TW200839892A - Method of manufacturing multilayer thin film pattern and display device - Google Patents

Abstract

A method of manufacturing a multilayer thin film pattern includes forming a metal film over a substrate, forming a second thin film over the metal film, forming a resist pattern over the second thin film, etching the second thin film using the resist pattern as a mask, transforming the resist pattern using an organic solvent or a RELACS agent to cover an edge face of the etched second thin film and etching the metal film while the edge face of the second thin film is covered with the resist pattern.

Description

200839892 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing a multilayer film pattern and a display device. [Prior Art]

In the liquid crystal display device, a liquid crystal display device such as a transmissive type, a reflective type, or a semi-transmissive type is used (for example, Patent Document). The transmissive liquid crystal display device displays a backlight by arranging a backlight on the back surface thereof. In the reflective liquid crystal display device, image display is performed by arranging a reflecting plate on a substrate, and then reflecting the surrounding light by using the surface of the reflecting plate. To this end, the reflective liquid crystal display device includes a halogen electrode that reflects light, that is, a reflective halogen electrode. The half-transmissive liquid crystal display device transmits a part of the light and reflects the light-part. In the transflective liquid crystal display device, the tooth T transparent (attached ay) substrate has both a penetrating pixel electrode (penetrating electrode) and a reflective halogen electrode. In a transmissive liquid crystal display device, it is generally required that the pixel electrode of the TFT array substrate and the counter electrode of the color filter (5) Qr fUter substrate be transparent. Make 帛IT. The electro-optical film is used as an electrode material. For this reason, when the liquid crystal is driven by AC, the pixel electrode and the counter electrode can be applied to the liquid crystal under the same conditions: In a semi-transmissive liquid crystal display device, a metal film such as '...1 is used as a reflective pixel electrode (reflected electricity. For this reason, according to the working function of the transparent conductive film with the counter electrode 5 2185-9197-PF; Ahddub. 200839892 Poor, display flashing (fHcker) or liquid crystal imprinting by driving conditions. ° : Kyoko's flashing or branding countermeasures make the same material as the counter electrode on the gold genus of the reflective electrode. The technique of the transparent conductive film is disclosed in Patent Documents 2 and 3. In Patent Document 3, the same mask pattern (4 Pattern) is used, and the metal film and the reflective electrode of the reflective electrode are formed by the same contact liquid. The transparent conductive film is subjected to a general wet residual process (a custom-made turtle (10) process. Thereby, a reflective electrode and a transparent conductive film having the same pattern shape as the reflective electrode are formed. Further, the half-transmissive liquid crystal display device is used. At the same time, both the steps of forming the penetrating electrode and the step of forming the reflecting electrode are used. For this reason, in the semi-transmissive liquid crystal display device, the fish is penetrating - the tooth-toothing liquid 1 day device or the reflection type In the liquid crystal display device, the UTJ la, ..., phase plate step is increased. In order to reduce the number of photolithography steps, the technique for making the 胛 phase system and the order version It is disclosed in Patent Document 4. In Patent Document 4, orange field, Ύ using a gray-tone or half-tone (half tone) exposure technique, you stop, _ τ makes the film thickness of the first resistance (photosensitive resin) pattern In the case of the photoresist pattern having the difference in film thickness, the formation of the through electrode and the reflective electrode can be carried out by using the photo-imaging step of the photographic plate. [Patent Document 1] [Patent Document 2] [Patent Document 3] [Patent Document 4] 曰本特开平1 1 - 1 0 1 992 pp. Japanese Patent Laid-Open No. 20 0 3-25 5378 曰本特开 2005-275323号Bulletin 5277 2185-9197-PF; Ahddub 6 200839892 [Invention However, the subject of the invention is to solve the problem. However, in the case of the general wet-etched metal film and the induced conductive film formed thereon, the transparent conductive film is made by the method of the patent female g 驮3. The end face of the metal film is stretched, and the residual edge is overhang. The g-graph is in the half-transmissive liquid crystal display device of the patent document 3, showing the ITT array substrate mold w < I A partial cross-sectional view of the k step. In the figure, it is formed on the TFT (耒R 彳 U U 禾 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Further, in the interlayer insulating ruthenium, a film forming and patterning is performed in the first pass. In the figure, the film is formed as a metal ruthenium in the form of the transparent conductive film 2 of the eighth (b). 3. Next, n "money is used as the reflective transparent conductive film 4. Further, in the second transparent conductive 臈:: the desired shape of light_the case 5. The light (4) case 5 is used as a mask, as shown in the figure" For the metal film 3 and the second transparent guide (C) ^ ancient, 丨廿 4 1 : 4 collectively tempering. Thereafter, when the photoresist is removed, the 茱 5 蚪 is formed as shown in the figure (4) By the above method, the second transparent conductive film 4 which is formed on the upper layer of the multilayer film pattern is formed into a lower layer shape, so that the case end is more protruded. In particular, when used; It is easy to occur such a d 4 special J Le Z transparent conductive film ~ Di 9 shows the second transparent conductive film * and Jin Dazhan. Part of the expansion of the wet etching process. The generalization is to carry out the remaining moments in the vertical and horizontal directions. That is to say, in the remainder, the 'system is in the second transparent conductive 2185-9197-PF; Ahddub 7 .200839892 the film 4 and the metal film 3 While the direction is being performed, it is also performed in a direction perpendicular to the film thickness (side etch). By this side etching, as shown in FIG. A gap 6 is formed between the etching surface 7 of the metal film 3 and the surface of the photoresist pattern 5 during etching. Further, since the etching is performed from the gap 6, the shape of the protrusion is easily formed. Further, generally In other words, the etching rate of the metal film 3 is faster than that of the second transparent conductive film 4, so that the metal film 3 is more easily etched than the second transparent conductive film 4. Therefore, the second transparent conductive film 4 is stretched. It is formed into abrupt shape. Μ In this way, when abrupt is formed on the end surface of the multilayer film, the step of rubbing the substrate in a subsequent rubbing step or the like is performed to make the abrupt The part is peeled off, causing the foreign matter to occur. Furthermore, the fragment caused by the peeled film may cause a short between adjacent halogens or between the halogen electrode and the counter electrode. In the case where the end face of the multilayer film pattern is covered with the coating film, the short film is formed in the protruding portion of the coating film. The coating film is a protective insulating film. In the case of cutting off, it will cause In the case where the coating film is a conductive film, electrical contact failure may occur in the place where the film is cut. In the future, when the display device is highly refined, the size of the pixel or the adjacent 昼 is made. In addition, in the case of the patent document 4, the formation of the penetrating electrode and the reflecting electrode is performed using a photoresist pattern having a film thickness difference. The film portion having a photoresist pattern having a film thickness difference is removed by ashing. In the ashing, it is usually treated with oxygen 2l85~9197-PF; Ahddub 8 200839892 Plasma. However, in the method of Patent Document 4, ashing occurs in a state where the transparent V electrical film is exposed on the surface, so that a different discharge occurs. By abnormal discharge, not only the transparent conductive film, but also the interlayer insulating film placed underneath 5 may cause damage. It also causes problems such as disconnection caused by wiring placed in the lower layer. The present invention has been invented in order to solve the above problems,

It is an object of this invention to provide a multilayer film pattern of a pattern of a desired shape and a method of manufacturing a display device. Means for Solving the Problem A method for producing a multi-thin pattern according to the present invention includes forming a first thin film on a substrate (for example, the metal film 3 in the embodiment) on the ith film. a second film (for example, the second transparent conductive film 4 of the second embodiment); a second film: a step of: a photomask as the mask, and (4) a second photo: / Using an organic solvent to deform the photoresist pattern, and covering the first film in the ΐ = state. : In the manufacture of the multilayer film pattern of the present invention, the first layer is formed on the substrate! a step of forming a film 丄 臈 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL REL a method of using a post-etched end face; and a method of manufacturing a multilayer film pattern of the present invention in the state of using light and then "the end face of the film 2, 2185-9197-PF/Ahddub 9 200839892" a step of forming an interlayer insulating film on the substrate; a step of forming a conductive thin film on the interlayer insulating film, and forming a film of one or more layers on the conductive film, a step, and then returning one layer or more On the film, by a plurality of stages of exposure, a step of forming a photoresist pattern having a film thickness difference; and using a film having a difference in film thickness as a mask, a step of etching the one or more thin films and the conductive thin layer to expose the interlayer insulating film; ashing the photoresist pattern having the difference in film thickness, and removing the thin film of the photoresist pattern to remove the foregoing Thin film part The photoresist pattern is a mask, and the step of etching at least the i layer of the film of one or more layers is etched. Advantageous Effects of Invention According to the present invention, it is possible to provide a multilayer film pattern and a display device capable of easily obtaining a pattern of a desired shape. [Embodiment] One hundred first, the display device according to the present invention is shown in Fig. 1. Fig. 1 is a front view showing the structure of an electrode substrate used in a liquid crystal display device. Although the display device is described by taking a liquid crystal display device as an example, it is possible to use a flat-line display device such as an organic EL display device (for example, a line port 4/丨; I ^士1一,,, 九/, 疋例); The entire structure of the liquid crystal display device is common to the first to sixth embodiments described below. The liquid crystal display device of the present invention has an electrode. In the electrode substrate 1, a display area u and a bezel area 12 disposed to surround the display collar 2l85~9197-PF; Ahddub 10 200839892 domain 11 are provided. In the display field 11, a formation is formed. The plurality of scanning signal lines 1 3 and the plurality of lines display the signal line 1 4. The plurality of scanning signal lines 1 3 are arranged in parallel. Similarly, the plurality of display signal lines 13 are arranged in parallel. The scanning signal line 13 and the display are displayed. The signal lines 14 are formed to intersect each other. The scanning signal line 13 and the display signal line 14 are perpendicularly intersected. Further, the field surrounded by the scanning signal line 13 and the display signal line 14 is configured as a pixel 17. Therefore, in the electrode substrate 1 画, the pixels 17 are arranged in a matrix shape. Thus, the electrode substrate 1 is a TFT array substrate. Further, in the frame region 12 of the electrode substrate 1 The scanning signal driving circuit 15 and the display signal driving circuit 16 are provided. The scanning signal line 13 is extended from the display area U to the frame area 12. Further, the scanning signal line 13 is connected to the scanning signal driving circuit 15 at the end of the electrode substrate 10. Furthermore, the display signal line 14 is also the same, and is extended from the display area η to the frame area 12 . The end of the substrate 10 is adjacent to the display of the t-number driving circuit 15, and; furthermore, the known signal line 14 is attached to the electrode.

2185-9197-pF; Ahddub 11 200839892 f displays the data and supplies the display signal to the display signal line 14. Thereby, the display voltage corresponding to the displayed data can be supplied to each element i 7. Further, the scanning signal driving circuit 15 and the display signal driving circuit 16 are not limited to the configuration disposed on the electrode substrate. For example, Tcp (film package) can be used to connect the drive circuit. In the halogen element 17, at least i TFTs 2 are formed. An interlayer insulating film is formed on the TFT2. The TFT 20 is disposed near the intersection of the display signal line 14 and the scanning signal line 13. The 17120 and the halogen 17 are connected to each other via a contact hole 〇!11:%1:}1〇16) provided on the interlayer insulating film. For example, the TFT 20 is supplied with a display voltage to the halogen electrode. That is, the TFT 20 of the switching element is turned "on" by the scanning signal from the scanning signal line 13. Thereby, the display voltage line 14 is applied to the halogen electrode connected to the drain electrode of the TFT 20, and the electric field corresponding to the display voltage is generated between the pixel electrode and the counter electrode. Further, on the surface of the electrode substrate 10, an alignment film (not shown) is formed. Here, the structure of the halogen 17 will be described in detail using Fig. 2 . Here, an example of a display device according to the present invention, that is, a cell structure of a transflective liquid crystal display device will be described. Fig. 2(a) is a plan view showing a pixel structure of the transflective liquid crystal display device of the present invention. The second (b) diagram is a sectional view of the eight (4) in the second (&) diagram. Further, in the second (a) diagram, only the halogen structure on the side of the electrode substrate 1 is described. In the second (b) diagram, the cross-sectional view of the A_A of the electrode substrate 记载 is described, and the cross-sectional structure of the opposite substrate side of the A-A cross section of the electrode substrate 1 is also described. 2185-9197-PF; Ahddub 12 200839892 In Fig. 2, although the case of using a channel-etch type reverse laminated TFT is shown as an example, it is not limited thereto. For example, an etch-stopper type or a top-gate type TFT may be used. In Fig. 2, a plurality of scanning signal lines (gate wiring lines) 13 are formed in the longitudinal direction. A plurality of display signal lines (source (s〇urce) wirings) 14 are formed in the lateral direction. The field surrounded by the adjacent scanning signal line 13 and the display signal line 14 is configured as a pixel 17. The scanning signal line 13, the gate electrode 62, and the common capacitor electrode 63 are formed on the substrate 61 of the electrode substrate 1 by the same layer. The substrate η is a transparent insulating substrate such as glass or plastic. In the outer side of the TFT 20, the scanning signal line 13 and the gate electrode 62 are connected to each other. The gate insulating film 64 is formed so as to cover the gate electrode 62, the scanning signal line 13, and the common capacitor electrode 63. On the gate insulating film 64, a semiconductor layer 65 of the TFT 20 is formed. The φ semiconductor layer 65 is disposed near the intersection of the scanning signal line 13 and the display signal line 14. Specifically, the semiconductor layer 65 is provided on the opposite side of the gate electrode 62 via the gate insulating film 64. The semiconductor layer 65 is composed of an i layer (essential non-crystalline semiconductor layer) 65a and an n layer (n-type amorphous semiconductor layer) 65b. The first layer 65a is provided on the gate insulating film 64 and has approximately the same size as the gate electrode 62. The n layer 65b is disposed on the soil layer 65& The n layer 65b corresponding to the source electrode 66 and the drain electrode 67 to be described later is removed by back channel etching. That is, the η layer 65b is formed between the source electrode 66 and the soil layer 65& and 2185-9197-PF; Ahddub 13 200839892 > and the electrode 6 7 and the i layer 65 5 a. Further, a source electrode 66 and a drain electrode 67 which are respectively connected to the n-layer 65b of the semiconductor layer 65 are provided on the gate insulating film 64. The source electrode 66 is connected to the display signal line 14 in the outer side of the TFT 20. The drain electrode 67 extends toward the common capacitor electrode 63. The portion of the drain electrode that faces the common capacitor electrode 63 has a function as a capacitor electrode for forming an additional capacitor of each of the pixels. The capacitor electrode and the common capacitor electrode 63 disposed opposite to each other via the gate insulating film 64 constitute a storage capacitor. Therefore, the gate insulating film on the common capacitor electrode 63 "has a function as a capacitor of a storage capacitor". The common capacitor electrode 63 is disposed between adjacent scanning signal lines 13. In the case of the pixels 33, the common capacitor electrodes 63 are connected to each other to form a common-coil grid. In the book, the #1, s', and the current-valley wiring are formed in a wide state: Capacitor electrode 63. The common capacitor wiring is changed from the towel 5: the portion where the line 14 is not crossed, the parasitic capacitance is made small, and the common capacitor wiring system is formed in parallel with the scanning signal line 13. Covering the source electrode 6.6, and the % y inter-j insulating film (10). In the form of the reed m, 'the interlayer insulation is formed. The penetration = the layer electrode 101 on the layer of the organic planarization film; the two contact film 1. The contact hole 69 of 68 is formed in the hunting hole 69, and the book of the strike, un+upper is 7n " and is connected to the electrode of the drain electrode 67. The electrode is 7昼, In the field of reflection 8, the formation of μ彳# ° in the tooth-transparent field and the 7-different 1 transparent guide The film 2 is further shaped into the metal film 3 on the transparent electrode 2 of the -electrode.μ ^ , π 隹 1 1 in the reflection field 8 of the book 电 电 电 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 小 小 小 小 小 小 金属 金属 金属Dan, the middle of the metal film 3 set part of the structure 2185 - 9197, Gu Kai 14 200839892 1 : 9 "member domain 8. The pixels 17 other than the reflection field 8 are configured to be penetrating. The metal film 3 is disposed on the common capacitor (10). That is to say, in the reflection field 8, a storage capacitor is disposed under the metal film 3. Although it is absent on the metal film 3, iv, the electric film 4,": 1 cascading the second transparent guide 1 2(b) is not shown in the figure.

On the surface of the electrode substrate 10, an alignment "72" is formed so as to cover the halogen electrode 7'. Further, in the reflection region 8, in order to enhance the display characteristics of the reflection mode mode, the unevenness 胄7 is provided in the uneven portion η, and a concave-convex pattern is formed on the surface of the interlayer insulating film 1. Furthermore, in the unevenness 71, it follows the interlayer insulating film! The uneven pattern is formed such that the metal film 3 formed thereon is formed into irregularities. Further, in the electrode electrode 10, the counter electrode 50 is disposed to face each other. Counter electrode 5. For example, it is a color filter substrate, and it is arrange|positioned on the viewing side. A color filter 53, a black matrix (bm) 52, a counter electrode 54, an alignment film 72, and the like are formed in the counter electrode 5G. Specifically, a surface such as a pigment or a yellow metal is formed on a surface facing the opposite surface of the electrode substrate 1 of the substrate 51, and is covered with > ', :, color matrix 52. The black matrix 52 is disposed in a field opposed to the scanning signal lines 、3, , , 7, and the signal line 14. Further, a color filter 53 composed of a pigment or a dye is formed so as to be buried between the black matrixes 5 2 . The color filter 53 is disposed opposite to the halogen electrode 7A. The color filter 53 is, for example, a colored layer of R (red), G (green), or B (blue). Further, the counter electrode 54 is formed on approximately the entire display area u in such a manner as to cover the ":, color matrix 52 and color filter 53. Also on the surface of the counter electrode 54, 2185~9197-PF; Ahddub 15 200839892 layer & alignment film 72. Further, the counter electrode 54 is also disposed on the electrode substrate j 〇 side. Further, the liquid crystal layer 73 is held between the electrode substrate 1A and the counter substrate 5A. That is, liquid crystal is injected between the electrode substrate and the counter substrate 5A. Further, a polarizing plate, a phase difference plate, and the like are provided on the outer surfaces of the electrode substrate 10 and the counter substrate 5Q. Further, a backlight unit (baciii ight uni t) or the like is disposed on the opposite side of the liquid crystal display device. The liquid is driven by the electric field between the pixel electrode 70 and the counter electrode 54. That is, the liquid crystal alignment direction between the substrates is changed. Thereby, the polarization state of the light passing through the liquid crystal layer 73 is changed. In other words, the liquid crystal layer 73 changes the polarization of the light which is linearly polarized by the polarizing plate. Specifically, the light from the backlight unit is linearly polarized by the polarizing plate on the electrode substrate 10 side. Further, the polarization state is changed by passing the linearly polarized light through the liquid crystal layer 73. Therefore, the amount of light passing through the counter substrate 5Q side is changed by the polarized state. That is, in the penetrating light passing through the liquid crystal display panel from the backlight unit, the amount of light passing through the polarizing plate on the viewing side is changed. The alignment direction of the liquid crystal changes by the applied display voltage. Therefore, by controlling the display voltage, it is possible to change the light passing through the polarizing plate on the viewing side. That is to say, by changing the display voltage for each pixel, the desired image can be displayed. Embodiment 1. Next, a method of manufacturing the multilayer film pattern of the first embodiment will be described with reference to Fig. 3. Fig. 3 is a cross-sectional view showing the manufacturing steps of the multilayer film pattern of the form 1 of the present invention regarding the mode 2185-9197-PF; Ahddub 16 200839892. In the present embodiment, the method of manufacturing the reflective electrode and the penetrating electrode in the halogen electrode of the transflective liquid crystal display device is described as a suitable example of the multi-I thin film pattern and the display device, but is not limited thereto. Various multilayer thin film patterns and display devices can be formed by variously changing the film forming the multi-layer film. σ

First, in the third drawing similar to Fig. 8, as shown in Fig. 2, an interlayer insulating film i such as an organic flattening is formed on the upper portion of the TFT 2Q, the scanning signal line 13, and the display signal line 14. In Fig. 3, the lower side of the interlayer film 1 is omitted. In the 3rd (a) figure, the interlayer insulating film! Then, the first transparent conductive film 2, the metal film 3 constituting the reflective electrode, and the second transparent conductive film 4 for preventing the road mark are laminated in this order. Metal film 3 genus = for example, A! or alloy A1, which is mainly composed of A1, "the second transparent conductive film 4 is used in the electroforming film 2, and the second transparent conductive film or the like: a transparent conductive film. The planar shape of the photoresist pattern 5, 'Li (four) phase plate formation is expected to be in the brother 3 (b) diagram, the cover μ 4, to the inside of the photoresist pattern 5. In the == Ming conductive film Wet (four) and so on. At this time, according to the side:: using the second transparent conductivity of the 5 end face, the pre-resistance pattern reaches the side surface of the metal film 3 to be described later _^; The amount 41 reaches the metal film. ", the side will be the second, by the machine: 2:: = object. (rei! OH, the photoresist FR (resist) m ^ 2185 ~ 9197-PF; Ahddub reclamation 2, the method of 200839892 of the side wall of the transparent conductive film 4, the deformed photoresist pattern 5. For example, by exposing the photoresist pattern 5 to an organic solvent environment at a low temperature of 2 〇 to 35 ° t, it can be short The photoresist pattern 5 is deformed to be large during the time. Thereby, as shown in Fig. 3(c), the entire second transparent conductive film 4 is protected by the resist pattern t 5 . Department disclosed in SID digest 〇6 Page 165〇~ recent newspaper L 1: a s Kido et al reflow technique of using chemical techniques reticle 4 is formed on the A14 LCD panel.

Thereafter, in the third (4) diagram, the metal film 3 is imprinted with a selective equipotential name. For example, wet etching can be used. Since even if the metal film 3 remains a little bit, it will have an adverse effect on the product properties. Therefore, for the metal film 3., it is necessary to perform sufficient Geveretching. For this reason, the temple measured the error of the surname or the in-plane homogeneity, and performed a stenciling process equivalent to about 2 times the film thickness of the metal film 3. At this time, according to the side surname, the metal film 3 is removed from the end surface of the photoresist pattern 5 (the side amount is _ times the degree. That is, the metal film 3 is retracted by 31 and the brother 2 is transparently conductive. The amount of retreat 41 of the film 4 is smaller. Therefore, in the month of the treatment, the second transparent conductive film * is not outputted, so that it is possible to prevent the protrusion of the second-phase conductive film 4 according to the second and the second (four). In the same manner as in the third (c), the photoresist pattern 5 is covered with the photoresist pattern 5 to block the photoresist pattern 5 by using the return pattern. Thus, as shown in the third (e) The second transparent conductive film 4 and the metal film 3 are again deformed by the first resist pattern 5, and the first transparent conductive core is separated from the first transparent conductive core. The retreat of the conductive film 2 is 2l85-9l97~pF; Ahddub 18 200839892 ϊ 21 is less than the amount of the metal film 3 having a smaller amount of retreat 31, and the etching of the transparent conductive film 2 is performed. 3 曰田弟1 transparent guide

The end surface of the electric film 2 is protruded to prevent the occurrence of abrupt. here,. Use, for example, wet etching. After X$, when the photoresist pattern 5 is removed, a multilayer film pattern in which no abrupt occurrence occurs as shown in Fig. 3 (£) is obtained. As described above, in the present embodiment, the photoresist pattern 5 is used as a mask, and the second transparent conductive film * formed under it is anisotropically etched. At this time, the selective afterglow is performed until the amount of retreat 41 of the second transparent conductive film & is twice or more the film thickness of the metal film 3. Further, the resist pattern 5 is deformed so as to cover the second transparent conductive film 4 by using a photoresist backflow using an organic solvent. Thereafter, the remaining portion is formed on the second transparent film 3 under the electroconductive film 4. By forming the second transparent conductive film 4 and the metal film 3 by using the pattern of one photoresist pattern 5, the second transparent conductive film 4 is prevented from protruding from the end surface of the metal film 3, and the occurrence of sudden occurrence can be prevented. . Further, pattern formation of two or more layers of the thin film pattern can be performed using the one photoresist pattern 5. The photoresist pattern 5 can be largely deformed in a short time by using a photoresist reflow using an organic solvent. Further, in the present embodiment, after the etching of the metal film 3, it is desired to reflow the photoresist of the solvent of the feeder again to deform the photoresist pattern 5 so as to cover the side walls of the gold (10) 3 . Further, in order to make the amount of retreat 21 of the i-th transparent conductive film 2 smaller than the amount of retreat 31 of the metal phase 3, it is formed on the underside of the metal film 3; Transparent conductive film 2. Thereby, the first transparent conductive film 2 is prevented from protruding from the end surface of the metal film 3, and patterning of the multilayer film pattern of 2185-9197-PF; Ahddub 19 200839892 layer or more can be prevented. Therefore, a multilayer film pattern to the desired cross-sectional shape is obtained. Embodiment 2. A sudden occurrence occurs. In other words, by the deformation and reversal of the photoresist pattern 5 which is reflowed by the photoresist using the organic solvent, in the pattern formation of the multilayer film pattern of three or more layers using the photoresist pattern 5, the occurrence of the jam can be prevented. In other words, the multilayer film pattern can be formed into a stage shape. In particular, when the ratio of the first transparent conductive film 2 and the second transparent conductive film 4 is 1/2 or more and less than 2, and preferably lower than 2, it is suitable for this case. Implementation form. It is also possible to use a photoresist pattern 5 for 3

It can be easily obtained. Next, a method of manufacturing the multilayer film pattern of the second embodiment will be described. In the present embodiment, the method of deforming the photoresist pattern 5 is the same as that of the first embodiment, and the description of the other manufacturing steps is the same as that of the first embodiment, and the description thereof is omitted. After etching the second transparent conductive film 4, in FIG. 3(c), the photoresist pattern is expanded by RELACS (Chemical Micro-Assisted Resolution Enhancement Photolithography) to make the photoresist pattern t 5 The entire transparent conductive film is covered so as to cover the entire surface of the photoresist pattern. Specifically, the RELACS material is applied and heated on the photoresist pattern 5. Thereby, the oxygen component in the photoresist pattern 5 is diffused. a bridging reaction with the RELACS material. That is, the RELACS material in the vicinity of the photoresist pattern 5 is changed to 'attach to the surface of the photoresist pattern 5, and a thermosetting resin layer is formed. Thereafter, the unlaced portion of the relacs is formed. The material is removed by development, cleaning, etc., thereby adhering to the side wall of the second transparent conductive film 4, by attaching two cs 2185-9197-PF to the photoresist pattern 5; Ahddub 20 200839892 material ' The photoresist pattern 5 is entirely enlarged. Although the thermal temperature applied to the RELACS material is 1 〇〇 to the extent of the film, the thickness of the film attached to the photoresist pattern 5 can be controlled by adjusting the temperature. 0. 5~um degree resist pattern 5 Since the film thickness of the second transparent conductive film 4 is 〇〇〇5 to 〇.〇", the entire second transparent conductive film 4 can be protected by the photoresist pattern 5 and the material adhered thereto. . For the photoresist deformation using the core (10) material, it is disclosed in L je _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Contact hole patterning method. Also in the same manner as in the third (e) diagram, the entire photoresist pattern 5 is deformed so as to cover the side walls of the metal film 3 with the photoresist pattern 5 in accordance with the enlargement of the photoresist size of the RELACS. As described above, in the present embodiment, after the residual treatment of the second transparent conductive film 4, the photoresist pattern 5 is deformed by the size of the photoresist of the REUCS. In the same manner as in the embodiment i, the second transparent conductive film 4 is not subjected to the end surface of the metal film 3 in the patterning process of the second transparent conductive film 4 and the metal film 3 by using one photoresist pattern 5. Prominent, and can prevent the occurrence of sudden Zhan. Further, pattern formation of two or more layers of the thin film pattern can be performed using the photoresist pattern 5. Therefore, a multilayer film pattern having a desired cross-sectional shape can be easily obtained. In the present embodiment, after the last name of the metal film 3 is read, the photoresist size of the root (4) LACS is expanded again, and the photoresist pattern 5 is deformed so as to cover the side walls of the metal film 3. Further, _ is formed under the metal film 3 2185-9197-PF; Ahddub 21 200839892 2 of the first transparent conductive film 2. Thereby, the same as the embodiment, the first conductive film 2 is prevented from protruding from the end surface of the metal film 3, and U can be prevented from occurring. In other words, the same effect as in the first embodiment can be achieved by the deformation and repetitiveness of the photoresist pattern 5 which is enlarged according to the resist size of the relacs, and the pattern of the multilayer film pattern of three or more layers is performed using one photoresist pattern 5. In the formation, it can prevent the occurrence of stagnation. In particular, when the ratio of the button selection of the first transparent conductive film 2 and the second transparent conductive film 4 is "2 or more, and less than 2' is preferable, it is applied to the present embodiment. . Further, a photoresist pattern 5 can be used for patterning of a multilayer film pattern of three or more layers. Embodiment 3. The manufacture of the multilayer film pattern of the present embodiment 3 will be described with reference to Fig. 4. In the method of manufacturing a dendrite electrode of a transflective liquid crystal display device, a technique of using a gray dimmer or a plurality of stages of exposure is used in the formation of the toothed electrode and the reflective electrode. By exposing the number again (using the photolithography of the plurality of stages of exposure), it is possible to simultaneously form a photoresist pattern having a thick film thickness in the reflective field and a thin film thickness in the field of penetration. The photoresist pattern 31. The through-electrode and the reflective electrode are formed by the difference in film thickness of the photoresist ☆ pattern 5. In the present embodiment, when the plurality of by-electrodes are used, the second aspect of the invention is: The formation of the through electrode and the reverse use will be described. Fig. 4 is a cross-sectional view showing the manufacturing process of the multilayer thin film pattern of the third embodiment. 4, the same as the 3rd figure, 2185-9197-PF; Ahddub 22 200839892, the structure w: the same symbol is attached to the part, and the difference is explained. First, the fourth figure I of (4) is the second As shown in the figure, an organic planarization film is formed, and an interlayer insulating film 1 is formed on the TFT 20, the scanning signal line 13, and the display.

, 1 upper part of the tiger line 14. In Fig. 4, the description of the interlayer insulating film j is omitted. In the fourth layer (a), on the interlayer insulating film 1, the transparent conductive film 2, the metal film 3 constituting the reflective electrode, and the second transparent conductive layer for blocking the printing are sequentially disposed. Membrane 4. Further, from the top of the second transparent conductive film 4, a desired planar light T pattern 5 is formed by photolithography. Here, a gray dimming cover or the like is used so that the film thickness of the photoresist pattern 5a in the reflection collar is higher than that of the photoresist pattern 5b penetrating the field 9. The thick film portion of the photoresist pattern 5 having a film thickness difference is the photoresist pattern 5a, and the thin film portion is the photoresist pattern 5b. Next, in the f 4 (b) towel, the transparent conductive film 4, the metal film 3, and the i-th transparent conductive film 2 are collectively etched. Alternatively, the individual (four) ... transparent conductive film 4, metal film 3, and the first transparent conductive film 2 are also

In the case of -, the patterning of the shape of the photoresist pattern 5 is sequentially performed by the upper reed using a contact engraving liquid which selectively etches each layer. B. Further, as shown in FIG. 4(c), the photoresist pattern 5 is removed in the field 9 of the halogen electrode, and remains only in the reflection field 8, and the photoresist pattern 5 is pasted. Ashing. For example, ashing is carried out in oxygen polymerization. The surface of the second transparent conductive film 4 in the penetration region is exposed. The photoresist is removed, and the photoresist pattern 5e is formed so as to cover the shape of the reflective region 8. The photoresist (4) 5b of the thin film portion is removed, and the thick film portion is removed. Although a (four) thin 'but remains as a photoresist pattern 5c. By: 2185-9l97-PF; Ahddub 23 200839892, after the photoresist pattern 5e is turned on, the sidewall of the isotropic film 4 is retracted. Its 4. The second transparent conductive film 4 is formed by using the '& The surname is engraved. Then, the amount of retreat of the second transparent conductive film 4 of the crucible is as follows. The amount of retreat of the metal film 3, which will be described later, reaches the metal film guanamine plant. Here, the etching of the first φ electrical film 4 is performed as a target by making the transparency of 2 to be about 2 times or more. Its - people, and implementation! In the same way, by means of reflow, there is a light-resistance of the nucleus... 丨 2 The pattern of the side wall of the transparent conductive film 4 is a deformed photoresist pattern. m ^ r , 9 brother 4 (e) shows the second transparent conductive film η $ Λ and moxibustion using the photoresist 5C. At this time, the metal film 3 is transparent, and the side of the electric film 2, the rut, and the straw are exposed by the photoresist pattern 5, but exposed. Thereafter, in the 4th (f) figure, the metal film 3 is selected from the selective and special purpose money. For example, wet etching can be used. At this time, since the metal film 3 does not leave a little bit even if the metal film 3 remains, the metal film 3 must be sufficiently over-etched. For this reason, the etching error or the in-plane sentence property is considered to be 1 ± 2, and the processing is performed in a manner equivalent to about 15 to 2 times the film thickness of the metal film 3. Thereby, the amount of retreat of the metal film 3 from the end surface of the resist pattern 5c (side amount of money) 3 2 is about 2 times that of the film thickness of the metal film 3 of 1 R 0 _. That is, the amount of retreat 32 of the metal film 3 is made smaller than the amount of retreat 42 of the second transparent conductive film 4 before. Therefore, in the etching process of the metal film 3, the lower surface of the second transparent conductive film 4 is not exposed, and the field path does not occur according to the second through 2185-9197-PF; Ahddub 24 200839892 V electricality The abruptness of the membrane 4. Finally, when the photoresist pattern 5c is removed, as described above, no film of φ is obtained, and the film g can be opened to form a multilayer film pattern. That is to say, the multilayer film is formed into a stage shape. s 丄 丄 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用

I::: For preventing the imprinting of the conductive film: and the IS 42 is equal to or more than twice the film thickness of the metal film 3 constituting the reflective electrode, the selectivity (4) is performed. Furthermore, by using the photoresist of the organic solvent, the photoresist pattern t 5e is deformed to cover the sidewall of the second transparent conductive film 4, and then the metal film 3 is etched, thereby using a photoresist pattern. In the patterning of the second transparent conductive film 4 and the metal film 3, the second transparent conductive film 4 does not protrude from the end surface of the metal film 3, and the occurrence of the occurrence of the crack can be prevented. Therefore, the multilayer film pattern 1' having a desired cross-sectional shape can be easily obtained, and the photoresist pattern 5c can be largely deformed in a short time by using a photoresist reflow using an organic solvent. In the present embodiment, in the step of deforming the resist pattern 5c, the case where the photoresist is reflowed using the organic solvent and the deformed photoresist pattern 5c is exemplarily described, but the present invention is not limited thereto. Similarly to the second embodiment, the photoresist pattern 5c can be deformed by expanding the size of the photoresist. Thereby, the same effect as in the third embodiment can be obtained, and in the formation of the multilayer film pattern using one resist pattern 5c, the occurrence of abrupt can be prevented. Embodiment 4. 2185-9197-PF; Ahddub 25 200839892 A method for producing a multilayer film pattern according to the fourth embodiment will be described with reference to Fig. 5. In the present embodiment, in the same manner as in the third embodiment, when the through electrode and the reflective electrode are formed by photolithography using the plurality of stages of exposure, another application example of the method for producing the multilayer film pattern to which the present invention is applied is displayed. . In the present embodiment, a part of the steps are different from the third embodiment, and the other steps are the same as those of the third embodiment, and the description thereof is omitted. In other words, in the fourth embodiment, a method different from that of the third embodiment is used in the step corresponding to the fourth (b) diagram of the third aspect. Fig. 5 is a cross-sectional view showing the manufacturing steps of the multilayer film pattern of the fourth embodiment in a mode. First, in the fifth drawing similar to Fig. 4, as shown in Fig. 2, an interlayer insulating film i such as an organic planarizing film is formed on the TFT 20, the scanning signal line 13, and the upper portion of the display signal line 14 In the figure, the lower portion of the interlayer insulating film j is omitted. In the 帛5(a) diagram, the first transparent conductive film 2, the metal film 3 constituting the reflective electrode, and the brother 2 for preventing the imprint are sequentially laminated on the interlayer insulating film 1J1 in the same manner as in the fourth U). Transparent conductive film 4. Further, ^^#, 4 is further formed thereon by photolithography to form a desired planar image of the photoresist pattern 5 of the ten-sided shape. By using the gray dimmer 荨, the film thickness of the θ in the reflection field 8 is thicker than the photoresist pattern 5b of the penetrating field 9b, and the V-type is formed. Resistive pattern 5. Secondly, in the 5th (b) figure, Fan jl #. (2) The selective transparent isotropic etching of the transparent conductive film 4 is performed. For example, the 仃 仃 图 R R wall wet etching. Here, the amount of retreat 43 of the transparent film φ & Q of the photovoltaic film 4 from the end face of the light-resistance is set to be equal to or greater than the amount of retreat of the metal film 3 to be described later. For example, the amount of the retreat 43 is equal to the square of the metal film 2l85-9197-PF; and the thickness of the Ahddub 26 200839892 3 is about twice or more as the target. Thereby, the side of the second transparent conductive film 4 is covered by the light-resistance of the organic solvent and the pattern 5 of the second transparent conductive film 4 by the use of the photoresist of the organic solvent, except that the portion of the V-electricity 膑4 is the same as the outer yoke (4). Thereby, as shown in Fig. 5(c), the entirety of the electroconductive film 4 is defined by a pattern of a deformed photoresist. The resist pattern 5 protects the second pass, and then in the 苐5(d) diagram, the stomach + k > and the selective tetragonal etching of the metal film 3 are selected. For example, wet etching can be used. Mm^ λ , 9 Ρ Ρ 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃>,. In the subsequent step of the metal film 3, the photoresist is again applied to cover the entirety of the side film 3 of the metal film 3 by using an organic photoresist reflow. Further, the m transparent conductive medium 4 and the gold ® are further subjected to the surname treatment of the transparent conductive film 2 of the younger brother. Here, the second amount of the back-off amount 23 of the end face of the photoresist pattern 5 is made smaller than the amount of the metal film 3 of the gas film 2 which is less than 33. In the step of the fifth (4), after the metal film 3 is left, the pattern of the first transparent conductive film 2 is not changed, and the pattern 5 is deformed so as to cover the side wall of the metal film 3. Performing light... moxibustion into the lamp brother - 1 疋 + 仃 仃 仃 仃 图案 图案 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The dry etching may be performed by dry etching or the like. 2l85~9197-PF; Ahddub 27 200839892 The upper film end surface is formed to be lower than the lower film end surface: the inner pattern is formed so that the upper film is not formed. The shape that will be prominent. After that, the steps after the 5th (e) diagram are the same as those of the 4th (c) to (4) form 3. The clock is the clock, and the 丄Ά '疋, in the 5th (e) In the ashing resist pattern 5: 吏', the second transparent conductive film 4 of the penetrating field 9 is exposed. Further, as shown in the figure 5 (1) to (8), the second transparent conductive film is performed. And the last name of the metal film 3: When the photoresist pattern 5c is removed, as shown in Fig. 5(1), the multilayer film is formed in a multi-layered pattern, that is, the layer film pattern is formed in a multi-stage shape. In the present embodiment, the side wall of the second transparent conductive film 4 of the upper layer can be deformed by the resist pattern even in the step corresponding to the embodiment 4 (the step of _). After the name of the transparent film 4 is carried out, the case of the underlayer film (4) is performed on the side wall of the transparent conductive film 4, and the shape of the film can be more reliably suppressed by the photoresist pattern 5. Therefore, it is possible to obtain a multilayer film pattern having a desired cross-sectional shape more: = conduction, and "= 2 of the transparent conductive film 4, which is lower than 1 degree. In the present embodiment, in the step of deforming the resist pattern 5 in the form of the Bays, in the step of deforming the resist pattern 5, although it is applied to the use of τ, you can use the line backflow of the line, and the deformation ^ 2: the same: ^ ° The first resistance pattern 5 is deformed by expanding the photoresist size according to RELACS. The shape "the same effect: in 2185-9197^PF; Ahddub (9) 200839892 in the formation of a multilayer film pattern using a photoresist pattern 5, the occurrence of the protrusion layer can be prevented. Embodiment 5. The multilayer film of the fifth embodiment The method for producing a pattern will be described with reference to Fig. 6. This embodiment is the same as the third and fourth embodiments, and when a through-electrode and a reflective electrode are formed by photolithography using a plurality of stages of exposure, Another application example of the method of manufacturing a multilayer film pattern is shown.

Fig. 6 is a cross-sectional view showing the manufacturing steps of the multilayer film pattern of the fifth embodiment in a mode. In the sixth drawing, the same reference numerals are given to the same structural portions in the fourth and fifth figures, and the differences will be described. In the sixth drawing which is the same as the fourth and fifth figures, as shown in FIG. 2, an interlayer insulating film such as an organic planarizing film is formed on the TFT 2, the scanning signal line 13, and the display signal line 14. Upper part. In Fig. 6, the lower portion of the interlayer insulating film 1 is omitted. In the present embodiment, in the sixth insulating layer, the interlayer insulating film 1 Λ is sequentially laminated to form the i-th V-electrode film 2 penetrating the f-pole and the metal film constituting the reflective electrode. 3. Further, on the metal film 3, a photoresist pattern 5 of a desired planar shape is formed by photolithography. Here, a plurality of stages of exposure techniques are used to form a green (4) 5a (four) thicker in the reflective region 8 than the photoresist pattern of the penetrating field 9 is thicker. Thereby, a photoresist pattern having a film thickness difference is formed on the metal film 3. Next, in the sixth (b) diagram, the photoresist pattern 5 is used as a mask, and the metal film 3 and the transparent conductive film are engraved. 2. At this time, since abnormal discharge in the ashing described later is to be prevented, (4) until the ith transparent conduction, with 2. In other words, 2l85-9197-PF; Ahddub 29 200839892 'in the field where the photoresist pattern 5 is not provided, In the exposed manner, the metal film 3 is removed: the β-insulating film 1 .. Shou also removes the brother 1 to read the Japanese y y 10 film 2. Here, the material film 2 can be used, or the overall transparency can be The conductive film 3 and the flute 1, "... can also be engraved. In the etching process of the integrated metal crucible 3 and the transparent conductive film 2, the number of steps is increased, so that the productivity can be improved, and the transparent film 2 of the metal film 3 can be formed only in the optical film. . ^ The method of the following 5 is further illustrated, as shown in Figure 6(c), so that the photoresist pattern 5: is removed from the field 9 'only remains in the reflective body ^ : 仃 first resistance (four) 5 Ashing. The plasma treatment is carried out in an oxygen atmosphere for ashing. At this time, in the present embodiment, the 帛1 transparent conductive film 2 is not exposed on the surface. In other words, at the beginning of the ash, make the first! The entirety of the transparent film 2 is covered under the photoresist pattern 5, and it is possible to prevent an abnormal discharge or the like in the ashing. When the photoresist is removed in such a manner that the surface of the metal film is exposed in the field of penetration, the photoresist pattern 5 is formed to cover the shape of the reflective field 8. Thereby, the photoresist pattern 5b of the thin film portion is removed to a thick film. Although the photoresist pattern 5a of the ruthenium is thinned, it remains as the photoresist pattern 5e. By this ashing, the photoresist pattern 5c is retracted from the side wall of the metal film 3. Then, the metal film 3 is selectively etched by using the photoresist pattern 5c as a mask. Thereby, the metal film 3 penetrating the field 9 is removed. Finally, when the photoresist pattern 5c is removed, a staged multilayer film pattern as shown in Fig. 6(d) can be obtained. As shown above, in the present embodiment, the through electrode and the reflective electrode were formed by photolithography using a plurality of stages 2185-9197 to PF; Ahddub 30 200839892 exposure. Before the ashing of the photoresist pattern 5 having a film thickness difference is performed, the interlayer insulating film 1 is exposed so as to be removed until the second transparent conductive film 2 is removed. According to such a method, it is possible to prevent an unfavorable situation such as occurrence of abnormal discharge during ashing, and to easily obtain a multilayer film pattern of a desired shape. Further, it is possible to form a pattern in the field of the penetrating electrode and the field of the reflecting electrode by the 1-man's makeup phase plate making step, thereby improving productivity. - Further, in the present embodiment, Embodiments 1 to 4 can be combined. Specifically, in the case where the brother 6 (b) is in the form of the respective metal film 3 and the first transparent conductive film 2, the following may be carried out. The photoresist pattern 5 having a film thickness difference is used as the last name of the metal film 3. Further, the photoresist pattern 5 is deformed by the photoresist reflow using an organic solvent or by the expansion of the photoresist size of the RELACS so that the photoresist pattern 5 covers the side of the metal film 3. /, I, the first transparent conductive mountain - the pancreas 2, at this time, the back of the first transparent conductive film 2 from the end face of the photoresist pattern 5 is retracted from the metal film 3 In a lesser way, the first transparent guide is used to force the film 2 to remain. In this way, the sudden occurrence can also be prevented. 〜 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The case is exemplarily described, but is not limited thereto. In the conductive film on the seven-edge film 1 between the layers y W s , a multilayer search pattern in which, for example, an insulating film is laminated may be formed. Embodiment 6. The method for producing a multilayer film pattern of the sixth embodiment will be described with reference to Fig. 7. The present embodiment is the same as the embodiment 3 to 5, by 31 2185-9197-PF; Ahddub 200839892 is formed by using a plurality of stages of photolithography to form a penetrating electrode and a reflective electrode, and is applicable to the present invention. Another application example of the method of manufacturing a multilayer film pattern is shown. Fig. 7 is a cross-sectional view showing the manufacturing steps of the multilayer film of the present embodiment in a mode. In the seventh embodiment, the same components are denoted by the same reference numerals in the fourth to sixth embodiments, and the differences will be described. First, in the same Fig. 7 to Fig. 4 to Fig. 6, as shown in Fig. 2, an interlayer insulating film i such as an organic flattening film is formed on the upper portion of the TFT 20, the scanning signal line 13, and the display signal line 14. In Fig. 7, the lower portion of the interlayer insulating film 1 is omitted. In the present embodiment, the first transparent conductive film 2 constituting the penetrating electrode and the metal film 3 constituting the reflective electrode are laminated on the interlayer insulating film 1 in order to prevent The second transparent conductive film 4 is imprinted. Further, on the second transparent conductive film 4, a photoresist pattern 5 having a desired planar shape is formed by photolithography. Using a plurality of stage exposure techniques, the film thickness of the photoresist pattern h formed in the reflection field 8 is thicker than that of the photoresist pattern 5b penetrating the field 9. Thereby, the photoresist pattern 5 having a film thickness difference is formed on the metal film & In the figure 7(b), the photoresist pattern 5 is used as a mask, and the transparent conductive film 4, the metal film 3, and the transparent conductive film 2 are named. This: The temple is to prevent the abnormal discharge of the ashing order described later. 1 The transparent conductive film 2. In other words, in the collar in which the photoresist pattern 5 is not provided, the interlayer insulating film j is also formed in the film 4, and the second transparent conductivity is removed, and the metal film 3 is removed. Sex film 2. Here, the second transparent conductive film 4, the metal film 3, and the 2l85-9197-PF; Ahddub 32 200839892: = Γ may be sequentially engraved, or may be integrated. When the conductive film 4, the metal film 3, and the first transparent conductive film of the system 2 are used, the number of steps can be reduced, thereby improving productivity. In this case, the second transparent conductive film 4 and the metal film 3 : the electric film 2 are left only on the underside of the photoresist pattern 5 .

* Further, as shown in FIG. 7(c), in order to cause the photoresist pattern 5 to be removed in the tooth-permeable field 9 of the pixel electrode and to remain only in the reflective field 8, the photoresist pattern 5 is pasted. Ashing. Plasma treatment is carried out in an oxygen atmosphere for ashing. At this time, in the present embodiment, the metal film 3 and the first! The transparent guide film 2 is not exposed at the surface. In other words, when the ashing starts, the entire first transparent conductive film 2 is covered under the photoresist pattern 5, and it is possible to prevent an abnormal discharge such as ashing from being unfavorable. When the photoresist is removed in such a manner that the surface of the second transparent conductive film 4 is exposed in the penetration direction, the photoresist pattern 5c is configured to cover the shape of the reflection region 8. The photoresist pattern f 5b of the portion is removed, and the photoresist pattern of the thick film portion is changed: 'but the portion remains as the photoresist pattern 5c. By this ashing, the photoresist pattern 5C is retracted from the side wall of the 帛2 transparent conductive film 4. Thereafter, the photoresist pattern 帛5c is used as a mask to selectively etch the permeable film 2 and the metal film 3. Thereby, the second transparent "electrical film 4" and the metal film 3 penetrating (four) 9 are removed. Finally, when the photoresist pattern 〜 is removed, a staged multilayer film pattern as shown in Fig. 7(d) can be obtained. As described above, in the present embodiment, # is formed by photolithography using a plurality of stages of exposure to form an f-transmissive electrode and a reflective electrode. Before the ashing of the photoresist pattern 5 having a film thickness of 2185-9197-PF and Ahddub 33 200839892, in order to expose the interlayer insulation, the insects are etched until the first transparent guide ray, and Film 2 was removed afterwards. According to such a method, in the ashing, it is possible to prevent an abnormal discharge such as an abnormality of the mound, and to obtain a multilayer film pattern of a desired shape in a simple manner. Further, it is possible to form a pattern in the field of the penetrating electrode and the field of the reflective electrode by the 1-man's & phase-making step, thereby improving productivity. - Further, in the present embodiment, the embodiments 〜4 can be combined. Specifically, after ashing is performed in the drawing of the seventh embodiment (c), the method of the fourth (4) to the fourth (4) of the third embodiment can be used instead of the seventh (4) drawing, and the fourth transparent conductive film 4 and the metal film 3 can be used. . Further, after forming the photoresist pattern $ having a film thickness difference in Fig. 7(a), the second transparent conductive film 4 may be etched by using the method of Figs. 5(b) to 5(4) of the fourth embodiment instead of the seventh (8). The metal film 3 and the second transparent conductive film 2. In this way, it is further possible to prevent the occurrence of stagnation. In the present embodiment, the case where the multilayer thin film pattern including the i-th transparent conductive film 2, the metal film 3, and the second transparent conductive film (layer) conductive film is sequentially laminated is exemplarily described. To explain, it is not limited to ^匕. In other words, it is also possible to form a multilayer film pattern of four or more layers on the conductive film on the interlayer insulating film i. The film of two or more layers formed on the conductive film may be an insulating film. In the first to sixth embodiments, the single-screen rabbit in which the metal film 3 is *M or an alloy mainly composed of yttrium is used for the case where the I + 4 is taken and the early layer is not described, but is not limited thereto. Two or more types of films may be laminated. For example, a structure in which an Ag or a metal such as the main material is laminated on a film made of Cr, w, Ti, or an alloy mainly composed of such a material is used as the metal film 2185. -9197-PF; Ahddub 34 .200839892 Yes. The use of 胄AhAg' or an alloy based thereon as the main material for the upper layer side of the metal film 3 can enhance the optical characteristics of reflection and the like. Further, by using mw, Ti, or an alloy having such a main material as the main material, the electrical connection to the first transparent conductive film 2 formed on the lower portion of the metal film 3 can be improved by using the lower layer side of the metal film 3. Hungarian raising the unevenness on the interlayer insulating film 1 is formed. The unevenness of the first insulating film 1 is not shown.

In the present embodiment, a suitable example of the multilayer film pattern and the display device is described as a method of manufacturing the reflective electrode and the penetrating electrode in the halogen electrode of the transflective liquid crystal display device. However, the present invention is not limited thereto. Hunting is performed by various modifications to the film forming the multilayer film to form various multi-layer film patterns and display devices. For example, a metal film including a source electrode and a electrodeless electrode forming m, and a multilayer film formed of a conductive film formed of <itq or the like may be included. Also, using a combination of organic

In Fig. 7, the photoresist reflow of the layer and the expansion of the photoresist according to RELACS are also acceptable. That is to say 'the first! The photoresist pattern 5' is reflowed by the use of an organic solvent, and the deformed photoresist pattern 5' is expanded for the second time by the resist size of the REUCS. On the other hand, the photoresist pattern 5 can be deformed by the photoresist of the RELACS by expanding the resistive pattern 5 according to the resistivity of the RELACS by using the photoresist of the organic solvent. The above description is for explaining the embodiments of the present invention, but the present invention is not limited to the above embodiments. Further, in the case of the same person (4), in the scope of the present invention, the above elements of 2185-9l97-PF and Ahddub 35 200839892 can be easily changed, added, and converted. [Simple description of the drawing] Fig. 1 is a structural diagram showing the present board. The electrode base of the display device of the month #2(a) to 2(b) is a plan view and a cross-sectional view showing the structure of the semiconductor device of the semi-period: liquid crystal display device of the present invention.

Fig. 3(a) to Fig. 3(g) are diagrams showing the manufacturing steps of the pattern of the film of the first embodiment in the case where the pattern is not shown. Figs. 4(a) to 4(g) are diagrams showing the steps of manufacturing the pattern of the thin film of the third embodiment. ♦ Figures 5(4) to 5(1) are diagrams showing the manufacturing steps of the pattern of the thin film of the fourth embodiment. Fig. 6(a) to Fig. 6(d) are diagrams showing the manufacturing steps of the mode display M--, V, and the film of the fifth embodiment. Figs. 7(a) to 7(4) are diagrams showing the manufacturing steps of the multilayer thin film pattern in the embodiment. Fig. 8(a) to Fig. 8(d) are diagrams showing the manufacturing steps of the pattern of the film, and the shoulders are not related to the conventional technique.

Fig. 9 is a partial enlarged view showing the progress of the multilayer film pattern of the prior art. X 1st transparent conductive film; 36 [Description of main components] 1~ interlayer insulating film; 2185-9197-PF; Ahddub 200839892 4~ 2nd transparent conductive film; 6~ gap; 8~reflection field; Electrode substrate; 12~frame field; 14~ display signal line; 16~ display signal drive circuit 18, 1 9~ eve section wiring; 5 0~ opposite substrate; 5 2~ black matrix; 54~ counter electrode; 6 2 ~ gate electrode; 64~ gate insulating film; 6 5 a~i layer; 6 6~ source electrode; 68~ interlayer insulating film; 7 0~ pixel electrode; 72~ alignment film; 3~ metal film; , 5a, 5b, 5c ~ photoresist pattern; 7 ~ surname engraved surface; 9 ~ penetration field; 11 ~ display field; 1 3 ~ scan signal line; 1 5 ~ scan signal drive circuit; 17 ~ pixel;

20~TFT; 51~substrate; 53~color filter; 61~substrate; 6 3~common capacitor electrode; 65~semiconductor layer; 65b~n layer; 6 7~dip electrode; 69~contact hole; 71~ Concave and convex portion; 73 to liquid crystal layer; 21, 23, 31, 32, 33, 41, 42, 43 to back amount. 2185-9197-PF; Ahddub 37

Claims (1)

200839892 X. Patent Application Range: 1. A method for manufacturing a multilayer film pattern, comprising: a step of forming a first film on a substrate; a step of forming a second film on the first film of uranium; Forming a resist pattern on the film 2; a step of etching the second film by using a photoresist pattern as a mask; and using an organic solvent or a RELACS material to deform the photoresist pattern to cover a step of etching the rear end surface of the second film; and a step of etching the first film in a state where the end surface of the second film is covered by the photoresist pattern. 2. The method of producing a multilayer film pattern according to the invention of claim i, wherein the __ material is heated to react with the photoresist pattern to form a resin layer on the surface of the photoresist pattern. 3. The method for producing a multilayer film pattern according to claim 1, wherein in the step of etching the second film, the second step of etching, the second step is performed by etching the surface of the photoresist pattern The film has a back-off amount of the film of the above-mentioned 筮^, ^, u from the end face of the photoresist pattern which is twice or more than the film thickness of the film of the above-mentioned film. 4. The method for manufacturing a thin film pattern according to the patent application scope, wherein the method further comprises: using an organic solvent or R Α Γ ς 44· ί , uRELACS #m彡, 4 (1) rear end face of the film Step; and 38 2185-9197-PF/Ahddub.200839892 The end surface is covered with the third under the light 1 film, and is etched in the state of the first film and the second film resist pattern. step. For example, in the method of manufacturing a multilayer film pattern of the fourth invention, the second film in the step of etching the third film, the surface selection ratio of the second film to the third film is 1/. 2 or more, less than 2. 6. If the patent application scope is ^ ^ 之 之 之 layer film pattern manufacturer In the step of etching the first film (4), the first film is etched so as to be removed from the surface of the photoresist pattern, and the film is separated from the end surface of the photoresist pattern. The amount of retreat of the first film is not less than the film thickness of the third film, and is not more than the amount of retreat of the film of the second film. 7. The method for producing a enamel film pattern of the sixth section of the patent application range, wherein the third film barrier is etched, and the third film is described as the third surface of the photoresist pattern. The film is below. Junli is a method for the removal of the first film. The film of the multilayer film pattern of the seventh paragraph of the patent scope is: the film of the second film is a metal film containing A1, the second thin medium... thick film It is a transparent conductive film. 9. The method for forming the photoresist pattern in the manufacturing method of the 溥 甘 甘 项 之 如 如 , , , , , , , , , , , , , , , , , , , , , Forming steps •, '膘; poor photoresist pattern, and = (4) before the thickness of the silk pattern, (4) the step of the film portion of the pattern; 4 especially and 2185-9197_Pp; Ahddub 39 .200839892 In the step of the ninth 罘2 film, the photoresist pattern is a reticle, and the second film is etched by removing the film portion. I 〇 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如Exposing the manufacturing section of the ruthenium film pattern before formation, +, and 1 to form a photoresist pattern having a film F i in a step of squeezing the second film by a plurality of steps The step photoresist pattern is a photomask, and the etching is performed to have a difference in film thickness. After the photoresist pattern of the difference in thickness, /* ashing has the above-mentioned film 卞 to remove the film portion, and the light-shielding, #resistance pattern is used as a mask, etched & ', and the photo-etching of the thin film portion is described The film of the second aspect of the invention is as follows: wherein, the step further comprises: the step of manufacturing the film pattern on the substrate and the ith film; and the step of forming the interlayer insulating film by s 7 Before the ashing step, J Μ has a thick mask, and (4) the first resist pattern of the second film is a step of exposing the insulating film. Thereafter, the interlayer 12 is as described in the Patent Application No. , the manufacturing method of the core pattern, ν is included in the step of the substrate and the first @ interlayer insulating film, and the film is formed between the film in the step of etching the second film. The photoresist pattern having a thickness difference is a photomask: the first interlayer film is exposed, and the interlayer insulating film is exposed. The method for producing a multilayer thin film pattern has a method of forming an interlayer insulating film on a substrate. Steps; 2l85-9197-PF; Ahddub 40 .200839892 The step of forming a conductive film on the interlayer insulating film; forming a step of a film of a layer or more on the conductive film described in the above paragraph, and: on the film above the layer, by a plurality of stages Exposing a step of forming a photoresist pattern having a film thickness difference; and using the photoresist pattern having the difference in film thickness as a mask, etching the ruthenium layer, the film, and the 'electric film' to form the interlayer insulating film a step of exposing; a step of ashing the photoresist pattern having the difference in film thickness to remove the thin film portion of the photoresist pattern; and removing the photoresist pattern of the thin film portion as a mask, leaving the film of the above ι layer or more Steps in at least 1 layer. A manufacturing method of a display device is a method of manufacturing a multilayer film pattern according to any one of claims 1 to 13. 41 2185-9197-PF; Ahddub