CN102087483B - Optical system for focal plane detection in projection lithography - Google Patents

Optical system for focal plane detection in projection lithography Download PDF

Info

Publication number
CN102087483B
CN102087483B CN 201010605515 CN201010605515A CN102087483B CN 102087483 B CN102087483 B CN 102087483B CN 201010605515 CN201010605515 CN 201010605515 CN 201010605515 A CN201010605515 A CN 201010605515A CN 102087483 B CN102087483 B CN 102087483B
Authority
CN
China
Prior art keywords
focal plane
light
projection
mark
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201010605515
Other languages
Chinese (zh)
Other versions
CN102087483A (en
Inventor
陈铭勇
胡松
李艳丽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Optics and Electronics of CAS
Original Assignee
Institute of Optics and Electronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Optics and Electronics of CAS filed Critical Institute of Optics and Electronics of CAS
Priority to CN 201010605515 priority Critical patent/CN102087483B/en
Publication of CN102087483A publication Critical patent/CN102087483A/en
Application granted granted Critical
Publication of CN102087483B publication Critical patent/CN102087483B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本发明是一种用于投影光刻中焦面检测的光学系统,检焦标记和投影成像系统位于照明系统和多次反射棱镜之间,被检测面位于多次反射棱镜和反射镜之间,检焦标记放大系统位于反射镜和探测器件之间;投影成像系统与照明系统匹配为照明检焦标记提供照明光,多次反射棱镜将照明系统的照明检焦标记的入射光分为两束或两束以上的探测光,并且每束探测光的位置不相同,检焦标记通过投影成像系统和多次反射棱镜将每束探测光位置的标记成像到被检测面表面上,经过被检测面反射后的检测光,经检焦标记放大系统放大后入射到探测器件上,利用探测器件探测经光学放大系统放大后的反射图像位置,对光刻投影物镜的焦面位置和焦面倾斜进行检测。

Figure 201010605515

The invention is an optical system for focal plane detection in projection lithography. The focus detection mark and projection imaging system are located between the illumination system and the multiple reflection prism, and the detected surface is located between the multiple reflection prism and the reflection mirror. The focus inspection mark magnification system is located between the reflector and the detection device; the projection imaging system is matched with the illumination system to provide illumination light for the illumination focus inspection mark, and the multiple reflection prism divides the incident light of the illumination focus inspection mark of the illumination system into two beams or There are more than two beams of probe light, and the position of each beam of probe light is different. The focus inspection mark will image the mark of each beam of probe light position on the surface of the detected surface through the projection imaging system and multiple reflection prisms, and then reflect it from the detected surface The final detection light is amplified by the focus detection mark amplification system and then incident on the detection device. The detection device is used to detect the reflected image position amplified by the optical amplification system to detect the focal plane position and focal plane tilt of the lithography projection objective lens.

Figure 201010605515

Description

一种用于投影光刻中焦面检测的光学系统An optical system for focal plane detection in projection lithography

技术领域 technical field

本发明涉及一种自动焦面检测系统,是一种通过光学三角测量方法对成像面的位置移动进行测量的技术。The invention relates to an automatic focal plane detection system, which is a technique for measuring the position movement of an imaging plane through an optical triangulation method.

背景技术 Background technique

光刻装置(光刻机)是大规模集成电路生产的重要设备之一。投影光刻机可将掩模板上的图形通过成像曝光装置按一定比例成像到要加工的对象上(如硅片等),硅片在这里泛指所有被曝光对象,包括衬底、镀膜和光刻胶等。在曝光过程中,需要使加工对象(如硅片等)的相应表面保持在曝光装置的焦深范围之内。为此,投影光刻机采用了用于测量加工对象(如硅片等)的表面位置信息的调焦调平测量系统(焦面检测系统)。调焦调平测量系统可以和夹持加工对象(如硅片等)的加工台一起使加工对象(如硅片等)的被曝光区域一直处于投影光刻机曝光装置的焦深之内,从而使掩模板上的图形理想地转移到加工对象(如硅片等)上。Photolithography device (lithography machine) is one of the important equipment for the production of large-scale integrated circuits. The projection lithography machine can image the pattern on the mask plate to the object to be processed (such as a silicon wafer, etc.) in a certain proportion through the imaging exposure device. The silicon wafer here refers to all exposed objects, including substrates, coatings and light Engraving etc. During the exposure process, it is necessary to keep the corresponding surface of the processing object (such as a silicon wafer) within the focal depth range of the exposure device. For this reason, the projection lithography machine adopts a focusing and leveling measurement system (focal plane detection system) for measuring surface position information of a processing object (such as a silicon wafer, etc.). The focusing and leveling measurement system can work with the processing table that clamps the processing object (such as silicon wafer, etc.) to keep the exposed area of the processing object (such as silicon wafer, etc.) within the focal depth of the exposure device of the projection lithography machine, so that Ideally transfer the graphics on the mask to the processing object (such as silicon wafer, etc.).

随着投影光刻机分辨率的图段提高和投影物镜焦深的不断减小,对光刻机的调焦调平测量分系统的测量精度和能够实时测量曝光区域等性能的要求也越来越高。因此目前步进扫描投影光刻机中所采用的调焦调平测量系统通常为光电测量系统,如:基于光栅和四象限探测器的光电测量方法(美国专利US5191200)、基于狭缝和四象限探测器的光电测量方法(美国专利US6765647B1)、基于PSD(位置敏感器件)的光电探测方法(中国专利:200610117401)和基于光栅莫尔条纹的光电探测方法(中国专利:200710171968)。上述调焦调平测量系统的测量位置均为单一位置,即只能测试加工对象上某一点或某一微小区域内平均的位置信息。为实现投影光刻机所需的调焦和调平测量两大功能,需要采用若干套焦面检测系统(如:Overlay and field leveling in wafersteppers using an advanced metrology system,SPIE Vol.1673)或在一个系统中采用若干个标记(如美国专利:US5191200),这样使得整个调焦调平测量系统非常冗余。With the improvement of the resolution of the projection lithography machine and the continuous reduction of the depth of focus of the projection objective lens, the requirements for the measurement accuracy of the focusing, leveling and measurement subsystem of the lithography machine and the ability to measure the exposure area in real time are also increasing. higher. Therefore, the focusing and leveling measurement systems currently used in step-and-scan projection lithography machines are usually photoelectric measurement systems, such as: photoelectric measurement methods based on gratings and four-quadrant detectors (US Patent US5191200), based on slits and four-quadrants Photoelectric measurement method of detector (US patent US6765647B1), photoelectric detection method based on PSD (position sensitive device) (Chinese patent: 200610117401) and photoelectric detection method based on grating Moire fringe (Chinese patent: 200710171968). The measurement position of the above-mentioned focusing and leveling measurement system is a single position, that is, it can only test the average position information of a certain point or a small area on the processing object. In order to realize the two functions of focusing and leveling measurement required by the projection lithography machine, it is necessary to use several sets of focal plane detection systems (such as: Overlay and field leveling in wafersteppers using an advanced metrology system, SPIE Vol.1673) or in a Several marks are adopted in the system (such as US Patent: US5191200), which makes the entire focusing and leveling measurement system very redundant.

发明内容 Contents of the invention

为解决上述一套光学系统仅能进行对某一点或某一微小区域进行焦面检测,要实现投影光刻机所需的调焦调平两大功能需要采用若干套焦面检测系统,因而整个调焦调平测量系统非常冗余的问题,本发明的目的是利用一套光学系统完成投影光刻中的焦面位置和倾斜检测,实现调焦、调平测量的功能。In order to solve the problem that the above-mentioned set of optical systems can only perform focal plane detection on a certain point or a small area, several sets of focal plane detection systems are required to realize the two functions of focusing and leveling required by projection lithography machines, so the entire Focusing and leveling measurement system is very redundant. The purpose of the present invention is to use a set of optical system to complete the focal plane position and tilt detection in projection lithography, and realize the functions of focusing and leveling measurement.

为实现本发明的目的,本发明提供用于投影光刻中焦面检测的光学系统,所述光学系统解决技术问题所采用的技术方案包括:照明系统、检焦标记、投影成像系统、多次反射棱镜、被检测面、反射镜、检焦标记放大系统和探测器件;检焦标记和投影成像系统位于照明系统和多次反射棱镜之间,被检测面位于多次反射棱镜和反射镜之间,检焦标记放大系统位于反射镜和探测器件之间;投影成像系统与照明系统匹配为照明检焦标记提供照明光,多次反射棱镜将照明系统的照明检焦标记的入射光分为两束或两束以上的探测光,并且每束探测光的位置不相同,检焦标记通过投影成像系统和多次反射棱镜将每束探测光位置的标记成像到被检测面表面上,经过被检测面反射后的检测光,经检焦标记放大系统放大后入射到探测器件上,利用探测器件探测经光学放大系统放大后的反射图像位置,对光刻投影物镜的焦面位置和焦面倾斜进行检测。In order to achieve the purpose of the present invention, the present invention provides an optical system for focal plane detection in projection lithography. The technical solutions adopted by the optical system to solve technical problems include: illumination system, focus detection mark, projection imaging system, multiple Reflecting prism, detected surface, reflecting mirror, focusing mark magnification system and detection device; focusing marking and projection imaging system are located between the illumination system and the multiple reflecting prism, and the detected surface is located between the multiple reflecting prism and the reflecting mirror , the focus inspection mark magnification system is located between the reflector and the detection device; the projection imaging system is matched with the illumination system to provide illumination light for the illumination inspection mark, and the multiple reflection prism divides the incident light of the illumination inspection mark of the illumination system into two beams Or more than two beams of probe light, and the position of each beam of probe light is different, the focus inspection mark will image the mark of the position of each beam of probe light onto the surface of the detected surface through the projection imaging system and multiple reflection prisms, and pass through the detected surface The reflected detection light is amplified by the focus detection mark amplification system and then incident on the detection device, and the detection device is used to detect the position of the reflected image amplified by the optical amplification system, and detect the focal plane position and focal plane tilt of the lithography projection objective lens .

利用所述的用于投影光刻中焦面检测的光学系统,还可以应用到需要检测成像物镜实际成像面与理想焦面位置差的其他场合、用于成像物镜焦面检测及还可以应用到需要精密位置检测的场合。The optical system for focal plane detection in projection lithography can also be applied to other occasions where it is necessary to detect the position difference between the actual imaging surface of the imaging objective lens and the ideal focal plane, for the detection of the focal plane of the imaging objective lens and can also be applied to Where precise position detection is required.

本发明的有益效果:在本发明中,通过引入多次反射棱镜,仅采用一套光学系统,同时实现了焦面位置探测和焦面倾斜探测,不仅降低了系统复杂程度,还减少了误差源,提高了探测精度。本发明通过多个点的位置探测,就可以实现被探测面的倾斜探测。由于所有的探测光都是由同一光源和同一检测标记发出,因此各个探测光严格一致,并且这些探测光均通过同一光学系统,因此可以消除掉光学系统加工、装调等因素产生的差异;综合以上优点,这样的结构安排可以增加调平调焦探测的精度。Beneficial effects of the present invention: In the present invention, by introducing multiple reflection prisms, only one set of optical system is used, and the focal plane position detection and focal plane tilt detection are realized at the same time, which not only reduces the complexity of the system, but also reduces the source of errors , which improves the detection accuracy. The present invention can realize the inclination detection of the detected surface through the position detection of multiple points. Since all the detection lights are emitted by the same light source and the same detection mark, each detection light is strictly consistent, and these detection lights pass through the same optical system, so the differences caused by factors such as optical system processing and assembly can be eliminated; comprehensive With the above advantages, such a structural arrangement can increase the accuracy of leveling and focusing detection.

附图说明 Description of drawings

图1为投影光刻机原理图。Figure 1 is a schematic diagram of a projection lithography machine.

图2是图1中的焦面检测光学系统本发明投影光刻机中焦面检测的光学系统的原理图。FIG. 2 is a schematic diagram of the optical system for focal plane detection in the projection lithography machine of the present invention of the focal plane detection optical system in FIG. 1 .

图3为多次反射原理图。Figure 3 is a schematic diagram of multiple reflections.

图4为检测光路的在被检测面的反射光路示意图。FIG. 4 is a schematic diagram of the reflected light path of the detection light path on the surface to be detected.

具体实施方式 Detailed ways

为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

图1示出了投影光刻机的原理图,投影光刻机含有光轴1a、掩膜板2a、光刻投影物镜3a、由多个焦面检测光学系统组成的调平调焦检测系统4a、加工对象5a和载物平台6a。掩膜板2a置于光刻投影物镜3a的物面,加工对象5a(如硅片等)置于载物平台6a上。光刻曝光时,需移动载物平台6a使得加工对象5a的曝光面处于光刻投影物镜3a的焦面上。为使得掩模板2a上的图像精确的转移至加工对象5a上,需要对加工对象5a的曝光面与光刻投影物镜3a的相对位置(包括距离和倾斜)进行精确的探测和调整,使得加工对象5a的整个待曝光区域都处于光刻投影物镜3a的焦深范围内。为达到这一目的,就需要由多个焦面检测光学系统组成的调平调焦检测系统4a对加工对象5a上的待曝光区域的位置进行精密检测,并给予载物平台6a的调焦调平执行系统反馈。Figure 1 shows a schematic diagram of a projection lithography machine, which includes an optical axis 1a, a mask plate 2a, a lithography projection objective lens 3a, and a leveling and focusing detection system 4a composed of multiple focal plane detection optical systems , Processing object 5a and loading platform 6a. The mask plate 2a is placed on the object plane of the lithography projection objective lens 3a, and the processing object 5a (such as silicon wafer, etc.) is placed on the object loading platform 6a. During lithography exposure, the object loading platform 6a needs to be moved so that the exposure surface of the processing object 5a is on the focal plane of the lithography projection objective lens 3a. In order to accurately transfer the image on the mask plate 2a to the processing object 5a, it is necessary to accurately detect and adjust the relative position (including distance and inclination) of the exposure surface of the processing object 5a and the lithography projection objective lens 3a, so that the processing object The entire area to be exposed of 5a is within the focal depth range of the lithographic projection objective 3a. In order to achieve this goal, the leveling and focusing detection system 4a composed of multiple focal plane detection optical systems is required to precisely detect the position of the area to be exposed on the processing object 5a, and to give the focusing and adjustment of the loading platform 6a. Ping execution system feedback.

图2示出的是对图1中焦面检测光学系统的改进,本发明提供的投影光刻机中焦面检测的光学系统是利用三角测量方法,本发明光学系统包括:照明系统1、检焦标记2、投影成像系统3、多次反射棱镜4、被检测面5、反射镜6、检焦标记放大系统7和探测器件8组成,检焦标记2和投影成像系统3位于照明系统1和多次反射棱镜4之间,被检测面5位于多次反射棱镜4和反射镜6之间,检焦标记放大系统7位于反射镜6和探测器件8之间;投影成像系统3与照明系统1匹配为照明检焦标记2提供照明光,多次反射棱镜4将照明系统1的照明检焦标记2的入射光分为两束或两束以上的探测光,并且每束探测光的位置不相同,检焦标记2通过投影成像系统3和多次反射棱镜4将每束探测光位置的标记成像到被检测面5表面上,经过被检测面5反射后的检测光,经检焦标记放大系统7放大后入射到探测器件8上,利用探测器件8探测经光学放大系统7放大后的反射图像位置,对光刻投影物镜3a的焦面位置和焦面倾斜进行检测。What Fig. 2 shows is the improvement to the optical system of focal plane detection in Fig. 1, the optical system of focal plane detection in the projection lithography machine provided by the present invention is to utilize triangulation method, the optical system of the present invention comprises: illumination system 1, detection The focus mark 2, the projection imaging system 3, the multiple reflection prism 4, the detected surface 5, the mirror 6, the focus mark magnification system 7 and the detection device 8, the focus mark 2 and the projection imaging system 3 are located in the illumination system 1 and Between the multiple reflection prisms 4, the detected surface 5 is located between the multiple reflection prisms 4 and the reflector 6, and the focus detection mark amplification system 7 is located between the reflector 6 and the detection device 8; the projection imaging system 3 and the illumination system 1 Matching provides illumination light for the illumination focus inspection mark 2, and the multiple reflection prism 4 divides the incident light of the illumination focus inspection mark 2 of the illumination system 1 into two beams or more than two beams of detection light, and the position of each beam of detection light is different , the focus detection mark 2 images the mark of the position of each beam of detection light onto the surface of the detected surface 5 through the projection imaging system 3 and the multiple reflection prism 4, and the detection light reflected by the detection surface 5 passes through the focus detection mark amplification system 7 is amplified and incident on the detection device 8, and the detection device 8 is used to detect the position of the reflected image amplified by the optical amplification system 7, and detect the focal plane position and focal plane tilt of the lithography projection objective lens 3a.

照明系统1将光源发出的光整形后照亮检焦标记2;检焦标记2经投影成像系统3和多次反射棱镜4后成像在被检测面5上;多次反射棱镜4的上表面具有分光特性,而多次反射棱镜4的下表面具有反射特性,因此入射光经过多次反射棱镜4反射后,将形成个反射光线,即将检焦标记2形成多个具有复制特性的像,这些像不受检焦标记制作工艺影响其形状和位置关系是严格一致的;检焦标记2的像经过被检测面5及反射镜6的反射后由检焦标记放大系统7放大成像到探测器件8上,探测器件8得到的光信号将转换为电信号,由相应的电路系统将检测信号读出。通过工艺实验得到光刻投影物镜3a的理想成像焦面位置并对焦面检测系统进行标定,该焦面检测系统在标定以后可以实时测得光刻投影物镜3a实际成像面与理想焦面的位置差。The illumination system 1 shapes the light emitted by the light source to illuminate the focus detection mark 2; the focus detection mark 2 is imaged on the detected surface 5 after the projection imaging system 3 and the multiple reflection prism 4; the upper surface of the multiple reflection prism 4 has Spectroscopic characteristics, and the lower surface of the multiple reflection prism 4 has reflection characteristics, so after the incident light is reflected by the multiple reflection prism 4, a reflected light will be formed, that is, the focus detection mark 2 will form a plurality of images with reproduction characteristics, these images The shape and position relationship are strictly consistent without being affected by the manufacturing process of the focus detection mark; the image of the focus detection mark 2 is reflected by the detected surface 5 and the mirror 6 and then enlarged and imaged by the focus detection mark amplification system 7 onto the detection device 8 , the optical signal obtained by the detection device 8 will be converted into an electrical signal, and the detection signal will be read out by the corresponding circuit system. The ideal imaging focal plane position of the lithographic projection objective lens 3a is obtained through process experiments, and the focal plane detection system is calibrated. After calibration, the focal plane detection system can measure the position difference between the actual imaging plane of the lithographic projection objective lens 3a and the ideal focal plane in real time. .

所述的照明系统1采用宽带或单色光源,包括卤素灯、氙灯、LED或激光器等工程技术中常用的光源;The lighting system 1 adopts broadband or monochromatic light sources, including halogen lamps, xenon lamps, LEDs or lasers and other commonly used light sources in engineering technology;

所述的检焦标记2,是具有明暗形式的便于探测器件探测到标记,其中明暗形式的标记是:十字叉、直线、光栅、圆点和圆圈的一种。The focus inspection mark 2 is a light and dark mark that is easy to be detected by the detection device, wherein the light and dark mark is one of crosses, straight lines, gratings, dots and circles.

所述的多次反射棱镜4的外反射介质表面为分光面,根据实际需利用反射介质表面的部分反射或者通过镀膜等方法使其达到一定的分光比,多次反射棱镜4将入射的探测光分为两束探测光或两束以上的探测光。所述多次反射棱镜4的外反射表面的分光性质可以是分色分光、也可以是中性分光。所述多次反射棱镜4经外表面反射的主光线与经内表面反射再经外表面折射的主光线可以是平行的光线,也可以是成一角度的光线。The surface of the external reflection medium of the multiple reflection prism 4 is a spectroscopic surface. According to actual needs, the partial reflection of the surface of the reflection medium or through methods such as coating can be used to achieve a certain splitting ratio. The multiple reflection prism 4 converts the incident detection light Divided into two beams of probe light or more than two beams of probe light. The light-splitting property of the external reflection surface of the multiple reflection prism 4 can be color-splitting or neutral light-splitting. The chief ray reflected by the outer surface of the multiple reflection prism 4 and the chief ray reflected by the inner surface and then refracted by the outer surface may be parallel rays or rays at an angle.

所述被检测面5是位于光刻投影物镜1a像面的具有镜面反射、漫反射或散射性质的平面、曲面。The detected surface 5 is a plane or a curved surface with specular reflection, diffuse reflection or scattering properties located on the image plane of the lithography projection objective lens 1a.

所述探测器件8是不局限于CCD面阵探测器8,还可以是CMOS器件、两象限探测器、四象限探测器、位置探测器(PSD)及对光信号敏感的光电探测类器件中的一种。The detection device 8 is not limited to the CCD area detector 8, and can also be a CMOS device, a two-quadrant detector, a four-quadrant detector, a position detector (PSD) and a photoelectric detection device sensitive to optical signals. A sort of.

如图3所示,当光入射到多次反射棱镜4以后,部分光通过多次反射棱镜4的前表面反射,部分光透过多次反射棱镜4的前表面并由多次反射棱镜4的后表面反射再经前表面出射。若合理设计多次反射棱镜4前后表面的透过率和反射率,则可以使入射光分为两束或两束以上的光。这些光线均由同一光源和同一检焦标记2发出,具有严格的复制特征。As shown in Figure 3, after the light is incident on the multiple reflection prism 4, part of the light is reflected by the front surface of the multiple reflection prism 4, and part of the light passes through the front surface of the multiple reflection prism 4 and is reflected by the front surface of the multiple reflection prism 4. Reflection from the rear surface exits through the front surface. If the transmittance and reflectance of the front and rear surfaces of the multiple reflection prism 4 are reasonably designed, the incident light can be divided into two or more than two beams. These rays are all emitted by the same light source and the same focus inspection mark 2, and have strict reproduction characteristics.

如图4所示,由检焦标记2通过检焦标记投影成像系统3投影出的探测光分为两束或两束以上后,分别入射到被检测面5上。这些探测光沿水平方向有X的偏移,也就是说被探测位置也有X的偏移,通过多个点的位置探测,就可以实现被检测面的倾斜探测。由于所有的探测光都是由同一光源和同一检焦标记2发出,因此各个探测光严格一致;并且这些探测光均通过同一光学系统,因此可以消除掉光学系统加工、装调等因素产生的差异;综合以上优点,这样的结构安排可以增加调平调焦探测的精度。As shown in FIG. 4 , the detection light projected by the focus inspection mark 2 through the focus inspection mark projection imaging system 3 is divided into two or more beams, and then incident on the detected surface 5 respectively. These detection lights have an X offset along the horizontal direction, that is to say, the detected position also has an X offset. Through the position detection of multiple points, the tilt detection of the detected surface can be realized. Since all the probe lights are emitted by the same light source and the same focus mark 2, each probe light is strictly consistent; and these probe lights all pass through the same optical system, so the differences caused by factors such as optical system processing and assembly can be eliminated ; Based on the above advantages, such a structural arrangement can increase the accuracy of leveling and focusing detection.

上述附图和具体实施方式仅为本发明的一实施例,在不背离本发明的发明精神和权利要求书所界定的发明范围前提下,本发明可以有各种增补、修改和替代。因此,上述实施例是用于说明例证本发明而非限制本发明的范围,本发明的范围有权利要求及其合法同等物来界定,而不限于此前之描述。权利要求书旨在涵盖所有此类同等物。The above drawings and specific implementation are only an embodiment of the present invention. On the premise of not departing from the spirit of the present invention and the scope of the invention defined by the claims, the present invention can have various additions, modifications and substitutions. Therefore, the above-mentioned embodiments are used to illustrate and illustrate the present invention rather than to limit the scope of the present invention, which is defined by the claims and their legal equivalents, and not limited by the foregoing description. The claims are intended to cover all such equivalents.

Claims (8)

1. an optical system that is used for the projection lithography focal plane is characterized in that: be comprised of illuminator (1), focusing test mark (2), projection imaging system (3), Multi reflection prism (4), detected face (5), catoptron (6), focusing test mark amplification system (7) and sensitive detection parts (8); Focusing test mark (2) and projection imaging system (3) are positioned between illuminator (1) and the Multi reflection prism (4), detected face (5) is positioned between Multi reflection prism (4) and the catoptron (6), and focusing test mark amplification system (7) is positioned between catoptron (6) and the sensitive detection parts (8); Projection imaging system (3) provides illumination light with illuminator (1) coupling for illumination focusing test mark (2), Multi reflection prism (4) is divided into two bundles or the above detection light of two bundles with the incident light of the illumination focusing test mark (2) of illuminator (1), and it is not identical that every bundle is surveyed the position of light, the mark that focusing test mark (2) is surveyed optical position by projection imaging system (3) and Multi reflection prism (4) with every bundle is imaged onto on detected face (5) surface, through the detection light after detected face (5) reflection, after amplifying, focusing test mark amplification system (7) incides on the sensitive detection parts (8), utilize sensitive detection parts (8) to survey reflected image position after focusing test mark amplification system (7) is amplified, position of focal plane and the focal plane of photoetching projection objective lens (3a) tilted to detect; The reflective outer surface of described Multi reflection prism (4) is light splitting surface, described light splitting surface is to utilize the part reflection on reflecting medium surface or make light splitting surface reach the splitting ratio of setting by film plating process, and Multi reflection prism (4) is divided into two bundles or the above detection light of two bundles with the detection light of incident.
2. the optical system for the projection lithography focal plane according to claim 1 is characterized in that: described illuminator (1) adopts broadband or monochromatic source, and described broadband or monochromatic source comprise Halogen lamp LED, xenon lamp, LED or laser instrument.
3. the optical system for the projection lithography focal plane according to claim 1, it is characterized in that: described focusing test mark (2) has the mark that sensitive detection parts are surveyed of being convenient to of light and shade form, and wherein the mark of light and shade form is a kind of in spider, straight line, grating, round dot and the circle.
4. the optical system for the projection lithography focal plane according to claim 1 is characterized in that: the spectroscopic property of the reflective outer surface of described Multi reflection prism (4) can be the color separation light splitting, also can be neutral light splitting.
5. the optical system for the projection lithography focal plane according to claim 1, it is characterized in that: described Multi reflection prism (4) can be parallel light through the outside surface chief ray that reflects and the chief ray that reflects through outside surface again through internal surface reflection, also can be light at angle.
6. the optical system for the projection lithography focal plane according to claim 1, it is characterized in that: described detected face (5) is the plane with mirror-reflection, diffuse reflection or scattering nature, the curved surface that is positioned at photoetching projection objective lens (3a) image planes.
7. the optical system for the projection lithography focal plane according to claim 1, it is characterized in that: described sensitive detection parts (8) are not limited to the CCD planar array detector, can also be a kind of in cmos device, two quadrant detectors, the 4 quadrant detector.
8. utilize the optical system for the projection lithography focal plane claimed in claim 1, can also be applied to other poor occasions of needs detection image-forming objective lens actual imaging face and desirable position of focal plane, be used for the image-forming objective lens focal plane and can also be applied to the occasion that needs Precision positioning.
CN 201010605515 2010-12-27 2010-12-27 Optical system for focal plane detection in projection lithography Expired - Fee Related CN102087483B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201010605515 CN102087483B (en) 2010-12-27 2010-12-27 Optical system for focal plane detection in projection lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201010605515 CN102087483B (en) 2010-12-27 2010-12-27 Optical system for focal plane detection in projection lithography

Publications (2)

Publication Number Publication Date
CN102087483A CN102087483A (en) 2011-06-08
CN102087483B true CN102087483B (en) 2013-04-03

Family

ID=44099336

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201010605515 Expired - Fee Related CN102087483B (en) 2010-12-27 2010-12-27 Optical system for focal plane detection in projection lithography

Country Status (1)

Country Link
CN (1) CN102087483B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102236270B (en) * 2011-07-29 2012-12-19 中国科学院光电技术研究所 Focus detection device suitable for double-workpiece-table projection photoetching machine
CN102243138A (en) * 2011-08-05 2011-11-16 中国科学院光电技术研究所 A focal plane detection device used in projection lithography
CN103744269B (en) * 2014-01-03 2015-07-29 中国科学院上海光学精密机械研究所 The detection method of wave aberration of photoetching projection objective and imaging optimal focal plane
CN105807570B (en) * 2014-12-31 2018-03-02 上海微电子装备(集团)股份有限公司 The focusing leveling device and its method of adaptive groove
CN105807579B (en) * 2014-12-31 2018-10-16 上海微电子装备(集团)股份有限公司 A kind of silicon chip and substrate prealignment measuring device and method
CN107450287B (en) 2016-05-31 2019-10-25 上海微电子装备(集团)股份有限公司 Focusing and leveling measurement apparatus and method
JP7137363B2 (en) * 2018-06-11 2022-09-14 キヤノン株式会社 Exposure method, exposure apparatus, article manufacturing method and measurement method
CN109443210B (en) * 2018-12-13 2024-10-18 赫智科技(苏州)有限公司 Optical position detection device and method
CN112846485B (en) * 2020-12-31 2022-11-04 武汉华工激光工程有限责任公司 Laser processing monitoring method and device and laser processing equipment
CN115903408B (en) * 2021-09-30 2026-04-07 上海微电子装备(集团)股份有限公司 Focusing measurement system and photolithography equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2352976Y (en) * 1998-09-03 1999-12-08 中国科学院光电技术研究所 Focusing device of submicron photoetching machine
CN101201546A (en) * 2007-11-28 2008-06-18 上海微电子装备有限公司 An automatic focusing and leveling device
CN101403866A (en) * 2008-11-18 2009-04-08 上海微电子装备有限公司 Object position measurement apparatus and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH097915A (en) * 1995-06-15 1997-01-10 Nikon Corp Surface tilt detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2352976Y (en) * 1998-09-03 1999-12-08 中国科学院光电技术研究所 Focusing device of submicron photoetching machine
CN101201546A (en) * 2007-11-28 2008-06-18 上海微电子装备有限公司 An automatic focusing and leveling device
CN101403866A (en) * 2008-11-18 2009-04-08 上海微电子装备有限公司 Object position measurement apparatus and method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开平9-7915A 1997.01.10
唐圣彪 等.激光同步扫描三角测距成像系统的理论分析.《光电子·激光》.2001,第12卷(第6期), *

Also Published As

Publication number Publication date
CN102087483A (en) 2011-06-08

Similar Documents

Publication Publication Date Title
CN102087483B (en) Optical system for focal plane detection in projection lithography
CN102884609B (en) Testing fixture and inspection method
CN105890875B (en) A kind of projection objective performance testing device and method based on mask plate
US9164405B2 (en) Measurement apparatus for calculation of substrate tilt, exposure apparatus, and device fabrication method
CN106933071B (en) Focusing leveling device and method
TWI427433B (en) Measuring device, exposure device, and device manufacturing method
TWI764013B (en) Exposure apparatus and article manufacturing method
US20090262323A1 (en) Measurement apparatus, exposure apparatus, and device manufacturing method
CN103250232A (en) Surface inspection device and method thereof
CN103676487B (en) A kind of workpiece height measurement mechanism and bearing calibration thereof
CN102043352B (en) Focusing and leveling detection device
CN102566295A (en) Lithography device and method for measuring multi-light spot zero offset
JPH03246411A (en) Surface position detector
CN104375383B (en) Focusing-levelling detection device and method for lithographic equipment
KR100606493B1 (en) Abbe arm calibration system for use in lithographic apparatus
US7684050B2 (en) Shape measuring apparatus, shape measuring method, and exposure apparatus
CN102096337A (en) Detection device for eccentricity and focal plane position of spherical surface or curved surface in projection lithography
TWI358529B (en) Shape measuring apparatus, shape measuring method,
TWI658289B (en) Focusing and leveling device
CN102749808B (en) Focusing and leveling measurer
CN106814547B (en) A kind of detecting and correcting device and survey calibration method
JP7051193B2 (en) Level sensor and lithography equipment
CN103064264A (en) Focusing and leveling device
CN202257032U (en) Focusing and leveling device with stepped focusing marks
CN111982020A (en) A reflection type sample topography measuring device and method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130403

Termination date: 20141227

EXPY Termination of patent right or utility model