JPH09139476A - Ceramic electrode for ferroelectric capacitor - Google Patents

Abstract

(57) Abstract: It is intended to form a ferroelectric capacitor having good characteristics by suppressing the composition deviation of the ferroelectric material and the deterioration of the dielectric characteristics due to the composition deviation. In at least one of an upper electrode layer and a lower electrode layer formed of a conductive ceramic electrode of a ferroelectric capacitor, an element contained in the ferroelectric substance between the electrode layer and the ferroelectric substance of the capacitor. A ceramic electrode of a ferroelectric capacitor in which a layer made of a compound having a good conductivity and having a pyrochlore structure containing at least one element each of which is included in the conductive ceramic electrode and one element is included.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, a DRAM.
(Dynamic Random Access Memory), FR
The present invention relates to a ferroelectric capacitor such as AM (ferroelectric random access memory), particularly a ceramic electrode for a ferroelectric capacitor suitable for application to a ferroelectric memory.

[0002]

2. Description of the Related Art In a conventional semiconductor memory, for example, an FRAM of a ferroelectric non-volatile memory, a ferroelectric capacitor is formed, an induced polarization is generated in the ferroelectric, and information is recorded according to the direction of the polarization. ing.

Ferroelectric materials for such a ferroelectric capacitor include SrTiO ₃ , Ba _x Sr _1-x T.
iO ₃ , PbZr _x Ti _1-x O ₃ , SrBi ₂ Ta ₂ O
Consideration is being made to construct with an oxide such as ₉ .

By the way, in forming these oxide materials,
Although a heat treatment step in an oxidizing atmosphere is required, when a normal metal is used as an electrode material, the surface of the electrode metal is oxidized during the heat treatment of this oxide. As a result, a low dielectric layer or a paraelectric layer is formed between the dielectric film and the electrode material, which deteriorates the device characteristics of the DRAM or FRAM.

Therefore, chemically stable platinum is generally used as an electrode material.

[0006]

However, it is said that platinum is not suitable for high integration of a semiconductor memory because of its poor workability.

Therefore, as an electrode material excellent in workability,
Oxide conductive materials are attracting attention. One of the oxide conductive materials, ReO ₃ , SrRuO ₃ , SrIrO
Oxides having a perovskite structure such as ₃ have been actively studied in recent years because of their metallic electrical conductivity and excellent workability.

However, in the ceramic electrodes made of these oxides having the perovskite structure, the elements such as Pb and Bi contained in the ferroelectric substance are removed by the heat treatment process at a high temperature in the manufacturing process of the ferroelectric thin film. ,
There is a problem that the composition of the ferroelectric substance is deviated due to diffusion into the ceramic electrode.

The deviation of the composition of the ferroelectric material leads to deterioration of the dielectric characteristics of the ferroelectric material and reduction of the resistance, and the characteristics of the ferroelectric capacitor using the same are significantly deteriorated. become.

The present invention is intended to solve the above-mentioned problems by suppressing the composition deviation of the above-mentioned ferroelectric substance.

[0011]

A ceramic electrode for a ferroelectric capacitor according to the present invention is provided with an electrode layer in at least one of an upper electrode layer and a lower electrode layer made of a conductive ceramic electrode of a ferroelectric capacitor. A layer made of a compound having a good conductive pyrochlore structure containing at least one element contained in the ferroelectric substance and one element contained in the conductive ceramic electrode is disposed between the ferroelectric substance of the capacitor. The formed structure.

According to the above-described structure of the present invention, in the ceramic electrode for a ferroelectric capacitor, the good conductivity containing the element contained in the ceramic electrode adjacent to the ferroelectric layer and the element contained in the ferroelectric substance, respectively. By having a layer formed of a compound having a conductive pyrochlore structure, the ceramic electrode and the ferroelectric layer have adhesion strength,
In addition, it is possible to suppress the diffusion of the component element of the ferroelectric substance into the electrode layer in the manufacture of the ferroelectric capacitor.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION A ceramic electrode for a ferroelectric capacitor according to the present invention has a structure in which at least one of an upper electrode layer and a lower electrode layer, which is a conductive ceramic electrode of the ferroelectric capacitor, includes an electrode layer and a capacitor. A layer made of a compound having a good conductive pyrochlore structure containing at least one element contained in the ferroelectric substance and one element contained in the conductive ceramic electrode is disposed between the ferroelectric substance and the ferroelectric substance. It has a different configuration.

FIG. 1 is a schematic block diagram of an example of a ferroelectric capacitor to which the present invention is applied. In the example of FIG. 1, a compound having a pyrochlore structure having good conductivity is arranged and formed in both the upper electrode layer and the lower electrode layer. As shown in FIG. 1, between the ferroelectric layer 2 and the ceramic electrode 3 arranged above and below the ferroelectric layer 2 of the ferroelectric capacitor 1 formed on the electrode forming surface 10, A layer 4 made of a compound having a pyrochlore structure containing at least one element contained in the dielectric and one element contained in the ceramic electrode is arranged and formed.

As the electrode forming surface 10, a silicon layer, a polycrystalline silicon layer, an insulating layer such as SiO ₂ or the like is used.

As a ferroelectric material forming the ferroelectric layer 2,
For example, Pb (Zr, Ti) O _Three(PZT), Pb
TiO_ThreeLead compounds such as BiSr_TwoTa_TwoO₉, B
i_FourTi_ThreeO₁₂Bismuth layered compounds such as
it can.

These ferroelectric layers can be formed by a sol-gel method using alkoxide as a raw material, a laser ablation method (a kind of sputtering method; a method of hitting a laser with a target and skipping). After film formation, heat treatment is performed to stabilize.

As the material of the conductive ceramic electrode 3,
Compounds having a rutile structure such as RuO ₂ , IrO ₂ and OsO ₂ and compounds having a perovskite structure such as ReO ₂ , SrRuO ₂ and SrIrO ₂ can be used. These conductive ceramics can be formed into a film by a sol-gel method or a laser ablation method using alkoxide as a raw material. It is also possible to deposit a metal layer such as Ru and then thermally oxidize it to form a conductive ceramic.

The elements contained in the ferroelectric and the conductivity
Ryoudou, which contains at least one element contained in ceramics
As a material for the compound layer 4 having an electrically conductive pyrochlore structure
Is, for example, Pb in the Pb system_TwoRu_TwoO₇, Pb_Two(Ru
_2-xPb_x) O₇, Pb_TwoIr _TwoO₇Etc. in the Bi system
Bi_TwoRu_TwoO₇, Bi_Two(Ru_2-xBi_x) O₇, B
i_TwoIr_TwoO₇Etc. can be used. And this
Compounds having a pyrochlore type structure are disclosed in
It can be formed into a film by the aeration method or the like.

Further, in another ceramic electrode for a ferroelectric capacitor according to the present invention, the conductive ceramic electrode is strong in at least one of the upper electrode layer and the lower electrode layer made of the conductive ceramic electrode of the ferroelectric capacitor. The compound is composed of a compound having a good conductive pyrochlore structure containing at least one element contained in the dielectric.

Next, an embodiment of the ceramic electrode of the ferroelectric capacitor according to the present invention will be described. Examples 1 to 12 are examples of configuring the ferroelectric capacitor having the configuration shown in FIG.

Example 1 A RuO ₂ film was formed by a sol-gel method using a sol-gel solution containing ruthenium alkoxide as a conductive ceramic electrode constituting a lower electrode on a sufficiently washed high-resistance silicon substrate. . At this time, the film forming temperature is 400 to 800 ° C. and the film thickness is 20.
It was set to 0 nm.

On top of this, a conductive oxide P having a pyrochlore type structure was formed by laser ablation.
A b ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

[0024] According to yet a sol-gel method on this was formed a ferroelectric Pb (Zr, Ti) a O ₃ in a thickness of 300 nm. The film forming temperature was in the range of 600 to 700 ° C. On top of this, a compound Pb ₂ Ru ₂ O ₇ having a pyrochlore structure and a conductive ceramic RuO ₂ were successively laminated as an upper electrode to form a capacitor structure.

Example 2 A SiO ₂ film of a thermal oxide film was formed to a thickness of about 300 nm on a high resistance silicon substrate, and then a RuO ₂ film was formed by a sol-gel method using a sol-gel solution containing ruthenium alkoxide. . At this time, the film forming temperature was 400 to 800 ° C. and the film thickness was 200 nm.

On top of this, a conductive oxide P having a pyrochlore type structure was formed by laser ablation.
A b ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

[0027] According to yet a sol-gel method on this was formed a ferroelectric Pb (Zr, Ti) a O ₃ in a thickness of 300 nm. The film forming temperature was in the range of 600 to 700 ° C. On top of this, Pb ₂ Ru ₂ O ₇ and Ru were further formed as upper electrodes.
O ₂ was sequentially laminated to form a capacitor structure.

Example 3 A Ru film was formed by sputtering on a sufficiently cleaned high-resistance silicon substrate and annealed in oxygen to form a RuO ₂ film. At this time, the film forming temperature was 400 to 800 ° C. and the film thickness was 200 nm.

On top of this, a conductive oxide P having a pyrochlore type structure was formed by laser ablation.
A b ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

Further, a ferroelectric Pb (Zr, Ti) O ₃ having a thickness of 300 nm was formed thereon by the sol-gel method. The film forming temperature was in the range of 600 to 700 ° C. On top of this, Pb ₂ Ru ₂ O ₇ and Ru were further formed as upper electrodes.
O ₂ was sequentially laminated to form a capacitor structure.

(Embodiment 4) After a SiO ₂ film of a thermal oxide film is formed to a thickness of about 300 nm on a high resistance silicon substrate, a Ru film is formed by a sputtering method and annealed in oxygen to perform Ru.
A film of O ₂ was formed. At this time, the film forming temperature is 400 to 80
The film thickness was 200 nm at 0 ° C.

On top of this, a conductive oxide P having a pyrochlore type structure was formed by laser ablation.
A b ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

Further, a ferroelectric Pb (Zr, Ti) O ₃ having a thickness of 300 nm was formed thereon by the sol-gel method. The film forming temperature was in the range of 600 to 700 ° C. On top of this, Pb ₂ Ru ₂ O ₇ and Ru were further formed as upper electrodes.
O ₂ was sequentially laminated to form a capacitor structure.

(Embodiment 5) SrRuO is formed on a sufficiently cleaned high resistance silicon substrate by a laser ablation method.
_Three films were formed. At this time, the film forming temperature is 600 to 800 ° C.
The film thickness was 200 nm.

On top of this, a conductive oxide P having a pyrochlore type structure was formed by laser ablation.
A b ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

[0036] According to yet a sol-gel method on this was formed a ferroelectric Pb (Zr, Ti) a O ₃ in a thickness of 300 nm. The film forming temperature was in the range of 600 to 700 ° C.

On top of this, Pb ₂
Ru ₂ O ₇ and SrRuO ₃ were sequentially laminated to form a capacitor structure.

(Example 6) A SiO ₂ film of a thermal oxide film was formed to a thickness of about 300 nm on a high resistance silicon substrate, and then a SrRuO ₂ film was formed by a laser ablation method. At this time, the film forming temperature is 600 to 800 ° C., and the film thickness is 20.
It was set to 0 nm. A conductive oxide P having a pyrochlore type structure is formed on this by a laser ablation method.
A b ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

Further, a ferroelectric Pb (Zr, Ti) O ₃ having a thickness of 300 nm was formed thereon by the sol-gel method. The film forming temperature was in the range of 600 to 700 ° C.

On top of this, Pb ₂
Ru ₂ O ₇ and SrRuO ₃ were sequentially laminated to form a capacitor structure.

Example 7 A RuO ₂ film was formed by a sol-gel method using a sol-gel solution containing ruthenium alkoxide on a sufficiently washed high-resistance silicon substrate. At this time, the film forming temperature was 400 to 800 ° C. and the film thickness was 200 nm.

A conductive oxide having a pyrochlore type structure, B, is formed thereon by a laser ablation method.
An i ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

Further, a ferroelectric SrBi ₂ Ta ₂ O ₉ film having a thickness of 300 nm was formed thereon by laser ablation. The film formation temperature is in the range of 500 to 600 ° C., and crystallization is performed by post annealing at 700 ° C. On top of this, Bi ₂ Ru ₂ O ₇ , R
uO ₂ was sequentially laminated to form a capacitor structure.

(Embodiment 8) A SiO ₂ film of a thermal oxide film was formed to a thickness of about 300 nm on a high resistance silicon substrate, and then a RuO ₂ film was formed by a sol-gel method using a sol-gel solution containing ruthenium alkoxide. . At this time, the film forming temperature was 400 to 800 ° C. and the film thickness was 200 nm.

On top of this, a conductive oxide B having a pyrochlore type structure was formed by laser ablation.
An i ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

Further, a ferroelectric SrBi ₂ Ta ₂ O ₉ film having a thickness of 300 nm was formed thereon by laser ablation. The film formation temperature is in the range of 500 to 600 ° C., and crystallization is performed by post annealing at 700 ° C. On top of this, Bi ₂ Ru ₂ O ₇ , R
uO ₂ was sequentially laminated to form a capacitor structure.

Example 9 A Ru film was formed by sputtering on a sufficiently cleaned high resistance silicon substrate and annealed in oxygen to form a RuO ₂ film. At this time, the film forming temperature was 400 to 800 ° C. and the film thickness was 200 nm.

A conductive oxide having a pyrochlore type structure, B, is formed thereon by a laser ablation method.
An i ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

Further, a ferroelectric material Bi ₂ Sr ₂ O ₇ was formed thereon to a thickness of 300 nm by laser ablation. The film forming temperature is in the range of 500 to 600 ° C.,
It is crystallized by post annealing at 700 ° C. On top of this, Bi ₂ Ru ₂ O ₇ and RuO are further formed as upper electrodes.
₂ was sequentially laminated to form a capacitor structure.

(Embodiment 10) After forming a SiO ₂ film of about 300 nm in thickness as a thermal oxide film on a high resistance silicon substrate, a Ru film is formed by a sputtering method and annealed in oxygen to perform R.
A film of uO ₂ was formed. At this time, the film forming temperature is 400 to 8
The film thickness was 200 nm at 00 ° C.

A conductive oxide B having a pyrochlore type structure is formed on this layer by a laser ablation method.
An i ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

Further, a ferroelectric material Bi ₂ Sr ₂ O ₇ was formed into a film having a thickness of 300 nm on this by a laser ablation method. The film forming temperature is in the range of 500 to 600 ° C.,
It is crystallized by post annealing at 700 ° C. On top of this, Bi ₂ Ru ₂ O ₇ and RuO are further formed as upper electrodes.
₂ was sequentially laminated to form a capacitor structure.

(Embodiment 11) SrRu is laser-ablated on a sufficiently cleaned high-resistance silicon substrate.
An O ₃ film was formed. At this time, the film forming temperature is 600 to 800.
The film thickness was 200 nm as the temperature. A 100 nm thick Bi ₂ Ru ₂ O ₇ thin film, which is a conductive oxide having a pyrochlore type structure, is formed thereon by laser ablation.
Was formed to a thickness of

Further, a ferroelectric material Bi ₂ Sr ₂ O ₇ was formed thereon to a thickness of 300 nm by laser ablation. The film forming temperature is in the range of 500 to 600 ° C.,
It is crystallized by post annealing at 700 ° C.

On top of this, Bi ₂
Ru ₂ O ₇ and SrRuO ₃ were sequentially laminated to form a capacitor structure.

(Example 12) A SiO ₂ film of a thermal oxide film was formed to a thickness of about 300 nm on a high resistance silicon substrate, and then a SrRuO ₃ film was formed by a laser ablation method.
At this time, the film formation temperature is 600 to 800 ° C., and the film thickness is 2
00 nm.

A conductive oxide B having a pyrochlore type structure was formed thereon by a laser ablation method.
An i ₂ Ru ₂ O ₇ thin film was formed to a thickness of 100 nm.

Further, a ferroelectric material Bi ₂ Sr ₂ O ₇ was formed into a film having a thickness of 300 nm on this by the laser ablation method. The film forming temperature is in the range of 500 to 600 ° C.,
It is crystallized by post annealing at 700 ° C. On top of this, Bi ₂ Ru ₂ O ₇ , SrR is further formed as an upper electrode.
uO ₃ was sequentially laminated to form a capacitor structure.

The compound layer having the pyrochlore structure is not limited to the structure provided on both the upper electrode and the lower electrode as shown in each embodiment, and one of them may be formed depending on the arrangement of the capacitors. There is also a case where it is configured to be provided only. However, in general, for the purpose of suppressing the compositional deviation of the ferroelectric layer, rather than disposing a compound layer having a pyrochlore structure on only one of the upper electrode or the lower electrode, a compound having a pyrochlore structure is formed on both electrode layers. It is preferable to form and arrange layers.

Further, the ceramic electrode and the compound layer having the pyrochlore structure are preferably made of the same material for the upper electrode and the lower electrode in manufacturing, but they may be made of different materials.

The temperature of the heat treatment is selected according to the ferroelectric material used. For example, 650-700 for PZT
It is preferable to perform heat treatment at 650 to 800 ° C. for SrBi ₂ Ta ₂ O ₉ .

As described above, by disposing and forming the compound layer having the pyrochlore structure containing at least one element contained in the ferroelectric layer at the position in contact with the ferroelectric layer of the upper electrode and the lower electrode, Diffusion of constituent elements from the dielectric layer can be prevented, and the dielectric characteristics of the ferroelectric substance can be sufficiently exhibited.

Next, an example in which the ferroelectric capacitor ceramic electrode of the present invention is applied to a semiconductor memory such as a non-volatile memory will be described.

FIG. 2 shows a sectional view of an example of a nonvolatile memory having a planar structure to which the ceramic electrode for a ferroelectric capacitor according to the present invention is applied. This non-volatile memory is
An element isolation insulating layer 12 formed by local oxidation so-called LOCOS is formed on a semiconductor substrate 11, and a source region 15 and a drain region 16 are formed in regions separated by the element isolation insulating layer 12. These source and drain regions 1
A MIS transistor (insulated gate type field effect transistor) in which a gate electrode 14 is formed via a gate insulating film 13 such as SiO ₂ is formed between 5 and 16.
Further, an interlayer insulating layer 17 made of, for example, SiO ₂ or BPSG (boron phosphorus silicate glass) is formed on the MIS transistor.

Then, the lower electrode 18 made of the conductive ceramic electrode 3 is formed on the inter-layer insulating layer 17 on the element isolation insulating layer 12. In the present invention, the lower electrode 18 is formed on the lower electrode 18 by a strong force. A compound layer 4 having a pyrochlore structure is interposed between the dielectric layer 2 and the dielectric layer 2. Then, the ferroelectric layer 2 is formed on the compound layer 4 having the pyrochlore structure, and the compound layer 4 having the pyrochlore structure is similarly formed thereon.
The upper electrode 19 is formed of the conductive ceramic electrode 3 with the interposition of. As a result, the large-capacity ferroelectric capacitor 1 is constituted by the lower electrode 18, the ferroelectric layer 2, and the upper electrode 19.

Further, an upper insulating layer 21 is formed over the entire surface including the upper electrode 19, and contact holes 22 are formed in the upper insulating layer 21, for example, on the upper electrode 19 and on the source region 15 of the interlayer insulating layer 17. The upper electrode 19 and the source region 15 are drilled and contacted by the wiring 23 through the contact holes 22.

Next, an example in which the ceramic electrode for a ferroelectric capacitor of the present invention is applied to another type of semiconductor memory will be described.

FIG. 3 is a sectional view showing an example of a nonvolatile memory having a stack type structure to which a ceramic electrode for a ferroelectric capacitor according to the present invention is applied. In FIG. 3, the same symbols are given to the corresponding portions in FIG. In this non-volatile memory, an element isolation insulating layer 12 is formed on a semiconductor substrate 11 by local oxidation so-called LOCOS, and a MIS transistor is formed in a region separated by this. That is, also in this case, the source region 15 and the drain region 16 are formed in the same manner as described with reference to FIG. 2, and the gate electrode is formed between the source and drain regions 15 and 16 via the gate insulating film 13 such as SiO _2. The MIS transistor 14 is formed, and the interlayer insulating layer 17 such as SiO _{2 is} further formed on the MIS transistor.

Then, the source region 15 of the interlayer insulating layer 17 is formed.
A plug electrode 24 made of polycrystalline silicon, tungsten or the like is formed in the contact hole 22 formed above,
The lower electrode 18 made of the conductive ceramic electrode 3 is formed on the plug electrode 24.

Next, the ferroelectric layer 2 is formed on the lower electrode 18 via the compound layer 4 having the pyrochlore structure,
Further, the upper electrode 19 made of the conductive ceramic electrode 3 is formed on the above with the compound layer 4 having the pyrochlore structure interposed therebetween. As a result, the large-capacity ferroelectric capacitor 1 is constituted by the lower electrode 18, the ferroelectric layer 2, and the upper electrode 19.

Then, the upper insulating layer 21 is formed over the entire surface including the upper electrode 19, and the wiring 23 contacting the upper electrode 19 is formed through the contact hole formed in the upper insulating layer 21. It has become.

By applying the ceramic electrode for a ferroelectric capacitor of the present invention, it is possible to prevent the deterioration of the characteristics due to the deviation of the composition of the ferroelectric, so that the characteristics of the ferroelectric can be sufficiently exhibited. It is possible to use such a semiconductor memory as a semiconductor memory having good electrical characteristics.

The ceramic electrode for a ferroelectric capacitor of the present invention is not limited to the above-mentioned embodiments, and various other structures can be adopted without departing from the gist of the present invention.

The ferroelectric capacitor to which the present invention is applied is
By applying this to a non-volatile memory, a piezoelectric element, an optical switch, etc., in addition to a capacitor alone, an element having good electric characteristics can be constructed.

[0075]

According to the above-mentioned ceramic electrode for a ferroelectric capacitor according to the present invention, the element contained in the ferroelectric layer and the conductive ceramic electrode are contained between the ferroelectric layer and the conductive ceramic electrode. By arranging and forming a compound having a highly conductive pyrochlore structure containing at least one of each of the elements to be formed, the composition of the ferroelectric layer does not shift, and good characteristics such as dielectric characteristics are obtained.
Further, it is possible to configure a ferroelectric capacitor suitable for fine processing.

Since fine processing can be performed, high integration of elements having a ferroelectric capacitor such as a non-volatile memory, a piezoelectric element, and an optical switch can be achieved.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a ferroelectric capacitor to which a ceramic electrode for a ferroelectric capacitor of the present invention is applied.

FIG. 2 is a cross-sectional view of an example of a nonvolatile memory having a planar structure to which the ceramic electrode for a ferroelectric capacitor of the present invention is applied.

FIG. 3 is a cross-sectional view of an example of a nonvolatile memory having a stack type structure to which the ceramic electrode for a ferroelectric capacitor of the present invention is applied.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Ferroelectric capacitor 2 Ferroelectric layer 3 Ceramic electrode 4 Pyrochlore type compound layer 10 Electrode forming surface 11 Substrate 12 Element isolation insulating layer 13 Gate insulating film 14 Gate electrode 15 Source region 16 Drain region 17 Interlayer insulating layer 18 Lower part Electrode 19 Upper electrode 21 Upper insulating layer 22 Contact hole 23 Wiring 24 Plug electrode

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hitoshi Tanaka 6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation

Claims (3)

[Claims] 1. In at least one of an upper electrode layer and a lower electrode layer formed of a conductive ceramic electrode of a ferroelectric capacitor, between the electrode layer and the ferroelectric substance of the capacitor, the ferroelectric A ferroelectric capacitor in which a layer made of a compound having a good conductive pyrochlore structure containing at least one element contained in the body and at least one element contained in the conductive ceramic is arranged and formed. For ceramic electrodes. 2. The ferroelectric material is a lead-based ferroelectric material, the conductive ceramic is a compound having a rutile structure or a compound having a perovskite structure, and the compound having a good conductive pyrochlore structure is lead. The ceramic electrode for a ferroelectric capacitor according to claim 1, wherein the ceramic electrode is made of a compound having a pyrochlore structure. 3. The ferroelectric substance is a bismuth layered compound ferroelectric substance, the conductive ceramic is a rutile type compound or a perovskite type compound, and the good conductive pyrochlore type compound is The ceramic electrode for a ferroelectric capacitor according to claim 1, comprising a bismuth-based compound having a pyrochlore structure.