TWI523136B - Semiconductor process temperature measuring device - Google Patents

Semiconductor process temperature measuring device Download PDF

Info

Publication number
TWI523136B
TWI523136B TW102125803A TW102125803A TWI523136B TW I523136 B TWI523136 B TW I523136B TW 102125803 A TW102125803 A TW 102125803A TW 102125803 A TW102125803 A TW 102125803A TW I523136 B TWI523136 B TW I523136B
Authority
TW
Taiwan
Prior art keywords
temperature measuring
semiconductor
measuring device
process temperature
tested
Prior art date
Application number
TW102125803A
Other languages
Chinese (zh)
Other versions
TW201505114A (en
Inventor
林武郎
鄭煌玉
賴威任
王陳右
黃政禮
陳世敏
郭明倫
石玉光
Original Assignee
技鼎股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 技鼎股份有限公司 filed Critical 技鼎股份有限公司
Priority to TW102125803A priority Critical patent/TWI523136B/en
Priority to CN201310308482.2A priority patent/CN104299925A/en
Publication of TW201505114A publication Critical patent/TW201505114A/en
Application granted granted Critical
Publication of TWI523136B publication Critical patent/TWI523136B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Description

半導體製程溫度量測裝置 Semiconductor process temperature measuring device

本發明係關於一種半導體製程溫度量測裝置之設計,特別是關於一種可靠度佳的半導體製程溫度量測裝置。 The present invention relates to the design of a semiconductor process temperature measuring device, and more particularly to a semiconductor process temperature measuring device with good reliability.

半導體可作為集成電路所用的載體。半導體的製造流程包含了許多種處理方式,包括感光劑塗佈、曝光、顯影、腐蝕、及滲透等等,以製成具有多層線路的元件,並經由檢測、封裝,而製成實際可用的積體電路成品。 Semiconductors can be used as carriers for integrated circuits. The manufacturing process of semiconductors includes a variety of processing methods, including sensitizer coating, exposure, development, etching, and infiltration, etc., to fabricate components with multilayer wiring, and to make practically available products through inspection and packaging. The finished body circuit.

半導體的製造過程須經過反覆進行的熱處理,包括熱氧化製程、退火處理、AI熱壓法、熱圓滑處理、冷卻硬化等,以逐步製造為成品。而為了控制熱處理的溫度以達到預期製造效果,並且避免溫度不當所產生的產品損壞,通常藉由一溫度量測裝置,以量測半導體製程的溫度。 The manufacturing process of the semiconductor must be subjected to repeated heat treatment, including thermal oxidation process, annealing treatment, AI hot pressing method, hot rounding treatment, cooling hardening, etc., to gradually manufacture into finished products. In order to control the temperature of the heat treatment to achieve the desired manufacturing effect, and to avoid product damage caused by improper temperature, the temperature of the semiconductor process is usually measured by a temperature measuring device.

習知的半導體溫度量測裝置通常使用一熱電耦貼附於一溫度待測物的表面。然而,溫度待測物常會因熱處理過程中的溫度變化,而產生熱脹冷縮,並進一步導致熱電耦自溫度待測物脫落,如此不但使得溫度監控的可靠度不佳,甚至可能會進一步導致熱處理的溫度控制不當,而影響到半導體的製造良率。 Conventional semiconductor temperature measuring devices typically use a thermocouple attached to the surface of a temperature object to be tested. However, the temperature test object often causes thermal expansion and contraction due to temperature changes during the heat treatment process, and further causes the thermocouple to fall off from the temperature test object, which not only makes the temperature monitoring reliability poor, and may even further lead to The temperature of the heat treatment is improperly controlled, which affects the manufacturing yield of the semiconductor.

鑒於以上所述,如何避免熱電耦等溫度量測構件脫離原本的量測位置,係為一項重要的研究課題。 In view of the above, how to avoid the temperature measurement component such as thermocouple from the original measurement position is an important research topic.

緣此,本發明之目的即是提供一種半導體製程溫度量測裝置,有效地於固定位置量測溫度,以改善習知技術之問題。 Accordingly, it is an object of the present invention to provide a semiconductor process temperature measuring device that effectively measures temperature at a fixed location to improve the problems of the prior art.

本發明為解決習知技術之問題所採用之技術手段係為一種半導體製程溫度量測裝置,包含一受測本體及一溫度量測構件。於受測本體上形成有一凹部。溫度量測構件之一感應端連接且熱接觸於受測本體,且感應端為由一黏著物件同時與凹部所包覆。其中受測本體為用於置放半導體的一置物本體,且置物本體為置放半導體而熱接觸於半導體,或受測本體為半導體。 The technical means adopted by the present invention to solve the problems of the prior art is a semiconductor process temperature measuring device comprising a tested body and a temperature measuring member. A recess is formed on the body to be tested. One of the temperature measuring members is connected to the sensing end and is in thermal contact with the body to be tested, and the sensing end is covered by the adhesive member simultaneously with the concave portion. The body to be tested is a body for placing a semiconductor, and the body is thermally contacted with the semiconductor for placing the semiconductor, or the body to be tested is a semiconductor.

在本發明的一實施例中,黏著物件凸起於相鄰於凹部之一凸部的上表面。 In an embodiment of the invention, the adhesive member protrudes from an upper surface adjacent to the convex portion of one of the recesses.

在本發明的一實施例中,凹部之形狀選自線形、圓形、同心狀、多邊形、放射狀所組成之群組之其中之一或多數個。 In an embodiment of the invention, the shape of the recess is selected from one or a plurality of groups consisting of a line, a circle, a concentric shape, a polygon, and a radial shape.

在本發明的一實施例中,凹部之寬度在深度方向上由窄漸寬、由寬漸窄、或等寬。 In an embodiment of the invention, the width of the recess is narrowed in width, narrowed in width, or equal in width in the depth direction.

在本發明的一實施例中,多數個感應端之間的距離為相同。 In an embodiment of the invention, the distance between the plurality of sensing ends is the same.

在本發明的一實施例中,單一個黏著物件黏著於多數個凹部。 In an embodiment of the invention, a single adhesive member is adhered to a plurality of recesses.

在本發明的一實施例中,凹部形成於受測本體之表面。 In an embodiment of the invention, the recess is formed on the surface of the body to be tested.

在本發明的一實施例中,凹部可為以雷射切割方式、蝕刻方式、或銑削方式所形成。 In an embodiment of the invention, the recess may be formed by a laser cutting method, an etching method, or a milling method.

經由本發明所採用之技術手段,藉由黏著物件黏著於受測本體的凹部,使溫度量測構件之感應端為熱接觸連接於受測本體。藉此使黏著物件與受測本體之間的熱應力作用更強,而使黏著物件更為卡合於凹部,以讓感應端更有效地固定於受測本體,以增強溫度監控的可靠度。再者,藉由本發明之設置方式,更可將感應端固定於難以接著的材料上面,並可具有更寬的可靠溫度量測範圍。此外,更進一步能使得黏著物件與受測本體的使用壽命較長。藉此而有效地調控半導體的環境溫度,以提昇製造 良率。 Through the technical means adopted by the present invention, the adhesive end of the temperature measuring member is thermally contacted to the body to be tested by the adhesive member adhering to the concave portion of the body to be tested. Thereby, the thermal stress between the adhesive object and the tested body is stronger, and the adhesive object is more engaged with the concave portion, so that the sensing end is more effectively fixed to the tested body to enhance the reliability of temperature monitoring. Moreover, with the arrangement of the present invention, the sensing end can be fixed on the material that is difficult to be connected, and can have a wider and reliable temperature measurement range. In addition, it is further possible to make the adhesive article and the tested body have a longer service life. Thereby effectively controlling the ambient temperature of the semiconductor to enhance manufacturing Yield.

本發明所採用的具體實施例,將藉由以下之實施例及附呈圖式作進一步之說明。 The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.

100、100a、100b、100c、100d‧‧‧半導體製程溫度量測裝置 100, 100a, 100b, 100c, 100d‧‧‧ semiconductor process temperature measuring device

1、1b、1c、1d‧‧‧受測本體 1, 1b, 1c, 1d‧‧‧ tested ontology

11‧‧‧凹部 11‧‧‧ recess

12‧‧‧凸部 12‧‧‧ convex

2‧‧‧溫度量測構件 2‧‧‧Temperature measuring components

21‧‧‧感應端 21‧‧‧ Sensing end

3‧‧‧黏著物件 3‧‧‧Adhesive objects

4‧‧‧置物本體 4‧‧‧Store object

D1、D2‧‧‧距離 D1, D2‧‧‧ distance

L1、L1‧‧‧中心線 L1, L1‧‧‧ center line

W‧‧‧半導體 W‧‧‧Semiconductor

第1圖係顯示依據本發明之一實施例的半導體製程溫度量測裝置之立體圖。 1 is a perspective view showing a semiconductor process temperature measuring device according to an embodiment of the present invention.

第2圖係顯示依據本發明之另一實施例的半導體製程溫度量測裝置之立體圖。 Fig. 2 is a perspective view showing a semiconductor process temperature measuring device according to another embodiment of the present invention.

第3圖係顯示依據本發明之另一實施例的半導體製程溫度量測裝置之剖視圖。 Figure 3 is a cross-sectional view showing a semiconductor process temperature measuring device in accordance with another embodiment of the present invention.

第4圖係顯示依據本發明之另一實施例的受測本體之仰視圖。 Figure 4 is a bottom plan view showing a body to be tested in accordance with another embodiment of the present invention.

第5圖係顯示依據本發明之另一實施例的半導體製程溫度量測裝置之剖視圖。 Figure 5 is a cross-sectional view showing a semiconductor process temperature measuring device in accordance with another embodiment of the present invention.

第6圖係顯示依據本發明之另一實施例的半導體製程溫度量測裝置之剖視圖。 Figure 6 is a cross-sectional view showing a semiconductor process temperature measuring device in accordance with another embodiment of the present invention.

第7圖係顯示依據本發明之再一實施例的半導體製程溫度量測裝置之剖視圖。 Figure 7 is a cross-sectional view showing a semiconductor process temperature measuring device according to still another embodiment of the present invention.

第8A至8F圖係顯示依據本發明之各實施例的凹部的側視圖。 Figures 8A through 8F show side views of recesses in accordance with various embodiments of the present invention.

第9A至9H圖係顯示依據本發明之各實施例的凹部的上視圖。 Figures 9A through 9H show top views of recesses in accordance with various embodiments of the present invention.

第10A至10D圖係顯示依據本發明之各實施例的感應端的配置圖。 10A through 10D are diagrams showing the configuration of the sensing end in accordance with various embodiments of the present invention.

請參閱第1圖所示,依據本發明之一實施例的一半導體製程溫度量測裝置100包含一受測本體1及一溫度量測構件2,在本實施例中,受測本體1係為一半導體,一置物本體4用於置放受測本體1。受測本體1形成有一凹部11,形成於受測本體1之上表面。 Referring to FIG. 1 , a semiconductor process temperature measuring device 100 according to an embodiment of the present invention includes a body 1 to be tested and a temperature measuring member 2 . In this embodiment, the body 1 to be tested is A semiconductor, a housing body 4 for placing the body 1 to be tested. The body 1 to be tested is formed with a recess 11 formed on the upper surface of the body 1 to be tested.

溫度量測構件2之一感應端21連接且熱接觸於受測本體1,且感應端21為由黏著於凹部11的一黏著物件3所包覆。在本實施例中,溫度量測構件2為一熱電耦(Thermal Couple),而黏著物件3為一陶瓷膏。然而,本發明不限於,溫度量測構件2也可為其他可量測溫度之物件,例如熱敏電阻,而黏著物件3也可為銲錫、或其他類似物,只要可以包覆感應端2且將感應端2固定於受測本體1即可。 One of the sensing ends 21 of the temperature measuring member 2 is connected and thermally in contact with the body 1 to be tested, and the sensing end 21 is covered by an adhesive member 3 adhered to the recess 11. In the present embodiment, the temperature measuring member 2 is a thermal couple, and the adhesive member 3 is a ceramic paste. However, the present invention is not limited to the temperature measuring member 2, and may be other objects capable of measuring temperature, such as a thermistor, and the adhesive member 3 may also be solder, or the like, as long as the sensing end 2 can be covered. The sensing end 2 is fixed to the body 1 to be tested.

溫度量測構件2之感應端21藉由黏著物件3之固定而熱接觸於受測本體1,藉此量測受測本體1之溫度,以進一步獲得半導體之製程溫度。並且黏著物件3為黏著於凹部11之中,所以熱處理過程中所對於受測本體1或黏著物件3所產生的熱脹冷縮的變形影響,並不容易造成黏著物件3脫落。反而因為在凹部11中,黏著物件3與受測本體1之間的熱應力作用更強,而使黏著物件3更為卡合於凹部11,而更有效地固定於受測本體1,並使溫度量測構件2之感應端21仍然緊密地熱接觸於受測本體1,以維持製程溫度的量測。 The sensing end 21 of the temperature measuring member 2 is in thermal contact with the body 1 to be tested by the fixing of the adhesive member 3, thereby measuring the temperature of the body 1 to be tested to further obtain the process temperature of the semiconductor. Moreover, the adhesive member 3 is adhered to the concave portion 11, so that the deformation of the thermal expansion and contraction caused by the tested body 1 or the adhesive member 3 during the heat treatment does not easily cause the adhesive member 3 to fall off. On the contrary, in the concave portion 11, the thermal stress between the adhesive member 3 and the body to be tested 1 is stronger, and the adhesive member 3 is more engaged with the concave portion 11, and is more effectively fixed to the body 1 to be tested, and The sensing end 21 of the temperature measuring member 2 is still in close thermal contact with the body 1 to be tested to maintain the measurement of the process temperature.

請同時參閱第2圖至第4圖所示,其係顯示本發之另一實施例之半導體製程溫度量測裝置100a,本實施例之半導體製程溫度量測裝置100a與半導體製程溫度量測裝置100大致相同,其差別在於:在本實施例中,受測本體1用於置放一半導體W,且受測本體1熱接觸於半導體W,受測本體1形成有一凹部11。在本實施例中,受測本體1係為一加熱盤。凹部11形成於受測本體1之下表面,而受測本體1之上表面係呈平整狀,而使得半導體W為緊密而均勻地熱接觸於受測本體1。 Please refer to FIG. 2 to FIG. 4 simultaneously, which shows a semiconductor process temperature measuring device 100a according to another embodiment of the present invention, a semiconductor process temperature measuring device 100a and a semiconductor process temperature measuring device according to the present embodiment. 100 is substantially the same, except that in the present embodiment, the body 1 to be tested is used for placing a semiconductor W, and the body to be tested 1 is in thermal contact with the semiconductor W, and the body 1 to be tested is formed with a recess 11. In this embodiment, the body 1 to be tested is a heating plate. The concave portion 11 is formed on the lower surface of the body 1 to be tested, and the upper surface of the body to be tested 1 is flat, so that the semiconductor W is in close and uniform thermal contact with the body 1 to be tested.

更佳地,在本實施例中,由於單一個黏著物件3為黏著於多數個凹部11,因此卡合的效果更強。而且黏著物件3凸起的高度高於相鄰於凹部11之凸部12的上表面,因此可以完整地包覆溫度量測構件2之感應端21,而使固定的效果更佳。當然, 本發明不限於此,單一個黏著物件3可只黏著於單一個凹部11,且溫度量測構件2之感應端21也可固定且熱接觸於半導體製程溫度量測裝置100c之受測本體1c之凹部11,如第6圖所示。 More preferably, in the present embodiment, since the single adhesive member 3 is adhered to the plurality of recesses 11, the effect of the engagement is stronger. Moreover, the height of the convex portion of the adhesive member 3 is higher than the upper surface of the convex portion 12 adjacent to the concave portion 11, so that the sensing end 21 of the temperature measuring member 2 can be completely covered, so that the fixing effect is better. of course, The invention is not limited thereto, and the single adhesive member 3 can be adhered to only one recess 11 and the sensing end 21 of the temperature measuring member 2 can also be fixed and thermally contacted with the tested body 1c of the semiconductor process temperature measuring device 100c. The recess 11 is as shown in Fig. 6.

請參閱第5圖所示,本發明之另一實施例之半導體製程溫度量測裝置100b與半導體製程溫度量測裝置100a大致相同,故相同的元件以相同的符號表示,其差別在於:在本實施例中,受測本體1b係為一加熱爐箱,半導體W為放置於受測本體1b之中,而凹部11形成於受測本體1b之內壁面,並使黏著物件3黏著於凹部11,且溫度量測構件2之感應端21固定接觸於受測本體1b之內壁面,藉此以獲得半導體W之製程溫度。 Referring to FIG. 5, the semiconductor process temperature measuring device 100b according to another embodiment of the present invention is substantially the same as the semiconductor process temperature measuring device 100a. Therefore, the same components are denoted by the same reference numerals, and the difference lies in: In the embodiment, the body to be tested 1b is a heating furnace box, the semiconductor W is placed in the body to be tested 1b, and the concave portion 11 is formed on the inner wall surface of the body to be tested 1b, and the adhesive member 3 is adhered to the concave portion 11, And the sensing end 21 of the temperature measuring member 2 is fixedly in contact with the inner wall surface of the body to be tested 1b, thereby obtaining the process temperature of the semiconductor W.

請參閱第7圖所示,本發明之再一實施例之半導體製程溫度量測裝置100d與半導體製程溫度量測裝置100大致相同,故相同的元件以相同的符號表示,其差別在於:在本實施例中,受測本體1d係為半導體,藉由使半導體形成有凹部11並使黏著物件3黏著於多數個凹部11的方式,使得溫度量測構件2之感應端21可以更穩固地接觸於半導體,而獲得半導體的溫度。 Referring to FIG. 7, the semiconductor process temperature measuring device 100d according to still another embodiment of the present invention is substantially the same as the semiconductor process temperature measuring device 100. Therefore, the same components are denoted by the same reference numerals, and the difference lies in: In the embodiment, the body to be tested 1d is a semiconductor, and the sensing end 21 of the temperature measuring member 2 can be more stably contacted by forming the semiconductor with the concave portion 11 and adhering the adhesive member 3 to the plurality of concave portions 11. Semiconductors, while obtaining the temperature of the semiconductor.

請參閱第8A至8F圖所示,凹部11之寬度在深度方向上可以為由等寬(第8A圖)、由寬漸窄(第8B圖)、或由窄漸寬(第8C圖)。或者,凹部11的表面也可為弧面(第8D、8E圖),或其他不規則形狀(第8F圖)等。請參閱第9A至9H圖所示,凹部11之形狀選自線形、圓形、同心狀、多邊形、放射狀、或其他不規則形狀所組成的群組之其中之一或多數個。藉此,可以根據不同的需求選擇凹部11的形狀。並且,凹部11可以為以雷射切割方式、蝕刻方式、或銑削方式所形成的凹部。 Referring to FIGS. 8A to 8F, the width of the concave portion 11 may be equal in width (Fig. 8A), narrower in width (Fig. 8B), or narrower in width (Fig. 8C) in the depth direction. Alternatively, the surface of the concave portion 11 may be a curved surface (Fig. 8D, 8E), or other irregular shape (Fig. 8F) or the like. Referring to Figures 9A through 9H, the shape of the recess 11 is selected from one or more of a group consisting of a line, a circle, a concentric, a polygon, a radial, or other irregular shape. Thereby, the shape of the recess 11 can be selected according to different needs. Further, the recess 11 may be a recess formed by a laser cutting method, an etching method, or a milling method.

請參閱第10A至10D圖,其係顯示本發明之各實施例的感應端的配置圖。本發明之溫度量測構件2之感應端21可以配置於受測本體1之中心處(第10A圖)、邊緣處(第10B圖)。或者,感應端21也可以配置沿著受測本體1之中心線L1、L2配 置(第10C圖),或是以陣列方式配置(第10D圖)。並且較佳地,調整每個感測端21之間的距離(如,距離D1、距離D2為相同),藉此可均勻地量測半導體之製程溫度。 Please refer to FIGS. 10A to 10D, which are configuration diagrams showing the sensing ends of the embodiments of the present invention. The sensing end 21 of the temperature measuring member 2 of the present invention can be disposed at the center (Fig. 10A) and the edge (Fig. 10B) of the body 1 to be tested. Alternatively, the sensing end 21 can also be configured along the center line L1, L2 of the body 1 to be tested. Set (Fig. 10C), or configured in an array (Fig. 10D). And preferably, the distance between each of the sensing terminals 21 (for example, the distance D1 and the distance D2 are the same), whereby the process temperature of the semiconductor can be uniformly measured.

以上之敘述僅為本發明之較佳實施例說明,凡精於此項技藝者當可依據上述之說明而作其它種種之改良,惟這些改變仍屬於本發明之發明精神及以下所界定之專利範圍中。 The above description is only for the preferred embodiment of the present invention, and those skilled in the art can make other improvements according to the above description, but these changes still belong to the inventive spirit of the present invention and the patents defined below. In the scope.

100‧‧‧半導體製程溫度量測裝置 100‧‧‧Semiconductor process temperature measuring device

1‧‧‧受測本體 1‧‧‧Measured ontology

11‧‧‧凹部 11‧‧‧ recess

2‧‧‧溫度量測構件 2‧‧‧Temperature measuring components

21‧‧‧感應端 21‧‧‧ Sensing end

3‧‧‧黏著物件 3‧‧‧Adhesive objects

4‧‧‧置物本體 4‧‧‧Store object

Claims (7)

一種半導體製程溫度量測裝置,用於量測一半導體之製程溫度,該半導體製程溫度量測裝置包含:一受測本體,該受測本體形成有一凹部;以及一溫度量測構件,該溫度量測構件之一感應端係連接且熱接觸於該受測本體,且該感應端由黏著於該凹部的一黏著物件所包覆,其中該受測本體係為該半導體或係為用於置放該半導體的一置物本體,且該置物本體經置放該半導體而熱接觸於該半導體。 A semiconductor process temperature measuring device for measuring a process temperature of a semiconductor, the semiconductor process temperature measuring device comprising: a body to be tested, the body to be tested is formed with a concave portion; and a temperature measuring member, the temperature amount One of the sensing members is connected to the sensing end and is in thermal contact with the body to be tested, and the sensing end is covered by an adhesive object adhered to the recess, wherein the system under test is the semiconductor or the system is used for placing a substrate body of the semiconductor, and the substrate body is in thermal contact with the semiconductor by placing the semiconductor. 如請求項1所述之半導體製程溫度量測裝置,其中該黏著物件係凸起於相鄰於該凹部之一凸部的上表面。 The semiconductor process temperature measuring device of claim 1, wherein the adhesive member protrudes from an upper surface adjacent to the convex portion of the recess. 如請求項1所述之半導體製程溫度量測裝置,其中該凹部之形狀係選自線形、圓形、同心狀、多邊形、放射狀所組成之群組之其中之一或多數個。 The semiconductor process temperature measuring device according to claim 1, wherein the shape of the concave portion is selected from one or a plurality of groups consisting of a linear shape, a circular shape, a concentric shape, a polygonal shape, and a radial shape. 如請求項1所述之半導體製程溫度量測裝置,其中該凹部之寬度在深度方向上係由窄漸寬、由寬漸窄、或等寬。 The semiconductor process temperature measuring device according to claim 1, wherein the width of the concave portion is narrowed in width, narrowed in width, or equal in width in the depth direction. 如請求項1所述之半導體製程溫度量測裝置,其中單一個該黏著物件係可黏著於一個以上之該凹部。 The semiconductor process temperature measuring device of claim 1, wherein a single one of the adhesive members is adhered to more than one of the recesses. 如請求項1所述之半導體製程溫度量測裝置,其中該凹部係形成於該受測本體之表面。 The semiconductor process temperature measuring device of claim 1, wherein the recess is formed on a surface of the body to be tested. 如請求項1所述之半導體製程溫度量測裝置,其中該凹部係為以雷射切割方式、蝕刻方式、或銑削方式所形成的凹部。 The semiconductor process temperature measuring device according to claim 1, wherein the recess is a recess formed by a laser cutting method, an etching method, or a milling method.
TW102125803A 2013-07-18 2013-07-18 Semiconductor process temperature measuring device TWI523136B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW102125803A TWI523136B (en) 2013-07-18 2013-07-18 Semiconductor process temperature measuring device
CN201310308482.2A CN104299925A (en) 2013-07-18 2013-07-22 Semiconductor process temperature measurement device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102125803A TWI523136B (en) 2013-07-18 2013-07-18 Semiconductor process temperature measuring device

Publications (2)

Publication Number Publication Date
TW201505114A TW201505114A (en) 2015-02-01
TWI523136B true TWI523136B (en) 2016-02-21

Family

ID=52319597

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102125803A TWI523136B (en) 2013-07-18 2013-07-18 Semiconductor process temperature measuring device

Country Status (2)

Country Link
CN (1) CN104299925A (en)
TW (1) TWI523136B (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2955930B1 (en) * 1998-05-29 1999-10-04 坂口電熱株式会社 Wafer having temperature detecting element
JP4062782B2 (en) * 1998-08-04 2008-03-19 山里産業株式会社 Plate-shaped body temperature measuring device and plate-shaped body recess forming method
KR20000033717A (en) * 1998-11-25 2000-06-15 김영환 Wafer for temperature sensor
JP3771795B2 (en) * 2000-11-28 2006-04-26 京セラ株式会社 Wafer heating device
TW558741B (en) * 2001-09-20 2003-10-21 Hamada Heavy Ind Ltd Temperature sensor and thermocouple for semiconductor processing apparatus
JP2005030792A (en) * 2003-07-08 2005-02-03 Okazaki Mfg Co Ltd Temperature measuring wafer
JP4332059B2 (en) * 2004-04-07 2009-09-16 京セラ株式会社 Wafer heating device
CN101325192B (en) * 2008-06-13 2010-08-04 友达光电(苏州)有限公司 Substrate easy to measure temperature and manufacturing method thereof
JP5476114B2 (en) * 2009-12-18 2014-04-23 東京エレクトロン株式会社 Temperature measuring device

Also Published As

Publication number Publication date
TW201505114A (en) 2015-02-01
CN104299925A (en) 2015-01-21

Similar Documents

Publication Publication Date Title
CN105358949B (en) For measuring the method and system of heat flux
TWI464815B (en) Inspection method of semiconductor device
US8256754B2 (en) Lift pin for substrate processing
JP5915026B2 (en) Plate for temperature measurement and temperature measurement apparatus provided with the same
US10236224B2 (en) Apparatus and method for reducing wafer warpage
JP4896963B2 (en) Wafer-shaped measuring apparatus and manufacturing method thereof
US20120249176A1 (en) Test structure and measurement method thereof
JP5756987B2 (en) Thermocouple for measuring surface temperature and surface temperature measuring device
CN109141686B (en) Thermal current sensor based on thermopile principle
TWI523136B (en) Semiconductor process temperature measuring device
TWI719103B (en) Wafer supporting structure and device for manufacturing semiconductor
JP2016139646A5 (en)
KR102948811B1 (en) Apparatus for temperature measurement and method of processing substrate
JP2004200156A (en) Metal heater
JP6381314B2 (en) Heat treatment furnace temperature measuring jig and manufacturing method thereof
JP6284400B2 (en) Semiconductor inspection equipment
TWI618218B (en) Semiconductor package structure
TWI741259B (en) Temperature measuring device and method for measuring a temperature
KR101971117B1 (en) Thermocouple wafer with micro well
TWM547180U (en) Thermal process temperature sensing device
CN223566587U (en) Heating platform
CN206740262U (en) Thermal Process Temperature Sensing Device
JP5500298B2 (en) Manufacturing method of temperature detection device
KR102221692B1 (en) Substrate treatment apparatus and substrate treatment method
TWI679728B (en) Method for adjusting a chip conveying apparatus and chip conveying apparatus