Plis et al., 2007 - Google Patents

Type II InAs∕ GaSb strain layer superlattice detectors with p-on-n polarity

Plis et al., 2007

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Document ID
7386572946120809632
Author
Plis E
Rodriguez J
Kim H
Bishop G
Sharma Y
Dawson L
Krishna S
Lee S
Jones C
Gopal V
Publication year
Publication venue
Applied Physics Letters

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We report on high operating temperature midwave infrared detectors based on type II In As∕ Ga Sb superlattices (SLs) with a p-on-n polarity. All In As∕ Ga Sb SLs photodiodes reported so far have a n-on-p polarity with a thin InAs n-type top contact, that is incompatible …
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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