用分光光度计测量时,所述三层网筛的组合透射率为大约5%,并且基本上独立于超过300nm的波长。所述网筛被夹在所述烘盘的边缘上,以防止杂散光进入。A sample of the base transparent conductive film was prepared essentially the same as the sample described in Example 2. The samples were placed in a metal baking pan with a folded edge with the glass side up. The pan was then covered with three layers of wire mesh screens having mesh counts of 60, 100 and 325 wires per inch. The combined transmittance of the triple mesh screen was approximately 5% when measured with a spectrophotometer and was substantially independent of wavelengths above 300 nm. The mesh screen is clamped to the edge of the pan to prevent stray light from entering.

在与实例3和4中相同的条件下,将所述烘盘放置到氙灯室内,并且周期性地移出所述样本以获得电学特性。尽管氙灯室内的光源与实例3和4相同,但是所述丝网降低了入射到样本上的光线强度。Under the same conditions as in Examples 3 and 4, the baking pan was placed into a xenon arc chamber, and the samples were periodically removed to obtain electrical properties. Although the light source in the xenon arc chamber was the same as in Examples 3 and 4, the wire mesh reduced the intensity of light incident on the sample.

图16中示出了结果。对照样本(没有UV阻挡层)的薄层电阻持续增加,并且是在约200小时内增加了100%。与实例2的结果(其显示出“边缘破坏”)相反,边缘处的电阻增加落后于照明区中的较强增加。令人惊讶的是,即使光线强度已经减少了20倍,发生破坏的时标并没有略微不同。这被认为是光氧化反应在全强度氙灯光晒下主要受到氧扩散(而不是光强度)的限制的结果。The results are shown in FIG. 16 . The sheet resistance of the control sample (without the UV blocking layer) continued to increase and was a 100% increase in about 200 hours. Contrary to the results of Example 2, which showed "edge destruction", the increase in resistance at the edge lagged behind the stronger increase in the illuminated area. Surprisingly, even though the light intensity has been reduced by a factor of 20, the timing of the destruction is not slightly different. This is believed to be a result of the photo-oxidation reaction under full-intensity xenon light being mainly limited by oxygen diffusion (rather than light intensity).

与此相反,具有UV阻挡层的样本对于至少1300小时是稳定的。In contrast, the samples with the UV blocking layer were stable for at least 1300 hours.

实例6Example 6

暴露于经由窗口的间接光的膜的光稳定性Photostability of films exposed to indirect light through windows

制备具有与先前实例相似的结构的样本,并将样本放置为紧挨着办公楼中的两个不同的朝北窗口。将所述窗口染色为相似的灰色程度,但是它们的UV透射率不同。使用Atlas LS200校准光谱仪在上午11点获取两个窗口在几分钟内的辐射光谱(Irradiancespectra),并且在图17A中示出。还示出了通过将光谱仪放置在蓝天(没有直射日光,仅仅有漫射日光)下、以及直接放置在太阳下获取的光谱,以作参考。两者都是在相同时间的晴天的户外获得的。能够看出,窗口#2透射的紫外光比窗口#1少了约十倍。A sample with a similar structure to the previous example was prepared and placed next to two different north facing windows in an office building. The windows were dyed to a similar shade of grey, but their UV transmission differed. Irradiance spectra for two windows over a few minutes were acquired at 11 am using an Atlas LS200 calibrated spectrometer and are shown in Figure 17A. Spectra obtained by placing the spectrometer under a blue sky (no direct sunlight, only diffuse sunlight) and directly under the sun are also shown for reference. Both were obtained outdoors on a sunny day at the same time. It can be seen that window #2 transmits about ten times less UV light than window #1.

图17B中示出了紧挨着两个窗口的样本(没有内部的UV阻挡层)的电阻数据。具有较低UV透射率的窗口后面的样本更加稳定,再次印证了UV阻挡的益处。The resistance data for the sample next to the two windows (without the inner UV blocking layer) is shown in Figure 17B. The samples behind the window with lower UV transmission were more stable, again demonstrating the benefit of UV blocking.

实例7Example 7

将UV阻挡层加入到光学叠层中Adding UV blocking layers to optical stacks

可以将UV阻挡层直接加入到触摸传感器结构的光学膜叠层中,而无需将UV阻挡涂层或者膜涂敷到玻璃盖板镜片上。利用图18A和18B中示出的结构来制备样本。The UV blocking layer can be added directly to the optical film stack of the touch sensor structure without the need to apply a UV blocking coating or film to the cover glass lens. Samples were prepared using the structures shown in Figures 18A and 18B.

图18A示出了光学叠层1100的构造。更具体地说,示出了基础透明导电膜1110以UV阻挡OCA层1120介于中间的方式接合至玻璃盖板1130。基础透明导电膜1110包括基板1112和多个联网银纳米线1114。基板1112可以是PET膜。UV阻挡OCA层是3M 8172PCL,并且与银纳米线1114直接接触。在图18A中,在光学叠层1100的外围上示出遮光掩模1140,用于仿制暗/亮交界面。FIG. 18A shows the configuration of the optical stack 1100 . More specifically, the base transparent conductive film 1110 is shown bonded to the glass cover plate 1130 with the UV blocking OCA layer 1120 interposed. The base transparent conductive film 1110 includes a substrate 1112 and a plurality of networked silver nanowires 1114 . The substrate 1112 may be a PET film. The UV blocking OCA layer is 3M 8172PCL and is in direct contact with the silver nanowires 1114. In Figure 18A, a light-shielding mask 1140 is shown on the periphery of the optical stack 1100 to mimic the dark/light interface.

当某些UV阻挡OCA层中的化学物质与银纳米线相互作用、或者与银纳米线不兼容时,优选的是UV阻挡OCA层和银纳米线彼此不发生直接接触。因此,在一替代配置中,在UV阻挡层和银纳米线之间加入干涉层。图18B示出所述干涉层可以是基础透明导电膜(

Figure BDA0002179531910000201
膜)的基板。While some of the chemistries in the UV blocking OCA layer interact with, or are incompatible with, the silver nanowires, it is preferred that the UV blocking OCA layer and the silver nanowires do not come into direct contact with each other. Therefore, in an alternative configuration, an interference layer is added between the UV blocking layer and the silver nanowires. FIG. 18B shows that the interference layer may be a base transparent conductive film (
Figure BDA0002179531910000201
film) substrate.

更具体地说,在图18B中,通过将第一基板1210以第一OCA层1220介于中间的方式接合至基础透明导电膜1110来构造光学叠层1200,所述基础透明导电膜1110包括第二基板1112和多个联网银纳米线1114。第一OCA层1220不需要阻挡紫外光,而是选择为与银纳米线1114化学兼容,以使得与银纳米线的直接接触不会使它们不稳定。第一OCA层的一个实例是3M 8146。替代地,第一OCA层可以是光学透明树脂(OCR)层,包括现有技术中已知的用于将触摸传感器直接接合至显示器的任何OCR层。第一基板1210和第二基板1112可以是PET膜。在替代的实施例中,所述第一基板还可以包括显示器。More specifically, in FIG. 18B, the optical stack 1200 is constructed by bonding the first substrate 1210 to the base transparent conductive film 1110 with the first OCA layer 1220 interposed, the base transparent conductive film 1110 including the first OCA layer 1220. Two substrates 1112 and a plurality of interconnected silver nanowires 1114 . The first OCA layer 1220 need not block UV light, but is chosen to be chemically compatible with the silver nanowires 1114 so that direct contact with the silver nanowires does not destabilize them. An example of the first OCA layer is 3M 8146. Alternatively, the first OCA layer may be an optically clear resin (OCR) layer, including any OCR layer known in the art for directly bonding a touch sensor to a display. The first substrate 1210 and the second substrate 1112 may be PET films. In alternative embodiments, the first substrate may also include a display.

随后,基础透明导电膜1110以UV阻挡OCA层1120介于中间的方式接合至玻璃盖板1130。不同于图18A,图18B示出了基础透明导电膜1110通过它的基板1120来接触UV阻挡OCA层1120,由此避免了银纳米线1114和UV阻挡OCA层之间的直接接触。UV阻挡层的一个实例是3M 8172PCL。在图18B中,在光学叠层1200的外围上示出遮光掩模1140,用于仿制暗/亮交界面。Subsequently, the base transparent conductive film 1110 is bonded to the glass cover plate 1130 with the UV blocking OCA layer 1120 interposed therebetween. Unlike FIG. 18A, FIG. 18B shows the base transparent conductive film 1110 contacting the UV blocking OCA layer 1120 through its substrate 1120, thereby avoiding direct contact between the silver nanowires 1114 and the UV blocking OCA layer. An example of a UV blocking layer is 3M 8172PCL. In Figure 18B, a light-shielding mask 1140 is shown on the periphery of the optical stack 1200 to mimic the dark/light interface.

在这两种配置中,都采用了UV阻挡OCA层1120,UV阻挡OCA层1120用于接合以及阻挡入射在光学叠层上的光谱的UV区域的双重功能。这些配置使得不再需要单独地涂敷UV阻挡涂层。然而,也可例如在玻璃盖板上设置额外的UV阻挡涂层。In both configurations, a UV blocking OCA layer 1120 is employed which serves the dual function of bonding and blocking the UV region of the spectrum incident on the optical stack. These configurations eliminate the need to apply a separate UV blocking coating. However, additional UV blocking coatings can also be provided, eg on the glass cover plate.

通过与实例3相同的方式测试光学叠层的光稳定性。在本范例中,仅仅在光晒位置以及亮/暗交界面位置处采集薄层电阻数据。图18C示出光学叠层1100和光学叠层1200的薄层电阻的变化。光学叠层1100显示出不良的光稳定性,这最可能是由于银纳米线和UV阻挡OCA层之间的不兼容性所引起的银纳米线的不稳定或者老化而导致的。The light stability of the optical stack was tested in the same manner as in Example 3. In this example, sheet resistance data was collected only at the light exposure location and the light/dark interface location. FIG. 18C shows the variation in sheet resistance of optical stack 1100 and optical stack 1200 . The optical stack 1100 exhibits poor photostability, most likely due to destabilization or aging of the silver nanowires caused by incompatibility between the silver nanowires and the UV blocking OCA layer.

而另一方面,光学叠层1200在500小时光晒期间内显示出光稳定性。这一结果表明,通过避免不兼容的UV阻挡OCA和银纳米线之间的直接接触,UV阻挡OCA层能够通过阻挡紫外光而稳定光学叠层的性能。On the other hand, the optical stack 1200 exhibited photostability over a 500 hour light exposure period. This result suggests that the UV-blocking OCA layer is able to stabilize the performance of the optical stack by blocking UV light by avoiding direct contact between the incompatible UV-blocking OCA and the silver nanowires.

在本说明书中提及的以及在申请数据表中列出的上述所有美国专利、美国专利申请公开文本、美国专利申请、国外专利、国外专利申请和非专利公开文本,在此都被整体并入以供参考。All of the above US patents, US patent application publications, US patent applications, foreign patents, foreign patent applications and non-patent publications referred to in this specification and listed in the Application Data Sheet are hereby incorporated in their entirety. for reference.

由上文可以理解的是,尽管此处为了例证说明的目的而描述了本发明的具体实施例,但是在不背离本发明的精神上和范围的情况下,可以做出各种修改。It will be understood from the foregoing that although specific embodiments of the invention are described herein for illustrative purposes, various modifications may be made without departing from the spirit and scope of the invention.

Claims (10)

1.一种触摸传感器,包括:1. A touch sensor comprising: 第一基础透明导体,具有第一基板和第一多个联网银纳米结构;a first base transparent conductor having a first substrate and a first plurality of networked silver nanostructures; 盖板;和cover; and 第一光学透明胶层,设置于所述盖板与所述第一基础透明导体之间;a first optically transparent adhesive layer disposed between the cover plate and the first basic transparent conductor; 其中所述盖板具有接收入射光和触摸输入的表面,以及wherein the cover plate has a surface that receives incident light and touch input, and 其中所述第一光学透明胶层是UV阻挡层,所述第一光学透明胶层和所述第一多个联网银纳米结构不兼容,所述第一光学透明胶层和所述第一多个联网银纳米结构彼此不发生直接接触。wherein the first optically clear adhesive layer is a UV blocking layer, the first optically clear adhesive layer is incompatible with the first plurality of networked silver nanostructures, the first optically clear adhesive layer and the first plurality of interconnected silver nanostructures are incompatible. The networked silver nanostructures do not come into direct contact with each other. 2.根据权利要求1所述的触摸传感器,其中所述第一光学透明胶层和所述第一多个联网银纳米结构之间具有干涉层。2. The touch sensor of claim 1, wherein there is an interference layer between the first optically clear adhesive layer and the first plurality of networked silver nanostructures. 3.根据权利要求1所述的触摸传感器,其中所述第一基板具有第一表面及第二表面,所述第一光学透明胶层设置于所述盖板与所述第一表面之间,所述第一多个联网银纳米结构设置于所述第二表面。3. The touch sensor according to claim 1, wherein the first substrate has a first surface and a second surface, the first optically transparent adhesive layer is disposed between the cover plate and the first surface, The first plurality of networked silver nanostructures are disposed on the second surface. 4.根据权利要求3所述的触摸传感器,更包括第二基础透明导体和第二光学透明胶层,其中所述第二光学透明胶层设置于所述第二基础透明导体与所述第一基础透明导体之间。4. The touch sensor according to claim 3, further comprising a second base transparent conductor and a second optically transparent adhesive layer, wherein the second optically transparent adhesive layer is disposed between the second base transparent conductor and the first between the base transparent conductors. 5.根据权利要求4所述的触摸传感器,其中所述第二光学透明胶层兼容于所述第一多个联网银纳米结构,所述第二光学透明胶层和所述第一多个联网银纳米结构彼此直接接触。5. The touch sensor of claim 4, wherein the second optically clear adhesive layer is compatible with the first plurality of interconnected silver nanostructures, the second optically clear adhesive layer and the first plurality of interconnected silver nanostructures. The mesh silver nanostructures are in direct contact with each other. 6.根据权利要求5所述的触摸传感器,其中所述第二基础透明导体具有第二基板和第二多个联网银纳米结构。6. The touch sensor of claim 5, wherein the second base transparent conductor has a second substrate and a second plurality of networked silver nanostructures. 7.根据权利要求6所述的触摸传感器,其中所述第一多个联网银纳米结构或所述第二多个联网银纳米结构包括银纳米线。7. The touch sensor of claim 6, wherein the first plurality of networked silver nanostructures or the second plurality of networked silver nanostructures comprise silver nanowires. 8.根据权利要求7所述的触摸传感器,其中所述银纳米线具有在10至100,000范围内的长宽比。8. The touch sensor of claim 7, wherein the silver nanowires have an aspect ratio in the range of 10 to 100,000. 9.根据权利要求1所述的触摸传感器,其中所述第一多个联网银纳米结构的透光性(T%)至少是50%,至少是60%,至少是70%,至少是80%,至少是91%到92%,或者至少是95%。9. The touch sensor of claim 1, wherein the light transmittance (T%) of the first plurality of networked silver nanostructures is at least 50%, at least 60%, at least 70%, at least 80% , at least 91% to 92%, or at least 95%. 10.根据权利要求1所述的触摸传感器,其中所述第一多个联网银纳米结构的雾度不超过10%,不超过8%,不超过5%,不超过2%,不超过1%,不超过0.5%,或者不超过0.25%。10. The touch sensor of claim 1, wherein the haze of the first plurality of networked silver nanostructures is no more than 10%, no more than 8%, no more than 5%, no more than 2%, no more than 1% , not more than 0.5%, or not more than 0.25%.
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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105408095A (en) * 2013-06-24 2016-03-16 哈佛学院院长等 Printed three-dimensional (3D) functional part and method of making
US9759846B2 (en) * 2013-09-27 2017-09-12 Cam Holding Corporation Silver nanostructure-based optical stacks and touch sensors with UV protection
TWI567600B (en) * 2013-11-26 2017-01-21 恆顥科技股份有限公司 Touch apparatus
US9715312B2 (en) * 2015-09-21 2017-07-25 Synaptics Incorporated Input device having anti-static layer bypass
US10088931B2 (en) * 2015-11-16 2018-10-02 Samsung Electronics Co., Ltd. Silver nanowires, production methods thereof, conductors and electronic devices including the same
KR102536878B1 (en) * 2016-01-26 2023-05-26 삼성디스플레이 주식회사 Touch panel and display apparatus including the same
US10198040B2 (en) * 2016-05-20 2019-02-05 Apple Inc. Electronic devices with flexible displays
EP3526801B1 (en) 2016-10-14 2022-12-07 C3Nano Inc. Stabilized sparse metal conductive films and solutions for delivery of stabilizing compounds
US11643494B2 (en) 2018-07-12 2023-05-09 3M Innovative Properties Company Composition comprising styrene isobutylene block copolymer and ethylenically unsaturated monomer
US11003289B1 (en) 2018-09-24 2021-05-11 Apple Inc. Flexible touch sensor panel
US10754440B2 (en) * 2018-09-28 2020-08-25 Apple Inc. Touch sensitive keyboard with flexible interconnections
TWI746974B (en) 2019-05-09 2021-11-21 國立清華大學 Thermoelectric nanosensor, manufacturing method and application method thereof
CN110098245A (en) * 2019-05-23 2019-08-06 京东方科技集团股份有限公司 A kind of display base plate and preparation method, display device
EP4062429A4 (en) 2019-11-18 2024-02-14 C3Nano Inc. COATINGS AND PROCESSING OF TRANSPARENT CONDUCTIVE FILMS FOR STABILIZING THIN METALLIC CONDUCTIVE LAYERS
CN113325964B (en) * 2020-02-28 2025-04-04 宸美(厦门)光电有限公司 Touch panel, method for manufacturing touch panel and device thereof
CN113778251A (en) * 2020-06-10 2021-12-10 天材创新材料科技(厦门)有限公司 Transparent conductive laminated structure and touch panel
JPWO2022210585A1 (en) 2021-03-29 2022-10-06
CN113219565B (en) * 2021-04-30 2022-03-18 中国建筑材料科学研究总院有限公司 Stray light eliminating window element and preparation method and application thereof
US11946802B2 (en) * 2022-08-11 2024-04-02 Visera Technologies Company Limited Ambient light sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013047556A1 (en) * 2011-09-30 2013-04-04 富士フイルム株式会社 Touch panel and method for producing touch panel
WO2013067418A1 (en) * 2011-11-04 2013-05-10 Cambrios Technologies Corporation Methods for reducing diffuse reflection of nanostructure-based transparent conductive films and touch panels made of the same
CN103176643A (en) * 2011-12-26 2013-06-26 瀚宇彩晶股份有限公司 Touch device and manufacturing method thereof

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7261839B2 (en) 2002-01-22 2007-08-28 Northern Technologies International Corp. Tarnish inhibiting composition and article containing it
US7585349B2 (en) * 2002-12-09 2009-09-08 The University Of Washington Methods of nanostructure formation and shape selection
US6975067B2 (en) 2002-12-19 2005-12-13 3M Innovative Properties Company Organic electroluminescent device and encapsulation method
TWI403761B (en) * 2005-02-15 2013-08-01 Fujifilm Corp Process of producing light transmittancy electroconductibility film
ATE532217T1 (en) 2005-08-12 2011-11-15 Cambrios Technologies Corp METHOD FOR PRODUCING TRANSPARENT NANOWIRE-BASED CONDUCTORS
TWI397446B (en) 2006-06-21 2013-06-01 Cambrios Technologies Corp Methods of controlling nanostructure formations and shapes
TWI426531B (en) 2006-10-12 2014-02-11 坎畢歐科技公司 Transparent conductor based on nanowire and its application
SG188159A1 (en) 2008-02-26 2013-03-28 Cambrios Technologies Corp Methods and compositions for ink jet deposition of conductive features
US9574272B2 (en) 2008-09-02 2017-02-21 Ramot At Tel-Aviv University Ltd Metal nanowire thin-films
JP4513921B2 (en) * 2008-12-09 2010-07-28 ソニー株式会社 Optical body and manufacturing method thereof, window material, blind, roll curtain, and shoji
JP2012520374A (en) 2009-03-13 2012-09-06 グリーン・ソース・エナジー・リミテッド・ライアビリティ・カンパニー Hydrocarbon extraction from hydrocarbon-containing materials and / or treatment of hydrocarbon-containing materials
US20110024159A1 (en) 2009-05-05 2011-02-03 Cambrios Technologies Corporation Reliable and durable conductive films comprising metal nanostructures
TWI543873B (en) 2009-08-24 2016-08-01 坎畢歐科技公司 Purification of metal nanostructures for improved haze in transparent conductors made from the same
EP2470318A2 (en) 2009-08-25 2012-07-04 Cambrios Technologies Corporation Methods for controlling metal nanostructures morphology
JP2011150316A (en) 2009-12-21 2011-08-04 Konica Minolta Opto Inc Film mirror for solar thermal power generation, method for manufacturing the same, and reflecting device for solar thermal power generation
KR101904912B1 (en) 2010-01-15 2018-10-08 씨에이엠 홀딩 코포레이션 Low-haze transparent conductor
US20110214925A1 (en) * 2010-03-02 2011-09-08 Chao Kuo Hsieh Touch Sensor Device
KR20130038812A (en) 2010-03-19 2013-04-18 케어스트림 헬스 인코포레이티드 Anti-corrosion agents for transparent conductive film
JP2012230881A (en) * 2010-06-24 2012-11-22 Fujifilm Corp Conductive film, touch panel and solar cell
US8664533B2 (en) 2010-07-05 2014-03-04 Dic Corporation Substrate having transparent conductive layer, method for producing same, transparent conductive film laminate for touch panel, and touch panel
US20120104374A1 (en) 2010-11-03 2012-05-03 Cambrios Technologies Corporation Coating compositions for forming nanocomposite films
JP2012133673A (en) 2010-12-22 2012-07-12 Shin Etsu Polymer Co Ltd Capacitive sensor sheet
JP2012216535A (en) * 2011-03-31 2012-11-08 Mitsubishi Chemicals Corp Transparent conductive film containing metal nanowire and coating liquid thereof
JP2012251030A (en) * 2011-06-01 2012-12-20 Toray Advanced Film Co Ltd Adhesive sheet, electrostatic capacity-type touch panel with surface protective layer, and display device
KR101293179B1 (en) 2011-06-13 2013-08-16 엘지이노텍 주식회사 Liquid crystal display combined touch screen
US9573163B2 (en) 2011-07-01 2017-02-21 Cam Holding Corporation Anisotropy reduction in coating of conductive films
JP5925447B2 (en) * 2011-09-02 2016-05-25 日東電工株式会社 Transparent conductive film with pressure-sensitive adhesive layer, method for producing the same, and touch panel
US9568646B2 (en) * 2011-11-04 2017-02-14 Cam Holding Corporation Methods for reducing diffuse reflection of nanostructure-based transparent conductive films and touch panels made of the same
US20130181910A1 (en) * 2012-01-17 2013-07-18 Esat Yilmaz Dual-Substrate-Sensor Stack
JP5775494B2 (en) * 2012-02-28 2015-09-09 富士フイルム株式会社 Silver ion diffusion suppression layer forming composition, silver ion diffusion suppression layer film, wiring board, electronic device, conductive film laminate, and touch panel
CN203054799U (en) * 2012-11-09 2013-07-10 东莞市平波电子有限公司 Embedded capacitive screen
KR102025585B1 (en) * 2012-12-12 2019-09-26 엘지디스플레이 주식회사 Light controlling device and manufacturing method thereof
KR20140076459A (en) * 2012-12-12 2014-06-20 엘지디스플레이 주식회사 Light controlling device and manufacturing method thereof
US20140202742A1 (en) * 2013-01-22 2014-07-24 Cambrios Technologies Corporation Two-sided laser patterning on thin film substrates
US10971277B2 (en) 2013-02-15 2021-04-06 Cambrios Film Solutions Corporation Methods to incorporate silver nanowire-based transparent conductors in electronic devices
US9759846B2 (en) * 2013-09-27 2017-09-12 Cam Holding Corporation Silver nanostructure-based optical stacks and touch sensors with UV protection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013047556A1 (en) * 2011-09-30 2013-04-04 富士フイルム株式会社 Touch panel and method for producing touch panel
WO2013067418A1 (en) * 2011-11-04 2013-05-10 Cambrios Technologies Corporation Methods for reducing diffuse reflection of nanostructure-based transparent conductive films and touch panels made of the same
CN103176643A (en) * 2011-12-26 2013-06-26 瀚宇彩晶股份有限公司 Touch device and manufacturing method thereof

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