Chen et al., 2013 - Google Patents

High-quality and efficient transfer of large-area graphene films onto different substrates

Chen et al., 2013

View PDF
Document ID
11251155788911478684
Author
Chen X
Liu Z
Zheng C
Xing F
Yan X
Chen Y
Tian J
Publication year
Publication venue
Carbon

External Links

Snippet

We used a two-layer structure consisting of polyethylene terephthalate (PET) and silicone to transfer graphene grown by chemical vapor deposition onto various rigid and flexible substrates through dispersive adhesion. It only takes a few seconds to transfer graphene …
Continue reading at nanocenter.nankai.edu.cn (PDF) (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438—Graphene
    • C01B31/0446—Preparation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048—Carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/022—Carbon nanotubes

Similar Documents

Publication Publication Date Title
Chen et al. High-quality and efficient transfer of large-area graphene films onto different substrates
Wang et al. Support-free transfer of ultrasmooth graphene films facilitated by self-assembled monolayers for electronic devices and patterns
Gong et al. Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide
Xie et al. Selective etching of graphene edges by hydrogen plasma
Pirkle et al. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
Kim et al. Ultraclean patterned transfer of single-layer graphene by recyclable pressure sensitive adhesive films
Kim et al. High-performance flexible graphene field effect transistors with ion gel gate dielectrics
Lee et al. Transparent flexible organic transistors based on monolayer graphene electrodes on plastic
Lee et al. All graphene-based thin film transistors on flexible plastic substrates
Kang et al. Efficient transfer of large-area graphene films onto rigid substrates by hot pressing
Kim et al. Large-scale pattern growth of graphene films for stretchable transparent electrodes
Li et al. Bioinspired wafer-scale production of highly stretchable carbon films for transparent conductive electrodes.
Chae et al. Transferred wrinkled Al2O3 for highly stretchable and transparent graphene–carbon nanotube transistors
Pan et al. Wrinkle engineering: a new approach to massive graphene nanoribbon arrays
Jeong et al. Improved transfer of chemical-vapor-deposited graphene through modification of intermolecular interactions and solubility of poly (methylmethacrylate) layers
Levesque et al. Probing charge transfer at surfaces using graphene transistors
Su et al. Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition
Lafkioti et al. Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions
Ramón et al. CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films
Liu et al. Large-scale graphene transistors with enhanced performance and reliability based on interface engineering by phenylsilane self-assembled monolayers
Mogera et al. Highly decoupled graphene multilayers: turbostraticity at its best
Shen et al. Rational design on wrinkle‐less transfer of transition metal dichalcogenide monolayer by adjustable wettability‐assisted transfer method
CN103265018B (en) A kind of dielectric base is directly prepared the method for Graphene
Wan et al. Interface engineering for CVD graphene: current status and progress
Han et al. Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study