TWI801261B - Power supply device with fast discharge function - Google Patents
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Description
本發明係關於一種電源供應器,特別係關於一種可快速放電之電源供應器。This invention relates to a power supply, and more particularly to a power supply capable of rapid discharge.
在傳統電源供應器中,其輸出電容器通常具有較大之電容值。即使將電源供應器之一外部輸入電源移除,此輸出電容器仍可於一段維持時間內提供電力,故容易造成對應之系統發生誤判及執行錯誤之模式切換。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之缺陷。In traditional power supplies, the output capacitors typically have large capacitance values. Even after removing one of the external input power sources, these output capacitors can still provide power for a period of time, which can easily cause the corresponding system to misjudge and perform incorrect mode switching. In view of this, it is necessary to propose a completely new solution to overcome the shortcomings of previous technologies.
在較佳實施例中,本發明提出一種快速放電之電源供應器,包括:一橋式整流器,根據一第一輸入電位和一第二輸入電位來產生一整流電位;一升壓電感器,接收該整流電位;一功率切換器,根據一第一脈波寬度調變電位來選擇性地將該升壓電感器耦接至一接地電位;一偵測及控制電路,偵測是否有任何輸入電流通過該橋式整流器,並據以產生該第一脈波寬度調變電位、一第一控制電位、一第二控制電位,以及一邏輯電位;一第一輸出級電路,耦接至該升壓電感器,其中該第一輸出級電路係根據該第一控制電位來選擇性地產生一中間電位;一分壓電路,根據該中間電位來產生一分壓電位;一切換電路,由該分壓電位來進行供電,其中該切換電路係根據該中間電位來產生一切換電位;一放電電路,根據該第二控制電位和該邏輯電位來選擇性地針對該第一輸出級電路和該切換電路執行放電操作;一變壓器,包括一主線圈、一第一副線圈,以及一第二副線圈,其中該變壓器內建一漏電感器和一激磁電感器,而該主線圈係經由該漏電感器接收該切換電位;一諧振電容器,耦接至該激磁電感器;以及一第二輸出級電路,耦接至該第一副線圈和該第二副線圈,並產生一輸出電位。In a preferred embodiment, the present invention provides a fast-discharge power supply, comprising: a bridge rectifier that generates a rectified potential based on a first input potential and a second input potential; a boost inductor that receives the rectified potential; a power switch that selectively couples the boost inductor to a ground potential based on a first pulse width modulation potential; a detection and control circuit that detects whether any input current flows through the bridge rectifier and generates the first pulse width modulation potential, a first control potential, a second control potential, and a logical potential accordingly; and a first output stage circuit coupled to the boost inductor, wherein the first output stage circuit selectively generates an intermediate voltage based on the first control potential. The circuit includes: a voltage divider circuit that generates a voltage divider potential based on the intermediate potential; a switching circuit that is powered by the voltage divider potential, wherein the switching circuit generates the switching potential based on the intermediate potential; a discharge circuit that selectively performs discharge operations on the first output stage circuit and the switching circuit based on the second control potential and the logical potential; a transformer including a main coil, a first auxiliary coil, and a second auxiliary coil, wherein the transformer has a built-in leakage inductor and a magnetizing inductor, and the main coil receives the switching potential through the leakage inductor; a resonant capacitor coupled to the magnetizing inductor; and a second output stage circuit coupled to the first auxiliary coil and the second auxiliary coil, and generating an output potential.
為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。To make the purpose, features and advantages of this invention clearer and easier to understand, specific embodiments of this invention are given below, and detailed explanations are provided in conjunction with the accompanying drawings.
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain terms are used in this specification and the scope of the patent application to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. This specification and the scope of the patent application do not distinguish components by name, but by functional differences. The terms "comprising" and "including" used throughout this specification and the scope of the patent application are open-ended and should be interpreted as "including but not limited to". The term "generally" means that, within an acceptable range of error, those skilled in the art can solve the described technical problem and achieve the described basic technical effect within a certain range of error. Furthermore, the term "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if the text describes a first device coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device via other devices or connection means.
第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一橋式整流器110、一升壓電感器LU、一功率切換器120、一偵測及控制電路130、一第一輸出級電路140、一分壓電路150、一切換電路160、一放電電路170、一變壓器180、一諧振電容器CR,以及一第二輸出級電路190。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。Figure 1 is a schematic diagram showing a power supply 100 according to an embodiment of the present invention. For example, the power supply 100 can be applied to a desktop computer, a laptop computer, or an all-in-one computer. As shown in Figure 1, the power supply 100 includes: a bridge rectifier 110, a boost inductor 100, a power switch 120, a detection and control circuit 130, a first output stage circuit 140, a voltage divider circuit 150, a switching circuit 160, a discharge circuit 170, a transformer 180, a resonant capacitor CR, and a second output stage circuit 190. It should be noted that, although not shown in Figure 1, the power supply 100 may also include other components, such as a voltage regulator or (and) a negative feedback circuit.
橋式整流器110可根據一第一輸入電位VIN1和一第二輸入電位VIN2來產生一整流電位VR,其中第一輸入電位VIN1和第二輸入電位VIN2之間可形成具有任意頻率和任意振幅之一交流電壓。例如,交流電壓之頻率可約為50Hz或60Hz,而交流電壓之方均根值可約由90V至264V,但亦不僅限於此。升壓電感器LU可接收整流電位VR。功率切換器120可根據一第一脈波寬度調變電位VM1來選擇性地將升壓電感器LU耦接至一接地電位VSS(例如:0V)。例如,若第一脈波寬度調變電位VM1為一高邏輯位準(亦即,邏輯「1」),則功率切換器120可將升壓電感器LU耦接至接地電位VSS(亦即,功率切換器120可近似於一短路路徑);反之,若第一脈波寬度調變電位VM1為一低邏輯位準(亦即,邏輯「0」),則功率切換器120不會將升壓電感器LU耦接至接地電位VSS(亦即,功率切換器120可近似於一開路路徑)。偵測及控制電路130可偵測是否有任何輸入電流IIN通過橋式整流器110,並可據以產生第一脈波寬度調變電位VM1、一第一控制電位VC1、一第二控制電位VC2,以及一邏輯電位VG。第一輸出級電路140係耦接至升壓電感器LU,其中第一輸出級電路140可根據第一控制電位VC1來選擇性地產生一中間電位VE。分壓電路150可根據中間電位VE來產生一分壓電位VD。切換電路160可由分壓電位VD來進行供電,其中切換電路160更可根據中間電位VE來產生一切換電位VW。放電電路170可根據第二控制電位VC2和邏輯電位VG來選擇性地針對第一輸出級電路140和切換電路160執行放電操作。變壓器180包括一主線圈181、一第一副線圈182,以及一第二副線圈183。變壓器180更可內建一漏電感器LR和一激磁電感器LM,其中漏電感器LR、激磁電感器LM,以及主線圈181皆可位於變壓器180之同一側,而第一副線圈182和第二副線圈183則皆可位於變壓器180之相對另一側。主線圈181可經由漏電感器LR接收切換電位VW,而第一副線圈182和第二副線圈183則可回應於切換電位VW來進行操作。諧振電容器CR係耦接至激磁電感器LM。第二輸出級電路190係耦接至第一副線圈182和第二副線圈183,並可產生一輸出電位VOUT。例如,輸出電位VOUT可為一直流電位,其電位位準可介於18V至20V之間,但亦不僅限於此。在此設計下,電源供應器100可藉由分析輸入電流IIN來判斷其外部輸入電源是否被移除,再選擇性地執行對應之快速放電操作,從而可有效提升其整體之可靠度及穩定度。The bridge rectifier 110 generates a rectified potential VR based on a first input potential VIN1 and a second input potential VIN2, wherein an AC voltage with arbitrary frequency and amplitude can be formed between the first input potential VIN1 and the second input potential VIN2. For example, the frequency of the AC voltage can be approximately 50Hz or 60Hz, and the root mean square value of the AC voltage can be approximately from 90V to 264V, but is not limited thereto. The boost inductor LU receives the rectified potential VR. The power switch 120 selectively couples the boost inductor LU to a ground potential VSS (e.g., 0V) based on a first pulse width modulation potential VM1. For example, if the first pulse width modulation potential VM1 is a high logical level (i.e., logical "1"), then the power switch 120 can couple the boost inductor LU to the ground potential VSS (i.e., the power switch 120 can be approximated as a short-circuit path); conversely, if the first pulse width modulation potential VM1 is a low logical level (i.e., logical "0"), then the power switch 120 will not couple the boost inductor LU to the ground potential VSS (i.e., the power switch 120 can be approximated as an open-circuit path). The detection and control circuit 130 can detect whether any input current IIN passes through the bridge rectifier 110, and can generate a first pulse width modulation potential VM1, a first control potential VC1, a second control potential VC2, and a logical potential VG accordingly. The first output stage circuit 140 is coupled to the boost inductor LU, wherein the first output stage circuit 140 can selectively generate an intermediate potential VE based on the first control potential VC1. The voltage divider circuit 150 can generate a voltage divider potential VD based on the intermediate potential VE. The switching circuit 160 can be powered by the voltage divider potential VD, wherein the switching circuit 160 can further generate a switching potential VW based on the intermediate potential VE. The discharge circuit 170 can selectively perform discharge operations on the first output stage circuit 140 and the switching circuit 160 according to the second control potential VC2 and the logical potential VG. The transformer 180 includes a main coil 181, a first auxiliary coil 182, and a second auxiliary coil 183. The transformer 180 may also have a built-in leakage inductor LR and a magnetizing inductor LM, wherein the leakage inductor LR, the magnetizing inductor LM, and the main coil 181 can all be located on the same side of the transformer 180, while the first auxiliary coil 182 and the second auxiliary coil 183 can both be located on the opposite side of the transformer 180. The main coil 181 receives the switching potential VW via the leakage inductor LR, while the first auxiliary coil 182 and the second auxiliary coil 183 respond to the switching potential VW to perform operation. The resonant capacitor CR is coupled to the magnetizing inductor LM. The second output stage circuit 190 is coupled to the first auxiliary coil 182 and the second auxiliary coil 183 and can generate an output potential VOUT. For example, the output potential VOUT can be a DC potential with a potential level between 18V and 20V, but is not limited to this. In this design, the power supply 100 can determine whether its external power supply has been removed by analyzing the input current IIN, and then selectively perform the corresponding fast discharge operation, thereby effectively improving its overall reliability and stability.
以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will describe the detailed structure and operation of the power supply 100. It must be understood that these figures and descriptions are merely illustrative and are not intended to limit the scope of the invention.
第2圖係顯示根據本發明一實施例所述之電源供應器200之電路圖。在第2圖之實施例中,在第2圖之實施例中,電源供應器200具有一第一輸入節點NIN1、一第二輸入節點NIN2,以及一輸出節點NOUT,並包括:一橋式整流器210、一升壓電感器LU、一功率切換器220、一偵測及控制電路230、一第一輸出級電路240、一分壓電路250、一切換電路260、一放電電路270、一變壓器280、一諧振電容器CR,以及一第二輸出級電路290。電源供應器200之第一輸入節點NIN1和第二輸出節點NIN2可分別由一外部輸入電源處(未顯示)接收一第一輸入電位VIN1和一第二輸入電位VIN2,而電源供應器200之輸出節點NOUT則可用於輸出一輸出電位VOUT至一電子裝置(未顯示)。Figure 2 shows a circuit diagram of a power supply 200 according to an embodiment of the present invention. In the embodiment of Figure 2, the power supply 200 has a first input node NIN1, a second input node NIN2, and an output node NOUT, and includes: a bridge rectifier 210, a boost inductor LU, a power switch 220, a detection and control circuit 230, a first output stage circuit 240, a voltage divider circuit 250, a switching circuit 260, a discharge circuit 270, a transformer 280, a resonant capacitor CR, and a second output stage circuit 290. The first input node NIN1 and the second output node NIN2 of the power supply 200 can receive a first input potential VIN1 and a second input potential VIN2 respectively from an external input power source (not shown), while the output node NOUT of the power supply 200 can be used to output an output potential VOUT to an electronic device (not shown).
橋式整流器210包括一第一二極體D1、一第二二極體D2、一第三二極體D3,以及一第四二極體D4。第一二極體D1具有一陽極和一陰極,其中第一二極體D1之陽極係耦接至第一輸入節點NIN1,而第一二極體D1之陰極係耦接至一第一節點N1以輸出一整流電位VR。第二二極體D2具有一陽極和一陰極,其中第二二極體D2之陽極係耦接至第二輸入節點NIN2,而第二二極體D2之陰極係耦接至第一節點N1。第三二極體D3具有一陽極和一陰極,其中第三二極體D3之陽極係耦接至一第二節點N2,而第三二極體D3之陰極係耦接至第一輸入節點NIN1。第四二極體D4具有一陽極和一陰極,其中第四二極體D4之陽極係耦接至一第三節點N3,而第四二極體D4之陰極係耦接至第二輸入節點NIN2。The bridge rectifier 210 includes a first diode D1, a second diode D2, a third diode D3, and a fourth diode D4. The first diode D1 has an anode and a cathode, wherein the anode of the first diode D1 is coupled to a first input node NIN1, and the cathode of the first diode D1 is coupled to a first node N1 to output a rectified potential VR. The second diode D2 has an anode and a cathode, wherein the anode of the second diode D2 is coupled to a second input node NIN2, and the cathode of the second diode D2 is coupled to a first node N1. The third diode D3 has an anode and a cathode, wherein the anode of the third diode D3 is coupled to a second node N2, and the cathode of the third diode D3 is coupled to a first input node NIN1. The fourth diode D4 has an anode and a cathode, wherein the anode of the fourth diode D4 is coupled to a third node N3, and the cathode of the fourth diode D4 is coupled to a second input node NIN2.
升壓電感器LU具有一第一端和一第二端,其中升壓電感器LU之第一端係耦接至第一節點N1以接收整流電位VR,而升壓電感器LU之第二端係耦接至一第四節點N4。The boost inductor LU has a first terminal and a second terminal, wherein the first terminal of the boost inductor LU is coupled to a first node N1 to receive a rectified potential VR, and the second terminal of the boost inductor LU is coupled to a fourth node N4.
功率切換器220包括一第一電晶體M1。例如,第一電晶體M1可為一N型金氧半場效電晶體(N-type Metal-Oxide-Semiconductor Field-Effect Transistor,NMOSFET)。第一電晶體M1具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第一電晶體M1之控制端係用於接收一第一脈波寬度調變電位VM1,第一電晶體M1之第一端係耦接至一接地電位VSS,而第一電晶體M1之第二端係耦接至第四節點N4。The power switch 220 includes a first transistor M1. For example, the first transistor M1 may be an N-type metal-oxide-semiconductor field-effect transistor (NMOSFET). The first transistor M1 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the first transistor M1 is used to receive a first pulse width modulation potential VM1, the first terminal of the first transistor M1 is coupled to a ground potential VSS, and the second terminal of the first transistor M1 is coupled to a fourth node N4.
偵測及控制電路230包括一第一電阻器R1、一第二電阻器R2、一第一誤差放大器(Error Amplifier,EA)232、一第二誤差放大器234、一及閘(AND Gate)236,以及一第一脈波寬度調變積體電路(Pulse Width Modulation Integrated Circuit,PWM IC)238。第一電阻器R1具有一第一端和一第二端,其中第一電阻器R1之第一端係耦接至第二節點N2以輸出一第一電位V1,而第一電阻器R1之第二端係耦接至接地電位VSS。第二電阻器R2具有一第一端和一第二端,其中第二電阻器R2之第一端係耦接至第三節點N3以輸出一第二電位V2,而第二電阻器R2之第二端係耦接至接地電位VSS。在一些實施例中,第一電阻器R1和第二電阻器R2皆具有極小之電阻值(例如:小於5歐姆)。第一誤差放大器232可比較第一電位V1與接地電位VSS,以產生一第一比較電位VB1。例如,若第一電位V1等於接地電位VSS(亦即, ),則第一誤差放大器232可產生具有高邏輯位準之第一比較電位VB1;反之,若第一電位V1不等於接地電位VSS(亦即, ),則第一誤差放大器232可產生具有低邏輯位準之第一比較電位VB1。第二誤差放大器234可比較第二電位V2與接地電位VSS,以產生一第二比較電位VB2。例如,若第二電位V2等於接地電位VSS(亦即, ),則第二誤差放大器234可產生具有高邏輯位準之第二比較電位VB2;反之,若第二電位V2不等於接地電位VSS(亦即, ),則第二誤差放大器234可產生具有低邏輯位準之第二比較電位VB2。在一些實施例中,第一誤差放大器232和第二誤差放大器234之取樣週期係至少為16.67ms,以對應於一般市電之操作頻率60Hz。及閘236具有一第一輸入端、一第二輸入端,以及一輸出端,其中及閘236之第一輸入端係用於接收第一比較電位VB1,及閘236之第二輸入端係用於接收第二比較電位VB2,而及閘236之輸出端係用於輸出一邏輯電位VG。例如,只有在第一比較電位VB1和第二比較電位VB2皆為高邏輯位準之情況下,及閘236才會產生具有高邏輯位準之邏輯電位VG;否則,及閘236皆會產生具有低邏輯位準之邏輯電位VG。第一脈波寬度調變積體電路238可根據邏輯電位VG來產生第一脈波寬度調變電位VM1、一第一控制電位VC1,以及一第二控制電位VC2,其操作原理將於後續之實施例中作詳細說明。 The detection and control circuit 230 includes a first resistor R1, a second resistor R2, a first error amplifier (EA) 232, a second error amplifier 234, an AND gate 236, and a first pulse width modulation integrated circuit (PWM IC) 238. The first resistor R1 has a first terminal and a second terminal, wherein the first terminal of the first resistor R1 is coupled to a second node N2 to output a first potential V1, and the second terminal of the first resistor R1 is coupled to a ground potential VSS. The second resistor R2 has a first terminal and a second terminal, wherein the first terminal of the second resistor R2 is coupled to a third node N3 to output a second potential V2, and the second terminal of the second resistor R2 is coupled to a ground potential VSS. In some embodiments, both the first resistor R1 and the second resistor R2 have extremely small resistance values (e.g., less than 5 ohms). The first error amplifier 232 can compare the first potential V1 with the ground potential VSS to generate a first comparison potential VB1. For example, if the first potential V1 equals the ground potential VSS (i.e., ...), If the first error amplifier 232 generates a first comparison potential VB1 with a high logical level, then the first error amplifier 232 can generate a first comparison potential VB1 with a high logical level; conversely, if the first potential V1 is not equal to the ground potential VSS (i.e., ...), If the first error amplifier 232 generates a first comparison potential VB1 with a low logical level, then the second error amplifier 234 can compare the second potential V2 with the ground potential VSS to generate a second comparison potential VB2. For example, if the second potential V2 equals the ground potential VSS (i.e., ...), If the second error amplifier 234 generates a second comparison potential VB2 with a high logical level, then the second error amplifier 234 can generate a second comparison potential VB2 with a high logical level; conversely, if the second potential V2 is not equal to the ground potential VSS (i.e., ...), If the first error amplifier 232 and the second error amplifier 234 are used, the second error amplifier 234 can generate a second comparison potential VB2 with a low logical level. In some embodiments, the sampling period of the first error amplifier 232 and the second error amplifier 234 is at least 16.67 ms to correspond to a typical mains operating frequency of 60 Hz. The gate 236 has a first input, a second input, and an output, wherein the first input of the gate 236 is used to receive the first comparison potential VB1, the second input of the gate 236 is used to receive the second comparison potential VB2, and the output of the gate 236 is used to output a logical potential VG. For example, gate 236 will only generate a logical potential VG with a high logical level if both the first comparison potential VB1 and the second comparison potential VB2 are at high logical levels; otherwise, gate 236 will generate a logical potential VG with a low logical level. The first pulse width modulation integrated circuit 238 can generate a first pulse width modulation potential VM1, a first control potential VC1, and a second control potential VC2 based on the logical potential VG. Its operating principle will be explained in detail in subsequent embodiments.
輸出級電路240包括一第五二極體D5、一第一電容器C1,以及一第二電晶體M2。第五二極體D5具有一陽極和一陰極,其中第五二極體D5之陽極係耦接至第四節點N4,而第五二極體D5之陰極係耦接至一第五節點N5。第一電容器C1具有一第一端和一第二端,其中第一電容器C1之第一端係耦接至第五節點N5,而第一電容器C1之第二端係耦接至接地電位VSS。第二電晶體M2可為一N型金氧半場效電晶體。第二電晶體M2具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第二電晶體M2之控制端係用於接收第一控制電位VC1,第二電晶體M2之第一端係耦接至一第六節點N6以選擇性地輸出一中間電位VE,而第二電晶體M2之第二端係耦接至第五節點N5。The output stage circuit 240 includes a fifth diode D5, a first capacitor C1, and a second transistor M2. The fifth diode D5 has an anode and a cathode, wherein the anode of the fifth diode D5 is coupled to a fourth node N4, and the cathode of the fifth diode D5 is coupled to a fifth node N5. The first capacitor C1 has a first terminal and a second terminal, wherein the first terminal of the first capacitor C1 is coupled to the fifth node N5, and the second terminal of the first capacitor C1 is coupled to ground potential VSS. The second transistor M2 may be an N-type metal-oxide-semiconductor field-effect transistor. The second transistor M2 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain). The control terminal of the second transistor M2 is used to receive a first control potential VC1. The first terminal of the second transistor M2 is coupled to a sixth node N6 to selectively output an intermediate potential VE. The second terminal of the second transistor M2 is coupled to a fifth node N5.
分壓電路250包括一第三電阻器R3和一第四電阻器R4。第三電阻器R3具有一第一端和一第二端,其中第三電阻器R3之第一端係耦接至第六節點N6以接收中間電位VE,而第三電阻器R3之第二端係耦接至一第七節點N7以輸出一分壓電位VD。第四電阻器R4具有一第一端和一第二端,其中第四電阻器R4之第一端係耦接至第七節點N7,而第四電阻器R4之第二端係耦接至接地電位VSS。The voltage divider circuit 250 includes a third resistor R3 and a fourth resistor R4. The third resistor R3 has a first terminal and a second terminal, wherein the first terminal of the third resistor R3 is coupled to the sixth node N6 to receive the intermediate potential VE, and the second terminal of the third resistor R3 is coupled to the seventh node N7 to output a voltage divider potential VD. The fourth resistor R4 has a first terminal and a second terminal, wherein the first terminal of the fourth resistor R4 is coupled to the seventh node N7, and the second terminal of the fourth resistor R4 is coupled to the ground potential VSS.
切換電路260包括一第二脈波寬度調變積體電路268、一第三電晶體M3,以及一第四電晶體M4。第二脈波寬度調變積體電路268可由分壓電位VD來進行供電。例如,若分壓電位VD為高邏輯位準,則第二脈波寬度調變積體電路268將可被致能,以產生一第二脈波寬度調變電位VM2和一第三脈波寬度調變電位VM3;反之,若分壓電位VD為低邏輯位準,則第二脈波寬度調變積體電路268將可被禁能,且不會產生任何脈波寬度調變電位。第二脈波寬度調變電位VM2和第三脈波寬度調變電位VM3兩者可具有互補(Complementary)之邏輯位準。第三電晶體M3和第四電晶體M4可各自為一N型金氧半場效電晶體。第三電晶體M3具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第三電晶體M3之控制端係用於接收第二脈波寬度調變電位VM2,第三電晶體M3之第一端係耦接至一第八節點以輸出一切換電位VW,而第三電晶體M3之第二端係耦接至第六節點N6以接收中間電位VE。第四電晶體M4具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第四電晶體M4之控制端係用於接收第三脈波寬度調變電位VM3,第四電晶體M4之第一端係耦接至接地電位VSS,而第四電晶體M4之第二端係耦接至第八節點N8。The switching circuit 260 includes a second pulse width modulation (PWM) integrated circuit 268, a third transistor M3, and a fourth transistor M4. The second PWM integrated circuit 268 can be powered by a voltage divider potential VD. For example, if the voltage divider potential VD is at a high logical level, the second PWM integrated circuit 268 can be enabled to generate a second PWM potential VM2 and a third PWM potential VM3; conversely, if the voltage divider potential VD is at a low logical level, the second PWM integrated circuit 268 can be disabled and no PWM potentials will be generated. The second pulse width modulation potential VM2 and the third pulse width modulation potential VM3 can have complementary logical levels. The third transistor M3 and the fourth transistor M4 can each be an N-type metal-oxide-semiconductor field-effect transistor. The third transistor M3 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain). The control terminal of the third transistor M3 is used to receive the second pulse width modulation potential VM2. The first terminal of the third transistor M3 is coupled to an eighth node to output the switching potential VW, and the second terminal of the third transistor M3 is coupled to a sixth node N6 to receive the intermediate potential VE. The fourth transistor M4 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain). The control terminal of the fourth transistor M4 is used to receive the third pulse width modulation potential VM3. The first terminal of the fourth transistor M4 is coupled to the ground potential VSS, and the second terminal of the fourth transistor M4 is coupled to the eighth node N8.
放電電路270包括一第五電晶體M5、一第六電晶體M6、一第五電阻器R5,以及一第六電阻器R6。第五電晶體M5和第六電晶體M6可各自為一N型金氧半場效電晶體。第五電晶體M5具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第五電晶體M5之控制端係用於接收第二控制電位VC2,第五電晶體M5之第一端係耦接至一第九節點N9,而第五電晶體M5之第二端係耦接至第五節點N5。第五電阻器R5具有一第一端和一第二端,其中第五電阻器R5之第一端係耦接至第九節點N9,而第五電阻器R5之第二端係耦接至接地電位VSS。第六電晶體M6具有一控制端(例如:一閘極)、一第一端(例如:一源極),以及一第二端(例如:一汲極),其中第六電晶體M6之控制端係用於接收邏輯電位VG,第六電晶體M6之第一端係耦接至一第十節點N10,而第六電晶體M6之第二端係耦接至第八節點N8。第六電阻器R6具有一第一端和一第二端,其中第六電阻器R6之第一端係耦接至第十節點N10,而第六電阻器R6之第二端係耦接至接地電位VSS。The discharge circuit 270 includes a fifth transistor M5, a sixth transistor M6, a fifth resistor R5, and a sixth resistor R6. The fifth transistor M5 and the sixth transistor M6 can each be an N-type metal-oxide-semiconductor field-effect transistor. The fifth transistor M5 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain). The control terminal of the fifth transistor M5 is used to receive a second control potential VC2. The first terminal of the fifth transistor M5 is coupled to a ninth node N9, and the second terminal of the fifth transistor M5 is coupled to the fifth node N5. The fifth resistor R5 has a first terminal and a second terminal. The first terminal of the fifth resistor R5 is coupled to the ninth node N9, and the second terminal of the fifth resistor R5 is coupled to a ground potential VSS. The sixth transistor M6 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain). The control terminal of the sixth transistor M6 is used to receive a logical potential VG. The first terminal of the sixth transistor M6 is coupled to a tenth node N10, and the second terminal of the sixth transistor M6 is coupled to an eighth node N8. The sixth resistor R6 has a first terminal and a second terminal. The first terminal of the sixth resistor R6 is coupled to the tenth node N10, and the second terminal of the sixth resistor R6 is coupled to a ground potential VSS.
變壓器280包括一主線圈281、一第一副線圈282,以及一第二副線圈283,其中變壓器280更內建一漏電感器LR和一激磁電感器LM。漏電感器LR和激磁電感器LM皆可為變壓器280製造時所附帶產生之固有元件,其並非外部獨立元件。漏電感器LR、主線圈281,以及激磁電感器LM皆可位於變壓器280之同一側(例如:一次側),而第一副線圈282和第二副線圈283則皆可位於變壓器280之相對另一側(例如:二次側,其可與一次側互相隔離開來)。漏電感器LR具有一第一端和一第二端,其中漏電感器LR之第一端係耦接至第八節點N8以接收切換電位VW,而漏電感器LR之第二端係耦接至一第十一節點N11。主線圈281具有一第一端和一第二端,其中主線圈281之第一端係耦接至第十一節點N11,而主線圈281之第二端係耦接至一第十二節點N12。激磁電感器LM具有一第一端和一第二端,其中激磁電感器LM之第一端係耦接至第十一節點N11,而激磁電感器LM之第二端係耦接至第十二節點N12。諧振電容器CR具有一第一端和一第二端,其中諧振電容器CR之第一端係耦接至第十二節點N12,而諧振電容器CR之第二端係耦接至接地電位VSS。例如,漏電感器LR、激磁電感器LM,以及諧振電容器CR三者可共同形成電源供應器200之一諧振槽(Resonant Tank)。第一副線圈282具有一第一端和一第二端,其中第一副線圈282之第一端係耦接至一第十三節點N13,而第一副線圈282之第二端係耦接至一共同節點NCM。例如,共同節點NCM可視為另一接地電位,其可與前述之接地電位VSS相同或相異。第二副線圈283具有一第一端和一第二端,其中第二副線圈283之第一端係耦接至共同節點NCM,而第二副線圈283之第二端係耦接至一第十四節點N14。Transformer 280 includes a main coil 281, a first auxiliary coil 282, and a second auxiliary coil 283. Transformer 280 also integrates a leakage inductor LR and a magnetizing inductor LM. The leakage inductor LR and magnetizing inductor LM are inherent components generated during the manufacturing of transformer 280 and are not external independent components. The leakage inductor LR, main coil 281, and magnetizing inductor LM can all be located on the same side of transformer 280 (e.g., the primary side), while the first auxiliary coil 282 and second auxiliary coil 283 can both be located on the opposite side of transformer 280 (e.g., the secondary side, which can be isolated from the primary side). The leakage inductor LR has a first terminal and a second terminal, wherein the first terminal of the leakage inductor LR is coupled to the eighth node N8 to receive the switching potential VW, and the second terminal of the leakage inductor LR is coupled to the eleventh node N11. The main coil 281 has a first terminal and a second terminal, wherein the first terminal of the main coil 281 is coupled to the eleventh node N11, and the second terminal of the main coil 281 is coupled to the twelfth node N12. The magnetizing inductor LM has a first terminal and a second terminal, wherein the first terminal of the magnetizing inductor LM is coupled to the eleventh node N11, and the second terminal of the magnetizing inductor LM is coupled to the twelfth node N12. The resonant capacitor CR has a first terminal and a second terminal, wherein the first terminal of the resonant capacitor CR is coupled to the twelfth node N12, and the second terminal of the resonant capacitor CR is coupled to the ground potential VSS. For example, the leakage inductor LR, the magnetizing inductor LM, and the resonant capacitor CR can together form a resonant tank in the power supply 200. The first sub-coil 282 has a first end and a second end, wherein the first end of the first sub-coil 282 is coupled to a thirteenth node N13, and the second end of the first sub-coil 282 is coupled to a common node NCM. For example, the common node NCM can be considered as another ground potential, which may be the same as or different from the aforementioned ground potential VSS. The second sub-coil 283 has a first end and a second end, wherein the first end of the second sub-coil 283 is coupled to the common node NCM, and the second end of the second sub-coil 283 is coupled to a fourteenth node N14.
第二輸出級電路290包括一第六二極體D6、一第七二極體D7,以及一第二電容器C2。第六二極體D6具有一陽極和一陰極,其中第六二極體D6之陽極係耦接至第十三節點N13,而第六二極體D6之陰極係耦接至輸出節點NOUT。第七二極體D7具有一陽極和一陰極,其中第七二極體D7之陽極係耦接至第十四節點N14,而第七二極體D7之陰極係耦接至輸出節點NOUT。第二電容器C2具有一第一端和一第二端,其中第二電容器C2之第一端係耦接至輸出節點NOUT,而第二電容器C2之第二端係耦接至共同節點NCM。The second output stage circuit 290 includes a sixth diode D6, a seventh diode D7, and a second capacitor C2. The sixth diode D6 has an anode and a cathode, wherein the anode of the sixth diode D6 is coupled to the thirteenth node N13, and the cathode of the sixth diode D6 is coupled to the output node NOUT. The seventh diode D7 has an anode and a cathode, wherein the anode of the seventh diode D7 is coupled to the fourteenth node N14, and the cathode of the seventh diode D7 is coupled to the output node NOUT. The second capacitor C2 has a first terminal and a second terminal, wherein the first terminal of the second capacitor C2 is coupled to the output node NOUT, and the second terminal of the second capacitor C2 is coupled to the common node NCM.
在一些實施例中,電源供應器200可操作於一正常供電模式或一斷電模式,其操作原理可分別如下列所述。In some embodiments, the power supply 200 can operate in a normal power supply mode or a power outage mode, and its operating principles can be described as follows.
在正常供電模式下,電源供應器200係耦接至一外部輸入電源,其中不為0之一輸入電流將會進入橋式整流器210當中。例如,此輸入電流可形成通過第一電阻器R1之一第一電流I1,抑或可形成通過第二電阻器R2之一第二電流I2兩者擇一。根據歐姆定律,第一電位V1可與第一電流I1成正比關係,而第二電位V2則可與第二電流I2成正比關係。由於第一電流I1和第二電流I2之中恰有一者等於0,故第一比較電位VB1和第二比較電位VB2之一者將為低邏輯位準,而第一比較電位VB1和第二比較電位VB2之另一者將為高邏輯位準。此時,邏輯電位VG將為低邏輯位準以禁能第六電晶體M6。回應於低邏輯位準之邏輯電位VG,第一脈波寬度調變積體電路238會正常輸出第一脈波寬度調變電位VM1。另外,第一脈波寬度調變積體電路238還會輸出具有高邏輯位準之第一控制電位VC1以致能第二電晶體M2,並輸出具有低邏輯位準之第二控制電位VC2以禁能第五電晶體M5。亦即,第一輸出級電路240將會正常提供電力給第二脈波寬度調變積體電路268,但放電電路270不會針對第一輸出級電路240和切換電路260執行任何放電操作。In normal power supply mode, power supply 200 is coupled to an external input power source, where a non-zero input current flows into bridge rectifier 210. For example, this input current can either form a first current I1 through the first resistor R1 or a second current I2 through the second resistor R2. According to Ohm's law, the first potential V1 is proportional to the first current I1, and the second potential V2 is proportional to the second current I2. Since exactly one of the first current I1 and the second current I2 is zero, one of the first comparison potential VB1 and the second comparison potential VB2 will be a low logical level, while the other will be a high logical level. At this time, the logic potential VG will be at a low logic level to disable the sixth transistor M6. In response to the low logic level logic potential VG, the first pulse width modulation circuit 238 will normally output the first pulse width modulation potential VM1. In addition, the first pulse width modulation circuit 238 will also output a first control potential VC1 with a high logic level to enable the second transistor M2, and output a second control potential VC2 with a low logic level to disable the fifth transistor M5. That is, the first output stage circuit 240 will normally provide power to the second pulse width modulation integrated circuit 268, but the discharge circuit 270 will not perform any discharge operation on the first output stage circuit 240 and the switching circuit 260.
在斷電模式下,前述之外部輸入電源已被移除,故不會有任何輸入電流進入橋式整流器210當中。此時,通過第一電阻器R1之第一電流I1和通過第二電阻器R2之第二電流I2兩者皆等於0,且第一比較電位VB1和第二比較電位VB2兩者皆為高邏輯位準。是以,邏輯電位VG將為高邏輯位準以致能第六電晶體M6。回應於高邏輯位準之邏輯電位VG,第一脈波寬度調變積體電路238會停止輸出第一脈波寬度調變電位VM1。另外,第一脈波寬度調變積體電路238還會輸出具有低邏輯位準之第一控制電位VC1以禁能第二電晶體M2,並輸出具有高邏輯位準之第二控制電位VC2以致能第五電晶體M5。亦即,第一輸出級電路240將會停止提供電力給第二脈波寬度調變積體電路268。放電電路270將會針對第一輸出級電路240之第一電容器C1執行一快速放電操作。再者,放電電路270還會針對切換電路260之切換電位VW執行另一放電操作,使得前述之諧振槽不會再提供能量給第二輸出級電路290之第二電容器C2。In power-off mode, the aforementioned external input power supply has been removed, so no input current enters the bridge rectifier 210. At this time, both the first current I1 through the first resistor R1 and the second current I2 through the second resistor R2 are equal to 0, and both the first comparison potential VB1 and the second comparison potential VB2 are at high logical levels. Therefore, the logical potential VG will be at a high logical level, enabling the sixth transistor M6. In response to the high logical level logical potential VG, the first pulse width modulation integrated circuit 238 will stop outputting the first pulse width modulation potential VM1. Furthermore, the first pulse width modulation integrated circuit 238 will output a first control potential VC1 with a low logical level to disable the second transistor M2, and output a second control potential VC2 with a high logical level to enable the fifth transistor M5. That is, the first output stage circuit 240 will stop supplying power to the second pulse width modulation integrated circuit 268. The discharge circuit 270 will perform a fast discharge operation on the first capacitor C1 of the first output stage circuit 240. Furthermore, the discharge circuit 270 will also perform another discharge operation on the switching potential VW of the switching circuit 260, so that the aforementioned resonant slot will no longer supply energy to the second capacitor C2 of the second output stage circuit 290.
第3圖係顯示根據本發明一實施例所述之電源供應器200之輸出電位VOUT之電位波形圖,其中橫軸代表時間,而縱軸代表電位位準。根據第3圖之量測結果,若電源供應器200之外部輸入電源於一特定時間點TS處遭移除,則第二電容器C2所儲存之輸出電位VOUT將可僅具有介於8ms至15ms之間之一維持時間TH。在維持時間TH屆滿後,輸出電位VOUT即下降至低邏輯位準。相較於傳統設計之維持時間往往長達60ms或70ms,本發明所提之快速放電設計已可大幅縮短電源供應器200之輸出電位VOUT之維持時間TH。Figure 3 shows the potential waveform of the output potential VOUT of the power supply 200 according to an embodiment of the present invention, where the horizontal axis represents time and the vertical axis represents the potential level. According to the measurement results in Figure 3, if the external input power supply of the power supply 200 is removed at a specific time point TS, the output potential VOUT stored in the second capacitor C2 will have a duration TH between 8ms and 15ms. After the duration TH expires, the output potential VOUT drops to a low logic level. Compared to the traditional design where the duration is often as long as 60ms or 70ms, the fast discharge design proposed in this invention can significantly shorten the duration TH of the output potential VOUT of the power supply 200.
本發明提出一種新穎之電源供應器,其可有效縮短電源供應器之輸出電位之維持時間,從而能降低模式切換錯誤之機率。根據實際量測結果,使用前述設計之電源供應器其穩定度和可靠度皆有明顯改善,故其很適合應用於各種各式之裝置當中。This invention proposes a novel power supply that effectively shortens the duration of the power supply's output potential, thereby reducing the probability of mode switching errors. Based on actual measurement results, the power supply using the aforementioned design exhibits significantly improved stability and reliability, making it well-suited for various applications.
值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-3圖所圖示之狀態。本發明可以僅包括第1-3圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the potential, current, resistance, inductance, capacitance, and other component parameters mentioned above are not limiting conditions of this invention. Designers can adjust these settings according to different needs. The power supply of this invention is not limited to the state illustrated in Figures 1-3. This invention may include only any one or more features of any one or more embodiments of Figures 1-3. In other words, not all features illustrated need to be implemented simultaneously in the power supply of this invention. Although the embodiments of this invention use metal-oxide-semiconductor field-effect transistors as examples, this invention is not limited to this. Those skilled in the art can use other types of transistors, such as junction field-effect transistors or fin field-effect transistors, without affecting the effect of this invention.
在本說明書以及申請專利範圍中的序數,例如「第一」、「第二」、「第三」等等,彼此之間並沒有順序上的先後關係,其僅用於標示區分兩個具有相同名字之不同元件。The ordinal numbers in this specification and the scope of the patent application, such as "first", "second", "third", etc., are not sequential and are only used to distinguish two different elements with the same name.
本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the scope of the invention. Anyone skilled in the art may make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention shall be determined by the appended patent application.
100,200:電源供應器 110,210:橋式整流器 120,220:功率切換器 130,230:偵測及控制電路 140,240:第一輸出級電路 150,250:分壓電路 160,260:切換電路 170,270:放電電路 180,280:變壓器 181,281:主線圈 182,282:第一副線圈 183,283:第二副線圈 190,290:第二輸出級電路 232:第一誤差放大器 234:第二誤差放大器 236:及閘 238:第一脈波寬度調變積體電路 268:第二脈波寬度調變積體電路 C1:第一電容器 C2:第二電容器 CR:諧振電容器 D1:第一二極體 D2:第二二極體 D3:第三二極體 D4:第四二極體 D5:第五二極體 D6:第六二極體 D7:第七二極體 I1:第一電流 I2:第二電流 IIN:輸入電流 LM:激磁電感器 LR:漏電感器 LU:升壓電感器 M1:第一電晶體 M2:第二電晶體 M3:第三電晶體 M4:第四電晶體 M5:第五電晶體 M6:第六電晶體 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 N6:第六節點 N7:第七節點 N8:第八節點 N9:第九節點 N10:第十節點 N11:第十一節點 N12:第十二節點 N13:第十三節點 N14:第十四節點 NCM:共同節點 NIN1:第一輸入節點 NIN2:第二輸入節點 NOUT:輸出節點 R1:第一電阻器 R2:第二電阻器 R3:第三電阻器 R4:第四電阻器 R5:第五電阻器 R6:第六電阻器 TH:維持時間 TS:特定時間點 V1:第一電位 V2:第二電位 VB1:第一比較電位 VB2:第二比較電位 VC1:第一控制電位 VC2:第二控制電位 VD:分壓電位 VE:中間電位 VG:邏輯電位 VIN1:第一輸入電位 VIN2:第二輸入電位 VM1:第一脈波寬度調變電位 VM2:第二脈波寬度調變電位 VM3:第三脈波寬度調變電位 VOUT:輸出電位 VR:整流電位 VSS:接地電位 VW:切換電位100, 200: Power Supply 110, 210: Bridge Rectifier 120, 220: Power Switch 130, 230: Detection and Control Circuit 140, 240: First Output Stage Circuit 150, 250: Voltage Divider Circuit 160, 260: Switching Circuit 170, 270: Discharge Circuit 180, 280: Transformer 181, 281: Main Coil 182, 282: First Auxiliary Coil 183, 283: Second Auxiliary Coil 190, 290: Second Output Stage Circuit 232: First Error Amplifier 234: Second Error Amplifier 236: Gate 238: First Pulse Width Modulation Integrated Circuit 268: Second Pulse Width Modulation Integrated Circuit C1: First Capacitor C2: Second Capacitor CR: Resonant Capacitor D1: First Diode D2: Second Diode D3: Third Diode D4: Fourth Diode D5: Fifth Diode D6: Sixth Diode D7: Seventh Diode I1: First Current I2: Second Current IIN: Input Current LM: Magnetizing Inductor LR: Leakage Inductor LU: Boost Inductor M1: First Transistor M2: Second Transistor M3: Third Transistor M4: Fourth Transistor M5: Fifth Transistor M6: Sixth Transistor N1: First Node N2: Second Node N3: Third Node N4: Fourth Node N5: Fifth Node N6: Sixth Node N7: Seventh Node N8: Eighth Node N9: Ninth Node N10: Tenth Node N11: Eleventh Node N12: Twelfth Node N13: Thirteenth Node N14: Fourteenth Node NCM: Common Node NIN1: First Input Node NIN2: Second Input Node NOUT: Output Node R1: First Resistor R2: Second Resistor R3: Third Resistor R4: Fourth Resistor R5: Fifth Resistor R6: Sixth Resistor TH: Duration TS: Specific Time Point V1: First Potential V2: Second Potential VB1: First Comparison Potential VB2: Second Comparison Potential VC1: First Control Potential VC2: Second Control Potential VD: Voltage Divider Potential VE: Intermediate Potential VG: Logic Potential VIN1: First Input Potential VIN2: Second Input Potential VM1: First Pulse Width Modulation Potential VM2: Second Pulse Width Modulation Potential VM3: Third Pulse Width Modulation Potential VOUT: Output Potential VR: Rectified Potential VSS: Ground Potential VW: Switching Potential
第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之電路圖。 第3圖係顯示根據本發明一實施例所述之電源供應器之輸出電位之電位波形圖。 Figure 1 is a schematic diagram showing a power supply according to an embodiment of the present invention. Figure 2 is a circuit diagram showing the power supply according to an embodiment of the present invention. Figure 3 is a potential waveform diagram showing the output potential of the power supply according to an embodiment of the present invention.
100:電源供應器 100: Power Supply
110:橋式整流器 110: Bridge rectifier
120:功率切換器 120: Power Switch
130:偵測及控制電路 130: Detection and Control Circuits
140:第一輸出級電路 140: First output stage circuit
150:分壓電路 150: Voltage divider circuit
160:切換電路 160: Switching Circuit
170:放電電路 170: Discharge circuit
180:變壓器 180: Transformer
181:主線圈 181: Main Story Circle
182:第一副線圈 182: First coil
183:第二副線圈 183: Second coil
190:第二輸出級電路 190: Second output stage circuit
CR:諧振電容器 CR: Resonant Capacitor
IIN:輸入電流 IIN: Input Current
LM:激磁電感器 LM: Magnetizing Inductor
LR:漏電感器 LR: Leakage Inductor
LU:升壓電感器 LU: Boost Inductor
VC1:第一控制電位 VC1: First control potential
VC2:第二控制電位 VC2: Second control potential
VD:分壓電位 VD: Voltage divider potential
VE:中間電位 VE: intermediate potential
VG:邏輯電位 VG: Logical Potential
VIN1:第一輸入電位 VIN1: First input potential
VIN2:第二輸入電位 VIN2: Second input potential
VM1:第一脈波寬度調變電位 VM1: First pulse width modulation potential
VOUT:輸出電位 VOUT: Output potential
VR:整流電位 VR: Rectified Potential
VSS:接地電位 VSS: Grounding Potential
VW:切換電位 VW: Switching potential
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