De Smedt et al., 2002 - Google Patents

The increasing importance of the use of ozone in the microelectronics industry

De Smedt et al., 2002

View PDF
Document ID
1798670483994458681
Author
De Smedt F
De Gendt S
Claes M
Heyns M
Vankerckhoven H
Vinckier C
Publication year
Publication venue
Ozone: science & engineering

External Links

Snippet

Recently the microelectronics industry is investigating the application of ozonated solutions in the cleaning of semiconductor devices as an alternative for the frequently used H2SO4- mixtures. The use of ozone would result in more environmentally friendly and cost-saving …
Continue reading at absoluteozone.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00—Special methods for preparing compositions containing mixtures of detergents ; Methods for using cleaning compositions
    • C11D11/0005—Special cleaning and washing methods
    • C11D11/0011—Special cleaning and washing methods characterised by the objects to be cleaned
    • C11D11/0023—"Hard" surfaces
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds

Similar Documents

Publication Publication Date Title
JP3061470B2 (en) Surface treatment method and treatment agent
KR101891363B1 (en) Composition for and method of suppressing titanium nitride corrosion
US5676760A (en) Method for wet processing of a semiconductor substrate
EP0867924B1 (en) Method for removing organic contaminants from a semiconductor surface
KR100303933B1 (en) Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
EP3004287B1 (en) Compositions and methods for selectively etching titanium nitride
TWI705134B (en) Non-amine post-cmp compositions and method of use
EP1345848B1 (en) Composition comprising an oxidizing and complexing compound
Reinhardt et al. Handbook for cleaning for semiconductor manufacturing: fundamentals and applications
EP3039098A1 (en) Compositions and methods for selectively etching titanium nitride
JP2681433B2 (en) Etching agent, method for etching silicon semiconductor member using the etching agent, and cleaning agent and method for cleaning silicon semiconductor member using the cleaning agent
De Smedt et al. The increasing importance of the use of ozone in the microelectronics industry
Yabune et al. Scientific wet process technology for innovative LSI/FPD manufacturing
US12444617B2 (en) Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
TWI743026B (en) Non-amine post-cmp compositions and method of use
Ryoo et al. Electrolyzed water as an alternative for environmentally benign semiconductor cleaning
JP4744228B2 (en) Semiconductor substrate cleaning liquid and semiconductor substrate cleaning method
US20060070979A1 (en) Using ozone to process wafer like objects
JPH11340182A (en) Cleaning agent for semiconductor surface, and method for cleaning
JPH03218015A (en) Cleaning fluid for semiconductor substrate and manufacture of semiconductor device
KR20060102244A (en) Semiconductor device cleaning composition
Knotter The chemistry of wet cleaning
Smedt et al. Advanced oxidation processes in the removal of organics from silicon surfaces in IC manufacturing: Theoretical concepts
KR20130062928A (en) Method for treatment of substrates and treatment composition for said method
GOTTSCHALK et al. Ozonated water—Where the green choice is better