JPWO2021015070A1 - - Google Patents

Info

Publication number
JPWO2021015070A1
JPWO2021015070A1 JP2021533975A JP2021533975A JPWO2021015070A1 JP WO2021015070 A1 JPWO2021015070 A1 JP WO2021015070A1 JP 2021533975 A JP2021533975 A JP 2021533975A JP 2021533975 A JP2021533975 A JP 2021533975A JP WO2021015070 A1 JPWO2021015070 A1 JP WO2021015070A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021533975A
Other languages
Japanese (ja)
Other versions
JP7493250B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021015070A1 publication Critical patent/JPWO2021015070A1/ja
Application granted granted Critical
Publication of JP7493250B2 publication Critical patent/JP7493250B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H04N23/21—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from near infrared [NIR] radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2021533975A 2019-07-22 2020-07-15 Pixel, solid-state imaging device, and pixel manufacturing method Active JP7493250B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019134322 2019-07-22
JP2019134322 2019-07-22
JP2020018082 2020-02-05
JP2020018082 2020-02-05
PCT/JP2020/027504 WO2021015070A1 (en) 2019-07-22 2020-07-15 Pixel, solid-state image pickup device, and method of manufacturing pixel

Publications (2)

Publication Number Publication Date
JPWO2021015070A1 true JPWO2021015070A1 (en) 2021-01-28
JP7493250B2 JP7493250B2 (en) 2024-05-31

Family

ID=74193473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021533975A Active JP7493250B2 (en) 2019-07-22 2020-07-15 Pixel, solid-state imaging device, and pixel manufacturing method

Country Status (2)

Country Link
JP (1) JP7493250B2 (en)
WO (1) WO2021015070A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509358A (en) * 2002-12-09 2006-03-16 クォンタム セミコンダクター リミテッド ライアビリティ カンパニー CMOS image sensor
JP2010263158A (en) * 2009-05-11 2010-11-18 Sony Corp Two-dimensional solid-state imaging device and polarized light data processing method in two-dimensional solid-state imaging device
JP2012064703A (en) * 2010-09-15 2012-03-29 Sony Corp Image sensor and image pick-up device
JP2015232599A (en) * 2014-06-09 2015-12-24 ソニー株式会社 Optical filter, solid state image pickup device, and electronic apparatus
WO2016136502A1 (en) * 2015-02-26 2016-09-01 ソニー株式会社 Solid state imaging element, and electronic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509358A (en) * 2002-12-09 2006-03-16 クォンタム セミコンダクター リミテッド ライアビリティ カンパニー CMOS image sensor
JP2010263158A (en) * 2009-05-11 2010-11-18 Sony Corp Two-dimensional solid-state imaging device and polarized light data processing method in two-dimensional solid-state imaging device
JP2012064703A (en) * 2010-09-15 2012-03-29 Sony Corp Image sensor and image pick-up device
JP2015232599A (en) * 2014-06-09 2015-12-24 ソニー株式会社 Optical filter, solid state image pickup device, and electronic apparatus
WO2016136502A1 (en) * 2015-02-26 2016-09-01 ソニー株式会社 Solid state imaging element, and electronic device

Also Published As

Publication number Publication date
WO2021015070A1 (en) 2021-01-28
JP7493250B2 (en) 2024-05-31

Similar Documents

Publication Publication Date Title
BR112019017762A2 (en)
BR112021017339A2 (en)
BR112021018450A2 (en)
BR112021017637A2 (en)
BR112021017892A2 (en)
BR112021017782A2 (en)
BR112021016821A2 (en)
BR112021017939A2 (en)
BR112021017738A2 (en)
BR112021016996A2 (en)
BR112021008711A2 (en)
BR112019016141A2 (en)
BR112021017728A2 (en)
BR112021013944A2 (en)
BR112021018452A2 (en)
BR112021017703A2 (en)
BR112021018102A2 (en)
BR112019016142A2 (en)
BR112019016138A2 (en)
BR112021017732A2 (en)
BR112021017234A2 (en)
BR112021017355A2 (en)
BR112021018168A2 (en)
BR112021018093A2 (en)
BR112021017173A2 (en)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230613

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240507

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240514

R150 Certificate of patent or registration of utility model

Ref document number: 7493250

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150