Cho et al., 2014 - Google Patents

Effect of Oxidizable Electrode Material on Resistive Switching Characteristics of ZnO x S1− x Films

Cho et al., 2014

Document ID
5227939757427281502
Author
Cho K
Park S
Chung I
Kim S
Publication year
Publication venue
Journal of Nanoscience and Nanotechnology

External Links

Snippet

We investigate the memory characteristics of ZnO x S1− x based resistive switching random access memory (ReRAM) devices with Al and Pt bottom electrodes (BEs). Both the ReRAM devices with Al and Pt BEs exhibit unipolar resistive switching behaviors, regardless of the …
Continue reading at www.ingentaconnect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/12—Details
    • H01L45/122—Device geometry
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14—Selection of switching materials
    • H01L45/145—Oxides or nitrides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/16—Manufacturing
    • H01L45/1608—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14—Selection of switching materials
    • H01L45/141—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/08—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L49/00—Solid state devices not provided for in groups H01L27/00 - H01L47/00 and H01L51/00 and not provided for in any other subclass; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

Similar Documents

Publication Publication Date Title
Wang et al. Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters
Gul et al. ZnO and ZnO1− x based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior
Tsai et al. Impact of post-oxide deposition annealing on resistive switching in HfO 2-based oxide RRAM and conductive-bridge RAM devices
del Valle et al. Electrically induced multiple metal-insulator transitions in oxide nanodevices
Mao et al. Realization of forming-free ZnO-based resistive switching memory by controlling film thickness
Kang et al. NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment
Liu et al. Low-Power and Highly Uniform Switching in $\hbox {ZrO} _ {2} $-Based ReRAM With a Cu Nanocrystal Insertion Layer
Sadaf et al. Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
Cho et al. Current-induced metal–insulator transition in VOx thin film prepared by rapid-thermal-annealing
Hong et al. Improved resistive switching properties by nitrogen doping in tungsten oxide thin films
Liu et al. Improvement of resistive switching uniformity for Al–Zn–Sn–O-based memory device with inserting HfO 2 layer
Zhang et al. Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices
Lee et al. Unipolar Resistive Switching Characteristics of a $\hbox {ZrO} _ {2} $ Memory Device With Oxygen Ion Conductor Buffer Layer
Jou et al. Resistance switching of copper-doped tantalum oxide prepared by oxidation of copper-doped tantalum nitride
Guo et al. Uniform switching behavior of HfOx-based memory with gradual-grown filaments by interface modulation
Tang et al. Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation
Wu et al. Resistance switching of thin AlOx and Cu-doped-AlOx films
Wang et al. Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film
Chen et al. Improved Bipolar Resistive Switching of HfO x/TiN Stack with a Reactive Metal Layer and Post Metal Annealing
Jiang et al. Effect of voltage polarity and amplitude on electroforming of TiO 2 based memristive devices
Wang et al. Resistive switching characteristics of a spinel ZnAl2O4 thin film prepared by radio frequency sputtering
Cho et al. Effect of Oxidizable Electrode Material on Resistive Switching Characteristics of ZnO x S1− x Films
McDonald et al. Influence of the plasma oxidation power on the switching properties of Al/CuxO/Cu memristive devices
Hang-Bing et al. Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications
Zhou et al. A study of copper oxide based resistive switching memory by conductive atom force microscope