KR20140074816A - Dicing tape integrated adhesive sheet, manufacturing method of semiconductor device using dicing tape integrated adhesive sheet, and semiconductor device - Google Patents

Abstract

An object of the present invention is to provide a dicing tape-integrated adhesive sheet capable of preventing a circuit on a semiconductor chip from being broken in a process of manufacturing a semiconductor device.
In order to solve the above problems, a dicing tape-integrated adhesive sheet having a dicing tape laminated with a pressure-sensitive adhesive layer on a substrate and an adhesive sheet formed on the pressure-sensitive adhesive layer was subjected to a peeling test at a peeling speed of 10 m / min and a peeling angle of 150 In which the peeling force between the pressure-sensitive adhesive layer and the adhesive sheet is 0.02 to 0.5 N / 20 mm, and when the pressure-sensitive adhesive layer and the adhesive sheet are peeled off according to the conditions of the peeling test, An integrated adhesive sheet is provided.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dicing tape integral adhesive sheet, a dicing tape integral adhesive sheet, a semiconductor device manufacturing method using the dicing tape integral adhesive sheet,

The present invention relates to a method of manufacturing a semiconductor device using a dicing tape-integrated adhesive sheet, a dicing tape-integrated adhesive sheet, and a semiconductor device.

In recent years, further reduction in thickness and size of a semiconductor device and its package is required. Therefore, as a semiconductor device and a package thereof, a flip chip type semiconductor device in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connected) is widely used. In the flip chip connection, the circuit surface of the semiconductor chip is fixed in a form facing the electrode formation surface of the substrate. In such a semiconductor device or the like, the back surface of the semiconductor chip is protected by a protective film to prevent damage to the semiconductor chip.

Conventionally, as the protective film, there is a dicing tape-integrated semiconductor backing film in which a flip chip type semiconductor backing film is laminated as a protective film on a dicing tape (see, for example, Patent Document 1). In the manufacturing process of the semiconductor device using the dicing tape-integrated semiconductor backing film, first, the semiconductor wafer is adhered and fixed on the flip chip type semiconductor backing film of the dicing tape-integrated semiconductor backing film, Is done. Thereby, the semiconductor wafer is divided into a predetermined size, and becomes a semiconductor chip. Then, the semiconductor chip fixed to the dicing tape-integrated semiconductor backside film is picked up from the dicing film together with the flip chip type semiconductor backside film for picking up the semiconductor chip.

Further, in the manufacture of semiconductor devices, in addition to a flip chip type semiconductor backside film, a dicing tape integral type adhesive sheet in which, for example, a die bonding film or an underfill sheet is laminated on a dicing tape may be used. The die bond film is a film for die bonding the semiconductor chip to an adherend. The underfill sheet is a sheet for sealing between the circuit surface of the semiconductor chip and the electrode formation surface of the substrate in the flip chip type semiconductor device.

Japanese Patent Application Laid-Open No. 2011-228496

However, when a semiconductor device is manufactured using the above-described dicing tape-integrated adhesive sheet, a circuit formed on a conventional semiconductor device (for example, a semiconductor chip) may be broken.

The inventors of the present invention have investigated the cause of the breakdown of the circuit on the semiconductor element. As a result, in the pick-up process, when a semiconductor element having an adhesive sheet (for example, a film for flip-chip type semiconductor backing, a die bonding film or an underfill sheet) is peeled from the dicing tape, Peeling electrification occurs, and the circuit on the semiconductor element is destroyed by the generated static electricity in some cases.

DISCLOSURE OF THE INVENTION The inventors of the present invention have conducted intensive studies to solve the above-mentioned conventional problems. As a result, they have found that by setting the peeling force of the adhesive layer and the adhesive sheet of the dicing tape within a certain range, It is possible to prevent the circuit on the element from being destroyed. Thus, the present invention has been accomplished.

That is, the first aspect of the present invention is a dicing tape-integrated adhesive sheet having a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate and an adhesive sheet formed on the pressure-

The peel strength of the pressure-sensitive adhesive layer and the adhesive sheet in the peeling test at a peeling speed of 10 m / min and a peeling angle of 150 is 0.02 to 0.5 N /

And the peeling electrification voltage when the pressure-sensitive adhesive layer and the adhesive sheet are peeled off according to the conditions of the peeling test is 0.5 kV or less.

According to the above configuration, the peeling force between the pressure-sensitive adhesive layer and the adhesive sheet in the peeling test at a peeling speed of 10 m / min and a peeling angle of 150 is 0.02 to 0.5 N / 20 mm. Since the peeling force is 0.02 N / 20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Further, since the peeling force is 0.5 N / 20 mm or less, the semiconductor element with the adhesive sheet can easily be peeled off from the pressure-sensitive adhesive layer during pick-up. In addition, since the maximum value of the peeling electrification voltage when the pressure-sensitive adhesive layer and the adhesive sheet are peeled according to the conditions of the peeling test is 0.5 kV or less, the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

In the above configuration, it is preferable that the adhesive sheet is a flip-chip type semiconductor backing film for forming on the back surface of a semiconductor element flip-chip connected on an adherend. When the adhesive sheet is a film for flip-chip type semiconductor backing, the flip chip type semiconductor backing film is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, when the pressure-sensitive adhesive layer and the adhesive sheet are peeled off according to the conditions of the peeling test, the peeling electrification voltage is 0.5 kV or less. As a result, the circuit surface of the exposed semiconductor element can be prevented from being destroyed by peeling electrification.

In the above-described constitution, it is preferable that the substrate contains an antistatic agent. There is a case where peeling electrification occurs between the dicing tape and the adsorption table when the dicing tape is removed from the adsorption table for fixing the dicing tape after dicing. Therefore, if an antistatic agent is contained in the substrate, peeling electrification between the substrate and the adsorber can be suppressed.

In the above configuration, it is preferable that the substrate has a multilayer structure, and the antistatic agent is contained in the outermost layer of at least one of the substrates of the multilayer structure. When the antistatic agent is contained in the outermost layer of the pressure-sensitive adhesive layer side of the substrate of the multilayer structure, it is possible to suppress both of the charging of the substrate and the pressure-sensitive adhesive layer. When the antistatic agent is contained in the outermost layer of the substrate of the multilayer structure opposite to the pressure-sensitive adhesive layer, peeling electrification between the substrate and the adsorber can be more effectively suppressed.

In the above configuration, it is preferable that an antistatic agent layer containing an antistatic agent is formed on at least one side of the substrate. If an antistatic agent layer is formed on the surface of the substrate on the side of the pressure sensitive adhesive layer, it is possible to suppress both of the charging of the substrate and the pressure sensitive adhesive layer. Further, if the antistatic agent layer is formed on the surface of the substrate opposite to the pressure-sensitive adhesive layer, peeling electrification between the substrate and the adsorber can be more effectively suppressed.

In the above constitution, it is preferable that the pressure-sensitive adhesive layer contains an antistatic agent. If the pressure-sensitive adhesive layer contains an antistatic agent, peeling electrification when the pressure-sensitive adhesive layer and the adhesive sheet are peeled can be more effectively suppressed.

In the above configuration, it is preferable that the adhesive sheet contains an antistatic agent. If an antistatic agent is contained in the adhesive sheet, it has antistatic effect even after peeling off from the dicing tape. As a result, even after peeling from the dicing tape, breakage of the semiconductor element by charging can be suppressed.

The first invention of the present invention is a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet described above,

A step of adhering a semiconductor wafer onto the adhesive sheet in the dicing tape-integrated adhesive sheet,

A step of dicing the semiconductor wafer to form a semiconductor element,

And a step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet.

According to the above configuration, the dicing tape-integrated adhesive sheet described above is used. Therefore, the peeling force between the pressure-sensitive adhesive layer and the adhesive sheet is 0.02 to 0.5 N / 20 mm. Since the peeling force is 0.02 N / 20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Further, since the peeling force is 0.5 N / 20 mm or less, the semiconductor element to which the adhesive sheet is attached easily can be peeled off from the pressure-sensitive adhesive layer during pick-up. Further, since the maximum value of the peeling electrification voltage when peeled by the peeling test is 0.5 kV or less, the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

The semiconductor device according to the first aspect of the present invention is characterized by being manufactured by using the dicing tape-integrated adhesive sheet described above in order to solve the above problems.

The inventors of the present invention have made a study to solve the above-described problems of the related art. As a result, the present inventors have found that, by setting the value of the surface resistivity on the surface of at least one of the base material of the dicing tape and the pressure- It is possible to suppress the occurrence of breakage, and the present invention has been accomplished.

That is, the second aspect of the present invention is a dicing tape-integrated adhesive sheet having a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate and an adhesive sheet formed on the pressure-

Wherein the surface resistivity of the surface of at least one of the substrate and the pressure-sensitive adhesive layer is 1.0 x 10 < ¹¹ > or less.

According to the above configuration, since the surface resistivity of the surface of at least one of the substrate and the pressure-sensitive adhesive layer is not more than 1.0 x 10 < ¹¹ > Therefore, the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

In the above configuration, it is preferable that the adhesive sheet is a flip-chip type semiconductor backing film for forming on the back surface of a semiconductor element flip-chip connected on an adherend. When the adhesive sheet is a film for flip-chip type semiconductor backing, the flip chip type semiconductor backing film is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, at least one of the substrate and the pressure-sensitive adhesive layer has a surface resistivity of 1.0 x 10 < ¹¹ > As a result, the circuit surface of the exposed semiconductor element can be prevented from being destroyed by peeling electrification.

In the above-described constitution, it is preferable that the substrate contains an antistatic agent. There is a case where peeling electrification occurs between the dicing tape and the adsorption table when the dicing tape is removed from the adsorption table for fixing the dicing tape after dicing. Therefore, if an antistatic agent is contained in the substrate, peeling electrification between the substrate and the adsorber can be suppressed.

In the above configuration, it is preferable that the substrate has a multilayer structure, and the antistatic agent is contained in the outermost layer of at least one of the substrates of the multilayer structure. When the antistatic agent is contained in the outermost layer of the pressure-sensitive adhesive layer side of the substrate of the multilayer structure, it is possible to suppress both of the charging of the substrate and the pressure-sensitive adhesive layer. When the antistatic agent is contained in the outermost layer of the substrate of the multilayer structure opposite to the pressure-sensitive adhesive layer, peeling electrification between the substrate and the adsorber can be more effectively suppressed.

In the above configuration, it is preferable that an antistatic agent layer containing an antistatic agent is formed on at least one side of the substrate. If an antistatic agent layer is formed on the surface of the substrate on the side of the pressure sensitive adhesive layer, it is possible to suppress both of the charging of the substrate and the pressure sensitive adhesive layer. Further, if the antistatic agent layer is formed on the surface of the substrate opposite to the pressure-sensitive adhesive layer, peeling electrification between the substrate and the adsorber can be more effectively suppressed.

In the above constitution, it is preferable that the pressure-sensitive adhesive layer contains an antistatic agent. If the pressure-sensitive adhesive layer contains an antistatic agent, peeling electrification when the pressure-sensitive adhesive layer and the adhesive sheet are peeled can be more effectively suppressed.

In the above constitution, it is preferable that the antistatic agent is a polymeric type antistatic agent. If the antistatic agent is a polymeric type antistatic agent, it is difficult to bleed from the substrate or the pressure-sensitive adhesive layer. As a result, deterioration of the antistatic function due to aging can be suppressed.

A second aspect of the present invention is a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet described above,

A step of adhering a semiconductor wafer onto the adhesive sheet in the dicing tape-integrated adhesive sheet,

A step of dicing the semiconductor wafer to form a semiconductor element,

And a step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet.

According to the above configuration, the dicing tape-integrated adhesive sheet described above is used. Therefore, the surface resistivity of the surface of at least one of the substrate and the pressure-sensitive adhesive layer is 1.0 x 10 < ¹¹ > Since the surface resistivity value is 1.0 x 10 < ¹¹ > or less, an antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

The inventors of the present invention have made a study to solve the above-described problems of the prior art. As a result, the present inventors have found that by containing a polymeric antistatic agent in at least one of the base material and the pressure-sensitive adhesive layer of the dicing tape, And the present invention has been accomplished.

That is, the third aspect of the present invention is a dicing tape-integrated adhesive sheet having a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate and an adhesive sheet formed on the pressure-

And a polymeric antistatic agent is contained in at least one of the substrate and the pressure-sensitive adhesive layer.

According to the above configuration, since the polymeric antistatic agent is contained in at least one of the base material and the pressure-sensitive adhesive layer, it is difficult to charge. Therefore, the antistatic effect can be exhibited. Further, since a high-molecular antistatic agent is used as an antistatic agent, it is difficult to bleed from the substrate or the pressure-sensitive adhesive layer. As a result, deterioration of the antistatic function due to aging can be suppressed.

In the above configuration, it is preferable that the adhesive sheet is a flip-chip type semiconductor backing film for forming on the back surface of a semiconductor element flip-chip connected on an adherend. When the adhesive sheet is a film for flip-chip type semiconductor backing, the flip chip type semiconductor backside film is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, at least one of the substrate and the pressure-sensitive adhesive layer contains a polymeric antistatic agent. As a result, the circuit surface of the exposed semiconductor element can be prevented from being destroyed by peeling electrification.

In the above configuration, it is preferable that the substrate has a multilayer structure, and the antistatic agent is contained in the outermost layer of at least one of the substrates of the multilayer structure. When the antistatic agent is contained in the outermost layer of the pressure-sensitive adhesive layer side of the substrate of the multilayer structure, it is possible to suppress both of the charging of the substrate and the pressure-sensitive adhesive layer. When the antistatic agent is contained in the outermost layer of the substrate of the multilayer structure opposite to the pressure-sensitive adhesive layer, peeling electrification between the substrate and the adsorber can be more effectively suppressed.

In the above configuration, it is preferable that an antistatic agent layer containing an antistatic agent is formed on at least one side of the substrate. If an antistatic agent layer is formed on the surface of the substrate on the side of the pressure sensitive adhesive layer, it is possible to suppress both of the charging of the substrate and the pressure sensitive adhesive layer. Further, if the antistatic agent layer is formed on the surface of the substrate opposite to the pressure-sensitive adhesive layer, peeling electrification between the substrate and the adsorber can be more effectively suppressed.

The third aspect of the present invention is a method of manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet described above,

A step of adhering a semiconductor wafer onto the adhesive sheet in the dicing tape-integrated adhesive sheet,

A step of dicing the semiconductor wafer to form a semiconductor element,

And a step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet.

According to the above configuration, the dicing tape-integrated adhesive sheet described above is used. Therefore, a polymeric antistatic agent is contained in at least one of the substrate and the pressure-sensitive adhesive layer. Since the polymeric antistatic agent is contained in at least one of the substrate and the pressure-sensitive adhesive layer, the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device. Further, since a high-molecular antistatic agent is used as an antistatic agent, it is difficult to bleed from the substrate or the pressure-sensitive adhesive layer. As a result, deterioration of the antistatic function due to aging can be suppressed.

The inventors of the present invention have made a study to solve the above-described problems of the prior art. As a result, the present inventors have found that, by setting the value of the surface resistivity on the surface of any one of the adhesive sheets used for manufacturing semiconductor devices within a certain range, It is possible to suppress destruction of the semiconductor device according to the fourth aspect of the present invention.

That is, the adhesive sheet according to the fourth aspect of the present invention is an adhesive sheet used for manufacturing a semiconductor device, and has a surface resistivity value of 1.0 × 10 ¹¹ Ω or less on any one surface.

According to the above configuration, since the surface resistivity of the surface of any one of the adhesive sheets is 1.0 x 10 < ¹¹ > Therefore, the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of picking up, and to improve the reliability as a device when the dicing tape is attached to the dicing tape and used as the dicing tape integral type adhesive sheet.

In the above configuration, it is preferable that the adhesive sheet is a flip-chip type semiconductor backing film for forming on the back surface of a semiconductor element flip-chip connected on an adherend. When the adhesive sheet is a film for flip-chip type semiconductor backing, the flip chip type semiconductor backing film is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, the surface resistivity of any one surface of the flip chip type semiconductor backing film is 1.0 x 10 < ¹¹ > As a result, the circuit surface of the exposed semiconductor element can be prevented from being destroyed by peeling electrification.

In the above configuration, it is preferable that the adhesive sheet contains an antistatic agent. If an antistatic agent is contained in the adhesive sheet, it has antistatic effect even after peeling off from the dicing tape. As a result, even after peeling from the dicing tape, breakage of the semiconductor element by charging can be suppressed.

A dicing tape-integrated adhesive sheet according to a fourth aspect of the present invention is characterized by having a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate and the above-mentioned adhesive sheet, wherein the adhesive sheet is formed on the pressure- do.

According to the above configuration, since the surface resistivity of the surface of any one of the adhesive sheets is 1.0 x 10 < ¹¹ > Therefore, the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

A fourth aspect of the present invention is a method of manufacturing a semiconductor device using the adhesive sheet described above,

A step of preparing a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate,

A step of adhering the adhesive sheet to the pressure-sensitive adhesive layer of the dicing tape to obtain a dicing tape-integrated adhesive sheet,

A step of adhering a semiconductor wafer onto the adhesive sheet in the dicing tape-integrated adhesive sheet,

A step of dicing the semiconductor wafer to form a semiconductor element,

And a step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet.

A fourth aspect of the present invention is a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet described above,

A step of adhering a semiconductor wafer onto the adhesive sheet in the dicing tape-integrated adhesive sheet,

A step of dicing the semiconductor wafer to form a semiconductor element,

And a step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet.

According to the above configuration, the above-described adhesive sheet or the dicing tape-integrated adhesive sheet is used. Therefore, the surface resistivity of any one surface of the adhesive sheet is 1.0 x 10 < ¹¹ > Since the surface resistivity value is 1.0 x 10 < ¹¹ > or less, an antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

A semiconductor device according to a fourth aspect of the present invention is characterized by being manufactured using the above-described adhesive sheet in order to solve the above problems.

A semiconductor device according to a fourth aspect of the present invention is characterized in that it is manufactured by using the dicing tape-integrated adhesive sheet described above in order to solve the above problems.

The inventors of the present invention have made a study to solve the above-mentioned conventional problems, and as a result, it is possible to suppress destruction of a circuit on a semiconductor element by containing a polymeric antistatic agent in an adhesive sheet used for manufacturing a semiconductor device And the present invention has been accomplished.

That is, the adhesive sheet according to the fifth aspect of the present invention is characterized by containing a polymeric type antistatic agent as an adhesive sheet used for manufacturing a semiconductor device.

According to the above configuration, since the adhesive sheet contains the polymer-type antistatic agent, it is difficult to charge. Therefore, the antistatic effect can be exhibited. Further, since a high molecular weight antistatic agent is used as an antistatic agent, it is difficult to bleed from the adhesive sheet. As a result, deterioration of the antistatic function due to aging can be suppressed. Further, since the adhesive sheet contains the polymeric antistatic agent, it has an antistatic effect even after being peeled off from the dicing tape when used as a dicing tape-integrated adhesive sheet adhered to the dicing tape. As a result, even after peeling from the dicing tape, breakage of the semiconductor element by charging can be suppressed.

In the above configuration, it is preferable that the adhesive sheet is a flip-chip type semiconductor backing film for forming on the back surface of a semiconductor element flip-chip connected on an adherend. When the adhesive sheet is a film for flip-chip type semiconductor backing, the flip chip type semiconductor backing film is formed on the back surface of the semiconductor element, and the circuit surface of the semiconductor element is exposed. However, the adhesive sheet contains a polymer-type antistatic agent. As a result, the circuit surface of the exposed semiconductor element can be prevented from being destroyed by peeling electrification.

The dicing tape-integrated adhesive sheet according to the fifth aspect of the present invention is characterized by having a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate and the above-mentioned adhesive sheet, wherein the adhesive sheet is formed on the pressure- do.

According to the above configuration, since the adhesive sheet contains the polymer-type antistatic agent, it is difficult to charge. Therefore, the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device. Further, since a high molecular weight antistatic agent is used as an antistatic agent, it is difficult to bleed from the adhesive sheet. As a result, deterioration of the antistatic function due to aging can be suppressed. Further, since the adhesive sheet contains a polymeric antistatic agent, it has antistatic effect even after peeling off from the dicing tape. As a result, even after peeling from the dicing tape, breakage of the semiconductor element by charging can be suppressed.

A fifth aspect of the present invention is a method of manufacturing a semiconductor device using the adhesive sheet described above,

A step of preparing a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate,

A step of adhering the adhesive sheet to the pressure-sensitive adhesive layer of the dicing tape to obtain a dicing tape-integrated adhesive sheet,

A step of adhering a semiconductor wafer onto the adhesive sheet in the dicing tape-integrated adhesive sheet,

A step of dicing the semiconductor wafer to form a semiconductor element,

And a step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet.

A fifth aspect of the present invention is a method of manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet described above,

A step of adhering a semiconductor wafer onto the adhesive sheet in the dicing tape-integrated adhesive sheet,

A step of dicing the semiconductor wafer to form a semiconductor element,

And a step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet.

According to the above configuration, the above-described adhesive sheet or the dicing tape-integrated adhesive sheet is used. Therefore, since the adhesive sheet contains the polymeric antistatic agent, the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device. Further, since a high molecular weight antistatic agent is used as an antistatic agent, it is difficult to bleed from the adhesive sheet. As a result, deterioration of the antistatic function due to aging can be suppressed. Further, since the adhesive sheet contains a polymeric antistatic agent, it has antistatic effect even after peeling off from the dicing tape. As a result, even after peeling from the dicing tape, breakage of the semiconductor element by charging can be suppressed.

A semiconductor device according to a fifth aspect of the present invention is characterized by being manufactured using the above-described adhesive sheet in order to solve the above problems.

A semiconductor device according to a fifth aspect of the present invention is characterized in that it is manufactured using the dicing tape-integrated adhesive sheet described above in order to solve the above problems.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a cross-sectional schematic diagram of a semiconductor backing film with a dicing tape integral type according to the present embodiment. FIG.
Fig. 2 is a schematic diagram for explaining a method of measuring the peeling electrification voltage.
3 is a cross-sectional schematic diagram of a dicing tape-integrated semiconductor backside film according to another embodiment.
4 is a cross-sectional schematic diagram of a dicing tape-integrated semiconductor backside film according to another embodiment.
5 is a schematic cross-sectional view showing an example of a method of manufacturing a semiconductor device using a dicing tape-integrated semiconductor backing film according to the present embodiment.

<First Invention>

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the first invention will be described with reference to the drawings, but the first invention is not limited to these examples. Hereinafter, the case where the dicing tape-integrated adhesive sheet of the first invention is a dicing tape-integrated semiconductor backside film will be described. That is, the case where the adhesive sheet of the first invention is a film for flip-chip type semiconductor backing will be described. 1 is a schematic cross-sectional view showing an example of a dicing tape-integrated semiconductor backing film according to the present embodiment. Also, in this specification, unnecessary portions are omitted in the drawings, and the drawings are enlarged or reduced in order to facilitate explanation.

(Dicing Tape-integrated Semiconductor Backside Film)

1, the dicing tape-integrated semiconductor backside film 1 comprises a dicing tape 3 having a pressure-sensitive adhesive layer 32 formed on a substrate 31, a flip-chip type pressure-sensitive adhesive layer 32 formed on the pressure- (Hereinafter sometimes referred to as &quot; semiconductor backside film &quot;). 1, the dicing tape-integrated semiconductor backing film according to the first invention of the present invention is formed on the adhesive layer 32 of the dicing tape 3 as a portion corresponding to the adhesive portion of the semiconductor wafer The semiconductor backing film 2 may be formed only on the semiconductor wafer 33. The semiconductor backing film may be formed on the entire surface of the adhesive layer 32 and may be larger than the portion 33 corresponding to the adhesive portion of the semiconductor wafer A film for semiconductor backside may be formed on a portion of the pressure-sensitive adhesive layer 32 that is smaller than the entire surface. The surface of the semiconductor backing film 2 (the surface of the semiconductor backing film 2 that is adhered to the back surface of the wafer) may be protected by a separator or the like for a period of time until it adheres to the back surface of the wafer.

The peel strength of the pressure-sensitive adhesive layer 32 and the adhesive sheet 2 in the peeling test at the peeling speed of 10 m / min and the peeling angle of 150 deg. In the dicing tape-integrated semiconductor backing film 1 is 0.02 to 0.5 N / 20 mm, preferably 0.02 to 0.3 N / 20 mm, and more preferably 0.02 to 0.2 N / 20 mm. Since the peeling force is 0.02 N / 20 mm or more, the semiconductor wafer can be fixed at the time of dicing. Further, since the peeling force is 0.5 N / 20 mm or less, the semiconductor element to which the adhesive sheet 2 is attached easily can be peeled from the pressure-sensitive adhesive layer 32 during pick-up.

Further, in the dicing tape-integrated semiconductor backside film (1), the maximum value of the peeling electrification voltage when the pressure-sensitive adhesive layer (32) and the adhesive sheet (2) are peeled off under the conditions of the peeling test is 0.5 kV or less (-0.5 kV to +0.5 kV), preferably 0.3 kV or less (-0.3 kV to +0.3 kV), and more preferably 0.2 kV or less (-0.2 kV to +0.2 kV). The total value of the peeling electrification voltage when peeling the pressure-sensitive adhesive layer 32 and the adhesive sheet 2 according to the conditions of the peeling test is 0.5 kV or less, so that the antistatic effect can be exhibited. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

Here, a method of measuring the peeling electrification voltage will be described.

Fig. 2 is a schematic structural view for explaining a method of measuring the peeling electrification voltage. First, a dicing tape-integrated semiconductor backing film 1 is bonded to an acrylic plate 100 (thickness: 1 mm, width: 70 mm, length: 100 mm) For the bonding, a hand roller is used and the acrylic plate 100 and the dicing tape 3 are opposed to each other with the double-faced tape interposed therebetween. In this state, it is allowed to stand for one day under an environment of 23 ° C and 50% RH. Next, the acrylic plate 100 to which the dicing tape-integrated semiconductor backing film 1 is bonded is fixed to the sample fixing table 102. Then, the end of the semiconductor backing film 2 is fixed to the automatic winding machine, and peeled off at a peeling angle of 150 deg. And a peeling rate of 10 m / min. A potential meter 104 (manufactured by Kasuga Denshi Co., Ltd.) having a potential at the surface of the dicing tape 3 side (the surface of the pressure-sensitive adhesive layer 32) generated at this time and fixed at a position of 100 mm from the surface of the dicing tape , KSD-0103). The measurement is carried out in an environment of 23 ° C and 50% RH.

In the dicing tape-integrated semiconductor backing film (1), the surface resistivity of the surface of at least one of the substrate (31), the pressure sensitive adhesive layer (32), and the semiconductor backing film (2) Is not more than 1.0 x 10 ¹¹ ?, More preferably not more than 1.0 x 10 ¹⁰ ?, And still more preferably not more than 1.0 x 10 ⁹ ?. The surface resistivity value is preferably as small as possible, but may be, for example, 1.0 x 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, or 1.0 × 10 ⁷ Ω or more. If the surface resistivity is 1.0 x 10 &lt; ¹¹ &gt; or less, it is difficult to charge. Therefore, the antistatic effect can be further exerted. In the first invention, the surface resistivity value of the surface of at least one of the substrate, the pressure-sensitive adhesive layer, and the film for backing the semiconductor means the surface of the substrate on the side of the pressure-sensitive adhesive layer, On the surface of the substrate side of the pressure-sensitive adhesive layer, the surface of the pressure-sensitive adhesive layer opposite to the substrate, the surface of the semiconductor backing film side of the pressure-sensitive adhesive layer side, and the surface of the semiconductor backside film opposite to the pressure- Surface resistivity value. The surface resistivity value refers to a value measured by the method described in Examples.

It is preferable that an antistatic agent is contained in at least one of the base material 31, the pressure-sensitive adhesive layer 32 and the semiconductor backing film 2 in the dicing tape-integrated semiconductor backing film 1.

When the antistatic agent is contained in the base material 31, peeling electrification between the base material 31 and the adsorber can be suppressed when the dicing tape 3 is removed from the adsorption side to which the dicing tape 3 is fixed. Particularly when the substrate 31 has a multilayer structure and the antistatic agent is contained in the outermost layer of the substrate 31 of the multilayer structure on the side of the pressure sensitive adhesive layer 32, both the substrate 31 and the pressure sensitive adhesive layer 32 It is possible to suppress the charging. If an antistatic agent is contained in the outermost layer of the substrate 31 of the multi-layer structure opposite to the pressure-sensitive adhesive layer 32, peeling electrification between the substrate 31 and the adsorber can be more effectively suppressed.

Further, if the pressure sensitive adhesive layer 32 contains an antistatic agent, the peeling electrification when the pressure sensitive adhesive layer 32 and the semiconductor backside film 2 are peeled off can be more effectively suppressed.

Further, if the semiconductor backing film 2 contains an antistatic agent, it has an antistatic effect even after peeling off from the dicing tape 3. [ As a result, even after peeling from the dicing tape 3, breakage of the semiconductor element by charging can be suppressed. Particularly, if the semiconductor backing film 2 has a multilayer structure and the antistatic agent is contained in the outermost layer on the side of the dicing tape 3 in the semiconductor backing film 2 having a multilayer structure, 32 and the semiconductor backing film 2 are peeled off, peeling electrification can be more effectively suppressed.

Examples of the antistatic agent include cationic antistatic agents having cationic functional groups such as quaternary ammonium salts, pyridinium salts, primary, secondary and tertiary amino groups, sulfonic acid salts and sulfuric acid ester salts, phosphonic acid salts and phosphoric acid ester salts An antioxidant type antistatic agent having an anionic functional group, alkylbetaines and derivatives thereof, amphoteric antistatic agents such as imidazolines and derivatives thereof, alanines and derivatives thereof, aminoalcohols and derivatives thereof, glycerin and derivatives thereof, polyethylene glycols and (Ionic conductive antistatic agent) obtained by polymerizing or copolymerizing a monomer having an ion-conductive group of the cationic, anionic, or positive ion type. These compounds may be used alone or in combination of two or more. Among them, a polymer type antistatic agent is preferable. It is difficult to bleed from the base material 31, the pressure-sensitive adhesive layer 32 and the semiconductor backing film 2 by using a polymer-type antistatic agent. As a result, deterioration of the antistatic function due to aging can be suppressed.

Specifically, examples of the cationic antistatic agent include quaternary ammonium groups such as alkyltrimethylammonium salts, acyloylamidopropyltrimethylammonium methosulfate, alkylbenzylmethylammonium salts, acyl chloride choline, polydimethylaminoethyl methacrylate and the like , Styrene copolymers having quaternary ammonium groups such as polyvinylbenzyltrimethylammonium chloride, and diallylamine copolymers having quaternary ammonium groups such as polydiallyldimethylammonium chloride, and the like . These compounds may be used alone or in combination of two or more.

Examples of the anion-type antistatic agent include alkylsulfonic acid salts, alkylbenzenesulfonic acid salts, alkylsulfuric acid ester salts, alkyl ethoxy sulfuric acid ester salts, alkyl phosphoric acid ester salts and sulfonic acid group-containing styrene copolymers. These compounds may be used alone or in combination of two or more.

Examples of positive ion-type antistatic agents include alkyl betaine, alkyl imidazolium betaine, and carbobetaine graft copolymer. These compounds may be used alone or in combination of two or more.

Examples of the nonionic antistatic agent include fatty acid alkylol amide, di (2-hydroxyethyl) alkylamine, polyoxyethylene alkylamine, fatty acid glycerin ester, polyoxyethylene glycol fatty acid ester, sorbitan fatty acid ester, Sorbitan fatty acid esters, polyoxyethylene alkyl phenyl ethers, polyoxyethylene alkyl ethers, polyethylene glycols, polyoxyethylenediamines, polyethers, copolymers comprising polyesters and polyamides, methoxypolyethylene glycol (meth) acrylates And the like. These compounds may be used alone or in combination of two or more.

Other examples of the polymer type antistatic agent include, for example, polyaniline, polypyrrole, and polythiophene.

As the antistatic agent, a conductive material can be mentioned. Examples of the conductive material include tin oxide, antimony oxide, indium oxide, cadmium oxide, titanium oxide, zinc oxide, indium, tin, antimony, gold, silver, copper, aluminum, nickel, chromium, titanium, iron, cobalt, Copper and alloys or mixtures thereof.

The content of the antistatic agent is preferably 50% by weight or less, more preferably 30% by weight or less based on the total resin component of the layer to be added. The content of the antistatic agent is preferably 5% by weight or more, more preferably 10% by weight or more, based on the total resin component of the layer to be added. By incorporating the antistatic agent within the above-described numerical range, the antistatic function can be added without deteriorating the function of the layer to be added. Here, &quot; 50% by weight or less based on the total resin component of the layer to be added &quot; means the following.

(a) When the layer to be added is the substrate 31

In the case where the substrate 31 includes one layer, it means that the total amount of the resin components constituting the substrate 31 is 50% by weight or less.

In the case where the substrate 31 comprises a multilayer structure, it means that the total amount of the resin components constituting one layer of the plurality of layers is 50% by weight or less.

(b) When the layer to be added is the pressure-sensitive adhesive layer 32

Means that the total amount of the resin components constituting the pressure-sensitive adhesive layer 32 is 50% by weight or less.

(c) When the layer to be added is the semiconductor backing film (2)

In the case where the semiconductor backing film 2 comprises one layer, it means 50% by weight or less with respect to the total resin components constituting the backing film 2 for semiconductor.

When the semiconductor backing film 2 comprises a multi-layer structure, it means 50% by weight or less with respect to the total resin components constituting one of the plural layers.

Further, "not more than 30 wt% of all the resin components of the layer to be added", "not less than 5 wt% of all the resin components of the layer to be added", "not less than 10 wt% of the total resin components of the layer to be added" In the case where the substrate, the pressure-sensitive adhesive layer, and the semiconductor backing film include one layer as well as the above, the ratio of the total amount of the resin components constituting the base material, the pressure-sensitive adhesive layer, In the case of including a multilayer structure, it means the ratio of the resin component constituting one of the plurality of layers constituting the base material or the back surface film.

In the dicing tape-integrated semiconductor backing film, an antistatic agent layer containing an antistatic agent may be formed on at least one surface of the substrate. Figs. 3 and 4 are sectional schematic views of a dicing tape-integrated semiconductor backside film according to another embodiment. Fig.

3, the dicing tape-integrated semiconductor backside film 10 comprises a dicing tape 3 having a pressure-sensitive adhesive layer 32 formed on a base material 31, a dicing tape 3 formed on the pressure- And the antistatic agent layer 35 is formed on the surface of the substrate 31 opposite to the pressure-sensitive adhesive layer 32. The anti- Since the antistatic agent layer 35 is formed on the surface of the substrate 31 opposite to the pressure-sensitive adhesive layer 32 in the dicing tape-integrated semiconductor backplane film 10, The peeling electrification can be suppressed more effectively.

4, the dicing tape integral semiconductor backing film 20 includes a dicing tape 3 having a pressure-sensitive adhesive layer 32 formed on a base material 31, a base material 31 and a pressure- An antistatic agent layer 36 formed between the antistatic agent layer 32 and the semiconductor backing film 2 formed on the pressure sensitive adhesive layer 32. [ Since the antistatic agent layer 36 is formed on the surface of the substrate 31 on the side of the pressure sensitive adhesive layer 32 in the dicing tape integral type semiconductor backing film 20, the substrate 31 and the pressure sensitive adhesive layer 32, Can be suppressed.

(Antistatic agent layer)

The antistatic agent layers 35 and 36 are layers containing at least an antistatic agent. The antistatic agent contained in the antistatic agent layers 35 and 36 may be the same antistatic agent as the antistatic agent contained in the substrate 31, the pressure sensitive adhesive layer 32 and the semiconductor backing film 2. In addition to the antistatic agent, the antistatic agent layers 35 and 36 may contain a binder component, a solvent and the like, if necessary.

The thickness of the antistatic agent layers 35 and 36 is preferably 0.01 to 5 占 퐉, and more preferably 0.03 to 1 占 퐉. By making the thickness of the antistatic agent layer 35 and the antistatic agent layer 36 0.01 mu m or more, the antistatic function can be easily exhibited. In addition, by making the thickness of the antistatic agent layer 35 and the antistatic agent layer 36 5 mu m or less, the adhesion performance between the pressure-sensitive adhesive and the substrate can be improved.

The antistatic agent layers 35 and 36 can be formed by applying a solution for forming an antistatic agent layer to the substrate 31 and drying the solution. As a coating method, various coating methods such as spin coating, spray coating, dip coating, screen printing, wire bar coating and the like can be adopted.

(Flip chip type semiconductor backing film)

The semiconductor backing film 2 has a film-like shape. The semiconductor backing film 2 is usually in an uncured state (including a semi-cured state) in the form of a film for semiconductor backing integrated with a dicing tape as a product, And then thermally cured after adhesion (details will be described later).

The film for backside of semiconductor can be formed from a resin composition and can be composed of a resin composition comprising a thermoplastic resin and a thermosetting resin. Further, the film for backside of semiconductor may be composed of a thermoplastic resin composition not using a thermosetting resin, or may be composed of a thermosetting resin composition not using a thermoplastic resin.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, A thermoplastic polyimide resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET (polyethylene terephthalate) or PBT (polybutylene terephthalate) Amide imide resins, fluorine resins and the like. The thermoplastic resins may be used alone or in combination of two or more. Of these thermoplastic resins, acrylic resins and phenoxy resins are suitable, and furthermore, phenoxy resins capable of forming a film while maintaining a high tensile storage elastic modulus are particularly preferable.

The phenoxy resin is not particularly limited, and examples thereof include a resin obtained by reaction of epichlorohydrin and a divalent phenol compound, a resin obtained by a reaction between a divalent epoxy compound and a divalent phenol compound And epoxy resin containing a phenol component as a constituent unit. Examples of the phenoxy resin include bisphenol skeleton (bisphenol A skeleton, bisphenol F skeleton, bisphenol A / F mixed skeleton, bisphenol S skeleton, bisphenol M skeleton, bisphenol P skeleton, bisphenol A / P mixed skeleton, Bisphenol Z skeleton, etc.), a naphthalene skeleton, a norbornene skeleton, a fluorene skeleton, a biphenyl skeleton, an anthracene skeleton, a novolac skeleton, a pyrene skeleton, a xanthan skeleton, an adamantane skeleton, and a dicyclopentadiene skeleton And phenoxy resins having one skeleton. A commercially available phenoxy resin may also be used. The phenoxy resins may be used alone or in combination of two or more.

The acrylic resin is not particularly limited and acrylic resin having a linear or branched alkyl group having 30 or less carbon atoms (preferably 4 to 18 carbon atoms, more preferably 6 to 10 carbon atoms, and particularly preferably 8 or 9 carbon atoms) Or a polymer composed of one or two or more kinds of esters of methacrylic acid. That is, in the first aspect of the present invention, the term "acrylic resin" means broad meaning including methacrylic resin. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, (Lauryl group), a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and the like may be optionally substituted with one or more substituents selected from the group consisting of an alkyl group, an alkenyl group, an alkynyl group, .

The other monomers for forming the acrylic resin (monomers other than acrylic acid or alkyl ester of methacrylic acid having 30 or less carbon atoms in the alkyl group) are not particularly limited and include, for example, acrylic acid, methacrylic acid, Acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid, acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) (Meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl Hydroxyl group-containing monomers such as 12-hydroxylauryl acrylate or (4-hydroxymethylcyclohexyl) -methylacrylate, styrene sulfonic acid, Sulfonic acid group-containing monomers such as sulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate or (meth) acryloyloxynaphthalenesulfonic acid, - phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate and the like. Further, (meth) acrylic acid refers to acrylic acid and / or methacrylic acid, and (meth) in the first invention means the same meaning.

Examples of the thermosetting resin include an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin and a thermosetting polyimide resin in addition to an epoxy resin and a phenol resin. The thermosetting resins may be used alone or in combination of two or more. As the thermosetting resin, an epoxy resin having a small content of ionic impurities, which corrodes semiconductor elements in particular, is suitable. As the curing agent of the epoxy resin, a phenol resin can be suitably used.

Examples of the epoxy resin include, but not limited to, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin , Biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolak type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenyl methane type epoxy resin, tetraphenylol ethane type epoxy resin, etc. Epoxy resin such as bifunctional epoxy resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin can be used.

As the epoxy resin, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin and tetraphenylol ethane type epoxy resin are particularly preferable among the above examples. These epoxy resins are rich in reactivity with a phenol resin as a curing agent and have excellent heat resistance.

The phenolic resin acts as a curing agent for the epoxy resin. Examples of the phenolic resin include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins and nonylphenol novolac resins. Novolak type phenol resins, resole type phenol resins, and polyoxystyrenes such as polyparaxyxystyrene. The phenol resin may be used alone or in combination of two or more. Of these phenolic resins, phenol novolac resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitable is from 0.8 equivalents to 1.2 equivalents. That is, if the mixing ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the epoxy resin cured product tend to deteriorate.

In the first aspect of the present invention, a catalyst for accelerating thermal curing of an epoxy resin and a phenolic resin may be used. The thermosetting-promoting catalyst is not particularly limited and may be suitably selected from known thermosetting-promoting catalysts. The thermosetting promoting catalyst may be used alone or in combination of two or more. As the thermal curing accelerating catalyst, for example, amine-based curing accelerators, phosphorus-based curing accelerators, imidazole-based curing accelerators, boron-based curing accelerators, phosphorus-based curing accelerators and the like can be used.

The amine-based curing accelerator is not particularly limited and includes, for example, monoethanolamine trifluoro borate (manufactured by Stella Chemipa) and dicyandiamide (manufactured by Nacalai Tesque).

The phosphorus hardening accelerator is not particularly limited and examples of the phosphorus hardening accelerator include triorganophosphorus such as triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, (Trade name: TPP-MB), methyltriphenylphosphonium chloride (trade name: TPP-MC), methoxymethyltriphenylphosphonium (trade name: (Trade name: TPP-MOC), benzyltriphenylphosphonium chloride (trade name: TPP-ZC) and the like (all manufactured by Kokagaku Co., Ltd.). The triphenylphosphine-based compound is preferably one which exhibits substantially no decomposition to the epoxy resin. If the epoxy resin is insoluble, it is possible to suppress the excessive progress of the thermosetting. As a thermosetting catalyst having a triphenylphosphine structure and exhibiting substantially no solubility in an epoxy resin, for example, methyltriphenylphosphonium (trade name: TPP-MB) can be exemplified. Means that the thermosetting catalyst comprising a triphenylphosphine-based compound is insoluble in a solvent containing an epoxy resin, and more specifically, it is in a temperature range of 10 to 40 ° C By weight and not more than 10% by weight.

Examples of the imidazole-based curing accelerator include 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11-Z), 2-heptadecylimidazole Methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2-phenyl-4-methylimidazole 2-methylimidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade name: 1B2PZ), 1-cyanoethyl- (Product name: 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl-2-phenylimidazolium trimellitate 2MZ-A), 2,4-diamino-6- (2'-methylimidazolyl- (2'-undecylimidazolyl- (1 ')] - ethyl-s-triazine (trade name: C11Z-A), 2,4-diamino- (1 ')] - ethyl-s-triazine (trade name: 2E4MZ-A), 2,4-diamino-6- [2'-methylimidazole 2-phenyl-4,5-dihydroxymethylimidazole (trade name: 2PHZ-PW), 2 (2'- -Phenyl-4-methyl-5-hydroxymethylimidazole (trade name: 2P4MHZ-PW) and the like (all manufactured by Shikoku Seiko KK).

The boron-based curing accelerator is not particularly limited, and examples thereof include trichloroborane and the like.

The phosphorus-based curing accelerator is not particularly limited and includes, for example, tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name: TPP-MK) Triphenylphosphonium tetraphenylborate (trade name: TPP-ZK), triphenylphosphine triphenylborane (trade name: TPP-S) and the like (all available from Hokokakaku Co., Ltd.).

The proportion of the thermosetting promoting catalyst is preferably 0.01 wt% or more and 20 wt% or less with respect to the total amount of the thermosetting resin. When the above-mentioned proportion of the thermosetting-promoting catalyst is 0.01 wt% or more, even if the semiconductor element flip-chip-connected on the adherend is thin (for example, the thickness is 300 탆 or less, or even 200 탆 or less) can do. By controlling the ratio of the thermosetting accelerating catalyst to 20 wt% or less, it is possible to control the shrinkage amount of the semiconductor backing film to an appropriate size without excessting the shrinkage amount. The lower limit of the above-mentioned ratio of the thermosetting accelerating catalyst is preferably 0.03% by weight or more (more preferably 0.05% by weight or more). The upper limit value is preferably 18% by weight or less (more preferably 15% by weight or less).

The semiconductor backing film is preferably formed of a resin composition containing an epoxy resin and a phenol resin, and more preferably formed of a resin composition comprising an epoxy resin, a phenol resin, and a phenoxy resin.

It is important that the semiconductor backing film 2 has adhesiveness (adhesion) to the back surface (circuit non-formation surface) of the semiconductor wafer. The semiconductor backing film 2 can be formed of, for example, a resin composition containing an epoxy resin as a thermosetting resin. In order to cross-link the semiconductor backing film 2 to some extent in advance, it is preferable to add, as a crosslinking agent, a polyfunctional compound which reacts with functional groups at the molecular chain terminals of the polymer at the time of production. As a result, it is possible to improve the adhesive property under high temperature and to improve the heat resistance.

(For example, 1 N / 10 mm width to 10 N / 10 mm width) of the semiconductor backing film with respect to the semiconductor wafer (23 캜, peeling angle of 180 占 and peeling speed of 300 mm / min) (For example, 2N / 10 mm wide to 10 N / 10 mm wide), more preferably 4 N / 10 mm wide or more (for example, 4 N / 10 mm width to 10 N / 10 mm width or more), it is adhered to the semiconductor wafer or the semiconductor element with excellent adhesiveness, and the occurrence of lifting or the like can be prevented. In addition, it is also possible to prevent chips from falling off during dicing of the semiconductor wafer. The adhesive strength of the semiconductor backing film to the semiconductor wafer is, for example, a value measured in the following manner. That is, an adhesive tape (trade name "BT315" manufactured by Nitto Denko Corporation) is adhered to one side of the film for backside of the semiconductor to reinforce the backside. Thereafter, a semiconductor wafer having a thickness of 0.6 mm and a roller of 2 kg at a temperature of 50 占 폚 are reciprocated on the surface of the semiconductor backing film having a length of 150 mm and a width of 10 mm reinforced on the back side by heat lamination. Thereafter, the mixture is allowed to stand on a hot plate (50 DEG C) for 2 minutes, and then allowed to stand at room temperature (about 23 DEG C) for 20 minutes. After setting, under the condition of a peeling test machine (trade name "Autograph AGS-J" manufactured by Shimadzu Seisakusho) at a temperature of 23 ° C, a peel angle of 180 ° and a tensile rate of 300 mm / min, The backing film is peeled off. The adhesion is a value (N / 10 mm width) measured by peeling at the interface between the semiconductor backing film and the semiconductor wafer at this time.

The crosslinking agent is not particularly limited, and a known crosslinking agent may be used. Specifically, in addition to an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, and a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelating crosslinking agent, a metal salt crosslinking agent, a carbodiimide crosslinking agent, Based crosslinking agents, aziridine-based crosslinking agents, and amine-based crosslinking agents. As the crosslinking agent, an isocyanate crosslinking agent and an epoxy crosslinking agent are suitable. The crosslinking agents may be used alone or in combination of two or more.

Examples of the isocyanate crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate and 1,6-hexamethylene diisocyanate; Alicyclic polyisocyanates such as cyclopentylene diisocyanate, cyclohexylene diisocyanate, isophorone diisocyanate, hydrogenated tolylene diisocyanate and hydrogenated xylene diisocyanate; And aromatic polyisocyanates such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'-diphenylmethane diisocyanate and xylene diisocyanate. In addition, trimethylolpropane / tolyl (Trade name: Coronate L, manufactured by Nippon Polyurethane Kogyo Co., Ltd.), trimethylolpropane / hexamethylene diisocyanate trimer adduct [manufactured by Nippon Polyurethane Coatings Co., Ltd., trade name: Coronate HL &quot; Examples of the epoxy crosslinking agent include N, N, N ', N'-tetraglycidyl-m-xylenediamine, diglycidyl aniline, 1,3-bis Aminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether , Polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethyl (2-hydroxyethyl) isocyanurate, resorcinol diglycidyl ether, diglycidyl glycidyl ether, diglycidyl diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl- In addition to bisphenol-S-diglycidyl ether, And an epoxy resin having two or more epoxy groups in the molecule.

The amount of the crosslinking agent to be used is not particularly limited and can be appropriately selected depending on the degree of crosslinking. Concretely, the amount of the crosslinking agent to be used is generally 7 parts by weight or less (for example, 0.05 part by weight to 7 parts by weight) relative to 100 parts by weight of the polymer component (particularly, the polymer having a functional group at the molecular chain terminal) . If the amount of the cross-linking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesive strength is undesirably low. From the viewpoint of improving the cohesion, the amount of the crosslinking agent is preferably 0.05 part by weight or more based on 100 parts by weight of the polymer component.

In the first invention, it is also possible to carry out a crosslinking treatment by irradiation with an electron beam or an ultraviolet ray, instead of using a crosslinking agent, or using a crosslinking agent.

The semiconductor backside film is preferably colored. As a result, excellent markability and appearance can be exhibited, and a semiconductor device having an external appearance with added value can be obtained. As described above, the colored semiconductor backing film has excellent markability. Therefore, a semiconductor device or a semiconductor device using the semiconductor element is provided with a semiconductor backing film interposed therebetween on the non-circuit surface side of the semiconductor device, The marking is performed, and various kinds of information such as character information and graphic information can be given. Particularly, by controlling the color of the coloring, it is possible to visually recognize information (character information, graphic information, etc.) given by the marking with excellent visibility. Further, since the semiconductor backing film is colored, the dicing tape and the semiconductor backing film can be easily distinguished, and workability and the like can be improved. Further, for example, as a semiconductor device, it is also possible to classify the products by different colors. When the film for a back surface of a semiconductor is colored (when it is colorless and not transparent), the color represented by the coloring is not particularly limited. For example, it is preferably a deep color such as black, blue and red, Suitable.

In the present embodiment, the hypercolor is basically a L * a * b * colorimetric system in which L * is 60 or less (0 to 60) (preferably 50 or less (0 to 50) 40 or less (0 to 40)].

The black color is basically a color having an L * defined by the L * a * b * color system of not more than 35 (0 to 35) (preferably not more than 30 (0 to 30), more preferably not more than 25 To 25)]. In black, a * and b * defined by the L * a * b * colorimetric system can be appropriately selected in accordance with the value of L *, respectively. As a * and b *, for example, it is preferable that both are -10 to 10, more preferably -5 to 5, and particularly preferably -3 to 3 (0 or almost 0 in this case) Do.

In the present embodiment, L *, a *, and b * defined by the L * a * b * colorimetric system are measured using a colorimetric colorimeter (trade name: CR-200, Minolta Co., . The L * a * b * color space is a color space recommended by the International Lighting Committee (CIE) in 1976, and refers to a color space called a CIE1976 (L * a * b *) color space. The L * a * b * color system is specified by JIS Z 8729 in the Japanese Industrial Standard.

When the film for semiconductor backside is colored, a coloring material (coloring agent) can be used depending on the intended color. As such a coloring material, various coloring-based coloring materials such as a black-based coloring material, a blue-based coloring material, and a red-based coloring material can suitably be used, and a black-based coloring material is particularly suitable. As the coloring material, any of pigment, dye and the like may be used. The coloring materials may be used alone or in combination of two or more. As the dye, any type of dye such as an acid dye, a reactive dye, a direct dye, a disperse dye, and a cation dye can be used. Also, the form of the pigment is not particularly limited, and can be suitably selected from known pigments and used.

In particular, when a dye is used as a coloring material, since the dye is dispersed uniformly or almost uniformly in the film for the back surface of a semiconductor, a film for a semiconductor back surface having a uniform or almost uniform coloring density (moreover, An integral semiconductor backside film) can be easily produced. Therefore, when the dye is used as the coloring material, the semiconductor backing film in the dicing tape-integrated semiconductor backing film can make the coloring density uniform or nearly uniform, and can improve the marking property and the appearance.

The black coloring material is not particularly limited, and for example, it can be appropriately selected from inorganic black coloring pigments and black coloring dyes. The black coloring material may be a mixture of coloring materials obtained by mixing a cyan coloring material (cyan coloring material), a magenta coloring material (red coloring material), and a yellow coloring material (yellow coloring material). The black coloring materials may be used alone or in combination of two or more. Of course, the black color material may be used in combination with a color material other than black.

Specific examples of the black-based coloring materials include carbon black (such as carbon black (channel black, channel black, acetylene black, thermal black and lamp black), graphite (graphite), copper oxide, manganese dioxide, azo pigments Etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite and the like), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, Non-organic black pigments, and the like.

In the first invention, as the black-based coloring material, C.I. Solvent Black 3, C.I. Solvent Black 7, C.I. Solvent Black 22, C.I. Solvent Black 27, C.I. Solvent Black 29, C.I. Solvent Black 34, C.I. Solvent Black 43, C.I. Solvent Black 70, C.I. Direct Black 17, C.I. Direct Black 19, C.I. Direct Black 22, C.I. Direct Black 32, C.I. Direct Black 38, C.I. Direct Black 51, C.I. Direct Black 71, C.I. Acid Black 1, C.I. Acid Black 2, C.I. Acid Black 24, C.I. Acid Black 26, C.I. Acid Black 31, C.I. Acid Black 48, C.I. Acid Black 52, C.I. Acid Black 107, C.I. Acid Black 109, C.I. Acid Black 110, C.I. Acid Black 119, C.I. Acid Black 154, C.I. Disperse Black 1, C.I. Disperse Black 3, C.I. Disperse Black 10, C.I. Black-based dyes such as Disperse Black 24; C.I. Pigment Black 1, C.I. And black pigments such as Pigment Black 7 and the like.

Examples of such black-based color materials include "Oil Black BY", "Oil Black BS", trade name "Oil Black HBB", trade name "Oil Black 803", trade name "Oil Black 860" "Oil Black 5906", trade name "Oil Black 5905" (manufactured by Orient Kagaku Kogyo Co., Ltd.), and the like are commercially available.

Examples of the coloring materials other than the black-based coloring materials include cyan-based coloring materials, magenta-based coloring materials, and yellow-based coloring materials. As the cyan coloring material, for example, C.I. Solvent Blue 25, C.I. Solvent Blue 36, C.I. Solvent Blue 60, C.I. Solvent Blue 70, C.I. Solvent Blue 93, C.I. Solvent Blue 95; C.I. Acid Blue 6, C.I. Cyan dyes such as Acid Blue 45; C.I. Pigment Blue 1, C.I. Pigment Blue 2, C.I. Pigment Blue 3, C.I. Pigment Blue 15, C.I. Pigment Blue 15: 1, C.I. Pigment Blue 15: 2, C.I. Pigment Blue 15: 3, C.I. Pigment Blue 15: 4, C.I. Pigment Blue 15: 5, C.I. Pigment Blue 15: 6, C.I. Pigment Blue 16, C.I. Pigment Blue 17, C.I. Pigment Blue 17: 1, C.I. Pigment Blue 18, C.I. Pigment Blue 22, C.I. Pigment Blue 25, C.I. Pigment Blue 56, C.I. Pigment Blue 60, C.I. Pigment Blue 63, C.I. Pigment Blue 65, C.I. Pigment Blue 66; C.I. Bat Blue 4; C.I. Bat Blue 60, C.I. Pigment Green 7 and the like.

In the magenta-based coloring material, examples of the magenta-based dye include C.I. Solvent Red 1, C.I. Solvent Red 3, C.I. Solvent Red 8, C.I. Solvent Red 23, C.I. Solvent Red 24, C.I. Solvent Red 25, C.I. Solvent Red 27, C.I. Solvent Red 30, C.I. Solvent Red 49, C.I. Solvent Red 52, C.I. Solvent Red 58, C.I. Solvent Red 63, C.I. Solvent Red 81, C.I. Solvent Red 82, C.I. Solvent Red 83, C.I. Solvent Red 84, C.I. Solvent Red 100, C.I. Solvent Red 109, C.I. Solvent Red 111, C.I. Solvent Red 121, C.I. Solvent Red 122; C.I. Disperse Red 9; C.I. Solvent Violet 8, C.I. Solvent Violet 13, C.I. Solvent Violet 14, C.I. Solvent Violet 21, C.I. Solvent violet 27; C.I. Disperse Violet 1; C.I. Basic Red 1, C.I. Basic Red 2, C.I. Basic Red 9, C.I. Basic Red 12, C.I. Basic Red 13, C.I. Basic Red 14, C.I. Basic Red 15, C.I. Basic Red 17, C.I. Basic Red 18, C.I. Basic Red 22, C.I. Basic Red 23, C.I. Basic Red 24, C.I. Basic Red 27, C.I. Basic Red 29, C.I. Basic Red 32, C.I. Basic Red 34, C.I. Basic Red 35, C.I. Basic Red 36, C.I. Basic Red 37, C.I. Basic Red 38, C.I. Basic Red 39, C.I. Basic Red 40; C.I. Basic violet 1, C.I. Basic Violet 3, C.I. Basic violet 7, C.I. Basic violet 10, C.I. Basic violet 14, C.I. Basic violet 15, C.I. Basic violet 21, C.I. Basic violet 25, C.I. Basic violet 26, C.I. Basic violet 27, C.I. Basic violet 28 and the like.

In the magenta-based coloring material, as the magenta-based coloring material, for example, C.I. Pigment Red 1, C.I. Pigment Red 2, C.I. Pigment Red 3, C.I. Pigment Red 4, C.I. Pigment Red 5, C.I. Pigment Red 6, C.I. Pigment Red 7, C.I. Pigment Red 8, C.I. Pigment Red 9, C.I. Pigment Red 10, C.I. Pigment Red 11, C.I. Pigment Red 12, C.I. Pigment Red 13, C.I. Pigment Red 14, C.I. Pigment Red 15, C.I. Pigment Red 16, C.I. Pigment Red 17, C.I. Pigment Red 18, C.I. Pigment Red 19, C.I. Pigment Red 21, C.I. Pigment Red 22, C.I. Pigment Red 23, C.I. Pigment Red 30, C.I. Pigment Red 31, C.I. Pigment Red 32, C.I. Pigment Red 37, C.I. Pigment Red 38, C.I. Pigment Red 39, C.I. Pigment Red 40, C.I. Pigment Red 41, C.I. Pigment Red 42, C.I. Pigment Red 48: 1, C.I. Pigment Red 48: 2, C.I. Pigment Red 48: 3, C.I. Pigment Red 48: 4, C.I. Pigment Red 49, C.I. Pigment Red 49: 1, C.I. Pigment Red 50, C.I. Pigment Red 51, C.I. Pigment Red 52, C.I. Pigment Red 52: 2, C.I. Pigment Red 53: 1, C.I. Pigment Red 54, C.I. Pigment Red 55, C.I. Pigment Red 56, C.I. Pigment Red 57: 1, C.I. Pigment Red 58, C.I. Pigment Red 60, C.I. Pigment Red 60: 1, C.I. Pigment Red 63, C.I. Pigment Red 63: 1, C.I. Pigment Red 63: 2, C.I. Pigment Red 64, C.I. Pigment Red 64: 1, C.I. Pigment Red 67, C.I. Pigment Red 68, C.I. Pigment Red 81, C.I. Pigment Red 83, C.I. Pigment Red 87, C.I. Pigment Red 88, C.I. Pigment Red 89, C.I. Pigment Red 90, C.I. Pigment Red 92, C.I. Pigment Red 101, C.I. Pigment Red 104, C.I. Pigment Red 105, C.I. Pigment Red 106, C.I. Pigment Red 108, C.I. Pigment Red 112, C.I. Pigment Red 114, C.I. Pigment Red 122, C.I. Pigment Red 123, C.I. Pigment Red 139, C.I. Pigment Red 144, C.I. Pigment Red 146, C.I. Pigment Red 147, C.I. Pigment Red 149, C.I. Pigment Red 150, C.I. Pigment Red 151, C.I. Pigment Red 163, C.I. Pigment Red 166, C.I. Pigment Red 168, C.I. Pigment Red 170, C.I. Pigment Red 171, C.I. Pigment Red 172, C.I. Pigment Red 175, C.I. Pigment Red 176, C.I. Pigment Red 177, C.I. Pigment Red 178, C.I. Pigment Red 179, C.I. Pigment Red 184, C.I. Pigment Red 185, C.I. Pigment Red 187, C.I. Pigment Red 190, C.I. Pigment Red 193, C.I. Pigment Red 202, C.I. Pigment Red 206, C.I. Pigment Red 207, C.I. Pigment Red 209, C.I. Pigment Red 219, C.I. Pigment Red 222, C.I. Pigment Red 224, C.I. Pigment Red 238, C.I. Pigment Red 245; C.I. Pigment Violet 3, C.I. Pigment Violet 9, C.I. Pigment Violet 19, C.I. Pigment Violet 23, C.I. Pigment Violet 31, C.I. Pigment Violet 32, C.I. Pigment Violet 33, C.I. Pigment Violet 36, C.I. Pigment Violet 38, C.I. Pigment Violet 43, C.I. Pigment Violet 50; C.I. Bat Red 1, Bat Red 2, Bat Red 10, Bat Red 13, Bat Red 15, Bat Red 23, Bat Red 29, Bat Red 35 and the like.

As the yellow-based coloring material, for example, C.I. Solvent Yellow 19, C.I. Solvent Yellow 44, C.I. Solvent Yellow 77, C.I. Solvent Yellow 79, C.I. Solvent Yellow 81, C.I. Solvent Yellow 82, C.I. Solvent Yellow 93, C.I. Solvent Yellow 98, C.I. Solvent Yellow 103, C.I. Solvent Yellow 104, C.I. Solvent Yellow 112, C.I. Yellow dyes such as Solvent Yellow 162; C.I. Pigment Orange 31, C.I. Pigment Orange 43; C.I. Pigment Yellow 1, C.I. Pigment Yellow 2, C.I. Pigment Yellow 3, C.I. Pigment Yellow 4, C.I. Pigment Yellow 5, C.I. Pigment Yellow 6, C.I. Pigment Yellow 7, C.I. Pigment Yellow 10, C.I. Pigment Yellow 11, C.I. Pigment Yellow 12, C.I. Pigment Yellow 13, C.I. Pigment Yellow 14, C.I. Pigment Yellow 15, C.I. Pigment Yellow 16, C.I. Pigment Yellow 17, C.I. Pigment Yellow 23, C.I. Pigment Yellow 24, C.I. Pigment Yellow 34, C.I. Pigment Yellow 35, C.I. Pigment Yellow 37, C.I. Pigment Yellow 42, C.I. Pigment Yellow 53, C.I. Pigment Yellow 55, C.I. Pigment Yellow 65, C.I. Pigment Yellow 73, C.I. Pigment Yellow 74, C.I. Pigment Yellow 75, C.I. Pigment Yellow 81, C.I. Pigment Yellow 83, C.I. Pigment Yellow 93, C.I. Pigment Yellow 94, C.I. Pigment Yellow 95, C.I. Pigment Yellow 97, C.I. Pigment Yellow 98, C.I. Pigment Yellow 100, C.I. Pigment Yellow 101, C.I. Pigment Yellow 104, C.I. Pigment Yellow 108, C.I. Pigment Yellow 109, C.I. Pigment Yellow 110, C.I. Pigment Yellow 113, C.I. Pigment Yellow 114, C.I. Pigment Yellow 116, C.I. Pigment Yellow 117, C.I. Pigment Yellow 120, C.I. Pigment Yellow 128, C.I. Pigment Yellow 129, C.I. Pigment Yellow 133, C.I. Pigment Yellow 138, C.I. Pigment Yellow 139, C.I. Pigment Yellow 147, C.I. Pigment Yellow 150, C.I. Pigment Yellow 151, C.I. Pigment Yellow 153, C.I. Pigment Yellow 154, C.I. Pigment Yellow 155, C.I. Pigment Yellow 156, C.I. Pigment Yellow 167, C.I. Pigment Yellow 172, C.I. Pigment Yellow 173, C.I. Pigment Yellow 180, C.I. Pigment Yellow 185, C.I. Pigment Yellow 195; C.I. Bat Yellow 1, C.I. Bat Yellow 3, C.I. And yellow-based pigments such as Bat Yellow 20 and the like.

Various color materials such as a cyan-based color material, a magenta-based color material, and a yellow-based color material may be used alone or in combination of two or more. When two or more kinds of various coloring materials such as cyan-based coloring material, magenta-based coloring material and yellow-based coloring material are used, the mixing ratio (or blending ratio) of these coloring materials is not particularly limited, and the kind And the like.

When the semiconductor backing film 2 is colored, its coloring form is not particularly limited. For example, the film for the back surface of a semiconductor may be a film of a single layer to which a coloring agent is added. Further, a laminated film in which at least a resin layer formed by at least a thermosetting resin and a coloring agent layer are laminated may also be used. When the semiconductor backing film 2 is a laminated film of a resin layer and a colorant layer, it is preferable that the laminated semiconductor backing film 2 has a laminate structure of a resin layer / a coloring agent layer / a resin layer . In this case, the two resin layers on both sides of the coloring agent layer may be a resin layer having the same composition or a resin layer having a different composition.

The semiconductor backing film (2) can be appropriately mixed with other additives as required. Other additives include, for example, fillers (fillers), flame retardants, silane coupling agents, and ion trap agents, as well as an extender, an antioxidant, an antioxidant, and a surfactant.

As the filler, any of an inorganic filler and an organic filler may be used, but an inorganic filler is suitable. By adding a filler such as an inorganic filler, the semiconductor backing film can be imparted with conductivity, heat conductivity can be improved, and the modulus of elasticity can be controlled. The semiconductor backing film 2 may be either conductive or non-conductive. Examples of the inorganic filler include ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide and silicon nitride, aluminum, copper, silver, gold, nickel, chromium, Zinc, palladium, and solder; alloys; and various other inorganic powders including carbon and the like. The fillers may be used alone or in combination of two or more. As the filler, among them, silica, particularly fused silica, is suitable. The average particle diameter of the inorganic filler is preferably in the range of 0.1 탆 to 80 탆. The average particle diameter of the inorganic filler can be measured by, for example, a laser diffraction type particle size distribution measuring apparatus.

The amount of the filler (particularly inorganic filler) is preferably 80 parts by weight or less (0 parts by weight to 80 parts by weight), more preferably 0 parts by weight to 70 parts by weight, based on 100 parts by weight of the organic resin component.

Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. The flame retardant may be used alone or in combination of two or more. Examples of the silane coupling agent include, for example,? - (3,4-epoxycyclohexyl) ethyltrimethoxysilane,? -Glycidoxypropyltrimethoxysilane,? -Glycidoxypropylmethyldiethoxysilane, . The silane coupling agents may be used alone or in combination of two or more. Examples of the ion trap agent include hydrotalcites and bismuth hydroxide. The ion trap agent may be used alone or in combination of two or more.

The semiconductor backing film 2 is obtained by mixing a thermosetting resin such as an epoxy resin and a thermoplastic resin such as a phenoxy resin or an acrylic resin as necessary and a solvent or other additives as required, And then forming the film in a film-like layer. Specifically, for example, the resin composition is applied onto the pressure-sensitive adhesive layer 32 of the dicing tape, and the resin composition is applied onto a suitable separator (release paper or the like) to form a resin layer (or adhesive layer) (Adhesive layer) as a semiconductor backing film can be formed by, for example, a method of transferring (adhering) this onto the pressure-sensitive adhesive layer 32 or the like. The resin composition may be a solution or a dispersion.

When the semiconductor backing film 2 is formed of a resin composition containing a thermosetting resin such as an epoxy resin, the backing film of semiconductor is not cured or hardened at the stage before application to a semiconductor wafer. This is a state of partial curing. In this case, the thermosetting resin in the film for backside of the semiconductor is completely or almost completely cured after the application to the semiconductor wafer (specifically, when the sealing material is cured in the flip chip bonding step in general).

As described above, even though the film for backside of a semiconductor contains a thermosetting resin, since the thermosetting resin is in an uncured or partially cured state, the gel fraction of the film for backside of the semiconductor is not particularly limited, (0 wt.% To 30 wt.%), Particularly preferably 10 wt.% Or less (0 wt.% To 10 wt.%) . The method for measuring the gel fraction of the film for semiconductor backside can be measured by the following measuring method.

<Method of measuring gel fraction>

Approximately 0.1 g of the semiconductor backing film was sampled and quenched (weight of the sample), and the sample was surrounded by the mesh sheet, and then immersed in about 50 ml of toluene at room temperature for 1 week. Thereafter, the solvent insoluble matter (the content of the mesh sheet) was taken out of toluene and dried at 130 ° C for about 2 hours to measure the solvent insoluble matter after drying (weight after immersion and drying) (% By weight).

<Formula a>

Gel fraction (% by weight) = [(weight after immersion · after drying) / (weight of sample)] × 100

The gel fraction of the film for backside of semiconductor can be controlled by heating temperature, heating time, etc. in addition to the kind and content of the resin component and the kind and content of the crosslinking agent.

In the first aspect of the present invention, in the case of a film-like material formed by a resin composition comprising a thermosetting resin such as an epoxy resin, the film for backing a semiconductor can effectively exhibit adhesion to a semiconductor wafer.

Further, in the dicing step of the semiconductor wafer, the semiconductor backing film absorbs moisture in view of the use of cutting water, resulting in a water content higher than that in the state. When flip-chip bonding is performed with such a high moisture content, water vapor is stored at the bonding interface between the semiconductor backside film 2 and the semiconductor wafer or the processed body (semiconductor), and lifting may occur. Therefore, as the film for back surface of semiconductor, when the core material having high moisture permeability is formed on both sides, water vapor diffuses, and such a problem can be avoided. From this point of view, a multilayer structure in which the semiconductor backing film 2 is formed on one side or both sides of the core material may be used as a film for backside of semiconductor. The core material may be a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film or the like), a resin substrate reinforced with glass fiber or non- A substrate or a glass substrate.

Thickness of the semiconductor backing film 2 (total thickness in the case of a laminated film) is not particularly limited, but can be appropriately selected from the range of about 2 탆 to 200 탆, for example. The thickness is preferably about 4 탆 to 160 탆, more preferably about 6 탆 to 100 탆, and particularly preferably about 10 탆 to 80 탆.

The tensile storage elastic modulus at 23 DEG C in the uncured state of the semiconductor backing film 2 is preferably 1 GPa or more (for example, 1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly 3 GPa or more Is suitable. When the tensile storage modulus is 1 GPa or more, the semiconductor element is peeled from the pressure-sensitive adhesive layer 32 of the dicing tape together with the semiconductor backing film 2, and then the semiconductor backing film 2 is placed on the support, , It is possible to effectively suppress or prevent the film for semiconductor backing from adhering to the support. The support member refers to, for example, a top tape or a bottom tape on a carrier tape. When the semiconductor backing film 2 is formed of a resin composition containing a thermosetting resin, as described above, since the thermosetting resin is usually in a state of uncured or partially cured, The elastic modulus at 20 deg. C usually becomes the elastic modulus at 23 deg. C in the uncured or partially cured state of the thermosetting resin.

Here, the semiconductor backing film 2 may be a single layer or a laminated film in which a plurality of layers are laminated. However, in the case of the laminated film, the tensile storage elastic modulus at 23 DEG C in the uncured state is preferably 1 GPa or more (For example, 1 GPa to 50 GPa). The tensile storage modulus (23 deg. C) in the uncured state of the semiconductor backing film is controlled by controlling the type and content of the resin component (thermoplastic resin, thermosetting resin), the kind of filler such as silica filler, can do. In the case where the semiconductor backing film 2 is a laminated film in which a plurality of layers are laminated (in the case where the film for backside of semiconductor has a laminated form), for example, the lamination of the wafer bonding layer and the laser mark layer And a lamination method including the above. Further, another layer (an intermediate layer, a light blocking layer, a reinforcing layer, a colored layer, a base layer, an electromagnetic wave shielding layer, a thermally conductive layer, an adhesive layer, or the like) may be formed between the wafer adhesive layer and the laser mark layer. The wafer bonding layer is a layer that exhibits excellent adhesion (adhesiveness) to the wafer, and is a layer that contacts the back surface of the wafer. On the other hand, the laser mark layer is a layer that exhibits excellent laser markability and is a layer used for performing laser marking on the back surface of a semiconductor element.

The tensile storage elastic modulus was measured by using a dynamic viscoelasticity measuring device "Solid Analyzer RS A2" manufactured by Rheometrics Co., Ltd. (thickness: (23 占 폚) under a nitrogen atmosphere in a tensile mode at a frequency of 1 Hz and a temperature raising rate of 10 占 폚 / min in a sample width of 10 mm, a sample length of 22.5 mm, and a sample thickness of 0.2 mm. To determine the value of the obtained tensile storage modulus.

It is preferable that at least one surface of the semiconductor backing film 2 is protected by a separator (release liner) (not shown). For example, in the case of the semiconductor backing film 1 integrated with a dicing tape, the separator may be provided on only one side of the semiconductor backing film. In the case of the semiconductor backing film not integrated with the dicing tape, The separator may be provided on one side or both sides of the backing film. The separator has a function as a protective material for protecting the semiconductor backing film until it is put to practical use. In the case of the semiconductor backing film 1 integrated with a dicing tape, the separator can also be used as a supporting substrate for transferring the semiconductor backing film 2 to the pressure-sensitive adhesive layer 32 on the base material of the dicing tape have. The separator is peeled off when the semiconductor wafer is attached onto the film for semiconductor backside. As the separator, a plastic film (polyethylene terephthalate or the like) or a paper surface-coated with a releasing agent such as polyethylene, polypropylene, a fluorine-based releasing agent and a long-chain alkyl acrylate-based releasing agent can be used. The separator can be formed by a conventionally known method. The thickness of the separator is not particularly limited.

The light transmittance (visible light transmittance) of visible light (wavelength: 400 nm to 800 nm) in the semiconductor backing film 2 is not particularly limited, but may be, for example, 20% , More preferably not more than 10% (0% to 10%), particularly preferably not more than 5% (0% to 5%). If the visible light transmittance of the semiconductor backing film (2) is larger than 20%, the semiconductor device may be adversely affected by light ray passing. The visible light transmittance (%) can be controlled by the type and content of the resin component of the semiconductor backing film 2, the kind and content of the coloring agent (pigment or dye), the content of the inorganic filler, and the like.

The visible light transmittance (%) of the semiconductor backing film 2 can be measured in the following manner. That is, a single semiconductor backing film 2 having a thickness (average thickness) of 20 μm is produced. Subsequently, visible light (apparatus: visible light generating device manufactured by Shimadzu Seisakusho Co., Ltd., trade name "ABSORPTION SPECTRO PHOTOMETER") having a wavelength of 400 nm to 800 nm was irradiated to the semiconductor backside film 2 with a predetermined intensity, The intensity of the transmitted visible light is measured. Further, the value of the visible light transmittance can be obtained from the change in strength before and after transmission of the visible light through the semiconductor backside film 2. The visible light transmittance of the semiconductor backing film 2 (thickness: 20 占 퐉) was measured by the value of the visible light transmittance (%: wavelength: 400 nm to 800 nm) of the semiconductor backing film 2 %; Wavelength: 400 nm to 800 nm) can be derived. In the first invention, the visible light transmittance (%) in the case of the semiconductor backing film 2 having a thickness of 20 μm is determined. However, the semiconductor backing film according to the first invention is limited to a thickness of 20 μm It is not intended to be.

Further, as the semiconductor backing film 2, it is preferable that the moisture absorption rate is low. Specifically, the moisture absorption rate is preferably 1% by weight or less, and more preferably 0.8% by weight or less. By setting the moisture absorption rate to 1 wt% or less, the laser marking property can be improved. In addition, for example, in the reflow process, it is also possible to suppress or prevent the generation of voids between the semiconductor backing film 2 and the semiconductor element. The moisture absorption rate is a value calculated according to the change in weight before and after the film for semiconductor backside 2 is left standing for 168 hours in an atmosphere at a temperature of 85 캜 and a relative humidity of 85% RH. When the semiconductor backing film 2 is formed of a resin composition containing a thermosetting resin, the moisture absorption rate is preferably set to 168 hours for a film for semiconductor backside after thermosetting in an atmosphere at a temperature of 85 DEG C and a relative humidity of 85% RH Means the value when left untreated. The moisture absorption rate can be adjusted by changing the addition amount of the inorganic filler, for example.

As the semiconductor backing film 2, it is preferable that the ratio of the volatile content is small. Concretely, the weight reduction ratio (weight reduction ratio) of the semiconductor backing film 2 after the heat treatment is preferably 1% by weight or less, more preferably 0.8% by weight or less. The conditions of the heat treatment are, for example, a heating temperature of 250 占 폚 and a heating time of 1 hour. By setting the weight reduction ratio to 1 wt% or less, laser markability can be improved. Further, for example, in the reflow process, occurrence of cracks in the flip chip type semiconductor device can be suppressed or prevented. The weight reduction rate can be adjusted, for example, by adding an inorganic material capable of reducing the generation of cracks in the lead-free solder reflow. When the semiconductor backing film 2 is formed of a resin composition comprising a thermosetting resin, the weight reduction ratio is preferably set such that the film for semiconductor backing after thermosetting is heated at a heating temperature of 250 DEG C and a heating time of 1 hour Means the value when heated.

(Dicing tape)

The dicing tape 3 is constituted by forming a pressure-sensitive adhesive layer 32 on a base material 31. As described above, the dicing tape 3 only needs to have a structure in which the base material 31 and the pressure-sensitive adhesive layer 32 are laminated. The substrate (support substrate) can be used as a support matrix such as a pressure-sensitive adhesive layer. It is preferable that the base material 31 has radiation transmittance. As the base material 31, for example, an earth base material such as paper; Fiber-based materials such as cloth, nonwoven fabric, felt, and net; Metal base materials such as metal foil and metal plate; Plastic-based substrates such as plastic films and sheets; Rubber base materials such as rubber sheets; A foam such as a foamed sheet, or a laminate of such a laminate (particularly, a laminate of a plastic substrate and a substrate or a laminate of plastic films (or sheets)). In the first aspect of the present invention, a plastic substrate such as a plastic film or sheet can be suitably used as the substrate. Examples of the material for the plastic material include olefin resins such as polyethylene (PE), polypropylene (PP) and ethylene-propylene copolymer; Copolymers containing ethylene as a monomer component such as ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer and ethylene- (meth) acrylic acid ester (random, alternating) copolymer; Polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resins such as polyamide (nylon) and all-aromatic polyamide (aramid); Polyetheretherketone (PEEK); Polyimide; Polyetherimide; Polyvinylidene chloride; ABS (acrylonitrile butadiene styrene copolymer); Cellulose based resin; Silicone resin; Fluorine resin and the like.

As the material of the substrate 31, a polymer such as a crosslinked product of the resin may be mentioned. The above-mentioned plastic film may be used in the non-stretched state, or in the case where it is subjected to the uniaxial or biaxial stretching treatment, if necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area of the pressure-sensitive adhesive layer 32 and the semiconductor backside film 2 is lowered by thermally shrinking the base material 31 after dicing, Thereby facilitating the operation.

The surface of the base material 31 may be chemically or physically treated such as an ordinary surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage exposure, and ionizing radiation treatment to improve the adhesion with the adjacent layer, Treatment, and coating treatment with a primer (for example, an adhesive material to be described later).

As the base material (31), homogeneous or heterogeneous materials may be appropriately selected and used, and if necessary, several kinds of materials may be blended. In order to impart antistatic performance to the substrate 31, a vapor deposition layer of a conductive material having a thickness of about 30 to 500 Å, which includes a metal, an alloy, oxides, etc., can be formed on the substrate 31 have. The substrate 31 may be a single layer or two or more layers.

The thickness of the base material 31 (total thickness in the case of a laminate) is not particularly limited and may be appropriately selected according to strength, flexibility, use purpose and the like. For example, it is generally 1000 탆 or less To 1000 占 퐉), preferably 10 占 퐉 to 500 占 퐉, more preferably 20 占 퐉 to 300 占 퐉, particularly 30 占 퐉 to 200 占 퐉, but is not limited thereto.

The base material 31 may contain various additives (coloring agents, fillers, plasticizers, antioxidants, antioxidants, surfactants, flame retardants, etc.) within a range not to impair the effects of the first aspect of the present invention.

The pressure-sensitive adhesive layer (32) is formed of a pressure-sensitive adhesive and has adhesiveness. The pressure-sensitive adhesive is not particularly limited and may be appropriately selected from known pressure-sensitive adhesives. Specific examples of the pressure-sensitive adhesive include acrylic pressure-sensitive adhesives, rubber pressure-sensitive adhesives, vinyl alkyl ether pressure-sensitive adhesives, silicone pressure-sensitive adhesives, polyester pressure-sensitive adhesives, polyamide pressure-sensitive adhesives, urethane pressure-sensitive adhesives, fluorine- Known pressure-sensitive adhesives such as a creep property improving adhesive compounded with a hot-meltable resin having a melting point of about 200 DEG C or lower (for example, JP-B-56-61468, JP-A-61-174857, For example, JP-A-63-17981, JP-A-56-13040, and the like). As the pressure-sensitive adhesive, a radiation-curable pressure-sensitive adhesive (or energy ray curable pressure-sensitive adhesive) or a heat-expandable pressure-sensitive adhesive may be used. The pressure-sensitive adhesives can be used alone or in combination of two or more.

As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive can be preferably used, and an acrylic pressure-sensitive adhesive is particularly suitable. As the acrylic pressure-sensitive adhesive, acrylic pressure-sensitive adhesives using an acrylic polymer (homopolymer or copolymer) using one or two or more of (meth) acrylic acid alkyl esters as a monomer component as a base polymer can be mentioned.

Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, butyl (Meth) acrylate, octyl (meth) acrylate, isobutyl (meth) acrylate, isobutyl (meth) acrylate, (Meth) acrylate, decyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isonyl (Meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (Meth) And the like can be mentioned methacrylic acid, such as eicosyl (meth) acrylic acid alkyl ester. As the (meth) acrylic acid alkyl ester, a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group is suitable. The alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.

The acrylic polymer may contain a unit corresponding to another monomer component (copolymerizable monomer component) copolymerizable with the alkyl (meth) acrylate ester, for the purpose of modifying the cohesive force, heat resistance and crosslinkability . Examples of such copolymerizable monomer components include carboxyl group-containing monomers such as (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid; Monomers containing acid anhydride groups such as maleic anhydride and itaconic anhydride; (Meth) acrylate, hydroxypropyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxyhexyl ) Hydroxyl group-containing monomers such as hydroxylauryl acrylate and (4-hydroxymethylcyclohexyl) methyl methacrylate; Containing sulfonic acid group such as styrene sulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; (Meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol -Substituted) amide-based monomer; (Meth) acrylic acid aminoalkyl monomers such as aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate and t-butylaminoethyl (meth) acrylate; (Meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; Cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; An epoxy group-containing acrylic monomer such as glycidyl (meth) acrylate; Styrene-based monomers such as styrene and? -Methylstyrene; Vinyl ester monomers such as vinyl acetate and vinyl propionate; Olefinic monomers such as isoprene, butadiene and isobutylene; Vinyl ether-based monomers such as vinyl ether; Vinylpyrrolidone, vinylpyrrolidone, vinylpyridine, vinylpiperidone, vinylpyrimidine, vinylpiperazine, vinylpyrazine, vinylpyrrole, vinylimidazole, vinyloxazole, vinylmorpholine, N-vinyl Nitrogen-containing monomers such as carboxylic acid amides and N-vinylcaprolactam; Maleimide-based monomers such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide and N-phenylmaleimide; N-diisopropylethylenediamine, N-methylethylenediamine, N-methylethylenediamine, N-methylethylenediamine, N-methylethylenediamine, N-methylethylenediamine, Itaconimide-based monomers such as N, N-lauryl itaconimide; (Meth) acryloyloxymethylenesuccinimide, N- (meth) acryloyl-6-oxyhexamethylenesuccinimide, N- (meth) acryloyl-8- Succinimide monomer; Glycol acrylate monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol and (meth) acrylic acid methoxypolypropylene glycol; Acrylate monomer having a heterocycle such as tetrahydrofurfuryl (meth) acrylate, fluorine (meth) acrylate or silicone (meth) acrylate, halogen atoms, silicon atoms and the like; (Meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, (poly) ethylene glycol di (Meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene , Butyl di (meth) acrylate, hexyl di (meth) acrylate, and the like. These copolymerizable monomer components may be used alone or in combination of two or more.

When a radiation-curable pressure-sensitive adhesive (or an energy ray curable pressure-sensitive adhesive) is used as the pressure-sensitive adhesive, a radiation-curing pressure-sensitive adhesive (composition) may be a pressure-sensitive adhesive containing a polymer having, for example, a radical reactive carbon-carbon double bond at the polymer side chain, A radiation curable pressure sensitive adhesive containing an ultraviolet curable monomer component or an oligomer component in the pressure sensitive adhesive, and the like. When a heat-expandable pressure-sensitive adhesive is used as the pressure-sensitive adhesive, examples of the heat-expandable pressure-sensitive adhesive include a heat-expandable pressure-sensitive adhesive including a pressure-sensitive adhesive and a foaming agent (particularly a thermally expandable microsphere).

In the first invention, the pressure-sensitive adhesive layer 32 may contain various additives (for example, a tackifier resin, a colorant, a thickener, an extender, a filler, a plasticizer, an antioxidant, An antioxidant, a surfactant, a cross-linking agent, etc.).

The crosslinking agent is not particularly limited, and a known crosslinking agent may be used. Specific examples of the crosslinking agent include crosslinking agents such as isocyanate crosslinking agents, epoxy crosslinking agents, melamine crosslinking agents and peroxide crosslinking agents, urea crosslinking agents, metal alkoxide crosslinking agents, metal chelating crosslinking agents, metal salt crosslinking agents, carbodiimide crosslinking agents, oxazolines Based cross-linking agent, an aziridine-based cross-linking agent, and an amine-based cross-linking agent, and isocyanate-based cross-linking agents and epoxy-based cross-linking agents are suitable. The crosslinking agent may be used alone or in combination of two or more. The amount of the crosslinking agent to be used is not particularly limited.

Examples of the isocyanate crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate and 1,6-hexamethylene diisocyanate; Alicyclic polyisocyanates such as cyclopentylene diisocyanate, cyclohexylene diisocyanate, isophorone diisocyanate, hydrogenated tolylene diisocyanate and hydrogenated xylene diisocyanate; And aromatic polyisocyanates such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'-diphenylmethane diisocyanate and xylene diisocyanate. In addition, trimethylolpropane / tolyl (Trade name: Coronate L, manufactured by Nippon Polyurethane Kogyo Co., Ltd.), trimethylolpropane / hexamethylene diisocyanate trimer adduct [manufactured by Nippon Polyurethane Coatings Co., Ltd., trade name: Coronate HL &quot; Examples of the epoxy crosslinking agent include N, N, N ', N'-tetraglycidyl-m-xylenediamine, diglycidyl aniline, 1,3-bis Aminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether , Polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethyl (2-hydroxyethyl) isocyanurate, resorcinol diglycidyl ether, diglycidyl glycidyl ether, diglycidyl diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl- In addition to bisphenol-S-diglycidyl ether, And an epoxy resin having two or more epoxy groups in the molecule.

In the first invention, it is also possible to carry out a crosslinking treatment by irradiation with an electron beam or an ultraviolet ray, instead of using a crosslinking agent or using a crosslinking agent.

The pressure-sensitive adhesive layer 32 can be formed by using a publicly known method in which a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives are mixed and formed into a sheet-like layer. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent or other additives to the substrate 31, a method of applying the mixture to a suitable separator (release paper or the like) The pressure sensitive adhesive layer 32 can be formed by a method of forming a pressure sensitive adhesive layer 32 on the substrate 31 and transferring (attaching) the pressure sensitive adhesive layer 32 onto the substrate 31.

The thickness of the pressure-sensitive adhesive layer 32 is not particularly limited and may be, for example, from 5 탆 to 300 탆 (preferably from 5 탆 to 200 탆, more preferably from 5 탆 to 100 탆, ). When the thickness of the pressure-sensitive adhesive layer 32 is within the above-mentioned range, appropriate adhesive force can be exerted. Further, the pressure-sensitive adhesive layer 32 may be either a single layer or a multi-layer.

The adhesive force (23 DEG C, peeling angle 180 DEG, peeling speed 300 mm / min) of the pressure sensitive adhesive layer 32 of the dicing tape 3 to the semiconductor backing film 2 was 0.02 N / 20 mm to 10 N / Mm is preferable, and a range of 0.05 N / 20 mm to 5 N / 20 mm is more preferable. By setting the adhesive force to 0.02 N / 20 mm or more, it is possible to prevent chip breakage of the semiconductor element during dicing of the semiconductor wafer. On the other hand, by setting the adhesive force to 10 N / 20 mm or less, it is possible to prevent the peeling of the semiconductor element from occurring or the occurrence of adhesive residue when picking up the semiconductor element.

The semiconductor backing film 2 and the dicing tape-integrated semiconductor backing film 1 may be formed into a roll-wound form or a laminate of sheets (films). For example, in the case of having a roll-like shape, the laminate of the semiconductor backing film 2 or the semiconductor backing film 2 and the dicing tape 3 is protected with a separator if necessary , The film can be formed as a semiconductor backing film 2 or a dicing tape-integrated semiconductor backing film 1 in the form of a rolled-up state or shape. The semiconductor backing film 1 with a dicing tape integral type in a rolled state or in the form of a roll includes a base material 31, a pressure-sensitive adhesive layer 32 formed on one side of the base material 31, (Back surface treatment layer) formed on the other surface of the base material 31. In this case,

The thickness of the dicing tape-integrated semiconductor backside film 1 (thickness of the semiconductor backside film and total thickness of the dicing tape including the base material 31 and the pressure-sensitive adhesive layer 32) It may be selected in the range of 8 탆 to 1500 탆, preferably 20 탆 to 850 탆 (more preferably 31 탆 to 500 탆, particularly preferably 47 탆 to 330 탆).

The ratio of the thickness of the semiconductor backing film 2 to the thickness of the pressure sensitive adhesive layer 32 of the dicing tape 3 and the thickness of the semiconductor backing film 2 And the thickness of the dicing tape 3 (the total thickness of the substrate 31 and the pressure-sensitive adhesive layer 32), the dicing property in the dicing step, the pick-up property in the pick- And the dicing tape-integrated semiconductor backside film 1 can be effectively used during the dicing process of a semiconductor wafer or the flip chip bonding process of a semiconductor device (for example, a semiconductor chip).

(Method for Manufacturing Dicing Tape-Integrated Semiconductor Backside Film)

The method for producing a semiconductor backing film with a dicing tape integral type according to the present embodiment will be described with reference to the dicing tape-integrated semiconductor backing film 1 shown in Fig. 1 as an example. First, the base material 31 can be formed by a conventionally known film-forming method. At this time, when an antistatic agent is contained in the base material 31, an antistatic agent is appropriately added to the base material. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a co-extrusion method, a dry lamination method and the like.

Next, a pressure-sensitive adhesive composition is applied on the base material 31, dried (if necessary, heated and crosslinked), and a pressure-sensitive adhesive layer 32 is formed. At this time, when an antistatic agent is contained in the pressure sensitive adhesive layer 32, an antistatic agent is appropriately added to the pressure sensitive adhesive composition. Examples of the coating method include roll coating, screen coating, gravure coating and the like. The pressure-sensitive adhesive layer composition may be directly applied to the substrate 31 to form the pressure-sensitive adhesive layer 32 on the substrate 31. Alternatively, the pressure-sensitive adhesive composition may be applied to a release paper or the like, The pressure-sensitive adhesive layer 32 may be transferred onto the base material 31. In this case, Thus, the dicing tape 3 having the pressure-sensitive adhesive layer 32 formed on the substrate 31 is produced.

On the other hand, the forming material for forming the semiconductor backing film 2 is coated on the release paper so that the thickness after drying becomes a predetermined thickness, and dried under predetermined conditions (for example, when heat curing is required, Followed by drying) to form a coated layer. At this time, when an antistatic agent is contained in the semiconductor backing film 2, an antistatic agent is appropriately added to the forming material for forming the semiconductor backing film 2. The application layer is transferred onto the pressure-sensitive adhesive layer 32 to form the semiconductor backing film 2 on the pressure-sensitive adhesive layer 32. Further, a forming material for forming the semiconductor backing film 2 is directly applied on the pressure-sensitive adhesive layer 32, and then dried under predetermined conditions (for example, when heat curing is required, a heat treatment is performed if necessary Dried), the semiconductor backing film 2 can be formed on the pressure-sensitive adhesive layer 32 as well. When the semiconductor backing film 2 has a multilayer structure and an antistatic agent is contained in either outermost layer, it is preferable to form the pressure-sensitive adhesive layer 32 on the outermost layer containing the antistatic agent. Thus, the dicing tape-integrated semiconductor backside film 1 according to the first invention can be obtained. In the case of thermally curing when forming the semiconductor backing film 2, it is important to thermally cure the film to such an extent that it is in a partially cured state, but preferably it is not thermally cured.

The dicing tape-integrated semiconductor backside film (1) of the first invention of the present invention can be suitably used in manufacturing a semiconductor device having a flip chip bonding process. That is, the dicing tape-integrated semiconductor backside film 1 of the first invention of the present invention is used for manufacturing a semiconductor device for flip chip mounting, and the dicing tape-integrated semiconductor backside film 1 is formed on the back surface of the semiconductor element, A semiconductor device for flip chip mounting is manufactured in a state or form in which the semiconductor backing film 2 is adhered. Therefore, the dicing tape-integrated semiconductor backside film 1 of the first invention is a semiconductor device for flip chip mounting (a semiconductor device in which a semiconductor element is fixed to an adherend such as a substrate by a flip chip bonding method, ).

(Semiconductor wafer)

The semiconductor wafer is not particularly limited as far as it is a known semiconductor wafer, and can be appropriately selected from semiconductor wafers of various kinds of materials. In the first invention, a silicon wafer can be suitably used as the semiconductor wafer.

(Manufacturing Method of Semiconductor Device)

A method of manufacturing a semiconductor device according to a first aspect of the present invention includes the steps of adhering a semiconductor wafer onto an adhesive sheet in the dicing tape-integrated adhesive sheet; dicing the semiconductor wafer to form a semiconductor element; And a step of picking up the element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet.

In particular, in the case where the adhesive sheet of the first invention is a film for semiconductor backing, the manufacturing method of the semiconductor device includes a step of adhering the back surface of the semiconductor wafer onto the dicing tape-integrated semiconductor backing film, A step of dicing, a step of picking up a semiconductor element obtained by dicing, and a step of flip-chip bonding the semiconductor element on an adherend.

Hereinafter, a method of manufacturing the semiconductor device according to the present embodiment will be described with reference to FIG. 5 is a schematic cross-sectional view showing an example of a method of manufacturing a semiconductor device using the dicing tape-integrated semiconductor backing film 1 according to the present embodiment.

[Mounting process]

5 (a), a separator optionally disposed on the semiconductor backing film 2 of the semiconductor backing film 1 with a dicing tape-integrated semiconductor is appropriately peeled off, And the semiconductor wafer 4 is adhered and fixed thereto (mounting step). At this time, the semiconductor backing film 2 is in an uncured state (including a semi-cured state). Further, the semiconductor backing film 1 with the dicing tape integral type is adhered to the back surface of the semiconductor wafer 4. The back surface of the semiconductor wafer 4 means a surface opposite to the circuit surface (also referred to as a non-circuit surface, a non-electrode surface, or the like). The adhesion method is not particularly limited, but a pressure bonding method is preferable. The pressing is usually carried out while being pressed by a pressing means such as a pressing roll.

[Dicing process]

Next, as shown in FIG. 5 (b), the semiconductor wafer 4 is diced. As a result, the semiconductor wafer 4 is cut to a predetermined size and fragmented (small-sized) to manufacture a semiconductor chip 5 as a semiconductor element. The dicing is performed in accordance with a conventional method on the circuit surface side of the semiconductor wafer 4 in a state in which the dicing tape 3 is vacuum-adsorbed on the adsorption table 110. Further, in this step, for example, a cutting method called a full cut which infeeds up to the dicing tape-integrated semiconductor backing film 1 can be adopted. The dicing apparatus used in the present step is not particularly limited and conventionally known dicing apparatuses can be used. Further, since the semiconductor wafer 4 is adhered and fixed to the dicing tape-integrated semiconductor backing film 1 having the semiconductor backside film with better adhesion, chip dropout and chip dropout can be suppressed, So that breakage of the wafer 4 can be suppressed. If the semiconductor backing film 2 is formed of a resin composition containing an epoxy resin, even if the semiconductor backing film 2 is cut by dicing, the pressure-sensitive adhesive of the adhesive layer of the semiconductor backing film is released on the cut surface Can be suppressed or prevented. As a result, it is possible to suppress or prevent the reattachment (blocking) of the cut surfaces to each other, and to perform the pick-up described later more satisfactorily.

Further, in the case of expanding the dicing tape-integrated semiconductor backing film 1, the expanding can be performed using a conventionally known expanding device. The expanding device comprises a donut-shaped outer ring capable of pushing down the semiconductor backing film 1 with the dicing tape-integrated semiconductor backing layer via a dicing ring, a ring- And an inner ring for supporting the inner ring. By this expansion process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pick-up process to be described later.

[Pick-up process]

The semiconductor chip 5 is picked up as shown in Fig. 5 (c) to recover the semiconductor chip 5 adhered and fixed to the dicing tape-integrated semiconductor backing film 1, Is separated from the dicing tape 3 together with the semiconductor backing film 2. The pick-up method is not particularly limited, and various conventionally known methods can be employed. For example, the individual semiconductor chips 5 are caused to rise by the needles from the base 31 side of the dicing tape-integrated semiconductor backing film 1, and the rising semiconductor chips 5 are picked up by the pick- And the like. Further, the picked-up semiconductor chip 5 is protected by the semiconductor backing film 2 on the backside thereof.

[Flip chip connecting step]

The picked up semiconductor chip 5 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method) as shown in Fig. 5 (d). Specifically, the semiconductor chip 5 is bonded to the adherend 6 in such a manner that the circuit surface (also referred to as a surface, a circuit pattern forming surface, or an electrode forming surface) of the semiconductor chip 5 faces the adherend 6, In accordance with a conventional method. For example, the bumps 51 formed on the circuit surface side of the semiconductor chip 5 are brought into contact with the bonding conductive material (61: solder or the like) attached to the connection pads of the adherend 6, The electrical connection between the semiconductor chip 5 and the adherend 6 can be ensured and the semiconductor chip 5 can be fixed to the adherend 6 by flip chip bonding. At this time, voids are formed between the semiconductor chip 5 and the adherend 6, and the distance between the voids is generally about 30 μm to 300 μm. After the semiconductor chip 5 is flip-chip bonded (flip-chip bonded) to the adherend 6, the opposing faces and gaps between the semiconductor chip 5 and the adherend 6 are cleaned, and the sealing material Sealing resin or the like) is filled and sealed.

As the adherend 6, various substrates such as a lead frame and a circuit board (wiring circuit board, etc.) can be used. The material of such a substrate is not particularly limited, but a ceramic substrate or a plastic substrate can be used. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.

In the flip chip bonding process, the material of the bump or the conductive material is not particularly limited and, for example, a tin-lead metal material, a tin-silver metal material, a tin- (Alloys) such as a bismuth-based metal material, a gold-based metal material, and a copper-based metal material.

In the flip chip bonding step, the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 5 to the conductive material on the surface of the adherend 6. As the temperature for melting the conductive material, And is usually about 260 占 폚 (for example, 250 占 폚 to 300 占 폚). The dicing tape-integrated semiconductor backing film of the first invention of the present invention can be made to have heat resistance capable of enduring high temperature in the flip chip bonding step by forming a film for semiconductor backside with an epoxy resin or the like.

In this step, it is preferable to clean the opposing face (electrode forming face) or the gap between the semiconductor chip 5 and the adherend 6. The cleaning liquid used for the cleaning is not particularly limited, and examples thereof include organic cleaning liquids and aqueous cleaning liquids. The backing film of the semiconductor backing film for a semiconductor backplane integrated with a dicing tape of the first invention has a solvent resistance to a cleaning liquid and has substantially no solubility in these cleaning liquids. Therefore, as described above, various cleaning liquids can be used as the cleaning liquid, and the cleaning liquid can be cleaned by a conventional method without requiring a special cleaning liquid.

Next, a sealing process for sealing the gap between the flip-chip bonded semiconductor chip 5 and the adherend 6 is performed. The sealing process is performed using a sealing resin. Although the sealing conditions at this time are not particularly limited, thermal curing of the sealing resin is usually performed by heating at 175 DEG C for 60 seconds to 90 seconds, but the first invention is not limited to this, and for example, 165 C to 185 &lt; 0 &gt; C for several minutes. At this time, since the semiconductor backing film 2 contains 70% by weight or more of inorganic filler with respect to the whole semiconductor backing film 2, the tensile storage elastic modulus is relatively high. As a result, it is possible to effectively suppress or prevent the warping of the semiconductor chip, which may occur during thermal curing of the sealing resin. In addition, the semiconductor backing film 2 can be thermally cured completely or almost completely by the above process, and can be adhered to the back surface of the semiconductor chip with excellent adhesion. Since the semiconductor backing film 2 according to the first invention can be thermally cured together with the sealing material in the sealing step even in the uncured state, a process for thermally curing the semiconductor backing film 2 can be performed No new additions are required.

The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from a sealing material such as a known sealing resin. However, an insulating resin having elasticity is more preferable. As the sealing resin, for example, a resin composition containing an epoxy resin can be cited. Examples of the epoxy resin include the epoxy resins exemplified above. As the sealing resin of the resin composition containing the epoxy resin, a thermosetting resin (phenol resin or the like) other than the epoxy resin, a thermoplastic resin, or the like may be contained as the resin component in addition to the epoxy resin. The phenol resin can also be used as a curing agent for an epoxy resin. Examples of the phenol resin include the phenol resins exemplified above.

Since the semiconductor backing film is adhered to the back surface of the semiconductor chip in the semiconductor device (semiconductor device of the flip chip mounting) manufactured by using the dicing tape-integrated semiconductor backing film 1, the various marking is performed with excellent visibility can do. In particular, even if the marking method is a laser marking method, marking can be performed with a high contrast ratio, and various kinds of information (character information, graphic information, and the like) implemented by laser marking can be well recognized. When laser marking is performed, a known laser marking apparatus can be used. As the laser, various lasers such as a gas laser, a solid laser, and a liquid laser can be used. Specifically, a gas laser is not particularly limited and a known gas laser can be used, but a carbon dioxide gas laser (CO ₂ laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser, etc.) . The solid state laser is not particularly limited and a known solid state laser can be used, but a YAG laser (Nd: YAG laser, etc.) and a YVO ₄ laser are suitable.

The semiconductor device manufactured by using the dicing tape integral type semiconductor backing film or the semiconductor backing film of the first invention is a semiconductor device mounted by the flip chip mounting method and therefore is thinner than the semiconductor device mounted by the die bonding mounting method, , And a miniaturized shape. Therefore, it can be suitably used as various electronic devices and electronic parts or materials and members thereof. Specifically, the electronic device in which the semiconductor device of the flip-chip mounting according to the first invention is used includes so-called "mobile phone", "PHS", small computer (for example, "PDA" Digital camera (trademark) ", a so-called" digital video camera ", a so-called" digital video camera " A mobile electronic device such as a small television, a small game device, a small digital audio player, a so-called "electronic notebook", a so-called "electronic dictionary", a so- (Such as a so-called &quot; desktop computer &quot;, a thin television, a recording / reproducing electronic device (such as a hard disk drive) Coder, DVD player, etc.), a projector, a micromachine, etc.). Examples of the electronic parts or the materials and members of the electronic devices and electronic parts include a member of a so-called &quot; CPU &quot;, the absence of various storage devices (so-called &quot; memory &quot;, hard disk, etc.).

In the above-described embodiment, the case where the adhesive sheet of the first invention is a flip-chip type semiconductor backing film 2 has been described. However, the adhesive sheet of the first invention is not limited to this example. The adhesive sheet of the first invention of the present invention is not particularly limited as long as it can be formed on a dicing tape and used, for example, a die bond film or an underfill sheet.

In the case where the adhesive sheet of the first invention is a die-bonding film, the same composition as that of the flip chip type semiconductor backing film can be adopted after changing the composition or the content to the extent that the adhesive sheet functions as a die-bonding film. The semiconductor device manufacturing method is not limited to the flip chip bonding process except that a step of die-bonding a semiconductor element (for example, a semiconductor chip) to an adherend via a die bond film is performed, Is similar to that of the semiconductor device using the backing film (1). That is, a manufacturing method of a semiconductor device using a dicing tape-integrated die-bonding film includes a step of adhering a semiconductor wafer onto a die-bonding film in a dicing tape-integrated die-bonding film, a step of dicing the semiconductor wafer, A step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the die-bonding film, and a step of die-bonding the semiconductor element to the adherend via the die-bonding film.

In the case where the adhesive sheet of the first invention is an underfill sheet, the composition and content of the underfill sheet may be changed to such an extent that the adhesive sheet serves as an underfill sheet, and then the same configuration as that of the flip chip type semiconductor backside film can be adopted. As for the method of manufacturing the semiconductor device, in the mounting step, instead of adhering the semiconductor backing film 1 with the dicing tape-integrated semiconductor backing sheet 1 as the dicing tape-integrated adhesive sheet to the back surface of the semiconductor wafer, Except that the dicing tape-integrated underfill sheet as the adhesive sheet is adhered to the circuit face side of the semiconductor wafer, except for the use of the dicing tape-integrated semiconductor backside film (1). That is, a method of manufacturing a semiconductor device using a dicing tape-integrated underfill sheet includes the steps of: adhering a circuit surface side of a semiconductor wafer onto an underfill sheet in a dicing tape-integrated underfill sheet; A step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the underfill sheet, and a step of flip-chip bonding the semiconductor element to the adherend while interposing the underfill sheet therebetween.

<Second Invention>

Hereinafter, differences between the first and second embodiments of the present invention will be described. The dicing tape-integrated adhesive sheet according to the second aspect of the present invention can be configured in the same manner as the first aspect of the present invention, except for the aspects described in the second aspect of the present invention. Therefore, the description of the parts common to the first aspect of the present invention will be omitted.

(Dicing Tape-integrated Semiconductor Backside Film)

(Hereinafter also referred to as a second embodiment) of the semiconductor backing film with integral dicing tape according to the second present invention has the same constitution as the embodiment of the dicing tape-integrated semiconductor backing film according to the first present invention That is, the dicing tape-integrated semiconductor backside film 1 as shown in Fig. 1 can be mentioned. Since the layer structure of the semiconductor backing film 1 integrated with a dicing tape is described in the first aspect of the present invention, the description thereof is omitted here.

In the dicing tape-integrated semiconductor backside film 1 according to the second embodiment, the surface resistivity of the surface of at least one of the base material 31 and the pressure-sensitive adhesive layer 32 is 1.0 x 10 &lt; ¹¹ &gt; Preferably 1.0 x 10 ¹⁰ ? Or less, and more preferably 1.0 x 10 ⁹ ? Or less. In particular, in the case where an antistatic agent is contained in the base material 31, the surface resistivity on the surface of the base material 31, preferably from 1.0 × 10 and ¹¹ Ω or less, preferably 1.0 × 10 ¹⁰ than Ω or less, and more preferably 1.0 × 10 ⁹ Ω or less. Particularly, when the base material 31 has a multilayer structure and the antistatic agent is contained in the outermost layer of at least one of the base materials 31 of the multilayer structure, the surface of the outermost layer containing the antistatic agent The surface resistivity value is preferably 1.0 x 10 ¹¹ ? Or less, more preferably 1.0 x 10 ¹⁰ ? Or less, and still more preferably 1.0 x 10 ⁹ ? Or less.

When the antistatic agent is contained in the pressure-sensitive adhesive layer 32, the surface resistivity of the surface of the pressure-sensitive adhesive layer 32 is preferably 1.0 x 10 &lt; ¹¹ &gt; or less, more preferably 1.0 x 10 & 10 ¹⁰ Ω or less, and more preferably 1.0 × 10 ⁹ Ω or less.

When an antistatic agent is contained in both the base material 31 and the pressure-sensitive adhesive layer 32, the surface resistivity of the surface of the base material 31 is preferably 1.0 x 10 &lt; ¹¹ &gt; More preferably 1.0 × 10 ¹⁰ Ω or less, more preferably 1.0 × 10 ⁹ Ω or less and the surface resistivity value on the surface of the pressure-sensitive adhesive layer 32 is preferably 1.0 × 10 ¹¹ Ω or less , More preferably not more than 1.0 x 10 &lt; ¹⁰ &gt;, and even more preferably not more than 1.0 x 10 &lt; ⁹ &gt;

The surface resistivity value is preferably as small as possible, but may be, for example, 1.0 x 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, or 1.0 × 10 ⁷ Ω or more. Since the surface resistivity is 1.0 x 10 &lt; ¹¹ &gt; or less, it is difficult to charge. Therefore, the antistatic effect can be further exerted. In the present invention, the surface resistivity value of the surface of at least one of the substrate and the pressure-sensitive adhesive layer refers to a value of surface resistivity of the substrate, that is, the surface of the substrate on the side of the pressure-sensitive adhesive layer, And the surface resistivity of the pressure-sensitive adhesive layer on at least one surface of the surface opposite to the substrate. The surface resistivity value refers to a value measured by the method described in Examples.

The peeling test of the pressure-sensitive adhesive layer 32 and the adhesive sheet 2 in the peeling test at the peeling speed of 10 m / min and the peeling angle of 150 占 폚 in the dicing tape integrated type semiconductor backing film 1 according to the second embodiment The peeling force is preferably 0.02 to 0.5 N / 20 mm, more preferably 0.02 to 0.3 N / 20 mm, and still more preferably 0.02 to 0.2 N / 20 mm. When the peeling force is 0.02 N / 20 mm or more, the semiconductor wafer can be fixed at the time of dicing. When the peeling force is 0.5 N / 20 mm or less, the semiconductor element to which the adhesive sheet 2 is attached can easily be peeled from the pressure-sensitive adhesive layer 32 at the time of picking up.

In the dicing tape-integrated semiconductor backside film 1 according to the second embodiment, the peeling strength of the adhesive layer 32 and the adhesive sheet 2 when peeling off the pressure-sensitive adhesive layer 32 and the adhesive sheet 2 according to the conditions of the peeling test The absolute value is preferably not more than 0.5 kV (-0.5 kV to +0.5 kV), more preferably not more than 0.3 kV (-0.3 kV to +0.3 kV), more preferably not more than 0.2 kV + 0.2 kV). The antistatic effect can be further exerted when the absolute value of the peeling electrification voltage when the pressure-sensitive adhesive layer (32) and the adhesive sheet (2) are peeled off according to the conditions of the peeling test is 0.5 kV or less. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

<Third Invention>

Hereinafter, different aspects of the third embodiment of the present invention from the first embodiment will be described. The dicing tape-integrated adhesive sheet according to the third aspect of the present invention can be configured in the same manner as in the first aspect of the present invention, except as described in the third aspect of the present invention. Therefore, the description of the parts common to the first aspect of the present invention will be omitted.

(Dicing Tape-integrated Semiconductor Backside Film)

(Hereinafter also referred to as a third embodiment) of the semiconductor backing film with integral dicing tape according to the third present invention has the same constitution as the embodiment of the dicing tape-integrated semiconductor backing film according to the first present invention That is, the dicing tape-integrated semiconductor backside film 1 as shown in Fig. 1 can be mentioned. Since the layer structure of the semiconductor backing film 1 integrated with a dicing tape is described in the first aspect of the present invention, the description thereof is omitted here.

In the dicing tape-integrated semiconductor backside film 1 according to the third embodiment, at least one of the base material 31 and the pressure-sensitive adhesive layer 32 contains a polymer-type antistatic agent. Since the dicing tape integral type semiconductor backing film 1 contains a polymeric antistatic agent in at least one of the base material 31 and the pressure-sensitive adhesive layer 32, it is difficult to charge the film. Therefore, the antistatic effect can be exhibited. Further, since a high molecular weight antistatic agent is used as an antistatic agent, it is difficult to bleed from the base material 31 and the pressure-sensitive adhesive layer 32. As a result, deterioration of the antistatic function due to aging can be suppressed. Particularly, if the base material 31 contains a polymeric antistatic agent, peeling electrification between the base material 31 and the adsorption band can be suppressed when the dicing tape 3 is removed from the adsorption side . In particular, if the base material 31 has a multilayer structure and the polymeric antistatic agent is contained in the outermost layer of the base material 31 of the multilayer structure on the side of the pressure-sensitive adhesive layer 32, the base material 31 and the pressure- Can be suppressed. If the polymeric antistatic agent is contained in the outermost layer of the base material 31 of the multi-layer structure opposite to the pressure-sensitive adhesive layer 32, the peeling electrification between the base material 31 and the adsorber can be more effectively suppressed.

The semiconductor backing film 2 may also contain a polymeric antistatic agent. If the semiconductor backing film 2 contains a polymeric antistatic agent, it has an antistatic effect even after being peeled off from the dicing tape 3. As a result, even after peeling from the dicing tape 3, breakage of the semiconductor element by charging can be suppressed. Particularly, if the semiconductor backing film 2 has a multilayer structure and the polymeric antistatic agent is contained in the outermost layer on the side of the dicing tape 3 in the semiconductor backing film 2 having a multilayer structure, Peeling electrification when the layer 32 and the semiconductor backside film 2 are peeled off can be more effectively suppressed. The polymer type antistatic agent is as described in the first aspect of the present invention.

In the dicing tape-integrated semiconductor backside film 1 according to the third embodiment, the surface resistivity value of at least one of the base material 31 and the pressure-sensitive adhesive layer 32 is preferably 1.0 x 10 &lt; ¹¹ Ω or less, more preferably 1.0 × 10 ¹⁰ Ω or less, and still more preferably 1.0 × 10 ⁹ Ω or less.

Particularly, when a polymeric antistatic agent is contained in the base material 31, the surface resistivity of the surface of the base material 31 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably 1.0 × 10 ¹¹ Ω or less, 10 ¹⁰ Ω or less, and more preferably 1.0 × 10 ⁹ Ω or less. Particularly, when the base material 31 has a multilayer structure and the polymeric antistatic agent is contained in at least one outermost layer of the base material 31 of the multilayer structure, the outermost layer containing the polymeric antistatic agent The surface resistivity on the surface is preferably 1.0 x 10 ¹¹ ? Or less, more preferably 1.0 x 10 ¹⁰ ? Or less, and still more preferably 1.0 x 10 ⁹ ? Or less.

When the pressure sensitive adhesive layer 32 contains a polymeric antistatic agent, the surface resistivity of the surface of the pressure sensitive adhesive layer 32 is preferably 1.0 × 10 ¹¹ Ω or less, more preferably, is less than 1.0 × ¹⁰ 10 Ω, more preferably from 1.0 × 10 ⁹ Ω or less.

When the polymeric antistatic agent is contained in both the base material 31 and the pressure-sensitive adhesive layer 32, the surface resistivity of the surface of the base material 31 is preferably 1.0 x 10 &lt; ¹¹ &gt; More preferably 1.0 x 10 ¹⁰ ? Or less, more preferably 1.0 x 10 ⁹ ? Or less, and the surface resistivity of the surface of the pressure-sensitive adhesive layer 32 is preferably 1.0 x 10 ¹¹ ? or less, and more preferably not more than 1.0 × ¹⁰ 10 Ω, more preferably from 1.0 × 10 ⁹ Ω or less.

The surface resistivity value is preferably as small as possible, but may be, for example, 1.0 x 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, or 1.0 × 10 ⁷ Ω or more. If the surface resistivity is 1.0 x 10 &lt; ¹¹ &gt; or less, it is difficult to charge. Therefore, the antistatic effect can be further exerted. In the third aspect of the present invention, the surface resistivity value of at least one surface of the substrate and the pressure-sensitive adhesive layer may be a surface resistivity side surface of the substrate, a surface opposite to the pressure-sensitive adhesive layer of the substrate, Of the surface of the pressure-sensitive adhesive layer and the surface of the pressure-sensitive adhesive layer opposite to the substrate. The surface resistivity value refers to a value measured by the method described in Examples.

The peeling test of the pressure-sensitive adhesive layer 32 and the adhesive sheet 2 in the peeling test at the peeling speed of 10 m / min and the peeling angle of 150 占 폚 in the dicing tape-integrated semiconductor backside film 1 according to the third embodiment The peel force is preferably 0.02 to 0.5 N / 20 mm, more preferably 0.02 to 0.3 N / 20 mm, and still more preferably 0.02 to 0.2 N / 20 mm. When the peeling force is 0.02 N / 20 mm or more, the semiconductor wafer can be fixed at the time of dicing. When the peeling force is 0.5 N / 20 mm or less, the semiconductor element to which the adhesive sheet 2 is attached easily can be peeled from the pressure-sensitive adhesive layer 32 at the time of picking up.

In the dicing tape-integrated semiconductor backside film (1) according to the third embodiment, the peeling electrification voltage at the time of peeling the pressure-sensitive adhesive layer (32) and the adhesive sheet (2) The absolute value is preferably not more than 0.5 kV (-0.5 kV to +0.5 kV), more preferably not more than 0.3 kV (-0.3 kV to +0.3 kV), more preferably not more than 0.2 kV + 0.2 kV). The antistatic effect can be further exerted when the absolute value of the peeling electrification voltage when the pressure-sensitive adhesive layer (32) and the adhesive sheet (2) are peeled off according to the conditions of the peeling test is 0.5 kV or less. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

<Fourth Invention>

Hereinafter, different aspects of the fourth embodiment of the present invention from the first embodiment will be described. The dicing tape-integrated adhesive sheet of the fourth aspect of the present invention can be configured in the same manner as in the first aspect of the present invention, except for the aspects described in the fourth aspect of the present invention. Therefore, the description of the parts common to the first aspect of the present invention will be omitted.

(Dicing Tape-integrated Semiconductor Backside Film)

(Hereinafter also referred to as a fourth embodiment) of the semiconductor backing film with integral dicing tape according to the fourth invention is similar to the embodiment of the dicing tape-integrated semiconductor backing film according to the first present invention That is, the dicing tape-integrated semiconductor backside film 1 as shown in Fig. 1 can be mentioned. Since the layer structure of the semiconductor backing film 1 integrated with a dicing tape is described in the first aspect of the present invention, the description thereof is omitted here.

The semiconductor backside film 2 according to the fourth embodiment has a surface resistivity of 1.0 x 10 &lt; ¹¹ &gt; or less, preferably 1.0 x ¹⁰ &lt; ¹⁰ &gt; Is 1.0 x 10 &lt; ⁹ &gt; or less. When the semiconductor backing film 2 has a multilayer structure and the antistatic agent is contained in either outermost layer, the surface resistivity of the surface of the outermost layer containing the antistatic agent is preferably Is not more than 1.0 x 10 ¹¹ ?, More preferably not more than 1.0 x 10 ¹⁰ ?, And still more preferably not more than 1.0 x 10 ⁹ ?. The surface resistivity value is preferably as small as possible, but may be, for example, 1.0 x 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, or 1.0 × 10 ⁷ Ω or more. Since the surface resistivity is 1.0 x 10 &lt; ¹¹ &gt; or less, it is difficult to charge. Therefore, the antistatic effect can be further exerted. The surface resistivity value refers to a value measured by the method described in Examples.

The pressure-sensitive adhesive layer 32 and the adhesive sheet 2 in the peeling test at the peeling speed of 10 m / min and the peeling angle of 150 deg. In the semiconductor backing film 1 with a dicing tape integral type semiconductor according to the fourth embodiment The peel force is preferably 0.02 to 0.5 N / 20 mm, more preferably 0.02 to 0.3 N / 20 mm, and still more preferably 0.02 to 0.2 N / 20 mm. When the peeling force is 0.02 N / 20 mm or more, the semiconductor wafer can be fixed at the time of dicing. When the peeling force is 0.5 N / 20 mm or less, the semiconductor element to which the adhesive sheet 2 is attached easily can be peeled from the pressure-sensitive adhesive layer 32 at the time of picking up.

In the dicing tape-integrated semiconductor backside film 1 according to the fourth embodiment, the peeling electrification voltage (the peeling electrification voltage) when the pressure-sensitive adhesive layer 32 and the adhesive sheet 2 are peeled off according to the conditions of the peeling test The absolute value is preferably not more than 0.5 kV (-0.5 kV to +0.5 kV), more preferably not more than 0.3 kV (-0.3 kV to +0.3 kV), more preferably not more than 0.2 kV + 0.2 kV). The antistatic effect can be further exerted when the absolute value of the peeling electrification voltage when the pressure-sensitive adhesive layer (32) and the adhesive sheet (2) are peeled off according to the conditions of the peeling test is 0.5 kV or less. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

In the case where the semiconductor backing film 2 according to the fourth embodiment is not laminated on the dicing tape 3, the semiconductor backing film 2 is formed by using a single separator having a release layer on both surfaces thereof, Or may be protected by a separator having a release layer on at least one side thereof.

The semiconductor backing film 2 according to the fourth embodiment is adhered to the dicing tape so that the flip chip mounting semiconductor device (the semiconductor chip, etc.) is bonded to the dicing tape in the same manner as the dicing tape- For example, a semiconductor device of a state or shape fixed to an adherend of a semiconductor device (e.g., a semiconductor device) by a flip chip bonding method.

Further, in the case of manufacturing a semiconductor device by using a flip-chip type semiconductor backing film (for example, the semiconductor backing film 2), it is preferable to use a dicing tape- A semiconductor device can be manufactured by a method according to a manufacturing method. According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: preparing a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate; bonding the adhesive sheet to the pressure- A method for manufacturing a semiconductor device, comprising the steps of: obtaining a sheet; adhering a semiconductor wafer onto an adhesive sheet in the dicing tape-integrated adhesive sheet; dicing the semiconductor wafer to form a semiconductor element; And a step of picking up the pressure-sensitive adhesive layer of the dicing tape together.

In particular, in the case where the adhesive sheet of the fourth aspect of the present invention is a film for backside of semiconductor, the manufacturing method of the semiconductor device includes a step of preparing a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate, A step of adhering a back surface of a semiconductor wafer on the dicing tape-integrated semiconductor backing film, a step of dicing the semiconductor wafer, and a step of dicing the semiconductor wafer A step of picking up a semiconductor element obtained by dicing; and a step of flip-chip bonding the semiconductor element on an adherend.

<Fifth invention>

Hereinafter, different aspects of the fifth embodiment of the present invention from the first embodiment will be described. The dicing tape-integrated adhesive sheet of the fifth aspect of the present invention can be configured in the same manner as in the first aspect of the present invention, except for the description of the fifth aspect of the present invention. Therefore, the description of the parts common to the first aspect of the present invention will be omitted.

(Dicing Tape-integrated Semiconductor Backside Film)

(Hereinafter also referred to as a fifth embodiment) of the semiconductor backing film with integral dicing tape according to the fifth invention is the same as the embodiment of the dicing tape-integrated semiconductor backing film according to the first present invention That is, the dicing tape-integrated semiconductor backside film 1 as shown in Fig. 1 can be mentioned. Since the layer structure of the semiconductor backing film 1 integrated with a dicing tape is described in the first aspect of the present invention, the description thereof is omitted here.

The semiconductor backing film 2 according to the fifth embodiment contains a polymer-type antistatic agent. Since the polymer backing film 2 contains the polymer type antistatic agent, it is difficult to make a charge. In addition, since a polymeric antistatic agent is used as an antistatic agent, it is difficult to bleed from the semiconductor backing film 2. As a result, deterioration of the antistatic function due to aging can be suppressed. Further, since the semiconductor backing film 2 contains the high molecular weight antistatic agent, it has an antistatic effect even after being peeled from the dicing tape when used as a dicing tape-integrated adhesive sheet adhered to the dicing tape. As a result, even after peeling from the dicing tape, breakage of the semiconductor element by charging can be suppressed. Particularly, if the semiconductor backing film 2 has a multilayer structure and the polymeric antistatic agent is contained in the outermost layer on the side of the dicing tape 3 in the semiconductor backing film 2 having a multilayer structure, Peeling electrification when the layer 32 and the semiconductor backside film 2 are peeled off can be more effectively suppressed.

The dicing tape-integrated semiconductor backside film (1) may contain a polymeric antistatic agent in at least one of the substrate (31) and the pressure sensitive adhesive layer (32). If the polymeric antistatic agent is contained in at least one of the base material 31 and the pressure-sensitive adhesive layer 32, it is more difficult to charge. Therefore, the antistatic effect can be further exerted. Further, since a high molecular weight antistatic agent is used as an antistatic agent, it is difficult to bleed from the base material 31 and the pressure-sensitive adhesive layer 32. As a result, deterioration of the antistatic function due to aging can be suppressed. Particularly, if the base material 31 contains a polymeric antistatic agent, peeling electrification between the base material 31 and the adsorption band can be suppressed when the dicing tape 3 is removed from the adsorption side . In particular, if the base material 31 has a multilayer structure and the polymeric antistatic agent is contained in the outermost layer of the base material 31 of the multilayer structure on the side of the pressure-sensitive adhesive layer 32, the base material 31 and the pressure- Can be suppressed. If the polymeric antistatic agent is contained in the outermost layer of the base material 31 of the multi-layer structure opposite to the pressure-sensitive adhesive layer 32, the peeling electrification between the base material 31 and the adsorber can be more effectively suppressed. The polymer type antistatic agent is as described in the first aspect of the present invention.

The semiconductor backside film 2 according to the fifth embodiment has a surface resistivity value of preferably 1.0 x 10 &lt; ¹¹ &gt; or less, more preferably 1.0 x ¹⁰ &lt; ¹⁰ &gt; , More preferably not more than 1.0 x 10 &lt; ⁹ &gt; When the semiconductor backing film 2 has a multilayer structure and a polymeric antistatic agent is contained in either one of the outermost layers, the surface resistivity of the surface of the outermost layer containing the polymeric antistatic agent Is preferably not more than 1 × 10 ¹¹ Ω, more preferably not more than 1.0 × 10 ¹⁰ Ω, and further preferably not more than 1.0 × 10 ⁹ Ω. The smaller the value of the surface resistivity is, the more preferable it is, for example, 1.0 x 10 ⁵ Ω or more, 1.0 × 10 ⁶ Ω or more, and 1.0 × 10 ⁷ Ω or more. If the surface resistivity is 1.0 x 10 &lt; ¹¹ &gt; or less, it is difficult to charge. Therefore, the antistatic effect can be further exerted. The surface resistivity value refers to a value measured by the method described in Examples.

In the peeling test at the peeling speed of 10 m / min and the peeling angle of 150 deg. In the dicing tape integrated type semiconductor backing film 1 according to the fifth embodiment, the peeling strength of the adhesive layer 32 and the adhesive sheet 2 The peel force is preferably 0.02 to 0.5 N / 20 mm, more preferably 0.02 to 0.3 N / 20 mm, and still more preferably 0.02 to 0.2 N / 20 mm. When the peeling force is 0.02 N / 20 mm or more, the semiconductor wafer can be fixed at the time of dicing. When the peeling force is 0.5 N / 20 mm or less, the semiconductor element to which the adhesive sheet 2 is attached easily can be peeled from the pressure-sensitive adhesive layer 32 at the time of picking up.

In the dicing tape-integrated semiconductor backside film (1) according to the fifth embodiment, the peeling electrification voltage at the time of peeling the pressure-sensitive adhesive layer (32) and the adhesive sheet (2) The absolute value is preferably not more than 0.5 kV (-0.5 kV to +0.5 kV), more preferably not more than 0.3 kV (-0.3 kV to +0.3 kV), more preferably not more than 0.2 kV + 0.2 kV). The antistatic effect can be further exerted when the absolute value of the peeling electrification voltage when the pressure-sensitive adhesive layer (32) and the adhesive sheet (2) are peeled off according to the conditions of the peeling test is 0.5 kV or less. As a result, it is possible to prevent the semiconductor element from being broken by the peeling electrification at the time of pick-up, and to improve the reliability as a device.

In the case where the semiconductor backing film 2 according to the fifth embodiment is not laminated on the dicing tape 3, the semiconductor backing film 2 is formed by using a single separator having a release layer on both surfaces thereof, Or may be protected by a separator having a release layer on at least one side thereof.

Further, the semiconductor backing film 2 according to the fifth embodiment is adhered to the dicing tape so that the flip chip mounting semiconductor device (the semiconductor chip, etc.) can be bonded to the dicing tape in the same manner as the dicing tape- For example, a semiconductor device of a state or shape fixed to an adherend of a semiconductor device (e.g., a semiconductor device) by a flip chip bonding method.

Further, in the case of manufacturing a semiconductor device by using a flip-chip type semiconductor backing film (for example, the semiconductor backing film 2), it is preferable to use a dicing tape- A semiconductor device can be manufactured by a method according to a manufacturing method. That is, a manufacturing method of a semiconductor device according to a fifth aspect of the present invention includes the steps of preparing a dicing tape in which a pressure-sensitive adhesive layer is laminated on a substrate, and attaching the adhesive sheet on the pressure-sensitive adhesive layer of the dicing tape, A method for manufacturing a semiconductor device, comprising the steps of: obtaining a sheet; adhering a semiconductor wafer onto an adhesive sheet in the dicing tape-integrated adhesive sheet; dicing the semiconductor wafer to form a semiconductor element; And a step of picking up the pressure-sensitive adhesive layer of the dicing tape together.

In particular, when the adhesive sheet of the fifth aspect of the present invention is a film for backside of semiconductor, the manufacturing method of the semiconductor device includes a step of preparing a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate, A step of adhering a back surface of a semiconductor wafer on the dicing tape-integrated semiconductor backing film, a step of dicing the semiconductor wafer, and a step of dicing the semiconductor wafer A step of picking up a semiconductor element obtained by dicing; and a step of flip-chip bonding the semiconductor element on an adherend.

[Example]

Hereinafter, a preferred embodiment of the present invention will be described in detail by way of example. However, the materials and blending amounts described in this embodiment are not intended to limit the scope of the present invention only so far as they are not particularly limited. In addition, "part" means weight part.

Examples 1 to 23 correspond to the first invention.

Examples 1 to 5 and Examples 13 to 17 correspond to the second invention and the third invention.

Examples 6 to 7 and Examples 18 to 20 correspond to the fourth and fifth inventions.

(Example 1)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. (Laminated substrate A) (laminated substrate A) in which an outermost layer (thickness: 20 占 퐉, polyolefin-based material), an intermediate layer (thickness: 40 占 퐉, polyolefin- In some cases). In the outermost layer, 30% by weight of the antireflective agent, product name: Perestat (manufactured by Sanyo Chemical Industries, Ltd.), was contained in the resin component of the outermost layer. In the present embodiment, the innermost layer refers to a layer on which the pressure-sensitive adhesive layer is formed, and the outermost layer refers to a layer on the side opposite to the side on which the pressure-sensitive adhesive layer is formed.

Next, 88.8 parts of 2-ethylhexyl acrylate (hereinafter referred to as &quot; 2EHA &quot;), 2-hydroxyethyl acrylate (hereinafter referred to as &quot; HEA ), 0.2 parts of benzoyl peroxide and 65 parts of toluene, and polymerization was carried out at 61 ° C for 6 hours in a nitrogen stream to obtain an acrylic polymer A having a weight average molecular weight of 850,000. The molar ratio of 2EHA to HEA was 100mol to 20mol.

12 parts of 2-methacryloyloxyethyl isocyanate (hereinafter referred to as &quot; MOI &quot;) (80 mol% with respect to HEA) was added to the acrylic polymer A, and the addition reaction was carried out at 50 DEG C for 48 hours in an air stream , Thereby obtaining an acrylic polymer A '.

Next, 8 parts of a polyisocyanate compound (Coronate L, trade name, manufactured by Nippon Polyurethane Industry Co., Ltd.) and 8 parts of a photopolymerization initiator (trade name: Irgacure 651, manufactured by Chiba Specialty Chemical Co., Ltd.) were added to 100 parts of the acrylic polymer A ' Was added to prepare a pressure sensitive adhesive solution (sometimes referred to as &quot; pressure sensitive adhesive solution A &quot;).

The pressure-sensitive adhesive solution A prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate A and stored at 50 캜 for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated substrate A using only an ultraviolet irradiator (manufactured by Nitto Seiki Co., Ltd. (product name: UM-810)) only in a region where the semiconductor wafer was mounted, Dicing tape A &quot; in some cases).

&Lt; Preparation of adhesive sheet >

(Trade name: &quot; Epikote 1004 &quot; JER Co., Ltd.) was added to 100 parts of an acrylic ester polymer (trade name: &quot; PARACLON W-197CM &quot;, trade name, manufactured by Negami Chemical Industry Co., Ltd.) having ethyl acrylate- 113 parts, phenol resin (trade name: Mirex XLC-4L manufactured by Mitsui Chemicals, Inc.): 121 parts, spherical silica (trade name: SO-25R manufactured by Admatechs Co., Ltd.): 246 parts, 5 parts of Dye 1 (trade name "OIL GREEN 502" manufactured by Orient Kagaku Kogyo Co., Ltd.) and 5 parts of Dye 2 (trade name "OIL BLACK BS" manufactured by Orient Kagaku Kogyo Co., Ltd.) were dissolved in methyl ethyl ketone, To thereby prepare an adhesive composition solution A having a solid content concentration of 23.6% by weight.

The adhesive composition solution A was coated on a mold releasing film comprising a polyethylene terephthalate film having a thickness of 50 占 퐉 and subjected to a silicon release treatment as a peeling roller (separator), followed by drying at 130 占 폚 for 2 minutes to obtain a thickness ) 20 mu m thick.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded to the pressure-sensitive adhesive layer of the dicing tape A using a hand roller to prepare a dicing tape-integrated adhesive sheet A.

(Example 2)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. ("Laminated substrate B") in which an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, based on polyolefin) and an innermost layer ) Was produced. In the outermost layer, 25% by weight of the antistatic agent, product name: Perestat (manufactured by Sanyo Chemical Industries, Ltd.), was contained in the resin component of the outermost layer.

As the pressure sensitive adhesive solution, the pressure sensitive adhesive solution A was used.

The pressure-sensitive adhesive solution A prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer side was bonded to the innermost layer side of the laminated base material B and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated substrate B using only an ultraviolet ray irradiating device (manufactured by Nitto Seiki Co., Ltd. (product name: UM-810)) only in a region where the semiconductor wafer was mounted, Dicing tape B &quot; in some cases).

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded to the pressure-sensitive adhesive layer of the dicing tape B using a hand roller to prepare an adhesive sheet B with a dicing tape.

(Example 3)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. (Laminated base material C) having an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, based on polyolefin) and an innermost layer In some cases). In the outermost layer, 20% by weight of the antireflective agent, product name: Perestat (manufactured by Sanyo Chemical Industries, Ltd.) was added to the resin component of the outermost layer.

As the pressure sensitive adhesive solution, the pressure sensitive adhesive solution A was used.

The pressure-sensitive adhesive solution A prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate C and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the laminated base material C side only by using an ultraviolet ray irradiation apparatus (manufactured by Nitto Seiki Co., Ltd. (product name: UM-810) Dicing tape C &quot; in some cases).

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded to the pressure-sensitive adhesive layer of the dicing tape C using a hand roller to prepare a dicing tape-integrated adhesive sheet C.

(Example 4)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. (Laminated substrate D) having an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, polyolefin based material) In some cases).

Next, a solution D for forming an antistatic agent layer was coated on the outermost layer, and then dried by heating at 60 DEG C for 1 minute to form an antistatic agent layer having a thickness of about 100 nm. The solution D for forming the antistatic agent layer was prepared by dispersing the solution in a methyl ethyl ketone (MEK) solvent at a concentration of 1%, using an antistatic agent, product name: SEPLE JA (compound name: polythiophene).

Then, the pressure-sensitive adhesive solution A was used as the pressure-sensitive adhesive solution.

The pressure-sensitive adhesive solution A prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate D and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated substrate D using only an ultraviolet ray irradiator (manufactured by Nitto Seiki Co., Ltd. (product name: UM-810)) only in a region where the semiconductor wafer was mounted, Dicing tape D &quot; in some cases). In this dicing tape D, an antistatic agent layer is formed on the outermost layer of the substrate.

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded onto the adhesive layer of the dicing tape D using a hand roller to prepare an adhesive sheet D with a dicing tape.

(Example 5)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. ("Laminated base E") having an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, based on polyolefin) and an innermost layer In some cases).

Next, a solution E for forming an antistatic agent layer was coated on the outermost layer, and then heated and dried at 60 占 폚 for 1 minute to form an antistatic agent layer having a thickness of about 50 nm. Antistatic agent layer-forming solution E was prepared by dispersing the solution in a MEK solvent at a concentration of 1% using an antistatic agent, trade name: SEPLEX (compound name: polythiophene).

Then, the pressure-sensitive adhesive solution A was used as the pressure-sensitive adhesive solution.

The pressure-sensitive adhesive solution A prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate E and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated substrate E using an ultraviolet irradiator (manufactured by Nitto Seiki Co., Ltd. (product name, UM-810)) only in a region where the semiconductor wafer was mounted, Dicing tape E &quot; in some cases). In this dicing tape E, an antistatic agent layer is formed on the outermost layer of the substrate.

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded to the pressure-sensitive adhesive layer of the dicing tape E using a hand roller to prepare an adhesive sheet E with a dicing tape.

(Example 6)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. (A laminated substrate F) having an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, polyolefin based material) In some cases).

Then, the pressure-sensitive adhesive solution A was used as the pressure-sensitive adhesive solution.

The pressure-sensitive adhesive solution A prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate F and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated substrate F by using an ultraviolet ray irradiator (manufactured by Nitto Seiki Co., Ltd. (product name, UM-810)) only in a region where the semiconductor wafer was mounted, Dicing tape F "in some cases).

&Lt; Preparation of adhesive sheet >

Epoxote 1004 "JER (trade name:" Epikote 1004 ") was added to 100 parts of an acrylic ester polymer (trade name:" Paracron W-197CM "manufactured by Negami Chemical Industry Co., Ltd.) ) 113 parts, phenol resin (trade name: Mirex XLC-4L, manufactured by Mitsui Chemicals, Inc.): 121 parts, spherical silica (trade name: SO-25R manufactured by Admatex Co., Ltd.): 246 parts , 5 parts of Dye 1 (trade name "OIL GREEN 502" manufactured by Orient Kagaku Kogyo K.K.), 5 parts of Dye 2 (trade name "OIL BLACK BS" manufactured by Orient Kagaku Kogyo Co., Ltd.) Perestat (manufactured by Sanyo Chemical Industries, Ltd.) was dissolved in methyl ethyl ketone in an amount of 30% by weight based on the entire resin component to prepare an adhesive composition solution F having a solid content concentration of 23.6% by weight (excluding an antistatic agent).

The adhesive composition solution F was applied onto a releasable film including a polyethylene terephthalate film having a thickness of 50 占 퐉 which was subjected to a silicon release treatment as a release liner (separator), followed by drying at 130 占 폚 for 2 minutes, (Manufactured by Sanyo Chemical Industries, Ltd.) as an antistatic agent, and 30% by weight of the antistatic agent per 100 parts by weight of the resin component.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet F was bonded to the pressure-sensitive adhesive layer of the dicing tape F using a hand roller to prepare an adhesive sheet F with a dicing tape.

(Example 7)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. (Laminated substrate G) having an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, polyolefin based material) In some cases).

Then, the pressure-sensitive adhesive solution A was used as the pressure-sensitive adhesive solution.

The pressure-sensitive adhesive solution A prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate G and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated base material G only by using an ultraviolet ray irradiation apparatus (manufactured by Nitto Seiki Co., Ltd. (product name, UM-810) Dicing tape G "in some cases).

&Lt; Preparation of adhesive sheet >

Epoxote 1004 "JER (trade name:" Epikote 1004 ") was added to 100 parts of an acrylic ester polymer (trade name:" Paracron W-197CM "manufactured by Negami Chemical Industry Co., Ltd.) ) 113 parts, phenol resin (trade name: Mirex XLC-4L, manufactured by Mitsui Chemicals, Inc.): 121 parts, spherical silica (trade name: SO-25R manufactured by Admatex Co., Ltd.): 246 parts , 5 parts of Dye 1 (trade name "OIL GREEN 502" manufactured by Orient Kagaku Kogyo K.K.), 5 parts of Dye 2 (trade name "OIL BLACK BS" manufactured by Orient Kagaku Kogyo Co., Ltd.) Perestat (manufactured by Sanyo Chemical Industries, Ltd.) was dissolved in methyl ethyl ketone in an amount of 25% by weight based on the total amount of the resin component to prepare an adhesive composition solution G having a solid content concentration of 23.6% by weight (excluding an antistatic agent).

The adhesive composition solution G was applied onto a mold releasing film comprising a polyethylene terephthalate film having a thickness of 50 占 퐉 and subjected to a silicon release treatment as a release liner (separator), followed by drying at 130 占 폚 for 2 minutes, (Manufactured by Sanyo Chemical Industries, Ltd.) as an antistatic agent was contained in an amount of 25% by weight based on the total amount of the resin component.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet G was bonded onto the pressure sensitive adhesive layer of the dicing tape G using a hand roller to prepare an adhesive sheet G with a dicing tape.

(Example 8)

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet F prepared in Example 6 was bonded to the pressure-sensitive adhesive layer of the dicing tape A produced in Example 1 using a hand roller to prepare an adhesive sheet H with a dicing tape.

(Example 9)

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet G produced in Example 7 was bonded to the pressure-sensitive adhesive layer of the dicing tape B produced in Example 2 using a hand roller to prepare an adhesive sheet I with a dicing tape.

(Example 10)

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet F prepared in Example 6 was bonded to the pressure-sensitive adhesive layer of the dicing tape D produced in Example 4 using a hand roller to prepare an adhesive sheet J with a dicing tape.

(Example 11)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. (Laminated base material K) having an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, based on polyolefin) and an innermost layer In some cases).

Next, the pressure-sensitive adhesive solution K was adjusted in the same manner as in the above-mentioned pressure-sensitive adhesive solution A, except that 30% by weight of the antistatic agent, product name: Perestat (manufactured by Sanyo Chemical Industries, Ltd.)

The pressure-sensitive adhesive solution K prepared above was coated on the silicone-treated surface of the PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate K and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated base material K using an ultraviolet ray irradiation apparatus (manufactured by Nitto Seiki Co., Ltd. (product name, UM-810)) only in a region where the semiconductor wafer was mounted, Dicing tape K &quot; in some cases).

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded onto the adhesive layer of the dicing tape K using a hand roller to prepare an adhesive sheet K with a dicing tape.

(Example 12)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. ("Laminated substrate L") in which an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, based on polyolefin) and an innermost layer In some cases).

Next, the pressure-sensitive adhesive solution L was adjusted in the same manner as in the above-mentioned pressure-sensitive adhesive solution A, except that 25% by weight of the antistatic agent, product name: Perestat (manufactured by Sanyo Chemical Industries, Ltd.)

The pressure-sensitive adhesive solution L prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate L and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated substrate L using an ultraviolet ray irradiator (manufactured by Nitto Seiki Co., Ltd. (trade name, UM-810)) only in a region where the semiconductor wafer was mounted, Quot; dicing tape L &quot;).

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded to the pressure-sensitive adhesive layer of the dicing tape L using a hand roller to prepare a dicing tape-integrated adhesive sheet L.

(Example 13)

A dicing tape-integrated adhesive sheet according to Example 13 was produced in the same manner as in Example 1 except that the amount of the antistatic agent contained in the outermost layer of the substrate was changed to 5 wt% Respectively. This was referred to as a dicing tape-integrated adhesive sheet M.

(Example 14)

A dicing tape-integrated adhesive sheet according to Example 14 was produced in the same manner as in Example 1 except that the amount of the antistatic agent contained in the outermost layer of the substrate was changed to 10% Respectively. This was referred to as dicing tape integral type adhesive sheet N.

(Example 15)

A dicing tape-integrated adhesive sheet according to Example 15 was produced in the same manner as in Example 1 except that the amount of the antistatic agent contained in the outermost layer of the substrate was changed to 50 wt% Respectively. This was referred to as a dicing tape-integrated adhesive sheet O.

(Example 16)

A dicing tape-integrated adhesive sheet according to Example 16 was produced in the same manner as in Example 4 except that the antistatic agent layer was formed to have a thickness of about 20 nm. This was referred to as a dicing tape-integrated adhesive sheet P.

(Example 17)

A dicing tape-integrated adhesive sheet according to Example 17 was produced in the same manner as in Example 4 except that the antistatic agent layer was formed to have a thickness of about 150 nm. This was referred to as a dicing tape integral type adhesive sheet Q.

(Example 18)

A dicing tape-integrated adhesive sheet according to Example 18 was produced in the same manner as in Example 6 except that the amount of the antistatic agent contained in the adhesive sheet was 5 wt% with respect to the total resin component of the adhesive sheet. This was referred to as a dicing tape-integrated adhesive sheet R.

(Example 19)

A dicing tape-integrated adhesive sheet according to Example 19 was produced in the same manner as in Example 6 except that the amount of the antistatic agent contained in the adhesive sheet was 10% by weight based on the total resin component of the adhesive sheet. This was referred to as a dicing tape-integrated adhesive sheet S.

(Example 20)

A dicing tape-integrated adhesive sheet according to Example 20 was produced in the same manner as in Example 6 except that the amount of the antistatic agent contained in the adhesive sheet was 50 wt% with respect to the total resin components of the adhesive sheet. This was referred to as a dicing tape-integrated adhesive sheet T.

(Example 21)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. (Laminated substrate U) having an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, polyolefin based material) In some cases).

Next, the pressure-sensitive adhesive solution U was adjusted in the same manner as in the above-mentioned pressure-sensitive adhesive solution A, except that 5% by weight of the antistatic agent, product name: Perestat (manufactured by Sanyo Chemical Industries, Ltd.)

The pressure sensitive adhesive solution U prepared above was coated on the silicone treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate U and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet rays of 300 mJ / cm 2 were irradiated from the side of the laminated base material U using only an ultraviolet ray irradiation apparatus (manufactured by Nitto Seiki Co., Ltd. (product name: UM-810) Dicing tape U &quot; in some cases).

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded onto the pressure-sensitive adhesive layer of the dicing tape U using a hand roller to prepare an adhesive sheet U with a dicing tape.

(Example 22)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. (Laminated substrate V) (hereinafter referred to as &quot; laminated substrate V &quot;) in which an outermost layer (thickness: 20 mu m, polyolefin-based material), an intermediate layer (thickness: 40 mu m, polyolefin- In some cases).

Next, the pressure-sensitive adhesive solution V was adjusted in the same manner as in the above pressure-sensitive adhesive solution A, except that 10% by weight of the antistatic agent, product name: Perestat (manufactured by Sanyo Chemical Industries, Ltd.)

The pressure-sensitive adhesive solution V prepared above was coated on the silicone-treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate V and stored at 500 C for 24 hours. Subsequently, ultraviolet rays of 300 mJ / cm 2 were irradiated from the side of the laminated substrate V using an ultraviolet ray irradiating device (manufactured by Nitto Seiki Co., Ltd. (product name: UM-810)) only in a region where the semiconductor wafer was mounted, Dicing tape V &quot; in some cases).

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded to the pressure-sensitive adhesive layer of the dicing tape V using a hand roller to prepare an adhesive sheet V with a dicing tape.

(Example 23)

<Production of dicing tape>

First, a base material having a three-layer structure was produced. ("Laminated substrate W") in which an outermost layer (thickness: 20 μm, based on polyolefin), an intermediate layer (thickness: 40 μm, based on polyolefin) and an innermost layer In some cases).

Next, the pressure-sensitive adhesive solution W was adjusted in the same manner as in the above-mentioned pressure-sensitive adhesive solution A, except that 50% by weight of the antistatic agent, product name: Perestat (manufactured by Sanyo Chemical Industries, Ltd.)

The pressure sensitive adhesive solution W prepared above was coated on the silicone treated surface of a PET release liner and heated and crosslinked at 120 캜 for 2 minutes to form a pressure sensitive adhesive layer having a thickness of 30 탆. Subsequently, the pressure-sensitive adhesive layer surface was bonded to the innermost layer surface of the laminated substrate W and stored at 50 DEG C for 24 hours. Subsequently, ultraviolet light of 300 mJ / cm 2 was irradiated from the side of the laminated substrate W using only an ultraviolet ray irradiator (manufactured by Nitto Seiki Co., Ltd. (product name: UM-810)) only in a region where the semiconductor wafer was mounted, Dicing tape W &quot;).

&Lt; Preparation of adhesive sheet >

As the adhesive sheet, the same adhesive sheet A as that in Example 1 was used.

&Lt; Preparation of dicing tape integral type adhesive sheet &

The adhesive sheet A was bonded onto the adhesive layer of the dicing tape W using a hand roller to prepare an adhesive sheet W with a dicing tape.

<Measurement of Peeling Voltage>

A dicing tape-integrated adhesive sheet was bonded to an acrylic plate (thickness: 1 mm, width: 70 mm, length: 100 mm) which had been previously deaerated. For bonding, a hand roller was used, and the acrylic plate and the substrate of the dicing tape-integrated adhesive sheet were opposed to each other with the double-faced tape interposed therebetween.

After standing for one day under an environment of 23 DEG C and 50% RH, a sample was set at a predetermined position (see Fig. 2). The end portion of the adhesive sheet was fixed to the automatic winding machine and peeled off at a peeling angle of 150 ° and a peeling speed of 10 m / min. The potential at the side of the pressure-sensitive adhesive layer generated at this time was measured with a potential meter (KSD-0103, manufactured by Kasuga Denshiki) fixed at a predetermined position. The measurement was carried out in an environment of 23 ° C and 50% RH. The results are shown in Table 1.

<Measurement of peeling force>

A rectangular test piece having a length of 100 mm and a width of 20 mm was cut out from the dicing tape-integrated adhesive sheet. The test piece was stuck to an SUS plate and then peeled at an angle of peeling of 90 ° and a tensile rate of 300 mm / min under a condition of a temperature of 23 ° C using a peeling tester (trade name "Autograph AGS-J" manufactured by Shimadzu Corporation) , The adhesive sheet is peeled from the dicing tape (i.e., from the pressure-sensitive adhesive layer of the dicing tape) (peeled off from the interface between the adhesive sheet and the pressure-sensitive adhesive layer of the dicing tape), and the maximum load (The maximum value of the load excluding the peak top at the beginning of the measurement) was measured, and the maximum load was measured by the peeling force between the adhesive sheet and the pressure-sensitive adhesive layer of the dicing tape (the adhesive force of the pressure- ; N / 20 mm width). The results are shown in Table 1.

&Lt; Measurement of Surface Resistivity Value >

For Examples 1-5 and 13-17, the surface of the outermost layer side of the dicing tape, Examples 6, 7 and 18-20, the surface of the side of the adhesive sheet on the side in contact with the dicing tape, 8, 9 and 10, the dicing tape outermost layer, the surface of the wafer backside protective film on the side in contact with the dicing tape, Examples 11, 12 and 21-23, the surface of the pressure sensitive adhesive layer surface of the dicing tape The intrinsic resistance was measured. The surface resistivity was measured using a sample box TR-42 for high-resistance measurement of HiMeg ohmmeter TR-8601 manufactured by Advantest Co. under the conditions of 23 ° C and 60% RH, For 1 minute. The results are shown in Table 1.

1, 10 and 20: Dicing tape integrated semiconductor backing film
2: Flip-chip type semiconductor backing film (semiconductor backing film)
3: Dicing tape
31: substrate
32: pressure-sensitive adhesive layer
33: a portion corresponding to the adhesive portion of the semiconductor wafer
35, 36: Antistatic agent layer
4: Semiconductor wafer
5: Semiconductor chip
51: bumps formed on the circuit surface side of the semiconductor chip 5
6: adherend
61: a conductive material for bonding bonded to the connection pad of the adherend (6)
100: acrylic plate sample
102: Sample Stands

Claims (9)

A dicing tape-integrated adhesive sheet having a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate and an adhesive sheet formed on the pressure-sensitive adhesive layer,
The peel strength of the pressure-sensitive adhesive layer and the adhesive sheet in the peeling test at a peeling speed of 10 m / min and a peeling angle of 150 is 0.02 to 0.5 N /
Wherein the peeling electrification voltage at the time of peeling the adhesive layer and the adhesive sheet according to the conditions of the peeling test is 0.5 kV or less. The dicing tape-integrated adhesive sheet according to claim 1, wherein the adhesive sheet is a flip-chip type semiconductor backing film for forming on the back surface of a semiconductor element flip-chip bonded on an adherend. The dicing tape-integrated adhesive sheet according to claim 1, wherein the base material contains an antistatic agent. 4. The dicing tape-integrated adhesive sheet according to claim 3, wherein the substrate has a multilayer structure, and an antistatic agent is contained in at least one outermost layer of the multilayered substrate. The dicing tape-integrated adhesive sheet according to claim 1, wherein an antistatic agent layer containing an antistatic agent is formed on at least one side of the substrate. The dicing tape-integrated adhesive sheet according to claim 1, wherein the pressure-sensitive adhesive layer contains an antistatic agent. The dicing tape-integrated adhesive sheet according to claim 1, wherein the adhesive sheet contains an antistatic agent. A method of manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet according to any one of claims 1 to 7,
A step of adhering a semiconductor wafer onto the adhesive sheet in the dicing tape-integrated adhesive sheet,
A step of dicing the semiconductor wafer to form a semiconductor element,
And a step of picking up the semiconductor element from the pressure-sensitive adhesive layer of the dicing tape together with the adhesive sheet. A semiconductor device manufactured by using the dicing tape-integrated adhesive sheet according to any one of claims 1 to 7.

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