JP2009525406A - 銀の保護被覆 - Google Patents
銀の保護被覆 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- A—HUMAN NECESSITIES
- A44—HABERDASHERY; JEWELLERY
- A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
- A44C27/00—Making jewellery or other personal adornments
- A44C27/001—Materials for manufacturing jewellery
- A44C27/005—Coating layers for jewellery
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
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- Other Surface Treatments For Metallic Materials (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
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- Chemical Vapour Deposition (AREA)
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- Surface Treatment Of Glass (AREA)
- Laminated Bodies (AREA)
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Abstract
Description
薄層という用語は、本明細書では、厚さ1nm〜1μm、好ましくは1〜100nm、最も好ましくは約2〜20nmを有する層を意味する。
本出願の解決手段では、ALD技術は、銀を含む物体の被覆に適用される。本解決手段では、銀を含む物体を、酸化アルミニウムAl2O3を含む被覆で被覆する。しかしながら、任意の無色の金属酸化物、例えば酸化ジルコニウムZrO2、酸化チタンTiO2、酸化クロムCr2O3、酸化インジウムIn2O3、酸化ニオブNb2O5、またはALD技術によって得られる任意の他の材料もまた使用することができる。
被覆プロセスにおいては、通常、できる限り薄い被覆が望ましいが、所望の特性を示すには依然として十分な厚さとなるようにする。本解決手段によれば、被覆の厚さは、好ましくは1ナノメートル〜1マイクロメートルの範囲内、より好ましくは5〜200ナノメートルの範囲内、最も好ましくは約10ナノメートルである。被覆の厚さは、被覆材の分子層の数を変化させることによって調節することができる。
本解決手段のさらに別の実施態様では、本方法を、本明細書において説明する方法以外の1つ以上の保護方法と一緒に適用する。その場合、例えば酸化に対する耐性がある銀合金の使用を適用してよい。
本解決手段のさらに別の実施態様では、本方法を、銀合金を被覆することに適用する。
酸化アルミニウムの使用は、本解決手段に必ずしも必要とされていない。ALD技術によって得られる任意の他の被覆材、例えば酸化チタン(TiO2)、酸化タンタル(Ta2O5)及び/または酸化ジルコニウム(ZrO2)もまた使用してよいことに注意されたい。様々な被覆材を同時に使用してよい。得られた被覆は所望の特性を有していなければならず、被覆は被覆される金属(例えば銀)との相性がよくなければならない。(CH3)Alの代わりに、また他の化合物を前駆体として使用してよく、これは例えば塩化アルミニウムAlCl3及び/またはトリエチルアルミニウム(CH3CH2)3Alである。水の代わりに、他の化合物、例えば過酸化水素H2O2、オゾンO3等を酸素源として使用してもよい。被覆材の選択は、用途に依存し得る。例えば、食卓用食器具または宝石類は、生体適合性被覆層を必要とすることがある。生体適合性被覆材の例は、酸化アルミニウムAl2O3である。図1に示す反応を様々な順序で行うことができ、また他の反応及び/又は工程を実施することができる。
Claims (14)
- ALD(原子層堆積)法を用いて、銀製品、物品または部品の表面の少なくとも一部分に保護材料の薄い被覆を適用することを特徴とする、銀製品、物品または部品を変色から保護する方法。
- 1nm〜1μmの範囲内、より好ましくは2nm〜100nmの範囲内、最も好ましくは約2〜20nmの厚さの薄い被覆を適用することを特徴とする、請求項1に記載の方法。
- 1nm〜1μmの範囲内、より好ましくは40nm〜90nmの範囲内の厚さの薄い被覆を適用することを特徴とする、請求項1に記載の方法。
- ALD(原子層堆積)法を使用して金属酸化物の少なくとも1つの層を提供することによって、前記薄い被覆を適用することを特徴とする、請求項1、2または3に記載の方法。
- 金属酸化物は、酸化アルミニウムAl2O3、酸化チタンTiO2、酸化クロムCr2O3、酸化ジルコニウムZrO2、酸化インジウムIn2O3、酸化ニオブNb2O5を含むことを特徴とする、請求項3に記載の方法。
- 保護膜は実質的に透明な非酸化物材料であることを特徴とする、請求項1〜3のいずれか1項に記載の方法。
- ALD(原子層堆積)法を使用して、前記銀製品、物品または部品の表面の少なくとも一部分に様々な保護材料の連続層を提供することによって、前記薄い被覆を適用することを特徴とする、請求項1〜6のいずれか1項に記載の方法。
- 前記銀製品、物品または部品の表面の少なくとも一部分に実質的に無色の被覆を適用することを特徴とする、請求項1または7に記載の方法。
- 前記被覆を、好ましくは80〜400℃の範囲内、より好ましくは120〜300℃、最も好ましくは約200℃の温度で実施することを特徴とする、請求項1〜8のいずれか1項に記載の方法。
- 複数の部品からなる銀製品が組立てられた後に、被覆が前記製品の表面に生成されることを特徴とする、請求項1〜9のいずれか1項に記載の方法。
- 前記方法は、銀宝石類、硬貨、メダル、食卓用食器具、装身具またはその他同様な銀製品に適用されることを特徴とする、請求項1〜9のいずれか1項に記載の方法。
- 前記方法は、銀若しくは銀合金で製造された電子又は電気部品、あるいは他の産業用部品の少なくとも一部分に適用されることを特徴とする、請求項1〜9のいずれか1項に記載の方法。
- 前記方法は、銀に加えて、いくつかの異なる材料を含む製品に適用されることを特徴とする、請求項1〜9のいずれか1項に記載の方法。
- ALD(原子層堆積)法を用いて、銀製品、物品または部品の表面の少なくとも一部分に厚さ1nm〜1μmを有する薄い保護被覆を適用するための、ALD(原子層堆積)法の使用。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20065082A FI121341B (fi) | 2006-02-02 | 2006-02-02 | Hopean suojapinnoitus |
| FI20065082 | 2006-02-02 | ||
| PCT/FI2007/050056 WO2007088249A1 (en) | 2006-02-02 | 2007-01-31 | Protective coating of silver |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009525406A true JP2009525406A (ja) | 2009-07-09 |
| JP5297203B2 JP5297203B2 (ja) | 2013-09-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008552836A Active JP5297203B2 (ja) | 2006-02-02 | 2007-01-31 | 銀の保護被覆 |
Country Status (12)
| Country | Link |
|---|---|
| US (2) | US8883258B2 (ja) |
| EP (2) | EP1994202B2 (ja) |
| JP (1) | JP5297203B2 (ja) |
| KR (1) | KR101442850B1 (ja) |
| CN (2) | CN103215560A (ja) |
| AT (1) | ATE548482T1 (ja) |
| AU (1) | AU2007211451B2 (ja) |
| DK (1) | DK1994202T4 (ja) |
| EA (1) | EA012990B1 (ja) |
| ES (1) | ES2379892T5 (ja) |
| FI (2) | FI121341B (ja) |
| WO (1) | WO2007088249A1 (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013171982A (ja) * | 2012-02-21 | 2013-09-02 | Nichia Chem Ind Ltd | 半導体発光素子及びその製造方法 |
| JP2016511535A (ja) * | 2013-01-28 | 2016-04-14 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Ald層によって封止したオプトエレクトロニクス半導体チップおよび対応する製造方法 |
| CN111172511A (zh) * | 2020-01-17 | 2020-05-19 | 胜科纳米(苏州)有限公司 | 一种在有机材料表面制备金属膜层的方法 |
| JP2020097213A (ja) * | 2018-09-21 | 2020-06-25 | ザ・スウォッチ・グループ・リサーチ・アンド・ディベロップメント・リミテッド | 銀面を有する基材に対する曇りから銀を保護する層を接着させて材料を作る方法 |
| JP2020113741A (ja) * | 2019-01-07 | 2020-07-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
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| TW200840880A (en) * | 2007-04-13 | 2008-10-16 | Hsin-Chih Lin | Method of forming protection layer on contour of workpiece |
| FI20070991A7 (fi) * | 2007-12-19 | 2009-06-20 | Beneq Oy | Lasituote, tuotteen käyttö ja valmistusmenetelmä |
| WO2010009467A2 (en) | 2008-07-18 | 2010-01-21 | Serenity Technologies, Inc. | Method for producing nanocrystalline diamond coatings on gemstones and other substrates |
| DE102009041264A1 (de) | 2009-09-11 | 2011-03-24 | IPHT Jena Institut für Photonische Technologien e.V. | Verfahren zur Herstellung von optisch aktiven Nanostrukturen |
| DE102009053889B4 (de) | 2009-11-20 | 2014-03-27 | C. Hafner Gmbh + Co. Kg | Verfahren zur Beschichtung einer metallischen Substratoberfläche mit einer durch einen ALD-Prozess aufgebrachten Materialschicht |
| US8802202B2 (en) | 2010-03-05 | 2014-08-12 | Suneeta S. Neogi | Method for imparting tarnish protection or tarnish protection with color appearance to silver, silver alloys, silver films, silver products and other non precious metals |
| US20110236654A1 (en) * | 2010-03-26 | 2011-09-29 | Wen-Kuang Hsu | Method of surface treatment and surface treated article provied by the same |
| CN102206810A (zh) * | 2010-03-30 | 2011-10-05 | 徐文光 | 一种表面处理方法以及使用该方法的经表面处理的物品 |
| JP5864089B2 (ja) | 2010-08-25 | 2016-02-17 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| CN101974734B (zh) * | 2010-11-30 | 2012-11-21 | 上海纳米技术及应用国家工程研究中心有限公司 | 具有多层复合防护膜的基底材料的制备方法 |
| ITVR20120007A1 (it) * | 2012-01-13 | 2013-07-14 | Patros S R L | Prodotto manufatto per la gioielleria e/o l'orificeria e/o la bigiotteria a base di ossido di zirconio e relativo metodo |
| TWI641726B (zh) * | 2012-01-16 | 2018-11-21 | 日立化成股份有限公司 | Silver surface treatment agent and illuminating device |
| CN103757604A (zh) * | 2013-12-25 | 2014-04-30 | 上海纳米技术及应用国家工程研究中心有限公司 | 用于银制品表面防护涂层的制备方法 |
| US20150185382A1 (en) * | 2013-12-31 | 2015-07-02 | Saint-Gobain Performance Plastics Corporation | Composite film having superior optical and solar performance |
| CN104060239B (zh) * | 2014-06-06 | 2017-05-10 | 华中科技大学 | 一种金属物品表面保护方法 |
| US20170212280A1 (en) * | 2014-07-07 | 2017-07-27 | Scint-X Ab | Production of a thin film reflector |
| US11365481B2 (en) * | 2015-10-06 | 2022-06-21 | City University Of Hong Kong | Homogeneous and transparent protective coatings for precious metals and copper alloys |
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- 2007-01-31 DK DK07704826.2T patent/DK1994202T4/da active
- 2007-01-31 EP EP07704826.2A patent/EP1994202B2/en active Active
- 2007-01-31 AU AU2007211451A patent/AU2007211451B2/en active Active
- 2007-01-31 AT AT07704826T patent/ATE548482T1/de active
- 2007-01-31 EP EP12158081A patent/EP2468921A1/en not_active Withdrawn
- 2007-01-31 KR KR1020087018930A patent/KR101442850B1/ko active Active
- 2007-01-31 US US12/162,051 patent/US8883258B2/en active Active
- 2007-01-31 JP JP2008552836A patent/JP5297203B2/ja active Active
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- 2007-01-31 EA EA200870142A patent/EA012990B1/ru not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2013171982A (ja) * | 2012-02-21 | 2013-09-02 | Nichia Chem Ind Ltd | 半導体発光素子及びその製造方法 |
| US9837579B2 (en) | 2012-02-21 | 2017-12-05 | Nichia Corporation | Semiconductor light emitting element and method for producing the same |
| JP2016511535A (ja) * | 2013-01-28 | 2016-04-14 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | Ald層によって封止したオプトエレクトロニクス半導体チップおよび対応する製造方法 |
| US9761770B2 (en) | 2013-01-28 | 2017-09-12 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production |
| JP2020097213A (ja) * | 2018-09-21 | 2020-06-25 | ザ・スウォッチ・グループ・リサーチ・アンド・ディベロップメント・リミテッド | 銀面を有する基材に対する曇りから銀を保護する層を接着させて材料を作る方法 |
| JP2020113741A (ja) * | 2019-01-07 | 2020-07-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP7312056B2 (ja) | 2019-01-07 | 2023-07-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| TWI842807B (zh) * | 2019-01-07 | 2024-05-21 | 日商日機裝股份有限公司 | 半導體發光元件以及半導體發光元件的製造方法 |
| CN111172511A (zh) * | 2020-01-17 | 2020-05-19 | 胜科纳米(苏州)有限公司 | 一种在有机材料表面制备金属膜层的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2468921A1 (en) | 2012-06-27 |
| ES2379892T5 (es) | 2020-06-18 |
| ES2379892T3 (es) | 2012-05-04 |
| DK1994202T4 (da) | 2020-02-03 |
| EP1994202B2 (en) | 2019-12-18 |
| KR101442850B1 (ko) | 2014-11-19 |
| CN101379215A (zh) | 2009-03-04 |
| DK1994202T3 (da) | 2012-04-02 |
| AU2007211451B2 (en) | 2011-08-11 |
| EA200870142A1 (ru) | 2009-02-27 |
| EP1994202A1 (en) | 2008-11-26 |
| US20140335272A1 (en) | 2014-11-13 |
| FI10853U1 (fi) | 2015-04-27 |
| FI20065082L (fi) | 2007-08-03 |
| EP1994202B1 (en) | 2012-03-07 |
| FI20065082A0 (fi) | 2006-02-02 |
| FI121341B (fi) | 2010-10-15 |
| KR20080103517A (ko) | 2008-11-27 |
| WO2007088249A1 (en) | 2007-08-09 |
| US8883258B2 (en) | 2014-11-11 |
| EP1994202A4 (en) | 2010-04-14 |
| EA012990B1 (ru) | 2010-02-26 |
| CN103215560A (zh) | 2013-07-24 |
| AU2007211451A1 (en) | 2007-08-09 |
| US20090004386A1 (en) | 2009-01-01 |
| JP5297203B2 (ja) | 2013-09-25 |
| ATE548482T1 (de) | 2012-03-15 |
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