KR20130042830A - Led package of indirect illumination and method of manufacturing thereof, and illuminator using of the same - Google Patents

Abstract

The embodiment relates to an LED package of the indirect lighting type and a lighting device using the same. In this embodiment, indirect lighting is implemented directly at the LED package stage, thereby improving color uniformity and reducing glare. In addition, since the lighting device does not require a reflective layer, the size of the lighting device can be significantly reduced.
The LED package according to the embodiment includes a first substrate on which an electrode is formed, a second substrate disposed on a cavity edge of the first substrate, and a light emitting device disposed on the second substrate to face the electrode. The electrode inside the cavity has a structure inclined in one direction.

Description

LED package of Indirect Illumination and Method of Manufacturing Thereof, and Illuminator Using of the same}

Embodiments relate to an LED package implementing indirect lighting, a method of manufacturing the same, and a lighting device using the same.

In general, a light emitting diode (LED) is a semiconductor device capable of realizing various colors by forming a light emitting source using a compound semiconductor material such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP. Say.

Criteria for determining the characteristics of LED devices include high output light emission, luminance, and a range of emission colors. The characteristics of such LED devices are primarily determined by the compound semiconductor materials used in the LED devices. It is also greatly influenced by the structure of the package for mounting the chip. In order to obtain high luminance and luminance angle distribution according to user's demands, the primary factor due to material development is limited.

The package using the conventional ceramic substrate adversely affects the characteristics of the LED element because heat generated during high output light is radiated only through the electrode. Therefore, there has been a strong demand for LED packages that can efficiently dissipate heat from ceramic packages.

In addition, in the case of a lighting device (eg, a luminaire) using a conventional LED package, an indirect lighting method using reflected light is used. Merits utilizing indirect lighting have good light distribution characteristics and have no glare because there is no light directly entering the eyes. However, in the case of indirect lighting, since the reflective layer is required, the size of the lighting device is increased.

Domestic Patent No. 0845856 (Registration Date: 2008.07.07) Korean Registered Patent No. 0783563 (Registration Date: 2007.12.03) Domestic Patent No. 0422789 (Registration Date: 2004.03.02)

In order to solve the above problems, an embodiment of the present invention provides an indirect lighting type LED package, a method of manufacturing the same, and a lighting device using the same, which can reduce the size of a luminaire by implementing indirect lighting at the LED package stage. There is.

In addition, another technical problem to be achieved in the embodiment is to propose an indirect lighting type LED package using a light emitting element and an electrode facing each other and using the electrode as a reflector, a method of manufacturing the same and a lighting apparatus using the same.

In addition, another technical problem to be achieved in the embodiment, an indirect illumination type LED package and a method of manufacturing the same and an illumination device using the light emitting element and the electrode disposed oppositely formed a reflective layer (reflector) for diffuse reflection on the electrode To present.

In addition, another technical problem to be achieved in the embodiment is to provide an indirect illumination type LED package and a method of manufacturing the same and a lighting device using the light emitting element and the electrode disposed oppositely formed a concave-convex protective film on the electrode. have.

In addition, another technical problem to be achieved in the embodiment, the second substrate is disposed on the first substrate with the cavity is formed, the light emitting element is disposed on the second substrate facing the electrode and provided with an electrode inclined in one direction An indirect lighting type LED package, a method of manufacturing the same, and an illumination device using the same are provided.

In addition, another technical problem to be achieved in the embodiment is to provide an indirect lighting type LED package and a manufacturing method and a lighting device using the second substrate formed of a light transparent material of the second substrate disposed on the first substrate.

In addition, another technical problem to be achieved in the embodiment is to propose an LED package of the indirect lighting type in which a heat sink is disposed on a second substrate disposed on the first substrate, a manufacturing method thereof, and a lighting apparatus using the same.

The problem of the present invention is not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

As a means for solving the above-described technical problem, the LED package according to the embodiment, the first substrate on which the electrode is formed, the second substrate disposed on the cavity edge of the first substrate, the second substrate and the electrode and A light emitting device is disposed to face each other, and the electrode inside the cavity is formed to have a structure inclined in one direction.

Here, the LED package further includes a reflective layer formed on the electrode.

In addition, the LED package further includes a heat sink disposed on the second substrate.

In addition, the LED package further includes a heat sink disposed on the second substrate.

A metal layer may be disposed on the second substrate to electrically connect the electrode and the light emitting device. The electrode and the metal layer are at least one selected from the group consisting of Cu, Ag, Au, Ni, Al, Cr, Ru, Re, Pb, Cr, Sn, In, Zn, Pt, Mo, Ti, Ta, W It may consist of a species of metal or an alloy containing these metals.

In addition, the second substrate may be made of a transparent material. In addition, a transparent electrode layer may be disposed on the second substrate to electrically connect the electrode and the light emitting device. The transparent electrode layer includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx, RuOx / ITO , Ni / IrOx / Au and Ni / IrOx / Au / ITO.

The first and second substrates may be made of the same or different materials, and may be made of any one material of polymer, resin, ceramic, silicon, and metal.

A cavity is formed in the first substrate, and a circumferential surface constituting the cavity may be vertically formed or inclined with respect to an upper surface of the first substrate.

In addition, the electrode may be surface treated to be advantageous for color mixing of the light emitting device and used as a light reflection layer. The reflective layer may be formed of a transparent insulating material including a white solder resist and a white epoxy. The reflective layer may be formed of any one of silver (Ag), an alloy containing silver (Ag), aluminum (Al), and an alloy containing aluminum (Al). The reflective layer may be formed by coating phthalocyanine or made of a distributed bragg reflector (DBR).

In addition, the LED package may be a protective layer formed on the electrode. The protective layer may be formed of a transparent insulating material including a white solder resist and a white epoxy. The protective layer may have a concave-convex shape.

In addition, the LED package may be molded in the mold member in the mounting area of the light emitting device. The mold member may be formed of a light transmitting resin including a silicone resin or an epoxy resin. At least one kind of phosphor may be added to the light transmitting resin.

The LED package may be formed of any one of a vertical structure, a horizontal structure, and a flip chip structure, and may include a single chip or a multi-chip structure.

The light emitting device includes at least one of a colored LED chip and a UV LED chip, and includes a nitride semiconductor light emitting device including an LED having a pn or npn junction structure.

In addition, the lighting apparatus of the embodiment may include the LED package of the embodiment.

In addition, the method of manufacturing an LED package according to the embodiment, (a) forming a first substrate having a cavity, (b) forming an electrode on the cavity, (c) placing a light emitting element on the second substrate And (d) installing the second substrate on the edge of the cavity so that the light emitting device is opposite to the electrode, and the electrode has a structure inclined in one direction.

The manufacturing method of the LED package may further include forming a reflective layer on the electrode.

In addition, the method of manufacturing the LED package may further include disposing a heat sink on the second substrate.

In addition, the method of manufacturing the LED package may further include disposing a heat sink on the second substrate.

The method of manufacturing the LED package may further include forming a metal layer on the second substrate to electrically connect the electrode and the light emitting device.

In addition, the method of manufacturing the LED package may form the second substrate in a transparent material.

The method of manufacturing the LED package may further include forming a transparent electrode layer on the second substrate to electrically connect the electrode and the light emitting device.

In addition, the manufacturing method of the LED package may further include forming a protective layer of a transparent insulating material on the electrode.

In addition, the manufacturing method of the LED package may further include the step of molding a mold member in the mounting region of the light emitting device.

According to the embodiment, by implementing the indirect lighting directly in the LED package stage, the light distribution characteristics are good, there is no effect of light directly entering the eyes can reduce the glare.

In addition, in the case of a lighting device (luminaire) using an indirect lighting method, a reflection layer for reflecting light is not required, thereby reducing the size of the lighting device drastically.

In addition, there is an effect that can efficiently emit heat generated from the LED to improve the reliability of the LED.

In addition, there is an effect that can improve the luminance characteristics through the material and surface treatment of the reflector (Reflector) implemented for indirect lighting.

The effects of the present invention are not limited to those mentioned above, and other effects not mentioned above will be clearly understood by those skilled in the art from the following description.

1 to 3 is a view showing an LED package of the indirect lighting type according to the first embodiment,
1 is a perspective view,
2 is a cross-sectional view,
3 is a side cross-sectional view.
4 to 6 is a view showing an LED package of the indirect lighting type according to the second embodiment,
4 is a perspective view,
5 is a cross-sectional view,
6 is a side cross-sectional view.
7 and 8 are views illustrating an LED package of the indirect lighting type according to the third embodiment,
7 is a cross-sectional view,
8 is a side cross-sectional view.
9 and 10 are diagrams illustrating an LED package of the indirect illumination type according to the fourth embodiment,
9 is a cross-sectional view,
10 is a side cross-sectional view.
11 to 17 are views illustrating a manufacturing process of a vertical LED package according to an embodiment

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the (up) or down (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

LED  First embodiment of the package

1 to 3 are diagrams illustrating an LED package of the indirect lighting type according to the first embodiment, FIG. 1 is a perspective view, FIG. 2 is a front sectional view, and FIG. 3 is a side sectional view.

In the LED package of the indirect lighting type according to the first embodiment, as shown in FIGS. 1 to 3, the first substrate 300, the first electrode 310, the second electrode 320, and the lead unit ( 330, a second substrate 400, a metal layer 410, a light emitting device 420, a wire 430, and a mold member (not shown).

Here, a cavity is formed in the first substrate 300, and the light emitting element 420 is disposed in the second substrate 400. The second substrate 400 is disposed above the edge of the cavity of the first substrate 300, and the first and second electrodes 310 and 320 inside the cavity are formed to be inclined in one direction. That is, the first and second electrodes 310 and 320 are formed lower toward the opposite side from the lower portion of the light emitting device 420. At this time, the electrode formed on the lower side of the light emitting element 420 is formed vertically, the electrode formed on the opposite side is formed inclined according to the cavity shape.

The first substrate 300 serves as a body of the LED package, and may be configured using a polymer material, a resin material, a ceramic material, a silicon material, or the like. The LED package may be classified into a plastic package, a ceramic package, a metal package, a silicon package, and the like according to a material used as a substrate. Which material to use as the substrate can be selected in consideration of the heat dissipation effect, the possibility of mass production, the cost, the characteristics of other components, the purpose and use of the product, and other matters.

For example, when silicon is used as the substrate material for the LED package, the package can be manufactured by stacking in multiple layers, and a circuit can be mounted between the stacks. In addition, in the case of using a silicon substrate, there is an advantage that the dependence of the reflectance by the emission wavelength is low and can be manufactured in an integrated form at the wafer level, thereby enabling mass production of multiple products.

The first substrate 300 may be formed by injection molding a press (Cu / Ni / Ag substrate) into a polymer material, a resin material, a ceramic material, a silicon material, and the like, and a cavity is formed. In this case, the circumferential surface constituting the cavity may be vertically formed or inclined with respect to the upper surface of the first substrate 300. The bottom surface of the cavity has a structure inclined in one direction as shown in the cross section of FIG. 2. That is, the cavity is formed to have a lower height toward the opposite side from the lower portion of the second substrate 400.

Meanwhile, a driving circuit (not shown) for driving the light emitting device 420 may be mounted in the first substrate 300. The driving circuit serves to drive the light emitting device to perform a desired function according to the purpose and use of the LED package.

In addition, an insulating layer (not shown) may be disposed on the first substrate 300. The insulating layer serves to block electrical connection between the first substrate 300 and the first and second electrodes 310 and 320. However, when the first substrate 300 is made of a non-conductive material, an insulating layer may not be formed.

Similarly, an insulating layer may be disposed below the first substrate 300 to block electrical connection between the first substrate 300 and the lead unit 330. However, when the first substrate 300 is made of a non-conductive material as described above, the insulating layer may not be disposed.

The first and second electrodes 310 and 320 may be disposed on the first substrate 300 or the insulating layer. The first and second electrodes 310 and 320 may be electrically connected to the light emitting device 420, and may be patterned to be electrically connected to a driving circuit for driving the light emitting device 420. That is, the first and second electrodes 310 and 320 serve as electrical conductors that connect components between the LED packages. The first and second electrodes 310 and 320 may be formed of an anode and a cathode electrode for driving the light emitting device 420.

As shown in FIG. 2, the first and second electrodes 310 and 320 may have a vertical surface and an inclined surface according to the shape of the cavity formed in the first substrate 300. However, it may be formed perpendicularly or inclined with respect to the upper surface of the first substrate 300 along the circumferential surface forming the cavity.

The bottom surface of the cavity is formed in a structure inclined in one direction, as shown in FIG. That is, the lower the lower portion of the light emitting device 420 is formed toward the opposite side. Accordingly, the first and second electrodes 310 and 320 are also formed to be inclined in one direction. The reason for forming the first and second electrodes 310 and 320 in the inclined structure is to reflect the light of the heating element 420 to the outside without being disturbed by the second substrate 400.

Subsequently, the first and second electrodes 310 and 320 serve to reflect light emitted from the light emitting element 420. To this end, the first and second electrodes 310 and 320 may be surface treated to be advantageous for mixing color light emitted from the light emitting device 420.

The first and second electrodes 310 and 320 are electrically separated from each other, and serve to provide power to the light emitting device 420. In addition, the first and second electrodes 310 and 320 reflect light generated by the light emitting device 420 to increase light efficiency, and discharge heat generated from the light emitting device 420 to the outside. It also serves as heat dissipation.

The light emitting device 420 will be described later in detail, but may be disposed at positions opposite to the first and second electrodes 310 and 320. That is, the light of the light emitting device 420 may be configured to be reflected and output on the surfaces of the first and second electrodes 310 and 320.

As described above, the second substrate 400 on which the light emitting device 420 is disposed is provided on the cavity edge of the first substrate 300. In this case, the second substrate 400 may be made of the same material or different materials as the first substrate 300. For example, the first and second substrates 300 and 400 may be made of any one material of polymer, resin, ceramic, and metal.

The LED package may have a vertical structure, a horizontal structure, or a flip chip structure according to the arrangement of the light emitting device 420 mounted on the second substrate 400.

In addition, an insulating layer (not shown) may be disposed below the second substrate 400 based on the drawings. The insulating layer serves to block electrical connection between the second substrate 400 and the metal layer 410. However, when the second substrate 400 is made of a non-conductive material, an insulating layer may not be formed.

In addition, the metal layer 410 may be disposed under the second substrate 400. The metal layer 410 is patterned to be electrically connected between the light emitting device 420 and the first and second electrodes 310 and 320 of the first substrate 300. Here, the metal layer 410 is selected from the group containing Cu, Ag, Au, Ni, Al, Cr, Ru, Re, Pb, Cr, Sn, In, Zn, Pt, Mo, Ti, Ta, W At least one metal or these metals may be composed of an alloy.

Subsequently, based on the drawing, the light emitting device 420 may be disposed under the metal layer 410. The LED package of the embodiment may include at least one light emitting device. That is, the light emitting device 420 is only an example according to the embodiment, and the light emitting device may be further disposed according to a desired purpose and design change. As a result, the LED package may be implemented in a single chip or a multi-chip structure.

The light emitting device 420 may be implemented as a blue LED chip or an ultraviolet LED chip. In addition, the light emitting device 420 may be configured in a package form of one or more combinations of a red LED chip, a green LED chip, a blue LED chip, a yellow green LED chip, and a white LED chip.

One or more light emitting devices 420 may be mounted on the metal layer 410 of the second substrate 400, and a protection device such as a zener diode may be mounted to protect the light emitting devices 420.

The light emitting device 420 may be a horizontal type light emitting device or a vertical type light emitting device illustrated in FIGS. 29 and 30, and may also have a flip chip structure. Therefore, the light emitting device 420 is mounted on the metal layer 410 by wire bonding or flip chip bonding according to the structure of the LED package.

The light emitting device 420 may be installed on the second substrate 400 or the metal layer 410. In this case, when the light emitting device 420 has a horizontal or vertical structure, the light emitting device 420 may be electrically connected to the metal layer 410 through a wire 430, and the metal layer 410 may be formed of the first electrode 310 and the first electrode. The second electrode 320 may be electrically connected to the second electrode 320.

In the first exemplary embodiment shown in FIGS. 1 to 3, since the vertical type light emitting device 420 is illustrated, one wire 430 is bonded. As another example, two wires may be used when the light emitting device 420 is a horizontal type light emitting device, and wires may not be used when the light emitting device 420 is a flip chip type light emitting device.

The second substrate 400 on which the light emitting device 420 is disposed is bonded to and installed on the first substrate 300 on which the first and second electrodes 310 and 320 are disposed. In this case, the second substrate 400 is installed on the cavity edge of the first substrate 300 so that the light emitting device 420 faces the first and second electrodes 310 and 320. Here, the light emitting device 420 is disposed to reflect light through the inclined portions of the first and second electrodes 310 and 320.

Next, a mold member (not shown) may be injected into the cavity inner region to which the first substrate 300 and the second substrate 400 are connected to be molded. The mold member may be formed of a light transmissive resin such as silicone or epoxy. The surface of the translucent resin may be formed of any one of a concave shape, a flat shape, and a convex shape. At least one kind of phosphor may be added to the light transmitting resin, and the phosphor may selectively include a red phosphor, a green phosphor, a yellow phosphor, and the like, but is not limited thereto. After the mold member is injected into the cavity, the mold member is hardened.

Meanwhile, in the LED package of the first embodiment, a protective layer may be formed on the first and second electrodes 310 and 320. In this case, the protective layer may be configured in an irregular shape for diffuse reflection of light. The protective layer may be used as a reflective layer of light together with protecting the first and second electrodes 310 and 320. The protective layer may be formed of a transparent insulating material including a white solder resist and a white epoxy.

According to the first exemplary embodiment, the second substrate 400 including the light emitting element 420 is disposed on the upper edge of the cavity of the first substrate 300 on which the electrode is formed to face the electrode. By forming the electrode in a structure inclined in one direction, it is possible to improve the light efficiency during indirect illumination using a light emitting device.

LED  Second embodiment of the package

4 to 6 are views illustrating an LED package of the indirect lighting type according to the second embodiment. FIG. 4 is a perspective view, FIG. 5 is a front sectional view, and FIG. 6 is a side sectional view.

As shown in FIGS. 4 to 6, the LED package according to the second embodiment has a structure in which a heat sink 440 is disposed on the second substrate 400 in the structure of the sixth embodiment.

The heat sink 440 serves to discharge heat generated from the light emitting device 420 disposed on the second substrate 400 to the outside. To this end, the heat sink 440 dissipates heat transferred from the light emitting element 420 through the second substrate 400, but the metal layer (eg, through the inside of the second substrate 400). 410 or the light emitting element 420 may be connected to a conductive material.

According to the second embodiment of the present invention, the heat sink 440 is installed on the second substrate 400 to dissipate heat of the light emitting device 420 in the first embodiment, thereby indirect lighting using the light emitting device. The light efficiency and heat dissipation effect can be improved.

LED  Third embodiment of the package

7 and 8 are diagrams illustrating an LED package of the indirect lighting type according to the third embodiment, FIG. 7 is a front sectional view, and FIG. 8 is a side sectional view.

As shown in FIGS. 7 and 8, the LED package of the third embodiment forms a reflective layer 340 on the first and second electrodes 310 and 320 of the first substrate 300 in the structure of the third embodiment. It is a structure.

Here, the reflective layer 340 is formed of a transparent insulating material, and serves to protect the first and second electrodes 310 and 320 and to prevent the light reflectance from decreasing.

The reflective layer 340 may be printed by applying a transparent insulating material including a white solder resist and a white epoxy. In addition, the reflective layer 340 may be formed of any one of silver (Ag), an alloy containing silver (Ag), aluminum (Al), and aluminum (Al). In addition, the reflective layer 340 may be formed by coating phthalocyanine, or may be formed by a distributed bragg reflector (DBR). In addition, the reflective layer 340 may be formed of a stacked structure of Ni and Ag or a stacked structure of Ni, Pd and Ag.

According to the third exemplary embodiment having the above configuration, the reflective layers 340 may be formed on the first and second electrodes 310 and 320 of the first exemplary embodiment to further improve light efficiency during indirect illumination using the light emitting device.

LED  4th embodiment of the package

9 and 10 are diagrams illustrating an LED package of the indirect lighting type according to the fourth embodiment. FIG. 9 is a front sectional view and FIG. 10 is a side sectional view.

As shown in FIGS. 9 and 10, the LED package according to the fourth embodiment has a structure in which a heat sink 440 is disposed on the second substrate 400 in the structure of the third embodiment. That is, the fourth embodiment combines the second embodiment and the third embodiment.

As described above, the reflective layer 340 is formed of a transparent insulating material, and serves to protect the first and second electrodes 310 and 320 and prevent the light reflectance from decreasing. In addition, the heat sink 440 serves to discharge heat generated from the light emitting element 420 disposed on the second substrate 400 to the outside.

According to the fourth exemplary embodiment, the reflective layer 340 is formed on the electrode of the first substrate 300, and the light emitting device 420 is disposed on the reflective layer 340 of the first substrate 300 to face the reflective layer 340. And a heat sink 440 on the second substrate 400 to dissipate heat of the light emitting device 420, thereby providing indirect lighting at the LED package stage. In addition, the light efficiency and heat dissipation effect can be improved.

LED  5th embodiment of the package

In the LED package according to the fifth embodiment, the second substrate 400 is formed of a transparent substrate in the structures of the first to fourth embodiments, and the second package 400 is formed between the second substrate 400 and the light emitting device 420. The metal layer 410 is formed by forming a transparent electrode layer.

In the fifth embodiment, since the second substrate 400 and the metal layer 410 are made of a light-transmitting material, light efficiency can be improved. That is, since the light reflected from the first and second electrodes 310 and 320 is also output through the metal layer 410 and the second substrate 400, the second substrate 400 and the metal layer 410 made of an opaque material. ), The light transmittance can be increased.

The transparent electrode layer includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx, RuOx / ITO , Ni / IrOx / Au and Ni / IrOx / Au / ITO.

Here, in the case of the second and fourth embodiments in which the heat sink 440 is installed on the second substrate 400, the size of the heat sink 440 is smaller than that of the second substrate 400 or the It may be configured only in a partial region of the second substrate 400. For example, by forming the heat sink 440 only at an edge portion of the second substrate 400, light may be output through the second substrate 400 and the metal layer 410. In addition, the heat sink 440 may be formed of a light transmissive material.

According to the fifth embodiment of the present invention, in the first to fourth embodiments, the second substrate 400 is formed of a transparent substrate and the metal layer 410 is formed of a transparent electrode layer, thereby indirectly illuminating the LED package. It is possible to improve the light efficiency and light transmittance.

LED  First Embodiment of Package Manufacturing Method

1 to 3, a first embodiment of a method of manufacturing an LED package includes forming a first substrate 300 having a cavity, and forming first and second electrodes 310 and 320 on the cavity. And disposing a light emitting device 420 on the second substrate 400, and the second light emitting device 420 on the edge of the cavity so that the light emitting device 420 faces the first and second electrodes 310 and 320. Installing the substrate 400. In this case, the first and second electrodes 310 and 320 have a structure inclined in one direction.

LED  Second Embodiment of Package Manufacturing Method

4 to 6, a second embodiment of a method of manufacturing an LED package includes forming a first substrate 300 having a cavity, and forming first and second electrodes 310 and 320 on the cavity. And disposing a light emitting device 420 on the second substrate 400, disposing a heat sink 440 on the second substrate 400, and the light emitting device 420. And installing the second substrate 400 on the edge of the cavity to face the second electrodes 310 and 320. In this case, the first and second electrodes 310 and 320 have a structure inclined in one direction.

LED  Third Embodiment of Package Manufacturing Method

7 and 8, a third embodiment of a method of manufacturing an LED package includes forming a first substrate 300 having a cavity, and forming first and second electrodes 310 and 320 on the cavity. Forming a reflective layer 340 on the first and second electrodes 310 and 320, disposing a light emitting device 420 on the second substrate 400, and allowing the light emitting device 420 to And installing the second substrate 400 on the center of the cavity to face the first and second electrodes 310 and 320. In this case, the first and second electrodes 310 and 320 have a structure inclined in one direction.

LED  Fourth Embodiment of Package Manufacturing Method

9 and 10, a fourth embodiment of a method of manufacturing an LED package includes forming a first substrate 300 having a cavity, and forming first and second electrodes 310 and 320 on the cavity. Forming a reflective layer 340 on the first and second electrodes 310 and 320, disposing a light emitting device 420 on the second substrate 400, and forming a light emitting element 420 on the second substrate 400. Disposing a heat sink 440 and installing the second substrate 400 on the center of the cavity so that the light emitting device 420 faces the first and second electrodes 310 and 320. do. In this case, the first and second electrodes 310 and 320 have a structure inclined in one direction.

Here, the first to fourth embodiments of the LED package manufacturing method, the metal layer 410 for electrically connecting the first and second electrodes 310 and 320 and the light emitting element 420 to the second substrate 400. It may further comprise the step of forming).

In addition, the second substrate 400 is formed of a transparent material, and a transparent electrode layer is formed on the second substrate 400 to electrically connect the first and second electrodes 310 and 320 to the light emitting device 420. It may further comprise the step.

The method may further include forming a protective layer of a transparent insulating material on the first and second electrodes 310 and 320.

The method may further include molding a mold member in a mounting area of the light emitting device.

Next, a manufacturing process of the vertical LED package according to the embodiment will be described with reference to FIGS. 11 to 17.

First, referring to FIG. 11, a first substrate 300 having a plurality of cavities 301 is formed. In this case, the first substrate 300 may be formed of a polymer material, a resin material, a ceramic material, a silicon material, or the like, and may be formed by an injection molding method using a press (Cu / Ni / Ag substrate). Here, the circumferential surface constituting the cavity 101 may be formed vertically or inclined with respect to the upper surface of the first substrate 300. In addition, the bottom surface of the cavity 301 may be formed in a structure in which both sides are inclined about the center portion or in a structure inclined in one direction.

Thereafter, a driving circuit (not shown) for driving the light emitting device 420 may be mounted in the first substrate 300. The driving circuit serves to drive the light emitting device to perform a desired function according to the purpose and use of the LED package.

Thereafter, an insulating layer (not shown) may be formed on and under the first substrate 300, respectively. The insulating layer is formed to insulate the first and second electrodes 310 and 320 and the lead portion 330 formed thereafter from the first substrate 300. If the first substrate 300 is made of a non-conductive material, the insulating layer may not be formed.

Thereafter, the first and second electrodes 310 and 320 are formed on the first substrate 300 or the insulating layer. In this case, the first and second electrodes 310 and 320 formed on the cavity 301 of the first substrate 300 may be formed in a structure in which both sides thereof are inclined with respect to the center part according to the shape of the cavity 301. It may be formed in a structure inclined in the direction.

The first and second electrodes 310 and 320 are composed of an anode electrode and a cathode electrode for driving the light emitting device 420, and the cavity formed in the first substrate 300 as shown in FIG. 12. 301 is arranged in pairs each. In this case, the first and second electrodes 310 and 320 may be surface treated to be advantageous in mixing color light emitted from the light emitting device 420.

Subsequently, a manufacturing method of the second substrate 400 will be described with reference to FIGS. 13 to 17.

First, as described above, the LED package has a vertical structure, a horizontal structure, or a flip chip structure according to the arrangement of the light emitting device 420. In the drawings of the embodiment shows an example of the vertical structure.

When the LED package has a vertical structure, as shown in FIGS. 13 to 17, the second substrate 400 has mounting brackets on which the light emitting devices 420 are disposed, the first and second electrodes 310 and 320. It is vertically connected inside the rectangle's border so that it is perpendicular to the. On the contrary, in the horizontal structure, the mounting table on which the light emitting device 420 is disposed is horizontally connected to the first and second electrodes 310 and 320 so as to be horizontally in the rectangular frame.

In this case, the second substrate 400 may be made of a polymer material, a resin material, a ceramic material, a silicon material, or the like as the first substrate 300, or may be configured using another material. The second substrate 200 formed of such a material may be formed by an injection molding method using a press (Cu / Ni / Ag substrate).

15 and 16, a metal layer 410 is formed on the mounting table of the second substrate 400. In this case, the metal layer 410 may be patterned for electrical connection between the light emitting device 420 and the first and second electrodes 310 and 320 of the first substrate 300.

Thereafter, at least one light emitting device 420 is disposed on the metal layer 410. In addition, a protection device such as a zener diode may be mounted on the metal layer 410 to protect the light emitting device 420.

In this case, the light emitting device 420 may be mounted using a wire bonding or flip chip bonding method using a wire 430 according to the structure of the LED package. For example, in the vertical type as illustrated in FIG. 16, the light emitting device 420 is bonded using one wire 430, but two wires may be used in the horizontal type. In the flip chip method, wires may not be used.

Thereafter, as shown in FIG. 27, the second substrate 400 is installed on the first substrate 300 such that the light emitting device 420 faces the first and second electrodes 310 and 320. In this case, the light emitting device 420 is disposed perpendicular to the length direction of the first and second electrodes 310 and 320 to form a vertical structure.

Finally, a mold member (not shown) is introduced into the cavity 301 to which the first substrate 300 and the second substrate 400 are connected to be molded. Then, the mold member is injected into the cavity and then cured.

The mold member may be formed of a translucent resin such as silicone or epoxy. In addition, the surface of the translucent resin may be formed in any one of a concave shape, a flat shape, and a convex shape. At least one phosphor may be added to the translucent resin to change the wavelength of light emitted from the light emitting device 420. The phosphor may optionally include a red phosphor, a green phosphor, a yellow phosphor, and the like.

In addition, a lens (not shown) may be formed on the cavity 301. For example, the lens may have a convex lens shape on the light-transmissive resin, and may be formed separately from the light-transmissive resin or integrally formed with the light-transmissive resin.

In addition, a fluorescent film having at least one type of phosphor may be disposed on the cavity 301. The lens may be changed into various shapes for light extraction efficiency.

In addition, on the transparent resin material, a silicone gel including phosphors or an epoxy having excellent light transmittance may be formed on a desired region or an upper surface by using a screen printing method.

Lighting equipment

The LED package of the embodiment can be applied to various kinds of LED lighting apparatus.

Here, as described in the embodiment, the LED package implements indirect lighting in the package stage, and includes a vertical structure, a horizontal structure, and a flip chip structure. In addition, the LED package may be applied to a single chip or a multi-chip.

The LED lighting device including the LED package of the embodiment does not need a reflector because it uses indirect lighting in the LED package stage. Therefore, the size of the lighting device (luminaire) can be significantly reduced.

As described above, the LED package, the manufacturing method thereof, and the lighting apparatus using the same may be implemented by indirectly illuminating the light emitting device and the electrode at the LED package stage, thereby solving the technical problem of the present invention.

Although the above description has been made with reference to the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains are not illustrated above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

The moving indirect lighting type LED package according to the embodiment can be applied to an LED light source module, a lighting device, and the like.

300: first substrate 301: cavity
310: first electrode 320: second electrode
330: lead portion 340: reflective layer
400: second substrate 410: metal layer
420: light emitting element or LED chip 430: wire
440 heat sink

Claims (34)

A first substrate on which electrodes are formed;
A second substrate disposed above the cavity edge of the first substrate; And
And a light emitting device disposed on the second substrate so as to face the electrode.
The electrode inside the cavity is a LED package having a structure inclined in one direction.
The LED package of claim 1, wherein the LED package is:
The LED package further comprises a reflective layer formed on the electrode.
The LED package of claim 2, wherein the LED package is:
The LED package further comprises a heat sink disposed on the second substrate.
The LED package of claim 1, wherein the LED package is:
The LED package further comprises a heat sink disposed on the second substrate.
The method of claim 1,
And a metal layer on the second substrate to electrically connect the electrode and the light emitting element.
The method of claim 5, wherein
The electrode and the metal layer are at least one selected from the group consisting of Cu, Ag, Au, Ni, Al, Cr, Ru, Re, Pb, Cr, Sn, In, Zn, Pt, Mo, Ti, Ta, W LED package consisting of a metal of a species or an alloy containing these metals.
The method of claim 1,
The second substrate is an LED package composed of a transparent material.
The method of claim 7, wherein
And a transparent electrode layer disposed on the second substrate to electrically connect the electrode and the light emitting element.
The method of claim 8,
The transparent electrode layer includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx, RuOx / ITO LED package comprising at least one of Ni / IrOx / Au and Ni / IrOx / Au / ITO.
The method of claim 1,
The first and second substrates are made of the same or different materials, LED package made of any one material of polymer, resin, ceramic, silicon, metal.
The method of claim 1,
A cavity is formed in the first substrate,
The LED package of the circumferential surface forming the cavity is formed perpendicular to the top surface of the first substrate or inclined.
The method of claim 1,
The electrode is a surface-treated to favor the color mixing of the light emitting device (LED) package is used as a light reflection layer.
3. The method of claim 2,
The reflective layer is a LED package formed of a transparent insulating material including a white solder resist (white solder resist), white epoxy (white epoxy).
3. The method of claim 2,
The reflective layer is an LED package formed of any one of silver (Ag), an alloy containing silver (Ag), aluminum (Al), an alloy containing aluminum (Al).
3. The method of claim 2,
The reflective layer is formed by coating a phthalocyanine (phthalocyanine) or LED package consisting of a distributed bragg reflector (DBR).
The LED package of claim 1, wherein the LED package is:
LED package formed with a protective layer on the electrode.
17. The method of claim 16,
The protective layer is a LED package formed of a transparent insulating material including a white solder resist (white solder resist), white epoxy (white epoxy).
17. The method of claim 16,
The protective layer is an LED package having an uneven shape.
The LED package of claim 1, wherein the LED package is:
An LED package in which a mold member is molded in a mounting area of the light emitting device.
The method of claim 19,
The mold member is a LED package formed of a translucent resin comprising a silicone resin or an epoxy resin.
21. The method of claim 20,
The light-transmitting resin is an LED package to which at least one type of phosphor is added.
The method of claim 1,
The LED package is an LED package consisting of any one of a vertical structure, a horizontal structure, and a flip chip structure.
The method of claim 1,
The LED package is a LED package having a single chip (multi chip) or a multi-chip (Multi-chip) structure.
The method of claim 1,
The light emitting device includes at least one of a colored LED chip and a UV LED chip.
The method of claim 1,
The light emitting device is a nitride semiconductor light emitting device including an LED having a pn or npn junction structure.
A lighting device comprising the LED package according to any one of claims 1 to 25.
(a) forming a first substrate having a cavity;
(b) forming an electrode over the cavity;
(c) disposing a light emitting element on the second substrate; And
(d) installing the second substrate on an edge of the cavity so that the light emitting device is opposite to the electrode;
The electrode is a manufacturing method of the LED package having a structure inclined in one direction.
28. The method of claim 27, wherein the manufacturing method of the LED package is:
Forming a reflective layer on the electrode further comprising the manufacturing method of the LED package.
28. The method of claim 27, wherein the manufacturing method of the LED package is:
And disposing a heat sink over the second substrate.
28. The method of claim 27, wherein the manufacturing method of the LED package is:
And forming a metal layer on the second substrate to electrically connect the electrode and the light emitting device.
28. The method of claim 27, wherein the manufacturing method of the LED package is:
The method of manufacturing an LED package to form the second substrate to a transparent material.
The method of claim 31, wherein the manufacturing method of the LED package,
Forming a transparent electrode layer for electrically connecting the electrode and the light emitting device on the second substrate.
28. The method of claim 27, wherein the manufacturing method of the LED package is:
The manufacturing method of the LED package further comprising the step of forming a protective layer of a transparent insulating material on the electrode.
28. The method of claim 27, wherein the manufacturing method of the LED package is:
The method of manufacturing an LED package further comprising the step of molding a mold member in the mounting region of the light emitting device.

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