JP2007141926A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processor and a substrate processing method with which occurrence of a watermark can be prevented and pure water or chemical can efficiently be supplied to a surface of a substrate. <P>SOLUTION: The substrate processor is provided with a plurality of processing chambers where the surface of the substrate W is processed, a conveyance robot 29 conveying the substrate W in a state where the surface of the substrate W is turned up between a plurality of processing chambers, and a shower head 10 supplying liquid to whole surface regions of the substrate W while it moves in a confronted arrangement state to the substrate W conveyed by the conveyance robot 29. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to a substrate processing apparatus and a substrate processing method for performing a cleaning process on a surface of a substrate.

  In order to improve the operation speed of a semiconductor element, the use of an interlayer insulating film composed of a copper (Cu) wiring and a low-k (low dielectric constant) film has been studied. Low-k films mainly include inorganic material films such as SiOF (FSG), SiOC, HSQ (H-containing polysiloxane), MSQ (methyl-containing polysiloxane), polyimide derivatives, paraxylylene resins, fluorine resins, etc. Examples thereof include organic material films, porous films, and Air Gap structure films.

  When forming a Cu wiring structure using the Low-k film, for example, after forming a Cu film on the Low-k film in a state of embedding a recess provided in the Low-k film on the substrate, for example, Polishing is performed by a chemical mechanical polishing (CMP) method until the surface of the low-k film is exposed. Thereafter, in order to remove polishing residues including particles and metals, the substrate surface is subjected to a cleaning process with the surface of the low-k film exposed.

  Here, as shown in FIG. 12, a general CMP apparatus 1 ′ includes a polishing unit 2 and a cleaning unit 3. The polishing unit 2 includes a standby chamber 4 in which a polished wafer (substrate) W waits before being transferred to the cleaning unit 3. The cleaning unit 3 supplies a chemical solution to the surface of the substrate W transported from the standby chamber 4 to perform a cleaning process, and a second cleaning chamber 6 to rinse the substrate W after the chemical process with pure water. And a drying chamber 7 for drying the substrate W after rinsing with pure water. A pin chuck type substrate holder 9 that holds the substrate W is disposed at the bottom of each processing chamber.

  In the CMP apparatus 1 ′ as described above, the chemical solution and pure water supplied in the first cleaning chamber 5 and the second cleaning chamber 6 are usually stored in the substrate holding unit 9 as shown in the enlarged sectional view of the region C. It is supplied to the surface of the substrate W held by the substrate holding part 9 from the fixed nozzle 10 ′ disposed above. For this reason, as shown in FIG. 13, the surface of the substrate W is partially dried when the substrate W is waiting in the standby chamber 4 or when the substrate W is transferred between the processing chambers indicated by dotted lines in the drawing. A three-phase interface is formed between the surface, air and water.

  In particular, in the cleaning process of the surface of the substrate W after the CMP process when forming the Cu wiring structure as described above, the low-k film is exposed on the surface of the substrate W, and the low-k film is generally hydrophobic. Since the property is strong, the three-phase interface is easily formed. When this three-phase interface is formed, the oxidative corrosion reaction of copper proceeds due to the participation of oxygen, Cu on the surface of the substrate W and oxygen (O) in the atmosphere are dissolved in water, and copper oxide is generated. The In the subsequent drying process, this product is deposited on the surface of the substrate W, and a watermark is generated.

  Therefore, in order to prevent the generation of watermarks during the transfer of the substrate, a substrate transfer path, which is internally partitioned by a shutter, is installed above the cleaning unit (final rinse unit) and the drying unit. There has been reported a substrate processing apparatus configured so that pure water is supplied in parallel to the substrate surface from a pure water nozzle fixed inside a cover for sealing (see, for example, Patent Document 1).

Japanese Patent Laid-Open No. 2000-1000076

  However, in the substrate processing apparatus described in Patent Document 1, pure water is not supplied to the entire surface of the substrate while being transported from the transport path to the drying unit, and the shutter that delimits the transport path is opened. When pure water is allowed to pass through, pure water is supplied from the pure water nozzle fixed to the top of the cover that covers the transport path, so that it is difficult to supply pure water to the surface of the substrate. For this reason, it is difficult to completely cover the substrate surface with the liquid film. In particular, as described above, in the case where a highly hydrophobic Low-k film or the like is exposed on the surface of the substrate, if the liquid is not always supplied to the entire surface of the substrate, it is partially dried. As a result, a three-phase interface is formed, and there is a problem in that the generation of watermarks cannot be reliably prevented.

  Moreover, in the substrate processing apparatus as described above, since pure water is supplied in parallel to the substrate surface from the nozzle fixed above the cover that covers the transport path, it is difficult to efficiently supply pure water to the substrate surface. In addition to an increase in the amount of use, there is a problem that contamination is likely to occur due to scattering of pure water after cleaning in the apparatus. Furthermore, since pure water is supplied from the upper part of the transport path to the entire transport path, mist is likely to be generated in the transport path, and the mist adheres to the surface of the substrate, resulting in a watermark. There is also.

  Therefore, the present invention provides a substrate processing apparatus and a substrate processing method capable of preventing the generation of a watermark, efficiently supplying pure water or a chemical solution to the surface of the substrate, and suppressing contamination in the apparatus. The purpose is to do.

  In order to solve the above problems, a substrate processing apparatus of the present invention includes a plurality of processing chambers that perform processing on the surface of a substrate, and a transfer that transfers the substrate between the plurality of processing chambers with the substrate surface facing upward. And a nozzle that supplies liquid toward the entire surface of the substrate while moving in a state of being opposed to the surface of the substrate conveyed by the conveying means.

  According to such a substrate processing apparatus, since the nozzle for supplying the liquid toward the entire surface of the substrate transported by the transport means is provided, the entire surface is covered with the liquid film between the processing chambers. The substrate is transferred. This prevents the formation of a three-phase interface between air, water and the substrate due to partial drying on the surface of the substrate being transported. For this reason, it becomes possible to prevent the occurrence of a watermark. Further, since the liquid is supplied while moving in a state where the nozzle is opposed to the surface of the substrate conveyed by the conveying means, compared with a substrate processing apparatus that supplies the liquid from the nozzle fixed during the conveyance, Liquid is efficiently supplied to the surface of the substrate, and scattering of the liquid into the apparatus is suppressed.

  Further, the substrate processing method of the present invention is a substrate processing method having a plurality of processes for processing the surface of the substrate. The substrate is moved upward between the processes and moved in a state of being opposed to the substrate. The liquid is supplied from the nozzle to the entire surface of the substrate.

  According to such a cleaning method, since the liquid is supplied to the entire surface of the substrate between the steps, the entire surface is covered with the liquid film. This prevents the formation of a three-phase interface between the atmosphere, water, and the substrate due to partial drying of the surface of the substrate during the process. For this reason, it becomes possible to prevent the occurrence of a watermark. In addition, since the liquid is supplied to the entire surface of the substrate from the nozzle that moves while facing the substrate, the liquid is supplied efficiently.

  As described above, according to the substrate processing apparatus and the substrate processing method of the present invention, it is possible to prevent the occurrence of a watermark on the surface of the substrate, thereby improving the yield and reliability of elements formed on the substrate. Can do. In addition, since the liquid can be efficiently supplied to the surface of the substrate, the manufacturing cost can be suppressed and the productivity can be improved. Furthermore, since the scattering of the liquid into the apparatus is suppressed, contamination in the apparatus can be suppressed.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a block diagram showing a preferred embodiment of the substrate processing apparatus of the present invention. In addition, the same number is attached | subjected and demonstrated to the structure similar to the substrate processing apparatus demonstrated by background art.

  First, as shown in FIG. 1, the substrate processing apparatus of this embodiment is, for example, a CMP apparatus 1, and includes a polishing unit 2 that performs a CMP process on a substrate W, and a cleaning unit 3 that performs a cleaning process after polishing and a drying process. I have. The polishing unit 2 and the cleaning unit 3 are provided with a plurality of processing chambers. For example, in the polishing unit 2, a polishing processing chamber 2 ′ that performs CMP processing on the substrate W and a substrate W that has been subjected to CMP processing are on standby. A waiting room 4 is provided.

  The cleaning unit 3 includes, for example, a first cleaning chamber 5 that supplies a chemical liquid to the surface of the substrate W transferred from the standby chamber 4 and performs a cleaning process, and a first water rinse that cleans the substrate W after the chemical liquid process. 2 cleaning chambers 6 and a drying chamber 7 for drying the substrate W after rinsing with pure water. An openable shutter 8 is provided between the processing chambers. The shutter 8A is provided between the standby chamber 4 and the first cleaning chamber 5, and the shutter 8A is provided between the first cleaning chamber 5 and the second cleaning chamber 6. A shutter 8C is disposed between the shutter 8B, the second cleaning chamber 6 and the drying chamber 7.

  The standby chamber 4, the first cleaning chamber 5, the second cleaning chamber 6, and the drying chamber 7 hold the substrate W with the mounting surface of the substrate W facing upward on the bottom side of each processing chamber. For example, pin chuck type substrate holding portions 9 (9A, 9B, 9C, 9D) are provided, respectively.

  Further, although not shown here, a transfer robot (transfer means) for transferring the substrate W in the horizontal direction between the process chambers with the surface of the substrate facing upward is disposed in the process chamber. Yes. This transfer robot transfers the substrate W linearly toward the substrate holding unit 9 in the adjacent processing chamber in a state where, for example, the substrate W is placed and held from the substrate holding unit 9 in the processing chamber. As a result, the shower head, which will be described later, also moves in a state of being opposed to the substrate transported by the transport robot, and is thus configured to move linearly.

  Here, an example of a transfer robot that transfers the substrate W in a state where the substrate W is placed and held will be described, but the holding mode of the substrate W only needs to be transferred with the surface of the substrate W facing upward. For example, the transfer robot may be configured in an arm shape and transferred with the edge of the substrate W being sandwiched. Here, an example in which the transfer robot transfers the substrate W linearly between the substrate holding units will be described. However, the transfer path is not limited to this, and for example, the substrate W is formed in an arc shape connecting the substrate holding units 9. It may be conveyed. In this case, the shower head described later also moves in an arc shape.

  Further, in the standby chamber 4, the first cleaning chamber 5, and the second cleaning chamber 6, shower heads 10 (10A, 10B, 10C) are arranged to face each other above the substrate holding portions 9A, 9B, 9C, respectively. Yes. A storage tank 11 (11A, 11B, 11C) in which liquid supplied from the shower head 10 to the surface of the substrate W is stored is connected to each shower head 10 via a pipe 12 (12A, 12B, 12C). ing. Each pipe 12 is connected to a freely openable valve 13 (13A, 13B, 13C).

  Each storage tank 11 is configured to be supplied with a liquid selected from pure water, a chemical solution, and a surfactant, and stores these alone or in combination. Here, for example, the storage tank 11A has pure water, the storage tank 11B has a chemical solution for removing polishing residues on the surface of the substrate W in the first cleaning chamber 5, and the storage tank 11C has a chemical solution in the second cleaning chamber 6. It is assumed that pure water for rinsing is filled. Then, in the first cleaning chamber 5, the polishing residue is removed by the chemical solution supplied from the shower head 10B, and in the second cleaning chamber 6, the pure water rinse of the surface of the substrate W is performed by the pure water supplied from the shower head 10C. Will be.

  Here, it is preferable that the pure water used for the series of cleaning treatments is deaerated in order to prevent generation of watermarks due to oxygen in the pure water. In this case, a degassing mechanism may be provided in the storage tank 11, or the degassed pure water may be configured to flow into the storage tank 11.

  Further, a drain pipe 14 (14A) for discharging the liquid supplied from each shower head 10 is provided below the standby chamber 4, the first cleaning chamber 5, the second cleaning chamber 6, and the drying chamber 7 described above. , 14B, 14C, 14D).

  The drying chamber 7 is configured to be able to supply an inert gas. For example, an inert gas supply nozzle 15 is provided above the drying chamber 7. The gas supply nozzle 15 is connected to an inert gas storage tank 16 via a pipe 17, and a valve 18 that can be freely opened is provided in the pipe 17. A gate valve 19 for carrying out the substrate W after the drying process is provided on the side wall of the drying chamber 7, and the substrate W carried out from the gate valve 19 is mounted on the carrier 20.

  Here, the board | substrate holding | maintenance part 9 and the shower head 10 which were mentioned above are demonstrated in detail.

  First, as shown in the plan view of FIG. 2A, the substrate holding unit 9 includes support pins 21 for pressing the edge of the substrate W and fixing the substrate W, and the substrate W to be held is fixed. For example, six support pins 21 are arranged substantially evenly on the periphery. Here, as shown in the XX ′ cross-sectional view of FIG. 2B, the six support pins 21 are converged on the support shaft 22 arranged at the center of the support pins 21, and the substrate is held. The part 9 is configured to be rotatable around the support shaft 22 while keeping the held substrate W horizontal. Further, the substrate holding unit 9 is configured such that the front surface side and the rear surface side, which are the processing surfaces of the substrate W, do not contact the support pins 21 in a state where the substrate W is fixed by the support pins 21.

  On the other hand, as shown in FIG. 3A, each shower head 10 is configured to supply liquid toward the entire surface of the substrate W held by the substrate holding unit 9 or the transfer robot (not shown). A plurality of cylindrical supply ports 23 are arranged on the front end surface. The diameter of the supply port 23 is preferably about 1 mm to 8 mm in consideration of liquid sneaking around the substrate W surface and liquid consumption. And as shown to the enlarged view of the area | region B, the cylindrical supply port 23 is comprised by the angle with respect to the front end surface of the shower head 10 variably. Thereby, the liquid supply angle can be adjusted in accordance with the size of the substrate W and the wraparound state of the liquid depending on the surface state (hydrophobicity) of the surface W, and the liquid is efficiently supplied to the entire surface of the substrate W. be able to. As shown in FIG. 4B, the supply ports 23 are preferably arranged evenly over the entire front end surface of the shower head 10.

  Here, an example in which a plurality of cylindrical supply ports 23 are arranged on the front end surface of the shower head 10 has been described. However, a plurality of holes are arranged as supply ports 23 on the front end surface of the shower head 10. It may be a configuration. Furthermore, the nozzle shape is not particularly limited as long as it is a nozzle that can supply liquid toward the entire surface of the substrate W.

  Further, in the first cleaning chamber 5 and the second cleaning chamber 6 described with reference to FIG. 1, as shown in FIG. 4A, the chemical solution is applied to the back surface side of the substrate W held by the substrate holding portion 9. A fixed nozzle 25 to be supplied, and two roll-type cleaning brushes 26 are provided above and below the substrate W held by the substrate holder 9 when cleaning the substrate W, and clean the front and back surfaces of the substrate W. ing.

  The fixed nozzle 25 is disposed between the support pins 21 of the substrate holding unit 9 with one end side facing the back side of the substrate W held by the substrate holding unit 9, and the other end side is the fixed nozzle 25. Is connected to the same storage tank 11 as the shower head 10 of the processing chamber in which is disposed.

  On the other hand, the roll-type cleaning brush 26 disposed on the upper side of the substrate W is disposed in a region around the substrate holding unit 9 and is configured to be movable in the vertical direction and the horizontal direction. The roll-type cleaning brush 26 disposed on the lower side of the substrate W is disposed, for example, on the support shaft 22 of the substrate holding unit 9 so as to be surrounded by the support pins 21, and is configured to be movable in the vertical direction. ing.

  As shown in this figure, when the substrate W is arranged on the substrate holding part 9, the chemical solution is supplied from the shower head 10 and the fixed nozzle 25 toward the substrate W. At this time, the upper roll-type cleaning brush 26 moves in the horizontal direction from the periphery of the substrate holding unit 9 toward the upper side of the substrate W while being separated from the substrate W, and then moves downward to move the substrate W. It will be in contact with the surface. Further, the lower roll-type cleaning brush 26 moves upward and comes into contact with the back surface of the substrate W. In this state, the roll-type cleaning brush 26 is rotated about the brush axis to clean the front and back surfaces of the substrate W rotating in the horizontal direction.

  Next, as shown in FIG. 4B, at the end of cleaning, the upper roll-type cleaning brush 26 moves upward and the lower roll-type cleaning brush 26 moves downward to be separated from the substrate W. To do. Thereafter, as shown in FIG. 4C, the upper roll-type cleaning brush 26 moves in the horizontal direction so as not to drip on the surface of the substrate W, and returns to a region around the substrate holding unit 9.

  As a characteristic configuration of the present invention, as shown in FIG. 5A, each shower head 10A, 10B, 10C is movable in the horizontal direction, and is configured to sequentially shift in each processing chamber. Yes. The shower heads 10A, 10B, and 10C are respectively connected to rails 27 that are arranged in communication with the processing chambers along the inner side walls of the processing chambers, and the substrate holders 9 ( The upper position above (see FIG. 1) is set as the home position, and the position is moved in the horizontal direction to the position above the substrate holding part 9 in one of the adjacent processing chambers and sequentially shifted.

  Specifically, the shower head 10A moves to the upper position of the substrate holding portion 9B (see FIG. 1) of the first cleaning chamber 5 with the upper position of the substrate holding portion 9A (see FIG. 1) of the standby chamber 4 as the home position. Similarly, the shower head 10B moves to the upper position of the substrate holding portion 9B of the first cleaning chamber 5 and moves to the upper position of the substrate holding portion 9C of the second cleaning chamber 6 (see FIG. 1). Further, the shower head 10 </ b> C moves to the upper position of the substrate holder 9 </ b> C of the second cleaning chamber 6 and moves to the upper position of the substrate holder 9 </ b> D of the drying chamber 7.

  The shower heads 10A, 10B, and 10C not only perform surface treatment by supplying liquid to the surface of the substrate W in each processing chamber, but also move while facing the substrate W transported by the transport means. Then, a liquid is supplied to the surface of the substrate W. For this reason, as shown in the YY ′ cross-sectional view of FIG. 5B, the shutter 8 disposed between the processing chambers passes at least the shower head 10 shown in the region A and the substrate W on the transfer robot. It is configured to let you.

  Further, as shown in the figure, at the home position of each shower head 10, a columnar support 28 is arranged in a vertical direction in a state orthogonal to the rail 27. In each home position, the shower head 10 is configured to move up and down along the support 28. This prevents the shower heads 10 from colliding with each other when the shower heads 10 are moved, and the substrate W and the shower when the substrate W is cleaned in the first cleaning chamber 5 and the second cleaning chamber 6, for example. The distance from the head 10 can be adjusted.

  As described above, in the substrate processing apparatus of the present embodiment, since the liquid is supplied from the shower head toward the entire surface of the substrate W transported by the transport unit, the entire surface is a liquid film between the processing chambers. It becomes possible to transport the substrate W in a state covered with.

  The substrate processing apparatus described above is an example of the present invention, and the number of processing chambers and the number of shower heads 10 are not particularly limited. In this embodiment, an example in which two cleaning chambers are provided has been described. However, for example, three cleaning chambers may be provided. In this case, for example, the substrate W may be cleaned using different chemical solutions in the first cleaning chamber and the second cleaning chamber, and then the substrate W may be rinsed with pure water in the third cleaning chamber. Further, in the substrate processing apparatus of the present embodiment, three shower heads 10 are arranged, but the number of shower heads 10 may be any number, considering standby and transfer of the substrate W according to the apparatus configuration, It is preferable to install. However, it is preferable to provide the plurality of shower heads 10 and sequentially shift the substrate W because the cleaning process of the substrate W can be performed efficiently. Further, the liquid supplied from the shower head 10 is not limited to the example of the above-described embodiment, and is appropriately set by the surface treatment of the substrate W.

  Further, in the substrate processing apparatus described above, an example in which liquid is supplied from the movable shower head 10 to the surface of the substrate W being transferred, as well as liquid for performing surface treatment of the substrate W, has been described. However, the shower head 10 may be configured to supply the liquid only to the surface of the substrate W being transported. In this case, for example, pure water is supplied from the movable shower head 10 to the entire surface of the substrate W only while the substrate W is being transported by the transport robot. For example, a chemical solution is supplied from the fixed nozzle to the surface of the substrate W. However, it is preferable that the shower head 10 serve both as the liquid supply to the surface of the substrate W being transferred and the liquid supply during the surface treatment of the substrate in each processing chamber because the apparatus configuration is simplified.

  Furthermore, in the substrate processing apparatus of the present embodiment, the example in which the support 28 is disposed at the home position of each shower head 10 and only the shower head 10 moves in the horizontal direction along the rail 27 has been described. 10 may be fixed to the support 28 and move together with the support 28. In this case, for example, the rail 27 is disposed in communication with each processing chamber on the back side of the bottom of each processing chamber, and the support 28 is configured to move on the rail 27. However, for example, when shifting from the shower head 10A to the shower head 10B, the support 28 to which the shower head 10B is fixed is already disposed at the home position of the shower head 10B in the first cleaning chamber 5, so the shower head 10A The shower head 10A is disposed below the shower head 10B by rotating the shower head 10A in the horizontal direction about the support body 28 to which is fixed.

  Next, an example of the cleaning process of the substrate W using the substrate processing apparatus as described above will be described with reference to plan views and cross-sectional views of FIGS. In the present embodiment, for example, after a Cu film is formed on the Low-k film in a state where a recess provided in the Low-k film on the substrate W is embedded, the surface of the Low-k film is exposed by CMP. An example in which a cleaning process for removing polishing residues is performed on the substrate W after the Cu film is removed until described.

  First, as shown in FIG. 6A, the substrate W that has been polished in the polishing chamber 2 ′ (see FIG. 1) is placed on the substrate holding portion 9A of the standby chamber 4 with the surface of the substrate W facing upward. Wear it facing. Thereafter, in order to prevent the substrate W from being partially dried, pure water is supplied from the shower head 10 </ b> A toward the surface of the substrate W. At this time, in order to prevent the surface of the substrate W from running out of water, it is preferable not to rotate the substrate holding portion 9A. This makes it possible to wait for the substrate W before the cleaning process in a state where the entire surface of the substrate W is covered with the liquid film.

  Next, as shown in FIG. 6B, the transfer robot 29 causes the substrate W on the substrate holding portion 9A to be horizontally directed toward the first cleaning chamber 5 with the surface of the substrate W facing upward. Move. Accordingly, the shower head 10 </ b> A also moves in the horizontal direction toward the first cleaning chamber 5 while supplying pure water to the entire surface of the substrate W in a state of being opposed to the substrate W transferred to the transfer robot 29. Thereby, the substrate W is transported in a state where a liquid film is formed on the surface of the substrate W. At this time, in order to efficiently supply pure water to the surface of the substrate W and suppress scattering of pure water into the apparatus, the substrate W and the shower head 10A can be formed within a range in which a liquid film can be formed on the surface of the substrate W. The distance is preferably as short as possible. Then, the shutter 8A (see FIG. 1) between the standby chamber 4 and the first cleaning chamber 5 is opened, and the shower head 10A and the substrate W on the transfer robot 29 are carried into the first cleaning chamber 5. After loading the substrate W, the shutter 8A is closed.

  Next, as shown in FIG. 7C, the substrate W on the transfer robot 29 (see FIG. 6B) is mounted on the substrate holding part 9 </ b> B of the first cleaning chamber 5. Accordingly, the shower head 10A is also disposed above the substrate holding portion 9B. At this time, the shower head 10B whose home position is the upper part of the substrate holding part 9B of the first cleaning chamber 5 is disposed in advance at a position higher than the shower head 10A. Accordingly, the shower head 10A is arranged in a state of being overlapped below the shower head 10B, and it is possible to avoid a collision due to the movement of the shower head 10A. In addition, roll-type cleaning brushes 26 are disposed above and below the substrate W mounted on the substrate holding unit 9B.

  Immediately after the substrate W is mounted on the substrate holding portion 9B, as shown in FIG. 7D, the supply of pure water from the shower head 10A is stopped, and the shutter 8A (see FIG. 1) is opened. The shower head 10A is quickly returned to the upper part of the substrate holding part 9A of the standby chamber 4 at the home position. At the same time, supply of the chemical solution from the shower head 10B is started, and the shower head 10B is lowered to an appropriate position while supplying the chemical solution to the surface of the substrate W while the substrate holding portion 9B is rotated. The cleaning process is performed by rotating the cleaning brush 26. At this time, it is preferable that the shower head 10 </ b> B is disposed so as to be as close as possible to the substrate W held by the substrate holding portion 9 </ b> B within a range that does not affect the operation of the roll-type cleaning brush 26. Thereby, the chemical solution is efficiently supplied to the surface of the substrate W, and the scattering of the chemical solution into the apparatus is suppressed.

  In the subsequent steps, the shower heads 10B and 10C operate in the same manner as the shower head 10A described with reference to FIGS. 6 (a) to 7 (d). That is, after the cleaning process of the substrate W in the first cleaning chamber 5 is completed, the substrate W held by the transfer robot 29 is transferred to the surface of the substrate W by the transfer robot 29 as shown in FIG. Is moved in the horizontal direction toward the second cleaning chamber 6 in a state of facing upward. Accordingly, the shower head 10 </ b> B also moves in the horizontal direction toward the second cleaning chamber 6 while supplying a chemical solution to the entire surface of the substrate W in a state of being opposed to the substrate W transferred to the transfer robot 29. Then, the shutter 8B (see FIG. 1) between the first cleaning chamber 5 and the second cleaning chamber 6 is opened, and the shower head 10B and the substrate W on the transfer robot 29 are carried into the second cleaning chamber 6. After loading the substrate W, the shutter 8B is closed.

  Next, as shown in FIG. 8 (f), the substrate W on the transfer robot 29 (see FIG. 8 (e)) is mounted on the substrate holding part 9 C of the second cleaning chamber 6. Accordingly, the shower head 10B is also disposed above the substrate holding part 9C. At this time, the shower head 10 </ b> C whose home position is above the substrate holding part 9 </ b> C of the second cleaning chamber 5 is arranged in advance at a position higher than the shower head 10 </ b> B. In addition, roll-type cleaning brushes 26 are disposed above and below the substrate W mounted on the substrate holding portion 9C.

  Immediately after mounting the substrate W on the substrate holding part 9C, as shown in FIG. 9G, the supply of pure water from the shower head 10B is stopped, the shutter 8B is opened, and the shower head 10B is at the home position. The first cleaning chamber 5 is quickly returned to above the substrate holding portion 9B. At the same time, supply of pure water from the shower head 10C is started, and the shower head 10C is lowered to an appropriate position while supplying pure water to the entire surface of the substrate W while the substrate holding portion 10C is rotated. The roll-type cleaning brush 26 is rotated to perform the cleaning process.

  Next, as shown in FIG. 9 (h), the transport robot 29 transports the substrate W from the substrate holding portion 9C toward the drying chamber 7 in the horizontal direction with the surface of the substrate W facing upward. Accordingly, the shower head 10 </ b> C is also moved in the horizontal direction toward the drying chamber 7 while supplying pure water in a state where the shower head 10 </ b> C is opposed to the substrate W transferred to the transfer robot 29. Then, the shutter 8C (see FIG. 1) between the second cleaning chamber 6 and the drying chamber 7 is opened, and the shower head 10C and the substrate W on the transfer robot 29 are carried into the drying chamber 7. After loading the substrate W, the shutter 8C is closed.

  Next, as shown in FIG. 10 (i), the substrate W on the transfer robot 29 (see FIG. 9 (h)) is mounted on the substrate holding part 9 </ b> D of the drying chamber 7. Thereafter, pure water is supplied onto the substrate W from the shower head 10 </ b> C until the substrate holding unit 9 </ b> D is rotated until immediately before the drying process. Thereby, the surface of the substrate W is covered with the liquid film until just before the drying process.

  Subsequently, as shown in FIG. 10 (j), the supply of pure water from the shower head 10C is stopped immediately before the drying process, the shutter 8C (see FIG. 1) is opened, and the shower head 10C is moved to the home position. The substrate is quickly returned to above the substrate holding part 9C in the second cleaning chamber 6.

  Thereafter, as shown in FIG. 11, the shutter 8C (see FIG. 1) is closed, and the drying chamber 7 is sealed. Thereafter, air in the drying chamber 7 is purged by supplying an inert gas such as nitrogen gas from the gas supply nozzle 15 described with reference to FIG. 1, and the surface of the substrate W is dried in an inert gas atmosphere. Process. By performing the drying treatment in an inert gas atmosphere, it is possible to prevent the influence of moisture in the air, and thus the drying efficiency is improved. Moreover, since the influence of oxygen in the atmosphere can be prevented, the generation of a watermark is reliably prevented. As described above, a series of cleaning processes is completed.

  This series of cleaning processes is performed continuously. For example, as described with reference to FIG. 7D, the shower head 10 </ b> A returns to the home position of the standby chamber 4 and then waits for the substrate W to be subjected to the next surface treatment. It is preferably mounted on the substrate holding part 9A of the chamber 4.

  According to the substrate processing apparatus and the substrate processing method as described above, since the shower head 10 that supplies the liquid toward the entire surface of the substrate W being transferred is provided, the entire surface is a liquid film between the processing chambers. The substrate W is transported in a covered state. As a result, even if a hydrophobic material such as a low-k film is exposed on the surface of the substrate W, a three-phase interface between air, water, and the substrate W is formed by partial drying of the surface of the substrate W being transferred. Therefore, it is possible to prevent the occurrence of a watermark. Therefore, the yield and quality of elements formed on the substrate W can be improved.

  Further, since the chemical solution or pure water is supplied from the shower head 10 that moves in a state of being opposed to the substrate W that is transported with the surface facing upward by the transport robot 29, the chemical solution or pure water is supplied to the entire surface of the substrate W. Pure water can be supplied efficiently. As a result, compared to the case where chemical solution or pure water is supplied from the fixed nozzle during substrate transport, the amount of chemical solution or pure water used can be reduced, manufacturing costs can be suppressed, and productivity can be improved. Can do. Further, since the chemical liquid or pure water is supplied from the shower head 10 that moves in a state of being opposed to the substrate W being transferred, the chemical liquid and pure water are prevented from scattering into the apparatus. Can also be suppressed. Furthermore, since generation of mist in the apparatus is suppressed as compared with the case where chemical solution or pure water is supplied from the fixed nozzle during the conveyance of the substrate, generation of watermark due to adhesion of mist can be prevented.

  In this embodiment, the example in which pure water is supplied from the shower head 10A, chemical liquid from the shower head 10B, and pure water is supplied from the shower head 10C has been described. However, the liquid supplied from the shower head 10 contains a surfactant. You may let them. Thereby, even if the surface of the substrate W is made of a hydrophobic material, the entire surface of the substrate W can be reliably covered with the liquid film, which is preferable. In this case, as the surfactant, for example, an anionic, cationic, amphoteric, nonionic surfactant, or a combination thereof is used at a concentration of 0.0001 to 0.1 wt%. Further, an anticorrosive agent such as benzotriazole (BTA) may be added to the liquid supplied from the shower head 10 in order to prevent corrosion of Cu wiring exposed on the surface of the substrate W.

  Furthermore, in the substrate processing method of the present embodiment, the example in which the liquid supplied from each shower head 10 is fixed to one has been described, but the liquid supplied in the middle may be switched. For example, in the process described with reference to FIGS. 7D to 8E, after cleaning the surface of the substrate W by supplying a chemical solution from the shower head 10 </ b> B in the first cleaning chamber 5, pure water rinsing is performed. When transporting to the second cleaning chamber 6 to be performed, the liquid supplied from the shower head 10B may be switched from chemical to pure water, and pure water may be supplied to the entire surface of the substrate W being transported.

1 is an overall configuration diagram for explaining an embodiment of a substrate processing apparatus of the present invention. It is the top view (a) and sectional drawing (b) of the substrate holding part for demonstrating embodiment which concerns on the substrate processing apparatus of this invention. It is sectional drawing (a) of the shower head for demonstrating embodiment which concerns on the substrate processing apparatus of this invention, and the top view (b) of the shower head front-end | tip. It is sectional process drawing explaining operation | movement of the roll type | mold washing brush for demonstrating embodiment which concerns on the substrate processing apparatus of this invention. It is the top view (a) and sectional drawing (b) for demonstrating the principal part of embodiment which concerns on the substrate processing apparatus of this invention. It is the top view and sectional view for explaining the embodiment concerning the substrate processing method of the present invention (the 1). It is the top view and sectional drawing for demonstrating embodiment which concerns on the substrate processing method of this invention (the 2). It is the top view and sectional drawing for demonstrating embodiment which concerns on the substrate processing method of this invention (the 3). It is the top view and sectional drawing for demonstrating embodiment which concerns on the substrate processing method of this invention (the 4). It is the top view and sectional drawing for demonstrating embodiment which concerns on the substrate processing method of this invention (the 5). It is the top view and sectional drawing for demonstrating embodiment which concerns on the substrate processing method of this invention (the 6). It is a top view for demonstrating the conventional substrate processing apparatus and the substrate processing method. It is a top view for demonstrating the subject of the conventional substrate processing apparatus and a substrate processing method.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... CMP apparatus (substrate processing apparatus), 4 ... Standby chamber, 5 ... 1st cleaning chamber, 6 ... 2nd cleaning chamber, 7 ... Drying chamber, 10 (10A, 10B, 10C) ... Shower head (nozzle), 29 ... Transport robot (transport means)

Claims (7)

A plurality of processing chambers for processing the surface of the substrate;
Conveying means for conveying the substrate with the surface of the substrate facing upward between the plurality of processing chambers;
A substrate processing apparatus comprising: a nozzle that supplies a liquid toward the entire surface of the substrate while moving in a state of being opposed to the substrate conveyed by the conveying means. The substrate processing apparatus according to claim 1, wherein a surface treatment of the substrate is performed by the liquid supplied from the nozzle in the processing chamber. The substrate processing apparatus according to claim 1, wherein the nozzle has a shower shape. A plurality of the nozzles;
The substrate processing apparatus according to claim 1, wherein the plurality of nozzles are configured to sequentially shift and move in each processing chamber. In a substrate processing method having a plurality of steps of processing the surface of a substrate,
The substrate processing method, wherein the substrate is moved upward between the steps, and a liquid is supplied to the entire surface of the substrate from a nozzle that moves while being opposed to the substrate. The substrate processing method according to claim 5, wherein a surface of the substrate is made of a hydrophobic material. The substrate processing method according to claim 5, wherein the liquid contains a surfactant.

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