KR102014172B1 - Uv light emitting device and light emitting device package - Google Patents

Abstract

Embodiments relate to an ultraviolet light emitting device and an ultraviolet light emitting device package.
Ultraviolet light emitting device according to the embodiment, the package body; A light emitting element disposed in the package body; A first electrode layer and a second electrode layer disposed on the package body and electrically connected to the light emitting device; And a filler filling the light emitting device, wherein the light emitting device is an ultraviolet light emitting device that has an active layer disposed between a first conductive semiconductor layer and a second conductive semiconductor layer, and emits ultraviolet rays. The first conductivity type semiconductor layer includes a first conductive layer, a first superlattice layer, a second conductive layer, and a second superlattice layer, and the first superlattice layer includes a plurality of InGaN, GaN, and AlGan layers. Is a superlattice structure, and the second superlattice layer is a superlattice structure in which n-GaN layer / InGaN layer / GaN layer / InGan layer is repeated a plurality of times, and the ultraviolet light emitting element is under the first conductivity type semiconductor layer. A buffer layer disposed on the substrate, the buffer layer including a crack blocking layer, wherein the buffer layer comprises: a first buffer layer stacked on a substrate; And a second buffer layer stacked on the first buffer layer, wherein the first buffer layer is a low temperature buffer layer, the low temperature buffer layer is formed of LT-GaN, has a thickness of 250 μs, and the second buffer layer is n A doped or p-type dopant is formed of undoped u-GaN, is formed to a thickness of 15,000 kPa, the crack blocking layer is disposed in the second buffer layer, and an aluminum gallium nitride layer; A gallium nitride layer disposed on the aluminum gallium nitride layer; And an indium gallium nitride layer disposed on the gallium nitride layer.

Description

UV light emitting device and light emitting device package {UV LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE}

Embodiments relate to an ultraviolet light emitting device and a light emitting device package.

In general, Group III nitrides such as gallium nitride (GaN), aluminum nitride (AlN), and indium gallium nitride (InGaN) have excellent thermal stability, and have a direct transition energy band structure. Mainly used. Specifically, group III nitrides are widely used in blue light emitting diodes (Blue LEDs) and ultraviolet light emitting diodes (UV LEDs).

The ultraviolet light emitting diode has a problem that the light emitting efficiency and the light output are significantly inferior to the blue light emitting diode. This acts as a large barrier to the practical use of ultraviolet light emitting diodes.

Near UV light emitting diodes (Near UV LED) are used for gastric sensitization, resin curing, and ultraviolet light treatment. In addition, near-ultraviolet light-emitting diodes are also used in lighting devices that combine visible phosphors to produce visible light of various colors.

The embodiment provides an ultraviolet light emitting device and a light emitting device package capable of preventing a shortage of holes at a high current.

In addition, the embodiment provides an ultraviolet light emitting device and a light emitting device package that can block cracks.

The ultraviolet light emitting device according to the embodiment has an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and emits ultraviolet rays. The ultraviolet light emitting device is disposed between the second conductivity type semiconductor layer and the active layer. An electron blocking layer disposed on the; And a p-type gallium nitride layer disposed between the electron blocking layer and the active layer.

The ultraviolet light emitting device according to the embodiment has an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and emits ultraviolet light, and is disposed under the first conductive semiconductor layer. A buffer layer is further included, and the buffer layer includes a crack blocking layer.

Ultraviolet light emitting device package according to the embodiment, the package body; A light emitting element disposed in the package body; A first electrode layer and a second electrode layer disposed on the package body and electrically connected to the light emitting device; And a filler filling the light emitting device, wherein the light emitting device is an ultraviolet light emitting device that has an active layer disposed between a first conductive semiconductor layer and a second conductive semiconductor layer, and emits ultraviolet rays. The light emitting device includes: an electron blocking layer disposed between the second conductivity type semiconductor layer and the active layer; And a p-type gallium nitride layer disposed between the electron blocking layer and the active layer.

Ultraviolet light emitting device package according to the embodiment, the package body; A light emitting element disposed in the package body; A first electrode layer and a second electrode layer disposed on the package body and electrically connected to the light emitting device; And a filler filling the light emitting device, wherein the light emitting device is an ultraviolet light emitting device that has an active layer disposed between a first conductive semiconductor layer and a second conductive semiconductor layer, and emits ultraviolet rays. The light emitting device further includes a buffer layer disposed under the first conductivity type semiconductor layer, and the buffer layer includes a crack blocking layer.

By using the ultraviolet light emitting device and the light emitting device package according to the embodiment, it is possible to prevent the lack of holes at high current.

It is also possible to block cracks.

1 is a view showing an ultraviolet light emitting device according to the embodiment.
FIG. 2 is a view showing a modified example of the first conductive semiconductor layer shown in FIG. 1.
3 is a view showing an ultraviolet light emitting device according to another embodiment.
4 is a view showing the ultraviolet light emitting device shown in FIG. 1 applied to a horizontal light emitting device.
FIG. 5 is a view showing the ultraviolet light emitting device shown in FIG. 1 applied to a vertical light emitting device. FIG.
6 is a cross-sectional view of a light emitting device package according to the embodiment.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

In the description of the embodiment according to the present invention, when one element is described as being formed on the "on or under" of another element, (On or under) includes both the two elements are in direct contact with each other (directly) or one or more other elements are formed indirectly formed (indirectly) between the two elements. In addition, when expressed as “on” or “under”, it may include the meaning of the downward direction as well as the upward direction based on one element.

Hereinafter, an ultraviolet light emitting device and a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

1 is a view showing an ultraviolet light emitting device according to the embodiment.

The ultraviolet light emitting device illustrated in FIG. 1 may emit light in an ultraviolet region. As an example, the ultraviolet light emitting device illustrated in FIG. 1 may emit ultraviolet light having a wavelength within a range of 360 nm to 400 nm.

Referring to FIG. 1, the ultraviolet light emitting device according to the embodiment may include a substrate 100, a buffer layer 200, a first conductivity type semiconductor layer 300, an active layer 400, and a second conductivity type. The semiconductor layer 500, an electron blocking layer (EBL, 600), and a p-type gallium nitride (p-GaN) layer 700 may be included.

The buffer layer 200, the first conductive semiconductor layer 300, the active layer 400, the second conductive semiconductor layer 500, the electron blocking layer 600, and the p-type gallium nitride layer 700 may be formed by chemical vapor deposition ( CVD), molecular beam epitaxy (MBE), sputtering, hydroxide vapor phase epitaxy (HVPE), or the like.

The substrate 100 may be formed of an insulating substrate such as sapphire (Al ₂ O ₃ ), spinel (MgAl ₂ O ₄ ) mainly having a C surface, an R surface, or an A surface, SiC (including 6H, 4H, and 3C), At least one of semiconductor substrates such as Si, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. Here, the substrate 100 is not limited to the materials described above, but the first conductive semiconductor layer 300, the active layer 400, the second conductive semiconductor layer 500, the electron blocking layer 600, and the p-type. It is to be understood that the substrate includes any substrate capable of sequentially growing the gallium nitride layer 700.

The buffer layer 200 is disposed between the substrate 100 and the first conductivity type semiconductor layer 300. The buffer layer 200 may mitigate dislocations, cracks, or warps that may be caused by heterojunction between the substrate 100 and the first conductivity-type semiconductor layer 300. .

The buffer layer 200 may be a nitride semiconductor including Ga _d Al _{1 -d} N (d is 0 <d ≦ 1). The smaller the ratio of aluminum (Al), the more remarkably the crystallinity is. Therefore, the use of GaN as the material for the buffer layer 200 is most preferred.

The thickness of the buffer layer 200 may be in a range of 0.002 to 0.5 μm, preferably 0.005 to 0.2 μm, more preferably 0.01 to 0.02 μm. If the thickness of the buffer layer 200 is in the above range, the crystal morphology of the nitride semiconductor may be improved, and the crystallinity of the first conductive semiconductor layer 300 grown on the buffer layer 200 may be improved. .

The growth temperature of the buffer layer 200 is 200 to 900 ° C, preferably 400 to 800 ° C. If the growth temperature is within the above range, the grown buffer layer 200 becomes a good polycrystal, and the polycrystal is used as a seed crystal to improve the crystallinity of the first conductive semiconductor layer 300 grown on the buffer layer 200. have.

The buffer layer 200 may be a stack of at least two buffer layers. For example, the buffer layer 200 may include a first buffer layer stacked on the substrate 100 and a second buffer layer stacked on the first buffer layer.

The first buffer layer may be a low temperature buffer layer. The low temperature buffer layer can be formed by adopting LT-GaN as a material. The low temperature buffer layer may be formed to a thickness of approximately 250 μs.

The second buffer layer may be formed by adopting u (undoped) -GaN that is not doped with an n-type or p-type conductive dopant. When the second buffer layer made of u-GaN is grown, the crystallinity of the first conductivity-type semiconductor layer 300 can be improved.

The second buffer layer has a significantly lower electrical conductivity than the first and second conductivity type semiconductor layers 300 and 500. The second buffer layer may be formed to a thickness of approximately 15,000 Å.

The buffer layer 200 may be at least one layer of the first buffer layer and the second buffer layer. In addition, the buffer layer 200 itself may not be included in the ultraviolet light emitting device according to the embodiment.

The light emitting structure is formed on the buffer layer 200. The light emitting structure may include a first conductive semiconductor layer 300, an active layer 400, a second conductive semiconductor layer 500, an electron blocking layer 600, and a p-type gallium nitride layer 700. Hereinafter, the light emitting structure will be described in detail.

The first conductivity-type semiconductor layer 300 may be, for example, an n-type semiconductor layer, and the material may be GaN. Here, the material of the first conductive semiconductor layer 300 is not limited.

The first conductive semiconductor layer 300 is doped with n-type dopants such as Si, Ge, and Sn. The n-type dopant may be included in the first conductivity type semiconductor layer 300 at a concentration of 3 × 10 18 / cm 3 or more, preferably 5 × 10 18 / cm 3 or more. As described above, when the n-type dopant is heavily doped, the forward voltage Vf and the threshold current may be reduced. Vf will hardly be lowered if the concentration of dopant is out of this range. In addition, when the first conductivity type semiconductor layer 300 is formed on u-GaN having good crystallinity, it may have good crystallinity even though it contains a high concentration of n-type dopant. Although the upper limit of the concentration of the n-type dopant is not limited, in order to retain good crystallinity, the upper limit is preferably 5 × 10 21 / cm 3 or less.

As illustrated in FIG. 1, the first conductivity-type semiconductor layer 300 may have a single layer structure or a multilayer structure. A first conductive semiconductor layer 300 having a multilayer structure will be described with reference to FIG. 2.

FIG. 2 is a diagram illustrating a modified example of the first conductive semiconductor layer 300 shown in FIG. 1.

Referring to FIG. 2, the first conductive semiconductor layer 300 may include a first conductive layer 310, a first superlattice layer 320, a second conductive layer 330, and a second stacked sequentially from the bottom. It may include a superlattice layer 340.

The first conductive layer 310 is an n-type semiconductor layer and may be made of GaN. The first conductive layer 310 is doped with n-type dopants such as Si, Ge, and Sn. The first conductive layer 310 may be formed to a thickness of approximately 30,000 kPa.

The first superlattice layer 320 may have a superlattice structure in which a plurality of layers are repeated a plurality of times. In the first superlattice layer 320, the first to third layers 321, 322, and 323 may be repeated about 10 times. The first layer 321 may be InGaN, the second layer 322 may be GaN, and the third layer 323 may be AlGaN. The first superlattice layer 320 may be formed to a thickness of about 400 mm 3.

The second conductive layer 330 is an n-type semiconductor layer and may be made of GaN. The second conductive layer 330 may be doped with n-type dopants such as Si, Ge, and Sn.

Here, the second conductive layer 330 may have a multilayer structure. For example, the second conductive layer 330 may include a first layer having a first thickness and a second layer having a second thickness. Here, the first layer may be n-GaN, and the second layer may have a multi-layered structure in which n-GaN layers and u-GaN layers are alternately stacked.

The overall thickness of the second conductive layer 330 may be approximately 14,000 kPa. In this case, when the second conductive layer 330 is formed of the first layer and the second layer, the thickness of the first layer may be about 10,000 mW and the thickness of the second layer may be about 4,000 mW.

The second superlattice layer 340 may have a superlattice structure in which a plurality of layers are repeated a plurality of times. In the second superlattice layer 340, the first to fourth layers 341, 342, 343, and 344 may be repeated about 15 times. Here, the first layer 341 may be n-GaN, the second layer 342 may be InGaN, the third layer 343 may be GaN, and the fourth layer 344 may be InGaN. The second superlattice layer 330 may be formed to a thickness of approximately 1,200 Å.

When the first superlattice layer 320 and the second superlattice layer 340 are combined, the light emission output of the light emitting device according to the embodiment may be further improved, and the forward voltage Vf may be further reduced. The reason is not yet determined, but it is expected that the crystallinity of the active layer 400 grown on the second superlattice layer 340 can be improved.

Referring back to FIG. 1, an active layer 400 may be formed on the first conductivity type semiconductor layer 300. In the active layer 400, electrons (or holes) injected through the first conductive semiconductor layer 300 and holes (or electrons) injected through the second conductive semiconductor layer 500 formed thereafter meet each other (Recombination). ), A layer that emits light due to a band gap difference of an energy band according to a material forming the active layer 400.

The active layer 400 may be formed of a single quantum well structure or a multi quantum well structure (MQW).

The active layer 400 generally includes a quantum well layer and a barrier layer. Here, the stacking order of the barrier layer and the quantum well layer is not specifically determined, but may be laminated from the quantum well layer to the quantum well layer, or may be laminated from the quantum well layer to the barrier layer. Further, the barrier layer may be stacked to finish as a barrier layer, or the barrier layer may be stacked to finish as a quantum well layer.

The second conductivity type semiconductor layer 500 may be formed on the active layer 400. More specifically, the second conductivity type semiconductor layer 500 may be formed on the electron blocking layer 600.

For example, the second conductivity-type semiconductor layer 500 may be a p-type semiconductor layer, and the material may be GaN containing no In or Al. The material of the second conductive semiconductor layer 500 is not limited.

The second conductive semiconductor layer 500 is doped with p-type dopants such as Mg and Ba. Here, when the p-type dopant is Mg, the p-type characteristic is easily obtained, and the ohmic contact is easy to be obtained. The concentration of Mg may be 1 × 10 18 / cm 3 to 1 × 10 21 / cm 3, preferably 5 × 10 19 / cm 3 to 3 × 10 20 / cm 3, more preferably 1 × 10 20 / cm 3. If the Mg concentration is within this range, a good p-type film can be easily obtained and the Vf can be lowered.

Here, the second conductivity type semiconductor layer 500 may have a single layer structure or a multilayer structure.

The electron blocking layer 600 is disposed between the active layer 400 and the second conductivity type semiconductor layer 500. More specifically, the electron blocking layer 600 may be disposed between the p-type gallium nitride (p-GaN) layer 700 and the second conductive semiconductor layer 500.

The electron blocking layer 600 may be a semiconductor material having a larger energy band gap than the second conductivity type semiconductor layer 500, for example, AlGaN. The electron blocking layer 600 may effectively prevent electrons provided from the first conductive semiconductor layer 300 from overflowing to the second conductive semiconductor layer 500 without being recombined in the active layer 400.

The thickness of the electron blocking layer 600 may be approximately 300 mm.

The p-type gallium nitride (p-GaN) layer 700 is disposed between the active layer 400 and the electron blocking layer 600.

More specifically, the p-type gallium nitride layer 700 may be disposed between the aluminum gallium nitride (AlGaN) layer formed at the top of the active layer 400 and the aluminum gallium nitride (AlGaN) layer formed at the bottom of the electron blocking layer 600. Can be.

When the p-type gallium nitride layer 700 is disposed between the active layer 400 and the electron blocking layer 600, when the ultraviolet light emitting device according to the embodiment operates at a high current, the active layer in the second conductive semiconductor layer 500 The shortage of holes introduced into the 400 may be solved.

Here, the thickness of the p-type gallium nitride layer 700 may be 10 kPa or more and 15 kPa or less. If the thickness of the p-type gallium nitride layer 700 is less than 10 μs, it is difficult to prevent a hole shortage phenomenon, and if the thickness of the p-type gallium nitride layer 700 is greater than 15 μm, the power of light emitted from the ultraviolet light emitting device according to the exemplary embodiment ( There is a problem of falling power.

The manufacturing method of the ultraviolet light emitting device shown in FIG. 1 will be described.

The substrate 100 made of sapphire (C surface) is set in the reaction vessel of the MOVPE, hydrogen is flowed, the temperature of the substrate 100 is raised to 1050 ° C, and the substrate 100 is cleaned.

Next, the buffer layer 200 is formed on the substrate 100. The following description is intended to be composed of a first buffer layer and a second buffer layer of the buffer layer 200.

The temperature in the reaction vessel is lowered to 510 ° C., and a first buffer layer made of GaN is grown on the substrate 100 to a thickness of about 250 Pa using hydrogen as a carrier gas and ammonia and TMG (trimethylgarium) as a source gas. The first buffer layer grown at the temperature may be omitted depending on the type of substrate, the growth method, and the like.

After growing the first buffer layer, only TMG is stopped and the temperature in the reaction vessel is raised to 1050 ° C. At 1050 ° C., a second buffer layer made of u-GaN is grown to a thickness of about 15,000 kPa in the same manner using TMG and ammonia gas as source gas.

Thereafter, at 1050 ° C., a first conductive layer consisting of GaN doped with 3 × 10 19 / cm 3 of n-type dopant in the same manner using TMG as raw material gas, ammonia gas, and silane gas as impurity gas The type semiconductor layer 300 is grown.

Next, the active layer 400 is grown on the first conductivity type semiconductor layer 300. Specifically, a barrier layer made of n-AlGaN is grown, and a quantum well layer made of InGaN is grown using TMG, TMI, and ammonia. Here, the active layer 400 is laminated from the barrier layer, but the stacking order may be laminated from the quantum well layer and finished at the well layer, or may be laminated from the quantum well layer and finished at the barrier layer, and laminated from the barrier layer and then at the quantum well layer. It may be finished, and the stacking order is not particularly a problem.

Next, the p-type gallium nitride layer 700 is grown on the active layer 400. Here, the thickness of the p-type gallium nitride layer 700 is preferably 10 kPa or more and 15 kPa or less.

Next, the electron blocking layer 600 is grown on the p-type gallium nitride layer 700. The material of the electron blocking layer 600 is made of AlGaN, and grown to a thickness of approximately 300 kPa.

Finally, the second conductivity type semiconductor layer 500 is grown on the electron blocking layer 600. Specifically, at 1050 ° C., a second conductivity-type semiconductor layer 500 made of p-type GaN doped with Mg of 1 × 10 20 / cm 3 using TMG, ammonia, and Cp ₂ Mg is grown to a thickness of approximately 850 Å. Here, the second conductivity-type semiconductor layer 500 may be composed of In _X Al _Y Ga _(1-XY) N (0≤X, 0≤Y, X + Y≤1), and the composition thereof is not particularly limited. However, preferably, GaN makes it easy to obtain a layer having few crystal defects and to obtain a favorable ohmic contact with the p-electrode material.

3 is a view showing an ultraviolet light emitting device according to another embodiment.

Referring to FIG. 3, an ultraviolet light emitting device according to another embodiment may include a substrate 100, a buffer layer 200 ′, a first conductive semiconductor layer 300, an active layer 400, and a second conductive semiconductor layer 500. ) May be included. The substrate 100, the first conductive semiconductor layer 300, the active layer 400, and the second conductive semiconductor layer 500 may include the substrate 100, the first conductive semiconductor layer 300, Since the active layer 400 and the second conductivity-type semiconductor layer 500 are the same, the detailed description is replaced with the above description.

The ultraviolet light emitting device according to another embodiment is different from the light emitting diode shown in FIG. 1, and the buffer layer 200 ′ includes a crack block layer 250 ′.

The contents of the buffer layer 200 'are the same as the buffer layer 200 shown in FIG. Therefore, the detailed description is replaced with the above description.

The crack blocking layer 250 'may be disposed in the buffer layer 200', in particular, in the second buffer layer formed of u-GaN.

The crack blocking layer 250 'includes an aluminum gallium nitride (AlGaN) layer 251', a gallium nitride (GaN) layer 253 'disposed on the aluminum gallium nitride layer 251', and a gallium nitride layer 253 '. It may include an indium gallium nitride (InGaN) layer 255 'disposed on.

The crack blocking layer 250 'of the AlGaN-GaN-InGaN structure can prevent cracks due to heterojunctions having different lattice constants. This is because the V-defect generated when the indium gallium nitride layer 255 'is disconnected from the crack that occurs under the crack blocking layer 250' and the crack occurring on the crack blocking layer 250 '. Therefore, due to the V-defect characteristic of the indium gallium nitride layer 255 ', the crack blocking layer 250' may block a crack, which may occur in the vertical direction, in the middle in the laminated structure of the ultraviolet light emitting device according to another embodiment. Can be. The crack blocking layer 250 ′ is not limited to indium gallium nitride, and may be any semiconductor material that forms a V-defect during layer formation.

The crack blocking layer 250 ′ may have a superlattice structure. Specifically, the crack blocking layer 250 ′ is formed by sequentially stacking aluminum gallium nitride layers 251 ′, gallium nitride layers 253 ′, and indium gallium nitride layers 255 ′, which are stacked ten or more times or fifteen times. It may be a superlattice structure.

The total thickness of the crack blocking layer 250 ′ may be 40 nm or less.

In the crack blocking layer 250 ′, the positions of the aluminum gallium nitride layer 251 ′ and the indium gallium nitride layer 255 ′ may be interchanged.

4 is a diagram illustrating the ultraviolet light emitting device shown in FIG. 1 applied to a horizontal light emitting device.

In the horizontal light emitting device illustrated in FIG. 4, a portion of the first conductive semiconductor layer 300 is exposed by performing mesa etching on the ultraviolet light emitting device illustrated in FIG. 1, and the exposed first conductive material is exposed. The first electrode 900a may be formed on the semiconductor layer 300.

The transparent electrode layer 800 may be formed on the second conductive semiconductor layer 500. The transparent electrode layer 800 includes ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx, RuOx At least one of / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, but is not limited to such materials. The transparent electrode layer 800 may make ohmic contact between the second conductivity-type semiconductor layer 500 and the second electrode 900b.

Meanwhile, a reflective electrode layer may be formed instead of the transparent electrode layer 800, and the reflective electrode layer may include silver (Ag), alloy containing silver (Ag), aluminum (Al), or aluminum (Al) having high reflectance. It may be formed of at least one.

The second electrode 900b may be formed on the transparent electrode layer 800. The second electrode 900b together with the first electrode 900a provides power to the horizontal light emitting device.

On the other hand, although not shown in the drawings, it is obvious that the ultraviolet light emitting device according to another embodiment shown in Figure 3 can also be applied to the horizontal light emitting device as shown in FIG.

FIG. 5 is a view showing the ultraviolet light emitting device shown in FIG. 1 applied to a vertical light emitting device.

In the vertical light emitting device shown in FIG. 5, the reflective layer 800 ′ and the conductive support member 900 b ′ are formed on the second conductive semiconductor layer 500 of the light emitting device shown in FIG. 1. It may be formed by removing the substrate 100 shown.

The reflective layer 800 ′ may be formed on the second conductive semiconductor layer 500. Reflective layer 800 ′ is a high reflectance silver (Ag), an alloy containing silver (Ag), aluminum (Al), an alloy containing aluminum (Al), an alloy containing platinum (Pt) or platinum (Pt) It may be formed of at least one of.

The conductive support member 900b 'may be formed on the reflective layer 800'. The conductive support member 900b 'supplies power to the vertical light emitting device shown in FIG.

The conductive support member 900b 'includes titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), copper (Cu), and molybdenum ( Mo) or at least one of the semiconductor substrate implanted with impurities.

Meanwhile, an adhesive layer (not shown) may be further formed between the conductive support member 900b 'and the reflective layer 800' to improve the interfacial bonding force between the two layers. In addition, an ohmic layer (not shown) may be further formed between the second conductive semiconductor layer 500 and the reflective layer 800 ′ for ohmic contact between the two layers.

The substrate 100 shown in FIG. 1 may be removed by a laser lift off (LLO) process or may be removed by an etching process, but is not limited thereto. After removing the substrate 100, a portion of the buffer layer 200 and the first conductive semiconductor layer 300 may be removed by an etching process, for example, inductively coupled plasma / reactive ion etching (ICP / RIE). It does not limit to this.

After the substrate 100 is removed, an electrode 900a 'may be formed on any one of the exposed first conductive semiconductor layer 300 and the buffer layer 200. The electrode 900a 'and the conductive support member 900b' provide power to the vertical light emitting device according to the embodiment.

On the other hand, although not shown in the drawings, it is obvious that the ultraviolet light emitting device according to another embodiment shown in Figure 3 can also be applied to the vertical light emitting device as shown in FIG.

6 is a cross-sectional view of a light emitting device package according to the embodiment.

Referring to FIG. 6, the light emitting device package according to the embodiment may be installed on the package body 1000 and the first electrode layer 2000, the second electrode layer 3000, and the package body 1000 formed on the package body 1000. The light emitting device 4000 may be electrically connected to the first electrode layer 2000 and the second electrode layer 3000, and the filler 5000 may be embedded in the light emitting device 4000.

The package body 1000 may include a silicon material, a synthetic resin material, or a metal material, and may have an inclined surface formed around the light emitting device 4000. The inclined surface may increase the light extraction efficiency of the light emitting device package.

The first electrode layer 2000 and the second electrode layer 3000 are electrically separated from each other, and provide power to the light emitting device 4000. In addition, the first electrode layer 2000 and the second electrode layer 3000 may increase light efficiency by reflecting light generated from the light emitting device 4000, and discharge heat generated from the light emitting device 4000 to the outside. Can play a role.

The light emitting device 4000 may be disposed on the package body 1000 or may be disposed on the first electrode layer 2000 or the second electrode layer 3000. The light emitting device 4000 may be electrically connected to the first electrode layer 2000 and the second electrode layer 3000 by any one of a wire method, a flip chip method, or a die bonding method.

The light emitting device 4000 may be any one of the light emitting devices shown in FIGS. 4 to 5. Therefore, the light emitting device 4000 may emit light in the ultraviolet region. For example, the light emitting device 4000 may emit ultraviolet rays within a range of 360 nm to 400 nm.

Filler 5000 is embedded to protect the light emitting device (4000). In addition, the filler 5000 may include a phosphor to change the wavelength of light emitted from the light emitting device 4000.

The light emitting device package illustrated in FIG. 6 may mount at least one or more light emitting devices of the above-described embodiments, but is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. .

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those of ordinary skill in the art to which the present invention pertains should not be exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100: substrate
200: buffer layer
250: crack blocking layer
300: first conductive semiconductor layer
400: active layer
500: second conductivity type semiconductor layer
600: electronic blocking layer
700: p-GaN layer

Claims (14)

delete delete delete delete delete delete delete delete delete delete Package body;
A light emitting element disposed in the package body;
A first electrode layer and a second electrode layer disposed on the package body and electrically connected to the light emitting device; And
It includes; filling the light emitting element;
The light emitting element is an ultraviolet light emitting element having an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and emitting ultraviolet rays,
The first conductive semiconductor layer includes a first conductive layer, a first superlattice layer, a second conductive layer, and a second superlattice layer,
The first superlattice layer has a superlattice structure in which an InGaN layer / GaN layer / AlGan layer is repeated a plurality of times,
The second superlattice layer has a superlattice structure in which n-GaN layer / InGaN layer / GaN layer / InGan layer is repeated a plurality of times.
The ultraviolet light emitting device further includes a buffer layer disposed under the first conductivity type semiconductor layer,
The buffer layer includes a crack blocking layer,
The buffer layer
A first buffer layer stacked on the substrate; And
A second buffer layer stacked on the first buffer layer,
The first buffer layer is a low temperature buffer layer, the low temperature buffer layer is formed of LT-GaN, is formed to a thickness of 250 Å,
The second buffer layer is formed of u (undoped) -GaN without an n-type or p-type conductive dopant, and is formed to a thickness of 15,000 kHz,
The crack blocking layer
An aluminum gallium nitride layer disposed on the second buffer layer; A gallium nitride layer disposed on the aluminum gallium nitride layer; And an indium gallium nitride layer disposed on the gallium nitride layer. delete The method of claim 11,
The thickness of the first superlattice layer is 400 GPa, the thickness of the second superlattice layer is 1,200 GPa, UV light emitting device package. The method of claim 11,
The second conductive semiconductor layer is formed of p-GaN, the ultraviolet light emitting device package is formed to a thickness of 850 kHz.

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