JPS55141570A - Dry etching apparatus - Google Patents

Dry etching apparatus

Info

Publication number
JPS55141570A
JPS55141570A JP4774679A JP4774679A JPS55141570A JP S55141570 A JPS55141570 A JP S55141570A JP 4774679 A JP4774679 A JP 4774679A JP 4774679 A JP4774679 A JP 4774679A JP S55141570 A JPS55141570 A JP S55141570A
Authority
JP
Japan
Prior art keywords
etching
high vacuum
chamber
vacuum chamber
separating valves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4774679A
Other languages
Japanese (ja)
Other versions
JPS618153B2 (en
Inventor
Katsuzo Ukai
Hideo Uchikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP4774679A priority Critical patent/JPS55141570A/en
Publication of JPS55141570A publication Critical patent/JPS55141570A/en
Publication of JPS618153B2 publication Critical patent/JPS618153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the yield of etching, by arranging one substrate respectively to each of plural etching chambers, which are partitioned by separating valves from a high vacuum chamber, of a dry etching apparatus in order to etch the substrate, thereby eliminating deficient or surplus etching. CONSTITUTION:Plural dry etching chambers 30, 40, 50, 60 are connected through respective separating valves 33, 43, 53, 63 to a high vacuum chamber 10. The high vacuum chamber 10 is connected to a diffusion pump 11 through a valve 12, and to preliminary chamber 20 through a valve 23. When substrates 32, 42, 52, 62 arranged on planar electrodes 31, 41, 51, 61 are dry etched, the high vacuum chamber 10 and the preliminary chamber 20 are prevented from polution with gas flowing out of each etching chamber by closing the separating valves 33, 43, 53, 63. Upon completion of the etching, remaining gas is discharged, and the etching chambers are maintained at high vacuum by opening the separating valves once again, thereby increasing the reproducibility of the etching, and reducing the time required for etching the substrates.
JP4774679A 1979-04-18 1979-04-18 Dry etching apparatus Granted JPS55141570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4774679A JPS55141570A (en) 1979-04-18 1979-04-18 Dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4774679A JPS55141570A (en) 1979-04-18 1979-04-18 Dry etching apparatus

Publications (2)

Publication Number Publication Date
JPS55141570A true JPS55141570A (en) 1980-11-05
JPS618153B2 JPS618153B2 (en) 1986-03-12

Family

ID=12783906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4774679A Granted JPS55141570A (en) 1979-04-18 1979-04-18 Dry etching apparatus

Country Status (1)

Country Link
JP (1) JPS55141570A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197280A (en) * 1982-05-11 1983-11-16 Matsushita Electric Ind Co Ltd dry etching equipment
JPS60115216A (en) * 1983-11-28 1985-06-21 Hitachi Ltd Vacuum processing apparatus
JPS60227437A (en) * 1983-09-28 1985-11-12 Yokogawa Hewlett Packard Ltd Interface for treating integrated circuit
JPS6195887A (en) * 1984-10-16 1986-05-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Transporter in vacuum
JPS61133388A (en) * 1984-11-30 1986-06-20 Tokuda Seisakusho Ltd Dry etching device
JPS6332931A (en) * 1986-04-18 1988-02-12 ジエネラル・シグナル・コ−ポレ−シヨン Plasma etching system
JPS63133532A (en) * 1986-10-24 1988-06-06 ゼネラル　シグナル　コーポレーション Quadruple treatment processor
JPH022605A (en) * 1987-12-23 1990-01-08 Texas Instr Inc <Ti> Automated photolithographic work cell
US5076205A (en) * 1989-01-06 1991-12-31 General Signal Corporation Modular vapor processor system
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
JPH08195348A (en) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPH08213373A (en) * 1995-10-27 1996-08-20 Hitachi Ltd Plasma processing method and apparatus
JPH08241867A (en) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd Plasma treatment device and plasma treatment method
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
US6526330B2 (en) 1995-07-19 2003-02-25 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US7132293B2 (en) 1989-02-27 2006-11-07 Hitachi, Ltd. Method and apparatus for processing samples

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197280A (en) * 1982-05-11 1983-11-16 Matsushita Electric Ind Co Ltd dry etching equipment
JPS60227437A (en) * 1983-09-28 1985-11-12 Yokogawa Hewlett Packard Ltd Interface for treating integrated circuit
JPS60115216A (en) * 1983-11-28 1985-06-21 Hitachi Ltd Vacuum processing apparatus
JPS6195887A (en) * 1984-10-16 1986-05-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Transporter in vacuum
JPS61133388A (en) * 1984-11-30 1986-06-20 Tokuda Seisakusho Ltd Dry etching device
JPH07183282A (en) * 1986-04-18 1995-07-21 General Signal Corp Plasma etching equipment
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
US5344542A (en) * 1986-04-18 1994-09-06 General Signal Corporation Multiple-processing and contamination-free plasma etching system
JPS6332931A (en) * 1986-04-18 1988-02-12 ジエネラル・シグナル・コ−ポレ−シヨン Plasma etching system
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
JPS63133532A (en) * 1986-10-24 1988-06-06 ゼネラル　シグナル　コーポレーション Quadruple treatment processor
JPH022605A (en) * 1987-12-23 1990-01-08 Texas Instr Inc <Ti> Automated photolithographic work cell
US5076205A (en) * 1989-01-06 1991-12-31 General Signal Corporation Modular vapor processor system
US7132293B2 (en) 1989-02-27 2006-11-07 Hitachi, Ltd. Method and apparatus for processing samples
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5883017A (en) * 1994-08-23 1999-03-16 Applied Materials, Inc. Compartmentalized substrate processing chamber
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US6752580B2 (en) 1995-07-19 2004-06-22 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US6526330B2 (en) 1995-07-19 2003-02-25 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US6752579B2 (en) 1995-07-19 2004-06-22 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
EP0756316B1 (en) * 1995-07-19 2004-09-29 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US6895685B2 (en) 1995-07-19 2005-05-24 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US6962472B2 (en) 1995-07-19 2005-11-08 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US7201551B2 (en) 1995-07-19 2007-04-10 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US7347656B2 (en) 1995-07-19 2008-03-25 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
JPH08195348A (en) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPH08213373A (en) * 1995-10-27 1996-08-20 Hitachi Ltd Plasma processing method and apparatus
JPH08241867A (en) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd Plasma treatment device and plasma treatment method

Also Published As

Publication number Publication date
JPS618153B2 (en) 1986-03-12

Similar Documents

Publication Publication Date Title
JPS55141570A (en) Dry etching apparatus
DK151496C (en) EJECTOR PUMP FOR PRODUCING VACUUM
JPS56158873A (en) Dry etching method
ES8708093A1 (en) Vertical apparatus for continuous deposition of semiconductor alloys.
JPS54153740A (en) Continuous vacuum treatment apparatus
EP0266604A3 (en) Anode plate for a parallel-plate reactive ion etching reactor
JPS5737821A (en) Vapor phase reaction device
JPS56278A (en) Method and apparatus for plasma ethcing of aluminum
JPS56146083A (en) Vacuum exhaust system
JPS57202733A (en) Dry etching device
JPH0330326A (en) Semiconductor manufacturing apparatus
JPS57143827A (en) Parallel, flat electrode
JPS56169116A (en) Manufacture of amorphous silicon film
JPS52122284A (en) Sputtering device having bias electrode
JPS5732637A (en) Dry etching apparatus
JPS6456886A (en) Dry etching method
JPS6415953A (en) Dry etching method
JPS5747800A (en) Etching method for crystal substrate
JPS52122283A (en) Sputtering device having bias mechanism
JPS5789217A (en) Manufacturing device of semiconductor
JPS57170536A (en) Dry etching method
JPS5775427A (en) Manufacture of mask for exposure to x-ray
JPS5687671A (en) Dry etching apparatus
JPS55109958A (en) Mass spectrometer
JPS56158874A (en) Plasma etching method