Voldman et al., 2004 - Google Patents

The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS …

Voldman et al., 2004

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Document ID
9185113839243513575
Author
Voldman S
Lanzerotti L
Morris W
Rubin L
Publication year
Publication venue
2004 IEEE International Reliability Physics Symposium. Proceedings

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This paper will demonstrate the effect of heavily doped buried layers (HDBL) on electrostatic discharge protection, latchup, and silicon germanium (SiGe) heterojunction bipolar transistors (HBT). Heavily doped buried layers (HDBL) implants, in prior publications, have …
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