Ito et al., 2003 - Google Patents

Advantages of thermal nitride and nitroxide gate films in VLSI process

Ito et al., 2003

Document ID
9720843058188485564
Author
Ito T
Nakamura T
Ishikawa H
Publication year
Publication venue
IEEE Journal of Solid-State Circuits

External Links

Snippet

Thin gate SiO/sub 2/films thinner than 200/spl Aring/often deteriorate throughout developmentaf VLSI processes, including refractory metal or silicide gates and ion-or plasma-assisted processes. Thermal nitridation of such SiO/sub 2/films improves the MOS …
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