CN119375788A - Highly integrated matrix magnetic sensor chip structure, circuit and manufacturing method - Google Patents
Highly integrated matrix magnetic sensor chip structure, circuit and manufacturing method Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
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- H10N52/101—Semiconductor Hall-effect devices
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Abstract
A high-integration matrix magnetic sensing chip structure, a circuit and a manufacturing method thereof belong to the technical field of semiconductor devices, the chip structure comprises a plurality of matrix elements, a switch matrix and a rear-end interface circuit, wherein each matrix element comprises a cross-shaped horizontal Hall element and a switch device, each switch matrix consists of the switch devices in the matrix element, each cross-shaped horizontal Hall element matrix is an N X M Hall matrix element formed by an integral 1X M Hall element matrix, and the invention performs innovation and manufacturing on the structure and the circuit of the matrix magnetic sensing chip capable of measuring multidimensional magnetic field distribution in real time, static state and dynamic state under severe environments such as high temperature, high pressure and high radiation.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a high-integration matrix type magnetic sensing chip structure, a circuit and a manufacturing method.
Background
The accurate measurement of the magnetic field is crucial to the daily life of people, and the accurate measurement of the magnetic field relates to whether other physical quantities such as positions, speeds, angles and the like can be accurately identified, so that the use of the device in the fields of power electronics, navigation guidance, aerospace, biomedicine and the like is affected. Common magnetic field measurement methods include hall effect, fluxgate, magneto-resistance, nmr, superconducting, magneto-optical, and the like. With the development of a generation of novel semiconductor materials, the Hall magnetic sensor has greatly developed, the performance of the Hall magnetic sensor is more excellent, and the application field is continuously increased.
The first generation semiconductor materials are silicon (Si) and germanium (Ge) materials, the second generation semiconductor materials are represented by gallium arsenide (GaAs), indium arsenide (InAs), indium antimonide (InSb), and the third generation semiconductor materials are represented by gallium nitride (GaN), silicon carbide (SiC), diamond, and zinc oxide (ZnO). The Hall magnetic sensor made of the first generation semiconductor material (typically Si) has low mobility of the material, so that the sensitivity of the device is low, and the second generation semiconductor material has small forbidden band width, so that the device has reliability problems such as performance degradation or failure at the high temperature of more than 200 ℃. In recent years, the third-generation semiconductor material has great potential in the aspects of photoelectric devices, power electronics, radio frequency microwave devices, lasers, detection devices and the like, and has the unique properties of large forbidden bandwidth, high breakdown electric field, high thermal conductivity, high electron saturation velocity, small dielectric constant and the like, so that the prepared device has the characteristics of high temperature resistance, high voltage resistance, radiation resistance, high sensitivity and the like, and can be effectively applied even in a severe environment. The Hall magnetic sensor made of the third-generation semiconductor material has good chemical stability and excellent high-temperature reliability due to the large forbidden bandwidth. In particular, the gallium nitride (GaN) Hall magnetic sensor is taken as an example, the forbidden bandwidth is 3.47eV, the device is ensured to have higher stability and reliability under a high-temperature environment, the heterojunction structure of the heterojunction structure has a naturally-formed high-mobility two-dimensional electron gas (2 DEG) channel, the device is ensured to have higher sensitivity, and the lower intrinsic carrier concentration of the heterojunction structure ensures the device to have lower noise. In addition, besides the semiconductor material, in domestic reports, there are hall sensors made of two-dimensional materials (such as graphene), and the low sheet carrier concentration of graphene and the thickness of monoatomic layer lead to high carrier saturation velocity, so that high sensitivity can be realized, and resolution can be optimized. And its simple processing technique and natural flexibility and mechanical properties are expected to find wide application in flexible sensors.
Currently, hall magnetic sensors with large market share are generally made of traditional materials such as silicon (Si), germanium (Ge) and the like, and are used in a single-point measurement state of a static magnetic field, and cannot measure magnetic field distribution of a dynamic magnetic field and a one-dimensional two-dimensional or even three-dimensional space, so that the magnetic field needs to be measured in real time or at multiple points by adopting a multi-dimensional matrix hall magnetic sensor. Meanwhile, in the single-point measurement state, the sensor usually has larger measurement error due to factors such as disturbance of the position or angle of the sensor, and a subsequent circuit is required to properly compensate the error. Therefore, a multi-dimensional matrix magnetic sensor with high sensitivity, high accuracy and high integration level needs to be designed to measure a magnetic field in real time or in multiple points, on one hand, the dynamic magnetic field can be measured, the magnetic field distribution can be observed in real time, on the other hand, the static magnetic field can be measured, the measuring error of the magnetic field is compensated through the matrix Hall magnetic sensor, and the measuring accuracy is improved while the circuit is simplified.
The existing Hall magnetic sensor is mostly a linear horizontal Hall magnetic sensor for measuring a magnetic field perpendicular to the surface of a device and mainly comprises three types. One is a single-material hall sensor represented by a Si material, which is mature in process and easy to integrate and produce, but is limited by low mobility of the Si material, and the sensitivity of the hall sensor is low. The more mature products on the market are the TLE499X series of Infrax, which are all linear Hall sensors with circuit integration and are commonly used in the steering torque sensing field. The second type is a hall sensor based on a heterojunction structure of a second-generation semiconductor (InAs, inSb, gaAs and the like), and although the high sensitivity can be obtained due to the high mobility of the 2DEG at the heterojunction interface, the device cannot work stably and reliably under a high-temperature environment due to the narrow forbidden bandwidth of the material. The products which are mature in the market are HW series, HG series and HQ series products which are formed by Asahi chemical industry, wherein the HW series is an InSb Hall sensor with highest sensitivity, the HG series is a GaAs Hall sensor with stable temperature characteristics in three series, and the HQ series is an InAs Hall sensor with balanced sensitivity and temperature characteristics in the three series. The third is a hall sensor based on a heterojunction structure of a third-generation semiconductor (GaN and the like), and the third-generation semiconductor material has the characteristics of high temperature resistance, high voltage resistance, radiation resistance, high sensitivity and the like due to the unique properties of large forbidden bandwidth, high breakdown electric field, high thermal conductivity, high electron saturation speed, small dielectric constant and the like, so that the device prepared by the third-generation semiconductor material can be effectively applied even in a severe environment. However, no more mature products exist in the market at present. All three hall magnetic sensors can only be used in a single-point measurement state of a static magnetic field, and cannot measure the dynamic magnetic field and the magnetic field distribution in one-dimensional, two-dimensional and even three-dimensional space, and particularly the third hall magnetic sensor has no more mature product in the market. Meanwhile, in the single-point measurement state, the sensor usually has larger measurement error due to factors such as disturbance of the position or angle of the sensor, and a subsequent circuit is required to properly compensate the error.
Therefore, the matrix type Hall magnetic sensor integrated with the subsequent interface circuit is more needed to measure the magnetic field distribution (including the magnetic field distribution under high temperature, high pressure and high radiation environment) in real time or multiple points, on one hand, the dynamic magnetic field can be measured, the magnetic field distribution can be observed in real time, on the other hand, the static magnetic field can be measured, the measuring error of the magnetic field can be compensated through the matrix type Hall magnetic sensor, and the circuit is simplified and the measuring accuracy is improved.
The existing Hall magnetic sensor is used in a single-point measurement state of a static magnetic field, and cannot measure a dynamic magnetic field and magnetic field distribution in one-dimensional, two-dimensional and even three-dimensional space. Meanwhile, in the single-point measurement state, the sensor usually has larger measurement error due to factors such as disturbance of the position or angle of the sensor, and a subsequent circuit is required to properly compensate the error.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-integration matrix magnetic sensor chip, which comprises a structure, a circuit and a manufacturing method thereof, wherein the technical scheme can be used for measuring the multidimensional matrix magnetic sensor chip of magnetic field distribution vertical to the surface of a device in real time, statically and dynamically, and carrying out innovation and manufacturing on the structure and the circuit; the dynamic and static measurement of the magnetic field in the multidimensional space can be realized, and error compensation is carried out through the circuit, so that the chip can work stably and has higher linearity, sensitivity and accuracy.
The technical proposal is as follows:
The high-integration matrix type magnetic sensing chip structure comprises a plurality of matrix elements, a switch matrix and a rear end interface circuit, wherein the matrix elements comprise cross-shaped horizontal Hall elements and switch devices, the switch matrix comprises switch devices in the matrix elements, the cross-shaped horizontal Hall element matrix 2 is an N x M matrix array formed by a1 x M Hall element matrix 1, each row of the N x M matrix array is an integral type, the electrodes C2 of each Hall element are connected with each other for the cross-shaped horizontal Hall element matrix 2 to be grounded, the electrodes S1 and the electrodes S2 are arranged at the leftmost end and the rightmost end of each row of the 1 x M Hall element matrix 1, the switch devices comprise a grid G, a source S and a drain D, and the electrodes C2 are connected with the source S through metal interconnection wires.
Further, the horizontal hall element in the cross shape may be made of a Si body material or GaN, gaAs, inSb, inAs, gaO two-dimensional electron gas channel materials, or may be made of a two-dimensional material such as graphene.
Further, the heterojunction structure formed by the two-dimensional electron gas channel material comprises a substrate, a buffer layer, a channel layer and a barrier layer, the two-dimensional electron gas channel material heterojunction structure formed by the buffer layer, the channel layer and the barrier layer is sequentially grown on the substrate, the horizontal Hall element and a switching device are arranged above the channel layer, the horizontal Hall element body is formed by the barrier layer in a cross shape, an electrode C1, an electrode C2, an electrode S1 and an electrode S2 are respectively arranged at four ends of the barrier layer, a source level S and a drain level D of the switching device are arranged on the channel layer, a medium layer extending to the barrier layer is arranged on the channel layer, a grid G is arranged above the medium layer, and the electrode C1 is connected with the source level S through a metal interconnection line.
Further, the substrate is one of silicon, silicon carbide and sapphire or is made of a material which is the same as that of the channel layer, and the buffer layer is one of AlN and GaN or is made of a superlattice structure material.
Further, the channel layer is one of GaN, gaAs, inSb, inAs, gaO, and the barrier layer is a heterojunction material capable of forming a two-dimensional electron gas channel with the channel layer.
Further, the dielectric layer is one of Al 2O3、Si3N4、SiO2 and SiON, and the metal interconnection line is one of copper, tungsten, aluminum and cobalt.
Further, the thickness of the buffer layer is 10-100 nm, the thickness of the channel layer is 0.1-10 mu m, the thickness of the barrier layer is 5-100 nm, and the thickness of the dielectric layer is 20-50 nm.
The invention further comprises a high-integration matrix type magnetic sensing chip circuit which comprises a power supply module, an excitation power supply, a reference voltage source, an adjustable gain amplifier, a voltage regulator, an AD converter, a microprocessor, a switch matrix and an N X M Hall matrix element, wherein the power supply module is respectively connected with the reference voltage source, the switch matrix and the microprocessor, the reference voltage source is respectively connected with the excitation power supply, the adjustable gain amplifier and the voltage regulator, the excitation power supply is sequentially connected with the N X M Hall matrix element, the adjustable gain amplifier, the voltage regulator, the AD converter and the microprocessor, and the switch matrix is connected with the N X M Hall matrix element and controlled by the microprocessor.
The N multiplied by M Hall element comprises a cross-shaped horizontal Hall element and a switching device, wherein the switching matrix is composed of the switching devices in the element, the cross-shaped horizontal Hall element matrix is an N multiplied by M matrix array formed by 1 multiplied by M Hall element matrixes, each row of the N multiplied by M matrix is integrated, for the cross-shaped horizontal Hall element matrix, the electrode C2 of each Hall element is connected with the ground, the electrode S1 and the electrode S2 are only arranged at the leftmost end and the rightmost end of each row of the 1 multiplied by M Hall element matrix, the switching device comprises a grid G, a source S and a drain D, and the electrode C2 is connected with the source S through a metal interconnection line.
The invention also includes a method for manufacturing a high-integration matrix magnetic sensor chip (for Si-based devices, a mature CMOS integrated circuit process or a silicon bipolar integrated circuit process is adopted, and not described in detail, the channel material heterojunction structure and the two-dimensional material device manufacturing process are mainly described here), and the method comprises the following steps:
s1, cleaning a substrate, namely preparing a substrate material, cleaning the substrate, and removing pollutants on the surface of the substrate;
S2, epitaxial growth, namely, for a channel material heterojunction structure device, epitaxially growing a two-dimensional electron gas channel material heterojunction structure and a buffer layer by utilizing any one of a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method and a hydride vapor phase epitaxy method, for a two-dimensional material device, growing a two-dimensional material by utilizing any one of a mechanical stripping method, a reduction oxidation method, a silicon carbide surface epitaxial growth method and a chemical vapor deposition CVD method, and transferring the two-dimensional material to a target substrate, wherein the thickness of the generated channel layer is 0.1-10 mu m, the thickness of a barrier layer on the channel layer is 5-100 nm, and the buffer layer is of an AlN, gaN or superlattice structure and has the thickness of 10-100 nm;
s3, mesa etching, namely etching the epitaxially grown sample by using an inductively coupled plasma etching method after photoetching development, wherein the mesa etching depth is 50-800 nm, the etching depth is 1-100 nm in step S4, the etching depth is 1-100 nm in step S6, and the deposition thickness is 5-50 nm in step S7;
S4, shallow etching, namely performing photoetching development on the sample subjected to mesa etching isolation, and performing shallow etching by using an inductive coupling plasma etching method, wherein the heterojunction structure device of the channel material is used for realizing a 2DEG contact mesa in the channel material;
S5, manufacturing electrodes by ohmic contact, namely depositing composite metal by an electron beam evaporation system after photoetching development, and forming good ohmic contact by a rapid thermal annealing process to manufacture electrodes C1, C2, S1, S2, a source electrode S and a drain electrode D;
s6, etching the gate groove, namely, preparing samples of the electrodes C1, C2, S1, S2, the source electrode S and the drain electrode D, and etching the gate groove by using an inductively coupled plasma etching method;
S7, gate dielectric deposition, namely performing gate groove interface treatment on the sample subjected to gate groove etching by adopting an alkaline solution with nitrogen element, and depositing the gate dielectric by utilizing any one of a metal organic compound chemical vapor deposition method, a plasma chemical vapor deposition method, an atomic layer deposition method, a low-pressure chemical vapor deposition method and a magnetron sputtering method;
s8, manufacturing a gate electrode, namely depositing composite metal by using an electron beam evaporation system after photoetching development, and stripping the metal to form the gate electrode;
S9, surface passivation, namely adopting any one of a plasma enhanced chemical vapor deposition method, a magnetron sputtering method, an atomic layer deposition method and an electron beam evaporation method to deposit SiO2 for device passivation;
S10, opening a window, namely photoetching and corroding a passivation layer at the electrode to form the window;
s11, manufacturing metal interconnection lines, namely depositing metal by using an electron beam evaporation system to form the interconnection lines after photoetching development;
s12, an electrode lead is formed by depositing metal at an electrode to manufacture a bonding pad and lead the bonding pad by adopting any one of a magnetron sputtering method, an electron beam evaporation method and a thermal evaporation method;
S13, circuit connection, namely packaging the bare die with the good lead, and connecting each component of the rear-end interface circuit on the same PCB board so as to finish circuit connection of the high-integration matrix magnetic sensing chip;
S14, appearance design is carried out on the whole system, and manufacturing of the instrument is completed.
The beneficial effects of the invention are as follows:
the high-integration matrix type magnetic sensing chip provided by the invention has the following characteristics:
1) The device has simple and various structures, can be made of Si materials, has mature process and reliable performance, can also be made of heterojunction structures formed by materials such as GaAs/AlGaAs, gaN/AlGaN, inAs/InGaAs, ga 2O3/AlGaO and the like, has high sensitivity due to a naturally formed two-dimensional electron gas (2 DEG) channel, has excellent electron transport performance under low field and high field due to higher electron mobility (the electron mobility of GaAs and InAs can reach 9000cm 2/(V·s)、40000cm2/(V.s) respectively), is an ideal channel material of a super-high-speed and low-power consumption sensing device, can be made of two-dimensional materials (such as graphene), has simple process and is easy to be compatible with a silicon-based CMOS process, and can realize a high-sensitivity Hall sensor under a lower temperature drift coefficient.
2) The device manufactured by the two-dimensional electron gas channel material typically has great potential in the aspects of photoelectric devices, power electrons, radio frequency microwave devices, lasers, detection devices and the like, for example, the GaN material has the unique properties of large forbidden bandwidth, high breakdown electric field, large heat conductivity, high electron saturation speed, small dielectric constant and the like, so that the manufactured device has the characteristics of high temperature resistance, high pressure resistance, radiation resistance, high sensitivity and the like, and can be effectively applied even in a severe environment.
3) The high-integration matrix type magnetic sensing chip consists of N multiplied by M matrix elements, a switch matrix and a rear end interface circuit, wherein each matrix element comprises a horizontal Hall element and a switch device, each switch device is combined to form the switch matrix, and a microprocessor generates a control signal to control the opening and closing of an excitation loop of the Hall element.
4) The high-integration matrix magnetic sensing chip not only can measure accurate static magnetic fields, but also can measure dynamic magnetic fields and observe magnetic field distribution in real time, is easy to integrate with a circuit, and a rear-end interface circuit ensures scanning acquisition of Hall signals output by each matrix element, and meanwhile, the output voltages of a plurality of matrix elements can realize compensation of the output voltages of other matrix elements, so that the sensitivity and accuracy are improved while the circuit is simplified.
The technical scheme of the invention has the beneficial effects that:
1) The simple structure that the Hall element and the switching device are combined into the matrix element can flexibly realize real-time, static and dynamic measurement of a magnetic field perpendicular to the direction of the device in one-dimensional, two-dimensional or even three-dimensional space, which is not possessed by a single Hall sensor;
2) The device can be made of various materials, such as Si materials, has mature process and reliable performance, can also be made of heterojunction structures formed by materials such as GaAs/AlGaAs, gaN/AlGaN, inAs/InGaAs, ga2O3/AlGaO and the like, has high sensitivity due to a naturally-formed two-dimensional electron gas (2 DEG) channel, has excellent electron transport performance in low field and high field due to higher electron mobility (the electron mobility of GaAs and InAs can reach 9000cm < 2 >/(V.s) and 40000cm < 2 >/(V.s) respectively), is an ideal channel material of an ultra-high-speed and low-power consumption sensing device, and can be made of two-dimensional materials (such as graphene), has a simple process and is compatible with a silicon-based CMOS process, and can realize a high-sensitivity Hall sensor under a lower temperature drift coefficient. Devices made of different materials can be matched with the chip structure, and chips made of different materials can be selected according to application environments, which is not possessed by the traditional Hall sensor;
2) The integration of the chip and the circuit greatly improves the performance of the device, ensures that the sensitivity of the device is greatly improved under the condition that the range of a measured magnetic field is unchanged, and is maximally 16.5mV/mT (when the range of the measured magnetic field is-100 mT and the exciting current is 1 mA), which is nearly 300 times that of a single third-generation semiconductor Hall sensor (for example, the sensitivity of the single GaN horizontal Hall sensor under the exciting current of 1mA is 0.06 mV/mT), and simultaneously, the linearity reaches 99.969%.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following detailed description will be given with reference to the accompanying drawings and detailed embodiments, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained from these drawings without inventive effort to a person of ordinary skill in the art. Wherein:
FIG. 1 is a schematic diagram of a high-integration matrix magnetic sensor chip according to the present invention;
FIG. 2 is a block diagram of a rear interface circuit (including a switch matrix) of the high-integration matrix magnetic sensor chip according to the present invention;
FIG. 3 is a top view of a process structure of an N×M Hall matrix of a high-integration matrix magnetic sensor chip according to the present invention;
FIG. 4 is a front view of a single matrix element process structure of a high-integration matrix magnetic sensor chip according to the present invention;
Fig. 5 to 16 are schematic diagrams of a process implementation procedure of a high-integration matrix magnetic sensor chip according to the present invention;
FIGS. 17-28 are process flow diagrams of embodiments of the present application;
FIG. 29 is a diagram of experimental verification results of the relationship between the magnetic field B of each matrix element and the Hall output voltage V o under the static measurement of the high-integration matrix magnetic sensor chip provided by the application of the invention;
Fig. 30 is a diagram of experimental verification results of a relationship that a single matrix element hall output voltage follows a magnetic field change under a sinusoidal magnetic field with a peak-to-peak value Bp-p of 17.798G and a frequency f of 5 Hz.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. The structure, circuit and manufacturing method of the high-integration matrix magnetic sensor chip are further described below with reference to fig. 1-7.
Example 1
In order to solve the problems in the prior art and realize real-time, dynamic and static measurement of a magnetic field perpendicular to the surface of a device in a high-temperature high-pressure high-radiation environment, the invention provides a technical scheme of a high-integration matrix type magnetic sensing chip. The technical scheme includes a chip structure, a circuit and a manufacturing method. As shown in FIG. 1, the structure of the high-integration matrix magnetic sensor chip is schematically shown, the device is composed of N×M matrix elements, a switch matrix and a back-end interface circuit, and each matrix element comprises a cross-shaped horizontal Hall element and a switch device. As shown in fig. 1, the electrodes C1 and C2 are excitation signal input terminals, a voltage V bias or a current I bias may be input, a potential difference may be measured between the electrodes S1 and S2 as a hall output voltage V hall, or the electrodes S1 and S2 may be input as signal input terminals, and a potential difference may be measured between the electrodes C1 and C2 as a hall output voltage. In the process, the electrode C2 of each hall element is connected to ground, and the electrode S1 and the electrode S2 are only arranged at the leftmost end and the rightmost end of each row of 1×m hall element matrix 1, and are respectively led out through a larger pad to serve as two common detection ends V hall+/Vhall-. The excitation electrodes C1 and C2 are grounded at one end and connected with the source S of the switching device at the other end through a metal interconnection process. Meanwhile, the grid electrodes G of the switching devices in each row of matrix elements are connected together and led out to be connected with a row selection signal of the microprocessor through wire bonding, the drain electrodes D of the switching devices in each column of matrix elements are connected together and connected with the source electrodes S of the column selection switching devices in the switching matrix, the grid electrodes G of the column selection switching devices in the switching matrix are led out to be connected with a column selection signal of the microprocessor through wire bonding, and an excitation power supply V bias/Ibias inputs an excitation signal through the drain electrodes D of the column selection switching devices. The on and off of the switching devices in each row of matrix elements are controlled by a row selection signal of the microprocessor, and the on and off of each column of column selection switching devices are controlled by a column selection signal, so that the excitation and detection of the Hall element in any column of any row can be realized at any moment.
In addition, in order to reduce measurement errors and realize real-time, static and dynamic measurement of magnetic field distribution, a rear-end interface circuit is built, and as shown in fig. 2, the rear-end interface circuit structure block diagram comprises a power supply module, a switch matrix, an excitation power supply, a reference voltage source, an adjustable gain amplifier, a voltage regulator, an AD converter and a microprocessor. The power supply module supplies power to the whole sensor chip, the excitation power supply supplies excitation current or voltage to the N multiplied by M Hall elements, the microprocessor outputs corresponding signals to control the switch of one or more switch devices, so that an excitation loop in the corresponding element is turned on or off, the reference voltage source supplies reference voltage V ref to the adjustable gain amplifier and the voltage converter, the adjustable gain amplifier amplifies the output voltage V hall of the Hall elements, the amplification factor is adjustable, the device can accurately measure various specific magnetic field ranges, the voltage regulator adjusts the amplified Hall output voltage to a voltage range which can be identified by the AD converter, and therefore the analog Hall output voltage signal V oa is converted into a digital Hall output voltage signal V od, and finally the Hall output voltage signal V o of each element is sent to the microprocessor for signal analysis and processing, for example, the Hall output voltage of one element is compensated by adopting other elements, so that measurement errors are reduced, the output results of the plurality of elements are output after weighted average processing, the Hall output voltage distribution graphs of all the elements are plotted, and the like.
The technical scheme of the invention is as shown in fig. 3-4, wherein in order to more clearly describe the process structure, a top view of the NxM Hall matrix process structure and a formal view of the single matrix element process structure are separately shown. The chip process structure comprises a substrate, a buffer layer, a channel layer, a barrier layer, a dielectric layer, a metal interconnection line, an electrode C1, an electrode C2, an electrode S1, an electrode S2, a grid G, a source S and a drain D. The substrate is silicon, silicon carbide, sapphire or other material substrate with the same quality as the channel layer, a buffer layer and a two-dimensional electron gas channel material heterojunction structure are epitaxially grown on the substrate, the heterojunction structure comprises the channel layer and a barrier layer, and two-dimensional electron gas (2 DEG) is formed at a heterojunction interface due to spontaneous polarization and piezoelectric polarization effects. The buffer layer may be AlN or GaN or other superlattice structure material (thickness is 10-100 nm), the channel layer is GaN, gaAs, inSb, inAs, gaO or other material capable of forming a two-dimensional electron gas channel (thickness is 0.1-10 μm), the barrier layer is AlGaN, inGaAs, alGaAs, inAlN, alGaO or other heterojunction material capable of forming a two-dimensional electron gas channel with the channel layer (thickness is 5-100 nm), the material composition in the barrier layer is not limited, the dielectric layer is oxide or nitride (thickness is 20-50 nm) such as Al 2O3、Si3N4、SiO2, siON or the like, and the metal interconnection line is usually copper, tungsten, aluminum, cobalt or other metal. The hall element electrodes C1, C2, S1, S2, the switching device gate G, the source S, and the drain D in each matrix element are all the same, and the electrode shape is not particularly limited, and may be rectangular, trapezoidal, or the like. In addition to the gate G, other electrodes need to form good ohmic contacts with the semiconductor material.
When a magnetic field B vertical to the device direction appears in the environment, a row selection signal and a column selection signal output by a microprocessor control a switching device in a certain row of matrix elements and a column selection switching device in a certain column of matrix elements in a switch matrix to be opened, and excitation voltages or excitation currents flow in corresponding to excitation ends C1 and C2 of the Hall elements in the matrix elements, so that a Hall output voltage signal is induced at an output end S1 (V hall+)、S2(Vhall-), and the signal is sent to a rear end interface circuit for a series of signal processing, including filtering, amplifying and the like and then output, and therefore, the magnetic field measurement at a designated position, dynamic magnetic field scanning and multidimensional magnetic field distribution measurement vertical to the chip direction can be realized.
The high-integration matrix magnetic sensing chip structure, the circuit and the manufacturing method proposal provided by the technology are characterized in that 1) the device structure is simple and various, can be manufactured by Si materials, has mature technology and reliable performance, can also be manufactured by heterojunction structures formed by materials such as GaAs/AlGaAs, gaN/AlGaN, inAs/InGaAs, ga 2O3/AlGaO and the like, has high sensitivity by a naturally formed two-dimensional electron gas (2 DEG) channel, and simultaneously has high electron mobility (the electron mobility of GaAs and InAs can reach 9000cm 2/(V·s)、40000cm2/(V.s) respectively), so that the device structure has excellent electron transport performance in low fields and high fields, is an ideal channel material of an ultra-high-speed and low-power consumption sensing device, can also be manufactured by two-dimensional materials (such as graphene), has simple technology and is compatible with a silicon-based CMOS technology, and can realize a high-sensitivity Hall sensor under a lower temperature drift coefficient. 2) The device manufactured by the two-dimensional electron gas channel material typically has great potential in the aspects of photoelectric devices, power electrons, radio frequency microwave devices, lasers, detection devices and the like, for example, the GaN material has the unique properties of large forbidden bandwidth, high breakdown electric field, large heat conductivity, high electron saturation speed, small dielectric constant and the like, so that the manufactured device has the characteristics of high temperature resistance, high pressure resistance, radiation resistance, high sensitivity and the like, and can be effectively applied even in a severe environment. 3) The high-integration matrix type magnetic sensing chip consists of N multiplied by M matrix elements, a switch matrix and a rear end interface circuit, each matrix element comprises a horizontal Hall element and a switch device, and each switch device is controlled to be switched on and off by row selection signals and column selection signals generated by a microprocessor, so that the opening and closing of a Hall element excitation loop are controlled, and the high-integration matrix type magnetic sensing chip is simple in structure and flexible in operation. 4) The high-integration matrix magnetic sensing chip not only can measure accurate static magnetic fields, but also can measure dynamic magnetic fields and observe magnetic field distribution in real time, is easy to integrate with a circuit, and a rear-end interface circuit ensures scanning acquisition of Hall signals output by each matrix element, and meanwhile, the output voltages of a plurality of matrix elements can realize compensation of the output voltages of other matrix elements, so that the sensitivity and accuracy are improved while the circuit is simplified.
As shown in fig. 5 to 16, the process implementation procedure of the device object of the present invention is described as follows:
1) Cleaning the substrate, namely preparing 4-inch or 6-inch substrate materials, cleaning the substrate, and removing pollutants on the surface of the substrate.
2) And (3) epitaxial growth, namely, epitaxially growing a two-dimensional electron gas channel material heterojunction structure and a buffer layer by utilizing any one mode of Metal Organic Chemical Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE) and Hydride Vapor Phase Epitaxy (HVPE), wherein the thickness of the generated channel layer is 0.1-10 mu m, the thickness of a barrier layer on the channel layer is 5-100 nm, and the buffer layer can be an AlN, gaN or superlattice structure and has the thickness of 10-100 nm.
3) And (3) mesa etching, namely etching the epitaxially grown sample by utilizing Inductively Coupled Plasma (ICP) after photoetching development, wherein the mesa etching depth is 50-800 nm.
4) Shallow etching, namely photoetching and developing a sample subjected to mesa etching isolation, and utilizing inductively coupled plasma
And carrying out shallow etching by using bulk etching (ICP) for realizing the 2DEG contact table top, wherein the etching depth is 1-100 nm. 5) Making electrode by ohmic contact, depositing composite metal by electron beam evaporation system after photoetching development, and then using
And forming good ohmic contact by a rapid annealing (RTA) process, and manufacturing electrodes C1, C2, S1 and S2, a source electrode S and a drain electrode D.
6) And (3) gate groove etching, namely, preparing samples of the electrodes C1, C2, S1 and S2, the source electrode S and the drain electrode D, and carrying out gate groove etching by utilizing Inductively Coupled Plasma (ICP) with the etching depth of 1-100 nm.
7) And depositing a gate dielectric by adopting an alkaline solution with nitrogen element to perform gate slot interface treatment on a sample subjected to gate slot etching, and depositing the gate dielectric by utilizing any one mode of Metal Organic Chemical Vapor Deposition (MOCVD), plasma chemical vapor deposition (PECVD), atomic Layer Deposition (ALD), low-pressure chemical vapor deposition (LPCVD) and magnetron sputtering, wherein the deposition thickness is 5-50 nm. 8) Manufacturing a gate electrode, namely depositing composite metal by using an electron beam evaporation system after photoetching development, and stripping the metal to form
And a gate electrode.
9) Surface passivation by Plasma Enhanced Chemical Vapor Deposition (PECVD), magnetron sputtering, atomic layer
Device passivation is performed by depositing SiO 2 by any one of deposition (ALD) and electron beam Evaporation (EB). 10 Opening the window, namely photoetching and corroding the passivation layer at the electrode to form the window.
11 And (3) manufacturing metal interconnection lines, namely depositing metal by using an electron beam evaporation system to form the interconnection lines after photoetching development.
12 Electrode lead wire is formed by using any one of magnetron sputtering method, electron beam evaporation method and thermal evaporation method to make electrode
Depositing metal at the position to manufacture a bonding pad and conducting wire leading;
13 And (3) circuit connection, namely packaging the bare die with the good lead, and connecting each component of the rear-end interface circuit on the same PCB board so as to finish circuit connection of the high-integration matrix magnetic sensor chip.
14 Appearance design is carried out on the whole system, and the manufacture of the instrument is completed.
The invention has the technical key points that the invention firstly provides a high-integration-level matrix magnetic sensing chip, which is not a horizontal Hall sensor for singly measuring a magnetic field perpendicular to the surface of a device, but is formed by connecting a plurality of horizontal Hall elements with a switch device to form N multiplied by M (N, M concrete numerical values can be determined according to the distribution of the measured magnetic field), the switch device flexibly controls the acquisition of Hall output signals, thereby realizing the measurement of the magnetic field distribution in one-dimensional, two-dimensional and even three-dimensional space, and being an innovation on the structure, and secondly, the device can be made of various materials, such as Si materials, mature technology, reliable performance, and also can be made of heterogeneous junction structures composed of GaAs/AlGaAs, gaN/AlGaN, inAs/InGaAs, ga2O3/AlGaO and the like, and the naturally formed two-dimensional electron gas (2 DEG) channel enables the sensitivity of the device to be high, and simultaneously, the electron mobility of the higher electron mobility (GaAs, inAs respectively can reach 9000cm < 2/(V.s), 00cm < 2 >. V) and the high-dimensional sensor can be realized under the conditions of high-speed and the ideal sensor, and the high-temperature sensor has high-sensitivity and high-speed and high-sensitivity performance, and is compatible with the CMOS sensor. The device made of different materials can be matched with the chip structure, and the chips made of different materials can be selected according to application environments, so that the device is an innovation in applicability, and the chip is simple in structure and easy to integrate with a rear-end interface circuit, realizes multi-point measurement of a plurality of matrix elements, and improves the sensitivity and accuracy of the device, so that the device is an innovation in performance. Therefore, the invention mainly protects the chip structure design, the instrument circuit structure and the manufacturing process.
Example 2
The invention discloses a high-integration matrix magnetic sensing chip composed of N multiplied by M (N, M specific numerical values can be determined according to the distribution of magnetic fields measured in the environment), wherein a specific embodiment is a matrix magnetic sensing chip composed of 1 multiplied by 10 Hall element matrix elements and adopting a two-dimensional electron gas channel material (GaN/AlGaN heterojunction structure) to manufacture a cross horizontal Hall element, and because each matrix element structure is the same as the process, the embodiment only shows the manufacturing process of a single matrix element, as shown in fig. 17-28, the manufacturing process flow is as follows:
1) Preparing a Si material substrate, cleaning the substrate material, and removing pollutants on the surface of the Si substrate.
2) And (3) epitaxial growth, namely, epitaxially growing an AlGaN/GaN heterojunction structure and a buffer layer AlN by using a Metal Organic Chemical Vapor Deposition (MOCVD) mode, wherein the generated GaN epitaxial layer is unintentionally doped, the thickness is 5 mu m, the background electron concentration is less than 1X 10 17cm-3, the thickness of an AlGaN barrier layer on the epitaxial layer is 25nm, and the Al component is 0.25. The buffer layer is AlN and has a thickness of 50nm.
3) Mesa etching, namely, etching the heterojunction by utilizing Inductively Coupled Plasma (ICP) after the epitaxially grown sample is subjected to gluing (AZ 6130 positive photoresist is used), spin-coating (forward spin is 600rpm-3s, backward spin is 1000rmp-20s, the final photoresist thickness is 2 um), photoetching and developing (90 seconds), etching the heterojunction with 200W of etching power and introducing 150sccm of Cl-based gas to etch for 250s, and finally forming the etching depth of about 400 nm.
4) Shallow etching, namely, etching the heterojunction by utilizing Inductively Coupled Plasma (ICP) after the sample subjected to mesa etching isolation is subjected to gluing (AZ 6130 positive photoresist is used), photoresist homogenizing (forward rotation is carried out for 600rpm-3s, backward rotation is carried out for 1000rmp-20s, the final photoresist thickness is 2 um), photoetching and developing (90 seconds), wherein the etching time is 30s, the etching rate is 55nm/min, and finally the etching depth of about 25nm is formed.
5) Making ohmic contact electrode by respectively depositing four layers of Ti (20 nm)/Al (100 nm)/Ni (45 nm)/Au (55 nm) metals by electron beam evaporation system after photoetching and development, and then using rapid annealing (RTA)
The process anneals for 30S in a nitrogen environment at 850 ℃ to form good ohmic contact, and electrodes C1, C2, S1 and S2, a source electrode S and a drain electrode D are manufactured.
6) And (3) gate groove etching, namely, preparing samples of the electrodes C1, C2, S1 and S2, the source electrode S and the drain electrode D, and etching the gate groove by utilizing Inductively Coupled Plasma (ICP) to etch the rest AlGaN to be 5nm.
7) And (3) gate dielectric deposition, namely performing gate groove interface treatment on the sample subjected to gate groove etching by adopting an alkaline solution with nitrogen element, and then depositing a gate dielectric SiNO with the deposition thickness of 20nm by utilizing plasma chemical vapor deposition (PECVD).
8) And manufacturing a gate electrode, namely depositing four layers of metals of Ti (20 nm)/Al (100 nm)/Ni (45 nm)/Au (55 nm) by using an electron beam evaporation system after photoetching and developing, and stripping the metals to form the gate electrode. 9) Surface passivation by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 300 ℃
And the 300nm thick SiO 2 passivation layer weakens the influence of the ambient atmosphere on the device characteristics.
10 Opening the window, namely corroding the passivation layer at the electrode and opening the window lead. Samples were rubberized (using AZ6130
Positive photoresist), spin (forward 600rpm-3s, backward 1000 rpm-20 s, final photoresist thickness of 2 um), photoetching, developing (90 seconds), and etching at the electrode after surface passivation by ICP etching to form a window.
11 Manufacturing metal interconnection lines, namely depositing 500nm metal aluminum Al by using a magnetron sputtering method after photoetching development, and forming the interconnection lines after metal stripping.
12 Electrode lead wire is formed by using any one of magnetron sputtering method, electron beam evaporation method and thermal evaporation method to make electrode
Depositing metal at the position to manufacture a bonding pad and conducting wire leading;
13 And (3) circuit connection, namely packaging the bare die with the good lead, and connecting each component of the rear-end interface circuit on the same PCB board so as to finish circuit connection of the one-dimensional matrix Hall sensor chip.
14 Appearance design is carried out on the whole system, and the manufacture of the instrument is completed.
Fig. 29 shows the relationship between the magnetic field B and the hall output voltage V O under static measurement of the nth (n=1 to 10) matrix element in the sensor chip designed by the present invention, wherein the exciting current I bias =1 mA, the gain a in the adjustable gain amplifying circuit is adjusted to be a fixed value 275, the reference voltage circuit provides the reference voltage V ref =1.65V, and the measuring magnetic field range is-250 mt to 250mt. As can be seen from the figure, as the magnetic field in the environment increases, the hall voltage detected by each element through the back-end interface circuit also increases linearly, and the sensitivity of 10 elements is basically the same, which is about 120 times that of a single third-generation semiconductor hall sensor respectively at 7.73mV/mT(N＝1)、7.74mV/mT(N＝2)、7.74mV/mT(N＝3)、7.73mV/mT(N＝4),7.72mV/mT(N＝5)、7.72mV/mT(N＝6)、7.72mV/mT(N＝7)、7.71mV/mT(N＝8)、7.71mV/mT(N＝9)、7.71mV/mT(N＝10),. Meanwhile, the linearity is higher, which respectively reaches 99.898%, 99.969%, 99.928%, 99.941%, 99.899%, 99.9% and 99.902%. This means that when the magnetic field distribution in the environment is different, each matrix element can detect the magnetic field perpendicular to the matrix element, and the magnetic field is reflected by the Hall output voltage V O, so that accurate real-time static measurement of the magnetic field distribution is realized.
FIG. 30 shows the relationship between the magnetic field B and the Hall output voltage V O under dynamic measurement of a single matrix element of the sensor chip of the present invention, wherein the magnetic field source provides a sinusoidal alternating magnetic field with a peak-to-peak value Bp-p of 17.798G and a frequency f of 5Hz, and other test conditions are the same as those of the static test. From the figure, it can be seen that the sinusoidal variation of the magnetic field in the environment is also generated by the sinusoidal variation of the magnetic field with a frequency of 5Hz, which is detected by the matrix elements through the back-end interface circuit, which indicates that each matrix element can basically indiscriminately follow the variation of the magnetic field in the environment at a lower frequency, thereby realizing real-time dynamic measurement of the magnetic field distribution.
In summary, the experimental verification result of the embodiment can indicate that the high-integration matrix magnetic sensor chip designed by the application of the invention can realize real-time static and dynamic measurement of the magnetic field distribution perpendicular to the surface of the device in one-dimensional, two-dimensional and even three-dimensional space, and has higher sensitivity, linearity and accuracy.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should be covered by the protection scope of the present invention by making equivalents and modifications to the technical solution and the inventive concept thereof.
Claims (10)
1. A high-integration matrix type magnetic sensing chip structure is characterized by comprising a plurality of matrix elements, a switch matrix and a rear end interface circuit, wherein the switch matrix is sequentially connected with the matrix elements and the rear end interface circuit, the matrix elements comprise a cross-shaped horizontal Hall element and a switch device, the switch matrix consists of the switch devices in the matrix elements, the cross-shaped horizontal Hall element matrix is an N X M Hall element formed by a 1X M Hall element matrix, each row of the N X M Hall element matrix is an integral type, for the cross-shaped horizontal Hall element matrix, electrodes C2 of each Hall element are connected together to be grounded, electrodes S1 and S2 are arranged at the leftmost end and the rightmost end of each row of the 1X M Hall element matrix, the switch device comprises a grid G, a source S and a drain D, and the electrodes C2 are connected with the source S through metal interconnection lines.
2. The high-integration matrix magnetic sensor chip structure of claim 1, wherein the cross-shaped horizontal hall element is made of Si body material or GaN, gaAs, inSb, inAs, gaO two-dimensional electron gas channel material or graphene two-dimensional material.
3. The high-integration matrix magnetic sensing chip structure of claim 1, wherein the heterojunction structure formed by two-dimensional electron gas channel materials comprises a substrate, a buffer layer, a channel layer and a barrier layer, the two-dimensional electron gas channel material heterojunction structure formed by the buffer layer, the channel layer and the barrier layer sequentially grows on the substrate, the horizontal Hall element and a switching device are arranged above the channel layer, the horizontal Hall element body is formed by the barrier layer in a cross shape, the four ends of the barrier layer are respectively provided with an electrode C1, an electrode C2, an electrode S1 and an electrode S2, the switching device source level S and the drain level D are arranged on the channel layer, a dielectric layer extending to the barrier layer is arranged on the channel layer, the grid G is arranged above the dielectric layer, and the electrode C2 is connected with the source level S through a metal interconnection line.
4. The high-integration matrix magnetic sensor chip structure of claim 3, wherein the substrate is one of silicon, silicon carbide and sapphire or a material homogeneous with the channel layer, and the buffer layer is one of AlN and GaN or a superlattice structure material.
5. The high integration matrix magnetic sensor chip structure of claim 3, wherein the channel layer is one of GaN, gaAs, inSb, inAs, gaO and the barrier layer is a heterojunction material capable of forming a two-dimensional electron gas channel with the channel layer.
6. The high-integration matrix magnetic sensor chip structure of claim 3, wherein the dielectric layer is one of Al2O3, si3N4, siO2 and SiON, and the metal interconnection line is one of copper, tungsten, aluminum and cobalt.
7. The high-integration matrix magnetic sensor chip structure of claim 3, wherein the thickness of the buffer layer is 10-100 nm, the thickness of the channel layer is 0.1-10 μm, the thickness of the barrier layer is 5-100 nm, and the thickness of the dielectric layer is 20-50 nm.
8. A high-integration matrix type magnetic sensing chip circuit is characterized by comprising a power supply module, an excitation power supply, a reference voltage source, an adjustable gain amplifier, a voltage regulator, an AD converter, a microprocessor, a switch matrix and an N X M Hall matrix element, wherein the power supply module is respectively connected with the reference voltage source, the switch matrix and the microprocessor, the reference voltage source is respectively connected with the excitation power supply, the adjustable gain amplifier and the voltage regulator, the excitation power supply is sequentially connected with the N X M Hall matrix element, the adjustable gain amplifier, the voltage regulator, the AD converter and the microprocessor, and the switch matrix is connected with the N X M Hall matrix element and controlled by the microprocessor.
9. The high-integration matrix type magnetic sensor chip circuit according to claim 8, wherein the n×m hall element comprises a cross-shaped horizontal hall element and a switching device, the switching matrix is composed of the switching devices in the element, the cross-shaped horizontal hall element matrix is an n×m matrix array composed of 1×m hall element matrices with each row being an integral type, for the cross-shaped horizontal hall element matrix, the electrode C2 of each hall element is connected to the ground, the electrode S1 and the electrode S2 are arranged only at the leftmost end and the rightmost end of each row of 1×m hall element matrix, the switching device comprises a grid electrode G, a source electrode S and a drain electrode D, and the electrode C1 is connected with the source electrode S through a metal interconnection line.
10. The manufacturing method of the high-integration matrix type magnetic sensing chip is characterized by comprising the following steps of:
s1, cleaning a substrate, namely preparing a substrate material, cleaning the substrate, and removing pollutants on the surface of the substrate;
S2, epitaxial growth, namely, for a channel material heterojunction structure device, epitaxially growing a two-dimensional electron gas channel material heterojunction structure and a buffer layer by utilizing any one of a metal organic compound chemical vapor deposition method, a molecular beam epitaxy method and a hydride vapor phase epitaxy method, for a two-dimensional material device, growing a two-dimensional material by utilizing any one of a mechanical stripping method, a reduction oxidation method, a silicon carbide surface epitaxial growth method and a chemical vapor deposition CVD method, and transferring the two-dimensional material to a target substrate, wherein the thickness of the generated channel layer is 0.1-10 mu m, the thickness of a barrier layer on the channel layer is 5-100 nm, and the buffer layer is of an AlN, gaN or superlattice structure and has the thickness of 10-100 nm;
s3, mesa etching, namely etching the epitaxially grown sample by using an inductively coupled plasma etching method after photoetching development, wherein the mesa etching depth is 50-800 nm, the etching depth is 1-100 nm in step S4, the etching depth is 1-100 nm in step S6, and the deposition thickness is 5-50 nm in step S7;
S4, shallow etching, namely performing photoetching development on the sample subjected to mesa etching isolation, and performing shallow etching by using an inductive coupling plasma etching method, wherein the heterojunction structure device of the channel material is used for realizing a 2DEG contact mesa in the channel material;
S5, manufacturing electrodes by ohmic contact, namely depositing composite metal by an electron beam evaporation system after photoetching development, and forming good ohmic contact by a rapid thermal annealing process to manufacture electrodes C1, C2, S1, S2, a source electrode S and a drain electrode D;
s6, etching the gate groove, namely, preparing samples of the electrodes C1, C2, S1, S2, the source electrode S and the drain electrode D, and etching the gate groove by using an inductively coupled plasma etching method;
S7, gate dielectric deposition, namely performing gate groove interface treatment on the sample subjected to gate groove etching by adopting an alkaline solution with nitrogen element, and depositing the gate dielectric by utilizing any one of a metal organic compound chemical vapor deposition method, a plasma chemical vapor deposition method, an atomic layer deposition method, a low-pressure chemical vapor deposition method and a magnetron sputtering method;
s8, manufacturing a gate electrode, namely depositing composite metal by using an electron beam evaporation system after photoetching development, and stripping the metal to form the gate electrode;
S9, surface passivation, namely adopting any one of a plasma enhanced chemical vapor deposition method, a magnetron sputtering method, an atomic layer deposition method and an electron beam evaporation method to deposit SiO2 for device passivation;
S10, opening a window, namely photoetching and corroding a passivation layer at the electrode to form the window;
s11, manufacturing metal interconnection lines, namely depositing metal by using an electron beam evaporation system to form the interconnection lines after photoetching development;
s12, an electrode lead is formed by depositing metal at an electrode to manufacture a bonding pad and lead the bonding pad by adopting any one of a magnetron sputtering method, an electron beam evaporation method and a thermal evaporation method;
S13, circuit connection, namely packaging the bare die with the good lead, and connecting each component of the rear-end interface circuit on the same PCB board so as to finish circuit connection of the high-integration matrix magnetic sensing chip;
S14, appearance design is carried out on the whole system, and manufacturing of the instrument is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310917823.XA CN119375788A (en) | 2023-07-25 | 2023-07-25 | Highly integrated matrix magnetic sensor chip structure, circuit and manufacturing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119758850A (en) * | 2025-03-05 | 2025-04-04 | 赛卓电子科技(上海)股份有限公司 | Row and column scanning control system based on sleep and wake-up function chip |
| CN119847850A (en) * | 2025-03-18 | 2025-04-18 | 赛卓电子科技(上海)股份有限公司 | Linear Hall chip suitable for three-mode keyboard and application device thereof |
| CN120753661A (en) * | 2025-09-08 | 2025-10-10 | 北京大学口腔医学院 | Tongue muscle pressure intelligent detection equipment |
| CN120753661B (en) * | 2025-09-08 | 2026-04-28 | 北京大学口腔医学院 | Tongue muscle pressure intelligent detection equipment |
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2023
- 2023-07-25 CN CN202310917823.XA patent/CN119375788A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119758850A (en) * | 2025-03-05 | 2025-04-04 | 赛卓电子科技(上海)股份有限公司 | Row and column scanning control system based on sleep and wake-up function chip |
| CN119758850B (en) * | 2025-03-05 | 2025-07-18 | 赛卓电子科技(上海)股份有限公司 | Row and column scanning control system based on sleep and wake-up function chip |
| CN119847850A (en) * | 2025-03-18 | 2025-04-18 | 赛卓电子科技(上海)股份有限公司 | Linear Hall chip suitable for three-mode keyboard and application device thereof |
| CN120753661A (en) * | 2025-09-08 | 2025-10-10 | 北京大学口腔医学院 | Tongue muscle pressure intelligent detection equipment |
| CN120753661B (en) * | 2025-09-08 | 2026-04-28 | 北京大学口腔医学院 | Tongue muscle pressure intelligent detection equipment |
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