JPS56132337A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS56132337A JPS56132337A JP3582480A JP3582480A JPS56132337A JP S56132337 A JPS56132337 A JP S56132337A JP 3582480 A JP3582480 A JP 3582480A JP 3582480 A JP3582480 A JP 3582480A JP S56132337 A JPS56132337 A JP S56132337A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cyano
- nitro
- halogen
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To enable patterns with high accuracy and superior etching resistance to be formed by a mass production system by using a positive type crosslinkable radiation sensitive resist contg. benzoic acids or dicarboxydiphenyl disulfides. CONSTITUTION:A substrate is coated with a positive type crosslinkable radiation sensitive resist film contg. One or more kinds of compounds represented by formula I (where each of R1-R3 is a substitutable group and one or more among them are nitro, halogen or cyano) or by formula II (where each of R4 and R5 is a substitutable group and one or more among them are nitro, halogen or cyano). By heat treating the film, the crosslinking reaction is remarkably accelerated at a low temp. such as <=about 200 deg.C, and an enhancement in the sensitivity of the resist and an improvement in the solvent and heat resistances can be attained. The resulting film is then patterned with high energy radiation and developed to form a superior pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3582480A JPS56132337A (en) | 1980-03-21 | 1980-03-21 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3582480A JPS56132337A (en) | 1980-03-21 | 1980-03-21 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56132337A true JPS56132337A (en) | 1981-10-16 |
Family
ID=12452696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3582480A Pending JPS56132337A (en) | 1980-03-21 | 1980-03-21 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56132337A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60263143A (en) * | 1984-06-01 | 1985-12-26 | ローム アンド ハース コンパニー | Thermally stable copolymer image and formation thereof |
-
1980
- 1980-03-21 JP JP3582480A patent/JPS56132337A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60263143A (en) * | 1984-06-01 | 1985-12-26 | ローム アンド ハース コンパニー | Thermally stable copolymer image and formation thereof |
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