SG125127A1 - Positive-working photosensitive resin composition,method for producing pattern-formed resin film, s emiconductor device, display device, and method for producing the semiconductor device and the display device - Google Patents

Positive-working photosensitive resin composition,method for producing pattern-formed resin film, s emiconductor device, display device, and method for producing the semiconductor device and the display device

Info

Publication number
SG125127A1
SG125127A1 SG200403853A SG200403853A SG125127A1 SG 125127 A1 SG125127 A1 SG 125127A1 SG 200403853 A SG200403853 A SG 200403853A SG 200403853 A SG200403853 A SG 200403853A SG 125127 A1 SG125127 A1 SG 125127A1
Authority
SG
Singapore
Prior art keywords
display device
producing
semiconductor device
positive
composition
Prior art date
Application number
SG200403853A
Other languages
English (en)
Inventor
Toshio Banba
Takuji Ikeda
Tatsuya Yano
Takashi Hirano
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of SG125127A1 publication Critical patent/SG125127A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0223—Iminoquinonediazides; Para-quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200403853A 2003-06-23 2004-06-18 Positive-working photosensitive resin composition,method for producing pattern-formed resin film, s emiconductor device, display device, and method for producing the semiconductor device and the display device SG125127A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003178408 2003-06-23
JP2003367316 2003-10-28

Publications (1)

Publication Number Publication Date
SG125127A1 true SG125127A1 (en) 2006-09-29

Family

ID=33422186

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200403853A SG125127A1 (en) 2003-06-23 2004-06-18 Positive-working photosensitive resin composition,method for producing pattern-formed resin film, s emiconductor device, display device, and method for producing the semiconductor device and the display device

Country Status (6)

Country Link
US (2) US7238455B2 (de)
EP (2) EP1491952B1 (de)
KR (2) KR101059137B1 (de)
CN (1) CN1573546B (de)
SG (1) SG125127A1 (de)
TW (1) TWI308992B (de)

Families Citing this family (25)

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EP2077291B1 (de) * 2006-10-24 2013-01-09 Sumitomo Bakelite Company, Ltd. Bis(aminophenol)-derivat, herstellungsverfahren dafür, polyamidharz, positiv arbeitende lichtempfindliche harzzusammensetzungen, schutzfilm, zwischenschichtdielektrikum, halbleitervorrichtung und anzeigeelement
MY148226A (en) * 2006-11-15 2013-03-29 Sumitomo Bakelite Co Photosensitive resin composition, insulating film, protective film, and electronic equipment
JP4245074B1 (ja) * 2008-01-11 2009-03-25 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜およびそれを用いた半導体装置、表示体装置。
KR100914064B1 (ko) * 2008-03-19 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
JP5246607B2 (ja) * 2008-05-07 2013-07-24 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、保護膜及び絶縁膜、並びにそれを用いた半導体装置及び表示体装置
JP5185999B2 (ja) * 2008-05-29 2013-04-17 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
EP2309329B1 (de) * 2008-07-22 2014-04-02 Sumitomo Bakelite Co., Ltd. Positive lichtempfindliche harzzusammensetzung, gehärteter film und deren anwendung als schutzfilm, isolierfilm sowie deren anwendung in einem halbleiterbauelement und in einer anzeigevorrichtung
MY156318A (en) 2008-10-20 2016-02-15 Sumitomo Bakelite Co Positive photosensitive resin composition for spray coating and method for producing through electrode using the same
KR101225957B1 (ko) * 2009-04-03 2013-01-24 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101247624B1 (ko) * 2009-04-08 2013-03-29 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101200140B1 (ko) * 2009-08-31 2012-11-12 금호석유화학 주식회사 포지티브형 감광성 조성물
KR101333698B1 (ko) * 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR20130035779A (ko) * 2011-09-30 2013-04-09 코오롱인더스트리 주식회사 포지티브형 감광성 수지 조성물，이로부터 형성된 절연막 및 유기발광소자
KR101432603B1 (ko) * 2011-12-29 2014-08-21 제일모직주식회사 감광성 노볼락 수지, 이를 포함하는 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 이를 포함하는 반도체 소자
KR101636861B1 (ko) 2012-12-28 2016-07-06 제일모직 주식회사 표시장치 절연막용 감광성 수지 조성물, 및 이를 이용한 표시장치 절연막 및 표시장치
EP2840123B1 (de) * 2013-08-23 2018-04-18 Ewald Dörken Ag Verwendung eines quellschweissmittels
WO2016056451A1 (ja) * 2014-10-06 2016-04-14 東レ株式会社 樹脂組成物、耐熱性樹脂膜の製造方法、および表示装置
TWI735422B (zh) * 2015-01-23 2021-08-11 日商艾曲迪微系統股份有限公司 正型感光性樹脂組成物、圖案硬化膜的製造方法、圖案硬化膜及電子零件
JP2017173741A (ja) * 2016-03-25 2017-09-28 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 感光性シロキサン組成物
CN109563353B (zh) 2016-07-27 2022-01-14 东丽株式会社 树脂组合物
KR102739766B1 (ko) 2018-09-28 2024-12-06 삼성디스플레이 주식회사 감광성 수지 조성물 및 이를 포함하는 표시 장치
JP7001147B2 (ja) * 2018-10-18 2022-01-19 住友ベークライト株式会社 感光性樹脂組成物、硬化膜、及び、硬化膜を備える電子装置及びその製造方法
CN113075862A (zh) * 2021-03-03 2021-07-06 长春人造树脂厂股份有限公司 抗蚀刻组合物

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JPH11312675A (ja) * 1998-04-27 1999-11-09 Sumitomo Bakelite Co Ltd 半導体装置及びその製造方法
US6576381B1 (en) * 1999-02-26 2003-06-10 Sumitomo Bakelite Co., Ltd. Semiconductor device
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JP2002202593A (ja) * 2000-10-31 2002-07-19 Sumitomo Bakelite Co Ltd ポジ型感光性樹脂組成物、ポジ型感光性樹脂組成物の製造方法及び半導体装置
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Also Published As

Publication number Publication date
KR20050000351A (ko) 2005-01-03
EP1491952B1 (de) 2015-10-07
US20050266334A1 (en) 2005-12-01
KR20110027740A (ko) 2011-03-16
US7361445B2 (en) 2008-04-22
EP2381308A2 (de) 2011-10-26
EP2381308B1 (de) 2015-07-29
TW200502688A (en) 2005-01-16
KR101059137B1 (ko) 2011-08-25
EP1491952A3 (de) 2007-07-25
CN1573546A (zh) 2005-02-02
TWI308992B (en) 2009-04-21
US20040259020A1 (en) 2004-12-23
KR101072953B1 (ko) 2011-10-17
EP1491952A2 (de) 2004-12-29
CN1573546B (zh) 2010-06-23
US7238455B2 (en) 2007-07-03
EP2381308A3 (de) 2012-03-21

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