KR20100063147A - Vacuum processing apparatus and substrate processing method - Google Patents

Abstract

The vacuum processing apparatus 1 of this invention is a vacuum processing apparatus 1 by which the process chamber which performs predetermined | prescribed process with respect to the to-be-processed board | substrate S is connected in series in multiple numbers, The vacuum processing apparatus is a vacuum processing apparatus. 2nd board | substrate which is parallel to the 1st board | substrate conveyance path 15 and the 1st board | substrate conveyance path 15 formed between several process chambers of conveyance, and conveys a board | substrate, and the predetermined process in each process chamber is performed. The conveyance path 16 is formed and the conveyance path changing means 17 for moving a board | substrate between a 1st board | substrate conveyance path and a 2nd board | substrate conveyance path is formed in at least two process chambers among several process chambers. .

Description

VACUUM PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD}

The present invention relates to a vacuum processing apparatus and a substrate processing method.

Conventionally, as a vacuum processing apparatus formed into a film on large substrates, such as for a plasma display, there exists a what is called a vertical conveyance type vacuum processing apparatus (for example, refer patent document 1). This apparatus is a vertical vacuum processing apparatus including three film formation chambers, a substrate carrier, and a load lock chamber. In the load lock chamber and three film formation chambers, two conveyance paths, a return path and a return path, are formed. The transfer mechanism which moves a board | substrate carrier horizontally with respect to these conveyance paths, and transfers it from the 1st conveyance path which becomes a return path to the 2nd conveyance path which becomes a return is carried out to the film-forming room of the last part. It is provided with the structure provided. That is, in this apparatus, the vacuum processing chamber is formed for each film-forming process, and is comprised so that three films may be laminated | stacked on the board | substrate.

Patent Document 1: Japanese Patent Application Laid-Open No. 2005-340425 (See Claims 1 and 1)

In the film-forming apparatus, when a heating apparatus is attached between two conveyance paths and a transfer mechanism is provided in the last vacuum processing chamber, space saving and cost reduction can be achieved.

However, with the further enlargement of the substrate, a more space-saving and compact apparatus is desired. In the film forming apparatus, since the processing route is one route, it is impossible to change the route in the intermediate processing chamber. For this reason, when film-forming time of each film-forming chamber differs, waiting time may generate | occur | produce in another film-forming chamber during operation of a film-forming room with a long film-forming time, and there existed a problem that the operation rate may fall as the whole apparatus. Moreover, since the transfer mechanism is provided in the last film-forming chamber, a board | substrate carrier cannot change a conveyance path | route unless a board | substrate is conveyed to this last film-forming chamber. As a result, the substrate carrier cannot be moved back and forth, and there is a problem that the apparatus cannot be operated when the last film forming chamber is maintained even if there is no abnormality in the other film forming chambers.

Then, the subject of this invention is providing the more compact vacuum processing apparatus in view of the problem of the said prior art. Another object of the present invention is to provide a vacuum processing apparatus having high operability and excellent functionality. Moreover, another subject of this invention is providing the substrate processing method which can process a board | substrate without extending tact time using this vacuum processing apparatus.

A vacuum processing apparatus of the present invention is a vacuum processing apparatus in which a plurality of processing chambers for performing a predetermined processing on a substrate to be processed are connected in series, wherein the vacuum processing apparatus includes a plurality of processing chambers formed between a plurality of processing chambers of a vacuum processing apparatus. A second substrate conveying path parallel to the first substrate conveying path and the first substrate conveying path and conveying the substrate and subjected to a predetermined process in each processing chamber is formed, and at least two of the plurality of processing chambers are formed. A conveyance path changing means for moving the substrate between the first substrate conveyance path and the second substrate conveyance path is formed in the processing chamber.

The vacuum processing apparatus of this invention forms a conveyance path changing means in at least two process chambers, and is predetermined even if the board | substrate was on the 1st substrate conveyance path at the time of board | substrate conveyance in the process chamber in which this conveyance path change means was formed. Since it can move in the 2nd board | substrate conveyance path in which a process is performed, the same process can be performed in multiple times. Therefore, since it is not necessary to form two or more process chambers which perform the same process, the apparatus of this invention is compact. For example, when three layers are formed in order of A film | membrane, B film | membrane, and A film | membrane, three conventional film | membrane type | mold conveying vacuum processing apparatus connected three film-forming processing chambers connected in order of the A film | membrane processing chamber, the B film | membrane processing chamber, and the A film | membrane processing chamber. Although required, in this case, two film-forming processing chambers, the A film processing chamber and the B film processing chamber, may be sufficient.

It is preferable that the said conveyance path change means is provided in the last process chamber connected in series and at least 1 film-forming process chamber other than the last process chamber among the said process chambers. Since the conveyance path changing means is formed not only in the last processing chamber but also in the film forming processing chamber that is not the last part, the same film can be formed in one film forming processing chamber, so that the vacuum treatment is performed when the film forming method of forming a plurality of the same films is performed. It is not necessary to form a plurality of film formation processing chambers for one device. In this case, since a large power supply, a film forming means, and the like are required to form the film forming processing chamber, if the film forming processing chamber can be omitted, further compactness, less utility, and further cost reduction can be achieved.

The vacuum processing apparatus includes a load lock chamber, a heating chamber, a first film forming chamber, and a second film forming chamber, wherein the conveying path changing means is formed in the first film forming chamber and the second film forming chamber, It is preferable that the film-forming processing chamber and the 2nd film-forming processing chamber are comprised so that mutually different films may be formed. According to this structure, three layers of film can be formed by two film-forming processing chambers.

In the substrate processing method of the present invention, a plurality of processing chambers that perform predetermined processing on a substrate are connected in series, and are parallel to the first substrate conveying path and the first substrate conveying path formed between the plurality of processing chambers. And a second substrate conveying path on which a predetermined process is performed on the substrate in each processing chamber while conveying the substrate, and a substrate is placed in at least two processing chambers among the plurality of processing chambers. A 1st substrate conveyance path as a substrate processing method of performing predetermined process with respect to a board | substrate in each process chamber using the vacuum processing apparatus in which the conveyance path change means for moving between a conveyance path and a 2nd substrate conveyance path is provided. And a substrate processing method for carrying in a substrate into each processing chamber through a second substrate conveying path and performing a predetermined processing in each processing chamber, wherein the first apparatus is used in one processing chamber. In the first substrate processing step of performing a predetermined treatment on a plate, in the first processing chamber in one processing chamber, and in the other processing chamber, in the first substrate processing step of performing a predetermined processing on a second substrate. Another substrate processing step of performing a predetermined process on the first substrate and the third substrate on which the predetermined process has been performed, and a predetermined process on the third substrate which has been subjected to the predetermined process in the other substrate processing step in one processing chamber. It has a 3rd substrate processing process which implements, The said other substrate processing process is performed during the said 2nd substrate processing process, In the said other substrate processing process, The said other processing chamber is carried out by the conveyance path changing means formed in the said other processing chamber. Moving at least one of a 1st board | substrate and a 3rd board | substrate carried in in between the said 1st board | substrate conveyance path and the said 2nd board | substrate conveyance path. It characterized.

According to the substrate processing method of the present invention, it is possible to form a film on the remaining two substrates in another processing chamber while performing a predetermined process on one substrate in one processing chamber, so that there is no unnecessary tact time and at a high operation rate, Multilayer film formation can be performed.

In this case, specifically, in the said other substrate processing process, the said 1st board | substrate is carried in to the said other processing chamber via a 1st board | substrate conveyance path, and after that, the said 1st board | substrate conveyance path by the said conveyance path changing means. A predetermined process is performed after being moved from the second substrate conveyance path to the second substrate conveyance path, and after the predetermined process is finished, the process of carrying out from the other process chamber through the second substrate conveyance path; It carries in through 1 conveyance path, and after that, a predetermined process is performed after being moved to the 2nd substrate conveyance path from the said 1st board | substrate conveyance path by the said conveyance path changing means, and after completion | finish of a predetermined process, the said 2nd board | substrate A process carried in to the said one process chamber via a conveyance path is provided. Alternatively, in the other substrate processing step, the first substrate is loaded into the other processing chamber through a first substrate transport path, and is moved from the first substrate transport path to the second substrate transport path by the transport path changing means. After the predetermined process is performed, the process of moving from the second substrate conveyance path to the first substrate conveyance path by the conveyance path changing means after completion of the predetermined process, and the third substrate conveys the second substrate. And a step of carrying in a predetermined process by carrying in the other processing chamber through the furnace, and carrying it into the one processing chamber through the second substrate transfer path after completion of the predetermined processing. According to this method, the film can be formed without extending the tact time.

Moreover, in the other substrate processing method of this invention, a plurality of process chambers which perform predetermined | prescribed process with respect to a board | substrate are connected in series, and are connected to the 1st board | substrate conveyance path and the 1st board | substrate conveyance path formed between these process chambers. The second substrate conveyance path which is formed in parallel with each other, carries a predetermined process with respect to the board | substrate in each process chamber while conveying the said board | substrate is formed, and the board | substrate is provided in at least two process chambers among the said several process chambers. A foremost part of a substrate processing method for performing a predetermined process on a substrate in each processing chamber by using a vacuum processing apparatus in which a conveying path changing means for moving between a first substrate conveying path and a second substrate conveying path is formed. The board | substrate is carried in to the process chamber of the former part, the board | substrate is carried in to each process chamber through the 1st board | substrate conveyance path and the 2nd board | substrate conveyance path, and the predetermined process is performed in each process chamber. As a substrate processing method, a predetermined processing chamber moves between a first substrate conveying path and a second substrate conveying path by a conveying path changing means two or more times, and at the same time, the predetermined processing chamber performs a predetermined process two or more times. It characterized in that to perform. According to the substrate processing method of the present invention, the predetermined processing is performed in the same processing chamber by moving the first substrate transfer path and the second substrate transfer path two or more times by the transfer path changing means using the vacuum processing apparatus. We can carry out.

Since the vacuum processing apparatus of this invention has few process chambers, it is more compact. Moreover, since the conveyance path changing means is formed in two or more process chambers, and various film forming methods can be performed, it has the outstanding effect that it is excellent in functionality and excellent in mobility. Moreover, according to the substrate processing method using the vacuum processing apparatus of this invention, it has the outstanding effect that it can form into a film without extending tact time using a more compact apparatus.

1: is a schematic diagram which shows the structure of the vacuum processing apparatus 1 of this invention.
2 is a schematic cross-sectional view of a substrate formed by using the film formation method of the present invention.
It is a schematic diagram which shows the conveyance path | route of (a) timing chart and (b) board | substrate for demonstrating the film-forming method of this invention.
It is a schematic diagram for demonstrating the conveyance path | route of the board | substrate in the film-forming method of this invention.
Fig. 5 is a timing chart for explaining the film formation method of the present invention, and shows (a) the first film formation method, (b) the second film formation method, and (c) the third film formation method.
It is a schematic diagram which shows the conveyance path | route of (a) timing chart and (b) board | substrate for demonstrating the 2nd film-forming method of this invention.
It is a schematic diagram for demonstrating the conveyance path | route of the board | substrate in the 2nd film-forming method of this invention.
It is a schematic diagram which shows the conveyance path | route of (a) timing chart and (b) board | substrate for demonstrating the 3rd film-forming method of this invention.
Explanation of the sign
1: vacuum processing unit
2: substrate carrier
11: load lock room
12: heating room
13: first tabernacle
14: 2nd tabernacle
15: first return path
16: 2nd return path
17: means of reroute
S: Substrate

To practice the invention  Best form for

BRIEF DESCRIPTION OF THE DRAWINGS It is typical sectional drawing which shows the structure of the vertical vacuum processing apparatus of this invention. The vertical vacuum processing apparatus 1 is a vertical conveyance type vacuum processing apparatus which processes a board | substrate S, maintaining the board | substrate S substantially perpendicularly by the frame-shaped board | substrate carrier 2, and is a load lock room. (11), the heating chamber 12, the 1st film-forming chamber 13, and the 2nd film-forming chamber 14 are provided in this order. The gate valve 10 is formed between each chamber, and each chamber can process independently in vacuum.

In the vertical vacuum processing apparatus 1, the 1st conveyance path 15 and the 2nd conveyance path 16 which mutually convey a board | substrate are formed from the load lock chamber 11 to the 2nd film-forming chamber 14, respectively. It is. The 2nd conveyance path 16 is provided in the film-forming means 131 and 141 formed in the 1st film-forming chamber 13 and the 2nd film-forming chamber 14, respectively. Two rails are attached to the 1st conveyance path 15 and the 2nd conveyance path 16, respectively, and the board | substrate carrier 2 is comprised so that the rail top may move with the wheel provided in the board | substrate carrier bottom part. In this case, a rack is formed on the lower surface of the substrate carrier 2, and the rotational force of the motor is applied to the load lock chamber 11, the heating chamber 12, the first film forming chamber 13, and the second film forming chamber 14. Since the pinion gear which rotates by this is formed, this rack and pinion gear are meshed with each other, the driving force of a motor is transmitted to the board | substrate carrier 2, and the board | substrate carrier 2 is conveyed.

The load lock chamber 11 is comprised so that the vacuum pump which is not shown in figure may be formed, and the inside of the load lock chamber 11 may be evacuated until a predetermined vacuum degree is maintained, and the vacuum degree may be maintained.

The heating chamber 12 is provided with a vacuum pump (not shown), evacuates the inside of the heating chamber 12 to a predetermined degree of vacuum, and maintains the degree of vacuum. It is comprised so that the board | substrate on the 2nd conveyance path 16 or the 1st conveyance path 15 may be heated up to predetermined temperature.

In the first film forming chamber 13 and the second film forming chamber 14, a vacuum pump (not shown) is formed, and the inside of the first film forming chamber 13 and the second film forming chamber 14 reaches a predetermined degree of vacuum. It evacuates and it is comprised so that the vacuum degree can be maintained. The film forming means 131 is formed in the first film forming chamber 13, and the film forming means 141 is formed in the second film forming chamber 14. Known film forming means can be used as the film forming means. For example, when forming by the sputtering method, the target and the sputter gas introduction means are provided so that the film can be formed. Moreover, when forming into a film by CVD method, it is comprised so that film-forming gas introduction means may be provided and it can form into a film. The film formation by these film forming means 131 and 141 is the board | substrate S in the film-forming position 132 and 142 on the 2nd conveyance path 16, so that the board | substrate on the 1st conveyance path 15 may not be formed into a film. Consists of.

In addition, path changing means capable of moving the substrate carrier 2 between the first conveyance path 15 and the second conveyance path 16 in the first film formation chamber 13 and the second film formation chamber 14. (17) is formed. Although the path change means 17 is not shown in detail, it supports the board | substrate carrier 2 by the holding part formed in the outer frame of the board | substrate carrier 2, for example, and makes the board | substrate carrier 2 1st. It is comprised so that a conveyance path can be changed by carrying out parallel movement between the conveyance path 15 and the 2nd conveyance path 16. As shown in FIG.

In the vertical vacuum processing apparatus of this invention, the board | substrate S is conveyed on each 1st conveyance path 15 and the 2nd conveyance path 16 by the board | substrate carrier 2 comprised as mentioned above, and each thread It is possible to perform a predetermined process with respect to the board | substrate S inside. Moreover, in the 1st film-forming chamber, even if the board | substrate S is on the 1st conveyance path 15, the board | substrate S is moved to the 2nd conveyance path 16 by the path change means 17. As shown in FIG. Since the predetermined process can be performed, in the film forming method of performing the same film formation a plurality of times, the film forming chamber which performs the same film formation can be omitted. That is, in the conventional vacuum processing apparatus, since the path changing means is formed only in the last processing chamber, the substrate passes through the second conveying path from the load lock chamber at the foremost part to the second film forming chamber at the last part and a series of processing steps are performed. After this was completed, it was changed to the first conveyance path by the route changing means and moved on the first conveyance path. After the board | substrate was moved to the 1st conveyance path, it did not return to a 2nd conveyance path, Therefore, for example, it could not return to a 2nd conveyance path once again on the way, and it could not repeat the same film forming process. Therefore, the processing chamber was needed as many as the processing process of the film-forming method. However, in this case, since the path changing means 17 is also formed in the process chamber in the middle, even if there is the substrate S on the first conveying path 15, when the predetermined process is to be performed, the path changing means The board | substrate can be moved to the 2nd conveyance path 16 by (17), and a predetermined process can be performed. Therefore, since the same film | membrane can be formed by the number of process chambers smaller than the number of film-forming processes, the vacuum processing apparatus 1 of this invention has a more compact apparatus structure compared with the former.

The film-forming method using the vertical vacuum processing apparatus of this invention is demonstrated below.

If the vertical vacuum processing apparatus 1 of this invention is used, the 2nd conveyance path 16 image may be conveyed and carried in from the load lock chamber 11, and the 1st film-forming chamber 13 and the 2nd film-forming chamber 14 may be carried out. ), The film is moved from the second film forming room 14 to the first conveying path 15 by the path changing means 17, and the second film forming room 14, the first film forming room 13, and the heating are performed. By taking out the board | substrate through the chamber 12 and the load lock chamber 11, two layers of film | membrane can be formed on the board | substrate S. FIG.

Moreover, when the vertical vacuum processing apparatus 1 of this invention is used, the 3 layer film | membrane shown in FIG. 2 can also be formed. FIG. 2: is a cross-sectional schematic diagram of the board | substrate S after film-forming, On the board | substrate S, the 1st film | membrane 31, the 2nd film | membrane 32, and the 3rd film | membrane 33 are formed into a film in this order. The first film 31 and the third film 33 are the same film, and only the second film 32 is a different film. The second film 32 has a longer film forming time than the first film 31 and the third film 33. For example, in the figure, since the film thickness of the 2nd film | membrane 32 is thick compared with the 1st film | membrane 31 and the 3rd film | membrane 33, film-forming time is long. The method of forming such a three-layer film structure using the vacuum processing apparatus 1 is demonstrated in detail using FIG.

FIG. 3A is a timing chart when a three-layer film is formed using the vacuum processing apparatus 1 of the present invention, and FIG. 3B is a timing chart of the substrate S in the vacuum processing apparatus 1. It is a schematic diagram which shows a conveyance path. In the timing chart, the vertical axis represents the position of the substrate S1 and the horizontal axis represents time. In addition, it abbreviate | omits about the load lock chamber 11 here.

At t = 0, when the substrate S1 is loaded into the heating chamber 12 from the first conveying path 15 and heated to a predetermined temperature at t = t1, the first film forming chamber through the first conveying path 15. It is carried in to (13). Subsequently, between t = t2-t3, the board | substrate S1 is moved from the 1st conveyance path 15 to the 2nd conveyance path 16 by the path change means 17 in the 1st film-forming chamber 13, The first film 31 is formed between t = t3 and t4. Subsequently, the substrate S1 is carried into the second film formation chamber 14 at t = t4 to t5, and film formation of the second film 32 is started from t = t5. After completion of film formation at t = t6, the substrate S1 is moved to the first transport path 15 from the second transport path 16 by the path changing means 17 at t = t6 to t7. It is conveyed from the 2nd film-forming chamber 14 to the 1st film-forming chamber 13 via the conveyance path 15. FIG. In the first film formation chamber 13, the substrate S1 is moved from the first transport path 15 to the second transport path 16 by the path changing means 17 at t = t8 to t9, and t = The film formation of the third film 33 is started from t9. When the film formation ends at t = t10, the substrate S1 is carried out to the heating chamber 12 at t = t10 to t11. By this film formation method, on the substrate, the first film 31 is thicker than the first film 31 and the third film 33 at t = t5 to t6 between t = t3 and t4. ), A third film similar to the first film is formed at t = t9 to t10.

Thus, when the vertical vacuum processing apparatus 1 of this invention is used, when forming the 3rd film 33 similar to the 1st film | membrane 31, without forming the film-forming chamber for forming a 3rd film | membrane, Three layers of film can be formed on the substrate S in the same first film forming chamber 13. Therefore, in this vacuum processing apparatus 1, even when performing three-layer film-forming, it is not necessary to provide three film-forming chambers, and since it is necessary to provide two film-forming chambers, it can manufacture with compactness and low cost.

In the above, only one board | substrate S1 was demonstrated and demonstrated, but the 1st film-forming method of this invention is demonstrated in detail including the movement of another board | substrate using FIG. 4 and FIG. 5 (a).

4 shows the heating chamber 12, the first film forming chamber 13, and the substrates S1 to S5 in the second film forming chamber 14 for explaining the film forming method using the vertical vacuum processing apparatus of the present invention. It is a schematic diagram which shows a conveyance path by time (1)-(11). In addition, after FIG.4 (1), it abbreviate | omits except the code | symbol which shows the board | substrate and the code | symbol which shows a process chamber. 5 (a) is a timing chart showing a conveyance state of the substrates S1 to S5 in correspondence with FIG. 4, and (1) to (11) at points corresponding to FIGS. 4 (1) to 4 (11). ). Hereinafter, it demonstrates centering on FIG.

In FIG. 4 (1), specifically, in the substrate S3, the first film 31 is already formed in the first film forming chamber 13, and the second film forming chamber in the second conveying path 16 is formed. It is a state provided in the film-forming position 142 of 14, and the 2nd film | membrane 32 is formed into a film. As for the board | substrate S2, the 1st film | membrane 31 is already formed into a film in the 1st film-forming chamber 13, and the 2nd film | membrane 32 is formed into a film in the 2nd film-forming chamber 14, and a 2nd conveyance path | route is thereafter. It is in the state in which it is provided in the film-forming position 132 of the 1st film-forming room 13 in 16, and the 3rd film 33 is formed into a film. The board | substrate S1 is conveyed from the load lock chamber 11 to the heating chamber 12 via the 1st conveyance path, and is heated and hold | maintained to the predetermined temperature in the heating chamber 12. As shown in FIG.

When heating of the board | substrate S1 and film-forming of the 3rd film 33 with respect to the board | substrate S2 are complete | finished, the gate valve between the heating chamber 12 and the 1st film-forming chamber 13 will open, and the board | substrate S2 ) Is carried into the heating chamber 12, and the substrate S1 is carried into the first film forming chamber 13 (see FIG. 4 (2)).

Subsequently, since the board | substrate S2 was formed into the 1st film | membrane 31-the 3rd film | membrane 33, it is carried out as it is from the heating chamber 12 to the load lock chamber 11 as it is. The board | substrate S1 is moved to the 2nd conveyance path 16 from the 1st conveyance path 15 by the path change means 17, and is installed in the film-forming position 132. FIG. The film formation of the first film 31 is started for the substrate S1 provided at the film formation position 132 (see Fig. 4 (3)).

During the film formation of the substrate S1, when the film formation on the substrate S3 during the film formation of the second film 32 is completed from the viewpoint of FIG. 4 (1), the substrate S3 is transferred to the path changing means 17. Thereby, it moves to the 1st conveyance path 15 from the film-forming position 142 in the 2nd conveyance path 16 (refer FIG. 4 (4)).

When film-forming of the board | substrate S1 is complete | finished, the gate valve between the 2nd film-forming chamber 14 and the 1st film-forming chamber 13 will open, and the board | substrate S3 will make 1st film-forming through the 1st conveyance path 15. FIG. It carries in to the chamber 13, and the board | substrate S1 is carried in to the 2nd film-forming chamber 14 via the 2nd conveyance path 16 (refer FIG. 4 (5)).

Then, the board | substrate S1 is provided in the film-forming position 142 of the 2nd film-forming chamber 14, and film-forming is started. The board | substrate S3 is moved to the 2nd conveyance path 16 from the 1st conveyance path 15 by the path change means 17, is installed in the film-forming position 132, and 1st film-forming is carried out to the board | substrate S3. The deposition of the third film 33 is started in the chamber 13. During film formation of the third film 33 on the substrate S3, the substrate S4 is conveyed from the load lock chamber 11 to the heating chamber 12 via the first transport path 15 (FIG. 4 ( 6)).

When heating of the board | substrate S4 and film-forming of the 3rd film 33 with respect to the board | substrate S3 are complete | finished, the gate valve between the heating chamber 12 and the 1st film-forming chamber 13 will open, and the board | substrate S3 will be opened. ) Is carried out to the heating chamber 12 through the second conveyance path 16, and the board | substrate S4 is carried in to the 1st film-forming chamber 13 via the 1st conveyance path (refer FIG. 4 (7)). .

Since the board | substrate S3 was formed into the 1st film | membrane 31-the 3rd film | membrane 33, it is carried out as it is from the heating chamber 12 to the load lock chamber 11 as it is. The board | substrate S4 is moved to the 2nd conveyance path 16 from the 1st conveyance path 15 by the path change means 17, and is installed in the film-forming position 132, and is the 1st with respect to the board | substrate S4. Film formation of the film 31 is started. When the film-forming of the 2nd film | membrane 32 with respect to the board | substrate S1 is complete | finished, the board | substrate S1 will be the 1st from the film-forming position 142 in the 2nd conveyance path 16 by the path change means 17. FIG. It moves to the conveyance path 15 (refer FIG. 4 (8)).

Then, when film-forming with respect to the board | substrate S4 is complete | finished, the gate valve between the 2nd film-forming chamber 14 and the 1st film-forming chamber 13 will open, and the board | substrate S4 will open the 2nd conveyance path 16. FIG. It carries in to the 2nd film-forming chamber 14 via the board | substrate, and also the board | substrate S1 is carried in to the 1st film-forming chamber 13 via the 1st conveyance path 15 (refer FIG. 4 (9)).

The board | substrate S1 is moved to the 2nd conveyance path 16 from the 1st conveyance path 15 in the 1st film-forming chamber 13 by the path change means 17, and is installed in the film-forming position 132, Film formation of the third film 33 is started. The board | substrate S4 is provided in the film-forming position 142 of the 2nd film-forming chamber 14, and film-forming is started. During film formation of the third film 33 with respect to the substrate S1, the substrate S5 is conveyed from the load lock chamber 11 to the heating chamber 12 via the first transport path 15 (FIG. 4 (FIG. 4 ()). 10)).

Finally, when heating of the board | substrate S5 and film-forming of the 3rd film 33 with respect to the board | substrate S1 are complete | finished, the gate valve between the heating chamber 12 and the 1st film-forming chamber 13 will open, The board | substrate S1 is carried out to the heating chamber 12 via the 2nd conveyance path 16, and the board | substrate S5 is carried in to the 1st film-forming chamber 13 via the 1st conveyance path 15. As shown in FIG. The board | substrate S5 is moved to the 2nd conveyance path 16 from the 1st conveyance path 15 by the path change means 17 (refer FIG. 4 (11)). Since the board | substrate S1 was formed into the 1st film | membrane 31-the 3rd film | membrane 33 after that, it is carried out to the load lock chamber 11 from the heating chamber 12 as it is. Note that not only the substrates S1 to S3 but also the substrates S4 and S5 are formed in three layers similarly to the substrates S1 to S3.

As described above, the vertical vacuum processing apparatus of the present invention can change the substrate conveying path by the path changing means 17, and thus the second film forming chamber 14 is provided with respect to the substrates S1 to S5 while being a vertical conveying apparatus. The first film 31 and the third film 33 can be formed on another substrate in the first film formation chamber while the second film 32 is formed on the substrate. Therefore, the film | membrane of a three-layer structure can be formed into a film using the processing apparatus which consists of two film-forming chambers without extending tact time.

Hereinafter, the 2nd film-forming method using the vertical vacuum processing apparatus of this invention is demonstrated using FIG.

Although the conveyance path | route of the board | substrate S differs from the said 1st film-forming method in the 2nd film-forming method, it is possible to form the film | membrane shown in FIG. 2 similarly. 6 (a) is a timing chart in the case of forming three layers of films using the apparatus of the present invention, and FIG. 6 (b) is a schematic diagram showing a conveyance path of a substrate. In the timing chart, the vertical axis represents the position of the substrate S, and the horizontal axis represents time. In addition, the load lock chamber 11 is abbreviate | omitted here.

At t = 0, when the board | substrate S1 is carried in to the heating chamber 12 from the 2nd conveyance path 16, and it heats to predetermined temperature, the board | substrate S1 will be the 2nd conveyance path 16 at t = t1-t2. Is carried into the first deposition chamber 13 through). Subsequently, the first film 31 is formed in the first film formation chamber 13 in the substrate S1 from t = t2. After completion of film formation at t = t3, the substrate S1 is conveyed from the first film formation chamber 13 to the second film formation chamber 14 at t = t3 to t4, and from t = t4 to the second film 32. Film formation is started. After completion of film formation at t = t5, the substrate S1 moves from the second conveyance path 16 to the first conveyance path 15 by the path changing means 17 at t = t5 to t6, and then the second substrate S1. It is conveyed from the film-forming chamber 14 to the 1st film-forming chamber 13. Subsequently, the substrate S1 is moved from the first conveyance path 15 to the second conveyance path 16 by the path changing means 17 in the first film formation chamber 13 at t = t7 to t8. The film formation of the third film 33 is started from = t8. When film formation is completed at t = t9, the substrate is moved at t = t10 to t11 after being moved from the second conveyance path 16 to the first conveyance path 15 by the path changing means 17 at t = t9 to t10. S1 is carried out to the heating chamber 12.

By the film formation method, on the substrate, the first film 31 at t = t2 to t3 and the second film 32 thicker than the first film and the third film at t = t4 to t5 are t = t8 to At t9, the same third film 33 as the first film is formed.

The method of forming this film will be described in detail including the movement of other substrates using Figs. 7 and 5 (b).

FIG. 7 shows the substrates S1 to S5 in the heating chamber 12, the first film forming chamber 13, and the second film forming chamber 14 for explaining the film forming method using the vertical vacuum processing apparatus of the present invention. It is a schematic diagram which shows a conveyance path by time (1)-(11). In addition, after FIG.7 (1), it abbreviate | omits except the code | symbol which shows the board | substrate and the code | symbol which shows a process chamber. 5 (b) is a timing chart showing the conveyance and film formation states of the substrates S1 to S5 in response to FIG. 7, and at points corresponding to FIGS. 7 (1) to 7 (11) to (1) to FIG. (11) was given. Hereinafter, it demonstrates centering on FIG.

In FIG. 7 (1), the substrate S3 is formed of the second film forming chamber 14 in the second conveying path 16 after the first film 31 has already been formed in the first film forming chamber 13. It is installed in the film-forming position 142, and the 2nd film | membrane 32 is being formed into a film. As for the board | substrate S2, the 1st film | membrane 31 is formed into a film in the 1st film-forming chamber 13 already, and the 2nd film | membrane 32 is formed into a film in the 2nd film-forming chamber 14, and the 1st film-forming chamber is after that. In 13, the 3rd film | membrane 33 is formed and it is the state which is moved to the 1st conveyance path from the 2nd conveyance path 16 by the route change means 17. As shown in FIG. The board | substrate S1 is conveyed to the heating chamber 12 from the load lock chamber 11 via the 2nd conveyance path 16, and is heated and hold | maintained to the predetermined temperature in the heating chamber 12. As shown in FIG.

When heating of the board | substrate S1 and the movement of the board | substrate S2 are complete | finished, the gate valve between the heating chamber 12 and the 1st film-forming chamber 13 will open, and the board | substrate S2 will be the 1st conveyance path 15 ) Is carried out to the heating chamber 12, and the board | substrate S1 is carried in to the 1st film-forming chamber 13 via the 2nd conveyance path 16 (refer FIG. 7 (2)).

Subsequently, the substrate S1 is provided at the film formation position 132, and the film formation of the first film 31 is started. Since the board | substrate S2 was formed into the 1st film | membrane 31-the 3rd film | membrane 33, it is carried out from the heating chamber 12 to the load lock chamber 11 as it is. When the film formation with respect to the board | substrate S3 which was in the film-forming of the 2nd film | membrane 32 was completed from the time of FIG. 7 (1), during film-forming of the board | substrate S1, the board | substrate S3 will be made to the path change means 17. FIG. Thereby, it moves to the 1st conveyance path 15 from the film-forming position 142 in the 2nd conveyance path 16 (refer FIG. 7 (3)).

When film-forming of the board | substrate S1 is complete | finished, the gate valve between the 2nd film-forming chamber 14 and the 1st film-forming chamber 13 will open, and the board | substrate S3 will make 1st film-forming through the 1st conveyance path 15. FIG. It carries in to the chamber 13, and the board | substrate S1 is carried in to the 2nd film-forming chamber 14 via the 2nd conveyance path 16 (refer FIG. 7 (4)).

Then, the board | substrate S1 is provided in the film-forming position 142 of the 2nd film-forming chamber 14, and film-forming is started. The board | substrate S3 is moved to the 2nd conveyance path 16 from the 1st conveyance path 15 by the path change means 17, is installed in the film-forming position 132, and the film-forming of the 3rd film 33 is formed. This is disclosed. During film formation of the second film 32 with respect to the substrate S1, the substrate S4 is conveyed from the load lock chamber 11 to the heating chamber 12 via the second conveyance path 16 (FIG. 7 ( 5)).

When film-forming of the 3rd film 33 with respect to the board | substrate S3 is complete | finished, the board | substrate S3 moves to the 1st conveyance path 15 from the 2nd conveyance path 16 by the path change means 17. As shown in FIG. (See FIG. 7 (6)).

When the path change of the board | substrate S3 and the heating of the board | substrate S4 are complete | finished, the gate valve between the heating chamber 12 and the 1st film-forming chamber 13 will open, and the board | substrate S3 will be the 1st conveyance path 15 ) Is carried out to the heating chamber 12 via the), and the substrate S4 is carried into the first film forming chamber 13 via the second conveyance path to start film formation. Moreover, when film-forming of the 2nd film | membrane 32 with respect to the board | substrate S1 is complete | finished, the board | substrate S1 will be the 1st conveyance path 15 from the 2nd conveyance path 16 by the path change means 17. FIG. (See FIG. 7 (7)).

Since the board | substrate S3 was formed into the 1st film | membrane 31-the 3rd film | membrane 33, it is carried out from the heating chamber 12 to the load lock chamber 11 via the 1st conveyance path 15. As shown in FIG. When the film formation of the first film 31 on the substrate S4 is finished, the gate valve between the second film formation chamber 14 and the first film formation chamber 13 is opened, and the substrate S4 is moved to the second conveyance path. It carries in to the 2nd film forming room 14 via 16, and film-forming is started in the film-forming position 142. FIG. In addition, the board | substrate S1 is carried in to the 1st film-forming chamber 13 via the 1st conveyance path 15 (refer FIG. 7 (8)).

The board | substrate S1 is moved to the 2nd conveyance path 16 from the 1st conveyance path 15 in the 1st film-forming chamber 13 by the path change means 17, and is installed in the film-forming position 132, Film formation of the third film 33 is started. During film formation of the second film 32 with respect to the substrate S4, the substrate S5 is conveyed from the load lock chamber 11 to the heating chamber 12 via the second conveying path 16, and heating is started. (See FIG. 7 (9)).

When the film formation of the third film 33 with respect to the substrate S1 is finished, the substrate S1 is moved from the second transport path 16 in the first film formation chamber 13 by the path changing means 17. It moves to the conveyance path 15 (refer FIG. 7 (10)).

Finally, when heating of the board | substrate S5 and the movement of the board | substrate S1 are complete | finished, the gate valve between the heating chamber 12 and the 1st film-forming chamber 13 will open, and the board | substrate S1 will convey 1st It is carried out to the heating chamber 12 via the furnace 15, and the board | substrate S5 is carried in to the 1st film-forming chamber 13 via the 2nd conveyance path 16. The board | substrate S4 is moved to the 1st conveyance path 15 from the 2nd conveyance path 16 by the path change means 17 (refer FIG. 7 (11)). Since the board | substrate S1 was formed into the 1st film | membrane 31-the 3rd film | membrane 33 after that, it is carried out from the heating chamber 12 to the load lock chamber 11. Note that not only the substrates S1 to S3 but also the substrates S4 and S5 are formed in three layers similarly to the substrates S1 to S3.

As described above, the vertical vacuum processing apparatus of the present invention can change the substrate conveying path by the path changing means 17, so that the film forming time is increased on the substrate in the second film forming chamber 14 while being the vertical conveying apparatus. While the long second film 32 is being formed, the first film 31 and the third film 33 can be formed on another substrate in the first film formation chamber. Therefore, the tact time does not extend, and the film | membrane of a three-layer structure can be formed into a film using the processing apparatus which consists of two film-forming chambers.

And as a 3rd film-forming method, in the 2nd film-forming method, although the board | substrate was carried in from the 2nd conveyance path 16 and formed into a film, the process shown in FIG. It is possible to perform three-layer film formation using the apparatus. This point is explained using FIG.

FIG. 8A is a timing chart when a three-layer film is formed using the apparatus of the present invention, and FIG. 8B is a schematic diagram showing a conveyance path of a substrate. In the timing chart, the vertical axis represents the position of the substrate S, and the horizontal axis represents time. In addition, the load lock chamber 11 is abbreviate | omitted here.

When t = 0 is carried in the heating chamber 12 from the 1st conveyance path 15 to the heating chamber 12, and when it heats to predetermined | prescribed temperature, it will be 1st through the 1st conveyance path 15 at t = t1-t2. It carries in to the film-forming room 13. Subsequently, the substrate S1 is moved from the first conveyance path 15 to the second conveyance path 16 by the path changing means 17 in the first film formation chamber 13 at t = t2 to t3. The film formation of the first film 31 is started from = t3. When the film formation ends at t = t4, the substrate S1 is moved from the second conveyance path 16 to the first conveyance path 15 by the path changing means 17. After completion | finish of movement, the board | substrate S1 is conveyed from the 1st film-forming chamber 13 to the 2nd film-forming chamber 14 at t = t5-t6, and is made by the path changing means 17 at t = t6-t7. It moves from the 1st conveyance path 15 to the 2nd conveyance path 16, and film-forming of the 2nd film | membrane 32 starts from t = t7. After completion of film formation at t = t8, the substrate S1 is conveyed from the second film formation chamber 14 to the first film formation chamber 13 at t = t8 to t9. Subsequently, the film formation of the third film 33 is started with respect to the substrate S1 in the first film formation chamber 13 at t = t9. When film-forming is complete at t = 10, the board | substrate S1 is carried out to the heating chamber 12 via the 2nd conveyance path 16 at t = t10-t11.

By this film formation method, on the substrate, the first film 31 at t = t3 to t4 and the second film 32 thicker than the first film and the third film at t = t7 to t8 are t = t9 to At t10, the same third film 33 as the first film is formed.

In addition, although the figure which shows the conveyance path | route of another board | substrate is abbreviate | omitted in FIG. 8, also in this case, as shown to FIG. 5 (c), also shown in the 1st film-forming method shown to FIG. 5 (a) and FIG. 5 (b). It is possible to perform film formation in the same tact time as the second film formation method.

That is, in each film formation method of the present invention, the path changing means 17 is also formed in the first film formation chamber 13, so that the substrate S on the first transport path 15 is also the second transport path 16. Since the film can be moved to, the film can be formed twice in the first film forming room 13. In this case, since the film formation time of the second film 32 is long, the first film 31 and the third film 33 can be formed during the film formation of the second film 32, which is unnecessary in the film forming process. Less time

Moreover, in the vacuum processing apparatus 1 of this invention, although the heating means was formed in the heating chamber 12, the 1st conveyance path 15 and the 2nd conveyance path ( 16) You may provide a heating means between and.

Moreover, in the said embodiment, although the path change means 17 was formed in the 1st film-forming chamber 13 and the 2nd film-forming chamber 14 of the vacuum processing apparatus 1, the process similar to the last process chamber and a film-forming process is performed. What is necessary is just to provide the route change means 17 in the process chamber which performs 2 times, respectively. For example, even when the film forming process is not performed, when performing the film forming method having two plasma exposure steps, a plasma generating chamber is formed in the vacuum processing apparatus 1, and the path changing means is provided in the plasma generating chamber. What is necessary is just to form (17).

In each of the film forming methods of the present invention described above, the timing of loading and unloading of the substrate may be changed depending on the device configuration such as the film forming method and the type of film.

In the case where only one layer is to be formed selectively on the substrate, the substrate S is transferred from the load lock chamber 11 to the second conveyance path 16, and the film formation is performed only in the first deposition chamber 13. The board | substrate S is moved to the 1st conveyance path 15 from the 2nd conveyance path by the path change means 17, and the 1st film-forming chamber 13, the heating chamber 12, and the load lock chamber ( It is also possible to form one layer of film on the substrate S by passing the substrate S through 11). Therefore, according to the vertical vacuum processing apparatus 1 of this invention, operation | movement of an apparatus can be changed with a film-forming process. Moreover, when two 2nd film-forming chambers are formed, even if the 2nd film-forming chamber of a stage is in maintenance, film-forming is performed in the 2nd film-forming chamber by the side of 1st film-forming chamber 13, and the path | route of this film-forming chamber is carried out. Operation can be continued by moving the board | substrate S from the 2nd conveyance path to the 1st conveyance path 15 by the change means 17. FIG.

Example 1

In the present Example, it formed into a board | substrate by the film-forming method similar to FIG. 5 in the vertical vacuum processing apparatus 1 shown in FIG. As the film forming means 131, the Mo target was formed to face the substrate provided at the film forming position 132, and Ar gas was introduced into the first film forming chamber as a sputtering gas. As the film forming means 141, the Al target was formed to face the substrate provided at the film forming position 142, and Ar gas was introduced into the second film forming chamber as a sputtering gas. As the substrate, a glass substrate of 2200 mm x 2400 mm x t0.7 mm was used.

First, the board | substrate S1 is carried in to the heating chamber 12 from the 1st conveyance path 15, and after heating to predetermined temperature (about 100 degreeC), the board | substrate S1 is opened to the 1st conveyance path 15. FIG. It carried in to the 1st film forming room 13 through. Subsequently, after moving the board | substrate S1 from the 1st conveyance path 15 to the 2nd conveyance path 16 by the path change means 17 in the 1st film-forming chamber 13, sputter gas is introduce | transduced and Mo Deposition of the film was started. After about 10 seconds had elapsed, the film formation was completed, and the first film forming chamber was evacuated. Subsequently, the board | substrate S1 was carried in to the 2nd film-forming chamber 14, the sputter gas was introduce | transduced, and film-forming of Al film was started. After about 50 seconds had elapsed and the Al film was finished, the second film forming room was moved from the second conveyance path 16 to the first conveyance path 15 by the path changing means 17. (14) Internal exhaust was performed. Next, the substrate S1 was conveyed from the second film formation chamber 14 to the first film formation chamber 13. In the first film formation chamber 13, the substrate S1 is moved from the first transport path 15 to the second transport path 16 by the path changing means 17, sputter gas is introduced to form the Mo film again. Started. After about 10 seconds had elapsed, the film formation was completed, and after exhausting, the substrate S1 was carried out to the heating chamber 12. By this film formation method, an Mo film as the first film 31, an Al film as the second film 32, and an Mo film as the third film 33 were formed on the substrate. The thickness of each film was about 50 nm, about 300 nm, and about 50 nm, respectively. Moreover, also about another board | substrate, the film | membrane of a three layer structure could be formed into a film, respectively.

Example 2

In the present Example, it formed similarly to Example 1 except having mixed N ₂ gas in the 1st film-forming chamber as an appropriate amount of Ar gas as a sputter gas. On the substrate, a Mo nitride film as the first film 31, an Al film as the second film 32, and a Mo nitride film as the third film were formed. The thickness of each film was about 50 nm, about 300 nm, and about 50 nm, respectively. In this case, since the substrate could be moved at the time of sputtering pressure adjustment performed before film-forming, the tact time was the same in film-forming.

Industrial availability

According to the vertical vacuum processing apparatus of the present invention, even a large substrate can be processed, and thus it can be used in the field of display manufacturing.

Claims (7)

A vacuum processing apparatus in which a plurality of processing chambers that perform predetermined processing on a substrate are connected in series,
In the vacuum processing apparatus, a first substrate conveying path formed between the plurality of processing chambers of the vacuum processing apparatus and the first substrate conveying path are formed in parallel, and the substrate is conveyed and predetermined in each processing chamber. The 2nd board | substrate conveyance path in which the process of the process is performed with respect to the said board | substrate is formed, and the said board | substrate is moved between the said 1st board | substrate conveyance path and the said 2nd board | substrate conveyance path in at least two process chambers among the said several process chambers. The conveying path change means for making it carry out is provided, The vacuum processing apparatus characterized by the above-mentioned. The method of claim 1,
The conveyance path changing means was formed in the processing chamber of the last part connected in series among the said processing chambers, and at least 1 process chamber other than the processing chamber of the last part, The vacuum processing apparatus characterized by the above-mentioned. The method according to claim 1 or 2,
The vacuum processing apparatus includes a load lock chamber, a heating chamber, a first film forming chamber, and a second film forming chamber, and the conveying path changing means is formed in the first film forming chamber and the second film forming chamber, The said 1st film-forming process chamber and the said 2nd film-forming process chamber are comprised so that mutually different films may be formed, The vacuum processing apparatus characterized by the above-mentioned. A plurality of processing chambers that perform predetermined processing on the substrate are connected in series, and are formed in parallel to the first substrate conveying path and the first substrate conveying path formed between the plurality of processing chambers, and the substrate is conveyed. In addition, a second substrate transfer path is formed in which a predetermined process is performed on the substrate in each processing chamber, and at least two processing chambers among the plurality of processing chambers are provided with the first substrate transfer path and the substrate. As a substrate processing method which performs predetermined process with respect to the said board | substrate in each processing chamber using the vacuum processing apparatus in which the conveyance path change means for moving between 2nd board | substrate conveyance paths is provided,
In a first processing chamber, a first substrate processing step of performing a predetermined process on a first substrate; in the first processing chamber, a second substrate processing step of performing a predetermined processing on a second substrate; Another substrate processing step of performing a predetermined process on the first substrate and the third substrate on which the predetermined process is performed in the first substrate processing step,
In the said one processing chamber, it has the 3rd board | substrate processing process of performing a predetermined process with respect to the said 3rd board | substrate with which the predetermined process was performed in the said other substrate processing process,
The other substrate processing step is performed during the second substrate processing step,
Moreover, in the said other substrate processing process, at least 1 of the said 1st board | substrate and the said 3rd board | substrate carried in the said other process chamber by the conveyance path changing means formed in the said other process chamber is made into the said 1st board | substrate conveyance path and the said 1st It moves between two board | substrate conveyance paths, The substrate processing method characterized by the above-mentioned. The method of claim 4, wherein
The said other board | substrate processing process is carried in the said 1st board | substrate to the said other process chamber via the said 1st board | substrate conveyance path, and is then moved from the said 1st board | substrate conveyance path to the said 2nd board | substrate conveyance path by the said conveyance path changing means. The predetermined process is performed after being moved, and the process of carrying out from the said other process chamber through the said 2nd board | substrate conveyance path after completion | finish of a predetermined process, and the said 3rd board | substrate are carried in the said other process chamber through the said 1st conveyance path, Thereafter, a predetermined process is performed after being moved from the first substrate conveying path to the second substrate conveying path by the conveying path changing means, and after the end of the predetermined process, the one substrate is transferred through the second substrate conveying path. A substrate processing method comprising the steps carried into the processing chamber. The method of claim 4, wherein
The said other substrate processing process is carried in the said 1st board | substrate to the said other process chamber via the said 1st board | substrate conveyance path, and is moved to the said 2nd board | substrate conveyance path by the said conveyance path changing means, Then, a predetermined process is carried out, and after the predetermined process is finished, a step of moving from the second substrate conveying path to the first substrate conveying path by the conveying path changing means, and the third substrate is the second substrate conveying path. And a step of carrying in a predetermined process to be carried into the other processing chamber through the second processing chamber, and carrying it into the one processing chamber through the second substrate transfer path after completion of a predetermined processing. A plurality of processing chambers that perform predetermined processing on the substrate are connected in series, and are formed in parallel to the first substrate conveying path and the first substrate conveying path formed between the plurality of processing chambers, and the substrate is conveyed. In addition, a second substrate transfer path is formed in which a predetermined process is performed on the substrate in each processing chamber, and at least two processing chambers among the plurality of processing chambers are provided with the first substrate transfer path and the substrate. As a substrate processing method which performs predetermined process with respect to the said board | substrate in each processing chamber using the vacuum processing apparatus in which the conveyance path change means for moving between 2nd board | substrate conveyance paths is provided,
In the predetermined processing chamber, while moving between the said 1st board | substrate conveyance path and the said 2nd board | substrate conveyance path by the said conveyance path changing means twice or more, and performing predetermined process twice or more in this predetermined process chamber. The substrate processing method characterized by the above-mentioned.

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