CN105304827A - OLED device - Google Patents
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- CN105304827A CN105304827A CN201510732043.3A CN201510732043A CN105304827A CN 105304827 A CN105304827 A CN 105304827A CN 201510732043 A CN201510732043 A CN 201510732043A CN 105304827 A CN105304827 A CN 105304827A
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- oled
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- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000003746 surface roughness Effects 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 12
- 230000008030 elimination Effects 0.000 abstract description 2
- 238000003379 elimination reaction Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 35
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000007788 roughening Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- VQLYBLABXAHUDN-UHFFFAOYSA-N bis(4-fluorophenyl)-methyl-(1,2,4-triazol-1-ylmethyl)silane;methyl n-(1h-benzimidazol-2-yl)carbamate Chemical compound C1=CC=C2NC(NC(=O)OC)=NC2=C1.C=1C=C(F)C=CC=1[Si](C=1C=CC(F)=CC=1)(C)CN1C=NC=N1 VQLYBLABXAHUDN-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 oxygen (nitrogen) compound Chemical class 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an OLED device. The OLED device includes a substrate (1), a first electrode layer (3) and a planarization layer (2) located between the substrate (1) and the first electrode layer (3), a first concave-convex structure (11) is formed on the surface of the substrate (1), and the refractive index of the planarization layer (2) is larger than or equal to that of the first electrode layer (3). The substrate with a roughened surface is utilized to manufacture the OLED device, and light extraction efficiency of the OLED device is improved by elimination of a waveguide mode; and in addition, the planarization layer with a high refraction index is arranged on the roughened substrate, and is of a regular concave-convex structure, and regular unevenness of a cathode is caused by the concave-convex structure, thereby eliminating a surface plasma mode, further limiting loss of light, and greatly improving extraction efficiency of light.
Description
Technical field
The present invention relates to OLED technical field, be specifically related to a kind of OLED.
Background technology
Through the development of nearly 30 years, (English full name is OrganicLightEmittingDevice to organic electroluminescence device, referred to as OLED) as illumination of future generation and Display Technique, have that colour gamut is wide, response is fast, wide viewing angle, pollution-free, high-contrast, the advantage such as complanation, in illumination and display application to a certain extent.
Due to the application of phosphor material, its internal quantum efficiency almost reaches theoretical limiting value 100%, but its external quantum efficiency only has about 20%, and the principal element that restriction external quantum efficiency improves further is the light extraction efficiency of device.
Existing smooth extracting method, can be divided into two classes: outer light extraction method (EES) and interior smooth extraction method (IES) substantially.Described EES is in the outside of device, simple, can carry out respectively with the preparation process of device, and cost is low and be easy to large-scale production, but tired light in the substrate can only be extracted, and limits efficiency of adding lustre to.And IES is built in device inside, to technique and material requirements high, but most of light of loss in device can extract by IES, and this is that EES is incomparable.Light loss pattern main is at present divided into: substrate mode, waveguide mode, surface plasmon polaritons, how the loss of the light of control device inside, and improve external quantum efficiency, this is the technical problem that the present invention needs solution badly.
Summary of the invention
For this reason, in order to improve the light extraction efficiency of OLED further, improving external quantum efficiency, the invention provides a kind of OLED.
The technical scheme adopted is as described below:
A kind of OLED, comprise substrate, the first electrode layer and the planarization layer between described substrate and the first electrode layer, described substrate surface forms the first concaveconvex structure, and the refractive index of described planarization layer is more than or equal to the refractive index of described first electrode layer.
The surface roughness Rq of described substrate is 5nm ~ 1 μm.
The surface roughness Rq of described substrate is 8nm ~ 30nm.
Well-regulated second concaveconvex structure of surface forming of described planarization layer.
The refractive index of described planarization layer is 1.7 ~ 3.0.
The refractive index of described planarization layer is 1.8 ~ 2.0.
The cross section circular arc triangular in shape, upper of described second concaveconvex structure, lower circular arc, waveform or trapezoidal in the combination of one or more, the angle formed in described second concaveconvex structure be arc transition connect.
The height of projection of described second concaveconvex structure is 10nm ~ 100 μm.
The height of projection of described second concaveconvex structure is 100nm ~ 20 μm.
In described second concaveconvex structure, adjacent two depression spacing or adjacent two protruding spacing are 1 μm ~ 1000 μm.
In described second concaveconvex structure, adjacent two depression spacing or adjacent two protruding spacing are 1 μm ~ 100 μm.
The present invention has following beneficial effect relative to prior art:
The present invention utilizes the substrate of surface roughening to prepare OLED, improves the light extraction efficiency of OLED by eliminating waveguide mode; In addition, the present invention also arranges the planarization layer of one deck high index of refraction on roughening substrate, planarization layer is set to the concaveconvex structure of rule, the regular concavo-convex of negative electrode is caused by this concaveconvex structure, thus elimination surface plasmon polaritons, further limit the loss of light, improve the extraction efficiency of light.Through verification experimental verification: adopt concaveconvex structure in OLED after, its current efficiency and luminous efficiency, apparently higher than conventional OLED device structure, reach the light extraction efficiency of at least 1.6 times.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structure diagram of OLED provided by the present invention;
Fig. 2 is the johning knot composition detail view of substrate and planarization layer in Fig. 1.
In figure: 1-substrate, 11-first concaveconvex structure; 2-planarization layer, 21-second concaveconvex structure; 3-first electrode layer; 4-organic layer; 5-the second electrode lay.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
As depicted in figs. 1 and 2, the invention provides a kind of OLED efficiently, comprise substrate 1, planarization layer 2, first electrode layer 3, organic layer 4 and the second electrode lay 5 successively.Wherein substrate 1 is formed rough first concaveconvex structure 11, its surface roughness Rq is 5nm ~ 1um, and its preferred surface roughness Rq is 8nm-30nm.The substrate adopted in the present invention is be made by any one material in silicon dioxide, PETG, PEN, polyimides.Wherein the refractive index of planarization layer 2 is greater than or equal to the refraction of the first electrode layer 3
Rate, first electrode layer is electrically conducting transparent layer material, can be metal-oxide film (TCO), it makes a general reference oxide, nitride, fluoride, doping oxide or the mixed oxide with transparent conductivity, and wherein oxygen (nitrogen) compound is: In
2o
3, SnO
2, ZnO, CdO, TiN.Doping oxide is: In
2o
3: Sn (ITO), ZnO:In (IZO), ZnO:Ga (GZO), ZnO:Al (AZO), ZnO
2: F, TiO
2: Ta.Mixed oxide is: In
2o
3-ZnO, CdIn
2o
4, Cd
2sn
2o
4, Zn
2snO
4.；
The present invention utilizes the substrate 1 of surface roughening to prepare OLED, is improved the light extraction efficiency of OLED by the waveguide mode eliminated in light loss pattern, and its structure is simple, is easy to carry out.
In order to eliminate the surface plasmon modes in light loss pattern, planarization layer 2 surface is set to the second concaveconvex structure 21 of rule by the present invention, planarization layer 2 surface has higher refractive index simultaneously, its refractive index is 1.7 ~ 3.0, the preferred planarization layer refractive index of the present invention is 1.8 ~ 2.0, and the material of planarization layer 2 adopts ZrO
2, TiO
2, Ta
2o
5, Nb
2o
5with any one in fluorinated polyimide.
Substrate roughening in the present invention carries out acid system etching in the later stage to be formed, by the mixed liquid dipping substrate surface of watery hydrochloric acid or dilute sodium hydroxide or acid.Wherein acid system etching solution is: HCl:NaOH:H
2o=(10:1:10), soak time is 3min, can be realized the roughening of substrate surface by acid etching method.The mode can certainly polished by sand paper etc., makes substrate surface roughening.
The second concaveconvex structure 21 cross section wherein on planarization layer 2 is triangle, upper circular arc, lower circular arc, waveform or trapezoidal, the cross section of the band angle wherein formed in the second concaveconvex structure 21, is arc transition connects in its angle.The height of projection of the second concaveconvex structure 21 is between 10nm ~ 100 μm, and the preferred height of projection scope of the present invention is between 100nm ~ 20 μm.And adjacent two depression spacing or adjacent two protruding spacing are 1 μm ~ 1000 μm in the second concaveconvex structure 21, preferred distance of the present invention is 1 μm ~ 100 μm.
Below for OLED: ITO/NPB/TCTA/CBP:TBPe/CBP:Ir (ppy) 3/Bphen/liF/Al is described.
OLED structure is as follows, adopts ITO as device anode, and NPB is as hole injection layer, and TCTA, as hole transmission layer, adopts CBP:TBPe as blue-light-emitting main body; CBP:Ir (ppy) 3 is as green light emitting layer, and Bphen is as electron transfer layer, and LiF is as electron injecting layer, and Al is as metal electrode.
The present invention preferably adopts and arrange roughness Rq on substrate is 8nm ~ 30nm, height of projection 100nm ~ 20 μm of the second concaveconvex structure on planarization layer, and in the second concaveconvex structure 21, adjacent two depression spacing or adjacent two protruding spacing are 1 μm ~ 100 μm.Compared with adopting the OLED of said structure and adopting the conventional OLED device of said structure, shown in specifically seeing the following form.
Each embodiment and conventional device contrast effect as shown in the table:
Can be found out by two forms above, first three parameter in institute's given range to OLED
The impact of performance presents normal distribution; The increase gradually of planarization layer refractive index can make the light extraction efficiency of OLED in the trend increased.
When substrate roughness Rq is between 8nm-30nm, the performance comparison conventional OLED device performance boost of OLED is comparatively obvious.
When the height of projection of planarization layer is between 100nm-20um, the performance comparison conventional OLED device performance boost of OLED is comparatively obvious.
Depression spacing (or protruding spacing) in planarization layer between 1um-100um time, the performance comparison conventional OLED device performance boost of OLED is comparatively obvious.
By comparing with conventional OLED device, after OLED adopts concaveconvex structure, its current efficiency and luminous efficiency, apparently higher than conventional OLED device structure, reach the light extraction efficiency of at least 1.6 times.
Obviously, above-described embodiment is only for clearly example being described, and not to the restriction implemented.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (11)
1. an OLED, the planarization layer (2) comprising substrate (1), the first electrode layer (3) and be positioned between described substrate (1) and the first electrode layer (3), it is characterized in that, described substrate (1) surface forms the first concaveconvex structure (11), and the refractive index of described planarization layer (2) is more than or equal to the refractive index of described first electrode layer (3).
2. OLED according to claim 1, is characterized in that, the surface roughness Rq of described substrate (1) is 5nm ~ 1 μm.
3. OLED according to claim 2, is characterized in that, the surface roughness Rq of described substrate (1) is 8nm ~ 30nm.
4. OLED according to claim 1, is characterized in that, well-regulated second concaveconvex structure (21) of surface forming of described planarization layer (2).
5. OLED according to claim 1, is characterized in that, the refractive index of described planarization layer (2) is 1.7 ~ 3.0.
6. OLED according to claim 5, is characterized in that, the refractive index of described planarization layer (2) is 1.8 ~ 2.0.
7. according to the arbitrary described OLED of claim 4-6, it is characterized in that, the cross section circular arc triangular in shape, upper of described second concaveconvex structure (21), lower circular arc, waveform or trapezoidal in the combination of one or more, the angle formed in described second concaveconvex structure (21) be arc transition connect.
8. OLED according to claim 7, is characterized in that, the height of projection of described second concaveconvex structure (21) is 10nm ~ 100 μm.
9. OLED according to claim 8, is characterized in that, the height of projection of described second concaveconvex structure (21) is 100nm ~ 20 μm.
10. OLED according to claim 9, is characterized in that, in described second concaveconvex structure (21), adjacent two depression spacing or adjacent two protruding spacing are 1 μm ~ 1000 μm.
11. OLED according to claim 10, is characterized in that, in described second concaveconvex structure (21), adjacent two depression spacing or adjacent two protruding spacing are 1 μm ~ 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510732043.3A CN105304827A (en) | 2015-11-02 | 2015-11-02 | OLED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510732043.3A CN105304827A (en) | 2015-11-02 | 2015-11-02 | OLED device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105304827A true CN105304827A (en) | 2016-02-03 |
Family
ID=55201817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510732043.3A Pending CN105304827A (en) | 2015-11-02 | 2015-11-02 | OLED device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105304827A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106422085A (en) * | 2016-11-30 | 2017-02-22 | 广东凯西欧照明有限公司 | OLED phototherapy clothes |
| CN109494309A (en) * | 2017-09-13 | 2019-03-19 | 创王光电股份有限公司 | Display panel and manufacturing method thereof |
| CN109585663A (en) * | 2017-09-29 | 2019-04-05 | 上海和辉光电有限公司 | A kind of method and OLED device preparing OLED device |
| CN111384286A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN112799158A (en) * | 2021-01-27 | 2021-05-14 | 福州大学 | A resonator-like light extraction structure based on optical waveguide |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106422085A (en) * | 2016-11-30 | 2017-02-22 | 广东凯西欧照明有限公司 | OLED phototherapy clothes |
| CN109494309A (en) * | 2017-09-13 | 2019-03-19 | 创王光电股份有限公司 | Display panel and manufacturing method thereof |
| CN109585663A (en) * | 2017-09-29 | 2019-04-05 | 上海和辉光电有限公司 | A kind of method and OLED device preparing OLED device |
| CN111384286A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN111384286B (en) * | 2018-12-29 | 2021-07-06 | Tcl科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN112799158A (en) * | 2021-01-27 | 2021-05-14 | 福州大学 | A resonator-like light extraction structure based on optical waveguide |
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Application publication date: 20160203 |