SG11201405091TA - Polishing agent, polishing agent set, and substrate polishing method - Google Patents
Polishing agent, polishing agent set, and substrate polishing methodInfo
- Publication number
- SG11201405091TA SG11201405091TA SG11201405091TA SG11201405091TA SG11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA SG 11201405091T A SG11201405091T A SG 11201405091TA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- polishing agent
- substrate
- agent
- agent set
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012035432 | 2012-02-21 | ||
| PCT/JP2013/053559 WO2013125446A1 (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201405091TA true SG11201405091TA (en) | 2014-09-26 |
Family
ID=49005633
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201606827RA SG10201606827RA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
| SG11201405091TA SG11201405091TA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201606827RA SG10201606827RA (en) | 2012-02-21 | 2013-02-14 | Polishing agent, polishing agent set, and substrate polishing method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10557058B2 (en) |
| JP (1) | JP6044630B2 (en) |
| KR (1) | KR102005132B1 (en) |
| CN (3) | CN104137232A (en) |
| SG (2) | SG10201606827RA (en) |
| TW (1) | TWI550045B (en) |
| WO (1) | WO2013125446A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014034358A1 (en) * | 2012-08-30 | 2014-03-06 | 日立化成株式会社 | Polishing agent, polishing agent set and method for polishing base |
| CN105073941B (en) * | 2013-02-21 | 2018-01-30 | 福吉米株式会社 | Composition for polishing and abrasive material manufacture method |
| JP5900913B2 (en) | 2013-03-19 | 2016-04-06 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing composition manufacturing method and polishing composition preparation kit |
| US10717899B2 (en) | 2013-03-19 | 2020-07-21 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and polishing composition preparation kit |
| KR102239045B1 (en) * | 2013-06-07 | 2021-04-12 | 가부시키가이샤 후지미인코퍼레이티드 | Composition for silicon wafer polishing |
| KR102225154B1 (en) | 2013-06-12 | 2021-03-09 | 쇼와덴코머티리얼즈가부시끼가이샤 | Polishing liquid for cmp, and polishing method |
| US9778122B2 (en) | 2013-08-01 | 2017-10-03 | Mts Systems Corporation | Two-axis sensor body for a load transducer |
| US10591373B2 (en) | 2013-08-01 | 2020-03-17 | Mts Systems Corporation | Load transducer having a biasing assembly |
| JP6428625B2 (en) * | 2013-08-30 | 2018-11-28 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, and substrate polishing method |
| KR20160054466A (en) * | 2013-09-10 | 2016-05-16 | 히타치가세이가부시끼가이샤 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
| KR101405333B1 (en) * | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | Abrasive particles, polishing slurry and method of manufacturing a semiconductor device using the same |
| WO2015052988A1 (en) * | 2013-10-10 | 2015-04-16 | 日立化成株式会社 | Polishing agent, polishing agent set and method for polishing base |
| JP6256482B2 (en) * | 2013-12-26 | 2018-01-10 | 日立化成株式会社 | Abrasive, abrasive set, and substrate polishing method |
| JP6349852B2 (en) * | 2014-03-27 | 2018-07-04 | 日立化成株式会社 | Abrasive, stock solution for abrasive, and polishing method |
| JP6569191B2 (en) * | 2014-06-10 | 2019-09-04 | 日立化成株式会社 | Abrasive, abrasive set, and substrate polishing method |
| JP6268069B2 (en) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | Polishing composition and polishing method |
| US20160181435A1 (en) * | 2014-12-22 | 2016-06-23 | Wafertech, Llc | Floating gate transistors and method for forming the same |
| WO2016104611A1 (en) * | 2014-12-26 | 2016-06-30 | 花王株式会社 | Polishing solution composition for silicon oxide film polishing |
| US9505952B2 (en) | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
| US10414947B2 (en) | 2015-03-05 | 2019-09-17 | Cabot Microelectronics Corporation | Polishing composition containing ceria particles and method of use |
| US9758697B2 (en) | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
| TWI666308B (en) * | 2015-06-26 | 2019-07-21 | 日商日立化成股份有限公司 | Abrasive, storage solution for abrasive, and grinding method |
| US11046869B2 (en) * | 2015-09-09 | 2021-06-29 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and substrate polishing method |
| US10432461B2 (en) * | 2015-12-04 | 2019-10-01 | T-Mobile Usa, Inc. | Peer-to-peer distribution of radio protocol data for software defined radio (SDR) updates |
| WO2018142516A1 (en) * | 2017-02-01 | 2018-08-09 | 日立化成株式会社 | Polishing fluid, polishing fluid set, and polishing method |
| US11078380B2 (en) * | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
| US10316218B2 (en) * | 2017-08-30 | 2019-06-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
| KR102846745B1 (en) * | 2017-09-29 | 2025-08-13 | 가부시끼가이샤 레조낙 | Polishing solution, polishing solution set, and polishing method |
| JP7176225B2 (en) * | 2018-04-27 | 2022-11-22 | 昭和電工マテリアルズ株式会社 | Polishing liquid, polishing liquid set and polishing method |
| CN114193328A (en) * | 2020-09-18 | 2022-03-18 | 中国科学院微电子研究所 | Polishing agent container and polishing agent supply method |
| US20240052222A1 (en) * | 2021-04-20 | 2024-02-15 | Resonac Corporation | Polishing liquid, polishing liquid set and polishing method |
| EP4594366A1 (en) * | 2022-09-30 | 2025-08-06 | Versum Materials US, LLC | Modified water-soluble polysaccharides having different cation types for slurries in chemical mechanical planarization |
| KR20240062236A (en) * | 2022-10-28 | 2024-05-09 | 솔브레인 주식회사 | Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor by using the same |
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| WO2011111421A1 (en) | 2010-03-12 | 2011-09-15 | 日立化成工業株式会社 | Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same |
| JP5648567B2 (en) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Polishing liquid for CMP and polishing method using the same |
| CN103222036B (en) | 2010-11-22 | 2016-11-09 | 日立化成株式会社 | Suspension, polishing liquid kit, polishing liquid, method for polishing substrate, and substrate |
| CN103497732B (en) | 2010-11-22 | 2016-08-10 | 日立化成株式会社 | The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of substrate and substrate |
| KR101243331B1 (en) * | 2010-12-17 | 2013-03-13 | 솔브레인 주식회사 | Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same |
| CN102408836A (en) | 2011-10-20 | 2012-04-11 | 天津理工大学 | A kind of nano-polishing liquid for chemical mechanical planarization of titanium oxide thin film and its application |
| JP6044629B2 (en) * | 2012-02-21 | 2016-12-14 | 日立化成株式会社 | Abrasive, abrasive set, and substrate polishing method |
| JP5943073B2 (en) * | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid and polishing method for substrate |
| KR102034330B1 (en) * | 2012-05-22 | 2019-10-18 | 히타치가세이가부시끼가이샤 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| CN104321852B (en) * | 2012-05-22 | 2016-12-28 | 日立化成株式会社 | The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of matrix and matrix |
| WO2013175854A1 (en) * | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| JP6428625B2 (en) * | 2013-08-30 | 2018-11-28 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, and substrate polishing method |
| KR20160054466A (en) * | 2013-09-10 | 2016-05-16 | 히타치가세이가부시끼가이샤 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
-
2013
- 2013-02-14 CN CN201380010364.1A patent/CN104137232A/en active Pending
- 2013-02-14 CN CN201810916995.4A patent/CN108831830B/en active Active
- 2013-02-14 KR KR1020147024760A patent/KR102005132B1/en active Active
- 2013-02-14 SG SG10201606827RA patent/SG10201606827RA/en unknown
- 2013-02-14 CN CN201710996717.XA patent/CN107617968A/en active Pending
- 2013-02-14 SG SG11201405091TA patent/SG11201405091TA/en unknown
- 2013-02-14 US US14/379,954 patent/US10557058B2/en active Active
- 2013-02-14 JP JP2014500686A patent/JP6044630B2/en active Active
- 2013-02-14 WO PCT/JP2013/053559 patent/WO2013125446A1/en not_active Ceased
- 2013-02-20 TW TW102105885A patent/TWI550045B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6044630B2 (en) | 2016-12-14 |
| TW201343825A (en) | 2013-11-01 |
| WO2013125446A1 (en) | 2013-08-29 |
| CN107617968A (en) | 2018-01-23 |
| JPWO2013125446A1 (en) | 2015-07-30 |
| US10557058B2 (en) | 2020-02-11 |
| CN108831830B (en) | 2024-05-17 |
| US20150017806A1 (en) | 2015-01-15 |
| TWI550045B (en) | 2016-09-21 |
| CN108831830A (en) | 2018-11-16 |
| KR102005132B1 (en) | 2019-07-29 |
| KR20140129092A (en) | 2014-11-06 |
| SG10201606827RA (en) | 2016-10-28 |
| CN104137232A (en) | 2014-11-05 |
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