KR100485169B1 - Method of polishing semiconductor device - Google Patents
Method of polishing semiconductor device Download PDFInfo
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- KR100485169B1 KR100485169B1 KR10-2002-0061433A KR20020061433A KR100485169B1 KR 100485169 B1 KR100485169 B1 KR 100485169B1 KR 20020061433 A KR20020061433 A KR 20020061433A KR 100485169 B1 KR100485169 B1 KR 100485169B1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
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Abstract
본 발명의 연마공정에서 불필요한 단계를 없앰으로써 비용을 절감할 수 있고, 나아가 세척공정을 최적화할 수 있는 반도체 웨이퍼의 연마방법을 제공하는 것으로, 이에 따른 연마방법은, 케미칼 슬러리를 연마패드의 표면에 공급하고 반도체 웨이퍼의 연마면을 연마패드에 밀착시켜 연마가 이루어지는 메인 연마단계; 상기 메인 연마단계 이후에 상기 연마패드의 표면에 암모니아 용액을 공급하면서 상기 반도체 웨이퍼의 연마면을 상기 연마패드에 밀착시킨 상태에서 연마를 하는 암모니아를 이용한 연마단계; 및 상기 암모니아를 이용한 연마단계 이후에, 불산 및 스핀 린스 건조과정을 거쳐 반도체 웨이퍼를 세척하는 세척단계를 포함한다.By eliminating unnecessary steps in the polishing process of the present invention, a method of polishing a semiconductor wafer capable of reducing costs and further optimizing a cleaning process is provided. The polishing method includes applying a chemical slurry to a surface of a polishing pad. A main polishing step of supplying and polishing the polishing surface of the semiconductor wafer against the polishing pad; A polishing step using ammonia for polishing while the polishing surface of the semiconductor wafer is brought into close contact with the polishing pad while supplying an ammonia solution to the surface of the polishing pad after the main polishing step; And a cleaning step of cleaning the semiconductor wafer after hydrofluoric acid and spin rinse drying after the polishing step using ammonia.
Description
본 발명은 반도체 소자의 제조방법에 관한 것으로, 좀 더 상세하게는 반도체 웨이퍼의 연마방법에 관한 것이다.The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of polishing a semiconductor wafer.
반도체소자가 고집적화됨에 따라 사진공정의 마진을 확보하고 배선길이를 최소화하기 위해 하부구조물을 평탄화시키는 기술이 요구된다. 하부구조물을 평탄화시키는 방법으로는, BPSG(borophosphosilicate glass) 리플로우(reflow), 알루미늄리플로우, 스핀온글라스(spin on glass; SOG) 에치백(etch back), 및 CMP 공정 등이 있다.As semiconductor devices have been highly integrated, a technology for planarizing a lower structure is required to secure a margin of a photographic process and minimize wiring length. Methods of planarizing the substructure include borophosphosilicate glass (BPSG) reflow, aluminum reflow, spin on glass (SOG) etch back, and CMP processes.
이 중, CMP 공정은 다수의 웨이퍼를 동시에 효율적으로 평탄화시킬 수 있는 방법으로서, 웨이퍼와 폴리싱 패드(polishingpad) 사이에 슬러리(slurry)를 투입하여 웨이퍼를 연마하는 것을 특징으로 하며, 이 방법은 리플로우 공정이나 에치백 공정으로 달성할 수 없는 넓은 공간영역의 글로벌 평탄화 및 저온 평탄화 공정을 달성할 수 있어 차세대 소자에서 유력한 평탄화 기술로 대두되고 있다.Among these, the CMP process is a method that can efficiently planarize a plurality of wafers at the same time, characterized in that the wafer is polished by inserting a slurry between the wafer and the polishing pad, and the method reflows. The global planarization and low temperature planarization process of a large space area which cannot be achieved by the process or the etch back process can be achieved, making it a prominent planarization technology in the next generation devices.
CMP 공정은, 기존의 열산화에 의한 소자분리방법 대신 트랜치 소자분리 방법에서 트랜치 식각후 절연막을 채워넣고 평탄화를 달성하는 경우에 사용되거나, 라인 ＆ 스페이스 형성시 역 패턴을 형성하고 전도성 물질을 채워넣은 다음 평탄화 및 라인을 분리시키는 다마신(damascene) 공정에 사용되거나, 층간절연막의 평탄화 공정에 적용하여 평탄화와 동시에 열예산(heat budget)을 감소시킬 수 있다.The CMP process is used to fill the insulating film after trench etching and planarization in the trench device isolation method instead of the conventional device for thermal oxidation, or to form an inverse pattern and form a conductive material when forming lines and spaces. Next, it may be used in a damascene process that separates the planarization and the line, or may be applied to the planarization process of the interlayer insulating film to reduce the heat budget at the same time as the planarization.
이러한 CMP 공정은 도 1에 도시한 바와 같이, 울퉁불퉁한 표면을 제거하는 메인 연마공정(1), 표면의 파티클을 제거하는 후속 연마공정(3)에 이어, 암모니아(NH4OH) 세척(5), 불산(HF) 세척(7), 린스 및 건조(9) 등으로 이루어진다.This CMP process is shown in Figure 1, followed by a main polishing process (1) to remove uneven surfaces, subsequent polishing process (3) to remove particles from the surface, followed by ammonia (NH 4 OH) washing (5). , Hydrofluoric acid (HF) wash (7), rinse and dry (9) and the like.
여기서 메인 연마공정(1)과 후속 연마공정(3)은 연마라인에서 이루어지고, 그 이후 공정은 세척라인에서 이루어진다.The main polishing process 1 and the subsequent polishing process 3 take place in the polishing line, after which the process takes place in the washing line.
세척라인은 연마라인을 거치면서 반도체 웨이퍼의 표면에 잔존하는 많은 양의 파티클을 제거하기 위한 것으로, 반도체 웨이퍼의 양면으로 세척액을 흘려주면서 PVA 재질의 양면 브러쉬를 이용하여 세척하게 된다.The cleaning line is used to remove a large amount of particles remaining on the surface of the semiconductor wafer while passing through the polishing line. The cleaning line is washed by using a double-sided brush made of PVA while flowing the cleaning liquid to both sides of the semiconductor wafer.
따라서 연마라인에 이어 세척라인이 실시되기 때문에 점차 후속 연마공정의 필요성이 없어지고 있는 추세이지만, 암모니아의 세척만 가지고는 연마 후 반도체 웨이퍼 표면에 잔존하는 무수한 파티클의 제거하기가 용이하지 않기 때문에 암모니아 용액의 내부에 H2O2를 포함시켜 사용하거나, 초음파를 이용한 세정 및 계면활성제를 사용하고 있다.Therefore, since the cleaning line is performed after the polishing line, the necessity of the subsequent polishing process is gradually eliminated. However, the ammonia solution is not easy to remove the myriad particles remaining on the surface of the semiconductor wafer after polishing only by cleaning the ammonia. H 2 O 2 is used in the interior of the mixture, or washing with ultrasonic waves and a surfactant are used.
그러나 H2O2의 사용시 연마공정 후 웨이퍼 플러그의 부식문제, 초음파 사용으로 인한 필름의 들뜸문제 및 계면활성제의 사용으로 인한 케미칼 레지듀(chemical residue)의 새로운 문제들이 발생하게 된다.However, the use of H 2 O 2 leads to the problem of corrosion of the wafer plug after polishing, the lifting of the film due to the use of ultrasonic waves and new problems of chemical residues due to the use of surfactants.
본 발명은 이와 같은 종래 기술의 문제점을 해결하기 위해 제안된 것으로, 연마공정에서 불필요한 단계를 없앰으로써 비용을 절감할 수 있고, 나아가 세척공정을 최적화할 수 있는 반도체 웨이퍼의 연마방법을 제공하는 데 있다.The present invention has been proposed to solve the problems of the prior art, and to provide a method of polishing a semiconductor wafer that can reduce costs by optimizing the cleaning process by eliminating unnecessary steps in the polishing process. .
상술한 목적을 달성하기 위한 본 발명의 연마방법은, 케미칼 슬러리를 연마패드의 표면에 공급하고 반도체 웨이퍼의 연마면을 연마패드에 밀착시켜 연마가 이루어지는 메인 연마단계; 상기 메인 연마단계 이후에 상기 연마패드의 표면에 암모니아 용액을 공급하면서 상기 반도체 웨이퍼의 연마면을 상기 연마패드에 밀착시킨 상태에서 연마를 하는 암모니아를 이용한 연마단계; 및 상기 암모니아를 이용한 연마단계 이후에, 불산 및 스핀 린스 건조과정을 거쳐 반도체 웨이퍼를 세척하는 세척단계를 포함한다.The polishing method of the present invention for achieving the above object, the main polishing step of supplying a chemical slurry to the surface of the polishing pad and polishing the polishing surface of the semiconductor wafer in close contact with the polishing pad; A polishing step using ammonia for polishing while the polishing surface of the semiconductor wafer is brought into close contact with the polishing pad while supplying an ammonia solution to the surface of the polishing pad after the main polishing step; And a cleaning step of cleaning the semiconductor wafer after hydrofluoric acid and spin rinse drying after the polishing step using ammonia.
이하 본 발명에 따른 바람직한 일 실시예를 첨부된 도면에 의거하여 상세히 설명한다.Hereinafter, a preferred embodiment according to the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 반도체 웨이퍼의 연마방법을 설명하기 위한 개요도이다.2 is a schematic view for explaining a method of polishing a semiconductor wafer according to the present invention.
본 발명의 연마방법은 크게 메인 연마단계와, 암모니아를 이용한 연마단계로 구분되며, 이러한 연마후에 세척단계를 거치게 된다.The polishing method of the present invention is largely divided into a main polishing step and a polishing step using ammonia, and after this polishing, a washing step is performed.
메인 연마단계(11)는 종래와 동일하게 이루어지는 연마로서, 케미칼 슬러리를 연마패드의 표면에 공급하면서 동시에 연마를 실시하는 것이다.The main polishing step 11 is polishing performed in the same manner as in the prior art, and is performed while simultaneously supplying the chemical slurry to the surface of the polishing pad.
즉, 연마를 실시할 반도체 웨이퍼를 연마헤드에 장착한 상태에서 연마가 이루어질 연마면이 하방을 향하게 하고, 그 하방에 회전플레이트에 설치된 연마패드를 배치하며, 연마헤드와 회전플레이트를 각각의 모터로 회전하면서 반도체 웨이퍼의 연마면을 연마패드에 밀착시켜 연마가 이루어지도록 한다. 이때 연마패드의 표면에 케미칼 슬러리를 공급한다.That is, with the semiconductor wafer to be polished mounted on the polishing head, the polishing surface on which polishing is to be made is directed downward, and the polishing pad provided on the rotating plate is disposed below the polishing head, and the polishing head and the rotating plate are moved to each motor. While rotating, the polishing surface of the semiconductor wafer is brought into close contact with the polishing pad to perform polishing. At this time, the chemical slurry is supplied to the surface of the polishing pad.
이러한 메인 연마단계 이후에, 실시되는 암모니아를 이용한 연마단계(13)는 상기한 연마패드의 인접한 위치에 동일한 형태로 설치된 연마패드의 표면으로 암모니아 용액을 공급하고 연마를 실시한다. 이때의 기계적 작동은 상술한 메인 연마단계(11)에서와 동일하므로 생략하기로 한다.After this main polishing step, the polishing step 13 using ammonia to be carried out supplies the ammonia solution to the surface of the polishing pad installed in the same shape at the adjacent position of the polishing pad and performs polishing. The mechanical operation at this time is the same as in the above-described main polishing step 11 will be omitted.
사용되는 암모니아 용액은 원액의 암모니아를 순수와 혼합하여 2%의 암모니아 용액으로 만들어 사용하하며, 실제 공정에 적용시에는 유량비(flow rate)은 290ml/min 내지 310ml/min 정도이다.The ammonia solution used is mixed with pure water ammonia to make a 2% ammonia solution, and when applied to the actual process flow rate (flow rate) is about 290ml / min to 310ml / min.
이와 같이 암모니아를 공급하면서 연마가 실시되면, 종래 후속 연마시 순수를 투입하여 연마를 실시하고 다시 세척단계에서 암모니아 용액에 반도체 웨이퍼를 침전시켜 세척을 실시하는 것보다는 한 단계를 줄어든 공정을 실시하면서도 동일한 또는 그 이상의 뛰어난 연마효과를 얻게 된다.When the polishing is performed while supplying ammonia as described above, the polishing is performed by adding pure water during subsequent polishing, and the same process is performed while reducing the process by one step rather than precipitating and cleaning the semiconductor wafer in the ammonia solution in the washing step. Or more excellent polishing effect is obtained.
좀 더 상세히 설명하면, 연마패드의 표면과 반도체 웨이퍼의 연마면 사이에 암모니아 용액에 의한 압박층이 형성된 상태에서 연마가 이루어지기 때문에 분산되어 있던 파티클을 응집시켜 파티클의 효과적인 제거가 가능하게 된다.In more detail, the polishing is performed in a state in which a pressing layer made of an ammonia solution is formed between the surface of the polishing pad and the polishing surface of the semiconductor wafer so that the dispersed particles are aggregated to effectively remove the particles.
이어서 실시되는 세척단계(15)는 불산을 이용한 세척과정(15a)과 스핀 린스 건조과정(15b)을 거치게 된다.Subsequently, the washing step 15 is performed through a washing process 15a and a spin rinse drying process 15b using hydrofluoric acid.
이러한 세척단계는 통상의 반도체를 제조하는 과정에서 사용되는 공정이므로 상세한 설명은 생략하기로 한다.Since this washing step is a process used in the process of manufacturing a conventional semiconductor, a detailed description thereof will be omitted.
이상에서 살펴본 바와 같이 본 발명에 의하면, 후속 연마공정에서 암모니아 용액을 투입하면서 연마를 실시하기 때문에 종래 순수를 투입하여 연마한 후에 암모니아를 이용하여 세척하던 이중의 작업을 하나의 작업보다 비용을 절감하게 되어 공정단가를 크게 낮출 수 있게 된다.As described above, according to the present invention, since the polishing is carried out by adding ammonia solution in a subsequent polishing process, the double work that is conventionally washed with ammonia after being added with pure water can be reduced in cost than a single work. As a result, the process cost can be greatly reduced.
또한 연마패드의 표면과 반도체 웨이퍼의 연마면 사이에 암모니아 용액에 의한 압박층이 형성된 상태에서 연마가 이루어지기 때문에 분산되어 있던 파티클을 응집시켜 파티클의 효과적인 제거와 세척 효과를 크게 향상시키는 것이 가능하게 된다.In addition, since the polishing is performed in the state where the pressing layer of the ammonia solution is formed between the surface of the polishing pad and the polishing surface of the semiconductor wafer, it becomes possible to agglomerate the dispersed particles and greatly improve the effective removal and cleaning effect of the particles. .
도 1은 종래 반도체 웨이퍼의 연마공정과 세척공정을 설명하기 위한 개요도이고,1 is a schematic view for explaining a polishing process and a cleaning process of a conventional semiconductor wafer,
도 2는 본 발명에 따른 반도체 웨이퍼의 연마방법을 설명하기 위한 개요도이다.2 is a schematic view for explaining a method of polishing a semiconductor wafer according to the present invention.
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| JPH06342839A (en) * | 1993-05-31 | 1994-12-13 | Shin Etsu Handotai Co Ltd | Method of inspecting layer feebly modified by treatment on surface of silicon wafer, and method of measuring its thickness |
| JPH09205072A (en) * | 1996-01-26 | 1997-08-05 | Sony Corp | Method for forming SOI substrate |
| KR20000004750A (en) * | 1998-06-30 | 2000-01-25 | 김영환 | Cleaning method of an wafer |
| US20010016469A1 (en) * | 1998-11-10 | 2001-08-23 | Dinesh Chopra | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| JP2000188292A (en) * | 1998-12-21 | 2000-07-04 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
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