JP2004181591A - Single crystal diamond cutting tool - Google Patents

Single crystal diamond cutting tool Download PDF

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Publication number
JP2004181591A
JP2004181591A JP2002353121A JP2002353121A JP2004181591A JP 2004181591 A JP2004181591 A JP 2004181591A JP 2002353121 A JP2002353121 A JP 2002353121A JP 2002353121 A JP2002353121 A JP 2002353121A JP 2004181591 A JP2004181591 A JP 2004181591A
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Prior art keywords
cutting
cutting tool
single crystal
crystal diamond
angle
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Pending
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JP2002353121A
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Japanese (ja)
Inventor
Hiroshi Shimizu
洋 清水
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SANKO SEIKI KK
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SANKO SEIKI KK
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Priority to JP2002353121A priority Critical patent/JP2004181591A/en
Publication of JP2004181591A publication Critical patent/JP2004181591A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To perform ultra-precision machining of a sealing face currently carried out manually at one process using a single crystal diamond cutting tool. <P>SOLUTION: A single crystal diamond flat cutting tool (cutting tool) is that when the width of the edge of a blade of a cutting tool is set to 1.6-11 mm, a feeding rate is preferably 1,500-2,500 mm/min, a distance L2 between a flank 2-3 which makes a clearance angle β 3 degrees and a dihedral angle 2-4 from a tip portion is preferably 0.1-0.2 mm, by preferably providing a reversing flank 2-2 having a reversing clearance angle α of 10'-30' (a height difference between the edge of a blade and a dihedral angle portion t=0.3-1.7 micrometers), since the depth of the cutting is preferably made 2-5 μm, without the chattering of the tool and the peeling of chips, a tearing action between a cutting face and the chips is carried out good, and also burnish finishing is carried out by the dihedral angle portion. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【0001】
【発明が属する技術分野】
本発明は、単結晶ダイヤモンドを切削加工工具のチップに用いた超精密切削加工方法、その工具、及び、その加工方法によって製作された製品に関する。より具体的には、半導体製造装置その他において高真空を保持するための真空チャンバー用のシール部材又はパッキン取り付け溝の鏡面加工などに用いるための切削加工方法、その工具、及び、その製品に関する。
【0002】
【従来の技術】
従来、その様な超精密加工においては、エンドミルで溝を切削した後、仕上げ加工には目的の表面粗さに仕上げるためにヘールバイトにより下仕上げを施した後さらに数種類のやすり♯800、♯1200、♯2000、♯3000等を掛け、最後に液状研磨剤で研磨するという手間のかかるやり方をしていた。
【0003】
【発明が解決しようとする課題】
本発明は、所望の表面粗さにするために多くの工程と手間を必要とした従来の方法に代わり溝の仕上げ加工を1行程で短時間にそして高精度の加工を可能とする切削加工方法、そのために使用される単結晶ダイヤモンド切削加工工具、及び、その様な超精密切削加工を施されたアルミニウム合金製品を提供することを目的とする。
【0004】
【課題を解決するための手段】
本発明の課題を解決するための第1の手段は、逆逃げ角αを10’〜30’とし、刃先部から稜角までの距離Lを0.1〜0.2mmとした逆逃げ面を有するアルミニウム合金用単結晶ダイヤモンド平バイトである。
本発明の課題を解決するための第2の手段は、逆逃げ角αを10’〜30’とし、刃先部から稜角までの距離Lを0.1〜0.2mmとした逆逃げ面を有する単結晶ダイヤモンド平バイトを用い、送り速度を1500〜2500mm/minとし、切り込み深さを2〜5μmとしてアルミニウム合金製品を超精密切削する方法である。
本発明の課題を解決するための第3の手段は、逆逃げ角αを10’〜30’とし、刃先部から稜角までの距離Lを0.1〜0.2mmとした逆逃げ面を有する単結晶ダイヤモンド平バイトを用い、送り速度を1500〜2500mm/minとし、切り込み深さを2〜5μmとして超精密切削された幅1〜11mmの環状シール面を有するアルミニウム合金製品である。
【0005】
【発明の実施の形態】
本発明にかかる単結晶ダイヤモンド平バイト(切削加工工具)は、バイト刃先幅を1.6〜11mmとした場合、好ましくは1500〜2500mm/minの送り速度で、逃げ角を3°とした逃げ面と、先端部から稜角までの距離が好ましくは0.1〜0.2mmで、好ましくは10’〜30’の逆逃げ角(刃先と稜角位置との高さの差t=0.3〜1.7μm)を有する逆逃げ面を設け、好ましくは2〜5μmの切り込み深さにしているので、工具のびびりや切り屑のむしれ無しに、切削加工面と切りくずとの間の切り裂き作用が良好に行われ、また、稜角部分によるバニシ仕上げがなされる。
なお、逃げ角は、一応3°としたが、逃げ面が被切削面に接触しないものであればよいと考えている。
【0006】
【実施例】
図1は、本発明の1実施例における切削加工工具の立面図を示す。1は、シャンク、2は、単結晶ダイヤモンドチップである。
図2は、同じく本発明の1実施例における切削加工工具1の平面図を示す。1は、切削加工工具、2は、単結晶ダイヤモンドチップ、3は、シャンクである。
図3は、本発明の1実施例における単結晶ダイヤモンドチップ2の側面図を示す。2−1は、逆逃げ面、2−2は、逃げ面、2−3は、稜角、2−4は、すくい面、2−5は、後側面、2−6は、頂面、2−7は、左側面である。αは、逆逃げ角、βは、逃げ角である。すくい面2−4のすくい角は0°で、シャンク1の中心軸を含む面に一致させている。逆逃げ角αは、10’〜30’、逃げ角βは、3°とした。
【0007】
すくい面2−4と稜角2−3との距離L2は、チップ2の幅L1が1.6〜11.0mmの場合において、好ましくは0.1〜0.2mmである。これ以上小さいとびびりが生じやすくなり、これ以上大きいとむしれが生じやすくなる。チップ2の大きさは、勿論、生産される単結晶ダイヤモンドの大きさによって決まる。
図4は、ダイヤモンドチップ2の平面図を示す。2−3は、稜角、2−4は、すくい面、2−5は、後側面、2−6は、頂面、2−7は、左又は右の側面である。γは、側面逃がし角で1°とした。チップ2の厚さL3は、5〜10mm程度にした。角部のアール2−8は、0.2mmとし、バリの発生を防ぐようにした。
図5は、ダイヤモンドチップ2の底面図を示す。2−1は、逆逃げ面、2−2は、逃げ面、2−3は、稜角、2−7は、左右の側面、δは、側面逃げ角で、切削すべきコーナー部の半径の大きさによって決まる。
【0008】
例えば、ダイヤモンドチップ幅が5mmの場合、ダイヤモンドチップの厚さLは、5〜10mm、L1は、0.2mm、逆逃げ角αは、10’〜40’、好ましくは15’〜30’、逃げ角βは、3°、側面逃げ角γは、1°、δは、1°30’とした。アルミニウム合金製品、例えば、真空チャンバーなど、の材質は、JIS−A5052、JIS−A6063のものを試みた。
本発明の超精密切削加工の1実施例について説明する。半導体製造装置に用いる真空チャンバーのシール(Oリング)取付面の加工においては、エンドミルで十点平均粗さRz=3μmに周辺部分を含めて加工した上で、Oリングに接触するシール接触部分を本発明にかかる切削工具1で切削した。この表面は、粗さ(R)とうねり(W)の混合した不規則なものである。このような表面の凹凸を取り除き、所定の表面粗さを得るために切削工具1を3回程度周回させ、切り込み位置を越えたところで切削工具1を逃がすようにした。
【0009】
所定の切り込み深さに達するまでのアプローチは100mmとした。L1=0.2mmでの逆逃げ面の先端部の高さhは、α=15’で0.9μm、α=30’で1.7μmである。切り屑は、何れの場合も工具に接触する面が鏡面で、切り込み量5μmでは、厚さが0.012〜0.015mm(マイクロメーターで測定)の薄い連続した1枚の鉋屑状を呈していた。アルミニウム合金に対する切削剤として水溶性油のエマルジョン液や化学薬品の水溶液や鉱油などを用いる。この水溶性油は、安価で冷却効果が高くチップの除去や構成刃先や溶着の発生防止効果が高い。被切削加工材として、JIS−A5052やJIS−A6063などのアルミニウム合金を使用した。ダイヤモンドは、熱伝導率が高く、金属との摩擦係数も小さいが、鉄とは反応しやすい。単結晶ダイヤモンドバイトは、アルミニウム・マグネシウム合金などの軽金属や銅合金、貴金属などの切削に用いられることが多いが、チタン、鉄、ニッケル、モリブデン、タングステンなどの加工には向いていないとされている。
【0010】
本実施例において、逆逃げ角を15’とし、バイト刃先幅3.0mm、距離L2=0.1mmの切削工具1で切り込み深さを5μm、送り速度をF2000(mm/min)として切削し、非接触式面粗さ測定機(東京精密社製SURFCOM 1800D、以下、「面粗さ測定機」と云う。)で測定(JIS−1982規格、断面測定、測定長さ=0.25mm)したところ、表面粗さは、周(長手)方向でRmax=0.304μm、Rz=0.273μm、横断方向でRmax=0.368μm、Rz=0.368μmであった。
同様にして、バイト刃先幅5.0mm、距離L2=0.2mmの切削工具1で切り込み深さを5μm、送り速度をF2000(mm/min)として切削した。同様に面粗さ測定機で測定したところ、表面粗さは、周方向でRmax=0.336μm、Rz=0.320μm、横断方向でRmax=0.372μm、Rz=0.295μmであった。
【0011】
同様にして、バイト刃先幅10.0mm、距離L2=0.2mmの切削工具1で切り込み深さを5μm、送り速度をF1500(mm/min)として切削した。同様に面粗さ測定機で測定したところ、表面粗さは、周方向でRmax=0.364μm、Rz=0.317μm、横断方向でRmax=0.324μm、Rz=0.287μmであった。
図6は、バイト刃先幅、送り速度、及び、切り込み深さを一覧表にしたものである。送り速度がこれ以上になると、機械特性により形状(コーナー)がだれていまい、又、この速度以下では、悪化(むしれ)を生じる。切り込み深さは、刃具欠損の危険性から、これを超える深さは未挑戦である。なお、バイト刃先幅1.6mmでは、距離L2は、0.1mmとしている。
【0012】
【発明の効果】
本発明によれば、1工程で、一定幅において前工程の表面粗さとうねりを取り去り所望の面粗さを得ることが出来る。工具のびびりや切り屑のむしれ無しに、切削加工面と切りくずとの間の切り裂き作用が良好に行われ、また、稜角部分によってバニシ仕上げがなされる。
【図面の簡単な説明】
【図1】本発明の1実施例における切削加工工具の立面図を示す。
【図2】本発明の1実施例における切削加工工具1の平面図を示す。
【図3】本発明の1実施例における単結晶ダイヤモンドチップ2の側面図を示す。
【図4】本発明の1実施例における単結晶ダイヤモンドチップ2の平面図を示す。
【図5】本発明の1実施例における単結晶ダイヤモンドチップ2の底面図を示す。
【図6】バイト刃先幅、送り速度、及び、切り込み深さの一覧表である。
【符号の説明】
1 切削加工工具
2 単結晶ダイヤモンドチップ
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an ultra-precision cutting method using a single crystal diamond as a tip of a cutting tool, the tool, and a product manufactured by the cutting method. More specifically, the present invention relates to a cutting method for use in a mirror processing of a sealing member or a packing mounting groove for a vacuum chamber for maintaining a high vacuum in a semiconductor manufacturing apparatus or the like, a tool therefor, and a product thereof.
[0002]
[Prior art]
Conventionally, in such ultra-precision machining, after cutting a groove with an end mill, finishing is performed with a hail bite to finish the surface to a desired surface roughness, and then several types of files # 800, # 1200 , $ 2000, $ 3000, etc., and finally polishing with a liquid abrasive.
[0003]
[Problems to be solved by the invention]
SUMMARY OF THE INVENTION The present invention provides a cutting method capable of performing high-precision machining in a short time in a single stroke, instead of the conventional method requiring many steps and labor to obtain a desired surface roughness. It is an object of the present invention to provide a single-crystal diamond cutting tool used for that purpose, and an aluminum alloy product subjected to such ultra-precision cutting.
[0004]
[Means for Solving the Problems]
The first means for solving the problem of the present invention has a reverse clearance surface with a reverse clearance angle α of 10 ′ to 30 ′ and a distance L from the cutting edge to the ridge angle of 0.1 to 0.2 mm. It is a single crystal diamond flat bite for aluminum alloy.
The second means for solving the problem of the present invention has a reverse clearance surface with a reverse clearance angle α of 10 ′ to 30 ′ and a distance L from the cutting edge to the ridge angle of 0.1 to 0.2 mm. This is a method of ultra-precision cutting of an aluminum alloy product using a single crystal diamond flat bite, a feed rate of 1500 to 2500 mm / min, and a cutting depth of 2 to 5 μm.
A third means for solving the problem of the present invention has a reverse flank where the reverse clearance angle α is 10 ′ to 30 ′ and the distance L from the cutting edge to the ridge angle is 0.1 to 0.2 mm. It is an aluminum alloy product having an annular sealing surface with a width of 1 to 11 mm, which is ultra-precisionly cut using a single crystal diamond flat bite at a feed rate of 1500 to 2500 mm / min and a cutting depth of 2 to 5 μm.
[0005]
BEST MODE FOR CARRYING OUT THE INVENTION
The single crystal diamond flat tool (cutting tool) according to the present invention has a flank with a cutting edge width of 1.6 to 11 mm, preferably at a feed rate of 1500 to 2500 mm / min and a clearance angle of 3 °. And the distance from the tip to the ridge angle is preferably 0.1 to 0.2 mm, and the reverse clearance angle is preferably 10 'to 30' (the difference in height t between the cutting edge and the ridge angle position is t = 0.3 to 1). (7 .mu.m), preferably with a cutting depth of 2 to 5 .mu.m, so that the cutting action between the cutting surface and the chips is reduced without chattering of the tool and chipping of the chips. It is performed well, and burnishing is performed at the corners.
Although the clearance angle was set to 3 ° for the time being, it is considered that the clearance angle may be any as long as the clearance surface does not contact the surface to be cut.
[0006]
【Example】
FIG. 1 shows an elevation view of a cutting tool according to one embodiment of the present invention. 1 is a shank and 2 is a single crystal diamond tip.
FIG. 2 shows a plan view of the cutting tool 1 according to one embodiment of the present invention. 1 is a cutting tool, 2 is a single crystal diamond tip, and 3 is a shank.
FIG. 3 shows a side view of the single crystal diamond tip 2 in one embodiment of the present invention. 2-1 is a reverse flank, 2-2 is a flank, 2-3 is a ridge angle, 2-4 is a rake face, 2-5 is a rear face, 2-6 is a top face, 7 is a left side surface. α is the reverse clearance angle, and β is the clearance angle. The rake angle of the rake face 2-4 is 0 °, which coincides with the face including the central axis of the shank 1. The reverse clearance angle α was 10 ′ to 30 ′, and the clearance angle β was 3 °.
[0007]
The distance L2 between the rake face 2-4 and the ridge angle 2-3 is preferably 0.1 to 0.2 mm when the width L1 of the chip 2 is 1.6 to 11.0 mm. If it is smaller than this, chatter tends to occur, and if it is larger than this, tearing tends to occur. The size of the chip 2 is, of course, determined by the size of the single crystal diamond to be produced.
FIG. 4 shows a plan view of the diamond tip 2. 2-3 is a ridge angle, 2-4 is a rake face, 2-5 is a rear face, 2-6 is a top face, and 2-7 is a left or right side face. γ was set to 1 ° in the side clearance angle. The thickness L3 of the chip 2 was about 5 to 10 mm. The radius 2-8 at the corner was set to 0.2 mm to prevent the generation of burrs.
FIG. 5 shows a bottom view of the diamond tip 2. 2-1 is the reverse flank, 2-2 is the flank, 2-3 is the ridge angle, 2-7 is the left and right side surfaces, δ is the side clearance angle, and the radius of the corner to be cut. Determined by
[0008]
For example, when the diamond tip width is 5 mm, the thickness L of the diamond tip is 5 to 10 mm, L1 is 0.2 mm, and the reverse clearance angle α is 10 ′ to 40 ′, preferably 15 ′ to 30 ′, The angle β was 3 °, the side clearance angle γ was 1 °, and δ was 1 ° 30 ′. As materials for aluminum alloy products, for example, vacuum chambers and the like, JIS-A5052 and JIS-A6063 were tried.
An embodiment of the ultra-precision cutting of the present invention will be described. In processing a seal (O-ring) mounting surface of a vacuum chamber used in a semiconductor manufacturing apparatus, a ten-point average roughness Rz = 3 μm including a peripheral portion is processed by an end mill, and a seal contact portion that contacts the O-ring is processed. Cutting was performed with the cutting tool 1 according to the present invention. This surface is irregular with a mixture of roughness (R) and undulation (W). In order to remove such irregularities on the surface and to obtain a predetermined surface roughness, the cutting tool 1 was rotated about three times, and the cutting tool 1 was released beyond the cutting position.
[0009]
The approach to reaching the predetermined cutting depth was 100 mm. The height h of the tip of the reverse flank when L1 = 0.2 mm is 0.9 μm when α = 15 ′ and 1.7 μm when α = 30 ′. In any case, the chip has a mirror-finished surface that comes into contact with the tool, and has a thin, continuous piece of chipping having a thickness of 0.012 to 0.015 mm (measured by a micrometer) at a cutting depth of 5 μm. Was. As a cutting agent for the aluminum alloy, an emulsion liquid of a water-soluble oil, an aqueous solution of a chemical agent, or a mineral oil is used. This water-soluble oil is inexpensive, has a high cooling effect, and has a high effect of removing chips, preventing the formation of a cutting edge and welding. An aluminum alloy such as JIS-A5052 or JIS-A6063 was used as the material to be cut. Diamond has a high thermal conductivity and a small coefficient of friction with metals, but easily reacts with iron. Single crystal diamond tools are often used for cutting light metals such as aluminum and magnesium alloys, copper alloys, and precious metals, but are not suitable for machining titanium, iron, nickel, molybdenum, tungsten, etc. .
[0010]
In this embodiment, the reverse clearance angle is set to 15 ', and the cutting tool 1 having a cutting edge width of 3.0 mm and a distance L2 of 0.1 mm is cut with a cutting depth of 5 µm and a feed speed of F2000 (mm / min). Measured by a non-contact surface roughness measuring device (SURFCOM 1800D manufactured by Tokyo Seimitsu Co., Ltd .; hereinafter, referred to as “surface roughness measuring device”) (JIS-1982 standard, cross-sectional measurement, measurement length = 0.25 mm) The surface roughness was Rmax = 0.304 μm and Rz = 0.273 μm in the circumferential (longitudinal) direction, and Rmax = 0.368 μm and Rz = 0.368 μm in the transverse direction.
Similarly, cutting was performed with a cutting tool 1 having a cutting edge width of 5.0 mm and a distance L2 of 0.2 mm at a cutting depth of 5 μm and a feed speed of F2000 (mm / min). Similarly, when measured with a surface roughness measuring device, the surface roughness was Rmax = 0.336 μm and Rz = 0.320 μm in the circumferential direction, and Rmax = 0.372 μm and Rz = 0.295 μm in the transverse direction.
[0011]
Similarly, cutting was performed with a cutting tool 1 having a cutting edge width of 10.0 mm and a distance L2 of 0.2 mm at a cutting depth of 5 μm and a feed speed of F1500 (mm / min). Similarly, when measured with a surface roughness measuring device, the surface roughness was Rmax = 0.364 μm and Rz = 0.317 μm in the circumferential direction, and Rmax = 0.324 μm and Rz = 0.287 μm in the transverse direction.
FIG. 6 is a table showing the cutting edge width, the feed speed, and the cutting depth. If the feed speed is higher than this, the shape (corner) will be distorted due to the mechanical characteristics, and if the feed speed is lower than this speed, deterioration will occur. The depth of cut is beyond the challenge due to the risk of cutting tool deficiency. In addition, when the cutting edge width is 1.6 mm, the distance L2 is 0.1 mm.
[0012]
【The invention's effect】
According to the present invention, the desired surface roughness can be obtained by removing the surface roughness and the undulation in the previous step in a certain width in one step. The cutting action between the cutting surface and the chip is performed well without the chattering of the tool and the chipping of the chips, and the burnishing is performed by the corner portion.
[Brief description of the drawings]
FIG. 1 shows an elevation view of a cutting tool according to one embodiment of the present invention.
FIG. 2 shows a plan view of the cutting tool 1 according to one embodiment of the present invention.
FIG. 3 is a side view of the single-crystal diamond tip 2 according to one embodiment of the present invention.
FIG. 4 is a plan view of a single crystal diamond chip 2 according to one embodiment of the present invention.
FIG. 5 is a bottom view of the single crystal diamond tip 2 according to one embodiment of the present invention.
FIG. 6 is a list of a cutting edge width, a feed speed, and a cutting depth.
[Explanation of symbols]
1 cutting tool 2 single crystal diamond tip

Claims (3)

逆逃げ角αを10’〜30’とし、刃先部から稜角までの距離Lを0.1〜0.2mmとした逆逃げ面を有するアルミニウム合金用単結晶ダイヤモンド平バイト。A single crystal diamond flat tool for aluminum alloy having a reverse flank with a reverse clearance angle α of 10 'to 30' and a distance L from the cutting edge to the ridge angle of 0.1 to 0.2 mm. 逆逃げ角αを10’〜30’とし、刃先部から稜角までの距離Lを0.1〜0.2mmとした逆逃げ面を有する単結晶ダイヤモンド平バイトを用い、送り速度を1500〜2500mm/minとし、切り込み深さを2〜5μmとしてアルミニウム合金製品を超精密切削する方法。The reverse clearance angle α is set to 10 ′ to 30 ′, and the distance L from the cutting edge to the ridge angle is set to 0.1 to 0.2 mm. min and a cutting depth of 2 to 5 μm for ultra-precise cutting of aluminum alloy products. 逆逃げ角αを10’〜30’とし、刃先部から稜角までの距離Lを0.1〜0.2mmとした単結晶ダイヤモンド平バイトを用い、送り速度を2000〜2500mm/minとし、切り込み深さを2〜5μmとして超精密切削された幅1〜11mmのシール面を有するアルミニウム合金製品。The reverse clearance angle α is set to 10 ′ to 30 ′, the distance L from the cutting edge to the ridge angle is set to 0.1 to 0.2 mm, a single crystal diamond flat tool is used, the feed speed is set to 2000 to 2500 mm / min, and the cutting depth is set. An aluminum alloy product having a seal surface with a width of 1 to 11 mm, which is ultra-precision cut with a height of 2 to 5 μm.
JP2002353121A 2002-12-04 2002-12-04 Single crystal diamond cutting tool Pending JP2004181591A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007059251A3 (en) * 2005-11-15 2007-12-06 Carnegie Inst Of Washington New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate
WO2009099130A1 (en) 2008-02-06 2009-08-13 Sumitomo Electric Industries, Ltd. Polycrystalline diamond
CN107716962A (en) * 2017-09-30 2018-02-23 鼎胜刀具(东莞)有限公司 A kind of minute surface knife
JP2023135175A (en) * 2022-03-15 2023-09-28 株式会社大阪プロジャパン Vacuum container manufacturing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007059251A3 (en) * 2005-11-15 2007-12-06 Carnegie Inst Of Washington New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate
JP2009519193A (en) * 2005-11-15 2009-05-14 カーネギー インスチチューション オブ ワシントン New diamond applications / uses based on single crystal CVD diamond produced at high growth rates
US7820131B2 (en) 2005-11-15 2010-10-26 Carnegie Institution Of Washington Diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate
AU2006315377B2 (en) * 2005-11-15 2010-10-28 Carnegie Institution Of Washington New Diamond uses/applications based on single-crystal CVD Diamond Produced at Rapid Growth Rate
WO2009099130A1 (en) 2008-02-06 2009-08-13 Sumitomo Electric Industries, Ltd. Polycrystalline diamond
US9630853B2 (en) 2008-02-06 2017-04-25 Sumitomo Electric Industries, Ltd. Method of preparing polycrystalline diamond
CN107716962A (en) * 2017-09-30 2018-02-23 鼎胜刀具(东莞)有限公司 A kind of minute surface knife
JP2023135175A (en) * 2022-03-15 2023-09-28 株式会社大阪プロジャパン Vacuum container manufacturing method
JP7829917B2 (en) 2022-03-15 2026-03-16 株式会社大阪プロジャパン Method for manufacturing vacuum containers

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