RU2294051C2 - Method and device for multifrequency modulation of signal amplitude and phase - Google Patents

Abstract

FIELD: radio communications; shaping differently modulated signals.

SUBSTANCE: proposed method is characterized in that modulator is assembled of semiconductor diode, high-frequency control signal source, and four-terminal network whose input is connected to multifrequency signal source; four-terminal network has two-terminal networks, each being made of reactance components whose parameters are chosen so as to ensure double-layer mechanisms of varying amplitude and phase of multifrequency signals at chosen interpolation frequencies in case controlled semiconductor diode changes its state under impact of low-frequency control signal; in this case semiconductor diode is inserted into longitudinal circuit between four-terminal network output and low-voltage control signal source. Device implementing this method has circulator, reactance four-terminal network, and semiconductor diode connected to low-frequency control signal source; reactances of two-terminal networks at each of two preset frequencies and parameters of parallel circuit are chosen from mathematical equations given in claim of invention.

EFFECT: enlarged functional capabilities and enhanced capacity of data transferred.

2 cl, 5 dwg

Description

The invention relates to radio communications and can be used to form phase-shifted, amplitude-manipulated, as well as amplitude-phase-shifted signals.

A known method of manipulation (modulation) of the parameters of the reflected signal, consisting in the fact that the input resistance of the manipulation device is changed so that the reflection coefficient of this device changes the phase by π, π / 2, π / 4, and a circulator is used to separate the input and reflected signal [Radio transmitting devices. / Edited by O.A. Chelnokov. - M.: Radio and Communications, 1982, p. 152-156]. A device for implementing this method is known [ibid.], Consisting of a circulator, the first input of which is connected to a signal source, the third input is connected to a load, and the second is connected to a piece of an open transmission line of length λ / 4, at the beginning of which a p-i-n diode is turned on.

If the diode is closed, then reflection occurs from the cross section in which it is turned on, the reflected wave enters the load with a resistance of 50 Ohms. If the diode is open, then reflection occurs from the end of the line. The phase of the reflected signal in one state of the diode differs from the phase of the reflected signal in the other state of the diode by π. If necessary, change the phase difference, the length of the length of the transmission line is changed accordingly.

The disadvantage of this method and device for its implementation is that in the two states of the diode only the phase of the reflected signal changes, and the specified values of the phase difference of the reflected signal in the two states of the diode is provided only at one fixed frequency. Another disadvantage is the constancy of the amplitude of the reflected signal in two states of the diode, that is, the absence of amplitude manipulation, which narrows the functionality. For example, this does not allow providing two radio communication channels on the same carrier frequency [one channel can be formed by amplitude manipulation, and the other by phase manipulation, or it can not provide encoding of the transmitted information]. The third disadvantage should be considered large masses and dimensions associated with the need to use segments of the transmission line. The fourth disadvantage is that the manipulation device, consisting of controlled and uncontrolled parts, is connected between the signal source and the load, which have certain resistance values. The signal source has a purely real resistance (second input). The load for the reflected signal (third input) also has a real resistance. The manipulator is connected to an open (infinite resistance) or closed to (zero resistance) transmission line. Another important disadvantage is that this method and this device do not simultaneously provide for the manipulation of the amplitude and phase of the transmitted and reflected signal.

A known method of manipulating the phase of the reflected signal, based on the use of dual-impedance microwave devices [V.G. Sokolinsky, V.G. Sheinkman. Frequency and phase modulators and manipulators. - M.: Radio and Communications, 1983, p. 146-158]. A device for implementing this method is known [ibid.], Consisting of a certain number of reactive elements of type L, C, the parameters of which are selected from the condition for providing the desired arbitrary phase difference of the reflection coefficient.

Compared with the previous method and device, this method and device for its implementation do not require the use of semiconductor diodes only in open and only closed states. For any diode states determined by two levels of low-frequency control action, for certain values of parameters of type L, C, a given value of the phase difference of the reflected signal at a fixed frequency can be provided. If the amplitude of the control low-frequency signal between these two levels changes continuously, then modulation is ensured.

The main disadvantages of this method and device for its implementation are the inability to provide the required values of the phase difference and the ratio of the moduli of reflection coefficients in two states of the controlled element at two or more frequencies. Another disadvantage is that, like the first method and device, the manipulator can only be included between certain resistances. Another important disadvantage is that this method and this device do not provide manipulation of the amplitude and phase of the transmitted signal.

The closest in technical essence and the achieved result (prototype) is the method [A. Golovkov A device for modulating the reflected signal. A.S. No. 1800579 dated 10.10.1992], consisting in the fact that the uncontrolled part (matching filtering device) forms from two-terminal devices connected in a certain way, the resistance of each two-terminal device is selected from the condition of ensuring the same predetermined two-level law of change in the amplitude and phase of the reflected signal when the controlled signal changes element from one state to another under the influence of a control low-frequency voltage or current.

A device (prototype) is known for implementing the method [ibid.], Comprising a circulator, the first and third arms of which are a microwave input and a microwave output, and a reactive four-terminal and a semiconductor diode connected to a low-frequency control source are included in the second shoulder, while the four-terminal made in the form of a T-shaped connection of two-terminal devices with reactance values that are selected from the conditions for ensuring the required laws of two-level changes in the amplitude and phase of the reflected signal Vuh predetermined frequencies. As in the previous method and apparatus, it is possible to modulate the phase and amplitude if the control signal changes continuously.

The main disadvantages of this method and device include the lack of the possibility of implementing different given laws of changing the amplitude and phase of the reflected signal at two or more specified frequencies, which reduces the functionality and the amount of transmitted information. Another disadvantage is that, as in the first two methods and devices, the manipulator can only be included between certain resistances. Another important disadvantage is that this method and this device do not provide manipulation of the amplitude and phase of the transmitted signal.

The technical result of the invention is to expand the functionality and increase the amount of information transmitted through the implementation of the required different laws of changing the amplitude and phase of the simultaneously reflected and transmitted signals at a given number of fixed frequencies when the manipulator is turned on between arbitrary resistances.

This result is achieved by the fact that in the method of multi-frequency modulation of the amplitude and phase of the signals, consisting in the fact that the modulator is divided into controlled and uncontrolled parts, they are turned on between the signal source and the load, the uncontrolled part of the modulator is formed from connected two-terminal devices in a certain way, each of two-terminal devices form from the required number of reactive elements, the parameters of which are selected from the condition of ensuring a two-level change in the amplitude and phase of the signal when changing and pedals of the controlled part of the modulator from one state to another under the influence of a control low-frequency voltage or current at fixed frequencies, additionally, the impedances of the signal source and load are chosen arbitrarily, the number of fixed frequencies is chosen arbitrarily, the number of reactive elements forming two-terminal uncontrolled parts, and their values are selected from the condition providing specified different laws for changing the amplitude and phase of simultaneously transmitted and reflected signals on a selected number fixed frequencies.

The specified result is achieved by the fact that in the device implementing the method of multi-frequency modulation of the amplitude and phase of the signals containing a circulator, the first and third arm of which are the microwave input and the microwave output or load for the reflected signal, and the second arm, which is the source of the microwave carrier signal, includes a reactive four-terminal and a semiconductor diode connected to a source of low-frequency control signal included in the transverse circuit, and the four-terminal is made in the form of a T-shaped connection of three reactive two-terminal, additionally, the resistance of the second arm is chosen arbitrarily, the semiconductor diode is included in the longitudinal circuit, the load for the transmitted microwave signal with arbitrary impedances at two given frequencies is connected in parallel with the low-frequency control signal source, and the two-terminal ones with resistances x _1n , x _2n , x _3n T -shaped connections are made of series and parallel oscillatory circuits connected in series with each other, while the reactance of the two-terminal circuits of the two given frequencies ω ₁ , ω ₂ and the parameters of the parallel circuit L ₁ , C ₁ are selected from the following mathematical expressions:

x _1n = x ₁₁ -x ₂₁ ; x _2n = x ₂₁ ; x _3n = -x ₂₂ -x ₂₁ ;

where k = 1, 2, 3 is the number of a two-terminal device counting from the side of the microwave signal source; n = 1, 2 - frequency number;

;

;

,

- действительные и мнимые части комплексного сопротивления источника сигнала, то есть второго плеча циркулятора, а также третьего плеча циркулятора, являющегося выходом или нагрузкой для отраженного сигнала, различные на каждой из двух; частот;

,

- действительные и мнимые части комплексного сопротивления нагрузки для проходного сигнала, различные на каждой из двух частот; r_1n,2n, x_1n,2n - действительные и мнимые части комплексного сопротивления управляемого элемента в двух состояниях, определяемых двумя уровнями тока и напряжения источника низкочастотного управляющего сигнала, различные на каждой из двух частот; m_21n, φ_21n - заданные отношения модулей и разность фаз коэффициентов передачи в двух состояниях управляемого элемента на двух частотах; m_n, φ_21n - заданные отношения модулей и разность фаз вспомогательного элемента волновой матрицы передачи в двух состояниях на двух частотах, причем параметры m_21n, φ_21n, m_n, φ_n, на каждой из двух частот выбираются из условия: m_11n=m_nm_21n; φ_11n=φ_n+φ₂₁ - где m_11n, φ_11n заданные отношения модулей и разность фаз коэффициентов отражения в двух состояниях управляемого элемента; параметры L₂, С₂ последовательного контура выбраны произвольно.

,

- the real and imaginary parts of the complex resistance of the signal source, that is, the second arm of the circulator, as well as the third arm of the circulator, which is the output or load for the reflected signal, different on each of the two; frequencies;

,

- the real and imaginary parts of the complex load resistance for the pass-through signal, different at each of the two frequencies; r _{1n, 2n} , x _{1n, 2n} are the real and imaginary parts of the complex resistance of the controlled element in two states, determined by two levels of current and voltage of the source of the low-frequency control signal, different at each of the two frequencies; m _21n , φ _21n are the given ratios of the modules and the phase difference of the transmission coefficients in two states of the controlled element at two frequencies; m _n , φ _21n are the given ratios of the modules and the phase difference of the auxiliary element of the transmission wave matrix in two states at two frequencies, and the parameters m _21n , φ _21n , m _n , φ _n , at each of the two frequencies are selected from the condition: m _11n = m _n m _21n ; φ _11n = φ _n + φ ₂₁ - where m _11n , φ _{11n are the} given ratios of the modules and the phase difference of the reflection coefficients in two states of the controlled element; the parameters L ₂ , C _{2 of the} serial circuit are selected arbitrarily.

This result is achieved by the fact that in the previous device for implementing the method of multi-frequency modulation of the amplitude and phase of the signals, the four-terminal network is made in the form of a U-shaped connection of three two-terminal networks, while the reactance of the two-terminal networks at each of the two frequencies is selected in accordance with the following mathematical expressions:

Where

This result is achieved by the fact that in the first device for implementing the method of multi-frequency modulation of the amplitude and phase of the signals, the number of frequencies is chosen equal to three, and the two-terminal T-shaped connections are made of series-connected capacitor with a capacitance C ₀ parallel to the oscillatory circuit with parameters L ₁ , C ₁ and bipolar with reactance x ₀ , while the parameters C ₀ , L ₁ , C ₁ are selected using the following mathematical expressions:

Where

ω ₁ , ω ₂ , ω ₃ , - given fixed frequencies; X _k1 = x _k1 -x ₀ (ω ₁ ); X _k2 = x _k2 -x ₀ (ω ₂ ); X _k3 = x _k3 -x ₀ (ω ₃ ); X _k1 , X _k2 , X _k3 - reactance of a series-connected capacitance C ₀ and a parallel oscillatory circuit with parameters L ₁ , C ₁ ; x _k1 , x _k2 , x _k3 - reactance of a series-connected capacitance C ₀ , a parallel circuit with parameters L ₁ , C ₁ and a two-terminal with reactance x ₀ at three given frequencies, while a two-terminal with reactance x ₀ is formed from an arbitrary number reactive elements connected in any way with arbitrary values of the parameters L, C.

This result is achieved by the fact that in the previous device for implementing the method of multi-frequency modulation of the amplitude and phase of the signals, the four-terminal is made in the form of a U-shaped connection of three two-terminal, while the reactance of the two-terminal at each of the three frequencies is selected in accordance with the following mathematical expressions:

Where

Figure 1 shows a diagram of a device for modulating the amplitude and phase of the signals that implements the prototype method.

Figure 2 shows a diagram of the first proposed device for modulating the amplitude and phase of the signals of the reflected and transmitted signals that implements the proposed method of multi-frequency modulation, for the case n = 1, 2.

Figure 3 shows a diagram of the second proposed device for modulating the amplitude and phase of the signals of the reflected and transmitted signals that implements the proposed method of multi-frequency modulation, for the case n = 1, 2.

Figure 4 presents a diagram of the third proposed device for modulating the amplitude and phase of the signals of the reflected and transmitted signals that implements the proposed method of multi-frequency modulation, for the case n = 1, 2, 3.

Figure 5 formed a diagram of the fourth proposed device for modulating the amplitude and phase of the signals of the reflected and transmitted signals that implements the proposed method of multi-frequency modulation, for the case n = 1, 2, 3.

The prototype device contains a circulator 1 with input 2, load 3 and output 4 shoulders, three two-terminal devices with reactances x ₁ , x ₂ , x ₃ , connected by a T-circuit, as well as a semiconductor diode 8 connected in parallel to the signal source modulation 9. bipolar 7 is connected to the diode 8, bipolar 5 to the load arm 3 of the circulator 1.

The principle of operation of the device manipulating the parameters of the signal that implements the prototype method is as follows.

The signal from the master oscillator (not shown in FIG. 1) through the input arm 2 of the circulator 1 enters the load arm 3. As a result of the interaction of the received signal with the reactive elements and the diode and due to the special choice of the values of the reactive elements of the two-terminal devices, the phases and amplitudes of the reflected signals at two frequencies turns out to be such that, as a result of their interference, signals are output to the output arm of the circulator 1, the amplitude and phase of which are in the same state of diode 8, defined by one extreme value of the signal la modulation source 9 differs from the amplitude and phase of these signals in a different state of the diode 8 at the specified values at the respective two frequencies. The maximum phase deviation can be 360 °, the minimum is zero, and the maximum amplitude ratio is ∞.

The proposed four device modulation of the signal parameters (Fig.2-5) contain a circulator 1 with input 2, load 3 and output for the reflected signal 4 shoulders, three two-terminal with reactance x _1n , x _n2 , x _n3 , interconnected by T or P-circuit, as well as a semiconductor diode 8 connected in series to the source of the modulation signal 9, the two-terminal 7 is connected in series to the diode 8, the two-terminal 5 is connected to the load arm 3 of the circulator 1. A load 10 is connected to the source of the modulation signal (resisting signal) ohodnogo signal.

These devices operate as follows. Thanks to a special choice of the number of reactive elements of two-terminal circuits of their connections and the values of their parameters when switching a control (modulating) signal on a diode, the reflected and transmitted signals will be simultaneously manipulated at a given number of frequencies in the general case by different laws of two-level change in amplitude and phase. With a continuous change in the amplitude of the control signal, the reflected and transmitted signals will be modulated in amplitude and phase in the general case according to arbitrary laws. The reflected signal, modulated in amplitude and phase at a given number of frequencies, goes to output 4, and the pass-through to load 10.

Let us prove the feasibility of implementing these properties.

Let the resistance of the signal source z ₀ = r ₀ + jx ₀ , the load z _n = r _n + jx _n and the controlled element z _1,2 = x _1,2 + jx _1,2 in two states determined by the levels of the control exposure.

It is required to determine the structure of the circuit, the minimum number of elements and parameter values at which switching a controlled element from one state to another would uniquely lead to a change in the modules and phases of the reflection and transmission coefficients according to the following laws [Golovkov AA, Minakov VG The relationship between the elements of the resistance matrix and their use for the synthesis of matching-filtering devices of amplitude-phase manipulators. Telecommunications, No. 8, 2004, p.29-32.]:

where m ₁₁ = | S ₁₁ '| / | S ₁₁ "|; m ₂₁ = | S ₂₁ ' | / | S ₂₁ "|; φ ₁₁ '= φ ₁₁ ' -φ ₁₁ "; φ ₂₁ = φ ₂₁ '-φ ₂₁ "

- the required ratio of the modules and the phase difference of the reflection coefficients S ₁₁ ', S ₁₁ "and transmission S ₂₁ ', S ₂₁ " in two states of the controlled element.

Let the controlled element be included in the longitudinal circuit between the SFU and the load, and only reactive elements are supposed to be used in the SFU so that it is characterized by a resistance matrix

and the corresponding classical transfer matrix [Feldstein A.L., Yavich L.R. Microwave four-terminal and eight-port synthesis. M .: Communication, 1971, 388 p.]:

where | x | = -x ₁₁ x ₂₂ -x ₂₁ ² is the determinant of matrix (3).

The controlled element in two states is characterized by the following transfer matrix.

We multiply matrices (4) and (5) and, taking into account z ₀ , z _n [in the same place], we write the normalized transfer matrix of the entire device:

Using the well-known relations between the elements of the classical transmission matrix and the elements of the scattering matrix [ibid], taking into account (6), we obtain the expressions for the reflection and transmission coefficients:

We substitute (8) in (2) and separate the real and imaginary parts in the resulting complex equation among themselves:

The solution to this system is as follows:

x ₁₁ = D ₁ x ₂₂ + E ₁ x ₀ ;

Where

The obtained two relations (9) between the elements of the matrix of resistance of the SFU of the amplitude-phase manipulator mean that the number of uncontrolled elements must be at least two. The values of the parameters of these elements, which are optimal according to the criterion of ensuring the required values of m ₂₁ , φ ₂₁ , must satisfy the system of two equations formed on the basis of (9). For this, it is necessary to take a test circuit of SFU, find the resistance matrix of this circuit and present it in the form (3). The elements x ₁₁ , x ₂₂ , x ₂₁ thus obtained, expressed through the parameters of the circuit, must be substituted into (9) and the formed system of two equations should be solved with respect to the selected two parameters.

The remaining parameters in this case relate to the controlled part and participate in the formation of z ₁ , z ₂ , i.e. are included in the coefficients D, E, F.

The conditions for the physical realizability of the given values of m ₂₁ , φ ₂₁ follow from ensuring the positivity of the radical expression in (10).

Since E ² + FD = -r ₀ ² , this condition reduces to the requirement D <0.

The last inequality implies a restriction on φ ₂₁ :

For the same reasons, expression (10) implies a restriction on

- качество управляемой части манипулятора с учетом действительной части сопротивлением нагрузки.Where

- the quality of the controlled part of the manipulator, taking into account the real part of the load resistance.

A similar solution for the reflected signal is very cumbersome due to the more complex form of the expression for the reflection coefficient (7) compared to (8). These difficulties can be avoided by using the solution of a lighter auxiliary problem of providing the required values of the phase difference and module ratios of one of the elements of the T ₂₁ wave transmission matrix [ibid]:

Substitute (13) in the required law of change in the amplitude and phase of the element T ₂₁ :

; φ=φ'-φ" - требуемые отношения модулей и разности фаз элементов Т₂₁', Т₂₁'' в двух состояниях управляемого элемента.Where

; φ = φ'-φ "- the required ratios of the modules and the phase difference of the elements T ₂₁ ', T ₂₁ " in two states of the controlled element.

After separating the real and imaginary parts in (14), taking into account (13), we obtain a system of two equations:

the solution of which is:

x ₁₁ = D ₂ x ₂₂ + E ₂ + x ₀ ;

Where

The physical realizability conditions arising from the same considerations are reduced to a restriction on m, φ.

Where

Since relations (10), (16) describe the relationships between the elements of the resistance matrix of the same SFU, they should be equal in pairs. From these equalities follows the expression for x ₂₂ :

Thus, all three elements of matrix (3) turn out to be strictly given. This means that to ensure the required values of m ₁₁ , φ ₁₁ it is necessary to have at least three independent elements in the SFU. Their parameters should be determined from the solutions of three systems of equations (10), (19) or (16), (16) according to the algorithm described for the pass-through signal. Moreover, in accordance with (13), the required phase difference and the ratio of the moduli of reflection coefficients in two states are determined by the formulas:

where m, m ₂₁ , φ, φ ₂₁ are set from the conditions for ensuring the required m ₁₁ and φ ₁₁ . Moreover, the second equality from (19) is satisfied automatically.

The simplification of algebraic transformations was achieved by increasing the required number of elements of SFU to three.

In accordance with the described algorithm, expressions are obtained for the SFU schemes of the T-shaped (Fig. 2, 4) and U-shaped (Fig. 3, 5) connections of three two-terminal networks, in which the proposed modulation devices with given values of m ₂₁ , φ ₂₁ and m ₁₁ , φ ₁₁ :

for T-joint

for U-shaped connection

In expressions (21), (22), the elements x ₁₁ , x ₂₁ and x _{22 are} determined by formulas (10), (19) or (16), (19). Ensuring the positivity of the radical expressions in (21), (22) are conditions for the physical realizability of the corresponding schemes. The structure of the schemes is defined as follows. If in formulas (21) - (22) X _n > 0 (n = 1, 2, 3), then this is the inductance L _n = X _n / (ω = 2πf). If X _n <0, then this is the capacity

The implementation of the required frequency characteristics in two states can easily be done by interpolation on two, three, etc. frequencies. To do this, it is necessary to form each of the two-terminal circuits of the SFU circuit (FIGS. 2-5) from the elements L ₁ , C ₁ so that it provides the required resistance values at the given frequencies, calculated according to formulas (21) - (22) for the same frequencies. Here are two solutions to such problems. For two given frequencies, it is proposed to form two-terminal circuits from parallel and serial oscillatory circuits connected in series between each other. The resistances of such two-terminal devices at two frequencies are determined by the expressions:

The solution of the system of two equations (23) determines the parameters L ₁ , C _{1 of the} parallel circuit:

where k = 1, 2, 3 is the number of the two-terminal network; n = 1, 2 - frequency number.

In expressions (24), the parameters L, C can be chosen arbitrarily on the basis of any physical considerations, for example, from the condition of ensuring a minimum of deviations of the given characteristics in a given frequency band or based on the condition of physical realizability of the circuits.

For three given frequencies, it is proposed to form two-terminal circuits of series-connected capacitance C ₀ , a parallel circuit L ₁ , C ₁ and a reactive two-terminal with resistance jx ₀ . In this case, the parameters are determined from the solution of the system of three equations:

The solution has the form:

Where

X _k1 = x _k1 -X ₀ (ω ₁ ); X _k2 = x _k2 -X ₀ (ω ₂ ); X _k3 = x _k3 -X ₀ (ω ₃ ); X _k1 , X _k2 , X _k3 - reactance of a series-connected capacitance C ₀ and a parallel oscillatory circuit with parameters L ₁ , C ₁ ; x _k1 , x _k2 x _k3 - reactance of series-connected capacitance C ₀ , parallel circuit with parameters L ₁ , C ₁ and two-terminal with reactance x ₀ at three specified frequencies, while a two-terminal with reactance x ₀ is formed from an arbitrary number of connected in any way reactive elements with arbitrary values of the parameters L, C; ω ₁ , ω ₂ , ω ₃ - given fixed frequencies.

The reactance jx _{0 of the} two-terminal network is formed arbitrarily or on the basis of any physical considerations, for example, on the basis of the conditions for ensuring a minimum of deviations of characteristics in the frequency band.

The obtained solutions (24) and (26) for two and three given frequencies can be used both in the T-shaped circuit of the connection of three two-terminal networks and in the U-shaped one. Therefore, the options for the proposed devices for implementing the proposed method of multi-frequency modulation of the amplitude and phase of the simultaneously reflected and transmitted signals can be only four.

The proposed technical solutions are new, since the methods of simultaneous multi-frequency modulation of the parameters of the reflected and transmitted signals and the implementation device, consisting of in a certain way connected a certain number of reactive elements L, C, determined by the corresponding mathematical expressions, are unknown from publicly available information.

The proposed technical solutions have an inventive step, since it does not explicitly follow from the published scientific data and the known technical solutions that the claimed sequence of operations (the formation of an uncontrolled part of the two-terminal circuits connected in a certain way from the condition of providing a two-level change in the amplitude and phase of the reflected and transmitted signals for a given number frequencies when the state of the controlled element included in the longitudinal circuit changes at arbitrary values Barrier-resistances of the signal source and the load), the claimed compounds circuit elements L, C, forming a two-terminal network, and a mathematical expression for determining their parameters provide an increase in volume of information transmitted and expansion functionality.

The proposed technical solutions are practically applicable, since typical circulators, for example FPVN 4-2, semiconductor diodes, for example p-in diodes, varicaps, etc., commercially available inductance and capacitance industry, formed in the declared circuits, can be used for their implementation bipolar T, U-shaped connections. The values of the parameters of capacitances and inductances can be unambiguously determined using mathematical expressions given in the claims.

The technical and economic efficiency of the proposed method and device for its implementation is to increase the amount of various information transmitted by organizing the necessary number of radio channels operating both in the direction of the reflected signal and in the direction of the transmitted signal by determining the values of all parameters of the reactive elements based on the conditions for ensuring the required different laws of changing the amplitude and phase of the reflected and transmitted signals at a given number of fixed frequencies.

Claims (2)

1. The method of modulating the amplitude and phase of multi-frequency signals, which consists in the fact that the modulator is made up of a controlled semiconductor diode, a source of low-frequency control signal and a four-terminal, the input of which is connected to a source of multi-frequency signals, the four-terminal consists of three two-terminal, each of the two-terminal is formed from the number of reactive elements, not less than the number of interpolation frequencies of the required amplitude and phase frequency characteristics, parameters of reactive elements of two-terminal devices select from the condition of providing two-level laws for changing the amplitude and phase of multi-frequency signals at selected interpolation frequencies when the impedance of a controlled semiconductor diode changes from one state to another under the influence of a control low-frequency signal, characterized in that the controlled semiconductor diode is included in the longitudinal circuit between the output of the four-terminal and the control source of a low-frequency signal, the number of fixed frequencies is selected from the condition of ensuring the specified deviations of the frequency characteristics of the required at the interpolation frequencies, the impedances of the source of multi-frequency signals and loads for loop-through and reflected modulated in amplitude and phase of the multi-frequency signals are selected complex, the values of the parameters of the reactive elements are selected from the condition of simultaneously providing the given different laws of changing the amplitude and phase of the transmitted and reflected multi-frequency signals at a selected number of fixed interpolation frequencies of the required amplitude and phase-frequency characteristics. 2. A device for modulating the amplitude and phase of multi-frequency signals, comprising a circulator, the first arm of which is a high-frequency input for multi-frequency signals, and the third arm is a high-frequency output for reflected modulated multi-frequency signals, and a reactive four-terminal and a semiconductor diode connected to a low-frequency source are included in the second arm a control signal included in the transverse circuit, and the four-terminal is made in the form of a T-shaped connection of three reactive two-terminal, characterized in that the resistance of the second and third arms is selected to be complex, the semiconductor diode is included in the longitudinal circuit, the load for pass-through modulated multi-frequency signals with complex resistances at two given frequencies is included in parallel to the source of the low-frequency control signal, and the two-terminal ones with resistances x _1n , x _2n , x _3n T-shaped connections are serially connected between a series and parallel resonant circuits, the reactance vuhpolyusnikov on each of two given frequencies ω _1, ω _2, and the parallel circuit parameters L _1, C ₁ are selected from the following mathematical expressions: x _1n = x ₁₁ -x ₂₁ ; x _2n = x ₂₁ ; x _3n = -x ₂₂ -x ₂₁ ;

where k = 1, 2, 3 - the number of two-terminal, counting from the source of the microwave signal; n = 1, 2 - frequency number;

- the given real and imaginary parts of the complex resistance of the source of multi-frequency signals, that is, the second arm of the circulator, as well as the third arm of the circulator, which is the output or load for the modulated reflected multi-frequency signals, different at each of the two frequencies;

- specified real and imaginary parts of the complex load resistance for the pass-through signal, different at each of the two frequencies; r _{1n, 2n} , x _1n , _2n are the given real and imaginary parts of the complex resistance of the semiconductor diode in two states, determined by the current or voltage levels of the source of the low-frequency control signal, different at each of the two frequencies; m ₂₁ , φ _21n are the given ratios of the modules and the phase difference of the transmission coefficients in two states of the semiconductor diode at two frequencies; m _n , φ _n are the given ratios of the modules and the phase difference of the auxiliary element of the transmission wave matrix in two states at two frequencies, and the parameters m _21n , φ _21n , m _n , φ _n at each of the two frequencies are selected from the condition m _11n = m _n m _21n ; φ _11n = φ _n + φ _21n , where m _11n , φ _11n are the given ratios of the modules and the phase difference of the reflection coefficients in two states of the semiconductor diode; the parameters L ₂ , C _{2 of the} serial circuit are selected arbitrarily.

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