JPS52122284A - Sputtering device having bias electrode - Google Patents
Sputtering device having bias electrodeInfo
- Publication number
- JPS52122284A JPS52122284A JP3827176A JP3827176A JPS52122284A JP S52122284 A JPS52122284 A JP S52122284A JP 3827176 A JP3827176 A JP 3827176A JP 3827176 A JP3827176 A JP 3827176A JP S52122284 A JPS52122284 A JP S52122284A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering device
- bias electrode
- electrode
- substrate
- carrying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:The above-mentioned device for carrying out the formation of thin membrane or the etching, by introducing the gas of low pressure into the vacuum chamber having the opposed (not necessarily parallel) two electrodes (the RF electrode and the substrate) and by carrying out the high frequency glow discharge between the RF electrode and the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3827176A JPS52122284A (en) | 1976-04-07 | 1976-04-07 | Sputtering device having bias electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3827176A JPS52122284A (en) | 1976-04-07 | 1976-04-07 | Sputtering device having bias electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS52122284A true JPS52122284A (en) | 1977-10-14 |
Family
ID=12520642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3827176A Pending JPS52122284A (en) | 1976-04-07 | 1976-04-07 | Sputtering device having bias electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52122284A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538043A (en) * | 1978-09-12 | 1980-03-17 | Fujitsu Ltd | Dry etching device |
| JPS6070170A (en) * | 1983-09-23 | 1985-04-20 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method and device for depositing metal layer |
| JPH01108371A (en) * | 1987-10-20 | 1989-04-25 | Fuji Electric Co Ltd | Thin film forming device |
-
1976
- 1976-04-07 JP JP3827176A patent/JPS52122284A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538043A (en) * | 1978-09-12 | 1980-03-17 | Fujitsu Ltd | Dry etching device |
| JPS6070170A (en) * | 1983-09-23 | 1985-04-20 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method and device for depositing metal layer |
| JPH01108371A (en) * | 1987-10-20 | 1989-04-25 | Fuji Electric Co Ltd | Thin film forming device |
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