DE102024117484A1 - Arrangement, system and method for generating EUV radiation or for operating nuclear fusion, as well as manufacturing methods for producing microchips or semiconductor intermediates for producing microchips - Google Patents

Abstract

Arrangement (26) for generating EUV radiation or for operating nuclear fusion by irradiating a target material (28) with a plurality of laser beams (20, 22, 24). The arrangement (26) comprises a target chamber (32) having an interior (34) with a target area (36) for irradiating the target material (28) with the plurality of laser beams (20, 22, 24), an insertion device (38) for introducing the target material (28) into the target area (36), and a manipulation device (46) for shaping and/or positioning the target material (28) in the target area (36).

Description

The invention relates to an arrangement, a system and a method for generating EUV radiation or for operating nuclear fusion.

Extreme ultraviolet (EUV) radiation enables the precise and highly accurate imaging of fine structures, which is why EUV radiation is frequently used in lithography, a process that can therefore be called EUV lithography. Due to the advantage of precise and highly accurate imaging of fine structures, EUV lithography is typically used for the production of microchips.

The EUV radiation for EUV lithography can be generated using a system. This system typically includes a laser beam generation unit, a beam guidance device, and a target chamber containing a target material.

EUV radiation can be generated by directing and/or focusing the laser beam onto the target material using the beam guidance device. In other words, the beam guidance device can be configured to direct and/or focus the laser beam from the laser beam generation assembly onto the target material. For this purpose, the beam guidance device can comprise multiple optical components, in particular lenses and/or mirror modules.

When the laser beam hits the target material, it can be converted into a plasma state by the laser beam in such a way that EUV radiation is generated.

In other words, the target material can emit EUV radiation when irradiated with the laser beam.

A vacuum is preferably established in the target chamber, and then hydrogen is introduced. The pressure of the hydrogen present in the target chamber can be in the range of 1 Pa (Pascal) to ^10⁻¹⁵ Pa, preferably ^10⁻³ Pa to ^10⁻¹² Pa.

The target material can be a metal, for example, tin. The target material can be in the form of droplets, for example, tin droplets. The formation of the target material as tin droplets can be particularly advantageous for the generation of EUV radiation due to a high yield of EUV radiation.

The laser beam generation arrangement can have a number, for example 1, 2, or 3, of laser beam sources. Each laser beam source can be configured to generate a laser beam. The laser beams from the laser beam sources can then combine to form the laser beam of the laser beam generation arrangement.

If the laser beam generation arrangement has two or more laser beam sources, the wavelengths of the laser beams from the laser beam sources may be equal in magnitude or different from each other.

For example, at least one laser beam source can be designed as a _CO₂ laser. The _CO₂ laser can provide a laser beam with a wavelength of 9 µm (micrometers) to 11 µm, preferably 10.6 µm.

Alternatively, at least one laser beam source can be configured as a solid-state laser, particularly with thulium as the laser-active material. The solid-state laser can provide a laser beam with a wavelength of 1.8 µm to 3 µm, particularly 1.9 µm to 2.1 µm, preferably about 2 µm. Using a laser beam with a wavelength of about 2 µm for generating EUV radiation can be more economical than using a laser beam with a wavelength of 10.6 µm, since the energy consumption for generating the laser beam using the solid-state laser can be lower than the energy consumption for generating the laser beam using the _CO₂ laser.

The laser beam of the laser beam generation arrangement can be a pulsed laser beam. The pulsed laser beam can include pre-pulses and main pulses. Each main pulse can be preceded, particularly shortly before, by a pre-pulse. The pre-pulse can have a lower laser power than the main pulse. The pre-pulses and the main pulses can be generated using the same laser beam source or different laser beam sources.

The pre-pulse can prepare the target material for the main pulse and/or perform measurement tasks by measuring the pre-pulse's back reflection from the target material, ensuring that as much of the main pulse as possible is converted into EUV radiation upon impact. In particular, the pre-pulse can be designed to influence the target material, for example, by heating, expanding, vaporizing, ionizing, and/or transitioning the target material into a plasma state.

Typically, pre-pulses can be generated by a solid-state laser in the laser beam generation arrangement, which provides a laser beam with a wavelength in the range of 1 µm to 1.6 µm, preferably 1.01 to 1.08 µm. The main pulses can be generated by the _CO₂ laser, which provides the laser beam with a wavelength of 9 µm to 11 µm, preferably 10.6 µm, or by the solid-state laser, which provides the laser beam with a wavelength of 1.8 µm to 3 µm, in particular 1.9 µm to 2.1 µm, preferably about 2 µm.

The main pulse allows a major portion of the target material affected by the pre-pulse to be converted into a plasma state, thus generating EUV radiation.

The laser beam can be a polarized laser beam.

Furthermore, energy can be generated through nuclear fusion in a power plant. Nuclear fusion can be understood as the merging of atomic nuclei. Nuclear fusion can be ignited by irradiating a target material with a laser beam, which is why such nuclear fusion can also be referred to as laser-driven fusion.

The invention aims to provide an arrangement, system and method for generating EUV radiation or for operating nuclear fusion, each enabling more efficient generation of EUV radiation or more efficient nuclear fusion.

The invention solves this problem by providing an arrangement with the features of claim 1, a system with features of claim 9, and a method with the features of claim 10. Advantageous embodiments and further developments of the invention are set forth in the dependent claims.

An arrangement according to the invention is designed for generating EUV radiation or for operating nuclear fusion by irradiating a target material with a plurality, for example 2, 3, or 5, of laser beams. The arrangement comprises a target chamber, an insertion device, and a manipulation device. The target chamber has an interior space. The interior space has a target area for irradiating the target material with the plurality of laser beams. The insertion device is designed for introducing the target material into the target area. The manipulation device is designed for shaping and/or positioning the target material in the target area.

Advantageously, the shape and/or position of the target material within the target area can be modified using the manipulation device so that the target material has an optimal shape and/or position for generating EUV radiation or for operating nuclear fusion. This allows for a particularly high yield of EUV radiation or makes initiating and operating nuclear fusion particularly easy and efficient.

The majority of laser beams can be identical or different. Each laser beam can have a wavelength in the range of 1.8 µm to 3 µm, in particular 1.9 µm to 2.1 µm, and/or 9 µm to 11 µm. In particular, each laser beam can have a wavelength of 2 µm and/or 10.6 µm.

The number of laser beams can be odd. In other words, the majority of laser beams can have an odd number of laser beams.

The majority of laser beams can strike the target material at different points. In other words, each laser beam can strike the target material at a single point, and these points of impact differ from one another.

The target chamber can be configured as a vacuum chamber. The target chamber can be filled with hydrogen at a pressure of 1 Pa to ^10⁻¹⁵ Pa, preferably ^10⁻³ Pa to ^10⁻¹² Pa. Alternatively, the vacuum chamber can be in a vacuum state. In this vacuum state, a vacuum can be maintained within the interior of the vacuum chamber.

The target area can be limited by the interior space. The target area can be a region within the interior space. The target area can be smaller than the interior space. Any point within the target area can be irradiated by multiple laser beams. In particular, each laser beam can be directed and/or focused on any point within the target area. If the target material is located within the target area, it can be irradiated by multiple laser beams. If the target material is located outside the target area, it cannot be irradiated by multiple laser beams.

The target material can be a metal, for example tin. The target material can be in the form of droplets, for example tin droplets.

The injection device can, for example, convert the target material into a liquid state. The injection device can be configured to introduce the target material as droplets into the target area. The injection device can also be referred to as a droplet generator. The injection device can have a nozzle with a nozzle opening, the nozzle opening being located in the target chamber or immersed in a housing wall of the injection device, from which the target material emerges for injection. The exit of the target material from the nozzle opening allows the target material to be introduced into the target chamber.

The introduction of the target material into the target area by the introduction device can be achieved by the device introducing the target material into the interior in such a way that the target material moves into the target area. In other words, the target material can perform a movement within the target chamber. For example, gravity can act on the target material, causing it to move within the target chamber.

The insertion device and the manipulation device can be designed separately.

The manipulation device can be designed to shape and/or position the target material in the target area without contact, in particular without physical contact.

The term "shape of the target material" can be understood to mean that a shape of the droplet-shaped target material is changed and/or an unwanted change in the shape of the target material is counteracted.

For example, the manipulation device can shape the target material in such a way that, at least for a certain period during irradiation with the majority of laser beams, the target material exhibits a spherical shape, thereby avoiding aberrations in the EUV radiation. This spherical shape of the target material during irradiation with the majority of laser beams allows for a particularly high yield of EUV radiation or makes initiating and operating nuclear fusion particularly easy and efficient.

Positioning the target material can be understood as the manipulation device acting on the target material in such a way that the target material maintains its current position or is moved to a desired position.

For example, the target material may move within the target area. This movement can be counteracted by positioning the target material using the manipulation device. Specifically, the manipulation device can act on the target material in such a way that it does not leave its current position. In other words, the manipulation device can act on the target material in such a way that it does not move. This ensures that the target material does not change its position during irradiation with multiple laser beams. This allows multiple laser beams to act on the target material without requiring any individual laser beam to be repositioned. Advantageously, this allows for longer irradiation times of the target material with multiple laser beams.

Additionally or alternatively, the manipulation device can act on the target material in such a way that the target material moves within the target area in a desired direction. This allows, for example, excess or unused target material to be directed into a designated and equipped target material collection device.

Another aspect of the setup is that radiation pressures are exerted on the target material by irradiating it with multiple laser beams. These radiation pressures can be exerted on the target material by the multiple laser beams upon impact. Additionally or alternatively, pressures can occur during the transition of the target material into the plasma state. These pressures and/or the radiation pressures can cause an undesired change in the shape and/or position of the target material. This can lead to aberrations in the EUV radiation and/or the target material can, for example, come into contact with and damage an imaging device used to image the EUV radiation. If EUV radiation is used in an EUV system for EUV lithography, the target material can land on and damage an EUV scanner, a wafer to be exposed with EUV radiation, and/or a photomask. To prevent this, the arrangement includes a manipulation device designed to shape and/or position the target material within the target area. The target material does not assume an unwanted shape and/or position.

Another aspect of the arrangement may be that the manipulation device reduces unwanted expansion of the target material, especially in the plasma state, thereby achieving better optical properties of the EUV radiation and less contamination of the target chamber with the target material.

In a further development of the arrangement, the manipulation device includes a control unit for controlling the power and/or phase of each laser beam. The control unit is designed to shape and/or position the target material by controlling the power and/or phase of each laser beam.

Advantageously, this allows the irradiation of the target material for generating EUV radiation or for driving nuclear fusion, and the shaping and/or positioning of the target material within the target area, to be performed simultaneously by irradiating the target material with multiple laser beams. In particular, this allows the majority of laser beams to fulfill a dual function: irradiating the target material for generating EUV radiation or driving nuclear fusion, and simultaneously shaping and/or positioning the target material within the target area.

Another advantage of this arrangement is that it can reduce the number of actively controlled mirrors required to direct the majority of laser beams onto the target material, thereby saving costs and simplifying the process. Furthermore, it can reduce or completely eliminate safety issues that can arise from actively controlled mirrors.

The control unit may include a computer and/or a microcontroller.

By controlling the power and/or phase of each laser beam, the radiation pressure exerted on the target material by each laser beam can be controlled. The target material can be shaped and/or positioned by this radiation pressure. This radiation pressure can also be referred to as light pressure. In other words, the manipulation device can be configured to shape and/or position the target material through optical levitation, which is controlled by adjusting the power and/or phase of each laser beam.

Controlling the power of each laser beam can be achieved by controlling an energy supply to a laser source that generates the laser beam, and/or by controlling an energy supply to a laser amplifier that amplifies the laser beam.

Controlling the phase of any laser beam can be achieved by controlling the optical path length of the laser beam in a laser source that generates the laser beam.

In a further development of the arrangement, the manipulation device includes a detector for detecting the actual shape and/or position of the target material within the target area. The control device is designed to shape and/or position the target material by controlling the power and/or phase of each laser beam depending on the detected actual shape and/or position of the target material.

The detector can be coupled to the control unit.

The detector may include a camera, in particular a high-speed camera. The detector may be configured to detect the actual shape and/or position of the target material by generating image data, for example in the form of a photograph, of the target area. The control unit may be configured to analyze the image data.

The manipulation device, in particular the control unit, can be predefined with a target shape and/or position of the target material. The control unit can be configured to detect any deviation of the actual shape and/or position from the target shape and/or position. The manipulation device can be configured to shape and/or position the target material until the actual shape and/or position of the target material, as detected by the detector, matches the target shape and/or position. In particular, the manipulation device can be configured to control the power and/or phase of each laser beam based on the detected actual shape and/or position such that the target material achieves the target shape and/or position.

In a further development of the arrangement, the arrangement includes a capture device for trapping the target material after the generation of EUV radiation or after the operation of nuclear fusion. The manipulation device is designed for this purpose. det, to position the target material into the capture device, in particular to transport it.

The capture device can be configured to collect and/or store the target material used for EUV radiation generation or nuclear fusion after the fusion process has been completed. This allows the introduction of additional target material into the target area for EUV radiation generation or nuclear fusion without the previously used target material interfering with or affecting subsequent EUV radiation generation or nuclear fusion. In particular, the capture device can prevent unwanted contact between the target material and any component of the arrangement after EUV radiation generation or nuclear fusion.

The capture device can be located inside the target area. It can be located inside or outside the target area. The capture device can be designed as a container. The target material can be moved into the capture device by the manipulation device after the generation of EUV radiation or after the operation of nuclear fusion. In other words, the manipulation device can be configured to move target material into the capture device by controlling the power and/or phase of each laser beam.

In a further development of the arrangement, the manipulation device includes a beam guidance device for directing the majority of laser beams onto the target material. The beam guidance device is configured to direct the majority of laser beams onto the target material in such a way that the propagation direction of a first laser beam, particularly immediately before impacting the target material, has a directional component that is opposite to the directional component of the propagation direction of a second laser beam, particularly immediately before impacting the target material. Advantageously, this allows the radiation pressures from the majority of laser beams acting on the target material during the generation of EUV radiation or the operation of nuclear fusion to be counteracted, and in particular at least partially compensated.

Due to the oppositely directed directional components of the two laser beams, it is possible to achieve equilibrium in the radiation pressures acting on the target material in the oppositely directed directional components, provided the two laser beams have the same power and phase. When the radiation pressures are in equilibrium, they cannot cause a change in the position of the target material.

The beam guidance device may include optical components, in particular lenses and/or mirrors.

In particular, the beam guidance device can be configured to direct the majority of laser beams onto the target material in such a way that the propagation directions of the majority of laser beams, especially immediately before impacting the target material, exhibit directional components that are opposite to each other. This allows the radiation pressures from the majority of laser beams acting on the target material during the generation of EUV radiation or the operation of nuclear fusion to be compensated.

In a further development of the arrangement, the first laser beam, particularly immediately before impacting the target material, and the second laser beam, particularly immediately before impacting the target material, define an angle α between themselves. The angle α preferably has a value in the range of 90° to 270°. Advantageously, this allows radiation pressures from the majority of laser beams acting on the target material during the generation of EUV radiation or the operation of nuclear fusion to be counteracted, and in particular at least partially compensated. If more than three laser beams are used, the laser beams can define an angle α between themselves and their immediately adjacent laser beams, particularly immediately before impacting the target material, with a value in the range of 0° < α < 360°.

The angle α can be, for example, specifically 120°, especially when exactly three laser beams are used, or 180°, especially when exactly two laser beams are used.

In an additional or alternative further development of the arrangement, the beam guidance device is configured to guide the majority of laser beams onto the target material in such a way that the majority of laser beams, particularly immediately before striking the target material, define an angle α between them. Each angle α can satisfy the condition: α = 360°/n, where n is the number of laser beams. Two adjacent laser beams can define the angle α between them.

To determine the angle α between immediately adjacent laser beams, virtual projections of the laser beams in a reference plane, particularly a horizontal or vertical one, are considered. If more than two laser beams are present, multiple reference planes can exist, namely one for each pair of laser beams under consideration. The reference planes can be different from one another, especially if the laser beams are directed at the target material in a three-dimensional reference system. In other words, to determine the magnitude or angles α, a separate reference plane is defined for each pair of laser beams under consideration.

In addition or alternatively, the angle(s) α between the laser beams are chosen such that a resultant is in particular exactly zero or alternatively the resultant defines a certain desired feed direction for the target material.

In a further development of the arrangement, the manipulation device includes a splitting device for dividing a main laser beam into multiple laser beams. Advantageously, this allows the arrangement to be integrated particularly easily into an existing system for generating EUV radiation or for operating nuclear fusion, which provides a main laser beam.

The beam guidance device can be configured to guide the majority of laser beams from the splitting device to the target material.

The splitting device may include a polarization module for splitting the main laser beam into multiple laser beams. The polarization module may include at least one polarizer. The main laser beam may be a polarized laser beam. The control device may be configured to change the alignment between the polarization of the main laser beam and the polarization module, thereby controlling the power of each laser beam. Changing the alignment between the polarization of the main laser beam and the polarization module may be achieved by rotating the polarization module.

The beam splitting device can include a filter module for splitting the main laser beam into multiple laser beams. The filter module can include at least one wavelength filter. The main laser beam can have spatially separable wavelengths by means of the filter module. The control device can be configured to change the alignment between the main laser beam and the filter module, thereby controlling the power of each laser beam. Changing the alignment between the main laser beam and the filter module can be achieved, for example, by changing the angle of incidence of the main laser beam on the filter module, in particular by tilting the wavelength filter.

A system according to the invention is suitable for generating EUV radiation or for operating nuclear fusion by irradiating a target material with a plurality of laser beams. The system comprises a laser beam generation arrangement for generating the plurality of laser beams and a previously described arrangement.

A method according to the invention is designed for generating EUV radiation or for carrying out nuclear fusion by irradiating a target material with a plurality of laser beams. The method comprises the steps of: introducing the target material into a target area; shaping and/or positioning the target material in the target area by irradiating the target material with a plurality of laser beams; and generating EUV radiation or carrying out nuclear fusion by irradiating the target material with a plurality of laser beams.

The method can be configured to operate the previously described arrangement. The previously given description of the arrangement can also apply to identical or functionally equivalent features of the method, and/or vice versa.

The target material can be introduced into the target area using the introduction device. The previously described target chamber can contain the target area. The shaping and/or positioning of the target material within the target area can be performed using the manipulation device.

The shaping and/or positioning of the target material in the target area and the generation of EUV radiation or the operation of nuclear fusion can be carried out simultaneously.

In a further development of the process, shaping and/or positioning the target material in the target area includes controlling the power and/or phase of each laser beam.

The power and/or phase of each laser beam can be controlled using the control unit.

In a further development of the method, shaping and/or positioning the target material in the target area includes directing the majority of laser beams onto the target material, such that a propagation direction of a first laser beam has a directional component before hitting the target material that is opposite to a directional component of a propagation direction of a second laser beam before hitting the target material.

The beam guidance device can be used to direct the majority of laser beams onto the target material.

In a further development of the procedure, the process includes the following step prior to irradiating the target material with the majority of laser beams: splitting a main laser beam into the majority of laser beams.

The splitting of the main laser beam into the majority of laser beams can be done using the splitting device.

In a further development of the procedure, the process includes the step of moving the target material out of the target area by controlling the power and/or phase of each laser beam.

The target material can be moved using the manipulation device. Moving the target material can also mean moving it into the capture device.

Controlling the power and/or phase for moving the target material out of the target area can occur at one end of the EUV radiation generation or nuclear fusion operation.

A manufacturing process according to the invention is designed for the production of microchips or semiconductor intermediates for the production of microchips. The manufacturing process comprises the steps of a process with some or all of the features described above and wherein an arrangement with some or all of the features described above or a system as described above is used. The manufacturing process further comprises the step of directing the generated EUV radiation onto a semiconductor material and the step of forming a structure in the semiconductor material by means of the EUV radiation directed thereon.

• 1 eine schematische Darstellung einer Anlage zur Erzeugung von EUV-Strahlung,
• 2 eine schematische Darstellung eines weiteren Ausführungsbeispiels einer Anlage zur Erzeugung von EUV-Strahlung,
• 3 eine schematische Darstellung eines weiteren Ausführungsbeispiels einer Anlage zur Erzeugung von EUV-Strahlung, und
• 4 ein schematischer Ablauf eines Verfahrens zum Erzeugen von EUV-Strahlung oder zum Betreiben von Kernfusion mit der Anlage von 1, 2 oder 3.
• 5 ein schematischer Ablauf eines Herstellungsverfahren zum Herstellen von Mikrochips oder Halbleiter-Zwischenprodukten zum Herstellen von Mikrochips.

Further advantages and advantageous embodiments of the invention can be seen from the figures, their description, and the claims. All features disclosed in the figures, their description, and the claims can be essential to the invention, both individually and in any combination. The figures show:

• 1 a schematic representation of a system for generating EUV radiation,
• 2 a schematic representation of another embodiment of a system for generating EUV radiation,
• 3 a schematic representation of another embodiment of a system for generating EUV radiation, and
• 4 a schematic sequence of a procedure for generating EUV radiation or for operating nuclear fusion with the facility of 1 , 2 or 3 .
• 5 A schematic sequence of a manufacturing process for producing microchips or semiconductor intermediates for producing microchips.

1 Figure 10 shows a system for generating EUV radiation.

The system 10 has a laser beam generation arrangement 12. The laser beam generation arrangement 12 has a first laser source 14, a second laser source 16, and a third laser source 18. Each laser source 14, 16, 18 is configured to generate a laser beam. The laser beam of the first laser source 14 can be called the first laser beam 20 of the laser beam generation arrangement 12, the laser beam of the second laser source 16 can be called the second laser beam 22 of the laser beam generation arrangement 12, and the laser beam of the third laser source 18 can be called the third laser beam 24 of the laser beam generation arrangement 12. The number of laser beams 20, 22, 24 is odd.

The three laser beams 20, 22, 24 are arranged in a plane. In particular, the laser beams 20, 22, 24 are arranged in an x-y plane of the system 10.

In an alternative embodiment not shown, the laser beam generation arrangement can be configured to generate more than three laser beams.

Each laser beam source 14, 16, 18 has a solid-state laser. Each solid-state laser uses thulium as its laser-active material. This allows for the following: Laser beams 20, 22, 24 with a wavelength of 2 µm were supplied to laser beam sources 14, 16, 18. Laser beams 20, 22, 24 are each pulsed laser beams.

The system 10 has an arrangement 26. The arrangement 26 is designed for generating EUV radiation by irradiating a target material 28 with the laser beams 20, 22, 24.

By irradiating the target material 28 with the laser beams 20, 22, 24, the target material 28 is converted into a plasma state and emits EUV radiation. A 1 The EUV reflector of Annex 10, not shown, can deflect the emitted EUV radiation.

The arrangement 26 has a beam guidance device 30 for guiding the laser beams 20, 22, 24 from the laser beam generation arrangement 12 onto the target material 28. The beam guidance device 30 is configured to guide the laser beams 20, 22, 24 onto the target material 28 such that each laser beam 20, 22, 24 strikes the target material 28 at a point of impact, the points of impact of the laser beams 20, 22, 24 being distinct from one another.

The beam guidance device 30 has a plurality of lenses and mirrors to direct the laser beams 20, 22, 24 from the laser beam generation arrangement 12 onto the target material 28. In particular, the laser beams 20, 22, 24 are focused onto the target material 28 by means of the lenses. 1 Only two deflecting mirrors of the beam guidance device 30 are shown schematically.

The arrangement 26 has a target chamber 32 with an interior space 34. The target chamber 32 is designed as a vacuum chamber. Hydrogen is present in the target chamber 32 at a pressure of 0.3 Pa. In other words, the interior space 34 contains hydrogen. The hydrogen can be used to purge the target chamber 32.

The interior space 34 has a target area 36 for irradiating the target material 28 with the laser beams 20, 22, 24. The target area 36 is a region within the interior space 34 in which any point can be irradiated with the laser beams 20, 22, 24. In other words, the beam guidance device 30 is configured to direct and/or focus the laser beams 20, 22, 24 onto any point within the target area 36. In particular, the target area 36 can be defined such that if the target material 28 is located within the target area 36, the laser beams 20, 22, 24 can be directed and/or focused onto the target material 28, preferably by means of the beam guidance device 30, and if the target material 28 is located outside the target area 36, the laser beams 20, 22, 24 cannot be directed and/or focused onto the target material 28, preferably by means of the beam guidance device 30.

The arrangement 26 has an injection device 38 for introducing the target material 28 into the target area 36. The injection device 38 is filled with the target material 28. The injection device 38 is designed to introduce the target material 28 into the interior 34 in individual droplets one after the other. For this purpose, the injection device 38 has a nozzle 40 with a nozzle opening 42. The nozzle opening 42 is located in the interior 34. The nozzle opening 42 is directed towards the target area 36. A droplet of the target material 28 can exit from the nozzle opening 42. 1 Two droplets of the target material 28 are shown as an example.

The target material 28 is introduced into the interior space 34 by means of the introduction device 38 in such a way that the target material 28 moves into the target area 36. In particular, each droplet of the target material 28 moves along a direction of movement 44 within the interior space 34. The direction of movement 44 is directed towards the target area 36. This movement causes each droplet of the target material 28 to move into the target area 36. Gravity can also act on each droplet of the target material 28, causing the target material 28 to move along the direction of movement 44.

In the illustrated embodiment of the 1 The target material 28 is made of tin. Each droplet of the target material 28 is a tin droplet.

The arrangement 26 has a manipulation device 46. The manipulation device 46 and the insertion device 38 are designed separately from each other. The manipulation device 46 is designed to shape and/or position a droplet of the target material 28 in the target area 36. In other words, the manipulation device 46 acts on the droplet of the target material 28 in the target area 36 such that the shape and/or position of the droplet of the target material 28 changes. In particular, the manipulation device 46 is designed to shape and/or position the droplet of the target material 28 without contact.

The manipulation device 46 has a control device 48 for controlling a power output. of each laser beam 20, 22, 24. The control unit 48 has a computer.

The control unit 48 is configured to control the energy supply to each laser source 14, 16, 18, thereby controlling the power of each laser beam 20, 22, 24. By controlling the power of each laser beam 20, 22, 24, the radiation pressure exerted on the target material 28 by each laser beam 20, 22, 24 is controlled. By controlling the radiation pressure of each laser beam 20, 22, 24, the target material 28 is shaped and/or positioned.

Thus, the laser beams 20, 22, 24 fulfill a dual function. On the one hand, the laser beams 20, 22, 24 are used for generating EUV radiation and simultaneously for shaping and/or positioning the target material 28 in the target area 36. Therefore, the generation of EUV radiation and the shaping and/or positioning of the target material 28 in the target area 36 occur simultaneously.

The manipulation device 46 has a detector 50 for detecting the actual shape and position of the target material 28 in the target area 36. The detector 50 is configured as a high-speed camera. The detector 50 is configured to detect the actual shape and position of the droplet of the target material 28 in the target area 36 by generating image data in the form of a photograph. The detector 50 is coupled to the control unit 48. The control unit 48 is configured to analyze the image data from the detector 50.

The control unit 48 determines, based on the actual position and shape of the target material droplet detected by the detector 50, whether it deviates from a target shape and position. If a deviation is detected, the control unit 48 adjusts the power of each laser beam 20, 22, 24 to minimize the deviation. This enables the manipulation device 46 to shape and position the target material droplet 28.

The control unit 48 can control the power of each laser beam 20, 22, 24 until the droplet of target material 28 in the target area 36 has the desired shape and position.

In the illustrated embodiment of the 1 The first laser beam 20 propagates, particularly immediately before impacting the droplet of target material 28 in the target area 36, along a propagation direction 52. The propagation direction 52 of the first laser beam 20 before impacting the droplet of target material 28 is opposite to the direction of movement 44 of the droplets of target material 18.

By controlling the power of the first laser beam 20, the movement of the target material droplet 28 along the direction of motion 44 is stopped. Specifically, the first laser beam 20 strikes the target material droplet 28 and exerts a radiation pressure on it. This radiation pressure stops the target material droplet 28 from moving along the direction of motion 44 and causes it to maintain its current position within the target area 36.

While the first laser beam 20 strikes the droplet of target material 28 and holds it in its current position, the second laser beam 22 and the third laser beam 24 strike the droplet of target material 28. Irradiating the droplet of target material 28 with the laser beams 20, 22, and 24 generates EUV radiation. In particular, because the first laser beam 20 holds the droplet of target material 28 in its current position, the laser beams 20, 22, and 24 can strike the droplet of target material 28 with a longer irradiation time, thus achieving a higher yield of EUV radiation.

The beam guidance device 30 is configured to guide the second laser beam 22 onto the droplet of target material 28 such that the second laser beam 22 propagates, particularly immediately before impacting the droplet of target material 28, along a propagation direction 54 in the target area 36. The propagation direction 54 of the second laser beam 22 can be composed of a first directional component 56 and a second directional component 58.

The second directional component 58 of the propagation direction 54 of the second laser beam 22 is aligned parallel to the direction of movement 44 of the droplet of the target material 28 and parallel to the propagation direction 52 of the first laser beam 20. The second directional component 58 of the propagation direction 54 of the second laser beam 22 is directed opposite to the propagation direction 52 of the first laser beam 20.

The beam guidance device 30 is configured to guide the third laser beam 24 onto the droplet of target material 28 in such a way that the third laser beam 24, in particular immediately before striking the droplet of target material 28, is located in the target area 36. propagates along a propagation direction 60. The propagation direction 60 of the third laser beam 24 can be composed of a first directional component 62 and a second directional component 64.

The second directional component 64 of the propagation direction 60 of the third laser beam 24 is aligned parallel to the direction of movement 44 of the droplet of the target material 28 and parallel to the propagation direction 52 of the first laser beam 20. The second directional component 64 of the propagation direction 60 of the third laser beam 24 is directed opposite to the propagation direction 52 of the first laser beam 20.

The control device 48 can control the power of the laser beams 20, 22, 24 such that the radiation pressure acting on the droplet of target material 28 by the impact of the first laser beam 20 in the direction of propagation 52 of the first laser beam 20, the radiation pressure acting on the droplet of target material 28 by the impact of the second laser beam 22 in the direction of the second directional component 58 of the second laser beam 22, the radiation pressure acting on the droplet of target material 28 by the impact of the third laser beam 24 in the direction of the second directional component 64 of the third laser beam 24, and the movement of the droplet of target material 28 along the direction of movement 44 are in equilibrium, so that the droplet of target material 28 maintains its current position within the target area 36.

The first directional component 56 of the propagation direction 54 of the second laser beam 22 and the first directional component 62 of the propagation direction 60 of the third laser beam 24 are directed in opposite directions.

The control device 48 can control the power of the second laser beam 22 and the power of the third laser beam 24 such that the radiation pressure acting on the droplet of target material 28 by the impact of the second laser beam 22 in the direction of the first directional component 56 of the second laser beam 22, and the radiation pressure acting on the droplet of target material 28 by the impact of the third laser beam 24 in the direction of the first directional component 62 of the third laser beam 24, are in equilibrium, so that the droplet of target material 28 maintains its current position within the target area 36.

The beam guidance device 30 is configured to guide the laser beams 20, 22, 24 onto the droplet of target material 28 such that the laser beams, particularly immediately before striking the droplet of target material 28, define an angle α between them, which is indicated in the figures and also below by reference numeral 66. In particular, an angle 66 is defined between two adjacent laser beams 20, 22, 24. In the illustrated embodiment of the 1 The first laser beam 20 and the second laser beam 22 form an angle 66 between them, as do the first laser beam 20 and the third laser beam 24, and the second laser beam 22 and the third laser beam 24. All angles 66 have the same magnitude.

Every angle 66 fulfills the conditions: α = 360°/n, where n is the number of laser beams. Annex 10 of the 1 It has a total of three laser beams 20, 22, 24. Therefore, n is equal to 3 and each angle 66 is 120°.

In an alternative embodiment not shown, the system can have a total of two laser beams. In this case, each impact angle can be 180°.

In further embodiments not shown in detail, more than three laser beams 20, 22, 24 can also be used. In this case, the angles α between immediately adjacent laser beams 20, 22, 24 can each have a value in the range of 0° < α < 360°.

After generating EUV radiation, the control unit 48 controls the power of the laser beams 20, 22, 24 such that the droplet of target material 28 is moved into a capture device 68 of the arrangement 26. This can be achieved, for example, by shaping the laser beams 20, 22, 24.

The trapping device 68 is designed as a container. The trapping device 68 is arranged in the interior space 34. The trapping device 68 is arranged outside the target area 36.

The capture device 68 is designed to capture and store the droplet of target material 28 used for generating EUV radiation after the EUV radiation has been generated. This prepares the target area 36 for a subsequent droplet of target material 28. In particular, this ensures that the subsequent generation of EUV radiation with the subsequent droplet of target material 28 is not disturbed or impaired by the previously used droplet of target material 28.

In 2 is another embodiment of Annex 10 of the 1 schematically represented, whereby the same reference symbols are used for identical and functionally equivalent elements, and in this respect, reference is made to the above explanations regarding the exemplary embodiment of the 1 Reference can be made to the existing differences, so that essentially only the existing differences will be addressed.

The laser beam generation arrangement 12 is configured to provide a main laser beam 70. The main laser beam 70 is a linearly polarized laser beam.

The manipulation device 46 has a splitting device 72 for splitting the main laser beam 70 into the laser beams 20, 22, 24.

The splitting device 72 has a polarization module with two polarizers that can be rotated relative to each other. The main laser beam 70 is split into laser beams 20, 22, and 24 by the two polarizers. The control device 48 is designed to control, and in particular change, the rotational positions or orientations of the polarizers by rotation. The power of the laser beams 20, 22, and 24 depends on the rotational positions of the polarizers. By changing the rotational positions of the polarizers, the power of the laser beams 20, 22, and 24 can be controlled.

The beam guidance device 30 is designed to guide the laser beams 20, 22, 24 from the splitting device 72 to the target material 28.

In 3 is another embodiment of Annex 10 of the 1 schematically represented, whereby the same reference symbols are used for identical and functionally equivalent elements, and in this respect, reference is made to the above explanations regarding the exemplary embodiment of the 1 Reference can be made to the existing differences, so that essentially only the existing differences will be addressed.

Unlike those in 1 and 2 The illustrated embodiments are in 3 A side view of Annex 10 is shown. In other words, in 1 and 2 Is the facility 10 represented in an xy-plane and in 3 The system 10 is shown in a yz plane.

In 3 The EUV mirror 74 is shown for deflecting the emitted EUV radiation. The irradiation of the droplet of target material 28 for the generation of EUV radiation takes place with the laser beams 20, 22, 24 when the droplet is located at a focal point of the EUV mirror 74.

The second laser beam 22 and the third laser beam 24 exhibit a tilt angle 76 with respect to the propagation direction 52 of the first laser beam 20 before impacting the droplet of target material 28 in an x-z plane of the system 10. The tilt angle 76 can have a value in the range of 0.1° to 5°, particularly 0.1° to 3°. This creates a radiation pressure on the droplet of target material 28, which moves the droplet away from the EUV mirror 74. Advantageously, this prevents direct contact between the droplet of target material 28 and the EUV mirror 74.

4 Figure 10 shows an exemplary process for generating EUV radiation using one of the previously described systems. 1 , 2 or 3 .

The method comprises the following steps: a) introducing the target material 28 into the target area 36 of the target chamber 32 by means of the introduction device 38; b) shaping and/or positioning the target material 28 in the target area 36 by means of the manipulation device 46 by irradiating the target material 28 with the laser beams 20, 22, 24, wherein the irradiation of the target material 28 includes controlling the power and/or phase of each laser beam 20, 22, 24 by means of the control device 48; c) generating EUV radiation or operating nuclear fusion by irradiating the target material 28 with the laser beams 20, 22, 24; and d) moving the target material 28 out of the target area 36 by controlling the power and/or phase of each laser beam 20, 22, 24 by means of the manipulation device 46.

Step d) can be a movement of the target material 28 into the catching device 68.

5 shows an exemplary sequence of a manufacturing process for producing microchips or semiconductor intermediates with a previously described system 10 of 1 and with the procedural steps of the previously described procedure according to 4 .

In addition to the steps of the process, the manufacturing process demonstrates 4 the steps are: a2) Directing the generated EUV radiation onto a semiconductor material; b2) Forming a structure in the semiconductor material using the EUV radiation directed onto it.

Claims (15)

Arrangement (26) for generating EUV radiation or for carrying out nuclear fusion by irradiating a target material (28) with comprising a plurality of laser beams (20, 22, 24): - a target chamber (32) comprising an interior (34) with a target area (36) for irradiating the target material (28) with the plurality of laser beams (20, 22, 24), - an insertion device (38) for introducing the target material (28) into the target area (36), and - a manipulation device (46) for shaping and/or positioning the target material (28) in the target area (36). Order (26) Claim 1 , - wherein the manipulation device (46) comprises a control device (48) for controlling a power and/or a phase of each laser beam (20, 22, 24), - wherein the control device (48) is configured to shape and/or position the target material (28) by controlling the power and/or the phase of each laser beam (20, 22, 24). Order (26) Claim 2 , - wherein the manipulation device (46) has a detector (50) for detecting an actual shape and/or actual position of the target material (28) in the target area (36), - wherein the control device (48) is configured to shape and/or position the target material (28) by controlling the power and/or phase of each laser beam (20, 22, 24) depending on the detected actual shape and/or actual position of the target material (28). Order (26) Claim 2 or 3 , - wherein the arrangement (26) comprises a capture device (68) for capturing the target material (28) after the generation of EUV radiation or after the operation of nuclear fusion, - wherein the manipulation device (46) is configured to position the target material (28) into the capture device (68), in particular to move it. Arrangement (26) according to one of the preceding claims, - wherein the manipulation device (46) comprises a beam guidance device (30) for guiding the plurality of laser beams (20, 22, 24) onto the target material (28), - wherein the beam guidance device (30) is configured to guide the plurality of laser beams (20, 22, 24) onto the target material (28) such that a propagation direction (52) of a first laser beam (20) has a directional component prior to impacting the target material (28) which is directed opposite to a directional component (58) of a propagation direction (54) of a second laser beam (22) prior to impacting the target material (28). Order (26) Claim 5 , - wherein the first laser beam (20) and the second laser beam (22) define an angle (66) between themselves before impacting the target material (28), - wherein the angle (66) has a value in a range of 90° to 270°. Order (26) Claim 5 or 6 - wherein the beam guidance device (30) is configured to guide the majority of laser beams (20, 22, 24) onto the target material (28) such that the majority of laser beams (20, 22, 24) define an impact angle (66) between them before striking the target material (28), - wherein each impact angle (66) satisfies the conditions: AW = 360°/n, - where AW is the impact angle (66) and n is a number of laser beams (20, 22, 24). Arrangement (26) according to one of the preceding claims, - wherein the manipulation device (46) comprises a splitting device (72) for splitting a main laser beam (70) into the plurality of laser beams (20, 22, 24). A system (10) for generating EUV radiation or for operating nuclear fusion by irradiating a target material (28) with a plurality of laser beams (20, 22, 24), comprising: - a laser beam generation arrangement (12) for generating the plurality of laser beams (20, 22, 24), and - an arrangement (26) according to any one of the preceding claims. A method for generating EUV radiation or for operating nuclear fusion by irradiating a target material (28) with a plurality of laser beams (20, 22, 24), the method comprising the steps of: - introducing the target material (28) into a target area (36), - shaping and/or positioning the target material (28) in the target area (36) by irradiating the target material (28) with the plurality of laser beams (20, 22, 24), and - generating EUV radiation or operating nuclear fusion by irradiating the target material (28) with the plurality of laser beams (20, 22, 24). Procedure according to Claim 10 , - wherein shaping and/or positioning the target material (28) in the target area (36) includes controlling a power and/or phase of each laser beam (20, 22, 24). Procedure according to Claim 10 or 11 , - wherein the shaping and/or positioning of the target material (28) in the target area (36) includes directing the majority of laser beams (20, 22, 24) onto the target material (28) such that a propagation direction (52) of a first laser beam (20) before impacting the target material (28) has a directional component which is opposite to a directional component (58) of a propagation direction (54) of a second laser beam (22) before impacting the target material (28). Procedure according to one of the preceding Claims 10 until 12 , - wherein the procedure, prior to irradiating the target material (28) with the plurality of laser beams (20, 22, 24), includes the step of splitting a main laser beam (70) into the plurality of laser beams (20, 22, 24). Procedure according to one of the preceding Claims 10 until 13 , - wherein the method comprises the step of moving the target material (28) out of the target area (36) by controlling the power and/or phase of each laser beam (20, 22, 24). Manufacturing process for producing microchips or semiconductor intermediates for producing microchips, wherein the manufacturing process comprises the steps of a process according to one of the Claims 10 until 14 includes and an arrangement (26) according to one of the Claims 1 until 8 or an installation (10) according to Claim 9 is used and the manufacturing process additionally includes the following steps: - Directing the generated EUV radiation onto a semiconductor material; - Forming a structure in the semiconductor material by means of the EUV radiation directed onto it.