Li et al., 2022 - Google Patents

A 79 GHz reconfigurable highly linear Low-Noise Amplifier for Civil-Automotive Short-Range-Radars in 22-nm FD-SOI CMOS

Li et al., 2022

Document ID
17658465979715029906
Author
Li S
Cui M
Szilagyi L
Carta C
Ellinger F
Publication year
Publication venue
2022 17th European Microwave Integrated Circuits Conference (EuMIC)

External Links

Snippet

This paper presents a reconfigurable highly linear low-noise amplifier (LNA) for civil- automotive radars in the predefined automotive short-range-radar (SRR) band from 77 GHz to 81 GHz. A simple two-bit control for gain and linearity is implemented, making this circuit …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45392—Indexing scheme relating to differential amplifiers the AAC comprising resistors in the source circuit of the AAC before the common source coupling
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45361—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1433—Balanced arrangements with transistors using bipolar transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products

Similar Documents

Publication Publication Date Title
ES3035610T3 (en) Wideband low noise amplifier (lna) with a reconfigurable bandwidth for millimeter-wave 5g communication
Kodak et al. A 42mW 26–28 GHz phased-array receive channel with 12 dB gain, 4 dB NF and 0 dBm IIP3 in 45nm CMOS SOI
CN102497167A (en) Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation
Liang et al. A tri (K/Ka/V)-band monolithic CMOS low noise amplifier with shared signal path and variable gains
Park et al. Low-power decibel-linear programmable-gain amplifier with complementary current-switching technique
Engelmann et al. A broadband 22nm FDSOI D-band power amplifier with dynamic back gate bias gain-linearization achieving 9.6% PAE at 8.7 dBm OPldB and 3.7% at 6 dB back-off
Kim et al. A Switchless, $ Q $-Band Bidirectional Transceiver in 0.12-$\mu $ m SiGe BiCMOS Technology
Wang et al. An E-band variable gain low noise amplifier in 90-nm CMOS process using body-floating and noise reduction techniques
Martins et al. A Class AB programmable gain amplifier for an UWB breast cancer detection system
Chen et al. A frequency reconfigurable phased-array front-end with enhanced image-rejection and high-resolution LO phase shifter for 5G FR2 n258/n260/n261 bands
Lee et al. A 150-GHz Single-to-Differential LNA Adopting Wideband G max-Cores Based on Single-Ended Compact Lumped L-C-L and Differential Coupled-Line Embedding Networks
Ahmed et al. A SiGe-based broadband 140–170-GHz downconverter for high resolution FMCW radar applications
Rajashekharaiah et al. A new gain controllable on-chip active balun for 5 GHz direct conversion receiver
Li et al. A 79 GHz reconfigurable highly linear Low-Noise Amplifier for Civil-Automotive Short-Range-Radars in 22-nm FD-SOI CMOS
Chen et al. A Frequency Reconfigurable Transceiver Front-End With Enhanced Out-of-Band-Rejection and High Phase Resolution for 5G mm-Wave Phased Arrays
Kashani et al. A 60-GHz CMOS down-conversion mixer with high conversion gain and low noise figure
Chen et al. A 3.5 GHz CMOS transceiver for sub-6GHz and mm-Wave co-existed 5G communication systems
Aksoyak et al. A SiGe-Based Quadrature D-Band Up-Converter with High Output Power
Del Rio et al. Multi-Gbps tri-band 28/38/60-GHz CMOS transmitter for millimeter-wave radio system-on-chip
Chai et al. Design of a 60-GHz receiver front-end with broadband matching techniques in 65-nm CMOS
Koop-Brinkmann et al. A low conversion loss 120 GHz passive IQ down-conversion subharmonic mixer with multiphase LO distribution in 28 nm CMOS
Chen et al. A Broadband Transmit-Receive Front-End with Three-λ/4-line-based T/R Switch for 5G FR2 Bands
Gharaba et al. A 2mW, 60GHz Mixer First I/Q Receiver in 28nm CMOS
Hietanen et al. Ka-Band TDD front-end with gate shunt switched cascode LNA and three-stack PA on 22nm FDSOI CMOS technology
Balasubramanian et al. A D-band 13-mW dual-mode CMOS LNA for joint radar–communication in 22-nm FD-SOI CMOS