CN115079337B - Preparation method of quantum dot film, quantum dot film and backlight module - Google Patents
Preparation method of quantum dot film, quantum dot film and backlight module Download PDFInfo
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- CN115079337B CN115079337B CN202210662662.XA CN202210662662A CN115079337B CN 115079337 B CN115079337 B CN 115079337B CN 202210662662 A CN202210662662 A CN 202210662662A CN 115079337 B CN115079337 B CN 115079337B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
- G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
- G02B6/004—Scattering dots or dot-like elements, e.g. microbeads, scattering particles, nanoparticles
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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Abstract
本发明涉及显示技术领域，涉及一种量子点膜的制备方法、量子点膜及背光模组。制备方法包括步骤：提供基层膜片；在所述基层膜片上打印至少一次光导墨点，所述光导墨点包括固化部和量子点，所述量子点散布于所述固化部内；其中，所述固化部的内层的折射率高于其外层的折射率。在本实施例的量子点膜的制备方法中，通过在基层膜片上打印光导墨点，透过基层膜片的光线进入光导墨点之后，由于固化部的内层折射率高于外侧的折射率，避开量子点的光线能够通过固化部的内壁反射后在固化部内继续进行传导，直至接触并激发量子点，激发后的光电再透射出光导墨点并继续传导，由此可以有效提高量子点膜中量子点与光线的接触可能性，从而有效改善量子点膜的光强。
The present invention relates to the field of display technology, and to a method for preparing a quantum dot film, a quantum dot film, and a backlight module. The preparation method comprises the steps of: providing a base film; printing at least one photoconductive ink dot on the base film, wherein the photoconductive ink dot comprises a curing part and quantum dots, and the quantum dots are dispersed in the curing part; wherein the refractive index of the inner layer of the curing part is higher than the refractive index of the outer layer thereof. In the preparation method of the quantum dot film of the present embodiment, by printing the photoconductive ink dot on the base film, after the light passing through the base film enters the photoconductive ink dot, since the refractive index of the inner layer of the curing part is higher than the refractive index of the outer layer, the light avoiding the quantum dot can be reflected by the inner wall of the curing part and continue to be conducted in the curing part until it contacts and excites the quantum dot, and the photoelectricity after excitation then transmits out of the photoconductive ink dot and continues to be conducted, thereby effectively improving the contact possibility between the quantum dots and the light in the quantum dot film, thereby effectively improving the light intensity of the quantum dot film.
Description
Technical Field
The invention relates to the technical field of display, in particular to a preparation method of a quantum dot film, the quantum dot film and a backlight module.
Background
With the development of display technology, quantum dot films are increasingly introduced into backlight modules in order to improve display performance of the backlight modules. However, the existing quantum dot film has a problem of insufficient haze, so that the market performance is not ideal, and because the quantum dot film has high haze requirements, when light is conducted in the quantum dot film, a large amount of light is conducted continuously while avoiding the quantum dots, so that the waste of the quantum dots is caused to influence the penetrating brightness of the quantum dot film, and in order to obtain better diffraction effect and improve the contact rate of the quantum dots and the light, a large amount of quantum dot material is required to be added in the quantum dot film, so that the possibility of the contact of the quantum dots and the light is improved, and the cost of the quantum dot film is high.
Disclosure of Invention
The invention provides a preparation method of a quantum dot film, the quantum dot film and a backlight module, which are used for solving the problem of high cost caused by the fact that a large number of quantum dots are required to be added in the traditional quantum dot film.
The invention provides a preparation method of a quantum dot film, which comprises the following steps:
Providing a base layer membrane;
Printing at least one photoconductive ink dot on the base film, wherein the photoconductive ink dot comprises a curing part and quantum dots, and the quantum dots are scattered in the curing part; wherein the refractive index of the inner layer of the curing part is higher than that of the outer layer thereof.
According to one embodiment of the invention, the photoconductive ink dot comprises a first outer surface and a second outer surface which are connected, wherein the first outer surface is attached to the base film, and the second outer surface is at least partially in a cambered surface structure.
According to one embodiment of the invention, the volume of the photoconductive ink dots is 2-8pL.
According to one embodiment of the invention, the concentration of the quantum dots in the photoconductive ink dots is not less than 9mg/mL.
According to one embodiment of the present invention, the printing of at least one photoconductive ink dot on the base film sheet, the photoconductive ink dot including a cured portion and quantum dots, the quantum dots being dispersed within the cured portion includes:
printing multiple photoconductive ink points on the base film sheet respectively to form at least one photoconductive ink point with the overall height of 25-31 μm.
According to one embodiment of the present invention, the printing of the photoconductive ink dots on the base film sheet at least once includes a curing section and quantum dots, the quantum dots being dispersed in the curing section, and the height of each printing of the photoconductive ink dots is 12-18 μm.
According to one embodiment of the invention, the refractive index of the photoconductive ink dots is 1.55-1.65.
According to one embodiment of the present invention, after the step of printing the photoconductive ink dots at least once on the base film sheet, the preparation method further comprises the steps of:
coating an adhesive on the side of the base film facing the photoconductive ink dots;
providing a cover film and attaching the cover film to a side of the adhesive away from the base film to form an adhesive layer between the base film and the cover film.
According to one embodiment of the invention, the adhesive layer has a thickness of 35-45 μm.
According to one embodiment of the invention, the refractive index of the adhesive is 1.40-1.50.
According to one embodiment of the present invention, the adhesive member is an oil phase material.
The invention also provides a quantum dot film, which is prepared by the preparation method according to any one of the above.
The invention also provides a backlight module, which comprises the quantum dot film according to any one of the above.
The embodiment of the invention has the following beneficial effects:
In the preparation method of the quantum dot film of the embodiment, after the light passing through the base layer film enters the light guide ink dots by printing the light guide ink dots on the base layer film, the refractive index of the inner layer of the curing part is higher than that of the outer side, so that the light avoiding the quantum dots can be continuously conducted in the curing part after being reflected by the inner wall of the curing part until the quantum dots are contacted and excited, and the excited light is transmitted out of the light guide ink dots again and continuously conducted, thereby effectively improving the contact possibility of the quantum dots and the light in the quantum dot film and further effectively improving the light intensity of the quantum dot film.
When the quantum dot film prepared by the preparation method of the quantum dot film is used, light entering the photoconductive ink dots and avoiding the quantum dots can be reflected on the inner wall of the curing part and continuously conducted in the curing part until the light contacts and excites the quantum dots; compared with the traditional quantum dot film, the quantum dot film of the embodiment can achieve the aim of improving the contact possibility of the quantum dots and light without improving the concentration of the quantum dots so as to improve the utilization rate of the quantum dots, and can effectively improve the light intensity of the quantum dot film and optimize the manufacturing cost on the premise of guaranteeing the haze of the quantum dot film.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Wherein:
FIG. 1 is a schematic flow chart of a method for preparing a quantum dot film in an embodiment of the invention;
FIG. 2 is a flow chart of a method for preparing a quantum dot film according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure of a quantum dot film in an embodiment of the invention;
FIG. 4 is an enlarged schematic view of a portion of a quantum dot film in an embodiment of the invention;
FIG. 5 is a schematic diagram of a backlight module according to an embodiment of the invention;
reference numerals:
1. A backlight module; 10. a quantum dot film; 100. a base layer membrane; 200. an adhesive structure; 210. photoconductive ink dots; 211. a curing section; 2111. a first outer surface; 2112. a second outer surface; 212. a quantum dot; 220. an adhesive member; 300. covering the membrane; 20. a liquid crystal panel; 30. a brightness enhancement film; 40. a light emitting member; 41. a lighting member; 42. a light guide plate; 43. and a reflective sheet.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 and 2, the embodiment of the invention provides a preparation method of a quantum dot film 10, which comprises the following steps:
step S100, providing a base film 100;
step 200, printing at least one photoconductive ink dot 210 on the base film 100, wherein the photoconductive ink dot 210 comprises a curing part 211 and quantum dots 212, and the quantum dots 212 are scattered in the curing part 211; wherein the refractive index of the inner layer of the cured portion 211 is higher than the refractive index of the outer layer thereof.
In the preparation method of the quantum dot film 10 of the embodiment, after the light passing through the base film 100 enters the light guide ink dots 210 by printing the light guide ink dots 210 on the base film 100, the light avoiding the quantum dots 212 can continue to conduct in the curing part 211 after being reflected by the inner wall of the curing part 211 due to the refractive index of the inner layer of the curing part 211 being higher than the refractive index of the outer side until the quantum dots 212 are contacted and excited, and the excited light is transmitted out of the light guide ink dots 210 and continues to conduct, so that the contact possibility of the quantum dots 212 and the light in the quantum dot film 10 can be effectively improved, and the light intensity of the quantum dot film 10 is effectively improved.
It should be noted that, in the conventional quantum dot film, when light is conducted in the quantum dot film, a large amount of light always directly passes through the quantum dot film and does not contact with the quantum dots therein, which results in that the color coordinates of the emitted light cannot be white light, so that the waste of the quantum dots in the quantum dot film is caused, while in the conventional quantum dot film, in order to improve the contact possibility between the quantum dots and the light, an improved manner of increasing the number (i.e. the concentration) of the quantum dots in the quantum dot film is adopted, and the manufacturing cost of the quantum dot film is increased due to the higher manufacturing cost of the quantum dots.
Specifically, in an embodiment, the curing portion 211 may be made of a photo-curing resin material, the base film 100 is made of a PET material, the photo-conductive ink dots 210 containing the quantum dots 212 are printed onto the base film 100 by using a UV printer, the light transmitted by the base film 100 can be injected into the photo-conductive ink dots 210, one part of the light directly contacts with the quantum dots 212 in the curing portion 211 and excites the light to emit white light, the other part of the light can avoid the quantum dots 212 in the curing portion 211, the light can contact with any quantum dot 212 in the curing portion 211 after being reflected at least once by the inner wall of the curing portion 211, and excite the quantum dots 212 to emit white light, and the white light is transmitted through the curing portion 211 and continuously transmitted.
Specifically, in one embodiment, the photo-curable resin material of the cured portion 211 is: tripropylene glycol diacrylate, tetrahydro pyran acrylate, ethoxylated (10) bisphenol A diacrylate, polyethylene glycol (600) diacrylate, o-phenylphenylethoxy ethyl acrylate, 2-phenoxyethyl acrylate, P-phenyl methacrylate, ST-ZM-P9 dispersion, 1-glycosyl cyclohexyl phenyl ketone, (2, 4, 6-trimethylbenzoyl) diphenyl phosphine oxide.
In some embodiments, the quantum dots 212 may be formed using group II-VI or group III-V semiconductor materials; specifically, in the present embodiment, the quantum dots 212 may be CdSe quantum dots, and the size of the quantum dots 212 is 1-20nm.
Referring to fig. 3 and 4, in one embodiment, photoconductive ink 210 includes a first outer surface 2111 and a second outer surface 2112 that are contiguous, first outer surface 2111 being in contact with base film 100, and second outer surface 2112 being at least partially arcuate.
In this embodiment, the photoconductive ink dots 210 are attached to the light emitting side of the base film 100 by printing, and it can be understood that when the photoconductive ink dots 210 are output from the printer, they are in a dot-like liquid state, and when the photoconductive ink dots 210 are attached to the base film 100, the contact surface between the photoconductive ink dots 210 and the base film 100 is the first outer surface 2111, at this time, the first outer surface 2111 is in a planar state, and a spherical structure is formed under the action of the liquid tension of the photoconductive ink dots 210, even if the second outer surface 2112 forms an arc structure, so that the light entering the curing portion 211 can reflect through the inner side surface of the arc structure formed by the second outer surface 2112, so as to make the light emit toward the quantum dots 212.
In addition, it should be noted that, in the period of using the conventional quantum dot film for 5 to 10 ten thousand hours, the average attenuation rate of the conventional quantum dot film reaches 20% to 25%, so that the color gamut is very good, but the durability of the combination form of the color filter and the LCD in the conventional backlight module is far inferior to that of the conventional backlight module, wherein one reason is that the water vapor in the external environment is in contact with the quantum dots in the quantum dot film to cause the extinction thereof, and the conventional quantum dot film cannot effectively isolate the water vapor because the water vapor is a microstructure.
When the quantum dot film 10 of the above embodiment is adopted, when the moisture contacts the light guide ink dots 210, the second outer surface 2112 of the quantum dot film 212 forms an arc structure, so that the moisture is prevented from adhering to the second outer surface 2112, and the moisture is prevented from entering the curing portion 211 to contact the quantum dot film 212, so that the isolation effect of the light guide ink dots 210 on the moisture is effectively improved, and the durability of the quantum dot film 10 is improved.
Specifically, the volume of photoconductive ink 210 is 2-8pL (picoliters).
In one embodiment, the cured portion 211 of the photoconductive dot 210 has a dot volume of 5pL and is printed on the base film 100 in dot form by a UV printer. By this arrangement, the photoconductive ink dots 210 can have a smaller volume on the premise of having the quantum dots 212, thereby realizing the need for light and thin quantum dot film 10. In other embodiments, the volume of the photoconductive ink dots 210 may be 2pL, 3pL, 8pL, etc., without limitation.
Further, step S200 includes: the photoconductive ink dots 210 are printed on the base film sheet 100 a plurality of times, respectively, so that the overall height of at least one photoconductive ink dot 210 formed is 25 to 31 μm.
It can be appreciated that when the preparation method of the present embodiment is adopted, the quantum dot 212 having at least one lamination layer can be formed on the base film 100 by at least one printing, and then the overall height of the curing portion 211 can be controlled within the range of 25±5 μm by adjusting the light source and the printing speed of the UV printer, and in a preferred embodiment, the overall height of the curing portion 211 can be 28±3 μm, which is specifically determined according to the performance and the design requirement of the quantum dot film 10, and is not limited only herein.
Specifically, the concentration of quantum dots 212 in photoconductive ink dots 210 is not less than 9mg/mL.
By controlling the concentration of the quantum dots 212 in the curing portion 211, the light intensity effect of the photoconductive ink dots 210 can be ensured, thereby achieving the light intensity requirement of the quantum dot film 10, and of course, along with the increase of the concentration of the quantum dots 212, the preparation cost of the quantum dot film 10 is increased. In one embodiment, the concentration of quantum dots 212 in photoconductive ink dots 210 is 9.6mg/mL.
Further, in step S200, the height of the photoconductive ink dots 210 is 12-18 μm each time.
In one embodiment, the quantum dot film 10 may have a compact structure on the premise of improving the light intensity of the quantum dot film 10 by printing the photoconductive ink dots 210 having a height of 12-18 μm twice on the base film 100 such that the photoconductive ink dots 210 having a total height of 25-31 μm are formed on the base film 100.
The specific processing mode is as follows: the photoconductive ink dots 210 were printed on the base film sheet 100 at a speed of 0.4m/min using a UV printer, and each photoconductive ink dot 210 had a drop volume of 5pl, and was cured using a light source having a wavelength of 365nm, a curing energy of 15mW/m 2, and a height of 15.+ -. 2 μm, and then the photoconductive ink dots 210 were repeatedly printed once again so that the photoconductive ink dots 210 as a whole reached a thickness of 28.+ -. 3. Mu.m.
In particular, in some embodiments, the index of refraction of photoconductive ink 210 is 1.55-1.65.
By controlling the refractive index of the photoconductive ink dots 210, the reflection and refraction directions of the light rays of the quantum dot film 10 can be adjusted to improve the light intensity performance of the quantum dot film 10. In one embodiment, the index of refraction of photoconductive ink 210 can be 1.60.
Further, the following steps are included after step S200:
Step S300, coating an adhesive piece 220 on one side of the base film 100 facing the photoconductive ink point 210;
in step S400, the cover film 300 is provided, and the cover film 300 is attached to the side of the adhesive member 220 away from the base film 100, so as to form an adhesive layer between the base film 100 and the cover film 300.
Referring to fig. 3, in the present embodiment, the cover film 300 may also be a PET film, and the thickness of the cover film 300 is 12-50 μm, wherein the adhesive member 220 may be polyurethane and the thickness H is 35-45 μm, and the thickness of the base film 100 is 50-188 μm.
Specifically, the refractive index of the adhesive member 220 is 1.40-1.50.
Further, the adhesive 220 is made of an oil phase material.
As shown in fig. 3, in one embodiment, the distance H 'between the photoconductive ink point 210 and the cover film 300 is at least 5 μm, and H' < H; when the adhesive member 220 adopts polyurethane glue, the adhesive member 220 can be provided with oil phase performance so as to improve the water-proof property of the quantum dot film 10; in this embodiment, the refractive index of the polyurethane glue adhesive 220 may be 1.44. Specifically, the thickness of the PET film sheet of the base film sheet 100 and the cover film sheet 300 is 12-188 μm, and the haze is less than 1.5%, and the transmittance is more than 90%.
Referring to fig. 3 and 4, the present invention further provides a quantum dot film 10, which is prepared by using the preparation method of the quantum dot film in any one of the above embodiments.
It can be understood that, when the quantum dot film 10 is prepared by using the preparation method of the quantum dot film 10 of the embodiment, the light entering the photoconductive ink dots 210 and avoiding the quantum dots 212 can be reflected on the inner wall of the curing portion 211 and be continuously conducted inside the curing portion until contacting and exciting the quantum dots 212; compared with the traditional quantum dot film 10, the quantum dot film 10 of the embodiment can achieve the purpose of improving the contact possibility of the quantum dots 212 and light to improve the utilization rate of the quantum dots 212 without improving the concentration of the quantum dots 212, and can effectively improve the light intensity of the quantum dot film 10 and optimize the manufacturing cost on the premise of ensuring the haze of the quantum dot film 10.
Referring to fig. 3 and 4, the present invention further provides a quantum dot film 10, which may be prepared by the preparation method according to any one of the above embodiments, and specifically, the quantum dot film 10 of the present embodiment includes a base film 100, an adhesive structure 200, and a cover film 300; the cover film 300 is spaced from the base film 100, and the cover film 300 is located at the light emitting side of the base film 100; the bonding structure 200 is disposed between the base film 100 and the cover film 300, the bonding structure 200 includes a bonding member 220 and a photoconductive ink dot 210, the bonding member 220 is filled between the base film 100 and the cover film 300, and the photoconductive ink dot 210 is accommodated in the bonding member 220; wherein, a plurality of quantum dots 212 are arranged at intervals inside the photoconductive ink dots 210.
When the quantum dot film 10 of the present embodiment is used, light entering the photoconductive ink dots 210 and avoiding the quantum dots 212 can be reflected on the inner wall of the curing part 211 and continuously conducted inside the curing part until contacting and exciting the quantum dots 212; compared with the traditional quantum dot film 10, the quantum dot film 10 of the embodiment can achieve the purpose of improving the contact possibility of the quantum dots 212 and light to improve the utilization rate of the quantum dots 212 without improving the concentration of the quantum dots 212, and can effectively improve the light intensity of the quantum dot film 10 and optimize the manufacturing cost on the premise of ensuring the haze of the quantum dot film 10.
Referring to fig. 3, in one embodiment, photoconductive ink dots 210 are attached to the side of base film sheet 100 facing cover film sheet 300.
In this embodiment, by disposing the photoconductive ink dots 210 so as to be attached to the base film sheet 100, the energy loss when light is conducted between the base film sheet 100 and the photoconductive ink dots 210 can be reduced; in other embodiments, photoconductive ink dots 210 may also be suspended within adhesive 220 and spaced apart from base film 100 and cover film 300 after curing; of course, in some embodiments, the photoconductive ink dots 210 may also be attached to the side of the cover film 300 facing the base film 100, whereby the photoconductive effect of the photoconductive ink dots 210 may also be achieved.
Specifically, the photoconductive ink dot 210 further includes a curing portion 211, a plurality of quantum dots 212 are dispersed in the curing portion 211, and the curing portion 211 is attached to the base film 100. In the present embodiment, the curing part 211 may be a photo-curable resin, and the curing part 211 having the quantum dots 212 mixed therein may be outputted by a UV printer to form the photo-conductive ink dots 210 between the base film sheet 100 and the cover film sheet 300 when preparing the photo-conductive ink dots 210.
In this embodiment, the adhesive structure 200 includes a plurality of photoconductive ink dots 210, and at least two photoconductive ink dots 210 are spaced apart.
It will be appreciated that by spacing at least two photoconductive ink dots 210, it is possible to avoid affecting the light conduction effect within photoconductive ink dots 210 by overlapping the two.
Referring to fig. 3, in one embodiment, the photoconductive ink dots 210 are spaced apart from the cover film 300, and the distance H' between the photoconductive ink dots 210 and the cover film 300 is at least 5 μm.
By the arrangement, on one hand, the bonding piece 220 can be fully covered on the photoconductive ink dots 210, and the effect of isolating moisture of the quantum dot film 10 can be further improved by arranging the bonding piece 220; meanwhile, as the cover film 300 and the photoconductive ink dots 210 are arranged at intervals, the cover film 300 can be contacted with the adhesive piece 220 when being compounded with the adhesive structure 200, so that the curing part 211 is prevented from being damaged, the quantum dots 212 in the curing part 211 are prevented from being damaged, and the preparation quality of the quantum dot film 10 is further ensured.
Referring to fig. 3, in particular, the base film sheet 100 has a thickness of 50-188 μm, the cover film sheet 300 has a thickness of 12-50 μm, and the adhesive structure 200 has a thickness H of 35-45 μm.
Referring to fig. 5, the present invention further provides a backlight module 1, which includes a liquid crystal screen 20, a brightness enhancement film 30, a light emitting member 40, and the quantum dot film 10 in any of the above embodiments; the light emitting member 40, the quantum dot film 10, the brightness enhancement film 30 and the liquid crystal panel 20 are sequentially arranged along the light emitting direction of the backlight module 1.
It can be understood that, in the backlight module 1 of the present embodiment, by providing the quantum dot film 10 in any of the above embodiments, the light entering the photoconductive ink dots 210 and avoiding the quantum dots 212 can be reflected on the inner wall of the curing portion 211 and be continuously conducted therein until contacting and exciting the quantum dots 212; compared with the traditional quantum dot film 10, the quantum dot film 10 of the embodiment can achieve the purpose of improving the utilization rate of the quantum dots 212 by improving the contact possibility of the quantum dots 212 and light without improving the concentration of the quantum dots 212, and can effectively improve the light intensity of the quantum dot film 10 on the premise of ensuring the haze of the quantum dot film 10 so as to achieve the purpose of improving the display effect of the backlight module 1.
Referring to fig. 5, in an embodiment, the light emitting device 40 includes an illumination device 41, a light guide plate 42 and a reflective sheet 43, wherein the illumination device 41 is disposed on one side of the light guide plate 42, the light guide plate 42 is disposed on one side of the quantum dot film 10 away from the brightness enhancement film 30, and the reflective sheet 43 is disposed on one side of the light guide plate 42 away from the brightness enhancement film 30.
Thus, the light emitted by the illumination member 41 can be transmitted through the light guide plate 42, and the reflection sheet 43 can reflect the light emitted toward the quantum dot film 10, so as to improve the light emitting effect of the light emitting member 40. In particular, the lighting 41 may employ an LED light source.
In this regard, referring to fig. 4, when light is transmitted along the light-emitting direction, the light can be output through the base film 100 to enter the photoconductive ink dot 210, after the light enters the photoconductive ink dot 210, since the refractive index of the inner side of the curing portion 211 is higher than that of the outer layer thereof, the light can be reflected by the inner wall of the curing portion 211 to be conducted toward and released from the quantum dot 212 in the curing portion 211, when the backlight module 1 adopts blue light (wavelength 465 nm), the blue light not contacting the quantum dot 212 can be repeatedly reflected by the inner wall of the curing portion 211 until the quantum dot 212 is excited (CdSe quantum dot can be adopted), the quantum dot 212 can be converted into white light after being excited, the Haze (Haze) of the quantum dot film 10 of the present embodiment can reach 92%, the penetration (trans-parent) can reach 70%, and meanwhile, since the photoconductive ink dot 210 has a marginal interface (i.e. the boundary of the light guide dot 210 generates a separation effect to separate water vapor), the blue light from the quantum dot 212 can be effectively blocked and attenuated, and the quantum dot 212 can be prevented from being attenuated rapidly, when the quantum dot is subjected to a test in a test of being lower than the CIE1, at 1931, 000 x-y, and the CIE 1% is lower than the test value in the test of 1, at 1931.
The present application provides experimental data for the following 6 specific examples:
Specifically, the test conditions for the quantum dot film 10 are:
Referring to GB/T1740-2007 or ISO4611:2010, the test method is specifically as follows:
high-temperature and high-humidity testing is carried out by using a high-temperature furnace, and the continuous testing is carried out for 240 hours under the conditions of the temperature of 60 ℃ and the relative humidity of 95 percent RH;
the quantum dots 212 are CdSe quantum dots, and the configuration and concentration of the cured portion 211 are respectively:
the emission peak of the red quantum dot is 635+/-10 nm, the half-peak width is less than 30nm, and the mass is 18.9g;
The emission peak of the green quantum dot is 520+/-10 nm, the half-peak width is less than 30nm, and the mass is 125.3g;
Dispersed in 15L of the cured portion 211, the concentration of the quantum dots 212 was 9.61mg/ml.
Comma coating is performed on the base film sheet 100 by using polyurethane glue; other parameters are shown in the following table:
| Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | Example 6 | |
| Base layer film thickness (mum) | 50 | 75 | 188 | 188 | 50 | 50 |
| Thickness of adhesive layer (mum) | 35 | 35 | 35 | 40 | 40 | 45 |
| Thickness of cover film (mum) | 12 | 25 | 50 | 12 | 50 | 50 |
| Quantum dot film thickness (mum) | 97 | 135 | 273 | 240 | 140 | 145 |
| Transmittance (%) | 78 | 75 | 73 | 74 | 76 | 75 |
| Haze (%) | 81 | 83 | 85 | 82 | 81 | 80 |
In the test process, a blue LED lamp source (24V/40 mA) is adopted, the emission wavelength is 470nm, the temperature is 85 ℃, the humidity is 85% RH (namely double-85 test), and the test time is 1000 hours. As a collocation test CIE1931xy color coordinates, the luminance and gamut examples result as follows:
| Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | Example 6 | |
| X | 0.3113 | 0.3122 | 0.3125 | 0.3126 | 0.3119 | 0.3121 |
| Post test x | 0.3107 | 0.3118 | 0.3121 | 0.3122 | 0.3114 | 0.3117 |
| Delta X differences | -0.0006 | -0.0004 | -0.0004 | -0.0004 | -0.0005 | -0.0004 |
| Y | 0.2837 | 0.2814 | 0.2713 | 0.2765 | 0.2881 | 0.2831 |
| Y after test | 0.2812 | 0.2806 | 0.2706 | 0.2758 | 0.2874 | 0.2825 |
| Delta y difference | -0.0025 | -0.0008 | -0.0007 | -0.0007 | -0.0007 | -0.0006 |
| Luminance (cd/m 2) | 10214 | 10123 | 9985 | 10028 | 10114 | 10127 |
| Luminance after test (cd/m 2) | 10054 | 9987 | 9812 | 9835 | 9973 | 9939 |
| Luminance difference (%) | -1.56 | -1.34 | -1.73 | -1.92 | -1.39 | -1.85 |
| Color gamut | 111.3 | 110.6 | 109.9 | 112.4 | 113.3 | 111.2 |
Note that the color gamut ratio is 100% with reference to sRGB, where luminance is referenced to the luminous efficacy of the blue light source.
In the present application, by using the industrial UV photo-curing printing technology, the curing part 211 individually coats the quantum dots 212, and the light is totally reflected in the curing part 211 using the resin to make the light collide with the quantum dots 212 back and forth and then emitted, so that the blue wavelength light source entering the system is fully collided, thereby reducing the variation of xy value of CIE1931xy, and the quantum dot film 10 can achieve the effect of brightness loss lower than 2% after testing at high temperature and high humidity (85 ℃, 85% rh) and 1000 hours by adopting the encapsulation of the single-dot printing photo-ink dot 210.
In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the apparatus or component referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the embodiments of the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "coupled," "coupled," and "connected" should be construed broadly, and may be either a fixed connection, a removable connection, or an integral connection, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in embodiments of the present invention will be understood in detail by those of ordinary skill in the art.
In embodiments of the invention, unless expressly specified and limited otherwise, a first feature "up" or "down" on a second feature may be that the first and second features are in direct contact, or that the first and second features are in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (11)
1. The preparation method of the quantum dot film is characterized by comprising the following steps of:
Providing a base layer membrane;
printing at least one photoconductive ink dot on the base film, wherein the photoconductive ink dot comprises a curing part and quantum dots, and the quantum dots are scattered in the curing part; wherein, the refractive index of the inner layer of the curing part is higher than that of the outer layer;
the volume of the photoconductive ink dots is 2-8pL; the concentration of the quantum dots in the photoconductive ink dots is not less than 9mg/mL.
2. The method for preparing a quantum dot film according to claim 1, wherein the photoconductive ink dot comprises a first outer surface and a second outer surface which are connected, the first outer surface is attached to the base film, and the second outer surface is at least partially in a cambered surface structure.
3. The method of preparing a quantum dot film according to claim 1, wherein the printing of at least one photoconductive ink dot on the base film sheet, the photoconductive ink dot including a cured portion and quantum dots, the quantum dots being dispersed in the cured portion, comprises:
printing multiple photoconductive ink points on the base film sheet respectively to form at least one photoconductive ink point with the overall height of 25-31 μm.
4. The method of claim 1, wherein the printing of the photoconductive ink dots on the base film sheet at least once includes a curing section and quantum dots, the quantum dots being dispersed in the curing section, and the height of each printing of the photoconductive ink dots is 12-18 μm.
5. The method of claim 1, wherein the refractive index of the photoconductive ink dots is 1.55-1.65.
6. The method of any one of claims 1-5, wherein after the step of printing at least one photoconductive dot on the base film sheet, the method further comprises the steps of:
coating an adhesive on the side of the base film facing the photoconductive ink dots;
providing a cover film and attaching the cover film to a side of the adhesive away from the base film to form an adhesive layer between the base film and the cover film.
7. The method of claim 6, wherein the adhesive layer has a thickness of 35-45 μm.
8. The method of claim 7, wherein the adhesive member has a refractive index of 1.40-1.50.
9. The method of claim 7, wherein the adhesive is an oil phase material.
10. A quantum dot film prepared according to the preparation method of any one of claims 1 to 9.
11. A backlight module comprising the quantum dot film of claim 10.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108020881A (en) * | 2017-12-04 | 2018-05-11 | 福州大学 | It is a kind of to contain light guide plate encapsulating structure of quantum dot micro structure array and preparation method thereof for surface |
| CN108169957A (en) * | 2018-02-07 | 2018-06-15 | 京东方科技集团股份有限公司 | Color diaphragm and preparation method thereof and color membrane substrates |
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| TW201427893A (en) * | 2013-01-07 | 2014-07-16 | 群康科技(深圳)有限公司 | Patterned color conversion film and display using the same |
| EP3208520B1 (en) * | 2014-10-16 | 2023-05-03 | Toppan Printing Co., Ltd. | Quantum dot protective film, quantum dot film using same, and backlight unit |
| CN105990504A (en) * | 2016-07-06 | 2016-10-05 | 华南师范大学 | White LED with quantum dots cured and packaged by UV adhesive as fluorescence conversion material, and preparation method and applications thereof |
| CN108020958B (en) * | 2017-12-04 | 2020-09-01 | 福州大学 | A kind of packaging structure for direct type backlight and its manufacturing method |
| CN110873920B (en) * | 2018-08-29 | 2021-01-22 | Tcl科技集团股份有限公司 | Quantum dot mesh point light guide plate and preparation method thereof |
| EP3763801B1 (en) * | 2019-07-12 | 2022-05-04 | Samsung Display Co., Ltd. | Quantum dot-containing material, method of preparing the same, and optical member and appapratus including the quantum dot-containing material |
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| CN108020881A (en) * | 2017-12-04 | 2018-05-11 | 福州大学 | It is a kind of to contain light guide plate encapsulating structure of quantum dot micro structure array and preparation method thereof for surface |
| CN108169957A (en) * | 2018-02-07 | 2018-06-15 | 京东方科技集团股份有限公司 | Color diaphragm and preparation method thereof and color membrane substrates |
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