JPWO2008129982A1 - Substrate processing method and system, and device manufacturing method - Google Patents

Abstract

An object of the present invention is to provide a substrate processing system capable of performing exposure while maintaining the flatness of the surface of a substrate such as a wafer high and processing the substrate smoothly. A wafer processing system in which exposure is performed in a state where a glass plate that transmits exposure light is in close contact with the surface, and a wafer storage device (500) for assembling a wafer pack by bringing the glass plate into close contact with the surface of the wafer to be exposed; And an exposure apparatus (EX) that exposes the wafer with exposure light through the glass plate, a wafer take-out device (520) that separates the wafer and the glass plate, and a transport system (600) that transports the glass plate.

Description

  The present invention relates to a substrate processing technique for processing a substrate to be exposed. For example, a pattern such as a mask is formed on a substrate in a lithography process for manufacturing various devices such as a semiconductor integrated circuit, a liquid crystal display element, or a thin film magnetic head. It can be applied when transferring to.

  For example, in a lithography process for manufacturing a semiconductor integrated circuit, a pattern formed on a reticle (or photomask or the like) is applied to a wafer (or glass plate or the like) coated with a photoresist as a substrate via a projection optical system. In order to transfer to each shot area, an exposure apparatus such as a batch exposure type projection exposure apparatus such as a stepper and a scanning exposure type projection exposure apparatus such as a scanning stepper is used. Among these, in an exposure apparatus that uses a wafer as an exposure target, positions in two orthogonal directions (X direction and Y direction) in a plane perpendicular to the optical axis of the projection optical system of the wafer, and positions in the optical axis direction thereof. A wafer stage is provided for controlling the (focus position) and the inclination angle (leveling) around two orthogonal directions.

A conventional wafer stage includes, for example, a wafer holder having a flat surface or a surface on which a large number of pins or grooves are formed, and the back surface of the wafer is held on the wafer holder by vacuum suction or electrostatic suction (for example, Patent Document 1).
Japanese Patent Laid-Open No. 10-321691

In general, the surface of the wafer, which is an exposed surface, is polished and has good flatness, but the flatness of the back surface is inferior to that of the front surface. For this reason, in a mechanism that sucks and holds the wafer on the back surface of the wafer as in a conventional wafer stage, there is a risk that the flatness of the surface of the wafer will be reduced during exposure.
In view of such problems, the present invention can maintain high flatness during exposure of a substrate to be exposed, and can smoothly transfer a substrate between the exposure apparatus and another coater / developer. An object is to provide a substrate processing technique and a device manufacturing technique.

  The substrate processing method according to the present invention is a substrate processing method in which exposure is performed in a state where a flat plate member that transmits exposure light is in close contact with the surface, and the flat plate member is in close contact with the surface of the substrate to be exposed. A step, an exposure step of exposing the substrate through the flat plate member with exposure light, and a separation step of separating the substrate and the flat plate member.

The substrate processing system according to the present invention is a substrate processing system in which exposure is performed in a state where a flat plate member that transmits exposure light is in close contact with the surface, and the flat plate member is in close contact with the surface of the substrate to be exposed. An exposure unit that exposes the substrate through the flat plate member with exposure light, and a separation unit that separates the substrate and the flat plate member.
The device manufacturing method according to the present invention uses the substrate processing method or substrate processing system of the present invention in the lithography process in a device manufacturing method including a lithography process.

According to the present invention, the substrate is exposed with its surface in close contact with the flat plate member. That is, since the substrate is held with a surface reference having good flatness, the flatness during exposure can be maintained high.
Further, since the substrate and the flat plate member can be assembled immediately before exposure, and the substrate and the flat plate member can be separated immediately after exposure, the substrate and the flat plate member are separated during a period of no exposure. Therefore, it is possible to smoothly transfer the substrate between the exposure apparatus and another coater / developer.

It is a perspective view which shows the exposure apparatus used in 1st Embodiment. FIG. 2 is a partially cutaway view showing a wafer drive mechanism of the exposure apparatus of FIG. 1. FIG. 3 is an exploded perspective view showing the wafer pack 28 of FIG. 2. FIG. 3 is a diagram illustrating an example of an assembly process of the wafer pack 28 of FIG. 2. 5A is a plan view showing an example of the magnetization pattern of the magnetic plate 62 on the wafer base 41 of FIG. 2, and FIG. 5B is a diagram showing a part of another example of the magnetization pattern of the magnetic plate 62. is there. 6A is a plan view showing an example of movement of the wafer pack 28 and the XY coil carrier 40 when the wafer is scanned in the Y direction, and FIG. 6B is a wafer pack when the wafer is stepped in the X direction. It is a top view which shows an example of a motion of 28 and XY coil carrier 40. FIG. 1 is a block diagram showing a wafer processing system WT of a first embodiment. It is a flowchart which shows the first half part of the processing method of the wafer of 1st Embodiment. FIG. 9 is a flowchart illustrating a wafer processing method following FIG. 8. FIG. It is a flowchart which shows the processing method of the wafer pack of 1st Embodiment. It is explanatory drawing of three separation methods of the glass plate 29 and the wafer W. FIG. It is explanatory drawing of another three isolation | separation methods of the glass plate 29 and the wafer W. FIG. It is the figure which notched the part which shows the principal part of the exposure apparatus of 2nd Embodiment.

Explanation of symbols

  R ... reticle, PL ... projection optical system, W ... wafer, 21W ... projection region, 28 ... wafer pack, 29 ... glass plate, 30 ... frame, 33 ... diaphragm, 34 ... magnetic plate, 35 ... buffer member, 36A-36C ... Z actuator, 37 ... electrostatic bearing member, 64 ... first planar motor, 72 ... second planar motor

[First Embodiment]
Hereinafter, a preferred first embodiment of the present invention will be described with reference to FIGS. In this example, the present invention is applied to a wafer processing system (see FIG. 7) including a scanning exposure type exposure apparatus (projection exposure apparatus) comprising a scanning stepper. First, the exposure apparatus will be described.

FIG. 1 shows a schematic configuration of the exposure apparatus EX of this example. In FIG. 1, an exposure apparatus EX includes an illumination system 20 that illuminates a reticle R (mask) on which a transfer pattern is formed using exposure light IL (exposure beam), a reticle stage RST that drives the reticle R, A projection optical system PL that projects an image of the pattern of the reticle R onto a wafer W (substrate), a wafer drive mechanism that drives the wafer W, and a main control system 51 that includes a computer that comprehensively controls the operation of the entire apparatus; And a processing system for performing various other controls or calculations. In this example, ArF excimer laser light (wavelength 193 nm) is used as the exposure light IL. As the exposure light, ultraviolet pulsed laser light such as KrF excimer laser light (wavelength 248 nm), F ₂ laser light (wavelength 157 nm), harmonics of YAG laser, harmonics of solid-state laser (semiconductor laser, etc.), or mercury Lamp bright lines (i-line etc.) can also be used.

  The illumination system 20 includes an exposure light source and an illumination optical system as disclosed in, for example, Japanese Patent Application Laid-Open No. 2001-313250 (corresponding US Patent Application Publication No. 2003/0025890). The illumination optical system includes an illuminance uniformizing optical system including an optical integrator (a fly-eye lens, a rod integrator (an internal reflection type integrator), a diffractive optical element, etc.), a reticle blind, and the like (all not shown). The illumination system 20 illuminates the slit-shaped illumination region 21R on the reticle R defined by the reticle blind (masking system) with the exposure light IL with a substantially uniform illuminance distribution.

  Under the exposure light IL, the pattern in the illumination area 21R of the reticle R is projected onto the wafer W at a projection magnification β (β is, for example, 1/4, 1/5, etc.) via the both-side telecentric projection optical system PL. Is projected onto a projection area 21W (see FIG. 6A) elongated in the non-scanning direction on one shot area. In this example, a wafer W as a substrate to be exposed is obtained by applying a photoresist (photosensitive material) to the surface of a disk-shaped substrate made of a semiconductor such as silicon or SOI (silicon on insulator). Further, the surface of the disk-shaped base material constituting the wafer W (the surface serving as the exposure surface) is polished to a surface with extremely high flatness. As a result, the surface of the wafer W on which the photoresist is applied is also a surface with extremely high flatness. On the other hand, the flatness of the back surface of the disk-shaped base material constituting the wafer W, that is, the back surface of the wafer W is inferior to that of the front surface.

  The projection optical system PL of this example is a refractive system, for example, but a catadioptric system or the like can also be used. Hereinafter, in FIG. 1, the Z-axis is taken in parallel to the optical axis of the projection optical system PL, and along a non-scanning direction orthogonal to the scanning direction of the reticle R and the wafer W during scanning exposure in a plane perpendicular to the Z-axis. A description will be given by taking the X axis and taking the Y axis along the scanning direction. In the following, the directions parallel to the X, Y, and Z axes are referred to as the X, Y, and Z directions, respectively, and the rotation angles (tilt angles) around the axes that are parallel to the X, Y, and Z axes. Are called θX, θY, and θZ, respectively. In this example, the plane parallel to the X axis and the Y axis (XY plane) is almost a horizontal plane, and the −Z direction is vertically downward.

  First, the reticle R is attracted and held on the reticle stage RST, and the reticle stage RST moves on the reticle base 24 at a constant speed in the Y direction. For example, a synchronization error (or a pattern image of the reticle R and the exposure on the wafer W is being exposed). The reticle R is scanned by finely moving in the X direction, the Y direction, and the rotational directions around the Z axis so as to correct the positional deviation amount from the shot area. Laser interferometers 25X and 25Y are arranged to face the reflecting surfaces (or moving mirrors, corner reflectors, etc.) on the side surfaces of reticle stage RST in the X direction and Y direction. The laser interferometers 25X and 25Y irradiate the corresponding reflecting surface with a laser beam (at least one of which is a multi-axis laser beam), for example, at least in the X direction and Y direction of the reticle stage RST with reference to the projection optical system PL. The position is measured with a resolution of about 0.1 nm, the rotation angle θZ is measured, and the measured value is supplied to the stage control system 53 and the main control system 51. The stage control system 53 controls the position and speed of the reticle stage RST via a drive mechanism (such as a linear motor) (not shown) based on the measurement value and the control information from the main control system 51.

  In addition, alignment marks 23A and 23B are formed so as to sandwich the pattern region 22 of the reticle R in the X direction. Above the reticle R, reticle alignment microscopes 26A and 26B for detecting the positions of the alignment marks 23A and 23B are arranged via optical path bending mirrors. Detection signals from the reticle alignment microscopes 26A and 26B are supplied to an alignment signal processing system 54. The alignment signal processing system 54 supplies information on mark positions detected by an image processing method or the like to the main control system 51.

  An annular electrostatic bearing member 37 is installed on the lower peripheral edge of the lens barrel of the projection optical system PL via Z actuators 36A, 36B, and 36C that extend and contract in the Z direction at approximately three equiangular intervals, respectively. A clean and compressed gas of the same type as the gas (for example, dry air, nitrogen, or helium) in the atmosphere through which the exposure light IL passes from the compressor 38 through the flexible pipe 39 to the electrostatic bearing member 37. Have been supplied. Wafers W housed in a wafer pack 28 which is a shallow box-like container are arranged at a predetermined interval on the bottom surface side of the electrostatic bearing member 37. The upper part of the wafer pack 28 is sealed with a rectangular parallel plane plate-like glass plate 29 having a uniform thickness, and the entire surface of the wafer W (exposure surface coated with a photoresist) is the projection optical system PL of the glass plate 29. The wafer W is biased and / or adsorbed on the glass plate 29 side so as to be in close contact with the opposite surface.

The glass plate 29 is formed of a glass material such as quartz or fluorite (CaF ₂ ) that transmits the exposure light IL, and the flatness of the surface of the glass plate 29 on which the surface of the wafer W is in close contact and the surface opposite thereto. Is processed to be equal to or higher than the flatness of the surface of the wafer W, and the wafer W is exposed through the glass plate 29 by the exposure light IL. Note that the higher the refractive index of the object between the optical member at the tip of the projection optical system PL and the surface of the wafer W, the higher the resolution of the image of the projection optical system PL and the greater the depth of focus. The plate 29 is preferably made of a glass material that transmits the exposure light IL and has a refractive index as high as possible with respect to the exposure light IL.

The thickness of the glass plate 29 is such that the working distance WD between the projection optical system PL and the wafer W when the glass plate 29 is not present (when there is a member closer to the wafer W than the tip of the projection optical system PL). It is preferable that the thickness be as large as possible under the condition that the distance between the member and the wafer W is approximately a predetermined margin less than the optical path length obtained by multiplying the refractive index np of the glass plate 29. The predetermined margin is the maximum variation in the position in the Z direction when the glass plate 29 and the wafer W are integrally driven in the X direction and the Y direction as will be described later. As an example, the wafer W has a disk shape with a thickness of about 0.75 mm and a diameter of about 200 to 300 mm, and the glass plate 29 has a rectangular shape (which may be a square) that can cover the entire surface of the wafer W. Is a flat plate having a length of about 1 mm.
In addition, if it has a function substantially the same as such a glass plate 29, it can replace with the glass plate 29 and can also use the member which consists of another material.

  FIG. 2 is a partially cutaway view showing the wafer drive mechanism of the exposure apparatus EX of FIG. In FIG. 2, the Z actuator 36A includes an L-shaped first member 36A1 fixed to the electrostatic bearing member 37, and an electric electrode that is disposed so as to support the tip portion in the + Z direction and can expand and contract in the Z direction. The driving element 36A2 such as a distortion element (piezo element or the like) or a magnetostriction element, and an L-shaped second member 36A3 that connects the bottom surface of the driving element 36A2 and the lens barrel of the projection optical system PL. The other Z actuators 36B and 36C are similarly provided with drive elements 36B2 and 36C2, respectively, and the stage control system 53 controls the expansion / contraction amount of the drive elements 36A2 to 36C2, and the three Z-directions of the electrostatic bearing member 37 are arranged in the Z direction. By controlling the position, the position in the Z direction of the electrostatic bearing member 37 with respect to the projection optical system PL and the inclination angles θX and θY can be finely adjusted.

  In the exposure apparatus EX of FIG. 1, the reticle base 24 and the projection optical system PL are supported by different columns (not shown) that are separated in a vibrational manner as an example. In FIG. 2, the second member (36A3, etc.) fixed to the lens barrel of the projection optical system PL in the Z actuators 36A to 36C is vibrationally separated from the column supporting the projection optical system PL. It may be fixed to another column.

  An annular electrode member 75 is embedded in an insulating member such as a synthetic resin on the bottom surface side of the electrostatic bearing member 37. The electrode member 75 is actually divided into three around the optical axis AX of the projection optical system PL at equal angular intervals, and the charges (or relative potentials) of the three divided electrode members 75A, 75B, and 75C. The stage control system 53 can be controlled independently. Further, a large number of blowing holes 37 a are formed through the electrode member 75 to the bottom surface of the electrostatic bearing member 37 (the surface facing the glass plate 29 of the wafer pack 28), and these blowing holes 37 a are formed on the electrostatic bearing member 37. The compressor 38 is connected to the vent hole 37b through a pipe 39. The compressor 38 is connected to the vent hole 37b. In this case, when the stage control system 53 gives an electric charge (for example, positive charge) to the electrode member 75 of the electrostatic bearing member 37, a polarization electric charge (for example, a negative electric charge) having a reverse sign is generated on the upper surface of the glass plate 29. The glass plate 29 is attracted to the electrostatic bearing member 37 side (+ Z direction) by an electrostatic field. Further, the stage control system 53 controls the flow rate of the gas blown from the compressor 38 to the glass plate 29 side (in the −Z direction) through the numerous blowout holes 37 a of the electrostatic bearing member 37. Is prevented from coming into contact with the electrostatic bearing member 37. Accordingly, the wafer pack 28 including the glass plate 29 is held against the electrostatic bearing member 37 so as to float in a non-contact state at a predetermined interval in the Z direction by an air preload electrostatic bearing system.

  Furthermore, since the electrode member 75 is actually divided into three electrode members 75A to 75C, the stage control system 53 individually applies the suction force due to static electricity to the glass plate 29 by the three electrode members 75A to 75C. By controlling, the relative positional relationship consisting of the position (focus position) of the wafer pack 28 in the Z direction with respect to the projection optical system PL and the tilt angles θX and θY (leveling) is adjusted. The driving amount of the wafer pack 28 in the Z direction by the individual electrode members 75A to 75C is, for example, about several nanometers to several tens of nanometers. For this purpose, the light projection unit 61A that projects an image of a predetermined pattern onto the projection area 21W on the wafer W inside the electrostatic bearing member 37 and / or a plurality of measurement points in the vicinity of the projection area 21W, and the light reflected by the wafer W. An autofocus sensor (hereinafter referred to as an AF sensor) 61 that includes a light receiving unit 61B that receives the detection light and detects the positions of the plurality of measurement points in the Z direction is provided.

  The light projecting unit 61A and the light receiving unit 61B are configured such that, for example, only a part of the optical system such as a mirror that bends the detection light is disposed inside the electrostatic bearing member 37. It is arranged on the side of the system PL. By processing the measurement values of the AF sensor 61, the focus position and the inclination angle of the average surface of the projection area 21W on the surface of the wafer W can be obtained, and these measurement results are supplied to the stage control system 53. The As the AF sensor 61, for example, one disclosed in JP-A-8-37149 can be used. The AF sensor 61 measures the position in the Z direction of the measurement point on the upper surface of the glass plate 29 instead of the measurement point on the surface of the wafer W, and subtracts the known thickness of the glass plate 29 from the measurement result. Thus, the position in the Z direction on the surface of the wafer W may be obtained indirectly.

  In this case, as an example, when the focus position and the tilt angle of the test surface measured by the AF sensor 61 are each 0 by test print or the like, the test surface matches the image plane of the projection optical system PL. Thus, the initial offset adjustment of the AF sensor 61 is performed. Therefore, in the stage control system 53 at the time of exposure to the wafer W, the three in the electrostatic bearing member 37 are set so that the focus position and the tilt angle of the projection area 21W of the wafer W measured by the AF sensor 61 become 0, respectively. The suction force with respect to the glass plate 29 by the electrode members 75A to 75C is controlled. As a result, exposure is performed with the surface of the wafer W always in focus on the image plane of the projection optical system PL.

  Further, for example, when a new offset occurs in the measured value of the AF sensor 61, the Z actuators 36A to 36C in FIG. 1 are driven so as to correct the offset, and the focus position and inclination of the electrostatic bearing member 37 are corrected. The corner may be finely adjusted. This facilitates control of the three electrode members 75A to 75C in the electrostatic bearing member 37. The blowing holes 37a of the electrostatic bearing member 37 are divided into three sets of blowing hole groups at equal angular intervals, and the flow rate of the gas blown out from these three sets of blowing hole groups to the wafer pack 28 is independently controlled. Thus, the focus position and leveling angle of the wafer pack 28 may be controlled.

  As shown in FIG. 2, the wafer pack 28 is mounted on a top surface of a frame 30 made of metal, ceramics, or the like having a rectangular frame-like linear expansion coefficient, and on the bottom surface 29a. A thin plate-like diaphragm 33 made of a non-magnetic metal plate fixed to the bottom surface of the frame 30 by welding or the like and having a certain degree of flexibility, and the diaphragm 33 A rectangular flat magnetic plate 34 fixed to the upper surface (the surface facing the wafer W) and having a predetermined magnetization pattern periodically formed between the back surface of the wafer W and the upper surface of the magnetic plate 34. A buffer member 35 having a rectangular shape (or a circular shape similar to the wafer W, etc.) and having flexibility in at least the Z direction is provided. The buffer member 35 is made of, for example, synthetic rubber or synthetic resin (for example, fluorine resin) and is fixed on the magnetic plate 34 by adhesion or the like. The wafer W is urged toward the glass plate 29 from the diaphragm 33 and the magnetic plate 34 via the buffer member 35.

  Further, FIG. 3 is an exploded perspective view showing the wafer pack 28 of FIG. As shown in FIG. 3, a substantially rectangular closed groove 30a is formed at the periphery of the upper surface of the frame 30, and a flexible O-ring 32 such as synthetic rubber or synthetic resin is mounted in the groove 30a. Yes. When the glass plate 29 is placed on the upper surface of the frame 30, a space surrounded by the glass plate 29, the frame 30 and the diaphragm 33 (a space in which the wafer W is stored) is hermetically sealed by the O-ring 32. A number of suction holes 30 c are formed from the inside of the O-ring 32 on the upper surface of the frame 30 to the inner surface of the frame 30. As shown in FIG. 2, an exhaust hole 30d is formed on the side surface in the -Y direction of the frame 30, and an exhaust pipe 31 having an opening / closing valve 31a is connected to the exhaust hole 30d. In this case, with the valve 31a opened in advance, the inside of the wafer pack 28 is evacuated to a negative pressure through the exhaust pipe 31, and the surface of the wafer W is substantially back-surface 29a of the glass plate 29 by vacuum suction. It is held in close contact with. At this time, the glass plate 29 is vacuum-sucked to the frame 30 through the numerous suction holes 30c of the frame 30, and the valve 31a is closed in this state. In this example, since the wafer W is also urged to the glass plate 29 side by the buffer member 35, the degree of vacuum in the wafer pack 28 is as long as the glass plate 29 can be stably adsorbed to the frame 30. Good.

  In FIG. 3, the outer surfaces of the frame 30 in the + X direction and the + Y direction are orthogonal to each other and finished to have a high flatness reflecting surface capable of reflecting the laser beam. A thin movable mirror for reflecting the laser beam may be fixed to the outer surface of the frame 30 in the + X direction and the + Y direction. Further, on the outer surface of the frame 30 in the ± X direction, small flat projections 30b are formed at a plurality of locations, and the frame 30 (wafer pack 28) is formed via the projections 30b by a wafer pack transfer arm 43. ) Can be transported easily. As will be described later, in the process of storing the wafer W in the wafer pack 28 as described later, the frame 30 may be reversed as an example (the surface on which the glass plate 29 is placed is vertically downward). In practice, the arm 43 stably holds the convex portion 30b so as to sandwich the convex portion 30b vertically. By way of example, the arm 43 transports the wafer pack 28 below the projection optical system PL of the exposure apparatus EX shown in FIG.

  Further, in FIG. 3, the magnetic plate 34 of the wafer pack 28 has, as an example, a magnetizing unit comprising four magnet portions MB1, MB2, MB3, MB4 that are radially magnetized so as to intersect the X axis and the Y axis at 45 °. Magnetization patterns are formed in which MUBs are two-dimensionally arranged in the X and Y directions with periods BX and BY, respectively. Actually, the magnetization pattern is formed with a predetermined thickness on the bottom surface (surface in contact with the diaphragm 33) side of the magnetic plate 34. In practice, the magnetization unit MUB is preferably perpendicularly magnetized (alternately magnetized in the ± Z directions). Moreover, you may comprise the magnetic board 34 as an aggregate | assembly of many independent permanent magnets which make magnet part MB1-MB4 a unit.

  The material of the magnetic plate 34 is a ferromagnetic material such as cobalt, nickel, or neodymium iron boron. Further, the magnetic plate 34 is formed of a magnetic material having an extremely small linear expansion coefficient at room temperature (for example, 23 ° C.) where the exposure apparatus EX of the present example is installed, preferably a magnetic material having a linear expansion coefficient of approximately zero. . An example of a material having a linear expansion coefficient of approximately zero is a super invar magnet. As a result, when the magnetic plate 34 (wafer pack 28) is driven by magnetic force as will be described later, even if the temperature of the magnetic plate 34 rises to some extent, the wafer pack 28 and the wafer W inside thereof are distorted. There is nothing.

Here, an example of a process of storing the unexposed wafer W in the wafer pack 28 in a work area arranged close to the exposure apparatus EX will be described with reference to FIG.
First, as shown in FIG. 4 (A), the glass plate 29 is inverted and is vacuum-adsorbed on the support member 44 so that its bottom surface 29a (surface on which the wafer W abuts) faces vertically upward (+ Z direction). It is held by electrostatic adsorption. Next, the wafer transfer arm 45 is lowered after the front surface Wa of the wafer W faces the bottom surface 29a of the glass plate 29 with the back surface of the wafer W held by vacuum suction or the like at the tip of the wafer transfer arm 45. . 4B, after the surface of the wafer W comes into contact with the bottom surface 29a of the glass plate 29, the vacuum suction of the wafer transfer arm 45 is released, and the wafer transfer arm 45 is retracted.

  Thereafter, as shown in FIG. 4C, the frame 30 on which the diaphragm 33, the magnetic plate 34, the buffer member 35, and the O-ring 32 are mounted is inverted by a wafer pack transfer arm (not shown). Then, the arm 30 is lowered and the frame 30 is placed on the bottom surface of the glass plate 29 as shown in FIG. In this state, the wafer W is biased toward the glass plate 29 via the buffer member 35 mainly by the load of the frame 30 and the magnetic plate 34, and the surface of the wafer W is in close contact with the bottom surface of the glass plate 29. ing. Then, the valve 31a of the exhaust pipe 31 of the frame 30 is opened, and the vacuum pump 46 is connected to the exhaust pipe 31 through a flexible pipe 46a. The vacuum pump 46 allows the frame 30, the diaphragm 33, And the gas in the space surrounded by the glass plate 29 is exhausted. As a result, the glass plate 29 is attracted to the frame 30 through the suction holes 30c, and the degree of adhesion of the surface of the wafer W to the bottom surface of the glass plate 29 is increased. In this state, the valve 31a is closed and the piping 46a is removed from the exhaust pipe 31, whereby the wafer W is completely stored in the wafer pack 28. Thereafter, the wafer pack 28 is reversed by the wafer pack transfer arm and transferred to the exposure apparatus EX side in FIG.

  In order to prevent bubbles and the like from being left between the glass plate 29 and the surface of the wafer W, the step of bringing the surface of the wafer W into close contact with the glass plate 29 is performed, for example, in a chamber set to a high vacuum. You may go. Furthermore, the operations from FIG. 4A to FIG. 4D may be performed in a chamber set at a predetermined negative pressure. In this case, by keeping the valve 31a of the exhaust pipe 31 closed, the space surrounded by the frame 30, the diaphragm 33, and the glass plate 29 is automatically set to the negative pressure when the work is completed. The

  Next, when the wafer W exposed by the exposure apparatus EX is taken out from the wafer pack 28, in the state of FIG. 4D (however, it is not necessary to connect the vacuum pump 46 to the exhaust pipe 31). After opening the valve 31a to open the interior of the wafer pack 28 to the atmosphere, the frame 30 is raised as shown in FIG. Next, as shown in FIG. 4B, the wafer transfer arm 45 is lifted by sucking the back surface of the wafer W by the wafer transfer arm 45 in a state where the glass plate 29 is sucked and held on the support member 44 side. Thus, the exposed wafer W can be taken out. The taken out wafer W is transported to a coater / developer, for example, and development of the photoresist is performed.

A method for separating the glass plate 29 and the wafer W when the glass plate 29 and the wafer W (photoresist layer) are in close contact and cannot be separated easily will be described later.
3, the diaphragm 33 is fixed to the frame 30, and the glass plate 29 is detachable from the frame 30, but conversely, the glass plate 29 is fixed to the frame 30 and the diaphragm 33 is fixed. May be detachable from the frame 30.

  Returning to FIG. 1, an XY coil carrier 40 is disposed below the wafer pack 28 in a rectangular flat plate shape and provided with various coils for driving. The XY coil carrier 40 is in a non-contact state by a gas bearing system, It is mounted on a flat wafer base 41 so as to be movable in the X direction, the Y direction, and the rotational direction around the Z axis. On the bottom surface side of the XY coil carrier 40, a drive coil for the first planar motor 64 that drives the XY coil carrier 40 in the X and Y directions with respect to the wafer base 41 and controls the rotation angle θZ is installed. On the upper surface side of the coil carrier 40, the wafer pack 28 (the magnetic plate 34 in FIG. 3) is driven in the X and Y directions with respect to the XY coil carrier 40, and the second planar motor 72 for controlling the rotation angle θZ is controlled. A drive coil is installed.

  Laser interferometers 42X and 42Y are arranged so as to face the reflecting surfaces (or movable mirrors) on the side surfaces of the wafer pack 28 (frame 30) in the + X direction and the + Y direction. The laser interferometers 42A and 42Y irradiate the corresponding reflecting surface with a laser beam (at least one of which is a multi-axis laser beam), for example, with reference to the projection optical system PL, at least the X direction and Y direction of the wafer pack 28 Is measured with a resolution of about 0.1 nm, the rotation angle θZ is measured, and the measured value is supplied to the stage control system 53 and the main control system 51. Furthermore, in this example, as will be described later, the relative position of the wafer pack 28 in the X and Y directions with respect to the XY coil carrier 40 is measured with a resolution of about 10 μm, and a linear encoder for measuring the rotation angle θZ, and the wafer A linear encoder for measuring the relative position of the XY coil carrier 40 with respect to the base 41 in the X direction and the Y direction with a resolution of about 10 μm and for measuring the rotation angle θZ is provided. The measurement values of these linear encoders are also supplied to the stage control system 53. The stage control system 53 receives the wafer pack 28 and the XY coil via the planar motors 64 and 72 based on the measurement values of the laser interferometers 42X and 42Y and their linear encoders and the control information from the main control system 51. The position and speed of the carrier 40 are controlled.

  Further, on the side surface in the + Y direction of the projection optical system PL, an off-axis imaging type alignment sensor ALG for detecting the position of the alignment mark (wafer mark) on the wafer W is arranged. An ALG detection signal is supplied to an alignment signal processing system 54. The alignment signal processing system 54 obtains the array information of all shot areas on the wafer W by the enhanced global alignment method (EGA method) based on the detection signal and supplies it to the main control system 51. In this case, the positional relationship (baseline amount, etc.) between the reference position of the image of the pattern of the reticle R in advance through the projection optical system PL (center of the image of the alignment marks 23A, 23B, etc.) and the detection position of the alignment sensor ALG. Is measured and stored. Therefore, as shown in FIG. 3, a reference mark FM1 and the like are formed in the vicinity of the wafer W on the bottom surface of the glass plate 29 of the wafer pack 28.

  Further, the exposure apparatus EX of this example supplies a liquid such as pure water to a local region (immersion region) between the optical member at the tip of the projection optical system PL and the glass plate 29 on the wafer W, A liquid immersion method is preferred in which the wafer W is exposed with the exposure light IL through the projection optical system PL, the liquid, and the glass plate 29. In this case, in order to suppress the spread of the liquid immersion region, it is preferable to apply a liquid repellent coating to the liquid on the upper surface of the glass plate 29. By adopting the immersion method in this way, the resolution and depth of focus of the projection optical system PL can be improved according to the liquid and the refractive index of the glass plate 29. Accordingly, the liquid is preferably a liquid that transmits the exposure light IL and has a refractive index as large as possible (for example, decalin). In order to perform exposure by the immersion method, for example, as disclosed in WO99 / 49504 or WO2005 / 122221, and as shown in FIG. What is necessary is just to provide the liquid supply apparatus 48 which supplies the liquid LQ via the piping 48a and a nozzle, and the liquid collection | recovery apparatus 49 which collect | recovers the liquid LQ of the liquid immersion area | region via a nozzle and the piping 49a.

  At the time of exposure using the exposure apparatus EX of FIG. 1, the wafer pack 28 containing the unexposed wafer W is placed on the XY coil carrier 40 by a wafer loader system (not shown), and then the alignment of the reticle R and the wafer W is performed. Is done. Thereafter, the illumination light 21 is irradiated from the illumination optical system 20 onto the illumination region 21R on the reticle R in a state where the wafer pack 28 is lifted and held in a non-contact manner via the electrostatic bearing member 37. Then, in a state where the pattern in the illumination area 21R is projected onto the projection area on one shot area on the wafer W via the projection optical system PL, the plane motors of the reticle stage RST and the XY coil carrier 40 are driven, The operation of synchronously moving the reticle R and the wafer W (wafer pack 28) in the Y direction and the irradiation of the exposure light IL are stopped, and the planar motor of the XY coil carrier 40 is driven to move the wafer W (wafer pack 28). The operation of stepping in the X direction and / or the Y direction is repeated. By repeating this operation, the pattern image of the reticle R is exposed to each shot area on the wafer W by the step-and-scan method. Thereafter, the wafer pack 28 containing the exposed wafer W is transferred to a coater / developer (not shown) by a wafer loader system (not shown).

Next, the configuration of the planar motors 64 and 72 for driving the XY coil carrier 40 and the wafer pack 28 of the exposure apparatus EX of FIG. 1 of this example, and the wafer pack 28 and the wafer base 41 and the XY coil carrier 40 are arranged. A configuration of a linear encoder for measuring a two-dimensional relative position will be described.
As shown in FIG. 2, the wafer base 41 of the exposure apparatus EX is installed on the floor FL, and a magnetic plate 62 on which a predetermined magnetization pattern is periodically formed is fixed on the upper surface of the wafer base 41. The upper surface of the magnetic plate 62 is finished with high flatness, and the XY coil carrier 40 is placed on the magnetic plate 62 in a non-contact state via a plurality of (for example, four corners) air guides 68 for blowing out gas. ing. An X-axis drive coil 63X and a Y-axis drive coil 63Y constituting the first planar motor 64 are fixed to the bottom surface of the XY coil carrier 40.

  FIG. 5A is a plan view showing the wafer base 41 of FIG. In FIG. 5A, the surface of the magnetic plate 62 is composed of four magnet portions MA1, MA2, MA3, MA4 having a predetermined thickness and radially magnetized so as to intersect the X axis and the Y axis at 45 °. A magnetization pattern is formed in which the magnetization units MUA are two-dimensionally arranged in the X and Y directions with periods AX and AY, respectively. In this way, by using the magnetic plate 62 having the magnetization pattern formed on the surface, when the XY coil carrier 40 indicated by the two-dot chain line on the surface is driven by the first planar motor 64, the position is closer to the center of gravity. XY coil carrier 40 can be driven more stably.

  Instead of using the magnetization unit MUA, as shown in FIG. 5 (B), the perpendicularly magnetized magnetization comprising the magnet parts MC1 and MC3 magnetized in the + Z direction and the magnet parts MC2 and MC4 magnetized in the −Z direction. It is preferable to use a magnetization pattern in which the units MUC are arranged at a predetermined pitch in a direction crossing the X axis and the Y axis at 45 °. The magnetic plate 62 may be configured as an assembly of a large number of individual permanent magnets having the magnet portions MA1 to MA4 as a unit. Similar to the magnetic plate 34 in the wafer pack 28, the magnetic plate 62 is a magnetic material having a very low linear expansion coefficient at room temperature where the exposure apparatus EX of this example is installed, preferably linear expansion such as a super invar magnet. It is formed from a magnetic material with a rate of approximately zero. As a result, when the XY coil carrier 40 is driven by the magnetic force with respect to the magnetic plate 62, the wafer base 41 is not distorted even if the temperature of the magnetic plate 62 rises to some extent, and the XY coil carrier 40. Can be driven with high accuracy.

  5A, on the bottom surface of the XY coil carrier 40, for example, three phases for driving the XY coil carrier 40 in the X direction (non-scanning direction) according to the period of the magnetization pattern of the magnetic plate 62. A plurality of sets of X-axis drive coils 63X and, for example, three-phase Y-axis drive coils 63Y for driving the XY coil carrier 40 in the Y direction (scanning direction SD) are provided. In this case, the X-axis linear motors 64X and Y-axis are respectively determined from the drive coils 63X and 63Y and the magnetization pattern of the magnetic plate 62 (more precisely, the magnetic field distribution changing with the periods AX and AY in the X and Y directions). The linear motor 64Y is configured, and the first planar motor 64 is configured by the biaxial linear motors 64X and 64Y (see FIG. 2). Under the control of the stage control system 53, the linear motors 64X and 64Y drive the XY coil carrier 40 with respect to the wafer base 41 in a non-contact state in the X direction and the Y direction, respectively. Further, as can be seen from FIG. 5A, since the linear motors 64X and 64Y each have a plurality of axes, the XY coil carrier can be obtained by driving one linear motor 64X (or 64Y) by different driving amounts on the two axes. It is also possible to control the rotation angle θZ of 40. Instead of using the planar motor 64, a driving mechanism in which two one-dimensional linear motors whose driving directions are orthogonal to each other may be used.

  The detector 67A includes a Hall element or the like that detects a magnetic field (a magnetic field that changes in the X and Y directions with a period AX and AY) on the bottom surface of the XY coil carrier 40 on the magnetic plate 62 on the wafer base 41. And 67B are fixed. The detectors 67A and 67B detect relative positions in the X direction and Y direction of the XY coil carrier 40 with respect to the wafer base 41 (magnetic plate 62) with a resolution of about 10 μm. The rotation angle θZ of the XY coil carrier 40 is also obtained from these detection results. The detection results of the detectors 67A and 67B are also used for phase switching (commutation) of the X-axis and Y-axis drive coils 63X and 63Y.

  Since the detectors 67A and 67B are an incremental method, the origin detection patterns 65A and 65B are embedded at predetermined intervals in the X direction at the end portion in the + Y direction of the magnetic plate 62 in order to set the origin. Yes. Correspondingly, the absolute positions of the patterns 65A and 65B in the X and Y directions are set at the end of the bottom surface of the XY coil carrier 40 in the + Y direction at the same interval in the X direction as the patterns 65A and 65B. The origin sensors 66A and 66B such as an optical type or a capacitance type are fixed for detection within a range narrower than the periods AX and AY of the magnetization patterns. In this example, as an example, when the origin sensors 66A and 66B simultaneously detect the positions of the patterns 65A and 65B in the X direction and the Y direction, the magnetic fields detected by the detectors 67A and 67B become a predetermined phase. The X axis and Y axis measurement values of the detectors 67A and 67B are reset. Thereafter, the position of the XY coil carrier 40 detected by the detectors 67A and 67B can be regarded as an absolute position based on the patterns 65A and 65B on the wafer base 41. As described above, the two-dimensional relative position of the XY coil carrier 40 with respect to the wafer base 41 is measured including the patterns 65A and 65B, the origin sensors 66A and 66B, the magnetization pattern of the magnetic plate 62, and the detectors 67A and 67B. For this purpose, a first linear encoder is configured. The measurement value of the first linear encoder is supplied to the stage control system 53.

  FIG. 6A is a plan view showing the wafer pack 28, the XY coil carrier 40, and the wafer base 41 of FIG. As shown in FIG. 6 (A), the wafer pack with respect to the XY coil carrier 40 is formed on almost the entire upper surface of the XY coil carrier 40 according to the period of the magnetization pattern of the magnetic plate 34 in the wafer pack 28 of FIG. For example, a plurality of sets of three-phase X-axis drive coils 71X and Y-axis drive coils 71Y for driving 28 in the X direction (non-scanning direction) and the Y direction (scanning direction SD) are provided. Also in this case, the drive coils 71X and 71Y and the magnetization pattern of the magnetic plate 34 in FIG. 3 constitute the X-axis linear motor 72X and the Y-axis linear motor 72Y, respectively, and the 2-axis linear motors 72X and 72Y A second planar motor 72 is configured (see FIG. 2). Under the control of the stage control system 53 in FIG. 2, the linear motors 72X and 72Y drive the wafer pack 28 in the non-contact state in the X and Y directions with respect to the XY coil carrier 40, respectively. At this time, the position of the wafer pack 28 in the Z direction and the inclination angles θX and θY are controlled in a non-contact state by electrostatic suction and gas blowing by the electrostatic bearing member 37 of FIG.

  As can be seen from FIG. 6A, the linear motors 72X and 72Y each have a plurality of axes. Therefore, by driving one of the linear motors 72X (or 72Y) by different driving amounts on the two axes, the wafer pack 28 is provided. It is also possible to control the rotation angle θZ. As the planar motors 64 and / or 72, for example, a planar motor disclosed in US Pat. No. 6,437,463 may be used.

  As shown in FIG. 2, detectors 74 </ b> A and 74 </ b> B including Hall elements that detect the magnetic field of the magnetization pattern of the magnetic plate 34 in the wafer pack 28 are fixed on the upper surface of the XY coil carrier 40. The detectors 74A and 74B detect relative positions of the wafer pack 28 (magnetic plate 34) with respect to the XY coil carrier 40 in the X direction and Y direction with a resolution of about 10 μm. From these detection results, the rotation angle θZ of the wafer pack 28 with respect to the XY coil carrier 40 is also obtained. The detection results of the detectors 74A and 74B are also used for phase switching (commutation) of the drive coils 71X and 71Y.

  For the detectors 74A and 74B, an origin detection pattern 73B is fixed at the center of the bottom surface of the diaphragm 33 in order to set the origin. In the center of the upper surface of the XY coil carrier 40, an optical type for detecting the position of the pattern 73B in the X direction and the Y direction within a range narrower than the period BX, BY of the magnetization pattern of the magnetic plate 34 in FIG. An origin sensor 73A such as a capacitance type is fixed. Note that two sets of the origin sensor 73A and the pattern 73B are actually provided. As an example, when the magnetic field detected by the detectors 74A and 74B has a predetermined phase after the position of the pattern 73B is detected by the origin sensor 73A and the X-axis of the detectors 74A and 74B, Reset the Y axis measurement values. Thereafter, the position of the wafer pack 28 detected by the detectors 74A and 74B can be regarded as an absolute position based on the position where the pattern 73B is detected by the detector 74B. Thus, the second sensor for measuring the two-dimensional relative position of the wafer pack 28 with respect to the XY coil carrier 40 includes the origin sensor 73A, the pattern 73B, the magnetization pattern of the magnetic plate 34, and the detectors 74A and 74B. A linear encoder is configured. The measurement value of the second linear encoder is also supplied to the stage control system 53.

  However, in this example, the position of the wafer pack 28 in the X and Y directions and the rotation angle θZ are also measured by the laser interferometers 42X and 42Y in FIG. Therefore, by resetting or presetting the measurement values of the laser interferometers 42X and 42Y in a state where the wafer base 41 and the wafer pack 28 are in a predetermined positional relationship, the measurement values of the laser interferometers 42X and 42Y are thereafter obtained. By subtracting the measurement value (relative position of the XY coil carrier 40 with respect to the wafer base 41) of the first linear encoder including the detectors 67A and 67B of FIG. 5A from the (relative position of the wafer pack 28 with respect to the wafer base 41). The relative position of the wafer pack 28 with respect to the XY coil carrier 40 may be obtained. In this case, the origin sensor 73A and the pattern 74B on the upper surface side of the XY coil carrier 40 of FIG. 2 can be omitted.

  In the stage control system 53 of FIG. 1, the laser interferometers 42X and 42Y, the first linear encoder including the detectors 67A and 67B of FIG. 5A, and the second linear encoder including the detectors 74A and 74B of FIG. Based on the measured value and the control information from the main control system 51, the first planar motor 64 and the second planar motor 72 in FIG. 2 are driven. In this case, the positional relationship of the wafer pack 28 (wafer W) corresponding to the position of the reticle R in FIG. 1 is controlled based on the measured values of the laser interferometers 42X and 42Y, and the position of the XY coil carrier 40 is taken as an example. The wafer pack 28 is controlled so as to be positioned at the center of the XY coil carrier 40 as much as possible.

Next, an example of a method for driving the first planar motor 64 and the second planar motor 72 during scanning exposure and step movement will be described.
First, as shown in FIG. 6A, scanning is performed in which one shot area SA1 of the wafer W in the wafer pack 28 is moved in the + Y direction with respect to the projection area 21W of the projection optical system PL to expose the shot area SA1. At the time of exposure, the second planar motor 72 of FIG. 2 is driven to move the wafer pack 28 in the + Y direction indicated by the arrow A1 with respect to the XY coil carrier 40. In parallel with the operation, the stage control system 53 drives the first planar motor 64 of FIG. 2 to cancel the reaction force in the reverse direction against the XY coil carrier 40 due to the movement of the wafer pack 28 in the + Y direction. As described above, the XY coil carrier 40 is moved with respect to the wafer base 41 in the −Y direction indicated by the arrow A2. By this counter balance driving, the amount of vibration generated when scanning the wafer pack 28 can be made extremely small, and as a result, the overlay accuracy and the like can be improved.

When exposing a series of shot areas on the wafer W, the scanning direction of the wafer W is normally reversed alternately in the ± Y direction. For this reason, even if the counter balance driving is performed, the positional relationship between the wafer pack 28 and the XY coil carrier 40 does not gradually shift greatly.
Next, as shown in FIG. 6B, when the shot area SA2 on the wafer W is exposed to the shot area SA2 adjacent to the −X direction after the exposure, the irradiation of the exposure light IL is stopped and the wafer W is stopped. Must be stepped in the + X direction by the width of one shot area. For this purpose, the second planar motor 72 of FIG. 2 is driven to move the wafer pack 28 in the + X direction indicated by the arrow B1 with respect to the XY coil carrier 40. In the stage control system 53, slightly before the operation, the first planar motor 64 in FIG. 2 is driven, and the reaction force in the reverse direction against the XY coil carrier 40 due to the movement of the wafer pack 28 in the + X direction is generated. By generating a driving force exceeding that, the XY coil carrier 40 is moved relative to the wafer base 41 in the + X direction indicated by the arrow B2. At this time, the amount of movement of the wafer pack 28 in the + X direction with respect to the projection optical system PL is substantially the same as the amount of movement of the XY coil carrier 40 in the + X direction with respect to the projection optical system PL.

  Similarly, when stepping the wafer W in the Y direction, the stage control system 53 drives the XY coil carrier 40 in the same direction when driving the wafer pack 28. During step movement, even if some vibration is generated by driving the XY coil carrier 40, exposure accuracy is not affected. Further, by driving the wafer pack 28 and the XY coil carrier 40 in the same direction in this way, the relative position between the wafer pack 28 and the XY coil carrier 40 does not change before and after the step movement. It is possible to smoothly shift to the scanning exposure operation of the area SA2, and to increase the throughput of the exposure process.

Next, a wafer processing system for carrying in and out the wafer pack 28 with respect to the exposure apparatus EX of FIG.
FIG. 7 is a diagram showing a schematic configuration of the wafer processing system WT of this example. In FIG. 7, the wafer processing system WT is divided into a cassette station 80 for processing wafers and a portion for processing the wafer pack 28 of FIG.

  The cassette station 80 performs wafer heating, a cassette 82 for wafers, a cassette mounting table 81, a temperature control unit 83 for adjusting the temperature of the wafer, a bottom coating unit 84 for coating the wafer with an antireflection film, and the wafer. A heating unit 85, a high temperature heat treatment unit 86 for performing high temperature processing of the wafer, a high accuracy temperature adjusting unit 89 for performing high temperature adjustment of the wafer, a resist coating unit 90, a pre-baking unit 91, and a resist film thickness 4A to FIG. 4A, for example, a film thickness inspection unit 94 that performs the above-described inspection, a peripheral exposure unit 95 that performs peripheral exposure of the wafer, and a high-precision temperature adjustment unit 96 that performs high-precision temperature adjustment of the wafer. D) Wafer storage device 500 (high vacuum chamber and place for storing wafers W in wafer pack 28 in the order of D). A negative pressure includes a chamber) of the wafer W or wafer W is provided with a buffer cassette 97 for temporarily storing wafers pack 28 housed. The high temperature heat treatment unit 86 includes a high temperature heat treatment apparatus 87 and a temperature adjustment apparatus 88, and the pre-baking unit 91 includes a temperature adjustment / conveyance plate 92 and a hot plate 93.

  The cassette station 80 further includes the wafer pack 28 or the buffer cassette 98 for temporarily storing the wafer W carried out from the exposure apparatus EX, and the wafer pack 28 in the order of FIGS. 4D to 4A, for example. A wafer take-out device 520 that takes out the wafer W from the post-exposure baking unit 99, a high-precision temperature control unit 102, a developing unit 103, a temperature control / conveyance unit 104, and a heat treatment device 105. The post-exposure baking unit 99 includes a temperature control / conveyance device 100 and a heat treatment device 101.

  Further, the wafer pack processing part includes a wafer pack storage cassette 530 for storing the wafer pack 28 (where no wafer is stored), the airtightness of the wafer pack 28, and the plane of the constituent members of the wafer pack 28. The first wafer pack inspection station 540 for inspecting the presence or absence of foreign matter, the wafer pack temperature adjusting device 550 for adjusting the temperature of the wafer pack 28 to the temperature of the wafer, and the components of the wafer pack 28 from the wafer take-out device 520 A transfer system 600 including a transfer arm for unloading the wafer, a wafer pack cleaning machine 560 for cleaning the constituent members of the wafer pack 28, and a second wafer pack inspection for inspecting the flatness of the constituent members of the wafer pack 28 and the presence or absence of foreign matter. Station 570.

  In the wafer pack 28 of FIG. 3, the glass plate 29 (flat glass) is required to have a particularly high cleanliness, so the glass plate 29 and other members (frame 30 and diaphragm 33, etc.) are separated. May be processed. In this case, the glass plate 29 is processed in a processing system from the wafer pack cleaning machine 560 to the wafer pack storage cassette 530 and the wafer pack temperature control device 550, and other members include a transfer system 610 including a transfer arm, Other members may be processed by another processing system including a cleaning device 580 that performs cleaning in a dry environment and a storage cassette 590.

Next, the overall processing flow of the wafer and wafer pack 28 of this example will be described with reference to the flowcharts of FIGS. This process is controlled by a host computer (not shown), for example.
First, in step 202 of FIG. 8, in the cassette station 80 of FIG. 7, a wafer transfer system (not shown) accesses the cassette 82 on the cassette mounting table 81, and one unprocessed semiconductor wafer (from the cassette 82 ( Hereinafter, the wafer W is taken out. The cassette 82 contains semiconductor wafers before and after processing. In the next step 204, the shutter portion of the temperature control unit 83 is opened, and the wafer W is accommodated in the case of the temperature control unit 83 by the wafer transfer system, and on a temperature control plate (not shown) inside the case. Placed on. Thereafter, a predetermined first temperature adjustment process such as a cooling process is performed on the wafer W.

  In the next step 206, the wafer W is unloaded from the temperature control unit 83 and accommodated in the bottom coating unit 84. Here, an antireflection film is formed on the wafer W (film formation process). In the next step 208, the wafer W is unloaded from the bottom coating unit 84 and accommodated in the heating unit 85. Then, the wafer W is subjected to heat treatment as a pre-stage of the first heat treatment. Thereafter, in step 210, the wafer W is unloaded from the heating unit 85 and accommodated in the high temperature heat treatment unit 86. Then, the high-temperature heat treatment apparatus 87 provided in the high-temperature heat treatment unit 86 performs the heat treatment as a subsequent stage of the first heat treatment on the wafer W for a predetermined time. The temperature of the heat treatment at the later stage of the first heat treatment is set higher than the temperature at the earlier stage of the first heat treatment.

  In the next step 212, the wafer W moves from the high temperature heat treatment apparatus 87 to the temperature adjustment apparatus 88. The temperature adjustment device 88 adjusts the temperature of the wafer W to a predetermined temperature. In the next step 214, the wafer W is unloaded from the high temperature heat treatment unit 86 and accommodated in the high accuracy temperature control unit 89. Then, a second temperature adjustment process is performed on the wafer W at a predetermined temperature (for example, 23 ° C.). In the next step 216, the wafer W is unloaded from the high precision temperature control unit 89 and accommodated in the resist coating unit 90. Then, a desired resist solution is applied to the wafer W. As a result, a resist film is formed on the surface of the wafer W.

  In the next step 218, the wafer W is unloaded from the resist coating unit 90 and accommodated in the pre-baking unit 91. Then, the wafer W is placed in a temperature control / transfer plate 92 provided in the pre-baking unit 91. Then, the wafer W is transferred while being controlled by the temperature control / transfer plate 92 and transferred to a hot plate 93 provided in the pre-baking unit 80. In step 220, the second heat treatment is performed on the wafer W at a predetermined temperature and time. By this heat treatment, the residual solvent remaining in the resist solution coating process is removed by evaporation from the wafer W coating film.

  In the next step 222, the wafer W is transferred from the hot plate 93 to the temperature control / transfer plate 92. The temperature control / transfer plate 92 transfers the wafer W while adjusting the temperature. The set temperature and time for temperature adjustment are appropriately set. For example, the set temperature in step 222 is set lower than the set temperature in the second heat treatment in step 220.

  When this temperature adjustment is completed, in step 224, the wafer W is unloaded from the pre-baking unit 91 and moved to the film thickness inspection unit 94. Then, the film thickness of the resist formed on the wafer W is inspected. Further, for example, the presence or absence of foreign matters such as particles and the state of the wafer surface may be inspected. In the next step 226, the wafer W is moved from the film thickness inspection unit 94 to the peripheral exposure unit 95. Then, peripheral portion exposure processing is performed on the wafer W. In the next step 228, the wafer W is transferred to the high-precision temperature control unit 96, where a third temperature control process for controlling the temperature of the wafer W to the temperature at the time of exposure with high accuracy is performed.

  In the next step 230, the wafer W is transferred to the wafer storage device 500 of FIG. At this time, the constituent members of the wafer pack 28 controlled to the same temperature as the wafer W in step 306 of FIG. Then, the wafers W are stored in the wafer pack 28 in the order of FIGS. 4 (A) to 4 (D). At this time, the space in the wafer pack 28 is set to a predetermined negative pressure as described above. After the wafer W is stored in the wafer pack 28, the wafer W and the wafer pack 28 (especially the glass plate 29) may be left for a predetermined time until the next exposure process in order to acclimatize the wafer W and the wafer pack 28 (particularly the glass plate 29). .

  In the next step 232 in FIG. 8, the wafer pack 28 containing the wafer W is transported to the exposure apparatus EX in FIG. 1 for exposure processing. Note that the wafer W (wafer pack 28) may be temporarily stored in the buffer cassette 97 before the wafer pack 28 is delivered to the exposure apparatus EX. When the exposure process on the wafer W in the wafer pack 28 is completed, the process proceeds to step 234, and the wafer pack 28 is carried out from the exposure apparatus EX to the wafer take-out apparatus 520. Then, the wafer W is taken out from the wafer pack 28 in the order shown in FIGS. 4D to 4A. If it is not easy to separate the glass plate 29 and the wafer W, the glass plate 29 (flat glass) and the wafer W are further separated in step 236. The components of the wafer pack 28 separated from the wafer W in step 234 or 236 are transferred to step 308 in FIG.

  Then, the wafer W taken out from the wafer pack 28 in step 234 or 236 (separated from the glass plate 29) is transferred to the post-exposure baking unit 99 from the wafer take-out device 520 in step 238 in FIG. The Note that the wafer W or the wafer pack 28 containing the wafer W may be temporarily stored in the buffer cassette 97 after the exposure processing is completed.

  The wafer W is then placed on a temperature control / transfer apparatus 100 provided in the post-exposure baking unit 99. In the next step 240, the wafer W is transferred while being controlled in temperature by the temperature control / transfer apparatus 100, and is transferred to the heat treatment procedure 101 in the post-exposure baking unit 99. The heat treatment apparatus 101 performs a third heat treatment on the wafer W.

In the next step 242, the wafer W is returned from the heat treatment apparatus 101 to the temperature control / transfer apparatus 100 and transferred to the high-precision temperature control unit 102 while being adjusted to a predetermined temperature. In step 244, the high-precision temperature control unit 102 performs a fourth temperature control process, which is a temperature control process at a predetermined temperature (for example, 23 ° C.), on the wafer W.
In the next step 246, the wafer W is transferred from the high-precision temperature control unit 102 to the developing unit 103. In the developing unit 102, a developing solution is applied to the wafer W, and the developing process is performed by leaving the wafer W for a predetermined time. proceed. Thereafter, a rinse solution is supplied onto the wafer W to wash away the developer, and the wafer W is dried. In the next step 248, the wafer W is transferred from the developing unit 103 to the temperature adjustment / conveyance device 104. And the temperature control process with respect to the wafer W is performed.

  In the next step 250, the wafer W is transferred from the temperature adjustment / transfer apparatus 102 to the heat treatment apparatus 105, and the fourth heat treatment is performed on the wafer W by the heat treatment apparatus 105. Thereafter, in step 252, the wafer W is returned from the heat treatment apparatus 105 to the temperature adjustment / transfer apparatus 104 and transferred while being adjusted to a predetermined temperature. Including the aforementioned fourth heat treatment, the resist expanded by development is cured by these treatments, so that the resistance to chemicals is improved. Thereafter, in step 254, the wafer W is returned from the temperature control / conveyance device 104 to the cassette 82 of the cassette station 80, and proceeds to the next step. It should be noted that before the wafer W is returned to the cassette 82, processing irregularities or the like on the wafer W may be inspected by a macro inspection device or the like. In addition to inspection, inspections such as pattern defects after development, line width, overlay, and overlay accuracy may be performed. Furthermore, the etching process may be performed by an etching apparatus under predetermined conditions.

  Next, with reference to FIG. 10, the flow of processing of the constituent members of the wafer pack 28 will be described. First, in step 302 of FIG. 10, one wafer pack 28 (however, the wafer W is not accommodated) is taken out from the wafer pack storage cassette 530 of FIG. Wafer pack storage cassette 530 accommodates a plurality of wafer packs 28. In the next step 304, the taken wafer pack 28 is transferred to the first wafer pack inspection station 540. In the first wafer pack inspection station 540, the sealing degree (air tightness) of the wafer pack 28 and the flatness of the glass plate 29 (flat glass) that comes into contact with the exposure surface of the wafer W are inspected. In addition, it is also inspected whether or not foreign substances such as resist residues and dust adhere to the glass plate 29. This can be inspected by an inspection device such as scanning the glass plate 29 with a laser beam and detecting a portion where the reflected light becomes scattered light.

When foreign matter exceeding the allowable range is detected, the wafer pack 28 (or the glass plate 29 alone) is transferred to a wafer pack cleaning machine 560, which will be described later, via the transfer system 600 as an example, and cleaned. Furthermore, when the airtightness of the wafer pack 28 or the flatness of the glass plate 29 exceeds an allowable range, replacement with another wafer pack or glass plate is performed.
In the next step 306, the wafer pack 28 is transferred to the wafer pack temperature adjustment device 550, where the temperature of the wafer pack 28, particularly the temperature of the glass plate 29, is the temperature of the wafer W to be stored ( The temperature is set to be substantially equal to the temperature set in step 228 in FIG. That is, the temperature of the wafer pack 28 is adjusted so as to be the same temperature as the wafer W on which the predetermined third temperature adjustment process has been performed by the high-precision temperature adjustment unit 96 of FIG.

  Next, the process proceeds to step 230 in FIG. 8, and the wafer pack 28 is transferred to the wafer storage device 500 in FIG. 7, and the wafer W is stored in the wafer pack 28. After the wafer W is exposed (step 232) and the wafer W is taken out from the wafer pack 28 (steps 234 and 236) as described above, the constituent members of the wafer pack 28 separated from the wafer W are: The process proceeds to step 308 in FIG. 10 and is transferred to the wafer pack cleaning machine 560. Then, the wafer pack cleaner 560 cleans the wafer pack 28 with a predetermined liquid and dries it. The drying process may be omitted without using liquid. Further, since the glass plate 29 (flat glass) of the wafer pack 28 is in contact with the resist coating surface of the wafer W, there is a possibility that foreign matters such as resist residues are attached.

  Therefore, only the glass plate 29 may be subjected to high-level cleaning using an organic solvent or the like, and the other frames 30 and the like of the wafer pack 28 in FIG. 3 may be cleaned only by air shower or the like. By this cleaning process, the glass plate 29 can also be maintained at a required degree of cleaning. In the next step 310, the components of the wafer pack 28 are transported to the second wafer pack inspection station 570, where the sealing degree (air tightness) of the wafer pack 28 and the exposure surface of the wafer W are exposed. The flatness of the glass plate 29 that will come into contact with is inspected. In addition, it is also inspected whether or not foreign substances such as resist residues and dust adhere to the glass plate 29. When foreign matter exceeding the allowable range is detected, the wafer pack 28 (or the glass plate 29 alone) is returned to the wafer pack cleaning machine 560 and cleaned again. Further, when the airtightness of the wafer pack 28 or the flatness of the glass plate 29 exceeds an allowable range, replacement with another wafer pack 28 or the like is performed.

Note that the processing at the second wafer pack inspection station 570 is the same as the inspection processing at the first wafer pack inspection station 540, and therefore the same inspection is performed at the first wafer pack inspection station 540 and the second wafer pack inspection station 570. It may be a station.
In the next step 312, the inspection process at the second wafer pack inspection station 570 is completed, and the wafer pack 28 having no abnormality is returned to the wafer pack storage cassette 530 and used in the next exposure process in step 314. Stored. That is, the constituent members of the wafer pack 28 of this example are repeatedly used for a plurality of wafers.

Next, various methods for separating the glass plate 29 (flat plate glass) of the wafer pack 28 and the wafer W in step 236 of FIG. 8 will be described.
First, as shown in FIG. 11A, the first separation method is a direction in which the glass plate 29 and the wafer W are sucked by the vacuum pads 110 and 111 for performing vacuum suction and separated from the vacuum pads 110 and 111. With the above force applied, warm air is blown from the heating device 130 to warm the glass plate 29 and the wafer W as a whole. In this example, since the linear expansion coefficient of the glass plate 29 is smaller than that of the wafer W, when heated to the same temperature, the wafer W is elongated longer and the interface between the glass plate 29 and the wafer W is easily peeled off. Therefore, the glass plate 29 and the wafer W can be separated by the vacuum pads 110 and 111.

  Next, while FIG. 11A warms the whole, the second separation method shown in FIG. 11B attaches the heating plates 112A and 112B to the vacuum pad 111 on the wafer W side, Only the wafer W side is heated. Accordingly, the wafer W is stretched and the interface is easily peeled off, so that the glass plate 29 and the wafer W can be easily separated. This method can be applied even if the glass plate 29 and the wafer W have the same linear expansion coefficient (however, they need to be thermally expanded to some extent). Further, in the case of FIG. 11B, the temperature of only the wafer W rises. However, in the case of the wafer W, heat treatment is performed in the post-exposure baking unit 99 of FIG. There is an advantage that there is no problem.

  Next, as shown in FIG. 11C, in the third separation method, a plurality of locations on the back surface of the vacuum pad 113 are obtained with the vacuum pad 113 having flexibility attached to the back surface of the wafer W. The vacuum pads 111A and 111B that are independently driven in the vertical direction are attracted and the vacuum pads 111A and 111B are slightly displaced or vibrated by different amounts in the vertical direction. As a result, the wafer W is bent slightly, the interface is extended, and the wafer W is easily peeled off from the glass plate 29.

  Next, in the fourth separation method, as shown in FIG. 12A, the glass plate 29 and the wafer W are adsorbed by the vacuum pads 110 and 111 for performing vacuum adsorption, and the glass plate 29 and the wafer W are separated. Clean air 116 is blown from the compressor 114 through the nozzle 115 into the interface. Since the wafer W usually has a notch Wa that is a notch, the air 116 is blown into the notch Wa so that the interface is easily peeled off and the wafer W can be easily separated from the glass plate 29. Become.

Instead of blowing air to the interface, for example, a liquid (pure water or the like) that does not affect the resist characteristics may be sprayed, or a mixture of liquid and gas may be sprayed. It is also possible to spray a resist developer.
Next, as shown in FIG. 12B, the fifth separation method is to suck the glass plate 29 and the wafer W with the vacuum pads 110 and 111 for performing vacuum suction, and place them on the vacuum pads 110 and 111, respectively. For example, the ultrasonic transducers 120A, 120B and 120C, 120D are attached, and the glass plate 29 and the wafer W are vibrated from the ultrasonic transducers 120A to 120D. At this time, by vibrating at the natural frequency (mode resonance point) of the glass plate 29 and the wafer W, both are easily peeled off.

  Next, as shown in FIG. 12C, the sixth separation method is such that the electrode members 121 and 122 for electrostatic adsorption are brought into close contact with the glass plate 29 and the wafer W, and the electrode members 121 and 122 are brought into contact with each other. In this method, electrostatic potentials that repel each other (for example, both + or-) are applied. As a result, a repulsive force acts between the glass plate 29 and the wafer W and can be easily peeled off.

In addition, you may use combining the several method of said 1st-6th isolation | separation methods, By this, the glass plate 29 and the wafer W can be isolate | separated further easily.
The effect of this embodiment is as follows.
(1) The wafer processing system WT of FIG. 7 is a wafer processing system in which exposure is performed in a state where a glass plate 29 (flat plate member) that transmits exposure light is in close contact with the surface. A wafer storage device 500 that is assembled in close contact with the surface of the wafer, an exposure device EX that exposes the wafer W with exposure light through the glass plate 29, and a wafer take-out device 520 that separates the wafer W and the glass plate 29. I have.

The processing method by the wafer processing system WT is a wafer processing method in which exposure is performed in a state where the glass plate 29 is in close contact with the surface. And step 232 (exposure process) for exposing the wafer through the glass plate 29 with exposure light, and step 236 (separation process) for separating the wafer and the glass plate 29.
Accordingly, since the flatness during exposure of the wafer W to be exposed can be maintained high, the pattern image of the reticle R can be exposed to each shot area on the wafer W with high accuracy. Further, the glass plate 29 and the wafer W are combined immediately before the wafer W is loaded into the exposure apparatus EX, and the glass plate 29 and the wafer W are separated immediately after the exposure of the exposure apparatus EX. Thus, the wafer W can be smoothly transferred between the exposure apparatus EX and the other resist coating apparatus 90, the developing unit 103, and the like.

(2) Further, a transport system 600 or the like for transporting the glass plate 29 is provided. For example, the glass plate 29 is transported to the wafer pack cleaning machine 560 in a part of step 304 (transport process). Thereby, the glass plate 29 can be repeatedly used with respect to another wafer of exposure object. Therefore, the operation cost of the substrate processing system can be reduced.
(3) Further, in order to match the temperatures of the glass plate 29 and the wafer W, the high-precision temperature control unit 96 that controls the temperature of the wafer W and the wafer pack temperature control that controls the temperature of the glass plate 29 (wafer pack 28). A device 550 is provided. Therefore, the temperature of the wafer W can be maintained at the target temperature. The wafer W undergoes various heat treatments, so that the temperature fluctuates, whereas the glass plate 29 undergoes little heat treatment. Therefore, when the glass plate 29 is installed in an environment controlled to the temperature at the time of exposure in the exposure apparatus EX, for example, it is not necessary to provide a temperature adjusting device for the glass plate 29 in particular.

(4) Further, a wafer pack cleaning machine 560 for cleaning the glass plate 29 and other components of the wafer pack 28 is provided. Therefore, even if resist residue or the like adheres to the glass plate 29, the glass plate 29 can be used repeatedly by washing it.
(5) In addition, an inspection device (a part of the first wafer pack inspection station 540) for inspecting the presence or absence of foreign matter adhering to the glass plate 29 is provided. Therefore, when a foreign object is detected, it is possible to prevent unnecessary patterns from being transferred to the wafer W by performing cleaning or the like.

(6) Further, an inspection device (a part of the first wafer pack inspection station 540) for inspecting the flatness of the glass plate 29 is provided. Therefore, it is possible to prevent the exposed surface of the wafer W being exposed from being bent beyond the allowable range.
(7) Further, the wafer storage device 500 of FIG. 7 includes, for example, a wafer transfer arm 45 for bringing the glass plate 29 into close contact with the surface of the wafer W and the frame 30 as shown in FIGS. 4 (A) to 4 (D). And the transfer arm 43 (see FIG. 3) for biasing the wafer W to the glass plate 29 using the diaphragm 33 (box-shaped member), and the space in which the frame 30, the glass plate 29, and the wafer W are stored is set to a negative pressure. The wafer take-out apparatus 520 shown in FIG. 7 includes a support member 44 that sucks and holds the glass plate 29 and a valve of the exhaust pipe 31 for introducing gas into the box-like member. 31a, a pipe for supplying gas (exhaust pipe 31), a transfer arm 43 (see FIG. 3) for holding the box-shaped member in order to separate the box-shaped member from the glass plate 29, and the glass plate 29 From wafer W To separate, and a wafer transfer arm 45 for attracting and holding the wafer W.

Therefore, the frame 30 and the diaphragm 33 shown in FIG. 3 are provided, and the wafer pack 28 that can store the wafer W in the sealed space surrounded by the glass plate 29, the frame 30, and the diaphragm 33 is easily assembled and disassembled. Can do.
(8) In FIG. 7, the transport system of the wafer pack 28 transports the transport system 600 for transporting the glass plate 29 and the constituent members of the wafer pack 28 other than the glass plate 29 through a path different from that of the glass plate 29. And a transport system 610 to be provided. Since the glass plate 29 and the other constituent members have different shapes and different amounts of foreign matter, the processing throughput can be improved by processing the two through different paths.

(9) The wafer pack 28 in FIG. 3 has a magnetic plate 34 on the diaphragm 33, and the exposure apparatus EX includes a planar motor 72 that drives the wafer W through the magnetic plate 34. Therefore, the wafer pack 28 can be driven.
[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 13 shows the main part of the exposure apparatus in which the glass plate 29 to which the wafer W is in close contact is directly fixed to the stage. In FIG. 13, an XY stage 9 is mounted on a flat plate 8 below the projection optical system PL so as to be movable in the X and Y directions via a gas bearing. On the XY stage 9, for example, a voice coil The Z stage 10 is supported via three Z drive units 11A, 11B, and 11C driven in the Z direction by a motor system or the like. The XY stage 9 is driven in the X and Y directions orthogonal to each other by two sets of linear motors, for example, along a guide mechanism (not shown). A laser beam is irradiated from a laser interferometer (not shown) to the reflecting surface (or moving mirror) on the side surface in the X direction and Y direction of the Z stage 10, and at least the position of the Z stage 10 in the X direction and Y direction is irradiated by the laser interferometer. , Rotation angle θZ, and the like are measured.

  Then, the glass plate 29 is detachably held on the upper surface of the Z stage 10 via two support members 12A and 12B separated in the Y direction, and the surface of the wafer W (a photoresist is applied) on the bottom surface 29a of the glass plate 29. The entire exposed surface) is in close contact. In this case, suction holes 12Aa, 12Ba and the like connected to a vacuum pump (not shown) are formed in the support members 12A and 12B, and the glass plate 29 is vacuum-sucked on the support members 12A and 12B by the suction holes 12Aa and 12Ba. Is held in a manner.

  In addition, flat electrode plates 14A and 14B are disposed at upper portions of the support members 12A and 12B via the connecting members 13A and 13B at predetermined intervals on the upper surface of the glass plate 29 so as to be retractable. , 14B is configured to be able to hold the wafer W on the bottom surface of the glass plate 29 by electrostatic attraction by applying a predetermined charge (or potential) from a control device (not shown). Further, by controlling the focus position and the like of the Z stage 10 via the Z drive units 11A, 11B, and 11C based on the focus position and the like of the surface of the wafer W measured via an AF sensor (not shown), the wafer The surface of W can be focused on the image plane of the projection optical system PL.

  In this example, the unexposed wafer W and the glass plate 29 are brought into close contact with the wafer storage device 500 of FIG. Thereafter, the glass plate 29 and the wafer W are transferred between the support members 12A and 12B in FIG. 13 while being placed on the wafer transfer arm 15 as an example. The electrode plates 14A and 14B are retracted. Next, the wafer transfer arm 15 is gradually lowered, the bottom surface of the glass plate 29 is placed on the upper surface of the support members 12A and 12B, and the electrode plates 14A and 14B are returned to charge positive or negative charges. The wafer W is attracted and held stably on the glass plate 29. Thereafter, the position of the Z stage 10 (wafer W) is measured by a laser interferometer (not shown), and the XY stage 9 is driven based on the measured value, whereby the glass plate 29 is exposed with the exposure light IL from the projection optical system PL. The wafer W is exposed via Thereafter, the wafer transfer arm 15 is disposed on the back surface of the wafer W, for example, the charging of the electrode plates 14A and 14B is released and retracted, and then the vacuum suction of the support members 12A and 12B is released, and the wafer transfer arm is released. By raising 15, the glass plate 29 and the wafer W can be carried out. The unloaded glass plate 29 and the wafer W are separated by, for example, the wafer take-out device 520 in FIG.

  In the exposure apparatus of FIG. 13 as well, since the wafer W is held such that the surface of the wafer W is in close contact with the bottom surface of the glass plate 29, the structure of the Z stage 10 can be simplified and the flatness of the back surface of the wafer W can be simplified. The wafer W can be exposed in a state where the surface of the wafer W is maintained at a high flatness without being affected by the above. Accordingly, a reticle pattern (not shown) is exposed to each shot area of the wafer W with high accuracy via the projection optical system PL. Further, by using the wafer processing system WT shown in FIG. 7, the wafer W and the glass plate 29 can be processed efficiently.

The exposure apparatus of the above-described embodiment includes an illumination optical system and a projection optical system that are composed of a plurality of lenses, and a reticle stage or wafer drive apparatus that includes a large number of mechanical parts by incorporating optical adjustment into the exposure apparatus body. Is attached to the exposure apparatus main body, wiring and piping are connected, and further comprehensive adjustment (electrical adjustment, operation check, etc.) is performed. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
In addition, the wafer processing system of the above-described embodiment can be assembled using the exposure apparatus and various subsystems including the other constituent elements recited in the claims of the present application.

The present invention can be similarly applied not only to exposure with a scanning exposure type projection exposure apparatus but also with a batch exposure type projection exposure apparatus.
In the above-described embodiment, a light-transmitting reticle in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used, but instead of this reticle, for example, As disclosed in US Pat. No. 6,778,257, an electronic mask that forms a transmissive pattern, a reflective pattern, or a light emitting pattern based on electronic data of a pattern to be exposed may be used.

  In the above-described embodiment, the substrate is exposed by projecting a pattern image onto the wafer W using the projection optical system PL. However, as disclosed in International Publication No. 2001/035168 pamphlet. The present invention can also be applied to an exposure apparatus (lithography system) that exposes lines and spaces on the wafer W by forming interference fringes on the wafer W. In this case, the projection optical system PL need not be used, and the diffraction grating for forming the interference fringes can be regarded as an optical member.

  Further, when a semiconductor device is manufactured using the exposure apparatus of the above-described embodiment, the semiconductor device includes a step of designing a function and performance of the device, a step of manufacturing a reticle based on this step, and a wafer from a silicon material. A substrate processing step including a step of forming, a step of exposing a reticle pattern to the substrate (wafer) by the exposure apparatus of the above-described embodiment, a step of developing the exposed substrate, a heating (curing) of the developed substrate, and an etching step The device is manufactured through a device assembly step (including a dicing process, a bonding process, and a packaging process) and an inspection step.

  Further, the present invention is not limited to application to a semiconductor device manufacturing process, for example, a manufacturing process of a display device such as a liquid crystal display element formed on a rectangular glass plate or a plasma display or an imaging The present invention can be widely applied to manufacturing processes of various devices such as devices (CCD, etc.), micromachines, MEMS (Microelectromechanical Systems), ceramic wafers, etc. as thin film magnetic heads and DNA chips. Furthermore, the present invention can also be applied to a manufacturing process when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithography process.

The various U.S. patents and US patent application publications listed in this specification are part of the text, with the exception of those that are specifically indicated for use, with the disclosure of those to the extent permitted by the laws of the designated or selected countries. And
In addition, this invention is not limited to the above-mentioned embodiment, Of course, a various structure can be taken in the range which does not deviate from the summary of this invention. In addition, the entire disclosure of Japanese Patent Application No. 2007-110180 filed on April 19, 2007, including the specification, claims, drawings, and abstract, is incorporated herein by reference in its entirety. .

Claims (32)

A substrate processing method in which exposure is performed in a state where a flat plate member that transmits exposure light is in close contact with the surface,
An assembly step of bringing the flat plate member into close contact with the surface of the substrate to be exposed;
An exposure step of exposing the substrate through the flat plate member with exposure light;
A separation step of separating the substrate and the flat plate member;
A substrate processing method comprising:   The substrate processing method according to claim 1, further comprising a transporting step of transporting the flat plate member in order to repeatedly use the flat plate member on another substrate to be exposed.   The substrate processing method according to claim 1, further comprising a step of adjusting a temperature of the flat plate member and the substrate before the flat plate member is brought into close contact with the surface of the substrate.   The substrate processing method according to claim 1, further comprising a step of cleaning the flat plate member.   The substrate processing method as described in any one of Claim 1 to 6 further equipped with the process of test | inspecting the presence or absence of the foreign material adhering to the said flat member.   The substrate processing method as described in any one of Claim 1 to 5 further equipped with the process of test | inspecting the information regarding the flatness of the said flat member. There is a predetermined linear expansion coefficient difference between the substrate and the flat plate member,
The said isolation | separation process includes the process of heating the said board | substrate and the said flat plate member simultaneously in order to displace the said board | substrate and the said flat plate member relatively by thermal expansion. Substrate processing method.   The separation step includes a step of partially heating at least one of the substrate and the flat plate member in order to relatively displace the substrate and the flat plate member by thermal expansion. The substrate processing method according to one item.   The substrate separation method according to claim 1, wherein the separation step includes a step of bending the substrate in a state where the back surface of the substrate is vacuum-sucked.   The separation step includes a step of injecting a gas, a liquid, or a mixture of a gas and a liquid into a boundary portion between the flat plate member and the substrate in a state where the back surface of the substrate is adsorbed. The substrate processing method as described in any one of Claims.   The substrate separation method according to claim 1, wherein the separation step includes a step of vibrating at least one of the flat plate member and the substrate.   7. The substrate processing method according to claim 1, wherein the separating step includes a step of imparting an electrostatic potential to the flat plate member and the substrate so as to repel each other. The assembly process includes
Adhering the flat plate member to the surface of the substrate;
Urging the substrate against the flat plate member using a box-shaped member;
Including air-tightening the inside of the box-shaped member,
The separation step includes
Introducing a gas into the box-shaped member;
Separating the box-shaped member from the plate-shaped member;
The substrate processing method as described in any one of Claim 1 to 12 including the process of isolate | separating the said board | substrate from the said flat member. The conveying step is
Conveying the flat plate member;
The substrate processing according to claim 2, further comprising a step of transporting the box-shaped member through a path different from the flat plate-like member in order to repeatedly use the box-shaped member with respect to another substrate to be exposed. Method. A magnetic body having a predetermined polarity distribution is provided at the bottom of the box-shaped member,
15. The substrate processing method according to claim 13, wherein the exposure step includes a step of driving the substrate through the magnetic body. A substrate processing system in which exposure is performed in a state where a flat plate member that transmits exposure light is in close contact with the surface,
An assembly part for bringing the flat plate member into close contact with the surface of the substrate to be exposed;
An exposure unit that exposes the substrate through the flat plate member with exposure light;
A separation portion for separating the substrate and the flat plate member;
A substrate processing system comprising:   The substrate processing system according to claim 16, further comprising a transport unit configured to transport the flat plate member, wherein the flat plate member is repeatedly used with respect to another substrate to be exposed.   17. At least one of a first temperature control unit that controls the temperature of the substrate and a second temperature control unit that controls the temperature of the plate member to match the temperatures of the plate member and the substrate is included. Or the substrate processing system according to 17.   The substrate processing system according to claim 16, further comprising a cleaning unit that cleans the flat plate member.   The substrate processing system according to any one of claims 16 to 19, further comprising a first inspection unit that inspects for the presence or absence of foreign matter adhering to the flat plate member.   21. The substrate processing system according to any one of claims 16 to 20, further comprising a second inspection unit that inspects information relating to flatness of the flat plate member. There is a predetermined linear expansion coefficient difference between the substrate and the flat plate member,
The separation part includes a heating part that simultaneously heats the substrate and the flat plate member to relatively displace the substrate and the flat plate member by thermal expansion. The substrate processing system as described.   The separation unit includes a heating unit that partially heats at least one of the substrate and the flat plate member in order to relatively displace the substrate and the flat plate member by thermal expansion. The substrate processing system according to claim 1.   The substrate processing system according to any one of claims 16 to 21, wherein the separation unit includes a suction unit that vacuum-sucks the back surface of the substrate, and a drive unit that deflects the substrate.   The separation unit includes an adsorption unit that adsorbs the back surface of the substrate, and an injection unit that injects gas, liquid, or a mixture of gas and liquid into a boundary portion between the flat plate member and the substrate. The substrate processing system as described in any one of 21.   The substrate processing system according to any one of claims 16 to 21, wherein the separation unit includes a vibration unit that vibrates at least one of the flat plate member and the substrate.   The substrate processing system according to any one of claims 16 to 21, wherein the separation unit includes an electrostatic control unit that applies an electrostatic potential to the flat plate member and the substrate so as to repel each other. The assembly part is
A substrate holding part for bringing the flat plate member into close contact with the surface of the substrate;
A box-shaped member holding portion for biasing the substrate to the flat plate-shaped member using a box-shaped member;
The box-shaped member, the flat plate-shaped member, and an airtight chamber that sets a space in which the substrate is stored to a negative pressure,
The separation unit is
A first holding part for sucking and holding the flat plate member;
A gas supply unit for introducing gas into the box-shaped member;
A second holding portion for holding the box-shaped member in order to separate the box-shaped member from the flat plate-shaped member;
The substrate processing system according to any one of claims 16 to 27, further comprising a third holding unit that holds the substrate by suction in order to separate the substrate from the flat plate member. The transport unit is
A first transport unit for transporting the flat plate member;
18. A second transport unit that transports the box-shaped member along a path different from the flat plate-shaped member in order to repeatedly use the box-shaped member for another substrate to be exposed. Substrate processing system. A magnetic body having a predetermined polarity distribution is provided at the bottom of the box-shaped member,
30. The substrate processing system according to claim 28, wherein the exposure unit includes a drive mechanism that drives the substrate via the magnetic body. In a device manufacturing method including a lithography process,
A device manufacturing method using the substrate processing method according to claim 1 in the lithography process. In a device manufacturing method including a lithography process,
31. A device manufacturing method using the substrate processing system according to any one of claims 16 to 30 in the lithography process.

Images