SG11202109293XA - Large area metrology and process control for anisotropic chemical etching - Google Patents

Large area metrology and process control for anisotropic chemical etching

Info

Publication number
SG11202109293XA
SG11202109293XA SG11202109293XA SG11202109293XA SG11202109293XA SG 11202109293X A SG11202109293X A SG 11202109293XA SG 11202109293X A SG11202109293X A SG 11202109293XA SG 11202109293X A SG11202109293X A SG 11202109293XA SG 11202109293X A SG11202109293X A SG 11202109293XA
Authority
SG
Singapore
Prior art keywords
process control
large area
chemical etching
anisotropic chemical
metrology
Prior art date
Application number
SG11202109293XA
Inventor
Sidlgata V Sreenivasan
Akhila Mallavarapu
John G Ekerdt
Michelle A Grigas
Ziam Ghaznavi
Paras Ajay
Original Assignee
Univ Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Texas filed Critical Univ Texas
Publication of SG11202109293XA publication Critical patent/SG11202109293XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/056—Making the transistor the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/403—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials for lift-off processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Sampling And Sample Adjustment (AREA)
  • ing And Chemical Polishing (AREA)
SG11202109293XA 2019-02-25 2020-02-24 Large area metrology and process control for anisotropic chemical etching SG11202109293XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962810070P 2019-02-25 2019-02-25
PCT/US2020/019543 WO2020176425A1 (en) 2019-02-25 2020-02-24 Large area metrology and process control for anisotropic chemical etching

Publications (1)

Publication Number Publication Date
SG11202109293XA true SG11202109293XA (en) 2021-09-29

Family

ID=72238704

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202109293XA SG11202109293XA (en) 2019-02-25 2020-02-24 Large area metrology and process control for anisotropic chemical etching

Country Status (7)

Country Link
US (1) US20220139717A1 (en)
EP (1) EP3931863A4 (en)
JP (1) JP7553458B2 (en)
KR (2) KR20250128384A (en)
SG (1) SG11202109293XA (en)
TW (2) TWI759693B (en)
WO (1) WO2020176425A1 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240165480A (en) 2018-12-20 2024-11-22 램 리써치 코포레이션 Dry Development of Resists
TWI869221B (en) 2019-06-26 2025-01-01 美商蘭姆研究公司 Photoresist development with halide chemistries
EP3780070A1 (en) * 2019-08-14 2021-02-17 Paul Scherrer Institut System and etching method for fabricating photonic device elements
EP4651192A3 (en) 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
KR102601038B1 (en) 2020-07-07 2023-11-09 램 리써치 코포레이션 Integrated dry processes for patterning radiation photoresist patterning
US12094691B2 (en) * 2020-09-30 2024-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Etch apparatus for compensating shifted overlayers
WO2022094350A1 (en) * 2020-10-29 2022-05-05 Board Of Regents, The University Of Texas System Equipment and process technologies for catalyst influenced chemical etching
CN115598943A (en) 2020-11-13 2023-01-13 朗姆研究公司（Us） Processing tool for dry removal of photoresist
KR102870727B1 (en) * 2020-12-07 2025-10-16 삼성전자주식회사 Semiconductor device
KR20250142946A (en) 2020-12-08 2025-09-30 램 리써치 코포레이션 Photoresist development with organic vapor
JP7787894B2 (en) * 2021-01-21 2025-12-17 ラム リサーチ コーポレーション Profile optimization of high aspect ratio memories using etch-front metal catalysts
US20220301887A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Ruthenium etching process
WO2022216727A1 (en) * 2021-04-05 2022-10-13 The Board of Trustees of the Leland Stanford Junior University Office of the General Counsel Ultrahigh aspect ratio nanoporous and nanotextured microstructures with exceptionally high surface area prepared using nanopore-mediated metal-assisted chemical etching
CN114229787B (en) * 2022-02-23 2022-07-08 绍兴中芯集成电路制造股份有限公司 Method and structure for improving defect of silicon column of deep silicon etching wafer and semiconductor device
CN114671622B (en) * 2022-03-09 2024-07-26 许昌恒昊光学科技有限公司 Glass etching solution with rock-simulated bedding staggered stacking effect and glass manufacturing process
WO2023196493A1 (en) * 2022-04-07 2023-10-12 Board Of Regents, The University Of Texas System Tool and processes for electrochemical etching
KR102619817B1 (en) * 2022-05-19 2024-01-02 세메스 주식회사 Method of forming semiconductor device and substrate processing system for forming semiconductor device
EP4548160A1 (en) 2022-07-01 2025-05-07 LAM Research Corporation Cyclic development of metal oxide based photoresist for etch stop deterrence
CN115360496B (en) * 2022-08-30 2023-09-29 合肥工业大学 Preparation method of terahertz height difference cavity device based on metal-assisted chemical etching
CN115424953B (en) * 2022-09-21 2025-05-02 浙江大学 A method and device for detecting thickness of subsurface damaged layer of wide bandgap semiconductor
KR102808277B1 (en) * 2022-09-26 2025-05-15 세메스 주식회사 Method of forming semiconductor device and substrate processing system for forming semiconductor device
US12057320B2 (en) 2022-10-03 2024-08-06 RASIRO, Inc. Hydrogen peroxide plasma etch of ashable hard mask
JP2026507921A (en) * 2023-03-08 2026-03-06 ボード オブ リージェンツ，ザ ユニバーシティ オブ テキサス システム Integrated micro- and nanoscale metal-assisted chemical etch process with uniform and clean etch front
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
US20240404832A1 (en) * 2023-06-02 2024-12-05 Taiwan Semiconductor Manufacturing Company Ltd Wet tool kit for forming semiconductor structure and cmos image sensor employing same
US20250323057A1 (en) * 2023-08-30 2025-10-16 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum in aqueous solution
US20250104996A1 (en) * 2023-09-22 2025-03-27 Mattiq, Inc. Tunable electron transparent substrates for high-resolution characterization
WO2025249178A1 (en) * 2024-05-29 2025-12-04 東京エレクトロン株式会社 Substrate processing method
JP2026032489A (en) * 2024-08-13 2026-02-26 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP2026036720A (en) * 2024-08-21 2026-03-06 東京エレクトロン株式会社 Recess structure forming method
JP7811689B1 (en) * 2024-10-09 2026-02-05 花王株式会社 Etching solution composition

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246991A (en) * 1985-08-21 1987-02-28 Hitachi Ltd Melt convection control method for single crystal growth equipment
JPH07302896A (en) * 1994-04-28 1995-11-14 Ngk Insulators Ltd Semiconductor device and manufacturing method thereof
US6065481A (en) * 1997-03-26 2000-05-23 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced HF etch process performance
US6569775B1 (en) * 1999-03-30 2003-05-27 Applied Materials, Inc. Method for enhancing plasma processing performance
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
JP2004327561A (en) * 2003-04-22 2004-11-18 Ebara Corp Substrate processing method and substrate processing apparatus
US20050148198A1 (en) * 2004-01-05 2005-07-07 Technion Research & Development Foundation Ltd. Texturing a semiconductor material using negative potential dissolution (NPD)
JP5039939B2 (en) * 2006-01-24 2012-10-03 国立大学法人大阪大学 Surface processing method and apparatus
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7927469B2 (en) * 2006-08-25 2011-04-19 Semitool, Inc. Electro-chemical processor
US7444198B2 (en) * 2006-12-15 2008-10-28 Applied Materials, Inc. Determining physical property of substrate
US8734661B2 (en) * 2007-10-15 2014-05-27 Ebara Corporation Flattening method and flattening apparatus
US8278191B2 (en) * 2009-03-31 2012-10-02 Georgia Tech Research Corporation Methods and systems for metal-assisted chemical etching of substrates
US8951430B2 (en) * 2012-04-18 2015-02-10 The Board Of Trustees Of The University Of Illinois Metal assisted chemical etching to produce III-V semiconductor nanostructures
US9230815B2 (en) * 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten
WO2014152435A1 (en) 2013-03-14 2014-09-25 The Board Of Trustees Of The Leland Stanford Junior University High aspect ratio dense pattern-programmable nanostructures utilizing metal assisted chemical etching
US9580809B2 (en) * 2014-01-16 2017-02-28 The United States Of America, As Represented By The Secretary Of Commerce Article with gradient property and processes for selective etching
KR102120687B1 (en) * 2014-04-18 2020-06-09 가부시키가이샤 에바라 세이사꾸쇼 Substrate processing device, substrate processing system, and substrate processing method
US9595470B2 (en) * 2014-05-09 2017-03-14 Lam Research Corporation Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor
JP6444805B2 (en) * 2015-05-12 2018-12-26 株式会社東芝 Manufacturing method of semiconductor chip
JP6510348B2 (en) * 2015-07-23 2019-05-08 株式会社荏原製作所 Substrate processing apparatus, substrate processing system, and substrate processing method
US10134599B2 (en) * 2016-02-24 2018-11-20 The Board Of Trustees Of The University Of Illinois Self-anchored catalyst metal-assisted chemical etching
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
JP6710089B2 (en) * 2016-04-04 2020-06-17 東京エレクトロン株式会社 Method for forming tungsten film
JP2017222928A (en) * 2016-05-31 2017-12-21 東京エレクトロン株式会社 Selective accumulation by surface treatment
JP6737666B2 (en) * 2016-09-12 2020-08-12 株式会社Ｓｃｒｅｅｎホールディングス Sacrificial film forming method, substrate processing method, and substrate processing apparatus
US10347497B2 (en) * 2016-09-23 2019-07-09 The Board Of Trustees Of The University Of Illinois Catalyst-assisted chemical etching with a vapor-phase etchant
SG11202005030XA (en) * 2017-11-28 2020-06-29 Univ Texas Catalyst influenced pattern transfer technology

Also Published As

Publication number Publication date
TW202105559A (en) 2021-02-01
KR102846785B1 (en) 2025-08-14
KR20250128384A (en) 2025-08-27
WO2020176425A1 (en) 2020-09-03
EP3931863A1 (en) 2022-01-05
TWI815315B (en) 2023-09-11
TWI759693B (en) 2022-04-01
JP7553458B2 (en) 2024-09-18
EP3931863A4 (en) 2023-04-26
TW202226423A (en) 2022-07-01
US20220139717A1 (en) 2022-05-05
KR20210142118A (en) 2021-11-24
JP2022523520A (en) 2022-04-25

Similar Documents

Publication Publication Date Title
SG11202109293XA (en) Large area metrology and process control for anisotropic chemical etching
IL279273B (en) Metrology and process control for semiconductor manufacturing
IL265743B (en) Metrology systems and methods for process control
IL273680A (en) Metrology system and method for determining a characteristic of one or more structures on a substrate
IL263766A (en) Method of measuring a target, substrate, metrology apparatus, and lithographic apparatus
KR102723916B9 (en) Etching method
ZA201900510B (en) A blockchain-implemented control method and system for controlling an external process or system
IL265764A (en) Method of inspecting a substrate, metrology apparatus, and lithographic system
IL258057B (en) Metrology method and apparatus, computer program and lithographic system
IL255051B (en) Metrology method and apparatus, computer program and lithographic system
GB201620746D0 (en) An apparatus and method for controlling a haptic actuator
EP3324135A4 (en) Multi-split system and control method for electronic expansion valve thereof
IL259564B (en) Metrology target, method and apparatus, computer program and lithographic system
IL253621A0 (en) Metrology method and apparatus, computer program and lithographic system
SG10201700932TA (en) Water discharge system, water discharge method, water discharge control apparatus, water discharge control method, substrate processing apparatus and water discharge control program
EP3230712A4 (en) Systems and methods for predicting and controlling the properties of a chemical species during a time-dependent process
SG11201912232WA (en) Etching method and plasma etching material
EP3488329A4 (en) Touch substrate, mask plate for fabricating the same, and fabricating method thereof
SG10201904699RA (en) Wafer processing method
EP3524136A4 (en) Microscope apparatus and control method
SG10201909279TA (en) Wafer processing method
SG10201906930VA (en) Etching method and etching apparatus
SG11202004968SA (en) Plasma etching method and plasma etching apparatus
SG10201904719TA (en) Wafer processing method
SG10202008685UA (en) Etching apparatus and etching method