JPH09127885A - Display element - Google Patents

Display element

Info

Publication number
JPH09127885A
JPH09127885A JP7305077A JP30507795A JPH09127885A JP H09127885 A JPH09127885 A JP H09127885A JP 7305077 A JP7305077 A JP 7305077A JP 30507795 A JP30507795 A JP 30507795A JP H09127885 A JPH09127885 A JP H09127885A
Authority
JP
Japan
Prior art keywords
light
light emitting
organic
quarter
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP7305077A
Other languages
Japanese (ja)
Inventor
Nobutoshi Asai
伸利 浅井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP7305077A priority Critical patent/JPH09127885A/en
Publication of JPH09127885A publication Critical patent/JPH09127885A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/8791Arrangements for improving contrast, e.g. preventing reflection of ambient light

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To make it possible to lessen the reflection of the light from outside entering from the exit surface of an element within the element and to improve the contrast of a displayed image, etc., by providing the light exit surface with a circularly polarizing means. SOLUTION: Only the linearly polarized light component in the longitudinal direction aligned to the axis 11a of the polarized light of a linear polarizing plate 11 among the external light rays L having the random polarization components made incident on the linearly polarized light 11 from outside is made incident by passing the polarizing plate 11. The incident linearly polarized light 14 in the longitudinal direction changes to a right (or left) circularly polarized light 15 at the time of passing a quarter-wave plate 23 having a double refractive main axis 23a inclined 45 deg.. This right (or left) circularly polarized light 15 is reflected on the inside surface of the electrode 1 of an org. electric field light emitting (org. E1) element 40 and is reflected as the left (or right) circularly polarized light 16. This light is changed again into the linearly polarized light 17 in the transverse direction at the time of passing the quarter-wave plate 23 and the emission thereof to the outside is shut off by the polarizing plate 11. As a result, the degradation in the contrast at the time of light emission as the display element does not arise and the sufficient light emissive luminance is maintained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、表示素子に関し、
例えば、自発光の平面型ディスプレイであって、特に、
有機薄膜を電界発光層に用いる有機電界発光ディスプレ
イに好適な表示素子に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device,
For example, a self-luminous flat display, in particular
The present invention relates to a display device suitable for an organic electroluminescent display using an organic thin film for an electroluminescent layer.

【0002】[0002]

【従来の技術】有機電界発光素子(以下、有機EL素子
と称することがある。)は、1μm以下の膜厚であり、
電流を注入することにより電気エネルギーを光エネルギ
ーに変換して面状に発光するなど、自発光型の表示デバ
イスとして理想的な特徴を有している。
2. Description of the Related Art An organic electroluminescent device (hereinafter sometimes referred to as an organic EL device) has a film thickness of 1 μm or less,
It has ideal characteristics as a self-luminous display device, such as converting electric energy into light energy by injecting a current and emitting light in a planar manner.

【0003】図22は、従来の有機EL素子10の一例を示
す。この有機EL素子10は、透明基板(例えばガラス基
板)6上に、ITO(Indium tin oxide)透明電極5、
ホール輸送層4、発光層3、電子輸送層2、陰極(例え
ばアルミニウム電極)1を例えば真空蒸着法で順次製膜
したものである。
FIG. 22 shows an example of a conventional organic EL element 10. This organic EL element 10 includes an ITO (Indium tin oxide) transparent electrode 5, a transparent substrate (for example, a glass substrate) 6,
The hole transport layer 4, the light emitting layer 3, the electron transport layer 2, and the cathode (for example, an aluminum electrode) 1 are sequentially formed by, for example, a vacuum vapor deposition method.

【0004】そして、陽極である透明電極5と陰極1と
の間に直流電圧7を選択的に印加することによって、透
明電極5から注入されたホールがホール輸送層4を経
て、また陰極1から注入された電子が電子輸送層2を経
て、それぞれ発光層3に到達して電子−ホールの再結合
が生じ、ここから所定波長の発光8が生じ、透明基板6
の側から観察できる。
By selectively applying a DC voltage 7 between the transparent electrode 5 which is an anode and the cathode 1, the holes injected from the transparent electrode 5 pass through the hole transport layer 4 and from the cathode 1. The injected electrons reach the light emitting layer 3 via the electron transport layer 2 and electron-hole recombination occurs, and light emission 8 of a predetermined wavelength is generated from this, and the transparent substrate 6
It can be observed from the side.

【0005】発光層3には、例えば亜鉛錯体を含有させ
ることもできるが、実質的に亜鉛錯体のみからなる層
(但し、複数種の亜鉛錯体の併用が可能)であってよい
し、或いは亜鉛錯体に螢光物質を添加した層であっても
よい。また、亜鉛錯体と他の発光物質であるアントラセ
ン、ナフタリン、フェナントレン、ピレン、クリセン、
ペリレン、ブタジエン、クマリン、アクリジン、スチル
ベン等を併用してよい。こうした亜鉛錯体又は螢光物質
等との混合物は、電子輸送層2に含有させることができ
る。
The light emitting layer 3 may contain, for example, a zinc complex, but may be a layer consisting essentially of a zinc complex (provided that a plurality of zinc complexes can be used in combination), or zinc. It may be a layer in which a fluorescent substance is added to the complex. In addition, zinc complex and other luminescent substances such as anthracene, naphthalene, phenanthrene, pyrene, chrysene,
Perylene, butadiene, coumarin, acridine, stilbene and the like may be used in combination. A mixture with such a zinc complex or a fluorescent substance can be contained in the electron transport layer 2.

【0006】図23は、別の従来例を示すものであり、こ
の例においては、発光層3を省略し、電子輸送層2に上
記の亜鉛錯体又は螢光物質との混合物を含有させ、電子
輸送層2とホール輸送層4との界面から所定波長の発光
18が生じるように構成した有機EL素子20を示すもので
ある。
FIG. 23 shows another conventional example. In this example, the light emitting layer 3 is omitted, and the electron transporting layer 2 is made to contain a mixture with the above zinc complex or a fluorescent substance. Light emission of a predetermined wavelength from the interface between the transport layer 2 and the hole transport layer 4
18 shows an organic EL element 20 configured so that 18 occurs.

【0007】図24は、上記の有機EL素子の具体例を示
す。即ち、各有機層(ホール輸送層4、発光層3又は電
子輸送層2)の積層体を陰極1と陽極5との間に配する
が、これらの電極をマトリクス状に交差させてストライ
プ状に設け、輝度信号回路30、シフトレジスタ内蔵の制
御回路31によって時系列に信号電圧を印加し、多数の交
差位置(画素)にてそれぞれ発光させるように構成して
いる。
FIG. 24 shows a specific example of the above organic EL element. That is, a laminated body of each organic layer (hole transport layer 4, light emitting layer 3 or electron transport layer 2) is disposed between the cathode 1 and the anode 5, and these electrodes are crossed in a matrix to form a stripe shape. A signal voltage is applied in time series by the luminance signal circuit 30 and the control circuit 31 with a built-in shift register, and light is emitted at each of a large number of intersection positions (pixels).

【0008】従って、このような構成により、ディスプ
レイとして勿論、画像再生装置としても使用可能とな
る。なお、上記のストライプパターンを赤(R)、緑
(G)、青(B)の各色毎に配し、フルカラー又はマル
チカラー用として構成することができる。
Therefore, with such a structure, it can be used not only as a display but also as an image reproducing apparatus. The above stripe pattern can be arranged for each color of red (R), green (G), and blue (B) to be configured for full color or multi-color.

【0009】こうした有機EL素子を用いた、複数の画
素からなる表示デバイスにおいて、発光する有機薄膜層
2、3、4は一般に、透明電極5と金属電極1との間に
挟まれており、透明電極5側に発光する。
In a display device including a plurality of pixels using such an organic EL element, the organic thin film layers 2, 3 and 4 which emit light are generally sandwiched between the transparent electrode 5 and the metal electrode 1 and are transparent. Light is emitted to the electrode 5 side.

【0010】ところが、有機EL素子では、発光輝度を
良好にするために、金属電極1として、Mg、MgA
g、MgIn、Al、LiAl等のような光反射率の高
い金属を用い、発光光を反射して出射量(発光輝度)を
高めることが多い。従って、このような素子構造におい
ては、電界発光していない状態では、光反射性の強いミ
ラーとなっており、外界の景色が写ったり反射があり、
また発光した状態でも、コントラストが低下したり、黒
色が表現できなくなり、ディスプレイとして用いるには
致命的な問題点が生じることがあった。
However, in the organic EL element, Mg and MgA are used as the metal electrode 1 in order to improve the emission brightness.
It is often the case that a metal having a high light reflectance, such as g, MgIn, Al, LiAl, etc., is used to reflect the emitted light to increase the emission amount (emission luminance). Therefore, in such an element structure, when it is not electroluminescent, it is a mirror with strong light reflectivity, and there is reflection or reflection of the outside scene.
Further, even when the light is emitted, the contrast is lowered and black cannot be expressed, which may cause a fatal problem for use as a display.

【0011】このように、従来の有機EL素子では、入
射した外部光の素子内部での反射によって画素表示に悪
影響が生じ易い。しかしながら、これまでの有機EL素
子においては、外部光の反射の問題に対する有効な対策
は講じられてはいないのが実情である。
As described above, in the conventional organic EL element, the reflection of the incident external light inside the element is likely to adversely affect the pixel display. However, in the conventional organic EL device, no effective countermeasure has been taken against the problem of reflection of external light.

【0012】[0012]

【発明が解決しようとする課題】本発明の目的は、上記
のような実情に鑑みてなされたものであって、素子内部
に組み込まれた金属電極等の反射性の大きい反射面によ
る光反射を効果的に防止でき、表示素子としての発光時
におけるコントラストの低下等が生じず、十分な発光輝
度を確保できる表示素子を提供することにある。
SUMMARY OF THE INVENTION The object of the present invention was made in view of the above-mentioned circumstances, in which light reflection by a highly reflective reflecting surface such as a metal electrode incorporated in an element is prevented. It is an object of the present invention to provide a display element which can be effectively prevented and which does not cause a decrease in contrast during light emission as a display element and can secure sufficient emission brightness.

【0013】[0013]

【課題を解決するための手段】本発明者は、上記の目的
を解決するため鋭意検討を重ねた結果、発光素子として
の性能は損なわずに外部光の反射を大幅に減少させるこ
とができる反射防止機構を見出し、本発明に到達したも
のである。
The present inventor has conducted extensive studies in order to solve the above-mentioned object, and as a result, the reflection of external light can be greatly reduced without impairing the performance as a light emitting device. The inventors have found a prevention mechanism and arrived at the present invention.

【0014】即ち、本発明は、光出射面側に円偏光手段
が設けられている表示素子に係るものである。
That is, the present invention relates to a display element in which the circularly polarizing means is provided on the light emitting surface side.

【0015】本発明者は、表示素子の光出射面から入射
した外部からの光の素子内部での反射を大幅に低下さ
せ、表示画像等のコントラストを著しく改善する上で、
光出射面に円偏光手段が設けられることが極めて有効で
あることを見出したのである。
The present inventor significantly reduces the reflection of the light from the outside incident from the light emitting surface of the display element inside the element, and significantly improves the contrast of the display image and the like.
It has been found that it is extremely effective to provide a circular polarization means on the light emitting surface.

【0016】なお、上記の「表示素子」とは、有機EL
素子等の素子のみならず、これを組み込んだディスプレ
イ等のデバイスも包含する概念とする(以下、同様)。
The above "display element" means an organic EL.
The concept includes not only elements such as elements but also devices such as displays incorporating the elements (the same applies hereinafter).

【0017】[0017]

【発明の実施の形態】本発明による表示素子は、発光層
の光出射面とは反対側に光反射層が形成されている構造
からなっていてよい。
BEST MODE FOR CARRYING OUT THE INVENTION The display device according to the present invention may have a structure in which a light reflecting layer is formed on the side of the light emitting layer opposite to the light emitting surface.

【0018】また、円偏光手段が特に、直線偏光板と1
/4波長板とで構成されていることが望ましい。
Further, the circularly polarizing means is particularly a linear polarizing plate and a linear polarizing plate.
It is desirable to be composed of a quarter wave plate.

【0019】この場合、1/4波長板が、広波長範囲で
ほぼ1/4波長の位相差が得られるように、複数の複屈
折板によって構成されており、特に1/4波長板が複屈
折特性の異なる複数の複屈折板(例えば異なる複屈折板
を貼り合わせること)によって構成されていることが望
ましい。
In this case, the quarter-wave plate is composed of a plurality of birefringent plates so that a phase difference of approximately one-quarter wavelength can be obtained in a wide wavelength range. It is desirable to be configured by a plurality of birefringent plates having different refraction characteristics (for example, different birefringent plates are bonded together).

【0020】また、1/4波長板が、直線偏光板の偏光
軸に対して45度若しくはそれと同等の傾斜の偏光軸を有
していることが望ましい。
Further, it is desirable that the quarter-wave plate has a polarization axis that is 45 degrees with respect to the polarization axis of the linear polarizing plate or that has an inclination equivalent thereto.

【0021】本発明の表示素子は、具体的には、円偏光
手段が素子の光出射側に設けられ、外部からの入射光は
通すが、前記入射光がこの素子の内部で反射した反射光
を外部へ出さないために遮蔽するようになっている。
In the display element of the present invention, specifically, the circularly polarizing means is provided on the light emitting side of the element, and the incident light from the outside is transmitted, but the incident light is reflected light reflected inside the element. It is designed so that it will not be exposed to the outside.

【0022】また、光学的に透明な基体の上に、第1の
電極と発光層と光反射率の高い第2の電極とが積層さ
れ、これらが積層された反対側の前記基体の上に円偏光
手段が設けられ、電界発光素子として構成することがで
きる。
Further, a first electrode, a light emitting layer, and a second electrode having a high light reflectance are laminated on an optically transparent substrate, and on the opposite substrate on which these are laminated. Circular polarization means is provided and can be configured as an electroluminescent device.

【0023】また、光学的に透明な基体の上に、第1の
電極と発光層と光反射率の高い第2の電極とが積層さ
れ、これらの積層体と前記基体との間に円偏光手段が設
けられ、電界発光素子として構成することができる。こ
の場合は、透明基体の少なくとも一部が円偏光手段を兼
ねていてよい。
A first electrode, a light emitting layer, and a second electrode having a high light reflectance are laminated on an optically transparent substrate, and circularly polarized light is provided between these laminates and the substrate. Means are provided and can be configured as an electroluminescent device. In this case, at least a part of the transparent substrate may also serve as the circular polarization means.

【0024】これらの電界発光素子では、ストライプ状
の複数の第1の電極(例えばITO透明電極)上に、発
光層を含む少なくとも一層のストライプ状の複数の有機
層と、前記第1の電極に交差したストライプ状の複数の
第2の電極(例えば光反射性の強いAl等の金属電極)
とが設けられていることが望ましく、有機電界発光素子
(有機EL素子)又はディスプレイに好適である。これ
は、パッシブマトリクス型(単純マトリクス型)のディ
スプレイに好適である。
In these electroluminescent devices, at least one stripe-shaped plurality of organic layers including a light-emitting layer are provided on a plurality of stripe-shaped first electrodes (for example, ITO transparent electrodes), and the first electrodes are provided. A plurality of crossed stripe-shaped second electrodes (for example, a metal electrode such as Al having strong light reflectivity)
Are preferably provided, and are suitable for an organic electroluminescence device (organic EL device) or a display. This is suitable for a passive matrix type (simple matrix type) display.

【0025】[0025]

【実施例】以下、本発明を実施例により詳細に説明す
る。
EXAMPLES The present invention will be described in detail below with reference to examples.

【0026】図1〜図17は、本発明を有機EL素子に適
用した第1の実施例を示すものである。
1 to 17 show a first embodiment in which the present invention is applied to an organic EL device.

【0027】図1は、本実施例による有機EL素子40に
おいて、発光面である透明基板6側に、1/4波長板23
及び直線偏光板11が順次配置された状態の模式図であ
る。
FIG. 1 shows that in the organic EL element 40 according to this embodiment, a quarter wavelength plate 23 is provided on the transparent substrate 6 side which is a light emitting surface.
FIG. 3 is a schematic diagram showing a state in which a linear polarizing plate 11 is sequentially arranged.

【0028】そして、外部光Lが直線偏光板11及び1/
4波長板23によって構成された円偏光手段49を通過し、
有機EL素子40の金属電極1の内面で反射されるが、こ
の反射光は円偏光手段49によって遮蔽され、外部光入射
側へ戻ることはない。このことを理解するために、本発
明者が本発明に至る過程で検討した内容を図21について
説明する。
Then, the external light L is reflected by the linear polarization plates 11 and 1 /
Passing through the circular polarization means 49 constituted by the four-wave plate 23,
Although reflected by the inner surface of the metal electrode 1 of the organic EL element 40, this reflected light is blocked by the circular polarization means 49 and does not return to the external light incident side. In order to understand this, the contents examined by the present inventor in the course of reaching the present invention will be described with reference to FIG.

【0029】図21には、光ピックアップのレーザ光の戻
りを防止する光学系が示されているが、これは光学の技
術分野ではよく知られたものである。
FIG. 21 shows an optical system for preventing the return of the laser light of the optical pickup, which is well known in the optical technical field.

【0030】即ち、図21に示す光学系によれば、反射面
13に対して光入射側に、1/4波長板12、直線偏光板11
が順次配置され、直線偏光板11の外部から入射した光L
が反射面(反射板)13で反射して、入射時とは反対方向
へ反射光が戻る様子を示している。これを次に説明す
る。
That is, according to the optical system shown in FIG.
1/4 wavelength plate 12 and linear polarization plate 11 on the light incident side with respect to 13
Are sequentially arranged, and light L incident from the outside of the linear polarizing plate 11
Is reflected by the reflecting surface (reflecting plate) 13, and the reflected light returns in the direction opposite to that at the time of incidence. This will be described below.

【0031】まず、直線偏光板11は図示の如く縦方向の
偏光軸11aを有しているので、直線偏光板11に入射する
ランダムな偏光の光Lは、偏光軸11aに合致する直線偏
光の成分のみが通って直線偏光14となる。そして、1/
4波長板12は、上記した直線偏光板11の偏光軸11aに対
して45度傾斜した複屈折の主軸12aを有している。
First, since the linearly polarizing plate 11 has a vertical polarization axis 11a as shown in the drawing, the randomly polarized light L entering the linearly polarizing plate 11 is a linearly polarized light that matches the polarization axis 11a. Only the component passes and becomes linearly polarized light 14. And 1 /
The four-wave plate 12 has a birefringent main axis 12a inclined by 45 degrees with respect to the polarization axis 11a of the linear polarizing plate 11 described above.

【0032】従って、直線偏光板11にランダム偏光の光
Lが入射すると、直線偏光板11を通り、縦方向に偏光さ
れた偏光光14は、1/4波長板12を通過する際に、1/
4波長板12の複屈折特性によって、図示の如くに右(又
は左)円偏光15となって反射面13へ入射する。即ち、直
線偏光板11と1/4波長板12とで円偏光手段19を構成し
ており、この双方が組み合わせられることにより円偏光
が実現される。
Therefore, when the randomly polarized light L is incident on the linear polarizing plate 11, the polarized light 14 that has passed through the linear polarizing plate 11 and is vertically polarized is 1 /
Due to the birefringence characteristic of the four-wave plate 12, right (or left) circularly polarized light 15 is incident on the reflecting surface 13 as shown in the figure. That is, the linear polarization plate 11 and the quarter-wave plate 12 constitute a circular polarization means 19, and circular polarization is realized by combining both of them.

【0033】そして、反射面13で反射された反射光16
は、入射時とは逆方向の左(又は右)偏光となって戻
り、再度1/4波長板12へ入射する。この入射光16は、
1/4波長板12の複屈折特性により、この1/4波長板
12を通過後は、最初に直線偏光板11から入射直後の縦方
向の偏光と直交する図示のような横方向偏光の反射光17
に変化する。
Then, the reflected light 16 reflected by the reflecting surface 13
Is returned to the left (or right) polarized light in the direction opposite to that at the time of incidence, and is incident on the quarter wavelength plate 12 again. This incident light 16 is
Due to the birefringence characteristics of the quarter-wave plate 12, this quarter-wave plate
After passing through 12, first, the reflected light 17 having a horizontal polarization as shown in the drawing that is orthogonal to the vertical polarization immediately after entering from the linear polarization plate 11
Changes to

【0034】従って、この偏光光17は、直線偏光板11の
偏光軸11aとは異なる偏光方向を有しているため、直線
偏光板11で遮蔽され、直線偏光板11の外へは出られなく
なる。
Therefore, since this polarized light 17 has a polarization direction different from the polarization axis 11a of the linear polarizing plate 11, it is blocked by the linear polarizing plate 11 and cannot go out of the linear polarizing plate 11. .

【0035】しかしながら、こうした反射(戻り)防止
のための光学系は、光ピックアップ用としては利用され
てはいるが、上述した有機EL素子においてはその特殊
性の故に、そのままでは適用できないことが判明した。
However, although such an optical system for preventing reflection (return) is used for an optical pickup, it has been proved that it cannot be applied as it is to the above-mentioned organic EL element due to its peculiarity. did.

【0036】即ち、レーザ光のように単色光ではなく、
可視光の全域に亘る波長領域においては、図21に示した
如き従来の1/4波長板12では単板での使用であるため
に、図3の曲線26や27に示す結果と同様に特定の波長で
しか(換言すれば特定の波長以外では)1/4波長の位
相差が得られない。
That is, instead of monochromatic light such as laser light,
In the wavelength range over the entire visible light range, since the conventional quarter-wave plate 12 as shown in FIG. 21 is used as a single plate, it is specified in the same manner as the results shown by the curves 26 and 27 in FIG. The phase difference of ¼ wavelength can be obtained only at the wavelength (in other words, other than the specific wavelength).

【0037】このため、可視光全域に亘って戻り光を遮
断することはできず、所望の反射防止効果が得られな
い。従って、図4に曲線aで示す如く、可視光のほぼ中
心の 550nm近傍の波長光についてのみ反射を防止するこ
とができるにすぎない。
Therefore, the return light cannot be blocked over the entire visible light range, and the desired antireflection effect cannot be obtained. Therefore, as shown by the curve a in FIG. 4, reflection can be prevented only for light having a wavelength in the vicinity of 550 nm, which is substantially the center of visible light.

【0038】しかしながら、本発明者は、ほぼ可視光の
全域で1/4波長の位相差が得られるような特殊な複屈
折板が開発されていることに着目し、これを有機EL素
子に巧みに利用することにより、前記した入射光の素子
内部での反射による戻り光を効果的かつ十二分に遮蔽で
きる構造を案出したのである。
However, the present inventor has noticed that a special birefringent plate capable of obtaining a phase difference of ¼ wavelength in almost the entire visible light range has been developed, and this has been cleverly applied to an organic EL element. The present invention has devised a structure capable of effectively and sufficiently shielding the return light due to the reflection of the above-mentioned incident light inside the element.

【0039】即ち、図1に示すように、直線偏光板11に
外部から入射するランダムな偏光成分を有する外部光L
のうち、直線偏光板11の偏光軸11aに合致する縦方向の
直線偏光成分のみが直線偏光板11を通過して入射し、こ
の入射した縦方向の直線偏光14は、45度傾斜の複屈折主
軸23aを有する1/4波長板23を通過する際に右(又は
左)円偏光15に変化し、この右(又は左)円偏光15は有
機EL素子40の電極1の内面で反射し、左(又は右)円
偏光16となって反射し、再び1/4波長板23を通過時に
横方向の直線偏光17に変化し、直線偏光板11により外部
への出射を遮られる。
That is, as shown in FIG. 1, external light L having a random polarization component which is incident on the linear polarizing plate 11 from the outside.
Of these, only the vertical linearly polarized light component that matches the polarization axis 11a of the linearly polarizing plate 11 passes through the linearly polarizing plate 11 and is incident, and the incident vertical linearly polarized light 14 is the birefringence with an inclination of 45 degrees. When passing through the quarter-wave plate 23 having the principal axis 23a, it changes to right (or left) circularly polarized light 15, and this right (or left) circularly polarized light 15 is reflected on the inner surface of the electrode 1 of the organic EL element 40, The light is reflected as left (or right) circularly polarized light 16 and again changes to lateral linearly polarized light 17 when passing through the quarter-wave plate 23, and is blocked from being emitted to the outside by the linearly polarizing plate 11.

【0040】こうした反射(戻り)防止のメカニズム
は、図21で述べたものと同様であるが、本実施例で用い
る1/4波長板23は、図1に示す如く、複屈折特性の異
なる2枚の複屈折板21と複屈折板22とを貼り合わせて構
成されていることが特徴的であり、これにより、ほぼ可
視光全域で1/4波長の位相差が得ることができる。
The mechanism for preventing such reflection (return) is similar to that described in FIG. 21, but the quarter wave plate 23 used in this embodiment has a different birefringence characteristic as shown in FIG. It is characterized in that it is constituted by laminating a single birefringent plate 21 and a birefringent plate 22. With this, a phase difference of ¼ wavelength can be obtained in almost the entire visible light region.

【0041】図2は、図1に模式的に示した有機EL素
子40の具体例の要部を示す拡大断面図であり、透明基板
6の一方の面上には、ITO透明電極5、ホール輸送層
4、発光層3、電子輸送層2及び金属電極1が積層さ
れ、また、上記の複屈折板21と複屈折板22とは透明基板
6の光出射側に貼り合わされている。
FIG. 2 is an enlarged cross-sectional view showing a main part of a concrete example of the organic EL element 40 schematically shown in FIG. 1. On one surface of the transparent substrate 6, the ITO transparent electrode 5 and the holes are formed. The transport layer 4, the light emitting layer 3, the electron transport layer 2 and the metal electrode 1 are laminated, and the birefringent plate 21 and the birefringent plate 22 are attached to the light emitting side of the transparent substrate 6.

【0042】ここで、複屈折板21と22は、互いに板厚が
異なっていて、複屈折分散を異ならせている。そして、
位相差が相殺されるように貼り合わせると、2波長で位
相差量を任意の値にすることが可能である。3枚であれ
ば3波長と言うように、周波数によって色が変わるため
光学系におけるレンズの組み合わせで色収差を補正する
方法と同じように位相差を調節することができる。な
お、複屈折板21と複屈折板22との間及び複屈折板22と直
線偏光板11との間には、空間が存在していてもよい。
Here, the birefringence plates 21 and 22 have different plate thicknesses and different birefringence dispersions. And
If they are attached so that the phase difference is canceled, the amount of phase difference can be set to an arbitrary value at two wavelengths. If there are three pieces, since the color changes depending on the frequency, as in the case of three wavelengths, the phase difference can be adjusted in the same way as the method of correcting chromatic aberration by combining lenses in the optical system. Spaces may exist between the birefringent plate 21 and the birefringent plate 22 and between the birefringent plate 22 and the linear polarizing plate 11.

【0043】ここで、位相差板(複屈折板)の位相差Δ
ndと複屈折率(ne 、no )との間には、一般に次の
関係が成り立つ。 Δnd=(ne −no )×d (但し、Δnは複屈折、ne は異常光の屈折率、no
常光の屈折率、dは板厚である。)
Here, the phase difference Δ of the phase difference plate (birefringence plate)
The following relationship generally holds between nd and the birefringence (n e , n o ). Δnd = (n e −n o ) × d (where Δn is birefringence, n e is the refractive index of extraordinary light, n o is the refractive index of ordinary light, and d is the plate thickness).

【0044】また、位相差板の持つ複屈折(Δn)は、
一般に次式で表されるように、波長(λ)に依存する。 Δn(λ)=A+B/(λ2 −λO 2 ) (但し、A、Bは定数、λO は吸収端である。)
The birefringence (Δn) of the retardation plate is
Generally, it depends on the wavelength (λ) as expressed by the following equation. Δn (λ) = A + B / (λ 2 −λ O 2 ) (where A and B are constants and λ O is an absorption edge).

【0045】このように、一般に、複屈折の位相差の波
長依存性はほぼ屈折率分散に等しく、複屈折位相差の波
長依存性を示す図3の曲線のような変化を呈する。即
ち、複屈折の位相差の波長依存性は、複屈折板21の複屈
折率分散曲線26及び複屈折板22の複屈折率分散曲線27共
に、短波長側の青色領域で大きく、長波長側の赤色領域
では小さくなっている。
As described above, generally, the wavelength dependence of the phase difference of the birefringence is almost equal to the refractive index dispersion, and exhibits a change like the curve of FIG. 3 showing the wavelength dependence of the birefringence phase difference. That is, the wavelength dependence of the phase difference of the birefringence is large in both the birefringence dispersion curve 26 of the birefringence plate 21 and the birefringence dispersion curve 27 of the birefringence plate 22 in the blue region on the short wavelength side, and the long wavelength side. Is smaller in the red area.

【0046】この場合、1/4波長板の理想的な複屈折
率分散特性は、各波長の1/4に相当する複屈折位相差
(即ち、例えば波長 400nmでの 100nmと波長 700nmでの
175nmとを結ぶ直線で表される値)であるから、図3の
曲線26及び27で示される複屈折板21及び複屈折板22の屈
折率分散では、1/4波長の位相差が得られる波長域は
狭くなる。
In this case, the ideal birefringence index dispersion characteristic of the 1/4 wavelength plate is that the birefringence phase difference corresponding to 1/4 of each wavelength (that is, 100 nm at a wavelength of 400 nm and 700 nm at a wavelength of 400 nm, for example).
175 nm), the phase difference of 1/4 wavelength can be obtained by the refractive index dispersion of the birefringent plate 21 and the birefringent plate 22 shown by the curves 26 and 27 in FIG. The wavelength range becomes narrow.

【0047】即ち、1/4波長板が、例えば図1及び図
2において、複屈折板21のみである場合は、図3におけ
る屈折率分散曲線26と1/4波長板の屈折率分散線25と
が交わる約500nm の波長域付近でしか1/4波長の位相
差が得られない。同様に、1/4波長板が被複屈折板22
のみである場合は、約460nm の波長域付近でしか1/4
波長の位相差が得られない。従って、そのままでは、1
/4波長の位相差が得られる波長領域が極めて限られた
ものとなり、図1に示した反射防止(戻り防止)の効果
を広波長域で得ることはできない。
That is, when the quarter-wave plate is, for example, only the birefringent plate 21 in FIGS. 1 and 2, the refractive index dispersion curve 26 in FIG. The phase difference of ¼ wavelength can be obtained only near the wavelength range of about 500 nm where Similarly, the quarter-wave plate is the birefringent plate 22.
If it is only 1/4, it is only around the wavelength range of about 460 nm.
The phase difference of wavelength cannot be obtained. Therefore, as it is, 1
The wavelength range in which the phase difference of / 4 wavelength is obtained is extremely limited, and the antireflection (return prevention) effect shown in FIG. 1 cannot be obtained in a wide wavelength range.

【0048】このように、1枚の複屈折板だけでは、1
/4波長の位相差が得られる波長域はかなり狭くなる。
従って、特定の波長でしか1/4波長の位相差が得られ
ず、その波長以外の波長光が入射したときには、上記し
た偏光方向の変化が得られないため、図4に示すよう
に、複屈折板が1枚の場合には反射率が曲線aのように
短波長側及び長波長側で大きく増加してしまう。
Thus, with only one birefringent plate,
The wavelength range in which the phase difference of / 4 wavelength is obtained becomes considerably narrow.
Therefore, the phase difference of ¼ wavelength can be obtained only at a specific wavelength, and when the light having a wavelength other than that wavelength is incident, the above-mentioned change in the polarization direction cannot be obtained. Therefore, as shown in FIG. When the number of the refraction plates is one, the reflectance greatly increases on the short wavelength side and the long wavelength side as shown by the curve a.

【0049】これに対し、複屈折板21と複屈折板22とを
図1及び図2に示したように貼り合わせると、図3に曲
線24で示すように特異な複屈折率分散特性を得ることが
できる。即ち、各複屈折板の厚みを変えて位相差を相殺
し、1/4波長位相差線(屈折率分散線)25にごく接近
した変化曲線を得ることができる。こうした重ね合わせ
効果自体は公知ではあるが、本発明者はその効果を有機
EL素子にはじめて適用し、非常に有用な結果を実現さ
せたのである。
On the other hand, when the birefringent plate 21 and the birefringent plate 22 are bonded together as shown in FIGS. 1 and 2, a peculiar birefringence dispersion characteristic is obtained as shown by a curve 24 in FIG. be able to. That is, the thickness of each birefringent plate is changed to cancel the phase difference, and a change curve very close to the quarter-wave retardation line (refractive index dispersion line) 25 can be obtained. Although such a superposition effect itself is publicly known, the present inventor first applied the effect to an organic EL device and realized a very useful result.

【0050】即ち、図3に示すように、ほぼ全波長域に
亘って(特に 460nm〜660nm 領域で)1/4波長の位相
差がほぼ得られ、図1に示した偏光方向の変化を確実に
実現し、反射光17が偏光板11を通過せずに十分に遮蔽さ
れることになる。従って、十分な反射防止効果が得ら
れ、図4における曲線bのように反射率を広波長域でほ
ぼゼロとし、しかも短波長側及び長波長側でも反射率が
非常に小さくなる。
That is, as shown in FIG. 3, a quarter-wave phase difference is almost obtained over almost the entire wavelength range (particularly in the range of 460 nm to 660 nm), and the change of the polarization direction shown in FIG. 1 is ensured. Therefore, the reflected light 17 is sufficiently shielded without passing through the polarizing plate 11. Therefore, a sufficient antireflection effect is obtained, the reflectance is almost zero in a wide wavelength range as shown by the curve b in FIG. 4, and the reflectance is extremely small on the short wavelength side and the long wavelength side.

【0051】図4は、複屈折位相差に伴う反射率の波長
による変化を示すグラフであるが、1/4波長の位相差
をほぼ可視光の中心波長である 550nmにした複屈折板を
100%反射率のミラー上に載せた場合の計算結果であ
る。この場合は、青色や赤色の波長域では反射が強く、
有機EL素子の表示面がいわゆるラベンダー色に見えて
しまう。そして、可視光域での平均的な反射率は5〜10
%程度である。
FIG. 4 is a graph showing the change in reflectance with wavelength due to the birefringence phase difference. A birefringence plate having a phase difference of 1/4 wavelength set to 550 nm which is the center wavelength of visible light is shown in FIG.
It is a calculation result when it is mounted on a mirror having 100% reflectance. In this case, the reflection is strong in the blue and red wavelength range,
The display surface of the organic EL element looks like a so-called lavender color. And the average reflectance in the visible light range is 5 to 10
%.

【0052】これに対し、本実施例のように2枚の複屈
折板が貼り合わされた場合は、2つの波長で1/4波長
の位相差に合わせることができ、その周辺でも1/4波
長からあまりずれない(図3参照)ため、可視光域のほ
ぼ全域で反射防止が可能になる。そして、上記と同様の
計算においてその平均的な反射率は1〜2%程度とな
り、目視的にもほとんど黒色に見える。
On the other hand, when two birefringent plates are stuck together as in the present embodiment, it is possible to match the phase difference of 1/4 wavelength between the two wavelengths, and the 1/4 wavelength around it. Since it does not deviate much from (see FIG. 3), it becomes possible to prevent reflection in almost the entire visible light region. Then, in the calculation similar to the above, the average reflectance is about 1 to 2%, and it looks almost black visually.

【0053】このことから、図1及び図2のように、可
視光の広い波長域で1/4波長の位相差に調節可能な複
屈折板21及び22を用いた円偏光手段49を有機EL素子40
の発光面に貼り合わせれば、可視光のほぼ全域での光の
戻りを阻止することができる。そして、この戻り防止効
果は、複屈折板21、22の各厚みdをコントロールして1
/4波長の位相差を確実に再現することによって、十分
なものとなる。
From this, as shown in FIGS. 1 and 2, the circular polarization means 49 using the birefringent plates 21 and 22 capable of adjusting the phase difference of ¼ wavelength in a wide wavelength range of visible light is used as the organic EL. Element 40
If it is adhered to the light emitting surface of, it is possible to prevent the return of light in almost all visible light. The return prevention effect is controlled by controlling the thickness d of each of the birefringent plates 21 and 22.
Sufficient reproduction is ensured by reproducing the phase difference of / 4 wavelength.

【0054】有機EL素子において、各層が平坦な膜と
して作製されることが高性能化には必要であり、その結
果、最後に作製される金属電極1はミラーの様に極めて
平坦で乱反射が起こらないようにし、そこでの光反射量
を十分にしている。しかしながら、このような鏡面があ
る場合には、外光の反射が生じ易く、また反射による表
示への悪影響(コントラストの劣化等)が目立ち易い。
しかし、反面、そうした鏡面が存在するため、上記した
幾何光学的な解析結果が良く成り立つことになり、円偏
光板49による反射防止効果が確実に得られ、有機EL素
子にとって極めて有効である。
In the organic EL element, it is necessary for each layer to be formed as a flat film for high performance, and as a result, the metal electrode 1 finally formed is extremely flat like a mirror and causes irregular reflection. The amount of light reflected there is sufficient. However, when such a mirror surface is present, external light is likely to be reflected, and the adverse effect on the display due to the reflection (such as deterioration of contrast) is conspicuous.
However, on the other hand, since such a mirror surface exists, the above-mentioned geometrical optical analysis result is well established, and the antireflection effect of the circularly polarizing plate 49 is surely obtained, which is extremely effective for the organic EL element.

【0055】次に、本実施例による有機EL素子40を更
に詳細に説明する。図5は、上記のように構成された有
機EL素子40の概略平面図である。透明基板6の上面に
はITO透明電極5が同一パターンでストライプ状に形
成され、これらの透明電極5の上にはこれらの電極とマ
トリクス状に直交してSiO2 絶縁膜9が同一パターン
でストライプ状に形成されている。そして、絶縁膜9−
9間には、ホール輸送層4、発光層3、電子輸送層2、
金属電極1がこの順でほぼ同じパターンに積層され、こ
の積層体が絶縁膜9と同一方向にて同一パターンでスト
ライプ状に形成されている。
Next, the organic EL element 40 according to this embodiment will be described in more detail. FIG. 5 is a schematic plan view of the organic EL element 40 configured as above. On the upper surface of the transparent substrate 6, ITO transparent electrodes 5 are formed in the same pattern in a stripe shape, and on the transparent electrodes 5, a SiO 2 insulating film 9 is formed in the same pattern in a matrix orthogonal to these electrodes in a stripe shape. It is formed into a shape. Then, the insulating film 9-
Between 9, the hole transport layer 4, the light emitting layer 3, the electron transport layer 2,
The metal electrodes 1 are laminated in this order in substantially the same pattern, and this laminated body is formed in the same pattern as the insulating film 9 in the same pattern in a stripe shape.

【0056】このようにマトリクス状に各層が積層され
た透明基板6の面には、図6に示すように、上記した複
屈折板21と複屈折板22とを貼り合わせた1/4波長板2
3、及び直線偏光板11からなる円偏光手段39が貼り付け
られている。その状態を示した図6は、図5のA−A線
断面におけるa部の拡大図である。上下の電極の交差部
が個々の画素PXである。そして、このa部のB−B線
拡大断面図を横断面図として示したのが図7である。
As shown in FIG. 6, on the surface of the transparent substrate 6 in which the respective layers are laminated in a matrix in this way, as shown in FIG. 6, a quarter-wave plate in which the birefringent plate 21 and the birefringent plate 22 are bonded together. 2
A circular polarization means 39 composed of 3 and a linear polarization plate 11 is attached. FIG. 6 showing the state is an enlarged view of the portion a in the cross section taken along the line AA of FIG. The intersection of the upper and lower electrodes is an individual pixel PX. Then, FIG. 7 shows an enlarged cross-sectional view taken along line BB of the portion a as a cross-sectional view.

【0057】次に、図5〜図7に示した本実施例による
有機EL素子を図8〜図16に示す製造工程について更に
詳細に説明する。
Next, the manufacturing steps shown in FIGS. 8 to 16 for the organic EL device according to this embodiment shown in FIGS. 5 to 7 will be described in more detail.

【0058】図8は、製造工程を示す要部の拡大断面図
である。図8に示すように、透明基板6(厚さT=1.1m
m のフロートガラス)の片面にITO(Indium Tin Oxi
de)をスパッタ法により成膜した後、図9(図8のIX−
IX線断面図)のように、エッチングにより、透明電極5
を幅w1 =2mm、ピッチw2 =2.54mmで8本を単位とし
てストライプパターンに形成する。これら透明電極5は
それぞれ、1本の両端の抵抗を約 300Ωとする。
FIG. 8 is an enlarged cross-sectional view of the main part showing the manufacturing process. As shown in FIG. 8, the transparent substrate 6 (thickness T = 1.1 m
ITO (Indium Tin Oxi) on one side of the float glass of m
de) by the sputtering method, and then, as shown in FIG.
As shown in the sectional view of line IX), the transparent electrode 5
Is formed into a stripe pattern with a width w 1 = 2 mm and a pitch w 2 = 2.54 mm in units of 8 pieces. Each of these transparent electrodes 5 has a resistance of about 300Ω at both ends.

【0059】次に、図10のように、後述する有機積層体
を絶縁するためのマスクとして、SiO2 絶縁膜9をS
iO2 の全面蒸着後のエッチングで例えば10本のストラ
イプ状に形成する。その幅w3 は1mm、ピッチw4 は2.
54mm、膜厚tは 100nmとする。
Next, as shown in FIG. 10, the SiO 2 insulating film 9 is used as a mask to insulate the organic laminated body described later.
For example, 10 stripes are formed by etching after vapor deposition of iO 2 . Its width w 3 is 1 mm and its pitch w 4 is 2.
The thickness is 54 mm and the film thickness t is 100 nm.

【0060】このSiO2 の蒸着は、図11に示すような
真空蒸着装置32を使用する。この装置の内部には、アー
ム33の下に固定された一対の支持手段34が設けられ、こ
の双方の固定手段34、34の間には、透明基板6を下向き
にし、後述するマスク37、38又は39をセットできるステ
ージ機構(図示省略)が設けられている。そして、透明
基板及びマスクの下方には、所定個数(5個)の各種蒸
着源35を配置する。蒸着源35は、電源36による抵抗加熱
方式又は電子ビーム加熱方式で加熱される。
The vapor deposition of SiO 2 uses a vacuum vapor deposition apparatus 32 as shown in FIG. A pair of supporting means 34 fixed below the arm 33 is provided inside the device, and the transparent substrate 6 is faced downward between the fixing means 34, 34, and masks 37, 38 described later are provided. Alternatively, a stage mechanism (not shown) capable of setting 39 is provided. Then, a predetermined number (five) of various vapor deposition sources 35 are arranged below the transparent substrate and the mask. The vapor deposition source 35 is heated by a resistance heating method or an electron beam heating method by a power source 36.

【0061】SiO2 絶縁膜9を形成した透明基板6
は、有機溶剤、紫外線(UV)オゾン処理により表面を
十分に清浄した後、上記真空蒸着装置32により赤
(R)、緑(G)、青(B)の3色を発光するストライ
プを隣接して形成するため、有機層及び金属電極を各色
毎に同じ蒸着マスクを用いて次の手順で行った。
Transparent substrate 6 on which SiO 2 insulating film 9 is formed
After cleaning the surface thoroughly with an organic solvent and ultraviolet (UV) ozone treatment, the vacuum vapor deposition device 32 adjoins the stripes that emit three colors of red (R), green (G), and blue (B). The organic layer and the metal electrode for each color were formed by the following procedure using the same vapor deposition mask.

【0062】まず、真空蒸着装置32の中に透明基板6と
赤(R)色用のマスク37をセットする。図12は、その透
明基板6とマスク37の位置関係を示した一部分の拡大断
面図である。図示のように、蒸着は絶縁膜9−9間の領
域にマスク37のスリット状の開口部37aを位置合わせ
(マスク掛け)する。マスク37の開口部37aは、絶縁膜
9−9間の領域に対して3本おきの間隔で形成されてい
る。従って、このマスク掛けにより、赤(R)の発光体
領域以外は遮蔽される。
First, the transparent substrate 6 and the red (R) color mask 37 are set in the vacuum deposition apparatus 32. FIG. 12 is a partial enlarged cross-sectional view showing the positional relationship between the transparent substrate 6 and the mask 37. As shown in the figure, the vapor deposition aligns (masks) the slit-shaped opening 37a of the mask 37 in the region between the insulating films 9-9. The openings 37a of the mask 37 are formed at intervals of every three holes with respect to the region between the insulating films 9-9. Therefore, this masking shields the region other than the red (R) light emitter region.

【0063】このように、赤(R)色用のマスク37を掛
けてから、真空蒸着装置を3×10-6Torrの真空度に保
ち、下記構造式のトリフェニルジアミン誘導体TPD
(N,N’−ビス(3−メチルフェニル)1,1’−ビ
フェニル−4,4’−ジアミン)を蒸着レート 0.3nm/s
で50nmの厚さに蒸着し、ホール輸送層4Rを形成する。
As described above, after the red (R) color mask 37 was applied, the vacuum deposition apparatus was maintained at a vacuum degree of 3 × 10 -6 Torr, and the triphenyldiamine derivative TPD of the following structural formula was used.
(N, N'-bis (3-methylphenyl) 1,1'-biphenyl-4,4'-diamine) deposition rate 0.3 nm / s
To a thickness of 50 nm to form a hole transport layer 4R.

【0064】続いて、同じマスク37をそのまま用いて、
下記構造式のAlq3 (トリス−(8−ヒドロキシキノ
リン)アルミニウム)とレーザ色素DCM(4−ジシア
ノメチレン−6−(p−ジメチルアミノスチリル)−2
−メチル−4H−ピラン)をそれぞれ 0.3nm/s及び0.03
nm/sの蒸着レートで20nmの厚さに蒸着し、発光層3Rを
ホール輸送層4R上にほぼ同じパターンに積層する。
Then, using the same mask 37 as it is,
Alq 3 (tris- (8-hydroxyquinoline) aluminum) of the following structural formula and laser dye DCM (4-dicyanomethylene-6- (p-dimethylaminostyryl) -2
-Methyl-4H-pyran) at 0.3 nm / s and 0.03, respectively.
The light emitting layer 3R is vapor-deposited at a vapor deposition rate of nm / s to a thickness of 20 nm, and the light emitting layer 3R is laminated on the hole transport layer 4R in substantially the same pattern.

【0065】続いて、同じマスク37をそのまま用いて、
下記構造式のAlq3 (トリス−(8−ヒドロキシキノ
リン)アルミニウム)を蒸着レート 0.3nm/sで40nmの厚
さに蒸着し、電子輸送層2Rを発光層3R上にほぼ同じ
パターンに積層し、最後にマグネシウムと銀を蒸着レー
ト2nm/sの共蒸着で 200nmの厚さに蒸着し、電子輸送層
2R上にほぼ同じパターンに電極1を積層する。
Then, using the same mask 37 as it is,
Alq 3 (tris- (8-hydroxyquinoline) aluminum) having the following structural formula was vapor deposited at a vapor deposition rate of 0.3 nm / s to a thickness of 40 nm, and the electron transport layer 2R was laminated on the light emitting layer 3R in substantially the same pattern, Finally, magnesium and silver are vapor-deposited to a thickness of 200 nm by co-evaporation at a vapor deposition rate of 2 nm / s, and the electrode 1 is laminated on the electron transport layer 2R in substantially the same pattern.

【0066】[0066]

【化1】 Embedded image

【0067】[0067]

【化2】 Embedded image

【0068】[0068]

【化3】 Embedded image

【0069】次に、図13のように、緑(G)色用のマス
ク38に掛け替える。このマスク38は、図示のように、上
記の赤(R)色用のマスク37による積層領域に隣接する
絶縁膜9−9間の領域にスリット状の開口部38aが一致
するように、位置合わせされる。マスク38は上記した赤
(R)色用のマスク37と同じパターンに形成され、緑
(G)以外の発光領域を遮蔽する。
Next, as shown in FIG. 13, the mask is changed to the mask 38 for green (G) color. As shown in the drawing, the mask 38 is aligned so that the slit-shaped opening 38a is aligned with the region between the insulating films 9-9 adjacent to the laminated region formed by the red (R) color mask 37. To be done. The mask 38 is formed in the same pattern as the mask 37 for the red (R) color described above, and shields the light emitting regions other than the green (G).

【0070】このようにして緑(G)色用のマスク38掛
けをしてから、真空蒸着装置を3×10-6Torrの真空度に
保ち、まず、上記したトリフェニルジアミン誘導体TP
Dを蒸着レート 0.3nm/sで50nmの厚さに蒸着し、ホール
輸送層4Gを形成する。
After the mask 38 for the green (G) color was applied in this manner, the vacuum deposition apparatus was maintained at a vacuum degree of 3 × 10 -6 Torr, and first, the triphenyldiamine derivative TP described above was used.
D is vapor deposited at a vapor deposition rate of 0.3 nm / s to a thickness of 50 nm to form a hole transport layer 4G.

【0071】続いて、同じマスク38をそのまま用いて、
上記したAlq3 を蒸着レート 0.3nm/sで50nmの厚さに
蒸着し、ホール輸送層4G上にほぼ同じパターンに発光
層3Gを積層する。この発光層は電子輸送層2Gを兼用
するものである。
Then, using the same mask 38 as it is,
The above Alq 3 is vapor-deposited at a vapor deposition rate of 0.3 nm / s to a thickness of 50 nm, and the light emitting layer 3G is laminated on the hole transport layer 4G in substantially the same pattern. This light emitting layer also serves as the electron transport layer 2G.

【0072】更に、この上にマグネシウムと銀を蒸着レ
ート2nm/sの共蒸着でそれぞれ 200nmの厚さに蒸着し、
発光層3G(及び電子輸送層2G)とほぼ同じパターン
に電極1を積層する。
Further, magnesium and silver were vapor-deposited on this by co-evaporation at a vapor deposition rate of 2 nm / s to a thickness of 200 nm,
The electrode 1 is laminated in substantially the same pattern as the light emitting layer 3G (and the electron transport layer 2G).

【0073】次に、図14のように、青(B)色用のマス
ク39に掛け替える。このマスク39は、図示のように、上
記の緑(G)色用のマスク38による積層領域に隣接する
絶縁膜9−9間の領域にスリット状の開口部39aが一致
するように、位置合わせされる。マスク39は赤(R)色
用及び緑(G)色用のマスクと同じパターンに形成さ
れ、青(B)以外の発光領域を遮蔽する。
Next, as shown in FIG. 14, the mask 39 is changed to the blue (B) color mask 39. As shown in the drawing, the mask 39 is aligned so that the slit-shaped opening 39a is aligned with the region between the insulating films 9-9 adjacent to the laminated region formed by the mask 38 for the green (G) color. To be done. The mask 39 is formed in the same pattern as the masks for red (R) color and green (G) color, and shields the light emitting regions other than blue (B).

【0074】このように青(B)色用のマスク39を掛け
てから、真空蒸着装置を3×10-6Torrの真空度に保ちな
がら、まず上記したトリフェニルジアミン誘導体TPD
を蒸着レート 0.3nm/sで50nmの厚さに蒸着し、ホール輸
送層4Bを形成する。
After the mask 39 for the blue (B) color is applied in this manner, the above-mentioned triphenyldiamine derivative TPD is first maintained while the vacuum deposition apparatus is kept at a vacuum degree of 3 × 10 -6 Torr.
To a thickness of 50 nm at a deposition rate of 0.3 nm / s to form a hole transport layer 4B.

【0075】続いて、同じマスク39をそのまま用いて、
下記構造式のZn(oxz)2 (2−(o−ヒドロキシ
フェニル)−ベンズオキサゾールの亜鉛錯体)を蒸着レ
ート0.3nm/sで50nmの厚さに蒸着し、ホール輸送層4B
上にほぼ同じパターンに発光層3Bを積層する。この発
光層は電子輸送層2Bを兼用するものである。
Then, using the same mask 39 as it is,
Zn (oxz) 2 (zinc complex of 2- (o-hydroxyphenyl) -benzoxazole) having the following structural formula was vapor-deposited at a vapor deposition rate of 0.3 nm / s to a thickness of 50 nm to form a hole transport layer 4B.
The light emitting layer 3B is laminated on the top in substantially the same pattern. This light emitting layer also serves as the electron transport layer 2B.

【0076】最後に、マグネシウムと銀を蒸着レート2
nm/sの共蒸着で 300nmの厚さに蒸着し、発光層3B(及
び電子輸送層2B)上にほぼ同じパターンに電極1を積
層する。
Finally, the deposition rate of magnesium and silver is 2
It is vapor-deposited to a thickness of 300 nm by co-evaporation of nm / s, and the electrode 1 is laminated on the light emitting layer 3B (and the electron transport layer 2B) in substantially the same pattern.

【0077】[0077]

【化4】 Embedded image

【0078】図15は、上記した製造工程において、蒸着
により有機層から電極(陰極)までを各色毎に所定の色
用の同じマスクを使用して積層して得られる有機EL素
子を示す。このようにして得られた有機EL素子の基板
6の裏面上に、図16の如く、複屈折板21、22及び直線偏
光板11を順次貼り合わせ、円偏光板49を一体に形成し
た。
FIG. 15 shows an organic EL device obtained by stacking organic layers to electrodes (cathodes) by vapor deposition using the same mask for each color in the above manufacturing process. On the back surface of the substrate 6 of the organic EL device thus obtained, the birefringent plates 21 and 22 and the linear polarizing plate 11 were sequentially laminated as shown in FIG. 16 to integrally form a circular polarizing plate 49.

【0079】円偏光板49として利用したものは、複屈折
板21、22からなる2枚積層広帯域1/4波長板23(日東
電工株式会社製)と直線偏光板11を貼り合わせたもので
ある。これらの材料は、方解石や雲母等の光学結晶薄板
からなる。
What was used as the circularly polarizing plate 49 is one in which a two-layer laminated broadband quarter-wave plate 23 (manufactured by Nitto Denko Corporation) consisting of birefringent plates 21 and 22 and a linear polarizing plate 11 are bonded together. . These materials are optical crystal thin plates such as calcite and mica.

【0080】以上の製造プロセスにおいて、マスクの掛
け替えは、真空状態下で真空中のまま、或いは真空を破
って蒸着膜が大気に曝される状態下で行ったが、初期の
発光性能に大きな差はなかった。
In the above manufacturing process, the mask was changed under the vacuum condition in the vacuum or in the condition that the vacuum film was broken and the vapor deposition film was exposed to the atmosphere. There was no.

【0081】次に、上記に得られた有機EL素子40につ
いて、外光の反射率の測定を行った。
Next, with respect to the organic EL element 40 obtained above, the reflectance of external light was measured.

【0082】即ち、He−Neレーザ及びArイオンレ
ーザを有機EL素子の透明基板の発光面側から照射した
ところ、上記した円偏光手段49を用いない場合は、反射
率が75%以上であったが、上記のように円偏光手段49を
貼り合わせて作製した本実施例のものは反射率は2%以
下まで低下することが確認された。
That is, when the He-Ne laser and the Ar ion laser were irradiated from the light emitting surface side of the transparent substrate of the organic EL element, the reflectance was 75% or more when the above circular polarization means 49 was not used. However, it was confirmed that the reflectance of the present example manufactured by laminating the circular polarization means 49 as described above decreased to 2% or less.

【0083】また、これらの有機EL素子の非発光状態
を測定して比較した。測定方法としては、40Wの蛍光灯
4本を天井で点灯させ、その2m下方で有機EL素子を
ほぼ真上向きにし、覗き込むようにして発光面(パネ
ル)を見た。
Further, the non-light emitting states of these organic EL devices were measured and compared. As a measuring method, four 40 W fluorescent lamps were lit on the ceiling, the organic EL element was directed almost directly upward 2 m below, and the light emitting surface (panel) was looked into to look into it.

【0084】その結果、非発光状態では、円偏光手段49
を用いないものは、金属電極の金属光沢が見られ、天井
の像が写っているのが見られたが、本実施例のものは金
属電極がほぼ黒色に観測された。
As a result, in the non-light emitting state, the circular polarization means 49
In the case of not using, the metallic luster of the metal electrode was seen and the image of the ceiling was seen, but in the case of this example, the metal electrode was observed to be almost black.

【0085】そして、有機EL素子を発光させた状態で
は、本実施例のものは、赤、緑、青の各色の発光色の色
純度が良く、発光部分周囲の非発光部分が黒く見え、発
光部分と非発光部分との明暗がくっきりと明確に観察さ
れ、コントラストが非常に良好であった。一方、円偏光
手段49を用いていないものは、発光輝度は本実施例のも
のに比べて2倍以上あったが、色がはっきりせず、ま
た、外界の像が映し出され、非常に見づらいものであっ
た。
Then, when the organic EL element is made to emit light, in the case of this embodiment, the color purity of the emitted colors of red, green and blue is good, and the non-emissive portion around the light emitting portion looks black, and the light is emitted. The contrast between the part and the non-light emitting part was clearly observed, and the contrast was very good. On the other hand, in the case where the circularly polarizing means 49 is not used, the emission brightness is twice or more as compared with that of the present embodiment, but the color is not clear and the image of the outside world is projected, which is very difficult to see. Met.

【0086】このように、本実施例によれば、複屈折板
21と複屈折板22とを貼り合わせた1/4波長板23及び直
線偏光板11で構成された円偏光手段49が有機EL素子の
透明基板の発光面とは反対側の面上に設けられているた
め、入射した外部光の有機EL素子内部での反射を大幅
に低下させ、可視光域のほぼ全域で反射防止が可能とな
る。従って、素子の発光状態においても、発光部分と非
発光部がはっきりと見分けられ、コントラストが非常に
良好であり、発光色の色純度が良くなる。
As described above, according to this embodiment, the birefringent plate
A circular polarization means 49 composed of a quarter-wave plate 23 in which 21 and a birefringent plate 22 are bonded together and a linear polarization plate 11 is provided on the surface of the organic EL element opposite to the light emitting surface of the transparent substrate. Therefore, the reflection of the incident external light inside the organic EL element is significantly reduced, and the reflection can be prevented in almost the entire visible light region. Therefore, even in the light emitting state of the element, the light emitting portion and the non-light emitting portion can be clearly distinguished, the contrast is very good, and the color purity of the emitted color is good.

【0087】上記した本実施例による有機EL素子25を
いわゆるダイナミックドライブ方式で、電流制御回路部
を有する図17に示す駆動回路により点灯させた。
The organic EL element 25 according to the present embodiment described above was lit by the so-called dynamic drive method by the drive circuit shown in FIG. 17 having the current control circuit section.

【0088】この駆動回路は、オペアンプOPAを用い
て、コラムを流れる素子電流(画素PXを流れる電流)
iを外部からの輝度信号によって制御できるように構成
したものである。
This drive circuit uses an operational amplifier OPA to operate a device current flowing through a column (current flowing through a pixel PX).
i is configured to be controlled by a luminance signal from the outside.

【0089】即ち、ストライプ状のコラム電極(上記し
た電極1)とストライプ状のライン電極(上記した透明
電極5)とが上下でマトリクス状に交差して、この交差
位置にそれぞれのピクセル(画素)PXがパッシブマト
リクス型構造に形成されている。各ピクセルPXは、順
方向に接続されたダイオードDとして等価的にみなせ
る。そして、一方のコラム電極1はそれぞれの電流制御
回路部41に接続されると共に、他方のライン電極5はそ
れぞれ駆動電源VC に接続され、制御信号CSによって
駆動される。この駆動回路とその動作を更に詳細に説明
する。
That is, the stripe-shaped column electrodes (the above-mentioned electrodes 1) and the stripe-shaped line electrodes (the above-mentioned transparent electrodes 5) vertically intersect each other in a matrix, and each pixel (pixel) is located at this intersection. The PX is formed in a passive matrix type structure. Each pixel PX can be regarded equivalently as a diode D connected in the forward direction. Then, one column electrode 1 is connected to each current control circuit portion 41, and the other line electrode 5 is connected to the driving power supply V C, and is driven by the control signal CS. This drive circuit and its operation will be described in more detail.

【0090】電流制御回路部41は、多数のピクセルPX
のそれぞれに流れる電流iを電圧Vm としてモニターで
きる基準抵抗Rref と;この基準抵抗Rref とピクセル
PXとの間に接続された電流制御素子としてのFET(F
ield Effect Transistor)と;前記のモニターされた電
圧Vm と電流制御回路部41に対し外部のPROM(Progr
ammable Read Only Memory)から供給される輝度信号電
圧VS とを比較してFETに対する制御電圧VCSを出力
する演算増幅素子(オペアンプ)OPAと;を有してい
る。
The current control circuit section 41 includes a large number of pixels PX.
A reference resistor R ref capable of monitoring the current i flowing in each of the pixels as a voltage V m ; and a FET (F as a current control element connected between the reference resistor R ref and the pixel PX).
and an external PROM (Progr) for the monitored voltage V m and current control circuit section 41.
an operational amplifier element (operational amplifier) OPA for comparing a luminance signal voltage V S supplied from an ammable read only memory) and outputting a control voltage V CS for the FET.

【0091】PROMには、有機EL素子40で表示した
い映像情報が予めプログラムされてメモリされている。
これは、パーソナルコンピュータPCで操作されるマイ
クロプロセッシングユニットMPUからの指示によりP
ROMに入力され、上記映像情報がサンプリングされて
所定の輝度信号電圧VS がPROMから出力される。こ
の輝度信号電圧は抵抗器rで所望の電圧値に調整され、
この調整された電圧VSAがオペアンプOPAの+端子に
入力される。
In the PROM, image information to be displayed on the organic EL element 40 is programmed and stored in advance.
This is P by the instruction from the micro processing unit MPU operated by the personal computer PC.
The video information is input to the ROM, the video information is sampled, and a predetermined luminance signal voltage V S is output from the PROM. This luminance signal voltage is adjusted to a desired voltage value by the resistor r,
This adjusted voltage V SA is input to the + terminal of the operational amplifier OPA.

【0092】一方、ピクセルPXを点灯させるために、
電源VC とピクセルPXとの間に駆動トランジスタ(こ
こではNPNバイポーラトランジスタ)Trが接続さ
れ、このトランジスタのベースにスイッチング用の制御
電圧CSが選択的に印加され、各ライン電極5が逐次切
り替えられる。従って、制御電圧CSによってトランジ
スタTrがオンしたタイミングで、そのライン電極5に
電源電圧VC が印加され、これによってコラム電極1と
の間に電流iが流れ、ピクセルPXが点灯することにな
る。
On the other hand, in order to turn on the pixel PX,
A drive transistor (here, an NPN bipolar transistor) Tr is connected between the power supply V C and the pixel PX, a control voltage CS for switching is selectively applied to the base of this transistor, and each line electrode 5 is sequentially switched. . Therefore, at the timing when the transistor Tr is turned on by the control voltage CS, the power supply voltage V C is applied to the line electrode 5, whereby the current i flows between the line electrode 5 and the column electrode 1 and the pixel PX is turned on.

【0093】こうした点灯動作は、ライン電極5に電源
電圧VC が印加されると同時に、上記した輝度信号電圧
によるFETのオン状態が続く間(即ち、電流iが流れ
る期間中)は継続され、こうした動作が各ライン毎に輝
度信号に対応して行われるため、目的とするディスプレ
イ画像がEL素子40から得られる。
Such a lighting operation is continued while the power supply voltage V C is applied to the line electrode 5 and at the same time as the ON state of the FET due to the above-mentioned luminance signal voltage continues (that is, during the period in which the current i flows). Since such an operation is performed for each line corresponding to the luminance signal, a target display image can be obtained from the EL element 40.

【0094】この場合、ピクセルPXを通して流れる電
流iは、そこに要求される発光輝度に相当して流れるよ
うにしているが、これは上記の電流制御回路部41によっ
て実現可能である。これを以下に説明する。
In this case, the current i flowing through the pixel PX is made to flow corresponding to the emission brightness required there, but this can be realized by the current control circuit section 41. This will be described below.

【0095】オペアンプOPAの+端子には、上記した
輝度信号電圧VSAが入力されると共に、その−端子に
は、基準抵抗Rref を電流iが流れることにより、基準
抵抗R ref の両端に生じる電位差(上記のモニターされ
た検出電圧Vm )が入力される。
The positive terminal of the operational amplifier OPA has the above-mentioned structure.
Luminance signal voltage VSAIs input and its − terminal
Is the reference resistance RrefThe current i flows through the
Resistance R refPotential difference across both ends of the
Detection voltage Vm) Is entered.

【0096】そして、VSA>Vm の条件下では、オペア
ンプOPAの出力VCSが上昇し、FETのゲート電位V
G が上昇し、Vm −VG が小さくなってFETのソース
−ドレイン抵抗を下げて電流iを増加させる。このよう
にiが増加してi・Rref =Vm がVSAに達すると、そ
れ以上はVCSが上昇しなくなり、FETの抵抗値が安定
し、iは一定値Vm /Rref に安定する。
Under the condition of V SA > V m , the output V CS of the operational amplifier OPA rises and the gate potential V FET is
G rises and V m −V G becomes smaller, lowering the source-drain resistance of the FET and increasing the current i. In this way, when i increases and i · R ref = V m reaches V SA , V CS does not rise any more and the resistance value of the FET stabilizes, and i becomes a constant value V m / R ref . Stabilize.

【0097】従って、PROMからの輝度信号電圧が印
加されている間は、その輝度信号電圧VSAと検出電圧V
m とが一致するまで、可変抵抗としてのFETを介して
電流iが流れ、ピクセルPXには目的とする電流量とな
るまで電流が流れるから、所望の発光輝度が常に得られ
ることになる。
Therefore, while the brightness signal voltage from the PROM is being applied, the brightness signal voltage V SA and the detection voltage V SA are applied.
The current i flows through the FET as the variable resistance until m matches, and the current flows through the pixel PX until the target current amount is reached, so that a desired light emission brightness is always obtained.

【0098】電源VC 側のライン電極5の切り替え動作
を説明すると、クロックジェネレータからなる発振器C
LKからの発振パルスがカウンタCT1 に入力され、同
じビット数のカウンタCT2 との組み合わせによって所
定のカウント数毎にスイッチング用ラインセレクタLS
が作動され、所定の選択ラインにTTLレベルの電圧が
出力される。この出力は、インバータINVによって反
転され、この反転出力が制御信号CSとしてトランジス
タTrのベースに印加されるが、この印加によってオン
したトランジスタTrを介して電源電圧VC が上述した
ようにライン電極5に供給される。
The switching operation of the line electrode 5 on the power supply V C side will be described below.
The oscillation pulse from LK is input to the counter CT 1 and, in combination with the counter CT 2 having the same number of bits, the switching line selector LS for each predetermined count number.
Is operated, and a TTL level voltage is output to a predetermined selection line. This output is inverted by the inverter INV, and the inverted output is applied to the base of the transistor Tr as the control signal CS. The power supply voltage V C is applied to the line electrode 5 via the transistor Tr turned on by this application. Is supplied to.

【0099】上記したように、図17の駆動回路によっ
て、画素PXを流れる電流量を制御するため、各画素の
輝度を正確にコントロールし、常に鮮明な発光(画像表
示)を実現することができる。
As described above, since the amount of current flowing through the pixel PX is controlled by the drive circuit of FIG. 17, it is possible to accurately control the brightness of each pixel and always realize clear light emission (image display). .

【0100】なお、図17の駆動回路は一例であって、例
えば、電流制御回路部41に電圧ホールド回路を設けた
り、構成素子を適宜変更する等、電流制御を一層正確に
行うように構成することができる。また、輝度信号電圧
を外部から供給するための回路も種々変更してよく、ラ
インセンサLSと連動してPROMを作動させてもよ
い。また、PROMでは映像信号がサンプルホールドさ
れるか、或いはサンプリング後にA/D変換されてよ
い。更に、これらの変更を含む図17の駆動回路を設けず
に、従来から行われている印加電圧の制御による輝度制
御を行うこともできる。
The drive circuit shown in FIG. 17 is an example, and the current control circuit section 41 is provided with a voltage hold circuit, the constituent elements are appropriately changed, or the like so that the current control is performed more accurately. be able to. Further, the circuit for supplying the luminance signal voltage from the outside may be variously modified, and the PROM may be operated in conjunction with the line sensor LS. In the PROM, the video signal may be sampled and held, or may be A / D converted after sampling. Further, it is also possible to perform the brightness control by controlling the applied voltage which is conventionally performed without providing the drive circuit of FIG. 17 including these changes.

【0101】上記の駆動回路により一画素当たり、緑色
の画素には15〜20ボルト、赤色と青色の画素には20〜30
ボルトの電圧を60μs〜数秒間隔で逐次パルス点灯でき
ることが確認された。
With the above driving circuit, each pixel has a voltage of 15 to 20 volts for a pixel, and red and blue pixels have a voltage of 20 to 30 volts.
It was confirmed that the voltage of the volt can be sequentially pulsed at intervals of 60 μs to several seconds.

【0102】図18及び図19は、本発明を有機EL素子に
適用した第2及び第3の実施例をそれぞれ示す要部の拡
大断面図である。
18 and 19 are enlarged cross-sectional views of the essential parts showing the second and third embodiments of the present invention applied to an organic EL device, respectively.

【0103】これらの実施例の場合は、上述した第1の
実施例が円偏光手段49を基板6の発光面とは反対側に設
けたのに対し、図示の如く、円偏光手段49を透明基板6
の内面と有機層との間に設け、基板6が円偏光板49を兼
ねている(或いは、円偏光板49が基板6を兼ねている)
ようにして、有機EL素子51を構成したものである。
In the case of these embodiments, while the circular polarization means 49 is provided on the side opposite to the light emitting surface of the substrate 6 in the above-mentioned first embodiment, as shown in the figure, the circular polarization means 49 is transparent. Board 6
The substrate 6 also serves as the circularly polarizing plate 49 (or the circularly polarizing plate 49 also serves as the substrate 6) provided between the inner surface of the substrate and the organic layer.
In this way, the organic EL element 51 is configured.

【0104】即ち、図18の例では、透明基板6と、有機
層(ITO透明電極、ホール輸送層4、発光層3、電子
輸送層2)及び電極層1からなる積層体との間に、円偏
光板49を設けている。円偏光板49は、上述した第1の実
施例の場合と同様に、反射面となる電極1側からみて、
複屈折板21、複屈折板22、直線偏光板11の順に貼り合わ
されたものである。
That is, in the example of FIG. 18, between the transparent substrate 6 and the laminated body composed of the organic layer (ITO transparent electrode, hole transport layer 4, light emitting layer 3, electron transport layer 2) and electrode layer 1, A circular polarization plate 49 is provided. The circularly polarizing plate 49 is, as in the case of the above-described first embodiment, seen from the side of the electrode 1 which is the reflecting surface,
The birefringent plate 21, the birefringent plate 22, and the linearly polarizing plate 11 are laminated in this order.

【0105】また、図19の有機EL素子52の場合は、有
機層のうち、電子輸送層2が発光層を兼ねているもので
あり(これは、図2の実施例にも適用してよい。)、こ
れにも本発明を適用することが可能であり、円偏光手段
49の配置は図18の場合と同じである。
In the case of the organic EL element 52 of FIG. 19, the electron transport layer 2 of the organic layers also serves as the light emitting layer (this may be applied to the embodiment of FIG. 2 as well). .), The present invention can be applied to the circular polarization means.
The arrangement of 49 is the same as in the case of FIG.

【0106】有機EL素子の製造工程において、透明基
板6が最も高温に加熱されるのは、ITO透明電極5を
基板6上に蒸着で積層する工程である。但し、ITO透
明電極5は、イオンアシスト蒸着法やスパッタリング法
により、透明基板6を強制的に加熱しなくてもかなり低
抵抗値の成膜が可能である。
In the manufacturing process of the organic EL device, the transparent substrate 6 is heated to the highest temperature in the process of depositing the ITO transparent electrode 5 on the substrate 6 by vapor deposition. However, the ITO transparent electrode 5 can be formed by an ion assisted vapor deposition method or a sputtering method with a considerably low resistance value without forcibly heating the transparent substrate 6.

【0107】従って、図18又は図19の有機EL素子の作
製において、基板6上にフィルム状の円偏光板49を貼り
付けた後、上記の方法により、温度80℃以下で、 150nm
厚、40Ω/cm2 のITO透明電極を形成することが可能
であるから、この温度条件下では円偏光板49のフィルム
耐熱性は十分であり、円偏光板49は変質することなく素
子内に保持されることになる。
Therefore, in the production of the organic EL device shown in FIG. 18 or FIG. 19, after the film-shaped circularly polarizing plate 49 was attached on the substrate 6, the temperature was set to 80 ° C. or lower at 150 nm by the above method.
Since it is possible to form an ITO transparent electrode having a thickness of 40 Ω / cm 2 , the film heat resistance of the circularly polarizing plate 49 is sufficient under these temperature conditions, and the circularly polarizing plate 49 can be formed in the element without deteriorating. Will be retained.

【0108】従って、透明基板6に円偏光板49を設け、
この上に直接有機EL素子を形成することが可能とな
る。実際に、本実施例において、透明基板6上に2枚積
層型広帯域の複屈折板23(日東電工株式会社製)及び直
線偏光板11を形成した面上に、ITO透明電極5をスパ
ッタリング法で 150nmの厚さに形成し、SiO2 9を 1
50nmの厚さに形成し、上述した第1の実施例と同様のパ
ターンを作製した。そして、この上に、第1の実施例と
同様の製造工程により、赤(R)、緑(G)、青(B)
の各色のストライプ状積層体をそれぞれ蒸着法で形成
し、図19の有機EL素子52を作製した。
Therefore, the circularly polarizing plate 49 is provided on the transparent substrate 6,
It is possible to directly form an organic EL element on this. Actually, in this example, the ITO transparent electrode 5 was formed on the surface of the transparent substrate 6 on which the two-layer laminated broadband birefringent plate 23 (manufactured by Nitto Denko Corporation) and the linear polarizing plate 11 were formed by the sputtering method. It is formed to a thickness of 150 nm, and SiO 2 9 is added to 1
It was formed to a thickness of 50 nm, and a pattern similar to that of the above-described first embodiment was produced. Then, red (R), green (G), and blue (B) are formed on top of this by the same manufacturing process as in the first embodiment.
The striped laminate of each color was formed by vapor deposition to produce the organic EL device 52 of FIG.

【0109】このようにして作製した有機EL素子52に
光を当て、基板6の発光面側から見ると、光の反射はな
く、ほぼ真っ黒に見えた。更に、第1の実施例と同様
に、この有機EL素子52をダイナミックドライブ方式で
電流制御回路部を有する駆動回路(図17)により点灯さ
せた。その結果、第1の実施例とほぼ同様に、コントラ
スト良く発光した。こうした結果は、図18の素子でも同
様であった。
When the organic EL element 52 thus produced was irradiated with light and viewed from the light emitting surface side of the substrate 6, there was no reflection of light and it looked almost black. Further, as in the first embodiment, the organic EL element 52 was lit by a drive circuit (FIG. 17) having a current control circuit section in a dynamic drive system. As a result, light was emitted with good contrast, almost similarly to the first embodiment. These results were the same for the device of FIG.

【0110】従って、これらの実施例によれば、上述し
た第1の実施例と同様の効果が奏せられる上に、円偏光
板49を予め基板6に設け、この上に素子を作り込むこと
ができ、また透明基板6と有機層等の積層体との間に円
偏光板49を安定的に保持できる。
Therefore, according to these embodiments, the same effect as that of the first embodiment described above can be obtained, and the circularly polarizing plate 49 is provided on the substrate 6 in advance, and the element is formed on this. Further, the circularly polarizing plate 49 can be stably held between the transparent substrate 6 and the laminated body such as the organic layer.

【0111】図20は、本発明の第4の実施例を示すもの
であり、光透過型の液晶ディスプレイに本発明を適用し
たものである。
FIG. 20 shows a fourth embodiment of the present invention, in which the present invention is applied to a light transmission type liquid crystal display.

【0112】即ち、ガラスなどの透明な基板42aの内面
上に、ITO(indium tin oxide:インジウムに錫をド
ープした導電性酸化物)などの透明電極層43a、及び液
晶配向膜として高コントラスト良好なドメインを実現す
る例えばSiO斜方蒸着層44aを順次積層した積層体1
Aと;これと同様に、基板42bの内面上に、透明電極層
43b、例えばSiO斜方蒸着層44bを順次積層した積層
体1Bと;を液晶配向膜である例えばSiO斜方蒸着層
44a、44bが互いに対向するように配し、所定のセルギ
ャップdを実現するための粒状のスペーサ45を挟むこと
により液晶セルを構成し、そのセルギャップに強誘電性
液晶46を注入し、周囲を接着剤で封じた構造を有してい
る。
That is, a transparent electrode layer 43a such as ITO (indium tin oxide: a conductive oxide obtained by doping indium with tin) and a liquid crystal alignment film with a high contrast are provided on the inner surface of a transparent substrate 42a such as glass. A laminated body 1 in which, for example, SiO oblique vapor deposition layers 44a are sequentially laminated to realize a domain.
A; similarly to this, a transparent electrode layer is formed on the inner surface of the substrate 42b.
43b, for example, a laminated body 1B in which an SiO oblique vapor deposition layer 44b is sequentially laminated;
A liquid crystal cell is formed by arranging 44a and 44b so as to face each other and sandwiching a granular spacer 45 for realizing a predetermined cell gap d, and a ferroelectric liquid crystal 46 is injected into the cell gap to surround the liquid crystal cell. Has a structure in which is sealed with an adhesive.

【0113】そして、図示の如く、透明基板42b側の面
に複屈折板21と複屈折板22から成る1/4波長板23及び
直線偏光板11で構成された円偏光板49を貼り合わせたも
のである。
Then, as shown in the figure, a quarter-wave plate 23 composed of a birefringent plate 21 and a birefringent plate 22 and a circular polarizing plate 49 composed of a linear polarizing plate 11 are attached to the surface on the transparent substrate 42b side. It is a thing.

【0114】光透過型の液晶は例えばパーソナルコンピ
ュータ等に使用されており、印加電圧による電気信号に
応じて、液晶46がスイッチングしてバックライトBLを
透過又は遮断して、文字や像を表示する機能を有してい
る。
The light transmissive liquid crystal is used in, for example, a personal computer, etc., and the liquid crystal 46 switches according to an electric signal by an applied voltage to transmit or block the backlight BL to display a character or an image. It has a function.

【0115】そして、円偏光手段49を設けることによ
り、透過する光BLのうち円偏光成分が図示のように直
線偏光47(図1の直線偏光17に相当)となって出射す
る。また、一方、外部からの入射光48は、円偏光手段49
との境界をなす基板42bの面またはセル50内部の各界面
で反射しても、円偏光手段49により、反射光46(図1の
円偏光16に相当)は偏光軸が偏光板11とは異なる直線偏
光47となり、偏光板11を通過しない。
By providing the circularly polarizing means 49, the circularly polarized light component of the transmitted light BL is emitted as linearly polarized light 47 (corresponding to the linearly polarized light 17 in FIG. 1) as shown in the drawing. On the other hand, the incident light 48 from the outside receives the circular polarization means 49.
Even if the light is reflected at the surface of the substrate 42b that forms the boundary with or at each interface inside the cell 50, the polarization axis of the reflected light 46 (corresponding to the circularly polarized light 16 in FIG. 1) is different from that of the polarizing plate 11 by the circular polarization means 49. It becomes different linearly polarized light 47 and does not pass through the polarizing plate 11.

【0116】従って、この例においても、素子内部の反
射防止や良好なコントラストが得られる等、上述した第
1の実施例と同様の効果が得られる。
Therefore, also in this example, the same effects as those of the above-described first embodiment can be obtained, such as antireflection inside the element and good contrast.

【0117】以上、本発明の実施例を説明したが、上述
した実施例は本発明の技術的思想に基づいて種々の変形
が可能である。
Although the embodiments of the present invention have been described above, the above-described embodiments can be variously modified based on the technical idea of the present invention.

【0118】例えば、円偏光手段に用いる直線偏光板は
横方向の偏光軸を有するものでもよく、複屈折板も上述
した実施例とは異なる厚みで2枚以上の複屈折板を貼り
合わせたものでもよく、要は1/4波長の位相差が得ら
れるものであればよい。
For example, the linearly polarizing plate used for the circularly polarizing means may have a horizontal polarization axis, and the birefringent plate is a laminate of two or more birefringent plates having a thickness different from those of the above-mentioned embodiments. However, what is necessary is just to obtain a phase difference of ¼ wavelength.

【0119】また、電極、ホール輸送層、発光層、電子
輸送層のそれぞれの厚さは、素子の動作電圧を考慮して
決められるものであり、上述の実施例に限定されるもの
ではない。これら各層の組成や配置、画素のパターン及
びレイアウト等は様々に変化させることができる。反射
率の高い電極材料は、MgAg以外にもAl、Al合金
等、公知の材質が採用可能である。
The thickness of each of the electrodes, the hole transport layer, the light emitting layer, and the electron transport layer is determined in consideration of the operating voltage of the device, and is not limited to the above-mentioned embodiments. The composition and arrangement of each of these layers, the pattern and layout of pixels, and the like can be variously changed. As the electrode material having a high reflectance, well-known materials such as Al and Al alloys can be used in addition to MgAg.

【0120】また、素子の各層の作製法も通常の真空蒸
着法、ラングミュアブロジェット(LB)蒸着法をはじ
め、ディップコーティング法、スピンコーティング法、
真空気体蒸着法、有機分子線エピタキシ法(OMBE)
が採用可能である。なお、ホール輸送層又は電子輸送層
には螢光物質を含有させておいてもよい。
Further, as the method for producing each layer of the device, the usual vacuum vapor deposition method, Langmuir-Blodgett (LB) vapor deposition method, dip coating method, spin coating method,
Vacuum gas deposition method, organic molecular beam epitaxy method (OMBE)
Can be adopted. Note that the hole transport layer or the electron transport layer may contain a fluorescent substance.

【0121】また、本発明の光学的素子は、パッシブマ
トリクス(単純マトリクス)方式だけでなく、アクティ
ブマトリクス方式の素子にも適用可能である。また、モ
ノカラー用の撮像素子として応用してもよく、そして、
上述したディスプレイ以外にも、例えば、文字板などの
光源として利用することも可能であり、この場合はマト
リクス状にする必要はなく、また発光領域を分割しても
よい。また、上述のEL以外の自発光型の素子に適用し
てよい。
Further, the optical element of the present invention can be applied not only to a passive matrix (simple matrix) type but also to an active matrix type element. Also, it may be applied as a mono-color image pickup device, and
In addition to the display described above, it can be used as a light source such as a dial, and in this case, it is not necessary to form a matrix, and the light emitting region may be divided. Further, it may be applied to a self-luminous element other than the above-mentioned EL.

【0122】[0122]

【発明の作用効果】本発明は、光出射面に円偏光手段が
設けられているので、素子の出射面から入射した外部か
らの光の素子内部での反射を大幅に減少させることがで
き、表示画像等のコントラストを著しく改善することが
できる。
According to the present invention, since the circularly polarizing means is provided on the light emitting surface, it is possible to greatly reduce the reflection inside the element of the light incident from the emitting surface of the element from the outside. It is possible to remarkably improve the contrast of a display image or the like.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例による有機EL素子を模
式的に示した斜視図である。
FIG. 1 is a perspective view schematically showing an organic EL device according to a first embodiment of the present invention.

【図2】同有機EL素子の要部の拡大断面図である。FIG. 2 is an enlarged cross-sectional view of a main part of the organic EL device.

【図3】複屈折位相差の波長依存性を示すグラフであ
る。
FIG. 3 is a graph showing wavelength dependence of birefringence retardation.

【図4】同複屈折位相差に伴う反射率の波長による変化
を示すグラフである。
FIG. 4 is a graph showing changes in reflectance with wavelength due to the same birefringence phase difference.

【図5】同有機EL素子の概略平面図である。FIG. 5 is a schematic plan view of the organic EL device.

【図6】同図5のA−A線に沿うa部の拡大断面図であ
る。
6 is an enlarged cross-sectional view of a portion taken along line AA of FIG.

【図7】同B−B線に沿うa部の拡大断面図である。FIG. 7 is an enlarged cross-sectional view of a portion taken along the line BB.

【図8】同有機EL素子の製造工程を示す要部の拡大断
面図である。
FIG. 8 is an enlarged cross-sectional view of a main part showing a manufacturing process of the same organic EL element.

【図9】同他の製造工程を示す拡大断面図(図8のIX−
IX線断面図)である。
9 is an enlarged cross-sectional view showing another manufacturing process (IX- in FIG. 8).
It is a sectional view taken along line IX).

【図10】同他の製造工程を示す拡大断面図である。FIG. 10 is an enlarged cross-sectional view showing another manufacturing process.

【図11】同製造工程に使用可能な真空蒸着装置の概略図
である。
FIG. 11 is a schematic view of a vacuum vapor deposition device that can be used in the manufacturing process.

【図12】同他の製造工程を示す拡大断面図である。FIG. 12 is an enlarged cross-sectional view showing another manufacturing process.

【図13】同他の製造工程を示す拡大断面図である。FIG. 13 is an enlarged cross-sectional view showing the other manufacturing process.

【図14】同他の製造工程を示す拡大断面図である。FIG. 14 is an enlarged sectional view showing another manufacturing process.

【図15】同他の製造工程を示す拡大断面図である。FIG. 15 is an enlarged sectional view showing another manufacturing process.

【図16】同他の製造工程を示す拡大断面図である。FIG. 16 is an enlarged cross-sectional view showing another manufacturing process.

【図17】同有機EL素子の駆動回路図である。FIG. 17 is a drive circuit diagram of the same organic EL element.

【図18】本発明の第2の実施例による有機EL素子の要
部の拡大断面図である。
FIG. 18 is an enlarged cross-sectional view of a main part of the organic EL element according to the second embodiment of the present invention.

【図19】本発明の第3の実施例による有機EL素子の要
部の拡大断面図である。
FIG. 19 is an enlarged cross-sectional view of a main part of an organic EL device according to a third embodiment of the present invention.

【図20】本発明の第4の実施例による液晶表示素子の要
部の拡大断面図である。
FIG. 20 is an enlarged cross-sectional view of a main part of a liquid crystal display element according to a fourth embodiment of the present invention.

【図21】反射防止手段を模式的に示した斜視図である。FIG. 21 is a perspective view schematically showing antireflection means.

【図22】従来例による有機EL素子の概略断面図であ
る。
FIG. 22 is a schematic cross-sectional view of an organic EL element according to a conventional example.

【図23】同他の有機EL素子の概略断面図である。FIG. 23 is a schematic cross-sectional view of another organic EL element of the same.

【図24】同有機EL素子の具体例を示す概略断面図であ
る。
FIG. 24 is a schematic cross-sectional view showing a specific example of the same organic EL element.

【符号の説明】[Explanation of symbols]

1・・・電極(陰極) 2・・・電子輸送層 3・・・発光層 4・・・ホール輸送層 5・・・透明電極(陽極) 6・・・透明基板 11・・・直線偏光板 11a・・・縦方向偏光軸 12、23・・・1/4波長板 12a、23a・・・45度傾斜偏光軸 13・・・反射面 14・・・縦方向偏光 15・・・右円偏光 16・・・左円偏光 17・・・横方向偏光 21、22・・・複屈折板 23・・・1/4波長板 24・・・複屈折板21、22を貼り合わせたときの複屈折分
散曲線 25・・・1/4波長の位相差が得られる複屈折分散線 26・・・複屈折板21の複屈折率分散曲線 27・・・複屈折板22の複屈折率分散曲線 40、50、51・・・有機EL素子 49・・・円偏光手段(円偏光板) L、BL・・・光 a・・・単層の複屈折板の場合の反射率曲線 b・・・複屈折板を複数貼り合わせた場合の反射率曲線 PX・・・画素
DESCRIPTION OF SYMBOLS 1 ... Electrode (cathode) 2 ... Electron transport layer 3 ... Emitting layer 4 ... Hole transport layer 5 ... Transparent electrode (anode) 6 ... Transparent substrate 11 ... Linear polarizing plate 11a ... longitudinal polarization axis 12,23 ... quarter wave plate 12a, 23a ... 45 degree tilted polarization axis 13 ... reflecting surface 14 ... vertical polarization 15 ... right circular polarization 16 ... Left circularly polarized light 17 ... Horizontally polarized light 21, 22 ... Birefringent plate 23 ... Quarter wave plate 24 ... Birefringence when the birefringent plates 21 and 22 are bonded Dispersion curve 25: Birefringence dispersion line capable of obtaining a phase difference of ¼ wavelength 26: Birefringence dispersion curve of birefringence plate 21 27: Birefringence dispersion curve of birefringence plate 22 40 50, 51 ... Organic EL element 49 ... Circular polarizing means (circular polarizing plate) L, BL ... Light a ... Reflectance curve in the case of a single-layer birefringent plate b ... Birefringence Reflection curve when multiple plates are attached PX ... Pixel

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】 光出射面側に円偏光手段が設けられてい
る発光素子。
1. A light emitting device having a circular polarization means on the light exit surface side.
【請求項2】 発光層の光出射面とは反対側に光反射層
が形成されている、請求項1に記載した表示素子。
2. The display element according to claim 1, wherein a light reflecting layer is formed on the side of the light emitting layer opposite to the light emitting surface.
【請求項3】 円偏光手段が直線偏光板と1/4波長板
とで構成されている、請求項1に記載した表示素子。
3. The display element according to claim 1, wherein the circularly polarizing means comprises a linearly polarizing plate and a quarter-wave plate.
【請求項4】 1/4波長板が、広波長範囲でほぼ1/
4波長の位相差が得られるように、複数の複屈折板によ
って構成されている、請求項3に記載した表示素子。
4. A quarter-wave plate is approximately one-quarter in a wide wavelength range.
The display device according to claim 3, wherein the display device is configured by a plurality of birefringent plates so as to obtain a phase difference of 4 wavelengths.
【請求項5】 1/4波長板が複屈折特性の異なる複数
の複屈折板によって構成されている、請求項4に記載し
た表示素子。
5. The display element according to claim 4, wherein the quarter-wave plate is composed of a plurality of birefringent plates having different birefringence characteristics.
【請求項6】 1/4波長板が、直線偏光板の偏光軸に
対して45度若しくはそれと同等の傾斜の偏光軸を有す
る、請求項3に記載した表示素子。
6. The display element according to claim 3, wherein the quarter-wave plate has a polarization axis of 45 degrees with respect to the polarization axis of the linear polarizing plate or an inclination equivalent to the polarization axis.
【請求項7】 円偏光手段が素子の光出射側に設けら
れ、外部からの入射光は通すが、前記入射光がこの素子
の内部で反射した反射光を外部へ出さないために遮蔽す
るようになっている、請求項1に記載した表示素子。
7. A circularly polarizing means is provided on the light emitting side of the element to allow the incident light from the outside to pass through, but to shield the reflected light reflected inside the element from the outside so as not to the outside. The display element according to claim 1, wherein the display element is
【請求項8】 光学的に透明な基体の上に、第1の電極
と発光層と光反射率の高い第2の電極とが積層され、こ
れらが積層された反対側の前記基体の上に円偏光手段が
設けられ、電界発光素子として構成された、請求項1に
記載した表示素子。
8. A first electrode, a light emitting layer, and a second electrode having a high light reflectance are laminated on an optically transparent substrate, and on the opposite substrate on which these are laminated. The display device according to claim 1, wherein the display device is provided with a circular polarization means and is configured as an electroluminescence device.
【請求項9】 光学的に透明な基体の上に、第1の電極
と発光層と光反射率の高い第2の電極とが積層され、こ
れらの積層体と前記基体との間に円偏光手段が設けら
れ、電界発光素子として構成された、請求項1に記載し
た表示素子。
9. A first electrode, a light emitting layer, and a second electrode having a high light reflectance are laminated on an optically transparent substrate, and circularly polarized light is provided between these laminates and the substrate. The display device according to claim 1, wherein the display device is provided with means and is configured as an electroluminescent device.
【請求項10】 ストライプ状の複数の第1の電極上に、
発光層を含む少なくとも一層のストライプ状の複数の有
機層と、前記第1の電極に交差したストライプ状の複数
の第2の電極とが設けられている、請求項8又は9に記
載した表示素子。
10. The plurality of stripe-shaped first electrodes,
10. The display element according to claim 8, wherein at least one stripe-shaped plurality of organic layers including a light emitting layer and a plurality of stripe-shaped second electrodes intersecting with the first electrode are provided. .
【請求項11】 有機電界発光素子又はディスプレイであ
る、請求項10に記載した表示素子。
11. The display device according to claim 10, which is an organic electroluminescent device or a display.
JP7305077A 1995-10-30 1995-10-30 Display element Abandoned JPH09127885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7305077A JPH09127885A (en) 1995-10-30 1995-10-30 Display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7305077A JPH09127885A (en) 1995-10-30 1995-10-30 Display element

Publications (1)

Publication Number Publication Date
JPH09127885A true JPH09127885A (en) 1997-05-16

Family

ID=17940842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7305077A Abandoned JPH09127885A (en) 1995-10-30 1995-10-30 Display element

Country Status (1)

Country Link
JP (1) JPH09127885A (en)

Cited By (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000005703A1 (en) * 1998-07-24 2000-02-03 Seiko Epson Corporation Display
JP2001249222A (en) * 2000-03-02 2001-09-14 Teijin Ltd Antireflection film and light emitting display element using the same
JP2001343908A (en) * 2000-05-31 2001-12-14 Nitto Denko Corp Touch type EL display device and input detection method
JP2002156920A (en) * 2000-09-05 2002-05-31 Nitto Denko Corp EL display device with touch panel
JP2002328630A (en) * 2001-02-20 2002-11-15 Sharp Corp Display device
JP2003115388A (en) * 2001-10-01 2003-04-18 Semiconductor Energy Lab Co Ltd Light emitting device and electronic equipment, and organic polarizing film
US6706425B2 (en) 1999-07-21 2004-03-16 Nec Corporation Organic EL panel and filter for same
JP2004164912A (en) * 2002-11-11 2004-06-10 Seiko Epson Corp Display body, display panel and display device
EP1309016A3 (en) * 2001-10-30 2004-07-21 Seiko Epson Corporation Electro-optical apparatus, manufacturing method thereof, and electronic instrument
US6836068B2 (en) 2001-04-27 2004-12-28 Canon Kabushiki Kaisha Organic electroluminescent device and display apparatus
US6841803B2 (en) 2001-12-18 2005-01-11 Nitto Denko Corporation Display device
JP2005166629A (en) * 2003-11-14 2005-06-23 Optrex Corp Organic el display device and its manufacturing method
JP2005183006A (en) * 2003-12-15 2005-07-07 Semiconductor Energy Lab Co Ltd LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE
JP2005292597A (en) * 2004-04-01 2005-10-20 Dainippon Printing Co Ltd Display device
US7012365B2 (en) 2001-01-15 2006-03-14 Hitachi, Ltd. Light-emitting device and light-emitting display with a polarization separator between an emissive layer and a phase plate
US7045949B2 (en) 2001-06-15 2006-05-16 Sony Corporation Display unit
US7067985B2 (en) 2002-06-21 2006-06-27 Hitachi Displays, Ltd. Display device
ES2261000A1 (en) * 2004-03-31 2006-11-01 Gonzalo Fernandez Callejo Device for improving contrast in light emitting appliances. (Machine-translation by Google Translate, not legally binding)
US7132791B2 (en) 2003-04-11 2006-11-07 Kabushiki Kaisha Toyota Jidoshokki Electroluminescence display
WO2006137268A1 (en) * 2005-06-23 2006-12-28 Nippon Oil Corporation Circular polarizing plate, method for producing the same, optical film, liquid crystal display, and electroluminescent element
US7161185B2 (en) 2003-06-27 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US7176619B2 (en) 2001-08-21 2007-02-13 Sharp Kabushiki Kaisha Self-luminescence image display unit
EP1598878A3 (en) * 2004-05-17 2007-05-02 Lg Electronics Inc. Organic EL display
JP2007188052A (en) * 2005-12-14 2007-07-26 Canon Inc Display device
JP2007335099A (en) * 2006-06-12 2007-12-27 Fujikura Ltd Light emitting device and manufacturing method thereof
EP1879242A1 (en) 2006-07-14 2008-01-16 Samsung SDI Co., Ltd. Organic light-emitting device
JP2008010416A (en) * 2006-06-02 2008-01-17 Semiconductor Energy Lab Co Ltd Illumination device and liquid crystal display device
US7333077B2 (en) 2002-11-27 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP2008122485A (en) * 2006-11-09 2008-05-29 Nitto Denko Corp Polarizer, polarizing plate, circularly polarizing filter, image display device, and manufacturing method of polarizer
CN100403573C (en) * 2003-02-19 2008-07-16 友达光电股份有限公司 organic light emitting diode
JP2008171011A (en) * 2001-02-20 2008-07-24 Sharp Corp Display device
US7446462B2 (en) 2005-02-23 2008-11-04 Cheil Industries, Inc. Brightness-enhanced multilayer optical film with low reflectivity for display and organic light emitting diode display using the same
EP2040314A1 (en) 2007-09-19 2009-03-25 Fujifilm Corporation Light-emitting device or display device, and method for producing them
US7532173B2 (en) 2003-02-28 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device and folding portable terminal
US7538487B2 (en) 2005-09-29 2009-05-26 Canon Kabushiki Kaisha Organic EL display device including anomalous dispersion layer
CN100495176C (en) 2005-11-18 2009-06-03 统宝光电股份有限公司 Top and bottom light emitting organic electroluminescent display
JP2009145776A (en) * 2007-12-17 2009-07-02 Nitto Denko Corp Viewing angle control system and image display device
EP2154737A2 (en) 1999-11-22 2010-02-17 Sony Corporation Display device
EP2153972A2 (en) 2008-08-04 2010-02-17 Fujifilm Corporation Method for producing optical film, optical film, polarizer, optical compensatory film, antireflection film and liquid crystal display device
US7671528B2 (en) * 2006-03-30 2010-03-02 Canon Kabuhsiki Kaisha Display apparatus with circularly polarizing member and a resonator assembly for attenuating external light
JP2010066437A (en) * 2008-09-10 2010-03-25 Hitachi Displays Ltd Liquid crystal display
US7719745B2 (en) 2007-07-10 2010-05-18 Seiko Epson Corporation Display device and electronic apparatus
JP2010117723A (en) * 2009-12-25 2010-05-27 Dainippon Printing Co Ltd Phase difference control board having column body
US7732809B2 (en) 2003-08-13 2010-06-08 Hitachi Displays, Ltd. Light emitting display providing with compensated cholesteric reflective polarizer for improved contrast even in high ambient light or large viewing angle
JP2010139760A (en) * 2008-12-11 2010-06-24 Casio Computer Co Ltd Display device
KR100983149B1 (en) * 2003-05-21 2010-09-20 사천홍시현시기건유한공사 Organic E.L. device
CN101859024A (en) * 2009-04-06 2010-10-13 日东电工株式会社 video viewing device
US7825579B2 (en) 2005-01-31 2010-11-02 Nippon Seiki Co., Ltd. Display device
WO2010131387A1 (en) * 2009-05-15 2010-11-18 シャープ株式会社 Display apparatus
JP2011017853A (en) * 2009-07-08 2011-01-27 Tokai Rika Co Ltd Display device
WO2011092939A1 (en) * 2010-01-26 2011-08-04 シャープ株式会社 Organic electroluminescent element, method for manufacturing same, and organic electroluminescent display device
US8076838B2 (en) 2007-10-31 2011-12-13 Seiko Epson Corporation Light emitting device
JP2012103719A (en) * 2011-12-28 2012-05-31 Nitto Denko Corp Viewing angle control system and image display device
JP2012122824A (en) * 2010-12-08 2012-06-28 Ihi Corp Underwater visual inspection device
US8242683B2 (en) 2003-04-07 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Electronic display including a light-emitting element and a color filter sandwiched between two polarizers
JP2012230885A (en) * 2011-04-25 2012-11-22 Samsung Mobile Display Co Ltd Display device changing its optical reflectance and driving method thereof
US8451537B2 (en) 2009-05-08 2013-05-28 Nitto Denko Corporation Video viewing facility and self-luminous display
EP2687902A1 (en) * 2012-07-16 2014-01-22 LG Display Co., Ltd. Quantum rod light-emitting display device
JP2014029787A (en) * 2012-07-31 2014-02-13 Nitto Denko Corp Display device and method for manufacturing the same
JP2014078014A (en) * 2013-11-22 2014-05-01 Panasonic Corp El display device
JP2014092794A (en) * 2012-11-06 2014-05-19 Samsung Electronics Co Ltd Polarizing film, anti-reflective film and display device
WO2014109350A1 (en) 2013-01-10 2014-07-17 コニカミノルタ株式会社 Resin composition, triazole compound, optical film, polarizing plate, optical lens, circularly polarizing plate and image display device
KR20140131951A (en) 2012-03-12 2014-11-14 코니카 미놀타 가부시키가이샤 ? / 4 retardation film, circular polarizer, and organic electroluminescence display device
KR20140135739A (en) 2012-03-15 2014-11-26 후지필름 가부시키가이샤 Organic el display element comprising optical laminate
US9046245B2 (en) 2006-06-02 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Lighting device and liquid crystal display device utilizing selective reflection structure
JP2016006548A (en) * 2015-09-28 2016-01-14 大日本印刷株式会社 Phase difference control board having column body
US9759945B2 (en) 2012-03-05 2017-09-12 Fujifilm Corporation Circular polarizing plate having patterned retardation layer and organic EL display element having said circular polarizing plate
WO2017170360A1 (en) 2016-03-30 2017-10-05 日本ゼオン株式会社 Optically anisotropic laminate, circularly polarizing plate, and image display device
JP2018097918A (en) * 2016-12-08 2018-06-21 スタンレー電気株式会社 Vehicular lamp and lighting fixture
US10026929B2 (en) 2014-05-01 2018-07-17 Fujifilm Corporation Organic el display device
WO2019151334A1 (en) * 2018-01-30 2019-08-08 富士フイルム株式会社 Polarization plate, circular polarization plate, and display device
KR20190141751A (en) 2017-06-21 2019-12-24 후지필름 가부시키가이샤 Manufacturing method of retardation plate, organic electroluminescence display, and retardation plate for organic electroluminescence display
US10521062B2 (en) 2016-04-27 2019-12-31 Zeon Corporation Film sensor member and method for manufacturing same, circularly polarizing plate and method for manufacturing same, and image display device
KR20200003122A (en) 2017-06-21 2020-01-08 후지필름 가부시키가이샤 Manufacturing method of retardation plate, organic electroluminescence display, and retardation plate for organic electroluminescence display
US10644078B2 (en) 2015-09-03 2020-05-05 Fujifilm Corporation Organic electroluminescence display device having a polarizer comprised of polarization regions
US10705385B2 (en) 2016-11-30 2020-07-07 Zeon Corporation Optical laminate, circularly polarizing plate, touch panel, and image display device
US10705274B2 (en) 2016-03-30 2020-07-07 Zeon Coporation Optically anisotropic layer and production method therefor, optically anisotropic laminate and production method therefor, optically anisotropic transfer body, polarization plate, and image display device
KR20200096963A (en) 2018-01-17 2020-08-14 후지필름 가부시키가이샤 Composition, a method of manufacturing a retardation film for an organic electroluminescence display device, and a retardation film for an organic electroluminescence display device
US10935835B2 (en) 2016-08-08 2021-03-02 Zeon Corporation Optically anisotropic laminate, polarizing plate, and image display device
CN113448101A (en) * 2021-06-28 2021-09-28 歌尔股份有限公司 Optical module and head-mounted display device
KR20220044425A (en) 2020-10-01 2022-04-08 스미또모 가가꾸 가부시키가이샤 Polarizing plate and organic el display device
CN114613277A (en) * 2022-03-31 2022-06-10 合肥维信诺科技有限公司 Display panel and display device
US11818906B2 (en) 2015-07-27 2023-11-14 Sony Group Corporation Display device with reduced reflection

Cited By (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000005703A1 (en) * 1998-07-24 2000-02-03 Seiko Epson Corporation Display
US6437769B1 (en) 1998-07-24 2002-08-20 Seiko Epson Corporation Display apparatus
US6706425B2 (en) 1999-07-21 2004-03-16 Nec Corporation Organic EL panel and filter for same
EP2154737A2 (en) 1999-11-22 2010-02-17 Sony Corporation Display device
EP2169738A2 (en) 1999-11-22 2010-03-31 Sony Corporation Display device
JP2001249222A (en) * 2000-03-02 2001-09-14 Teijin Ltd Antireflection film and light emitting display element using the same
JP2001343908A (en) * 2000-05-31 2001-12-14 Nitto Denko Corp Touch type EL display device and input detection method
JP2002156920A (en) * 2000-09-05 2002-05-31 Nitto Denko Corp EL display device with touch panel
US7781962B2 (en) 2001-01-15 2010-08-24 Hitachi, Ltd. Organic light-emitting devices and displays including a polarization separator, a phase plate, and a polarizer
US7012365B2 (en) 2001-01-15 2006-03-14 Hitachi, Ltd. Light-emitting device and light-emitting display with a polarization separator between an emissive layer and a phase plate
US7339316B2 (en) 2001-01-15 2008-03-04 Hitachi, Ltd Organic light-emitting devices and displays including a polarization separator, a phase plate, and a polarizer
US7385654B2 (en) 2001-02-20 2008-06-10 Sharp Kabushiki Kaisha Display
US7176991B2 (en) 2001-02-20 2007-02-13 Sharp Kabushiki Kaisha Display
JP2008171011A (en) * 2001-02-20 2008-07-24 Sharp Corp Display device
US7102704B2 (en) 2001-02-20 2006-09-05 Sharp Kabushiki Kaisha Display
JP2002328630A (en) * 2001-02-20 2002-11-15 Sharp Corp Display device
US7015638B2 (en) 2001-04-27 2006-03-21 Canon Kabushiki Kaisha Organic electroluminescent device and display apparatus
US6836068B2 (en) 2001-04-27 2004-12-28 Canon Kabushiki Kaisha Organic electroluminescent device and display apparatus
US7045949B2 (en) 2001-06-15 2006-05-16 Sony Corporation Display unit
US7176619B2 (en) 2001-08-21 2007-02-13 Sharp Kabushiki Kaisha Self-luminescence image display unit
US7005671B2 (en) 2001-10-01 2006-02-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and organic polarizing film
JP2003115388A (en) * 2001-10-01 2003-04-18 Semiconductor Energy Lab Co Ltd Light emitting device and electronic equipment, and organic polarizing film
US7800099B2 (en) 2001-10-01 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and organic polarizing film
EP1309016A3 (en) * 2001-10-30 2004-07-21 Seiko Epson Corporation Electro-optical apparatus, manufacturing method thereof, and electronic instrument
US7274423B2 (en) 2001-10-30 2007-09-25 Seiko Epson Corporation Electro-optical apparatus having a light-emitting element, manufacturing method thereof, and electronic instrument
KR100495743B1 (en) * 2001-10-30 2005-06-16 세이코 엡슨 가부시키가이샤 Electro-optic apparatus, method of manufacturing the same, and electronic instrument
US6841803B2 (en) 2001-12-18 2005-01-11 Nitto Denko Corporation Display device
US8198804B2 (en) 2002-06-21 2012-06-12 Hitachi Displays, Ltd. Display device
US7557494B2 (en) 2002-06-21 2009-07-07 Hitachi Displays, Ltd. Display device
US7928639B2 (en) 2002-06-21 2011-04-19 Hitachi Displays, Ltd. Display device
US7425794B2 (en) 2002-06-21 2008-09-16 Hitachi Displays, Ltd. Display device
US7067985B2 (en) 2002-06-21 2006-06-27 Hitachi Displays, Ltd. Display device
JP2004164912A (en) * 2002-11-11 2004-06-10 Seiko Epson Corp Display body, display panel and display device
US7592984B2 (en) 2002-11-27 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US7333077B2 (en) 2002-11-27 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN100403573C (en) * 2003-02-19 2008-07-16 友达光电股份有限公司 organic light emitting diode
US7532173B2 (en) 2003-02-28 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device and folding portable terminal
US8242683B2 (en) 2003-04-07 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Electronic display including a light-emitting element and a color filter sandwiched between two polarizers
US7132791B2 (en) 2003-04-11 2006-11-07 Kabushiki Kaisha Toyota Jidoshokki Electroluminescence display
KR100983149B1 (en) * 2003-05-21 2010-09-20 사천홍시현시기건유한공사 Organic E.L. device
US7161185B2 (en) 2003-06-27 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US8482484B2 (en) 2003-06-27 2013-07-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US7732809B2 (en) 2003-08-13 2010-06-08 Hitachi Displays, Ltd. Light emitting display providing with compensated cholesteric reflective polarizer for improved contrast even in high ambient light or large viewing angle
US8368080B2 (en) 2003-08-13 2013-02-05 Hitachi Displays, Ltd. Light emitting display with optical compensation layer and circularly polarized reflective layer for improved contrast even in high ambient light
JP2005166629A (en) * 2003-11-14 2005-06-23 Optrex Corp Organic el display device and its manufacturing method
US7750552B2 (en) 2003-12-15 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Dual emission active matrix display
US8188655B2 (en) 2003-12-15 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic devices
JP2005183006A (en) * 2003-12-15 2005-07-07 Semiconductor Energy Lab Co Ltd LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE
ES2261000B1 (en) * 2004-03-31 2007-11-16 Gonzalo Fernandez Callejo DEVICE FOR IMPROVEMENT OF CONTRAST IN LIGHT-emitting APPLIANCES.
ES2261000A1 (en) * 2004-03-31 2006-11-01 Gonzalo Fernandez Callejo Device for improving contrast in light emitting appliances. (Machine-translation by Google Translate, not legally binding)
JP2005292597A (en) * 2004-04-01 2005-10-20 Dainippon Printing Co Ltd Display device
US7755262B2 (en) 2004-05-17 2010-07-13 Lg Display Co., Ltd. Organic EL display
EP1598878A3 (en) * 2004-05-17 2007-05-02 Lg Electronics Inc. Organic EL display
US7825579B2 (en) 2005-01-31 2010-11-02 Nippon Seiki Co., Ltd. Display device
US7446462B2 (en) 2005-02-23 2008-11-04 Cheil Industries, Inc. Brightness-enhanced multilayer optical film with low reflectivity for display and organic light emitting diode display using the same
JP2007003824A (en) * 2005-06-23 2007-01-11 Nippon Oil Corp Circular polarizing plate, manufacturing method of circular polarizing plate, optical film, liquid crystal display device and electroluminescence element
WO2006137268A1 (en) * 2005-06-23 2006-12-28 Nippon Oil Corporation Circular polarizing plate, method for producing the same, optical film, liquid crystal display, and electroluminescent element
US7538487B2 (en) 2005-09-29 2009-05-26 Canon Kabushiki Kaisha Organic EL display device including anomalous dispersion layer
CN100495176C (en) 2005-11-18 2009-06-03 统宝光电股份有限公司 Top and bottom light emitting organic electroluminescent display
US7868544B2 (en) 2005-12-14 2011-01-11 Canon Kabushiki Kaisha Display apparatus
US7541739B2 (en) 2005-12-14 2009-06-02 Canon Kabushiki Kaisha Display apparatus
JP2007188052A (en) * 2005-12-14 2007-07-26 Canon Inc Display device
US7671528B2 (en) * 2006-03-30 2010-03-02 Canon Kabuhsiki Kaisha Display apparatus with circularly polarizing member and a resonator assembly for attenuating external light
US7928640B2 (en) 2006-03-30 2011-04-19 Canon Kabushiki Kaisha Light-emitting display apparatus incorporating a circular polarizer in arrangement with a light-absorbing member
JP2008010416A (en) * 2006-06-02 2008-01-17 Semiconductor Energy Lab Co Ltd Illumination device and liquid crystal display device
US9046245B2 (en) 2006-06-02 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Lighting device and liquid crystal display device utilizing selective reflection structure
JP2007335099A (en) * 2006-06-12 2007-12-27 Fujikura Ltd Light emitting device and manufacturing method thereof
JP2008021633A (en) * 2006-07-14 2008-01-31 Samsung Sdi Co Ltd Organic light emitting device
US7947973B2 (en) 2006-07-14 2011-05-24 Samsung Mobile Display Co., Ltd. Organic light-emitting device
EP1879242A1 (en) 2006-07-14 2008-01-16 Samsung SDI Co., Ltd. Organic light-emitting device
JP2008122485A (en) * 2006-11-09 2008-05-29 Nitto Denko Corp Polarizer, polarizing plate, circularly polarizing filter, image display device, and manufacturing method of polarizer
US7719745B2 (en) 2007-07-10 2010-05-18 Seiko Epson Corporation Display device and electronic apparatus
EP2040314A1 (en) 2007-09-19 2009-03-25 Fujifilm Corporation Light-emitting device or display device, and method for producing them
US8076838B2 (en) 2007-10-31 2011-12-13 Seiko Epson Corporation Light emitting device
US8982300B2 (en) 2007-12-17 2015-03-17 Nitto Denko Corporation Viewing angle controlling system, and image display device using the same
JP2009145776A (en) * 2007-12-17 2009-07-02 Nitto Denko Corp Viewing angle control system and image display device
EP2153972A2 (en) 2008-08-04 2010-02-17 Fujifilm Corporation Method for producing optical film, optical film, polarizer, optical compensatory film, antireflection film and liquid crystal display device
JP2010066437A (en) * 2008-09-10 2010-03-25 Hitachi Displays Ltd Liquid crystal display
JP2010139760A (en) * 2008-12-11 2010-06-24 Casio Computer Co Ltd Display device
US8454179B2 (en) 2009-04-06 2013-06-04 Nitto Denko Corporation Video image appreciation system
CN101859024A (en) * 2009-04-06 2010-10-13 日东电工株式会社 video viewing device
US8451537B2 (en) 2009-05-08 2013-05-28 Nitto Denko Corporation Video viewing facility and self-luminous display
CN102272814A (en) * 2009-05-15 2011-12-07 夏普株式会社 display device
WO2010131387A1 (en) * 2009-05-15 2010-11-18 シャープ株式会社 Display apparatus
JP5335901B2 (en) * 2009-05-15 2013-11-06 シャープ株式会社 Display device
JP2011017853A (en) * 2009-07-08 2011-01-27 Tokai Rika Co Ltd Display device
JP2010117723A (en) * 2009-12-25 2010-05-27 Dainippon Printing Co Ltd Phase difference control board having column body
US9401493B2 (en) 2010-01-26 2016-07-26 Unified Innovative Technology, Llc Organic electroluminescent element, method for manufacturing same, and organic electroluminescent display device
WO2011092939A1 (en) * 2010-01-26 2011-08-04 シャープ株式会社 Organic electroluminescent element, method for manufacturing same, and organic electroluminescent display device
JP2012122824A (en) * 2010-12-08 2012-06-28 Ihi Corp Underwater visual inspection device
JP2012230885A (en) * 2011-04-25 2012-11-22 Samsung Mobile Display Co Ltd Display device changing its optical reflectance and driving method thereof
US9176359B2 (en) 2011-04-25 2015-11-03 Samsung Display Co., Ltd. Display apparatus and method of operating the same
JP2012103719A (en) * 2011-12-28 2012-05-31 Nitto Denko Corp Viewing angle control system and image display device
US9759945B2 (en) 2012-03-05 2017-09-12 Fujifilm Corporation Circular polarizing plate having patterned retardation layer and organic EL display element having said circular polarizing plate
KR20140131951A (en) 2012-03-12 2014-11-14 코니카 미놀타 가부시키가이샤 ? / 4 retardation film, circular polarizer, and organic electroluminescence display device
US9588271B2 (en) 2012-03-15 2017-03-07 Fujifilm Corporation Organic EL display element having optical stack
KR20140135739A (en) 2012-03-15 2014-11-26 후지필름 가부시키가이샤 Organic el display element comprising optical laminate
EP2687902A1 (en) * 2012-07-16 2014-01-22 LG Display Co., Ltd. Quantum rod light-emitting display device
US9164353B2 (en) 2012-07-16 2015-10-20 Lg Display Co., Ltd. Quantum rod light-emitting display device
US9627655B2 (en) 2012-07-31 2017-04-18 Nitto Denko Corporation Display device and method for manufacturing same
JP2014029787A (en) * 2012-07-31 2014-02-13 Nitto Denko Corp Display device and method for manufacturing the same
CN104509207A (en) * 2012-07-31 2015-04-08 日东电工株式会社 Display device and manufacturing method thereof
JP2014092794A (en) * 2012-11-06 2014-05-19 Samsung Electronics Co Ltd Polarizing film, anti-reflective film and display device
JP2018109781A (en) * 2012-11-06 2018-07-12 三星電子株式会社Samsung Electronics Co.,Ltd. Polarization film, antireflection film and display device
WO2014109350A1 (en) 2013-01-10 2014-07-17 コニカミノルタ株式会社 Resin composition, triazole compound, optical film, polarizing plate, optical lens, circularly polarizing plate and image display device
JP2014078014A (en) * 2013-11-22 2014-05-01 Panasonic Corp El display device
US10026929B2 (en) 2014-05-01 2018-07-17 Fujifilm Corporation Organic el display device
US11818906B2 (en) 2015-07-27 2023-11-14 Sony Group Corporation Display device with reduced reflection
US10644078B2 (en) 2015-09-03 2020-05-05 Fujifilm Corporation Organic electroluminescence display device having a polarizer comprised of polarization regions
JP2016006548A (en) * 2015-09-28 2016-01-14 大日本印刷株式会社 Phase difference control board having column body
WO2017170360A1 (en) 2016-03-30 2017-10-05 日本ゼオン株式会社 Optically anisotropic laminate, circularly polarizing plate, and image display device
US10705274B2 (en) 2016-03-30 2020-07-07 Zeon Coporation Optically anisotropic layer and production method therefor, optically anisotropic laminate and production method therefor, optically anisotropic transfer body, polarization plate, and image display device
US10824016B2 (en) 2016-03-30 2020-11-03 Zeon Corporation Optically anisotropic laminate, circularly polarizing plate, and image display device
US10521062B2 (en) 2016-04-27 2019-12-31 Zeon Corporation Film sensor member and method for manufacturing same, circularly polarizing plate and method for manufacturing same, and image display device
US10935835B2 (en) 2016-08-08 2021-03-02 Zeon Corporation Optically anisotropic laminate, polarizing plate, and image display device
US10705385B2 (en) 2016-11-30 2020-07-07 Zeon Corporation Optical laminate, circularly polarizing plate, touch panel, and image display device
JP2018097918A (en) * 2016-12-08 2018-06-21 スタンレー電気株式会社 Vehicular lamp and lighting fixture
KR20200003122A (en) 2017-06-21 2020-01-08 후지필름 가부시키가이샤 Manufacturing method of retardation plate, organic electroluminescence display, and retardation plate for organic electroluminescence display
US11374205B2 (en) 2017-06-21 2022-06-28 Fujifilm Corporation Phase difference plate for organic EL display device, organic EL display device, and method for producing phase difference plate
US11193064B2 (en) 2017-06-21 2021-12-07 Fujifilm Corporation Phase difference plate for organic EL display device, organic EL display device, and method for producing phase difference plate
KR20190141751A (en) 2017-06-21 2019-12-24 후지필름 가부시키가이샤 Manufacturing method of retardation plate, organic electroluminescence display, and retardation plate for organic electroluminescence display
KR20200096963A (en) 2018-01-17 2020-08-14 후지필름 가부시키가이샤 Composition, a method of manufacturing a retardation film for an organic electroluminescence display device, and a retardation film for an organic electroluminescence display device
JPWO2019151334A1 (en) * 2018-01-30 2021-02-04 富士フイルム株式会社 Polarizing plate, circular polarizing plate, display device
US11054691B2 (en) 2018-01-30 2021-07-06 Fujifilm Corporation Polarizing plate, circularly polarizing plate, and display device
CN111684324A (en) * 2018-01-30 2020-09-18 富士胶片株式会社 Polarizers, circular polarizers, display devices
CN111684324B (en) * 2018-01-30 2022-05-13 富士胶片株式会社 Polarizers, circular polarizers, display devices
KR20200100189A (en) 2018-01-30 2020-08-25 후지필름 가부시키가이샤 Polarizing plate, circular polarizing plate, display device
WO2019151334A1 (en) * 2018-01-30 2019-08-08 富士フイルム株式会社 Polarization plate, circular polarization plate, and display device
KR20220044425A (en) 2020-10-01 2022-04-08 스미또모 가가꾸 가부시키가이샤 Polarizing plate and organic el display device
CN113448101A (en) * 2021-06-28 2021-09-28 歌尔股份有限公司 Optical module and head-mounted display device
CN114613277A (en) * 2022-03-31 2022-06-10 合肥维信诺科技有限公司 Display panel and display device

Similar Documents

Publication Publication Date Title
JPH09127885A (en) Display element
US6841803B2 (en) Display device
US7012365B2 (en) Light-emitting device and light-emitting display with a polarization separator between an emissive layer and a phase plate
US6900458B2 (en) Transflective display having an OLED backlight
US9129552B2 (en) Display devices using feedback enhanced light emitting diode
KR100454748B1 (en) An organic EL panel and filter for same
US7638796B2 (en) Organic light-emitting display device
US7239084B2 (en) Organic EL device and liquid crystal display
US20040206960A1 (en) Light emitting element and light emitting display
KR100588038B1 (en) Self-luminous image display device
US20050088084A1 (en) Organic polarized light emitting diode display with polarizer
US20190006628A1 (en) Organic Light-Emitting Diode Device and Manufacturing Method Thereof and Display Panel
JP2002215067A5 (en)
JP2007005173A (en) Display device
JP2008218391A (en) Organic light emitting display
KR20190078753A (en) Organic light emitting diodes display
JP3672127B2 (en) Optical element manufacturing method and optical element
JP4644938B2 (en) Organic electroluminescence device
TWI222049B (en) Color display unit
KR102312784B1 (en) Electroluminescence device and method for fabricating thereof
JPH11249130A (en) Liquid crystal display device
JP2009123511A (en) Light emitting device
KR102598924B1 (en) Organic light emitting diodes display panel
JPH10189238A (en) Optical element and method of manufacturing the same
JPH10125461A (en) Reflective liquid crystal device

Legal Events

Date Code Title Description
A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20060124