CN102087483B - Optical system for focal plane detection in projection lithography - Google Patents
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- 238000001514 detection method Methods 0.000 title claims abstract description 84
- 238000001459 lithography Methods 0.000 title claims abstract description 35
- 230000003287 optical effect Effects 0.000 title claims abstract description 35
- 238000003384 imaging method Methods 0.000 claims abstract description 25
- 238000005286 illumination Methods 0.000 claims abstract description 24
- 230000003321 amplification Effects 0.000 claims abstract description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000011896 sensitive detection Methods 0.000 claims 6
- 238000001259 photo etching Methods 0.000 claims 2
- 241000239290 Araneae Species 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000007689 inspection Methods 0.000 abstract description 14
- 239000000523 sample Substances 0.000 abstract description 11
- 238000012545 processing Methods 0.000 description 16
- 238000005259 measurement Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
本发明是一种用于投影光刻中焦面检测的光学系统,检焦标记和投影成像系统位于照明系统和多次反射棱镜之间,被检测面位于多次反射棱镜和反射镜之间,检焦标记放大系统位于反射镜和探测器件之间;投影成像系统与照明系统匹配为照明检焦标记提供照明光,多次反射棱镜将照明系统的照明检焦标记的入射光分为两束或两束以上的探测光,并且每束探测光的位置不相同,检焦标记通过投影成像系统和多次反射棱镜将每束探测光位置的标记成像到被检测面表面上,经过被检测面反射后的检测光,经检焦标记放大系统放大后入射到探测器件上,利用探测器件探测经光学放大系统放大后的反射图像位置,对光刻投影物镜的焦面位置和焦面倾斜进行检测。
The invention is an optical system for focal plane detection in projection lithography. The focus detection mark and projection imaging system are located between the illumination system and the multiple reflection prism, and the detected surface is located between the multiple reflection prism and the reflection mirror. The focus inspection mark magnification system is located between the reflector and the detection device; the projection imaging system is matched with the illumination system to provide illumination light for the illumination focus inspection mark, and the multiple reflection prism divides the incident light of the illumination focus inspection mark of the illumination system into two beams or There are more than two beams of probe light, and the position of each beam of probe light is different. The focus inspection mark will image the mark of each beam of probe light position on the surface of the detected surface through the projection imaging system and multiple reflection prisms, and then reflect it from the detected surface The final detection light is amplified by the focus detection mark amplification system and then incident on the detection device. The detection device is used to detect the reflected image position amplified by the optical amplification system to detect the focal plane position and focal plane tilt of the lithography projection objective lens.
Description
技术领域 technical field
本发明涉及一种自动焦面检测系统,是一种通过光学三角测量方法对成像面的位置移动进行测量的技术。The invention relates to an automatic focal plane detection system, which is a technique for measuring the position movement of an imaging plane through an optical triangulation method.
背景技术 Background technique
光刻装置(光刻机)是大规模集成电路生产的重要设备之一。投影光刻机可将掩模板上的图形通过成像曝光装置按一定比例成像到要加工的对象上(如硅片等),硅片在这里泛指所有被曝光对象,包括衬底、镀膜和光刻胶等。在曝光过程中,需要使加工对象(如硅片等)的相应表面保持在曝光装置的焦深范围之内。为此,投影光刻机采用了用于测量加工对象(如硅片等)的表面位置信息的调焦调平测量系统(焦面检测系统)。调焦调平测量系统可以和夹持加工对象(如硅片等)的加工台一起使加工对象(如硅片等)的被曝光区域一直处于投影光刻机曝光装置的焦深之内,从而使掩模板上的图形理想地转移到加工对象(如硅片等)上。Photolithography device (lithography machine) is one of the important equipment for the production of large-scale integrated circuits. The projection lithography machine can image the pattern on the mask plate to the object to be processed (such as a silicon wafer, etc.) in a certain proportion through the imaging exposure device. The silicon wafer here refers to all exposed objects, including substrates, coatings and light Engraving etc. During the exposure process, it is necessary to keep the corresponding surface of the processing object (such as a silicon wafer) within the focal depth range of the exposure device. For this reason, the projection lithography machine adopts a focusing and leveling measurement system (focal plane detection system) for measuring surface position information of a processing object (such as a silicon wafer, etc.). The focusing and leveling measurement system can work with the processing table that clamps the processing object (such as silicon wafer, etc.) to keep the exposed area of the processing object (such as silicon wafer, etc.) within the focal depth of the exposure device of the projection lithography machine, so that Ideally transfer the graphics on the mask to the processing object (such as silicon wafer, etc.).
随着投影光刻机分辨率的图段提高和投影物镜焦深的不断减小,对光刻机的调焦调平测量分系统的测量精度和能够实时测量曝光区域等性能的要求也越来越高。因此目前步进扫描投影光刻机中所采用的调焦调平测量系统通常为光电测量系统,如:基于光栅和四象限探测器的光电测量方法(美国专利US5191200)、基于狭缝和四象限探测器的光电测量方法(美国专利US6765647B1)、基于PSD(位置敏感器件)的光电探测方法(中国专利:200610117401)和基于光栅莫尔条纹的光电探测方法(中国专利:200710171968)。上述调焦调平测量系统的测量位置均为单一位置,即只能测试加工对象上某一点或某一微小区域内平均的位置信息。为实现投影光刻机所需的调焦和调平测量两大功能,需要采用若干套焦面检测系统(如:Overlay and field leveling in wafersteppers using an advanced metrology system,SPIE Vol.1673)或在一个系统中采用若干个标记(如美国专利:US5191200),这样使得整个调焦调平测量系统非常冗余。With the improvement of the resolution of the projection lithography machine and the continuous reduction of the depth of focus of the projection objective lens, the requirements for the measurement accuracy of the focusing, leveling and measurement subsystem of the lithography machine and the ability to measure the exposure area in real time are also increasing. higher. Therefore, the focusing and leveling measurement systems currently used in step-and-scan projection lithography machines are usually photoelectric measurement systems, such as: photoelectric measurement methods based on gratings and four-quadrant detectors (US Patent US5191200), based on slits and four-quadrants Photoelectric measurement method of detector (US patent US6765647B1), photoelectric detection method based on PSD (position sensitive device) (Chinese patent: 200610117401) and photoelectric detection method based on grating Moire fringe (Chinese patent: 200710171968). The measurement position of the above-mentioned focusing and leveling measurement system is a single position, that is, it can only test the average position information of a certain point or a small area on the processing object. In order to realize the two functions of focusing and leveling measurement required by the projection lithography machine, it is necessary to use several sets of focal plane detection systems (such as: Overlay and field leveling in wafersteppers using an advanced metrology system, SPIE Vol.1673) or in a Several marks are adopted in the system (such as US Patent: US5191200), which makes the entire focusing and leveling measurement system very redundant.
发明内容 Contents of the invention
为解决上述一套光学系统仅能进行对某一点或某一微小区域进行焦面检测,要实现投影光刻机所需的调焦调平两大功能需要采用若干套焦面检测系统,因而整个调焦调平测量系统非常冗余的问题,本发明的目的是利用一套光学系统完成投影光刻中的焦面位置和倾斜检测,实现调焦、调平测量的功能。In order to solve the problem that the above-mentioned set of optical systems can only perform focal plane detection on a certain point or a small area, several sets of focal plane detection systems are required to realize the two functions of focusing and leveling required by projection lithography machines, so the entire Focusing and leveling measurement system is very redundant. The purpose of the present invention is to use a set of optical system to complete the focal plane position and tilt detection in projection lithography, and realize the functions of focusing and leveling measurement.
为实现本发明的目的,本发明提供用于投影光刻中焦面检测的光学系统,所述光学系统解决技术问题所采用的技术方案包括:照明系统、检焦标记、投影成像系统、多次反射棱镜、被检测面、反射镜、检焦标记放大系统和探测器件;检焦标记和投影成像系统位于照明系统和多次反射棱镜之间,被检测面位于多次反射棱镜和反射镜之间,检焦标记放大系统位于反射镜和探测器件之间;投影成像系统与照明系统匹配为照明检焦标记提供照明光,多次反射棱镜将照明系统的照明检焦标记的入射光分为两束或两束以上的探测光,并且每束探测光的位置不相同,检焦标记通过投影成像系统和多次反射棱镜将每束探测光位置的标记成像到被检测面表面上,经过被检测面反射后的检测光,经检焦标记放大系统放大后入射到探测器件上,利用探测器件探测经光学放大系统放大后的反射图像位置,对光刻投影物镜的焦面位置和焦面倾斜进行检测。In order to achieve the purpose of the present invention, the present invention provides an optical system for focal plane detection in projection lithography. The technical solutions adopted by the optical system to solve technical problems include: illumination system, focus detection mark, projection imaging system, multiple Reflecting prism, detected surface, reflecting mirror, focusing mark magnification system and detection device; focusing marking and projection imaging system are located between the illumination system and the multiple reflecting prism, and the detected surface is located between the multiple reflecting prism and the reflecting mirror , the focus inspection mark magnification system is located between the reflector and the detection device; the projection imaging system is matched with the illumination system to provide illumination light for the illumination inspection mark, and the multiple reflection prism divides the incident light of the illumination inspection mark of the illumination system into two beams Or more than two beams of probe light, and the position of each beam of probe light is different, the focus inspection mark will image the mark of the position of each beam of probe light onto the surface of the detected surface through the projection imaging system and multiple reflection prisms, and pass through the detected surface The reflected detection light is amplified by the focus detection mark amplification system and then incident on the detection device, and the detection device is used to detect the position of the reflected image amplified by the optical amplification system, and detect the focal plane position and focal plane tilt of the lithography projection objective lens .
利用所述的用于投影光刻中焦面检测的光学系统,还可以应用到需要检测成像物镜实际成像面与理想焦面位置差的其他场合、用于成像物镜焦面检测及还可以应用到需要精密位置检测的场合。The optical system for focal plane detection in projection lithography can also be applied to other occasions where it is necessary to detect the position difference between the actual imaging surface of the imaging objective lens and the ideal focal plane, for the detection of the focal plane of the imaging objective lens and can also be applied to Where precise position detection is required.
本发明的有益效果:在本发明中,通过引入多次反射棱镜,仅采用一套光学系统,同时实现了焦面位置探测和焦面倾斜探测,不仅降低了系统复杂程度,还减少了误差源,提高了探测精度。本发明通过多个点的位置探测,就可以实现被探测面的倾斜探测。由于所有的探测光都是由同一光源和同一检测标记发出,因此各个探测光严格一致,并且这些探测光均通过同一光学系统,因此可以消除掉光学系统加工、装调等因素产生的差异;综合以上优点,这样的结构安排可以增加调平调焦探测的精度。Beneficial effects of the present invention: In the present invention, by introducing multiple reflection prisms, only one set of optical system is used, and the focal plane position detection and focal plane tilt detection are realized at the same time, which not only reduces the complexity of the system, but also reduces the source of errors , which improves the detection accuracy. The present invention can realize the inclination detection of the detected surface through the position detection of multiple points. Since all the detection lights are emitted by the same light source and the same detection mark, each detection light is strictly consistent, and these detection lights pass through the same optical system, so the differences caused by factors such as optical system processing and assembly can be eliminated; comprehensive With the above advantages, such a structural arrangement can increase the accuracy of leveling and focusing detection.
附图说明 Description of drawings
图1为投影光刻机原理图。Figure 1 is a schematic diagram of a projection lithography machine.
图2是图1中的焦面检测光学系统本发明投影光刻机中焦面检测的光学系统的原理图。FIG. 2 is a schematic diagram of the optical system for focal plane detection in the projection lithography machine of the present invention of the focal plane detection optical system in FIG. 1 .
图3为多次反射原理图。Figure 3 is a schematic diagram of multiple reflections.
图4为检测光路的在被检测面的反射光路示意图。FIG. 4 is a schematic diagram of the reflected light path of the detection light path on the surface to be detected.
具体实施方式 Detailed ways
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
图1示出了投影光刻机的原理图,投影光刻机含有光轴1a、掩膜板2a、光刻投影物镜3a、由多个焦面检测光学系统组成的调平调焦检测系统4a、加工对象5a和载物平台6a。掩膜板2a置于光刻投影物镜3a的物面,加工对象5a(如硅片等)置于载物平台6a上。光刻曝光时,需移动载物平台6a使得加工对象5a的曝光面处于光刻投影物镜3a的焦面上。为使得掩模板2a上的图像精确的转移至加工对象5a上,需要对加工对象5a的曝光面与光刻投影物镜3a的相对位置(包括距离和倾斜)进行精确的探测和调整,使得加工对象5a的整个待曝光区域都处于光刻投影物镜3a的焦深范围内。为达到这一目的,就需要由多个焦面检测光学系统组成的调平调焦检测系统4a对加工对象5a上的待曝光区域的位置进行精密检测,并给予载物平台6a的调焦调平执行系统反馈。Figure 1 shows a schematic diagram of a projection lithography machine, which includes an optical axis 1a, a mask plate 2a, a lithography projection objective lens 3a, and a leveling and focusing detection system 4a composed of multiple focal plane detection optical systems , Processing object 5a and
图2示出的是对图1中焦面检测光学系统的改进,本发明提供的投影光刻机中焦面检测的光学系统是利用三角测量方法,本发明光学系统包括:照明系统1、检焦标记2、投影成像系统3、多次反射棱镜4、被检测面5、反射镜6、检焦标记放大系统7和探测器件8组成,检焦标记2和投影成像系统3位于照明系统1和多次反射棱镜4之间,被检测面5位于多次反射棱镜4和反射镜6之间,检焦标记放大系统7位于反射镜6和探测器件8之间;投影成像系统3与照明系统1匹配为照明检焦标记2提供照明光,多次反射棱镜4将照明系统1的照明检焦标记2的入射光分为两束或两束以上的探测光,并且每束探测光的位置不相同,检焦标记2通过投影成像系统3和多次反射棱镜4将每束探测光位置的标记成像到被检测面5表面上,经过被检测面5反射后的检测光,经检焦标记放大系统7放大后入射到探测器件8上,利用探测器件8探测经光学放大系统7放大后的反射图像位置,对光刻投影物镜3a的焦面位置和焦面倾斜进行检测。What Fig. 2 shows is the improvement to the optical system of focal plane detection in Fig. 1, the optical system of focal plane detection in the projection lithography machine provided by the present invention is to utilize triangulation method, the optical system of the present invention comprises:
照明系统1将光源发出的光整形后照亮检焦标记2;检焦标记2经投影成像系统3和多次反射棱镜4后成像在被检测面5上;多次反射棱镜4的上表面具有分光特性,而多次反射棱镜4的下表面具有反射特性,因此入射光经过多次反射棱镜4反射后,将形成个反射光线,即将检焦标记2形成多个具有复制特性的像,这些像不受检焦标记制作工艺影响其形状和位置关系是严格一致的;检焦标记2的像经过被检测面5及反射镜6的反射后由检焦标记放大系统7放大成像到探测器件8上,探测器件8得到的光信号将转换为电信号,由相应的电路系统将检测信号读出。通过工艺实验得到光刻投影物镜3a的理想成像焦面位置并对焦面检测系统进行标定,该焦面检测系统在标定以后可以实时测得光刻投影物镜3a实际成像面与理想焦面的位置差。The
所述的照明系统1采用宽带或单色光源,包括卤素灯、氙灯、LED或激光器等工程技术中常用的光源;The
所述的检焦标记2,是具有明暗形式的便于探测器件探测到标记,其中明暗形式的标记是:十字叉、直线、光栅、圆点和圆圈的一种。The focus inspection mark 2 is a light and dark mark that is easy to be detected by the detection device, wherein the light and dark mark is one of crosses, straight lines, gratings, dots and circles.
所述的多次反射棱镜4的外反射介质表面为分光面,根据实际需利用反射介质表面的部分反射或者通过镀膜等方法使其达到一定的分光比,多次反射棱镜4将入射的探测光分为两束探测光或两束以上的探测光。所述多次反射棱镜4的外反射表面的分光性质可以是分色分光、也可以是中性分光。所述多次反射棱镜4经外表面反射的主光线与经内表面反射再经外表面折射的主光线可以是平行的光线,也可以是成一角度的光线。The surface of the external reflection medium of the
所述被检测面5是位于光刻投影物镜1a像面的具有镜面反射、漫反射或散射性质的平面、曲面。The detected
所述探测器件8是不局限于CCD面阵探测器8,还可以是CMOS器件、两象限探测器、四象限探测器、位置探测器(PSD)及对光信号敏感的光电探测类器件中的一种。The detection device 8 is not limited to the CCD area detector 8, and can also be a CMOS device, a two-quadrant detector, a four-quadrant detector, a position detector (PSD) and a photoelectric detection device sensitive to optical signals. A sort of.
如图3所示,当光入射到多次反射棱镜4以后,部分光通过多次反射棱镜4的前表面反射,部分光透过多次反射棱镜4的前表面并由多次反射棱镜4的后表面反射再经前表面出射。若合理设计多次反射棱镜4前后表面的透过率和反射率,则可以使入射光分为两束或两束以上的光。这些光线均由同一光源和同一检焦标记2发出,具有严格的复制特征。As shown in Figure 3, after the light is incident on the
如图4所示,由检焦标记2通过检焦标记投影成像系统3投影出的探测光分为两束或两束以上后,分别入射到被检测面5上。这些探测光沿水平方向有X的偏移,也就是说被探测位置也有X的偏移,通过多个点的位置探测,就可以实现被检测面的倾斜探测。由于所有的探测光都是由同一光源和同一检焦标记2发出,因此各个探测光严格一致;并且这些探测光均通过同一光学系统,因此可以消除掉光学系统加工、装调等因素产生的差异;综合以上优点,这样的结构安排可以增加调平调焦探测的精度。As shown in FIG. 4 , the detection light projected by the focus inspection mark 2 through the focus inspection mark
上述附图和具体实施方式仅为本发明的一实施例,在不背离本发明的发明精神和权利要求书所界定的发明范围前提下,本发明可以有各种增补、修改和替代。因此,上述实施例是用于说明例证本发明而非限制本发明的范围,本发明的范围有权利要求及其合法同等物来界定,而不限于此前之描述。权利要求书旨在涵盖所有此类同等物。The above drawings and specific implementation are only an embodiment of the present invention. On the premise of not departing from the spirit of the present invention and the scope of the invention defined by the claims, the present invention can have various additions, modifications and substitutions. Therefore, the above-mentioned embodiments are used to illustrate and illustrate the present invention rather than to limit the scope of the present invention, which is defined by the claims and their legal equivalents, and not limited by the foregoing description. The claims are intended to cover all such equivalents.
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| CN102243138A (en) * | 2011-08-05 | 2011-11-16 | 中国科学院光电技术研究所 | A focal plane detection device used in projection lithography |
| CN103744269B (en) * | 2014-01-03 | 2015-07-29 | 中国科学院上海光学精密机械研究所 | The detection method of wave aberration of photoetching projection objective and imaging optimal focal plane |
| CN105807570B (en) * | 2014-12-31 | 2018-03-02 | 上海微电子装备(集团)股份有限公司 | The focusing leveling device and its method of adaptive groove |
| CN105807579B (en) * | 2014-12-31 | 2018-10-16 | 上海微电子装备(集团)股份有限公司 | A kind of silicon chip and substrate prealignment measuring device and method |
| CN107450287B (en) | 2016-05-31 | 2019-10-25 | 上海微电子装备(集团)股份有限公司 | Focusing and leveling measurement apparatus and method |
| JP7137363B2 (en) * | 2018-06-11 | 2022-09-14 | キヤノン株式会社 | Exposure method, exposure apparatus, article manufacturing method and measurement method |
| CN109443210B (en) * | 2018-12-13 | 2024-10-18 | 赫智科技(苏州)有限公司 | Optical position detection device and method |
| CN112846485B (en) * | 2020-12-31 | 2022-11-04 | 武汉华工激光工程有限责任公司 | Laser processing monitoring method and device and laser processing equipment |
| CN115903408B (en) * | 2021-09-30 | 2026-04-07 | 上海微电子装备(集团)股份有限公司 | Focusing measurement system and photolithography equipment |
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