JPS54158829A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS54158829A
JPS54158829A JP6800078A JP6800078A JPS54158829A JP S54158829 A JPS54158829 A JP S54158829A JP 6800078 A JP6800078 A JP 6800078A JP 6800078 A JP6800078 A JP 6800078A JP S54158829 A JPS54158829 A JP S54158829A
Authority
JP
Japan
Prior art keywords
circuit
decoder
operate
bootstrap
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6800078A
Other languages
Japanese (ja)
Inventor
Mikio Kyomasu
Hideharu Toyomoto
Isato Kazama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6800078A priority Critical patent/JPS54158829A/en
Publication of JPS54158829A publication Critical patent/JPS54158829A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To make it possible to operate a device by a single power voltage and also to reduce the power consumption by composing the entire device of C-MOS and then by using a voltage converter circuit and a bootstrap circuit. CONSTITUTION:As Y decoder 15, a bootstrap circuit is used and controlled by programming circuit 20, and voltage converter circuit 21 is interposed between Y register 14 and decoder 15 in order to operate the bootstrap circuit. Further, X address 11, X decoder 12, Y address 14, Y decoder 15, data in/out circuit 18, and circuits 20 and 21 are all composed of C-MOSs, and circuit 21 is used to operate the input buffer circuit for addresses 11 and 14 by a single power supply during both read and write operations. In addition, a bootstrap circuit is used as circuit 20 to perform a write operation with a low voltage.
JP6800078A 1978-06-05 1978-06-05 Semiconductor memory device Pending JPS54158829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6800078A JPS54158829A (en) 1978-06-05 1978-06-05 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6800078A JPS54158829A (en) 1978-06-05 1978-06-05 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS54158829A true JPS54158829A (en) 1979-12-15

Family

ID=13361179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6800078A Pending JPS54158829A (en) 1978-06-05 1978-06-05 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS54158829A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153296A (en) * 1982-03-05 1983-09-12 Ricoh Co Ltd Memory driving circuit
US7031197B2 (en) 1990-09-14 2006-04-18 Oki Electric Industry Co., Ltd. EEPROM writing and reading method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153296A (en) * 1982-03-05 1983-09-12 Ricoh Co Ltd Memory driving circuit
US7031197B2 (en) 1990-09-14 2006-04-18 Oki Electric Industry Co., Ltd. EEPROM writing and reading method

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