Design solutions for securing SRAM cell against power analysis
2012, 2012 IEEE International Symposium on Hardware-Oriented Security and Trust
https://doi.org/10.1109/HST.2012.6224331Abstract
Side channel attacks exploit physical imperfections of hardware to circumvent security features achieved by mathematically secure protocols and algorithms. This is achieved by monitoring physical quantities, usually power consumption or electromagnetic radiation, which contain information about the secret data. As a countermeasure, several circuit styles have been proposed for designing side-channel resistant logic gates and flip-flops. However, little effort has been made to develop secure memory arrays. An SRAM cell with 8 transistors has been proposed in order to obtain power analysis resistance by using a dual-rail precharge principle, the same technique used in various secure logic styles. In this paper we look into the practical aspects of this cell such as noise margins, layout strategy and read current. In addition, we propose alternative solutions for poweranalysis resistant SRAM. We compare these solutions in terms of data stability, delay and side-channel resistance.
References (9)
- P. Kocher, J. Jaffe, and B. Jun, "Differential power analysis," in Advances in Cryptology CRYPTO 99, ser. LNCS, M. Wiener, Ed. Springer Berlin / Heidelberg, 1999, vol. 1666, pp. 789-789.
- E. Brier, C. Clavier, and F. Olivier, "Correlation power analysis with a leakage model," in CHES 2004, ser. LNCS. Springer Berlin / Heidelberg, 2004, vol. 3156, pp. 135-152.
- S. Chari, J. Rao, and P. Rohatgi, "Template attacks," in CHES 2002, ser. LNCS. Springer Berlin / Heidelberg, 2003, vol. 2523, pp. 51-62.
- K. Tiri and I. Verbauwhede, "A digital design flow for secure integrated circuits," IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 25, no. 7, pp. 1197-1208, 2006.
- K. Tiri, M. Akmal, and I. Verbauwhede, "A dynamic and differential cmos logic with signal independent power consumption to withstand differential power analysis on smart cards," in Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European, 2002, pp. 403 -406.
- E. Konur, Y. Ozelci, E. Arikan, and U. Eksi, "Power Analysis Resistant SRAM," in Automation Congress, 2006. WAC '06. World, july 2006, pp. 1 -6.
- M. Ishida, T. Kawakami, A. Tsuji, N. Kawamoto, M. Motoyoshi, and N. Ouchi, "A novel 6T-SRAM cell technology designed with rectangular patterns scalable beyond 0.18 mu;m generation and desirable for ultra high speed operation," in Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International, dec 1998, pp. 201 -204.
- E. Seevinck, F. List, and J. Lohstroh, "Static-noise margin analysis of mos sram cells," Solid-State Circuits, IEEE Journal of, vol. 22, no. 5, pp. 748 -754, oct 1987.
- M. Renauld, D. Kamel, F.-X. Standaert, and D. Flandre, "Information Theoretic and Security Analysis of a 65-Nanometer DDSLL AES S-Box," in CHES, 2011, pp. 223-239.