UST964009I4 - High voltage semiconductor structure - Google Patents

High voltage semiconductor structure Download PDF

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Publication number
UST964009I4
UST964009I4 US05/673,510 US67351076A UST964009I4 US T964009 I4 UST964009 I4 US T964009I4 US 67351076 A US67351076 A US 67351076A US T964009 I4 UST964009 I4 US T964009I4
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US
United States
Prior art keywords
insulating layer
overlying
region
electrode
high voltage
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US05/673,510
Inventor
Te-Long Chiu
Madhukar B. Vora
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Publication date
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Priority to US05/673,510 priority Critical patent/UST964009I4/en
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Publication of UST964009I4 publication Critical patent/UST964009I4/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

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  • Electrodes Of Semiconductors (AREA)

Abstract

in a field effect transistor having a semiconductor body, spaced source and drain regions, an insulating layer on the surface of the body, and an electrode to the source region, the improvement being a field shield electrode on the insulating layer overlying at least the PN junction of the drain region that terminates at the interface of the surface of the body and the insulating layer, and a gate electrode on the insulating layer over at least a portion of the channel region, the gate electrode and the field shield electrode in combination overlying all of the channel region. Another feature of the invention is a high voltage line for use on a semiconductor device consisting of a diffused region of opposite conductivity in the semiconductor body, an overlying insulating layer having an opening therein, and an overlying field shield conductive stripe that overlies the PN junction of the diffused region that terminates at the surface of the body.
US05/673,510 1975-02-06 1976-04-05 High voltage semiconductor structure Pending UST964009I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/673,510 UST964009I4 (en) 1975-02-06 1976-04-05 High voltage semiconductor structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54791275A 1975-02-06 1975-02-06
US05/673,510 UST964009I4 (en) 1975-02-06 1976-04-05 High voltage semiconductor structure

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US54791275A Continuation 1975-02-06 1975-02-06

Publications (1)

Publication Number Publication Date
UST964009I4 true UST964009I4 (en) 1977-11-01

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ID=27068696

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/673,510 Pending UST964009I4 (en) 1975-02-06 1976-04-05 High voltage semiconductor structure

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US (1) UST964009I4 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209716A (en) 1977-05-31 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer
US4234889A (en) 1977-05-31 1980-11-18 Texas Instruments Incorporated Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
US4240097A (en) 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
US4399449A (en) 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
EP0037115B1 (en) * 1980-03-31 1985-08-07 Siemens Aktiengesellschaft Planar semiconductor with increased breakdown voltage
US4538166A (en) 1979-12-29 1985-08-27 Fujitsu Limited Semiconductor memory device
US4654680A (en) 1980-09-24 1987-03-31 Semiconductor Energy Laboratory Co., Ltd. Sidewall gate IGFET
US4757362A (en) 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4947232A (en) 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
US5187552A (en) * 1979-03-28 1993-02-16 Hendrickson Thomas E Shielded field-effect transistor devices
US7745301B2 (en) 2005-08-22 2010-06-29 Terapede, Llc Methods and apparatus for high-density chip connectivity
US8957511B2 (en) 2005-08-22 2015-02-17 Madhukar B. Vora Apparatus and methods for high-density chip connectivity

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234889A (en) 1977-05-31 1980-11-18 Texas Instruments Incorporated Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
US4240097A (en) 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
US4209716A (en) 1977-05-31 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in second-level polycrystalline silicon layer
US5187552A (en) * 1979-03-28 1993-02-16 Hendrickson Thomas E Shielded field-effect transistor devices
US4538166A (en) 1979-12-29 1985-08-27 Fujitsu Limited Semiconductor memory device
US4947232A (en) 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
EP0037115B1 (en) * 1980-03-31 1985-08-07 Siemens Aktiengesellschaft Planar semiconductor with increased breakdown voltage
US4757362A (en) 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4654680A (en) 1980-09-24 1987-03-31 Semiconductor Energy Laboratory Co., Ltd. Sidewall gate IGFET
US4399449A (en) 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
US7745301B2 (en) 2005-08-22 2010-06-29 Terapede, Llc Methods and apparatus for high-density chip connectivity
US8957511B2 (en) 2005-08-22 2015-02-17 Madhukar B. Vora Apparatus and methods for high-density chip connectivity

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