KR970018395A - Metal wiring layer formation method - Google Patents

Metal wiring layer formation method Download PDF

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Publication number
KR970018395A
KR970018395A KR1019950029497A KR19950029497A KR970018395A KR 970018395 A KR970018395 A KR 970018395A KR 1019950029497 A KR1019950029497 A KR 1019950029497A KR 19950029497 A KR19950029497 A KR 19950029497A KR 970018395 A KR970018395 A KR 970018395A
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South Korea
Prior art keywords
metal film
metal
wiring layer
reaction
self
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KR1019950029497A
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Korean (ko)
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박창수
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김광호
삼성전자 주식회사
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Priority to KR1019950029497A priority Critical patent/KR970018395A/en
Publication of KR970018395A publication Critical patent/KR970018395A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

고융점 금속을 배선재료로 사용하는 금속 배선층 형성방법을 개시한다. 본 발명은 화학적 기상 증착방법(Chemical Vapor Deposition)을 통하여 고융점 금속 배선층을 형성하는 방법에 있어서, 상기 금속막의 펴면 조도(roughness)를 개선하기 위하여, 증착 금속과의 화학 반응을 일으키는 반응 소오스(source)로서 플루오린 기(Fradical)을 포함하는 반응가스를 사용하여 금속막을 증착한 후, 별도의 환원기체 없이 상기 반응 소오스와 비활성 가스와의 혼합 기체를 사용한 셀프-에칭(Self-Etching) 공정을 이용하여 금속막의 표면 모폴로지(Surface Morphology)를 개선한다.A metal wiring layer forming method using a high melting point metal as a wiring material is disclosed. The present invention is a method of forming a high melting point metal wiring layer through a chemical vapor deposition method, in order to improve the roughness (roughness) of the metal film, a reaction source that causes a chemical reaction with the deposited metal (source) After the deposition of a metal film using a reaction gas containing a fluorine group (Fradical) as a), using a self-etching process using a mixed gas of the reaction source and an inert gas without a separate reducing gas Thereby improving the surface morphology of the metal film.

Description

금속배선층 형성방법Metal wiring layer formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2(a)도 내지 제2(c)도는 종래 및 본 발명에 의한 형성된 배선층의 표면 모플로지 특성을 나타낸 도면들이다.2 (a) to 2 (c) are views showing surface morphology characteristics of the wiring layer formed according to the prior art and the present invention.

Claims (6)

화학적 기상 증착방법(Chemical Vapor Deposition)을 통하여 고융점 금속 배선층을 형성하는 방법에 있어서, 상기 금속막의 펴면 조도(roughness)를 개선하기 위하여, 증착 금속과의 화학 반응을 일으키는 반응 소오스(source)로서 플루오린 기(Fradical)을 포함하는 반응가스를 사용하여 금속막을 증착한 후, 별도의 환원기체 없이 상기 반응 소오스와 비활성 가스와의 혼합 기체를 사용한 셀프-에칭(Self-Etching) 공정을 이용하여 금속막의 표면 모폴로지(Surface Morphology)를 개선하는 것을 특징으로 하는 금속 배선층 형성방법.In the method of forming a high melting point metal wiring layer through a chemical vapor deposition method, in order to improve the roughness of the metal film, fluorine as a reaction source causing a chemical reaction with the deposited metal After depositing a metal film using a reaction gas containing a lean group (Fradical), the metal film of the metal film using a self-etching process using a mixed gas of the reaction source and the inert gas without a separate reducing gas Method for forming a metal wiring layer, characterized in that to improve the surface morphology (Surface Morphology). 제1항에 있어서, 상기 고융점 금속으로서, 턴스텐(W) 및 몰리브데늄(Mo) 중의 어느 한 금속을 사용하는 것을 특징으로 하는 금속배선층 형성방법.The method for forming a metal wiring layer according to claim 1, wherein any one of turnsten (W) and molybdenum (Mo) is used as the high melting point metal. 제1항에 있어서, 상기 셀프-에칭 공정 후, 잔류 F기를 제거하기 위하여 H2가스에 추가 노출시키는 플러싱(Flushing) 공정을 부가하는 것을 특징으로 하는 금속 배선층 형성방법.The method of claim 1, further comprising, after the self-etching process, a flushing process of additional exposure to H 2 gas to remove residual F groups. 제1항에 있어서, 상기 셀프-에칭 공정은 금속막의 증착 압력과 동일하거나 그 이상의 압력조건에서 수행하는 것을 특징으로 하는 금속배선층 형성방법.The method of claim 1, wherein the self-etching process is performed at a pressure condition equal to or higher than the deposition pressure of the metal film. 제1항에 있어서, 상기 셀프-에칭 공정의 반응 온도가 상기 금속막 증착시의 온도와 같거나 그 이상의 온도 분위기하에서 수행되는 것을 특징으로 하는 금속배선층 형성방법.The method of claim 1, wherein the reaction temperature of the self-etching process is performed in a temperature atmosphere equal to or higher than the temperature of the metal film deposition. 제1항에 있어서, 상기 금속막 증착공정 및 증착된 금속막의 일부에 식각 현상을 일으키는 상기 셀프-에칭 공정은 대기 노출없이 동일챔버에서 연속적으로 수행되는 것을 특징으로 하는 금속배선층 형성방법.The method of claim 1, wherein the metal film deposition process and the self-etching process of causing an etching phenomenon on a portion of the deposited metal film are continuously performed in the same chamber without exposure to the atmosphere.
KR1019950029497A 1995-09-11 1995-09-11 Metal wiring layer formation method Withdrawn KR970018395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950029497A KR970018395A (en) 1995-09-11 1995-09-11 Metal wiring layer formation method

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Application Number Priority Date Filing Date Title
KR1019950029497A KR970018395A (en) 1995-09-11 1995-09-11 Metal wiring layer formation method

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KR970018395A true KR970018395A (en) 1997-04-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7116391B2 (en) 2001-02-07 2006-10-03 Samsung Electronics Co., Ltd. Liquid crystal display and method for manufacturing the same having particular pad unit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7116391B2 (en) 2001-02-07 2006-10-03 Samsung Electronics Co., Ltd. Liquid crystal display and method for manufacturing the same having particular pad unit
US7388641B2 (en) 2001-02-07 2008-06-17 Samsung Electronics, Co., Ltd. Liquid crystal display and method for manufacturing the same having particular pad unit
US7630047B2 (en) 2001-02-07 2009-12-08 Samsung Electronics Co., Ltd. Liquid crystal display and method for manufacturing the same
US7688415B2 (en) 2001-02-07 2010-03-30 Samsung Electronics Co., Ltd. Liquid crystal display and method for manufacturing the same

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