CN222620894U - Driving circuit and power stage circuit - Google Patents
Driving circuit and power stage circuit Download PDFInfo
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- CN222620894U CN222620894U CN202420389481.9U CN202420389481U CN222620894U CN 222620894 U CN222620894 U CN 222620894U CN 202420389481 U CN202420389481 U CN 202420389481U CN 222620894 U CN222620894 U CN 222620894U
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Abstract
本实用新型提出一种驱动电路及功率级电路，驱动电路包括：半桥电路，包括串联的上拉管和下拉管，下拉管连接高边侧功率管/低边侧功率管的栅极和源极；检测电路，检测高边侧功率管和低边侧功率管连接处的电压变化率；钳位电路，在电压变化率大于预设阈值时控制下拉管的栅极连接上拉管和下拉管的连接节点。本实用新型提出的驱动电路会在连接节点的电压变化率大于预设阈值时，驱动下拉管等效为二极管，进而使得高/低边侧功率管的栅源寄生电容的电位钳位在等效二极管的导通压降，所以此时高/低边侧功率管的栅漏寄生电容的电流会从下拉管流经而处不会对高/低边侧功率管的栅源电容进行充电，从而避免了高边侧功率管和低边侧功率管直通的情况出现。
The utility model proposes a driving circuit and a power stage circuit, the driving circuit comprising: a half-bridge circuit, comprising a pull-up tube and a pull-down tube connected in series, the pull-down tube connecting the gate and source of the high-side power tube/low-side power tube; a detection circuit, detecting the voltage change rate at the connection between the high-side power tube and the low-side power tube; a clamping circuit, controlling the gate of the pull-down tube to connect the connection node of the pull-up tube and the pull-down tube when the voltage change rate is greater than a preset threshold. The driving circuit proposed in the utility model will drive the pull-down tube to be equivalent to a diode when the voltage change rate of the connection node is greater than a preset threshold, thereby clamping the potential of the gate-source parasitic capacitance of the high/low-side power tube at the conduction voltage drop of the equivalent diode, so that at this time the current of the gate-drain parasitic capacitance of the high/low-side power tube will flow through the pull-down tube and will not charge the gate-source capacitance of the high/low-side power tube, thereby avoiding the situation where the high-side power tube and the low-side power tube are directly connected.
Description
Technical Field
The utility model belongs to the technical field of power electronics, and particularly relates to a driving circuit and a power stage circuit.
Background
With the rapid development of power electronics technology, MOSFETs are increasingly used, and thus, driving designs of MOSFETs are also paid attention to. In the prior art, the MOSFET driving design is generally shown in fig. 1 and 2, and a half-bridge circuit is used to drive a high-side power transistor or a low-side power transistor in a power stage circuit. For example, as shown in fig. 1, when the pull-down tube DRVN is turned on to drive the low-side power tube QL to be turned off, the high-side power tube QH is turned on to generate a larger dv/dt at the node SW, and if the problem that the driving power is powered down or the logic is disturbed occurs, the gate voltage of the pull-down tube DRVN is not reliably pulled up, which results in that the pull-down tube DRVN cannot discharge the current flowing from the gate-drain parasitic capacitor C GD of the low-side power tube to the gate of the low-side power tube, so that the gate-source parasitic capacitor C GS of the low-side power tube charges, and further the low-side power tube QL is misturned on, the high-side power tube QH and the low-side power tube QL are directly connected. Similarly, as shown in fig. 2, when the pull-down transistor DRVN is turned on to drive the high-side power transistor QH to be turned off, the low-side power transistor QL is turned on to generate a larger dv/dt at the node SW, and the high-side power transistor QH and the low-side power transistor QL are turned on.
Therefore, the existing MOSFET drive circuit needs to be improved to avoid charging the gate-source parasitic capacitance C GS, high-side power transistors and low-side power transistor pass-through when a large dv/dt is generated at the node SW.
Disclosure of utility model
In order to solve the technical problem that a driving circuit in the prior art cannot solve the direct connection of a high-side power tube and a low-side power tube in a power stage circuit, the utility model provides a driving circuit and a power stage circuit, wherein the driving circuit comprises:
The half-bridge circuit comprises a pull-up tube and a pull-down tube which are connected in series, wherein the pull-up tube is connected with a high potential end, and the pull-down tube is connected with a grid electrode and a source electrode of the high-side power tube or is connected with the grid electrode and the source electrode of the low-side power tube;
The detection circuit detects the voltage change rate of a first node, wherein the first node is the joint of the high-side power tube and the low-side power tube;
and when the voltage change rate is larger than a preset threshold value, the clamping circuit controls the grid electrode of the pull-down tube to be connected with the connection node of the pull-up tube and the pull-down tube.
Preferably, the clamping circuit includes a first switch connected between the gate of the pull-down tube and the connection node.
Preferably, the clamping circuit further comprises a first resistor, and the first resistor is connected in series with the first switch.
Further, the control circuit is used for controlling the on-off of the first switch, and controlling the first switch to be turned on when the voltage change rate is larger than the preset threshold value and turned off when the voltage change rate is smaller than the preset threshold value.
Preferably, when the pull-down tube is connected with the high-side power tube, the detection circuit comprises a first capacitor, the control circuit comprises a comparator, a first control tube, a second control tube and a third control tube, the negative electrode of the first capacitor is connected with the first node, the positive electrode of the first capacitor is connected with the positive input end of the comparator, the output end of the comparator is connected with the grid electrode of the third control tube, the drain electrode of the third control tube is connected with the first control tube and the grid electrode of the second control tube, the grid electrodes of the first control tube and the second control tube are connected with a power supply, the source electrode of the first control tube is connected with the source electrode and the drain electrode of the first switch and is connected with the drain electrode and the source electrode of the second control tube and is connected with the first node, and the source electrode of the first switch is sequentially connected with the first resistor, the connection node and the drain electrode of the first control tube and the grid electrode of the pull-down tube.
Preferably, when the pull-down tube is connected with the low-side power tube, the detection circuit comprises a first capacitor, the control circuit comprises a first control tube and a second control tube, the positive electrode of the first capacitor is connected with the first node, the negative electrode of the first capacitor is connected with the first control tube and the grid electrode of the second control tube, the source electrode of the first control tube is connected with the source electrode of the first switch, the drain electrode of the second control tube is connected with the grid electrode of the first switch, the drain electrode of the second control tube is connected with the drain electrode of the first control tube, the source electrode of the first switch is grounded, and the source electrode of the first switch is sequentially connected with the first resistor, the connecting node and the drain electrode of the first switch are connected with the grid electrode of the pull-down tube.
Further, when the voltage change rate is larger than the preset threshold, the second control tube and the first switch are conducted, and when the voltage change rate is smaller than the preset threshold, the first control tube and the third control tube are conducted, and the first switch is disconnected.
Further, when the voltage change rate is larger than the preset threshold, the second control tube and the first switch are conducted, and when the voltage change rate is smaller than the preset threshold, the first control tube is conducted, and the first switch is disconnected.
Further, the pull-up tube is PMOS, the pull-down tube is NMOS, the source electrode of the pull-up tube is connected to the high potential end, the drain electrode of the pull-up tube is connected to the drain electrode of the pull-down tube, the drain electrode of the pull-down tube is connected to the gate electrode of the high-side power tube, the source electrode is connected to the first node, or the drain electrode of the pull-down tube is connected to the gate electrode of the low-side power tube, and the source electrode is grounded.
A power stage circuit comprising a high side power transistor and a low side power transistor comprising the drive circuit described above.
In the driving circuit provided by the utility model, when the voltage change rate of the first node is larger than a preset threshold value due to the conduction of the high-side power tube/low-side power tube in the power stage circuit, the clamping circuit can enable the pull-down tube to be equivalent to a diode, so that the potential of the gate source parasitic capacitance of the high-side power tube/low-side power tube can be clamped at the conduction voltage drop of the equivalent diode, and the current of the gate drain parasitic capacitance of the high-side power tube/low-side power tube completely flows into the pull-down tube, so that no current flows at the gate source parasitic capacitance of the high-side power tube/low-side power tube, and the situation that the high-side power tube and the low-side power tube are directly connected is avoided.
Drawings
FIG. 1 is a prior art drive circuit for a low side power transistor;
FIG. 2 is a prior art drive circuit for a high side power transistor;
FIG. 3 is a block diagram of a driving circuit of a low-side power transistor according to the present utility model;
FIG. 4 is a schematic diagram of a driving circuit of a low-side power transistor according to the present utility model;
FIG. 5 is a block diagram of a driving circuit of a high-side power transistor according to the present utility model;
fig. 6 is a specific circuit of the driving circuit of the high-side power tube according to the present utility model.
Detailed Description
In order that the utility model may be readily understood, a more complete description of the utility model will be rendered by reference to the appended drawings. Preferred embodiments of the present utility model are shown in the drawings. The utility model may, however, be embodied in different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
In the prior art, when a driving circuit drives a high-side power tube/a low-side power tube in a power stage circuit, the problem that the high-side power tube and the low-side power tube are directly connected cannot be solved. Based on this problem, the present utility model proposes a driving circuit comprising:
The half-bridge circuit comprises a pull-up tube and a pull-down tube which are connected in series, the pull-up tube is connected with a high potential end, the pull-down tube is connected with a low potential end, the pull-down tube is connected between a grid electrode and a source electrode of a high-side power tube in the power stage circuit so as to drive the high-side power tube to be switched on and off, or the pull-down tube is connected between the grid electrode and the source electrode of a low-side power tube in the power stage circuit so as to drive the low-side power tube to be switched on and off;
the detection circuit is used for detecting the voltage change rate at the connection node of the high-side power tube and the low-side power tube, and the connection node of the high-side power tube and the low-side power tube is marked as a first node;
And when the voltage change rate is larger than a preset threshold value, the clamping circuit controls the grid electrode of the pull-down tube to be connected with the connection node of the pull-up tube and the pull-down tube, so that the pull-down tube is equivalent to a diode, and the potential of the grid source parasitic capacitance of the high-side power tube/the low-side power tube is controlled to be clamped at the conduction voltage drop of the equivalent diode.
Therefore, when the voltage change rate of the first node is larger than the preset threshold value due to the conduction of the high-side power tube/low-side power tube in the power stage circuit, the clamping circuit can make the pull-down tube equivalent to a diode, so that the potential of the gate source parasitic capacitance of the high-side power tube/low-side power tube can be clamped at the conduction voltage drop of the equivalent diode, and all the current of the gate drain parasitic capacitance of the high-side power tube/low-side power tube flows into the pull-down tube, so that no current flows at the gate source parasitic capacitance of the high-side power tube/low-side power tube, and the situation that the high-side power tube and the low-side power tube are directly connected is avoided.
Further, the simplest clamping circuit is designed in such a way that the clamping circuit only comprises a first switch, the first switch is connected among the grid electrode of the pull-down tube, the connection nodes of the pull-up tube and the pull-down tube, when the voltage change rate is larger than a preset threshold value, the first switch is conducted to enable the grid electrode of the pull-down tube, the connection nodes of the pull-up tube and the pull-down tube to be connected, and when the voltage change rate is smaller than the preset threshold value, the first switch is turned off to avoid the internal resistance of a lead and the internal resistance of the first switch from consuming energy.
Furthermore, in order to adjust the conduction voltage drop when the pull-down tube is equivalent to a diode, the clamping circuit further comprises a first resistor, the first resistor is connected in series with the first switch, the first resistor after being connected in series with the first switch is connected among the grid of the pull-down tube, the connection node of the pull-up tube and the pull-down tube, when the voltage change rate is greater than a preset threshold value, the first switch is conducted to enable the grid of the pull-down tube, the connection node of the pull-up tube and the connection node of the pull-down tube to be connected, and when the voltage change rate is less than the preset threshold value, the first switch is turned off to avoid the consumption of energy by the first resistor.
Correspondingly, the driving circuit further comprises a control circuit, and the detection circuit controls the first switch to be conducted when the voltage change rate is larger than a preset threshold value so as to control the grid electrode of the pull-down tube to be connected with the connection node of the pull-up tube and the pull-down tube, so that the pull-down tube is equivalent to a diode to conduct voltage drop of the potential of the grid source parasitic capacitance of the high-side power tube/the low-side power tube in the equivalent diode. The detection circuit controls the first switch to be turned off when the voltage change rate is smaller than a preset threshold value so as to avoid extra energy consumption.
The driving circuit according to the present utility model will be further explained and illustrated with reference to specific embodiments.
In the first embodiment, as shown in fig. 3 and 4, a driving circuit is used to drive the low-side power transistor QL in the power stage circuit. As shown in fig. 4, the half-bridge circuit in the driving circuit includes a pull-up tube DRVP and a pull-down tube DRVN, the pull-up tube DRVP and the pull-down tube DRVN are connected in series, the pull-up tube DRVP is a PMOS tube, the pull-down tube DRVN is an NMOS tube, the source of the pull-up tube DRVP is connected to the power supply VDD, the drain is connected to the drain of the pull-down tube DRVN, the source of the pull-down tube DRVN is connected to the source and the drain of the low-side power tube QL (the connection node LO of the pull-up tube DRVP and the pull-down tube DRVN) is connected to the gate of the low-side power tube QL, and the gates of the pull-up tube DRVP and the pull-down tube DRVN receive the PWM driving signal. The PWM driving signal in the active state controls the pull-up tube DRVP to be turned on and the pull-down tube DRVN to be turned off to drive the low-side power tube QL to be turned on, and the PWM driving signal in the inactive state controls the pull-up tube DRVP to be turned off and the pull-down tube DRVN to be turned on to drive the low-side power tube QL to be turned off. The detection circuit in the drive circuit comprises a first capacitor C1, the clamping circuit in the drive circuit comprises a first switch M1 and a first resistor R1, and the control circuit in the drive circuit comprises a first control tube MOS1 and a second control tube MOS2. The positive pole of first electric capacity C1 is connected first node SW, the grid of first control tube MOS1 and second control tube MOS2 is connected to the negative pole of first electric capacity C1, the source of second control tube MOS2 is connected the source of first switch M1, the grid of first switch M1 is connected to the drain electrode of first control tube MOS1, the grid of first resistance, low side power tube QL is connected in proper order to the source of first switch, the drain electrode of second control tube is connected the drain electrode of first control tube MOS1, the source ground of second control tube.
The specific theory of operation is that, in a state that the PWM driving signal in an inactive state drives the pull-down tube DRVN to turn on to drive the low-side power tube QL to turn off, if the high-side power tube QH is controlled to turn on, the first capacitor detects that the voltage of the node SW rises rapidly, when the first capacitor C1 detects that the voltage change rate of the first node SW exceeds the preset threshold, the first capacitor C1 pulls the gate voltage of the second control tube high to turn on the second control tube, and then pulls the gate voltage of the first switch M1 low to turn on the first switch M1, so that the gate drain of the pull-down tube DRVN is connected to be equivalent to a diode, thereby clamping the potential of the gate-source parasitic capacitor of the low-side power tube QL at the conduction voltage drop of the equivalent diode. When the first capacitor C1 detects that the voltage change rate of the first node SW does not exceed the preset threshold, the first capacitor C1 pulls down the gate voltage of the first control tube MOS1 to turn on the first control tube, so that the gate source of the first switch M1 is connected to turn off the first switch M1, and the conduction internal resistance of the first resistor R1 and the first switch M1 is avoided to consume energy.
In summary, when the voltage change rate of the first node is greater than the preset threshold value due to the conduction of the high-side power tube in the power stage circuit, the pull-down tube is equivalent to a diode, so that the potential of the gate-source parasitic capacitance of the low-side power tube can be clamped at the conduction voltage drop of the equivalent diode, the current of the gate-drain parasitic capacitance of the low-side power tube completely flows into the pull-down tube, and no current flows through the gate-source parasitic capacitance of the low-side power tube, thereby avoiding the direct connection of the high-side power tube and the low-side power tube.
In the second embodiment, as shown in fig. 5 and 6, a driving circuit is used to drive the high-side power transistor QH in the power stage circuit. The driving circuit comprises a half-bridge circuit, a detection circuit, a clamping circuit and a control circuit. As shown in fig. 6, the half-bridge circuit includes a pull-up tube DRVP and a pull-down tube DRVN, the pull-up tube DRVP and the pull-down tube DRVN are connected in series, the pull-up tube DRVP is a PMOS tube, the pull-down tube DRVN is an NMOS tube, the source of the pull-up tube DRVP is connected to the power supply VDD, the drain is connected to the drain of the pull-down N tube DRVP, the source of the pull-down tube DRVN is connected to the source of the high-side power tube QH, the drain (the connection node HO of the pull-up tube DRVP and the pull-down tube DRVN) is connected to the gate of the high-side power tube QH, and the gates of the pull-up tube DRVP and the pull-down tube DRVN receive PWM driving signals. The PWM driving signal in the active state controls the pull-up tube DRVP to be turned on and the pull-down tube DRVN to be turned off to drive the high-side power tube QH to be in the on state, and the PWM driving signal in the inactive state controls the pull-up tube DRVP to be turned off and the pull-down tube DRVN to be turned on to drive the high-side power tube QH to be in the off state. The detection circuit comprises a first capacitor C1, the clamping circuit comprises a first switch M1 and a first resistor R1, the detection circuit comprises a first capacitor C1, and the control circuit comprises a comparator COMP, a first control tube MOS1, a second control tube MOS2 and a third control tube MOS3. The negative electrode of the first capacitor C1 is connected with the first node SW, the positive electrode of the first capacitor C1 is connected with the positive input end of the comparator COMP, the reverse input end of the comparator CMOP receives the reference voltage VREF, the output end of the comparator COMP is connected with the grid electrode of the third control tube MOS3, the drain electrode of the third control tube MOS3 is connected with the grid electrodes of the first control tube MOS1 and the second control tube MOS2, the source electrode of the third control tube MOS3 is grounded, the source electrode of the first control tube MOS1 is connected with the source electrode of the first switch M1, the drain electrode of the first control tube MOS1 is connected with the grid electrode of the first switch M1, the grid electrode of the first control tube MOS1 is connected with the power supply, the drain electrode of the second control tube MOS2 is connected with the first node SW, the grid electrode of the second control tube MOS2 is connected with the power supply, the source electrode of the first switch M1 is sequentially connected with the first resistor R1 and the grid electrode of the high-side power tube QH, and the drain electrode of the first switch M1 is connected with the grid electrode of the pull-down tube DRVN.
The specific theory of operation is that, in a state that the PWM driving signal in the inactive state drives the pull-down tube DRVN to turn on to drive the high-side power tube QH to turn off, if the low-side power tube QL is controlled to turn on, the first capacitor detects that the voltage of the first node SW is rapidly reduced, when the voltage change rate of the first node SW is greater than the preset threshold, the voltage of the forward input end of the comparator COMP is smaller than the voltage of the reverse input end, the output of the comparator COMP pulls down the gate voltage of the third control tube MOS3 to turn off the third control tube MOS3, the gate voltages of the first control tube MOS1 and the second control tube MOS2 pull up to turn off the first control tube MOS1 and turn on the second control tube MOS2, so that the gate voltage of the first switch M1 pulls down to turn on the first switch M1, and the gate and drain of the pull-down tube DRVN are connected to be equivalent to a diode, and the potential of the gate source parasitic capacitor of the high-side power tube QH is clamped to be the voltage drop of the equivalent diode. When the voltage change rate of the first node SW is smaller than the preset threshold, the voltage of the forward input end of the comparator COMP is larger than the voltage of the reverse input end, the output of the comparator COMP pulls up the gate voltage of the third control tube MOS3 to turn on the third control tube MOS3, the gate voltages of the first control tube MOS1 and the second control tube MOS2 are pulled down to turn on the first control tube MOS1 and turn off the second control tube MOS2, so that the gate of the first switch M1 is connected to the source, i.e., the first switch M1 is turned off.
In summary, when the voltage change rate of the first node is greater than the preset threshold value due to the conduction of the low-side power tube in the power stage circuit, the pull-down tube is equivalent to a diode, so that the potential of the gate-source parasitic capacitance of the high-side power tube can be clamped at the conduction voltage drop of the equivalent diode, the current of the gate-drain parasitic capacitance of the high-side power tube completely flows into the pull-down tube, and no current flows through the gate-source parasitic capacitance of the high-side power tube, thereby avoiding the direct connection of the high-side power tube and the low-side power tube.
The utility model also provides a power stage circuit, which comprises a high-side power tube and a low-side power tube, and further comprises the driving circuit, which is used for driving the high-side power tube/the low-side power tube to be switched on and off so as to avoid the condition that the high-side power tube and the low-side power tube are directly connected.
Finally, it should be noted that the above-mentioned examples are given for the purpose of illustration only and are not intended to limit the utility model to the particular embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present utility model.
Claims (10)
1. A drive circuit for driving on-off of a high side power tube or a low side power tube in a power stage circuit, comprising:
The half-bridge circuit comprises a pull-up tube and a pull-down tube which are connected in series, wherein the pull-up tube is connected with a high potential end, and the pull-down tube is connected with a grid electrode and a source electrode of the high-side power tube or is connected with the grid electrode and the source electrode of the low-side power tube;
The detection circuit detects the voltage change rate of a first node, wherein the first node is the joint of the high-side power tube and the low-side power tube;
and when the voltage change rate is larger than a preset threshold value, the clamping circuit controls the grid electrode of the pull-down tube to be connected with the connection node of the pull-up tube and the pull-down tube.
2. The drive circuit of claim 1, wherein the clamp circuit includes a first switch connected between a gate of the pull-down tube and the connection node.
3. The drive circuit of claim 2, wherein the clamp circuit further comprises a first resistor in series with the first switch.
4. A driving circuit according to claim 2 or 3, further comprising a control circuit controlling the on/off of the first switch, the control circuit controlling the first switch to be on when the rate of change of voltage is greater than the preset threshold value and controlling the first switch to be off when the rate of change of voltage is less than the preset threshold value.
5. The driving circuit of claim 4, wherein when the pull-down tube is connected to the high-side power tube, the detection circuit comprises a first capacitor, the control circuit comprises a comparator, a first control tube, a second control tube and a third control tube, the negative electrode of the first capacitor is connected to the first node, the positive electrode of the first capacitor is connected to the positive input end of the comparator, the output end of the comparator is connected to the gate of the third control tube, the drain electrode of the third control tube is connected to the gates of the first control tube and the second control tube, the gates of the first control tube and the second control tube are connected to a power supply, the source electrode of the first control tube is connected to the source electrode of the first switch, the drain electrode of the second control tube is connected to the drain electrode of the first control tube, the source electrode of the first switch is connected to the first node, and the source electrode of the first switch is sequentially connected to the first resistor, the connection node, and the gate electrode of the pull-down tube.
6. The driving circuit of claim 4, wherein when the pull-down tube is connected to the low-side power tube, the detection circuit comprises a first capacitor, the control circuit comprises a first control tube and a second control tube, the positive electrode of the first capacitor is connected to the first node, the negative electrode of the first capacitor is connected to the first control tube and the grid electrode of the second control tube, the source electrode of the first control tube is connected to the source electrode of the first switch, the drain electrode of the first control tube is connected to the grid electrode of the first switch, the drain electrode of the second control tube is connected to the drain electrode of the first control tube, the source electrode of the first switch is grounded, and the source electrode of the first switch is sequentially connected to a first resistor, the connection node and the drain electrode of the first switch are connected to the grid electrode of the pull-down tube.
7. The drive circuit of claim 5, wherein the second control tube and the first switch are turned on when the voltage change rate is greater than the preset threshold, and wherein the first control tube and the third control tube are turned on and the first switch is turned off when the voltage change rate is less than the preset threshold.
8. The drive circuit of claim 6, wherein the second control tube and the first switch are turned on when the voltage change rate is greater than the preset threshold, and wherein the first control tube is turned on and the first switch is turned off when the voltage change rate is less than the preset threshold.
9. The driving circuit of claim 1, wherein the pull-up tube is PMOS, the pull-down tube is NMOS, the source of the pull-up tube is connected to the high potential terminal, the drain of the pull-up tube is connected to the drain of the pull-down tube, the drain of the pull-down tube is connected to the gate of the high side power tube, the source is connected to the first node, or the drain of the pull-down tube is connected to the gate of the low side power tube, the source is grounded.
10. A power stage circuit comprising a high side power transistor and a low side power transistor, comprising a drive circuit as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202420389481.9U CN222620894U (en) | 2024-02-29 | 2024-02-29 | Driving circuit and power stage circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202420389481.9U CN222620894U (en) | 2024-02-29 | 2024-02-29 | Driving circuit and power stage circuit |
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| CN222620894U true CN222620894U (en) | 2025-03-14 |
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| CN202420389481.9U Active CN222620894U (en) | 2024-02-29 | 2024-02-29 | Driving circuit and power stage circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN120729259A (en) * | 2025-08-27 | 2025-09-30 | 成都能海昇芯科技有限责任公司 | Gate driver and power device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN120729259A (en) * | 2025-08-27 | 2025-09-30 | 成都能海昇芯科技有限责任公司 | Gate driver and power device |
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