JPS6457643U - - Google Patents

Info

Publication number
JPS6457643U
JPS6457643U JP1987150142U JP15014287U JPS6457643U JP S6457643 U JPS6457643 U JP S6457643U JP 1987150142 U JP1987150142 U JP 1987150142U JP 15014287 U JP15014287 U JP 15014287U JP S6457643 U JPS6457643 U JP S6457643U
Authority
JP
Japan
Prior art keywords
bumps
integrated circuit
simulated
mounting structure
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987150142U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987150142U priority Critical patent/JPS6457643U/ja
Publication of JPS6457643U publication Critical patent/JPS6457643U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図から第3図までが本考案に関し、第1図
は本考案による半導体集積回路チツプの実装構造
の一実施例における半導体チツプと配線基板の平
面図および半導体チツプの実装後の状態を示す側
面図、第2図および第3図は接続バンプと模擬バ
ンプとのそれぞれ異なる態様を示す半導体チツプ
の一部拡大断面図である。第4図は従来技術によ
るフリツプチツプの実装の模様を示す模式図、第
5図はバンプを半導体チツプの中央部に集中配置
した場合の実装の模式図、第6図および第7図は
第5図の実装構造の場合に生じうる傾きと沈み込
みの模様をそれぞれ示す模式図である。図におい
て、 1:半導体チツプの基板、2,4:絶縁膜、3
:集積回路の接続用接続膜、5:接続バンプ用接
続膜、6:模擬バンプ用下地膜、7:保護膜、1
0:半導体チツプないしはフリツプチツプ、11
:半導体チツプの集積回路部分、12:集積回路
の接続バンプとの接続点、13:接続パツド、2
0:接続バンプ、30:模擬バンプ、40:配線
基板、50:配線導体、51:配線導体の接続バ
ンプとの接続点、60,61,62:模擬接続点
、D1:接続不良欠陥、D2:配線導体間短絡欠
陥、δ:半導体チツプと配線基板との間隔、L:
熱応力の掛かる寸法、θ:半導体チツプの傾き角
度、W:半導体チツプの重さ、である。
Figures 1 to 3 relate to the present invention, and Figure 1 shows a plan view of a semiconductor chip and a wiring board in an embodiment of a mounting structure for a semiconductor integrated circuit chip according to the present invention, and a state after mounting the semiconductor chip. The side view, FIGS. 2 and 3 are partially enlarged sectional views of the semiconductor chip showing different aspects of connection bumps and simulated bumps, respectively. Fig. 4 is a schematic diagram showing the mounting pattern of a flip chip according to the prior art, Fig. 5 is a schematic diagram of mounting when bumps are concentrated in the center of the semiconductor chip, and Figs. FIG. 3 is a schematic diagram showing patterns of inclination and depression that may occur in the case of the mounting structure of FIG. In the figure, 1: semiconductor chip substrate, 2, 4: insulating film, 3
: Connection film for connection of integrated circuit, 5: Connection film for connection bump, 6: Base film for simulated bump, 7: Protective film, 1
0: Semiconductor chip or flip chip, 11
: Integrated circuit part of semiconductor chip, 12: Connection point with connection bump of integrated circuit, 13: Connection pad, 2
0: Connection bump, 30: Simulated bump, 40: Wiring board, 50: Wiring conductor, 51: Connection point of wiring conductor with connection bump, 60, 61, 62: Simulated connection point, D1: Poor connection defect, D2: Short-circuit defect between wiring conductors, δ: Distance between semiconductor chip and wiring board, L:
The dimensions to which thermal stress is applied, θ: the inclination angle of the semiconductor chip, and W: the weight of the semiconductor chip.

Claims (1)

【実用新案登録請求の範囲】 (1) 集積回路用半導体チツプをはんだバンプを
介して配線基板の配線導体に接続すると同時に配
線基板上に実装する構造であつて、氷導体チツプ
の中央部には配線導体に接続すべき複数個の接続
バンプを集中配置して設けるとともに周縁部には
模擬バンプを複数個分散配置して設け、配線基板
には半導体チツプ側の模擬バンプに対応して模擬
接続点を設け、接続バンプを配線導体に模擬バン
プを模擬接続点にそれぞれ対置した状態で接続バ
ンプを配線導体に接合することにより半導体チツ
プを配線基板に接続かつ実装するようにしたこと
を特徴とする半導体集積回路チツプの実装構造。 (2) 実用新案登録請求の範囲第1項に記載の実
装構造において、模擬バンプが半導体チツプのも
つ方形の4隅に分散配置して設けられることを特
徴とする半導体集積回路チツプの実装構造。 (3) 実用新案登録請求の範囲第2項に記載の実
装構造において、模擬バンプが隅あたり1〜3個
設けられることを特徴とする半導体集積回路チツ
プの実装構造。 (4) 実用新案登録請求の範囲第1項に記載の実
装構造において、模擬バンプが接続バンプと同形
状のはんだバンプであり、かつ集積回路とは絶縁
して設けられることを特徴とする半導体集積回路
チツプの実装構造。 (5) 実用新案登録請求の範囲第1項に記載の実
装構造において、模擬接続点が配線導体と類似の
形状の絶縁体で形成されることを特徴とする半導
体集積回路チツプの実装構造。 (6) 実用新案登録請求の範囲第1項に記載の実
装構造において、模擬バンプが集積回路とは絶縁
して設けられ、模擬接続点として配線導体が用い
られることを特徴とする半導体集積回路チツプの
実装構造。
[Scope of Claim for Utility Model Registration] (1) A structure in which a semiconductor chip for an integrated circuit is connected to a wiring conductor of a wiring board via a solder bump and simultaneously mounted on the wiring board, in which the central part of the ice conductor chip is A plurality of connection bumps to be connected to the wiring conductor are arranged in a concentrated manner, and a plurality of simulated bumps are arranged distributed around the periphery, and simulated connection points are provided on the wiring board corresponding to the simulated bumps on the semiconductor chip side. A semiconductor chip is connected to and mounted on a wiring board by bonding the connection bumps to the wiring conductor with the connection bumps placed opposite to the wiring conductors and the simulated bumps placed opposite to the simulated connection points. Mounting structure of integrated circuit chip. (2) A mounting structure for a semiconductor integrated circuit chip according to claim 1 of the utility model registration, characterized in that the dummy bumps are distributed and arranged at four corners of a rectangle of the semiconductor chip. (3) Utility Model Registration A mounting structure for a semiconductor integrated circuit chip according to claim 2, characterized in that one to three simulated bumps are provided per corner. (4) A semiconductor integrated circuit in the mounting structure according to claim 1 of the utility model registration claim, characterized in that the dummy bumps are solder bumps having the same shape as the connection bumps, and are provided insulated from the integrated circuit. Circuit chip mounting structure. (5) Utility Model Registration Claim 1. A mounting structure for a semiconductor integrated circuit chip, characterized in that the simulated connection point is formed of an insulator having a shape similar to that of a wiring conductor. (6) A semiconductor integrated circuit chip characterized in that, in the mounting structure described in claim 1 of the utility model registration claim, the dummy bumps are provided insulated from the integrated circuit, and a wiring conductor is used as the dummy connection point. implementation structure.
JP1987150142U 1987-09-30 1987-09-30 Pending JPS6457643U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987150142U JPS6457643U (en) 1987-09-30 1987-09-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987150142U JPS6457643U (en) 1987-09-30 1987-09-30

Publications (1)

Publication Number Publication Date
JPS6457643U true JPS6457643U (en) 1989-04-10

Family

ID=31423015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987150142U Pending JPS6457643U (en) 1987-09-30 1987-09-30

Country Status (1)

Country Link
JP (1) JPS6457643U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE39603E1 (en) 1994-09-30 2007-05-01 Nec Corporation Process for manufacturing semiconductor device and semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE39603E1 (en) 1994-09-30 2007-05-01 Nec Corporation Process for manufacturing semiconductor device and semiconductor wafer

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