JPH0718000B2 - Method for forming synthetic resin film - Google Patents
Method for forming synthetic resin filmInfo
- Publication number
- JPH0718000B2 JPH0718000B2 JP10138085A JP10138085A JPH0718000B2 JP H0718000 B2 JPH0718000 B2 JP H0718000B2 JP 10138085 A JP10138085 A JP 10138085A JP 10138085 A JP10138085 A JP 10138085A JP H0718000 B2 JPH0718000 B2 JP H0718000B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- temperature
- substrate
- synthetic resin
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920003002 synthetic resin Polymers 0.000 title claims description 18
- 239000000057 synthetic resin Substances 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 16
- 239000000178 monomer Substances 0.000 claims description 42
- 239000002994 raw material Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 36
- 238000001704 evaporation Methods 0.000 claims description 19
- 230000000379 polymerizing effect Effects 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 17
- 230000008020 evaporation Effects 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 6
- 230000008022 sublimation Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LXEJRKJRKIFVNY-UHFFFAOYSA-N terephthaloyl chloride Chemical compound ClC(=O)C1=CC=C(C(Cl)=O)C=C1 LXEJRKJRKIFVNY-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Polyamides (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は例えば半導体素子の絶縁膜、パッシベーション
膜、ソフトエラー防止膜や液晶表示素子の液晶配向膜、
液体や基体の分離膜等の各種合成樹脂被膜の形成方法に
関する。The present invention relates to, for example, an insulating film of a semiconductor device, a passivation film, a soft error prevention film, a liquid crystal alignment film of a liquid crystal display device,
The present invention relates to a method for forming various synthetic resin coating films such as separation films for liquids and substrates.
（従来の技術） 従来、この種合成樹脂被膜の形成方法としては、合成樹
脂の原料モノマーを適当な溶媒に溶かしてこれを基体上
で重合させるいわゆる湿式法、合成樹脂ポリマー自体を
基体上に蒸着させるいわゆるポリマー蒸着法或いは合成
樹脂の原料モノマーをプラズマ状態にしてプラズマ中の
基体上で重合させるプラズマ重合法等が知られている。(Prior Art) Conventionally, as a method of forming a synthetic resin film of this type, a so-called wet method in which a raw material monomer of a synthetic resin is dissolved in an appropriate solvent and polymerized on a substrate, a synthetic resin polymer itself is vapor-deposited on a substrate. There is known a so-called polymer vapor deposition method or a plasma polymerization method in which a raw material monomer of a synthetic resin is put into a plasma state and polymerized on a substrate in plasma.
（発明が解決しようとする問題点） しかしながら、前記従来法は湿式法の場合は極めて薄い
膜が得られ難く、また基体に対する合成樹脂被膜の密着
性が不十分で、しかも溶媒の添加、除去、回収等の工程
が入るために不純物の混入が起りやすいという不都合を
有し、またポリマー蒸着法の場合は解重合と共に分解が
起ったりして重合度が十分でないという不都合を有し、
またプラズマ重合法の場合は原料モノマー自体が分解し
たりして合成樹脂の分子設計が困難で、しかも合成樹脂
が架橋構造を含むために比較的剛直な被覆しか得られな
いという不都合を有する。(Problems to be Solved by the Invention) However, in the conventional method, it is difficult to obtain an extremely thin film in the case of the wet method, and the adhesion of the synthetic resin film to the substrate is insufficient, and further, addition and removal of the solvent, There is a disadvantage that impurities are likely to be mixed due to the steps such as recovery, and in the case of the polymer vapor deposition method, there is a disadvantage that the degree of polymerization is not sufficient due to decomposition with depolymerization,
Further, in the case of the plasma polymerization method, there is a disadvantage that the raw material monomer itself is decomposed and the molecular design of the synthetic resin is difficult, and the synthetic resin contains a crosslinked structure, so that only a relatively rigid coating can be obtained.
かかる不都合を解消するものとして、本願出願人によっ
て既に出願されている特願昭59−200257号において真空
中で合成樹脂の原料モノマーを蒸発させて、これを基体
上で重合させることから成る合成樹脂被膜の形成方法が
提案されているが、原料モノマーを２種以上用いる場合
には、これら各原料モノマーの蒸発温度にわずかでも差
があると、該原料モノマーの蒸発温度よりも低温の基体
に対しては、蒸発温度の高い方の原料モノマーの方が該
基体に対する付着確率が大きくなるため、これら原料モ
ノマーを該基体上で化学量論的な組成比でもって重合さ
せることが難しいという不都合を有する。As a solution to such inconvenience, in Japanese Patent Application No. 59-200257 already filed by the applicant of the present invention, a synthetic resin comprising evaporating a raw material monomer of the synthetic resin in a vacuum and polymerizing the same on a substrate. Although a method of forming a coating film has been proposed, when two or more kinds of raw material monomers are used, if there is a slight difference in the evaporation temperature of each of the raw material monomers, a substrate having a temperature lower than the evaporation temperature of the raw material monomers is used. For example, the raw material monomer having a higher evaporation temperature has a higher probability of adhering to the substrate, so that it is difficult to polymerize the raw material monomer on the substrate with a stoichiometric composition ratio. .
（問題点を解決するための手段） 本発明は、前記不都合を解消した合成樹脂被膜の形成方
法を提供することをその目的とするもので、その発明
は、真空中で合成樹脂の原料モノマーを蒸発させて、こ
れを基体上で重合させることから成る合成樹脂被膜の形
成方法において、該真空処理室の真空度を１〜１×10-2
Torr程度に設定すると共に、該基体の温度をこれら原料
モノマーの蒸発温度のうちの最高温度を超える温度に設
定し且つ該真空処理室の室壁内面温度を該基体の温度を
超える温度に設定した状態で該原料モノマーを蒸発させ
ることを特徴とする。(Means for Solving the Problems) An object of the present invention is to provide a method for forming a synthetic resin coating film in which the above-mentioned inconvenience is solved. In a method for forming a synthetic resin film, which comprises evaporating and polymerizing the same on a substrate, the degree of vacuum in the vacuum processing chamber is 1 to 1 × 10 -2.
The temperature of the substrate is set to about Torr, the temperature exceeds the maximum temperature among the evaporation temperatures of these raw material monomers, and the inner wall temperature of the vacuum processing chamber is set to a temperature exceeding the temperature of the substrate. In this state, the raw material monomer is evaporated.
ここで、真空処理室の真空度を１〜１×10-2Torr程度と
いう低めの真空度に設定してこれら原料モノマー同志の
衝突回数を多くすると共に基体の温度をこれら原料モノ
マーの蒸発温度のうちの最高温度を超える温度に設定す
るようにしたのは、該各原料モノマー自体では基体に接
触しても該基体に付着しないようにしておいて、これら
原料モノマー同志を衝突させて有る程度重合させてから
基体に付着させるようにして、その後基体上で最終的に
重合を完結することにより、即ち基体に対する付着確率
の異なる原料モノマー自体の基体に対する直接的な付着
を避けることによって、該基体上で化学量論的な組成比
でもってこれら原料モノマーの重合を完結させるためで
ある。また、真空処理室の室壁内面温度を基体の温度を
超える温度にしたのは、原料モノマーが該室壁内面に付
着するのを防止すると共に前記の或る程度重合した原料
モノマーが基体に付着し易いようにするためである。Here, the degree of vacuum in the vacuum processing chamber is set to a low degree of vacuum of about 1 to 1 × 10 -2 Torr to increase the number of collisions of these raw material monomers and the temperature of the substrate to the evaporation temperature of these raw material monomers. The temperature above the maximum temperature is set so that each of the raw material monomers themselves does not adhere to the base even when they come into contact with the base, and the raw material monomers are allowed to collide with each other to such an extent that they are polymerized. On the substrate by allowing it to adhere to the substrate and then finally completing the polymerization on the substrate, that is, by avoiding direct adhesion of the raw material monomers themselves having different adhesion probabilities to the substrate. This is to complete the polymerization of these raw material monomers with a stoichiometric composition ratio. Further, the temperature of the inner wall surface of the vacuum processing chamber is set to a temperature higher than the temperature of the substrate because the raw material monomer is prevented from adhering to the inner surface of the chamber wall, and the above-mentioned polymerized raw material monomer is attached to the substrate. This is to make it easier.
尚、真空処理室の真空度は原料モノマー自体の蒸気圧に
よってのみ調整するのが好ましいが、アルゴンガス等の
不活性ガスを用いてこれらの蒸気圧によって調整するよ
うにしてもよい。The degree of vacuum in the vacuum processing chamber is preferably adjusted only by the vapor pressure of the raw material monomer itself, but may be adjusted by the vapor pressure of an inert gas such as argon gas.
（実施例） 以下添附図面に従って本発明の実施例に付き説明する。Embodiments Embodiments of the present invention will be described below with reference to the accompanying drawings.
図面は本発明方法を実施する装置の一例を示すもので、
１は真空処理室を示し、該処理室１内を外部の真空ポン
プその他の真空排気系２に接続すると共に、該処理室１
内に合成樹脂の蒸着被膜を形成せしめるべき基体３を基
体ホルダ４の背面に設けられたヒータ５によって所望温
度に加熱できるようにし、また該処理室１内下位に該基
体３に対向させて合成樹脂の原料モノマーａ、ｂを蒸発
させるためのガラス製の蒸発用管６、６を導き、該各蒸
発用管６全体をその周囲に巻回されたヒータ７によって
所望温度に加熱できるようにした。また該処理室１の下
部に、該処理室１内にアルゴン等の不活性ガスを導入す
るためのガス導入管８を設け、更に該処理室１の室壁内
面1aの前面に亘らせて加熱ヒータ９を設けた。The drawings show an example of an apparatus for carrying out the method of the present invention,
Reference numeral 1 denotes a vacuum processing chamber. The inside of the processing chamber 1 is connected to an external vacuum pump or other vacuum exhaust system 2, and the processing chamber 1
The substrate 3 on which a vapor deposition coating of synthetic resin is to be formed can be heated to a desired temperature by the heater 5 provided on the back surface of the substrate holder 4, and the substrate 3 is formed in the lower part of the processing chamber 1 so as to face the substrate 3. Glass evaporation tubes 6 for evaporating the raw material monomers a and b of the resin are introduced, and the entire evaporation tubes 6 can be heated to a desired temperature by a heater 7 wound around them. . Further, a gas introducing pipe 8 for introducing an inert gas such as argon into the processing chamber 1 is provided in the lower part of the processing chamber 1, and further extends over the front surface of the chamber wall inner surface 1a of the processing chamber 1. The heater 9 was provided.
図中10はヒータ５の電源、11はヒータ７の電源、12はヒ
ータ９の電源、13は各蒸発用管６の流量調整弁、14はガ
ス導入管８の流量調整弁、15は基体３と蒸発用管６、６
との間に介在されるシャッタを示す。In the figure, 10 is the power supply of the heater 5, 11 is the power supply of the heater 7, 12 is the power supply of the heater 9, 13 is the flow rate adjusting valve of each evaporation pipe 6, 14 is the flow rate adjusting valve of the gas introduction pipe 8, and 15 is the substrate 3 And evaporation tubes 6, 6
Shows a shutter interposed between and.
ここで当該装置によるポリイミド被膜並びにポリアミド
被膜の形成につき実施例１並びに実施例２として示す。
尚、実施例１は昇華温度のあまり差のない２種の原料モ
ノマーa,bを、また、実施例２は昇華温度にかなり差の
ある２種の原料モノマーa,bを用いた場合の例として示
す。Here, the formation of the polyimide coating and the polyamide coating by the apparatus will be shown as Example 1 and Example 2.
In addition, Example 1 is an example in which two kinds of raw material monomers a and b having little difference in sublimation temperature are used, and Example 2 is an example in which two kinds of raw material monomers a and b having considerably different sublimation temperatures are used. Show as.
実施例１ まず、蒸発用管６、６の一方に原料モノマーａとしてピ
ロメリト酸二無水物と、他方に原料モノマーｂとして
４、４′−ジアミノジフェニルエーテルとを充填し、こ
れら蒸発用管６、６並びに流量調整弁13,13と共に原料
モノマーa,bを夫々加熱ヒータ７、７によって170℃±５
℃加熱する。これと同時に真空処理室１の室壁内面1aを
加熱ヒータ９によって300℃位に加熱すると共に、基体
３を加熱ヒータ５によって150℃に加熱した。Example 1 First, one of the evaporation tubes 6, 6 was filled with pyromellitic dianhydride as a raw material monomer a and 4,4′-diaminodiphenyl ether as a raw material monomer b with the other, and these evaporation tubes 6, 6 were filled. In addition, the raw material monomers a and b together with the flow rate adjusting valves 13 and 13 are heated to 170 ° C. ± 5 by heaters 7 and 7, respectively.
Heat at ℃. At the same time, the inner wall 1a of the chamber wall of the vacuum processing chamber 1 was heated to about 300 ° C. by the heater 9, and the substrate 3 was heated to 150 ° C. by the heater 5.
次いで、真空処理室１内の雰囲気ガスの全圧を、まず、
真空排気系２を介して１×10-6Torrにしてからシャッタ
15を閉じた状態で流量調整弁14を開いてガス導入管８か
らアルゴンガスを導入して該全圧を0.10Torrに設定し、
その後流量調整弁13、13を開いて蒸発用管６、６から原
料モノマーa,bの蒸気を導入し、該全圧を0.12Torrに設
定した。Next, the total pressure of the atmospheric gas in the vacuum processing chamber 1 is
Shutter after adjusting the pressure to 1 × 10 -6 Torr through the vacuum exhaust system 2.
With 15 closed, the flow rate adjusting valve 14 is opened and argon gas is introduced from the gas introducing pipe 8 to set the total pressure to 0.10 Torr,
After that, the flow rate adjusting valves 13 and 13 were opened, the vapors of the raw material monomers a and b were introduced from the evaporation tubes 6 and 6, and the total pressure was set to 0.12 Torr.
最後にシャッタ15を開けて該基体３上に原料モノマーa,
bのわずかに重合した重合体を析出させ、該基体３上で
重合反応を完結させながら所定の膜厚になったところで
シャッタ15を閉じた。この時の成膜速度は１Å/secであ
った。Finally, the shutter 15 is opened and the raw material monomer a,
The slightly polymerized polymer of b was deposited, and the shutter 15 was closed when the predetermined film thickness was reached while completing the polymerization reaction on the substrate 3. The film formation rate at this time was 1 Å / sec.
前記全圧下における原料モノマーa,bの昇華温度は共に1
00℃程度であるので、これらが該基体３上に単独で付着
することは無く、該基体３上には極めて化学量論的な組
成比で重合したポリイミド被膜が得られた。The sublimation temperatures of the raw material monomers a and b under the total pressure are both 1
Since the temperature was about 00 ° C., these did not adhere to the substrate 3 alone, and a polyimide coating film obtained by polymerizing in a very stoichiometric composition ratio was obtained on the substrate 3.
実施例２ 原料モノマーａとしてテレフタル酸ジクロリドを、原料
モノマーｂとして４、４′−ジアミノジフェニルエーテ
ルを用い、該原料モノマーａとその蒸発用管６並びに流
量調整弁13を65℃±３℃に加熱し、該原料モノマーｂと
その蒸発用管６並びに流量調整弁13を165℃±３℃に加
熱すること以外は実施例１と同様の操作を行なって基体
３上に１Å/secの成膜速度でポリアミド被膜を形成し
た。Example 2 Using terephthalic acid dichloride as the raw material monomer a and 4,4′-diaminodiphenyl ether as the raw material monomer b, the raw material monomer a, its evaporation pipe 6 and the flow rate adjusting valve 13 were heated to 65 ° C. ± 3 ° C. The same operation as in Example 1 was performed except that the raw material monomer b, its evaporation tube 6 and the flow rate adjusting valve 13 were heated to 165 ° C. ± 3 ° C. at a film forming rate of 1 Å / sec on the substrate 3. A polyamide coating was formed.
0.12Torrにおける原料モノマーａの昇華温度は10℃、ま
た原料モノマーｂの昇華温度は80℃程度であるので、こ
れらが該基体３上に単独で付着することは無く、該基体
３上には極めて化学量論的な組成比で重合したポリアミ
ド被膜が得られた。At 0.12 Torr, the sublimation temperature of the raw material monomer a is 10 ° C., and the sublimation temperature of the raw material monomer b is about 80 ° C., so that these do not adhere to the base body 3 alone, and the sublimation temperature is extremely high on the base body 3. A polyamide coating polymerized in a stoichiometric composition ratio was obtained.
（発明の効果） このように本発明によるときは、真空処理室の真空度を
１〜１×10-2Torr程度に設定すると共に、基体の温度を
２種以上の原料モノマーの蒸発温度のうちの最高温度を
超える温度に設定し且つ該真空処理室の室壁内面温度を
該基体の温度を超える温度に設定した状態で該原料モノ
マーを蒸発させるようにしたので、基体に対する付着確
率の異なる原料モノマーの該基体に対する直接的な付着
が避けられ、化学量論的な組成比で重合した合成樹脂被
膜を簡単に形成できる効果を有する。(Effects of the Invention) As described above, according to the present invention, the degree of vacuum in the vacuum processing chamber is set to about 1 to 1 × 10 −2 Torr, and the temperature of the substrate is set to one of the evaporation temperatures of two or more raw material monomers. Of the raw material having different sticking probabilities to the substrate because the raw material monomer is evaporated in a state in which the temperature of the inner wall surface of the vacuum processing chamber is set to a temperature exceeding the temperature of the substrate. Direct adhesion of the monomer to the substrate is avoided, and it has an effect that a synthetic resin film polymerized in a stoichiometric composition ratio can be easily formed.
図面は本発明合成樹脂被膜の形成方法を実施するための
装置の一例の截断面図である。 １…真空処理室 1a…室壁内面 ２…真空排気系 ３…基体 ａ、ｂ…原料モノマーThe drawing is a cross-sectional view of an example of an apparatus for carrying out the method for forming a synthetic resin film of the present invention. 1 ... Vacuum processing chamber 1a ... Chamber wall inner surface 2 ... Vacuum exhaust system 3 ... Substrate a, b ... Raw material monomer
Claims (1)
蒸発させて、これを基体上で重合させることから成る合
成樹脂被膜の形成方法において、該真空処理室の真空度
を１〜１×10-2Torr程度に設定すると共に、該基体の温
度をこれら原料モノマーの蒸発温度のうちの最高温度を
超える温度に設定し且つ該真空処理室の室壁内面温度を
該基体の温度を超える温度に設定した状態で該原料モノ
マーを蒸発させることを特徴とする合成樹脂被膜の形成
方法。1. A method for forming a synthetic resin film comprising evaporating two or more kinds of raw material monomers in a vacuum processing chamber and polymerizing the same on a substrate, wherein the vacuum degree in the vacuum processing chamber is 1 to 1. × with set to about 10 -2 Torr, exceeds the temperature of the maximum temperature set at a temperature of greater than and vacuum processing chamber of the chamber wall inner surface temperature base body of the vaporization temperature of the raw material monomers the temperature of said substrate A method for forming a synthetic resin film, characterized in that the raw material monomer is evaporated at a temperature set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10138085A JPH0718000B2 (en) | 1985-05-15 | 1985-05-15 | Method for forming synthetic resin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10138085A JPH0718000B2 (en) | 1985-05-15 | 1985-05-15 | Method for forming synthetic resin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61261322A JPS61261322A (en) | 1986-11-19 |
| JPH0718000B2 true JPH0718000B2 (en) | 1995-03-01 |
Family
ID=14299177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10138085A Expired - Lifetime JPH0718000B2 (en) | 1985-05-15 | 1985-05-15 | Method for forming synthetic resin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0718000B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11753369B2 (en) | 2017-12-01 | 2023-09-12 | Ultragenyx Pharmaceutical Inc. | Creatine prodrugs, compositions and methods of use thereof |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0266161A (en) * | 1987-12-04 | 1990-03-06 | Res Dev Corp Of Japan | Vacuum deposition device |
| JP2006251181A (en) * | 2005-03-09 | 2006-09-21 | Nitta Ind Corp | Manufacturing method of optical waveguide |
| CN102560402A (en) * | 2012-02-10 | 2012-07-11 | 肇庆市振华金冠真空设备有限公司 | Method for coating reflection cup of car lamp |
| JP6020239B2 (en) * | 2012-04-27 | 2016-11-02 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
| JP5966618B2 (en) * | 2012-05-28 | 2016-08-10 | 東京エレクトロン株式会社 | Deposition method |
| JP5862459B2 (en) * | 2012-05-28 | 2016-02-16 | 東京エレクトロン株式会社 | Deposition method |
| KR102206663B1 (en) * | 2019-12-30 | 2021-01-22 | 주식회사 지에스아이 | Appratus for deposition, Method of depositing using the same, Organic insulating material |
-
1985
- 1985-05-15 JP JP10138085A patent/JPH0718000B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11753369B2 (en) | 2017-12-01 | 2023-09-12 | Ultragenyx Pharmaceutical Inc. | Creatine prodrugs, compositions and methods of use thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61261322A (en) | 1986-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4624867A (en) | Process for forming a synthetic resin film on a substrate and apparatus therefor | |
| US3472795A (en) | Polymerization process | |
| JPH0718000B2 (en) | Method for forming synthetic resin film | |
| JPH046791B2 (en) | ||
| JPH11172418A (en) | Film forming device | |
| JP2912756B2 (en) | Apparatus and method for forming synthetic resin film | |
| JPS60197730A (en) | Formation of polyimide film | |
| JP3231373B2 (en) | Apparatus and method for forming synthetic resin film | |
| JPH0313561A (en) | Formation of polyimide resin coating film | |
| JP4283911B2 (en) | Semiconductor manufacturing apparatus and method for forming polyimide film | |
| JPH0445259A (en) | Film forming device | |
| JPH0776416B2 (en) | Method for forming polyimide resin coating | |
| JPH0615710B2 (en) | Method for forming synthetic resin film | |
| JPH0762236B2 (en) | Method for forming synthetic resin film | |
| JPH04180552A (en) | Formation of high-molecular film and device for forming this film | |
| JPH0668151B2 (en) | Vacuum contact surface treatment method inside vacuum member | |
| JPH04341559A (en) | Production of synthetic resin coating film | |
| JPH09279332A (en) | Refining method of organic compound monomer | |
| JPS61219028A (en) | Formation of liquid crystal orienting film | |
| JP2001206947A (en) | Method of forming polyimide resin membrane | |
| JPS63166961A (en) | Formation of polyimide resin coated film | |
| JP2821902B2 (en) | Method of forming low dielectric constant polyimide coating | |
| JPH06116409A (en) | Method for forming synthetic resin film | |
| JPS61219025A (en) | Formation of liquid crystal orienting film | |
| JPH01116063A (en) | Manufacture of high polymer film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |