JPS62207860A - Vacuum deposition apparatus - Google Patents
Vacuum deposition apparatusInfo
- Publication number
- JPS62207860A JPS62207860A JP61050167A JP5016786A JPS62207860A JP S62207860 A JPS62207860 A JP S62207860A JP 61050167 A JP61050167 A JP 61050167A JP 5016786 A JP5016786 A JP 5016786A JP S62207860 A JPS62207860 A JP S62207860A
- Authority
- JP
- Japan
- Prior art keywords
- deflection
- signal
- axis
- electron beam
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は真空蒸着装置に関し、更に詳述すれば電子銃よ
りの電子ビームを偏向して大型ルツボ内の蒸発材料を均
一に加熱し、大型基板等の表面に均一な膜厚で成膜する
装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a vacuum evaporation device, and more specifically, it deflects an electron beam from an electron gun to uniformly heat the evaporated material in a large crucible. The present invention relates to an apparatus for forming a film with a uniform thickness on the surface of a substrate or the like.
[従来技術]
従来の蒸着装置では、大型(大出力)の真空蒸着用電子
銃(以下電子銃と称す)によって、例えば間口面積数1
000cm2程度の比較的大型のルツボ内に入れられた
蒸発材料を溶解、蒸発させるために、第5図に示すよう
な複数の電子銃、例えば10a、10b、10c、10
dより放射される電子ビーム11によってルツボ12内
の蒸発材料13を照射するか、或いは第6図に示すよう
に単一の電子銃10aより放射される電子ビーム11を
走査してルツボ12内の蒸発材料13を照射するように
していた。[Prior art] In a conventional vapor deposition apparatus, a large (high output) vacuum vapor deposition electron gun (hereinafter referred to as an electron gun) is used to e.g.
In order to melt and evaporate the evaporation material placed in a relatively large crucible of about 1,000 cm2, a plurality of electron guns such as 10a, 10b, 10c, 10 as shown in FIG.
The evaporation material 13 in the crucible 12 is irradiated with the electron beam 11 emitted from the electron beam 10a, or the evaporation material 13 in the crucible 12 is scanned with the electron beam 11 emitted from a single electron gun 10a as shown in FIG. The evaporation material 13 was irradiated.
[発明が解決しようとする問題点]
ところで、第5図に示した前者の複数の電子銃を備えた
装置では、電子銃の数の増加に伴って機構、制御回路等
が複雑になり装置が高価になると共に複数の電子銃を操
作するため操作性が悪くなる。一方、第6図に示した後
者の単一の電子銃より構成された装置では、電子ビーム
11をサイン波偏向信号又は三角波偏向信号で走査して
いるため、例えばサイン波偏向信号で第7図(イ)に示
すように蒸発材料13上を走査した場合には、蒸発材料
13のエッチ部分での電子ビーム11の滞在時間が長く
なるため、第7図(ロ)の温度曲線で示すように両端の
エッチ部分と中心部分Oでは均一に加熱されない欠点が
あった。又、第8図(イ)に示すように蒸発材料13上
を三角波偏向信号で走査した場合も、同様に蒸発材料1
3のエッチ部分での電子ビーム11の滞在時間が長くな
るため、第8図(ロ)の温度曲線で示すように両端のエ
ッチ部分と中心部分Oで均一に加熱されない。従って、
このような従来の蒸着装置では、大型基板等の表面に均
一な膜厚で成膜する場合の欠点となっていた。[Problems to be Solved by the Invention] By the way, in the former device equipped with a plurality of electron guns shown in FIG. 5, as the number of electron guns increases, the mechanism, control circuit, etc. become complicated, and the device becomes It becomes expensive and has poor operability since multiple electron guns are operated. On the other hand, in the latter device configured with a single electron gun shown in FIG. 6, the electron beam 11 is scanned with a sine wave deflection signal or a triangular wave deflection signal. When the evaporation material 13 is scanned as shown in (a), the residence time of the electron beam 11 in the etched portion of the evaporation material 13 becomes longer, so that the temperature curve shown in FIG. 7(b) There was a drawback that the etched portions at both ends and the central portion O were not heated uniformly. Also, when the evaporation material 13 is scanned with a triangular wave deflection signal as shown in FIG. 8(a), the evaporation material 1
Since the residence time of the electron beam 11 in the etched portion 3 becomes longer, the etched portions at both ends and the central portion O are not uniformly heated as shown by the temperature curve in FIG. 8(b). Therefore,
Such conventional vapor deposition apparatuses have a drawback when forming a film with a uniform thickness on the surface of a large substrate or the like.
本発明は以上の点に鑑み、比較的大型のルツボ内に入れ
られた蒸発材料を電子ビームによって均一に加熱し、大
型基板等の表面に均一な膜厚で成膜する真空蒸着装置を
提供することを目的としている。In view of the above points, the present invention provides a vacuum evaporation apparatus that uniformly heats an evaporation material placed in a relatively large crucible with an electron beam and forms a film with a uniform thickness on the surface of a large substrate, etc. The purpose is to
[問題点を解決するための手段]
本問題点を解決するための本発明の構成は、電子銃より
の電子ビームをルツボ内の蒸発材料上に集束した状態で
照射すると共に、該電子ビームをX、Y偏向電極から成
る偏向手段によって偏向して該蒸発材料上を走査するよ
うに構成した装置において、前記偏向手段のX軸、YI
h!l偏向手段のいずれか一方に偏向信号として変調信
号を供給する変調信号発生手段を設け、前記変調信号発
生手段よりの変調された偏向13号によって前記電子ビ
ームを走査し、前記ルツボ内の蒸発材料上に該電子ビー
ムを照射するように構成したことを特徴としている。[Means for solving the problem] The configuration of the present invention for solving the problem is to irradiate the evaporation material in the crucible with an electron beam from an electron gun in a focused state, and to In an apparatus configured to scan the evaporated material by deflecting it by a deflection means consisting of X and Y deflection electrodes, the X axis, YI of the deflection means
h! A modulation signal generation means for supplying a modulation signal as a deflection signal is provided to either one of the deflection means, and the electron beam is scanned by the modulated deflection No. 13 from the modulation signal generation means, and the evaporated material in the crucible is It is characterized by being configured so that the electron beam is irradiated onto the top.
[実施例] 以下本発明の実施例を添附図面に基づき詳述する。[Example] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
第1図は本発明の一実施例の構成図である。第1図にお
いて、1は電子ビーム2を放射する電子銃、3は集束レ
ンズ、4はビーム偏向電極で、該ビーム偏向電極4は、
電子ビーム2をX軸方向に偏向するX軸偏向電極4X+
、4X2 (第1図で点線で示し4X+は図示せず
。)及びY軸偏向電14Y1.4Yzより構成されてい
る。5は偏向電極4にX軸及びY軸偏向信号を供給する
偏向電源、6は偏向電源5よりの偏向信号によって、例
えばY軸偏向電極4Y1.4Y2に供給するY軸偏向信
号を例えば振幅変調する変調信号発生器であり、このよ
うに構成された装置では、X@偏向電極4X+ 、4X
2には偏向電源5より増幅器7を介して第2図(イ)に
示す鋸歯状波の偏向信号Vxが供給され、Y軸偏向電極
4Y+ 、4Yzには増幅器8を介して第2図(ロ)に
示す振幅変調された偏向信号Vyが供給される。13は
前述した蒸発材料であり、第1図においては、ルツボ1
2は省略されている。FIG. 1 is a block diagram of an embodiment of the present invention. In FIG. 1, 1 is an electron gun that emits an electron beam 2, 3 is a focusing lens, and 4 is a beam deflection electrode.
X-axis deflection electrode 4X+ that deflects the electron beam 2 in the X-axis direction
, 4X2 (shown by a dotted line in FIG. 1, 4X+ is not shown) and a Y-axis deflector 14Y1.4Yz. Reference numeral 5 denotes a deflection power supply that supplies X-axis and Y-axis deflection signals to the deflection electrode 4; 6, the deflection signal from the deflection power supply 5 modulates, for example, the amplitude of the Y-axis deflection signal supplied to the Y-axis deflection electrodes 4Y1, 4Y2, for example. It is a modulation signal generator, and in the device configured in this way, X@deflection electrode 4X+, 4X
2 is supplied with a sawtooth wave deflection signal Vx shown in FIG. 2(a) from the deflection power supply 5 via an amplifier 7, and a sawtooth wave deflection signal Vx shown in FIG. ) is supplied with an amplitude-modulated deflection signal Vy. 13 is the evaporation material mentioned above, and in FIG.
2 is omitted.
このように構成された装置で、Y軸偏向電極4Ys 、
4Y2に第2図(ロ)に示す振幅変調された偏向信号V
yが供給されると、蒸発材料13が電子ビーム2によっ
て第3図(イ)に示すように走査される。このように蒸
発材料13が走査されると、蒸発材料13のエッチ部分
のみならず中心部分Oにも電子ビーム2の滞在時間が長
くなり、従って、熱が矢印aの方向に伝播するため、第
3図(ロ)の温度曲線で示すように両端のエッチ部分と
中心部分0が略同じ温度で均一に加熱される。In the device configured in this way, the Y-axis deflection electrode 4Ys,
4Y2 is the amplitude-modulated deflection signal V shown in FIG. 2 (b).
When y is supplied, the evaporation material 13 is scanned by the electron beam 2 as shown in FIG. 3(a). When the evaporation material 13 is scanned in this way, the residence time of the electron beam 2 becomes longer not only in the etched portion of the evaporation material 13 but also in the central portion O, and therefore heat propagates in the direction of the arrow a. As shown by the temperature curve in FIG. 3(b), the etched portions at both ends and the central portion 0 are uniformly heated to approximately the same temperature.
又、蒸発試料13に照射される電子ビーム2がY軸偏向
電極4YL、4Y2によって第4図(イ)に示すように
振幅変調されて走査された場合も、前記同様に蒸発材料
13のエッヂ部分のみならず中心部分Oが、第4図(ロ
)の温度曲線で示すように略同じ温度で均一に加熱され
る。従って、ルツボ内の蒸発材料表面に電子ビームを前
述の如く走査しながら照射することにより、例えばX軸
方向の温度分布だけでなくY軸方向の温度分布も均一に
なるように考慮されるため、大型ルツボ、特に間口が長
方形のルツボではその効果が顕著となり、このような蒸
着装置を使用することにより、大型基板等の表面に均一
な膜厚で成膜することができる。Also, when the electron beam 2 irradiated onto the evaporated sample 13 is amplitude-modulated and scanned by the Y-axis deflection electrodes 4YL and 4Y2 as shown in FIG. In addition, the central portion O is uniformly heated to substantially the same temperature as shown by the temperature curve in FIG. 4(b). Therefore, by irradiating the surface of the evaporated material in the crucible with an electron beam while scanning as described above, it is considered that not only the temperature distribution in the X-axis direction but also the temperature distribution in the Y-axis direction is made uniform, for example. This effect is noticeable in large crucibles, especially crucibles with rectangular openings, and by using such a vapor deposition apparatus, it is possible to form a film with a uniform thickness on the surface of a large substrate or the like.
尚、本発明は以上の実施例に限定されることなく、他の
態様で実施することができる。上記実施例においては、
電子ビームの偏向を静電的に偏向する場合を説明したが
、X、Y軸偏向電極を走査コイルに代えて励磁電流を供
給して電磁的に偏向しても良い。Note that the present invention is not limited to the above embodiments, and can be implemented in other embodiments. In the above example,
Although the case where the electron beam is electrostatically deflected has been described, the X and Y axis deflection electrodes may be replaced with scanning coils and an excitation current may be supplied to electromagnetically deflect the electron beam.
又、上記実施例では、一方の偏向電極(上記実施例では
Y軸)に供給される偏向信号を振幅変調としたが、振幅
変調と周波数変調とによる変調信号を偏向信号として供
給しても同様の効果を有する。Furthermore, in the above embodiment, the deflection signal supplied to one of the deflection electrodes (Y axis in the above embodiment) is amplitude modulated, but the same result can be obtained even if a modulated signal by amplitude modulation and frequency modulation is supplied as the deflection signal. It has the effect of
更に、変調信号は上記実施例のようにサイン波に限定さ
れることなく三角波、鋸歯状波によっても同様な効果を
得ることができる。Furthermore, the modulation signal is not limited to a sine wave as in the above embodiments, but the same effect can be obtained by using a triangular wave or a sawtooth wave.
[発明の効果]
以上詳述したように本発明によれば、比較的大型のルツ
ボ内に入れられた蒸発材料を電子ビームによって走査し
て加熱する場合に、一方向の温度分布だけでなくそれと
直交する方向の温度分布も均一になるように考慮してい
るため、ルツボ内の蒸発材料が均一に加熱され、従って
、大型基板等の表面が均一な膜厚で成膜できる真空蒸着
装置が提供される。[Effects of the Invention] As detailed above, according to the present invention, when heating an evaporation material placed in a relatively large crucible by scanning it with an electron beam, it is possible to control the temperature distribution not only in one direction but also in the same direction. Since the temperature distribution in the orthogonal directions is also considered to be uniform, the evaporation material in the crucible is heated uniformly, thus providing a vacuum evaporation device that can form a film with a uniform thickness on the surface of large substrates, etc. be done.
第1図は本発明の一実施例の構成図、第2図(イ)、(
ロ)は偏向電極に供給する偏向信号の一例、第3図(イ
)、(ロ)は一実施例装置を説明するための図、第4図
(イ)、(ロ)は他の実施例を説明するための図、第5
図乃至第8図は従来装置を説明するための図である。
1:電子銃、2:電子ビーム、3:集束レンズ、4:偏
向電極、5:偏向電源、6:変調信号発生器、7,8:
増幅器、12ニルツボ、13:蒸発材料。Figure 1 is a configuration diagram of an embodiment of the present invention, Figures 2 (A), (
B) is an example of a deflection signal supplied to the deflection electrode, FIGS. 3A and 3B are diagrams for explaining one embodiment of the device, and FIGS. 4A and 4B are other embodiments. Figure 5 to explain
Figures 8 through 8 are diagrams for explaining the conventional device. 1: Electron gun, 2: Electron beam, 3: Focusing lens, 4: Deflection electrode, 5: Deflection power supply, 6: Modulation signal generator, 7, 8:
Amplifier, 12 Nil acupoint, 13: Evaporation material.
Claims (3)
に集束した状態で照射すると共に、該電子ビームをX、
Y偏向電極から成る偏向手段によって偏向して該蒸発材
料上を走査するように構成した装置において、前記偏向
手段のX軸、Y軸偏向手段のいずれか一方に偏向信号と
して変調信号を供給する変調信号発生手段を設け、前記
変調信号発生手段よりの変調された偏向信号によって前
記電子ビームを走査し、前記ルツボ内の蒸発材料上に該
電子ビームを照射するように構成した真空蒸着装置。(1) The electron beam from the electron gun is irradiated onto the evaporation material in the crucible in a focused state, and the electron beam is
In an apparatus configured to scan the evaporated material by deflecting it by a deflection means consisting of a Y deflection electrode, modulation in which a modulation signal is supplied as a deflection signal to either the X-axis or Y-axis deflection means of the deflection means. A vacuum evaporation apparatus comprising a signal generating means configured to scan the electron beam using a modulated deflection signal from the modulated signal generating means and irradiate the evaporation material in the crucible with the electron beam.
号は鋸歯状波の偏向信号が供給され、Y軸偏向電極に供
給される偏向信号は振幅変調信号が供給される特許請求
の範囲第1項記載の真空蒸着装置。(2) The deflection signal supplied to the X-axis deflection electrode of the deflection means is a sawtooth wave deflection signal, and the deflection signal supplied to the Y-axis deflection electrode is an amplitude modulation signal. The vacuum evaporation apparatus according to item 1.
号は鋸歯状波の偏向信号が供給され、Y軸、偏向電極に
供給される偏向信号は周波数、振幅変調信号が供給され
る特許請求の範囲第1項記載の真空蒸着装置。(3) A patent in which the deflection signal supplied to the X-axis deflection electrode of the deflection means is a sawtooth wave deflection signal, and the deflection signal supplied to the Y-axis and deflection electrodes is a frequency and amplitude modulation signal. A vacuum evaporation apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61050167A JPS62207860A (en) | 1986-03-07 | 1986-03-07 | Vacuum deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61050167A JPS62207860A (en) | 1986-03-07 | 1986-03-07 | Vacuum deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62207860A true JPS62207860A (en) | 1987-09-12 |
| JPH0338340B2 JPH0338340B2 (en) | 1991-06-10 |
Family
ID=12851645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61050167A Granted JPS62207860A (en) | 1986-03-07 | 1986-03-07 | Vacuum deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62207860A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009275244A (en) * | 2008-05-13 | 2009-11-26 | Ulvac Japan Ltd | Vapor deposition method of metallic oxide film, and method for manufacturing plasma display panel |
| JP2012207310A (en) * | 2012-07-13 | 2012-10-25 | Ulvac Japan Ltd | Vapor deposition method of metal oxide film, and method for manufacturing plasma display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443883A (en) * | 1977-09-16 | 1979-04-06 | Hitachi Ltd | Metallizing apparatus using electron beam |
| US4230739A (en) * | 1978-03-21 | 1980-10-28 | Leybold-Heraeus Gmbh | Method of evaporating melts of alloys of metals having different vapor pressures |
| DE3330092A1 (en) * | 1983-08-20 | 1985-03-07 | Leybold-Heraeus GmbH, 5000 Köln | METHOD FOR ADJUSTING THE LOCAL EVAPORATION PERFORMANCE ON EVAPORATORS IN VACUUM EVAPORATION PROCESSES |
| JPS62149864A (en) * | 1985-12-24 | 1987-07-03 | Ishikawajima Harima Heavy Ind Co Ltd | Electron beam irradiation method |
-
1986
- 1986-03-07 JP JP61050167A patent/JPS62207860A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443883A (en) * | 1977-09-16 | 1979-04-06 | Hitachi Ltd | Metallizing apparatus using electron beam |
| US4230739A (en) * | 1978-03-21 | 1980-10-28 | Leybold-Heraeus Gmbh | Method of evaporating melts of alloys of metals having different vapor pressures |
| DE3330092A1 (en) * | 1983-08-20 | 1985-03-07 | Leybold-Heraeus GmbH, 5000 Köln | METHOD FOR ADJUSTING THE LOCAL EVAPORATION PERFORMANCE ON EVAPORATORS IN VACUUM EVAPORATION PROCESSES |
| JPS6059064A (en) * | 1983-08-20 | 1985-04-05 | ライボルト・アクチエンゲゼルシャフト | Method and device for controlling local evaporation power of evaporator on manufacturing thin layer on substrate by vacuum evaporation process |
| JPS62149864A (en) * | 1985-12-24 | 1987-07-03 | Ishikawajima Harima Heavy Ind Co Ltd | Electron beam irradiation method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009275244A (en) * | 2008-05-13 | 2009-11-26 | Ulvac Japan Ltd | Vapor deposition method of metallic oxide film, and method for manufacturing plasma display panel |
| JP2012207310A (en) * | 2012-07-13 | 2012-10-25 | Ulvac Japan Ltd | Vapor deposition method of metal oxide film, and method for manufacturing plasma display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0338340B2 (en) | 1991-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |