JPH0373962B2 - - Google Patents
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- JPH0373962B2 JPH0373962B2 JP58147115A JP14711583A JPH0373962B2 JP H0373962 B2 JPH0373962 B2 JP H0373962B2 JP 58147115 A JP58147115 A JP 58147115A JP 14711583 A JP14711583 A JP 14711583A JP H0373962 B2 JPH0373962 B2 JP H0373962B2
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Description
本発明はCu系基体の表面の一部又は全部にAg
又はAg合金を被覆した電子部品材料に関するも
ので、特に部品材料に要求される諸特性を満足す
る経済的な材料提供するものである。
一般にAg又はAg合金、例えばAg−In、Ag−
Pd、Ag−Au等の合金は耐食性の良導電体で半田
付け性や電気的接続が優れており、これ等をCu
又はCu合金、例えばCu−Zn、Cu−Sn、Cu−
Be、Cu−Ti、Cu−Fe等の合金からなる基体の
表面の一部又は全部に被覆したものが電子部品材
料に用いられている。電子部品としてのスイツ
チ、コネクター等の接点、又は半導体、集積回路
等の基板、或いはリード材等は何れも半田付けや
ろう付けにより組立てられ、それ自身プリント回
路等に半田付けにより取付けられており、電子部
品材料には半田付け性が不可欠の条件になつてい
る。
Cu及びCu合金は常温で保管しても強固な酸化
皮膜を生成し、電子部品の組立工程における樹脂
モールド、キユアー、半田付け、性能調整のエー
ジング等の高温環境において厚い酸化スケールを
生成し、半田付け性を著しく阻害する。Cu及び
Cu合金の半田付けに活性フラツクスを使用する
ことを知らているが、残留フラツクスは致命的な
腐食障害の原因となるため、入念な洗浄が必要と
なり電子部品等には適用できない。また大気を遮
断して還元性雰囲気中で部品を組立てることも考
えられるが、この方法は設備的にも経済的にも実
用的でない。
電子部品材料にAg被覆Cu系材料を用いる理由
はAg又はAg合金の前記特性を利用し、高温環境
において良好な半田付け性を得るためであり、も
う一つの理由は表面に酸化皮膜が生成し難く、接
点等に要求される電気接続性が良好なことであ
る。このようなAgによる効果はAu、Pt等の貴金
属でも得ることができるが、何れもAgの10〜100
倍、或いはそれ以上高価なため、工業的には不経
済であり、通常はAg又はAg合金を2〜3μ又はそ
れ以上の厚さに被覆している。
最近電子機器の飛躍的な発展と共に、経済性の
みならず省資源の立場からもAgの節約が望まれ
ている。しかるにAgの被覆厚さを薄くすると次
のような欠陥が発生する。
(1) 製造方法及び条件にもよるが、Ag層がポー
ラスとなり、所謂ピンホールを通して基材であ
るCu又はCu合金が露出する。
(2) 固相反応により基材の卑金属成分が表面に到
達し蓄積し、Agの前記特性を劣化する。特に
この反応の進行は温度の指数函数の関係にあり
高温条件で顕著となる。
高価なAuを被覆したものでも全く同様な問題
が起り、これを防止するため基体とAu層間にNi
中間層を設けたものが実用化されており、前記欠
陥を実質的に軽減するために、通常1〜2μ又は
それ以上の厚さに中間層を設け、その上に用途に
応じて厚さ0.2〜数μのAuをメツキなどにより被
覆したものが接点等に用いられている。Agを被
覆したものでも基体とAg層間にNi中間層を設け
たものが、半導体リードフレーム、各種接点、端
子等に実用化され、通常0.5〜3μの厚さにNi中間
層を設け、ピンホール腐食を防止してAg表面を
清浄に保つと共に、基体からの卑金属の高温拡散
を防止している。しかしながら高温環境において
半田付け性を低下し、時にはAg層の剥離が報告
されている。
本発明者等はこれに鑑み種々検討の結果Au被
覆では全く起り得ないAg被覆特有の現象である
ことを知見した。即ち180℃前後の温度からAg層
中を大気中の酸素が透過し易くなり、透過酸素は
原子状のためか、特に活性でAg層下のNi表面を
酸化し、Ag層とNi層の界面の金属結合を断ち切
り、密着力を激減させる。
またAg層は半田浴に迅速に溶解し、実用条件
で1秒間に厚さ2〜3μの溶解が起る。従つて半
田付けにおいて薄いAg層が溶解し、半田と全く
濡れない硬い酸化Ni表面が露出し、半田付け性
を著しく阻害する。更にNi中間層を設けたもの
では、機械的変形に際し、AgやCuに比べて硬質
のNi層に外力が集中し、Ni層を起点にAg層の表
面に達する微小のクラツクが発生し易い。電子機
器部品では精密加工によつて造られるため、曲げ
や絞り加工において、微小のクラツクを発生し、
これが基体の露出部となつて腐食の原因となるば
かりか、腐食物の体積膨張によりクラツクが拡大
し、重大な欠陥となる。
本発明はこのような知見に基づき、これを解消
するため種々研究の結果、部品材料として要求さ
れる諸特性を満足し得る経済的なAg被覆Cu系電
子部品材料を開発したもので、Cu系基体の少な
くとも一部表面にAg又はAg合金を被覆した材料
において、基体とAg又はAg合金層間に厚さ0.01
〜0.25μのPd又はRuからなる中間層を設けたこと
を特徴とするものである。
即ち本発明はCu又はCu合金からなる線、棒、
条、板等を基体とするか又はその一部又は全部を
部品形状に加工して基体とし、その表面の一部又
は全部に厚さ0.01〜0.25μのPd又はRuからなる中
間層(以下Pd、Ru中間層と略記)を形成し、そ
の上にAg又はAg合金層(以下Ag層と略記)を
被覆したものである。
Pd又はRuはCu系基体と拡散反応し難く、かつ
耐酸化性に優れており、Ag又はAg合金被覆によ
る前記(1)及び(2)の欠陥を有効に防止する。同じ貴
金属であるAuは基体やAg層と反応し易いため前
記拡散防止の効果は期待できない。またPtやIrは
PdやRuと同様耐酸化性で拡散防止に有効である
がPdやRuに比べて10〜100倍も高価であり、か
つ電気メツキ等により薄い中間層を実用的に形成
することが困難なため非実用的でる。これに比べ
てPd又はRuはAgの5〜10倍程度の価格でAgに
次いで最も安価な貴金属であり、しかも厚さ0.1μ
の中間層としてAg層の厚さを1μ以上薄くするこ
とができることと合わせて実用的である。
しかしてPd、Ru中間層の厚さは上記経済的理
由から可及的に薄く形成することが望ましいが、
実用上は0.01〜0.25μとする。このような薄い中
間層はCu系基体成分、例えばCu、Zn、Sn等を微
量透過し、Ag中に拡散し、半田付け性を実用上
阻害することなく耐硫化性、耐摩耗性を向上し、
更に電子機器の高密化と共に重大視されていると
ころの直流回路に使用した場合に起るAgの+側
から−側へ電解的に移行して短絡を起す致命的欠
陥を抑制することができる。しかしてPdやRuは
CuやAgより硬質の金属であり、特に電気メツキ
されたPdは、メツキ時にH2を吸蔵し易く、硬質
脆化の傾向が強く、0.25μを越える過剰の厚さは
加工性を阻害し、表面の微細な割れの原因とな
り、Cu系基体の露出、酸化を起す。また0.01μ未
満と薄い場合は、前記Cu系基体成分のAg層への
拡散が過大となり、Ag層の表面に蓄積して半田
付け性を劣化する。
本発明電子部品材料は以上の構成からなり、電
気メツキ法、イオンプレーテイング法、スパツタ
リング法、真空蒸着法、機械的クラツド法又はこ
れ等の組合せ法等により造られる。特に電気メツ
キ法は簡単な設備により任意の所望部分に正確な
厚さの被覆を迅速にメツキすることができる。即
ち常法によりCu系基体を清浄化した後、Pd又は
Ruメツキ浴中で電気メツキし、次いでAg又は
Ag合金メツキ浴中で電気メツキして造られる。
Pdメツキ浴としては、Pd(NH3)2(NO2)2又はPd
(NH3)4Cl2を主成分とする中性乃至アルカリ性浴
或いは亜硫酸錯体を含有する強硫酸浴などがあ
り、これに各種添加剤を配合した市販浴を利用す
ることもできる。Ruメツキ浴としてはニトロシ
ルスルフアミン酸浴やニトロソ塩化物浴などがあ
る。またAgメツキ浴としてはシアン浴、チオシ
アン浴、ピロリン酸浴、ヨウ化物浴などがある。
以下本発明を実施例について詳細に説明する。
実施例 1
厚さ0.42mmの黄銅板(Zn35%)を常法により脱
脂、酸洗してから下記メツキ浴を用いて第1表に
示すダイオード用Agメツキリードフレーム材を
製造した。
Pdメツキ浴(田中貴金属製パラデイツクMS)
Pd 10g/
PH 8.5
浴 温 55℃
電流密度 3.0A/dm2
Ruメツキ浴(田中貴金属製ルテネツクス)
Ru 10g/
PH 1.5
浴 温 60℃
電流密度 3.0A/dm2
Niメツキ浴
Ni(SO3NH2)2 500g/
NiCl 30g/
H3BO3 30g/
PH 2.5
浴 温 50℃
電流密度 2.5A/dm2
Agストライクメツキ浴
AgCN 3g/
KCN 30g/
浴 温 20℃
電流密度 3A/dm2
Agメツキ浴
AgCN 30g/
KCN 40g/
K2CO3 20g/
浴 温 20℃
電流密度 1.5A/dm2
ダイオード用Agメツキリードフレーム材は通
常短冊状(巾5.0mm、長さ、0.5mm)に打抜き、直
角に折曲げ(R=0.5mm)、一端にSiチツプを半田
付け(95%Pb−5%Sn、温度320℃、1分間)し
た後、樹脂で封止キユアー(温度180℃、5時間、
大気中)し、しかる後プリント回路板に半田付け
される。この半田付けにおいて、温度235℃の共
晶半田浴中に5秒間デイツプしたときの濡れ面積
90%以上が要求される。
上記Agメツキリードフレーム材について保管
及び折曲げ加工による劣化を保証するため100℃
の温度で24時間加熱してから半田浴(95%Pb−
5%Sn、温度320℃)に一端を5秒間デイツプし
濡れ面積を測定した。次にこれを大気中180℃の
温度で5時間加熱してから他端を温度235℃の共
晶半田浴中に5秒間デイツプして濡れ面積を測定
した。また上記フレーム材を曲げ加工した後、端
面をラツカーでシールしてからJIS−Z−2371に
基づいて5%塩水噴霧試験を24時間行ない、曲げ
部の青色銅腐食発生状況を調べた。更にこれを定
性瀘紙上に4.0mm間隔で2本対置し、温度60℃、
湿度95%の加湿槽内において100Vの電圧を印加
し48時間後の絶縁抵抗を測定した。これ等の結果
を第1表に示す。
In the present invention, Ag is applied to part or all of the surface of a Cu-based substrate.
Or it relates to an electronic component material coated with an Ag alloy, and in particular provides an economical material that satisfies various properties required for component materials. Generally Ag or Ag alloys, e.g. Ag-In, Ag-
Alloys such as Pd and Ag-Au are corrosion-resistant, good conductors, and have excellent solderability and electrical connection.
or Cu alloys, such as Cu-Zn, Cu-Sn, Cu-
Substrates made of alloys such as Be, Cu-Ti, Cu-Fe, etc., whose surfaces are partially or completely coated, are used as materials for electronic components. Electronic components such as switches, contacts such as connectors, substrates such as semiconductors and integrated circuits, and lead materials are all assembled by soldering or brazing, and are themselves attached to printed circuits etc. by soldering. Solderability has become an essential condition for electronic component materials. Cu and Cu alloys form a strong oxide film even when stored at room temperature, and thick oxide scales are formed in high-temperature environments such as resin molding, curing, soldering, and aging for performance adjustment in the assembly process of electronic parts. It significantly impairs the adhesion. Cu and
It is known that activated flux can be used to solder Cu alloys, but residual flux causes fatal corrosion damage, requires careful cleaning, and cannot be applied to electronic components. It is also conceivable to assemble the parts in a reducing atmosphere with the atmosphere shut off, but this method is not practical in terms of equipment or economy. The reason why Ag-coated Cu-based materials are used as electronic component materials is to take advantage of the characteristics of Ag or Ag alloys and obtain good solderability in high-temperature environments.Another reason is to avoid the formation of an oxide film on the surface. However, the electrical connectivity required for contacts etc. is good. This effect of Ag can also be obtained with noble metals such as Au and Pt, but these
It is industrially uneconomical because it is twice as expensive or more expensive, and it is usually coated with Ag or an Ag alloy to a thickness of 2 to 3 μm or more. With the recent rapid development of electronic devices, it is desired to save Ag not only from an economic standpoint but also from the standpoint of resource conservation. However, when the Ag coating thickness is reduced, the following defects occur. (1) Depending on the manufacturing method and conditions, the Ag layer becomes porous, and the base material Cu or Cu alloy is exposed through so-called pinholes. (2) Base metal components of the base material reach the surface and accumulate due to solid phase reaction, degrading the above-mentioned properties of Ag. In particular, the progress of this reaction is related to an exponential function of temperature and becomes more pronounced under high temperature conditions. Exactly the same problem occurs with products coated with expensive Au, and to prevent this, Ni is added between the substrate and the Au layer.
Products with an intermediate layer have been put into practical use, and in order to substantially reduce the above-mentioned defects, the intermediate layer is usually provided with a thickness of 1 to 2 μm or more, and on top of that, a layer with a thickness of 0.2 μm is applied depending on the application. A material coated with ~several microns of Au by plating or the like is used for contacts, etc. Ag-coated products with a Ni intermediate layer between the substrate and the Ag layer have been put into practical use in semiconductor lead frames, various contacts, terminals, etc., and are usually 0.5 to 3μ thick with a Ni intermediate layer and pinholes. This not only prevents corrosion and keeps the Ag surface clean, but also prevents high-temperature diffusion of base metals from the base. However, it has been reported that solderability deteriorates in high-temperature environments, and in some cases, the Ag layer peels off. In view of this, the present inventors conducted various studies and found that this phenomenon is unique to Ag coatings and cannot occur at all with Au coatings. In other words, from a temperature of around 180°C, atmospheric oxygen easily permeates through the Ag layer, and perhaps because the permeating oxygen is atomic, it is particularly active and oxidizes the Ni surface under the Ag layer, causing the interface between the Ag and Ni layers to oxidize. It breaks the metal bonds and drastically reduces the adhesion. Moreover, the Ag layer dissolves rapidly in the solder bath, and under practical conditions, a thickness of 2 to 3 μm is dissolved in one second. Therefore, during soldering, the thin Ag layer dissolves, exposing a hard Ni oxide surface that is completely unwettable with solder, which significantly impairs solderability. Furthermore, in the case where a Ni intermediate layer is provided, during mechanical deformation, external force concentrates on the Ni layer, which is harder than Ag or Cu, and minute cracks are likely to occur starting from the Ni layer and reaching the surface of the Ag layer. Since electronic device parts are manufactured through precision machining, minute cracks may occur during bending and drawing processes.
This not only becomes an exposed part of the substrate and causes corrosion, but also the crack expands due to the volumetric expansion of the corroding material, resulting in a serious defect. The present invention is based on such knowledge, and as a result of various studies to solve this problem, we have developed an economical Ag-coated Cu-based electronic component material that can satisfy the various properties required as a component material. In materials where at least part of the surface of the substrate is coated with Ag or Ag alloy, there is a thickness of 0.01 between the substrate and the Ag or Ag alloy layer.
It is characterized by providing an intermediate layer made of Pd or Ru with a thickness of ~0.25μ. That is, the present invention provides wires, rods, and wires made of Cu or Cu alloy.
The base is a strip, plate, etc., or a part or all of it is processed into a part shape, and a part or the whole of the surface is covered with an intermediate layer (hereinafter referred to as Pd , Ru intermediate layer) is formed, and an Ag or Ag alloy layer (hereinafter abbreviated as Ag layer) is formed thereon. Pd or Ru is difficult to undergo a diffusion reaction with the Cu-based substrate and has excellent oxidation resistance, and effectively prevents the defects (1) and (2) described above due to Ag or Ag alloy coating. Since Au, which is also a noble metal, easily reacts with the substrate and the Ag layer, the above-mentioned diffusion prevention effect cannot be expected. Also, Pt and Ir
Like Pd and Ru, it has oxidation resistance and is effective in preventing diffusion, but it is 10 to 100 times more expensive than Pd and Ru, and it is difficult to practically form a thin intermediate layer by electroplating etc. It's impractical. In comparison, Pd or Ru is about 5 to 10 times as expensive as Ag, making it the cheapest precious metal after Ag.
This is practical in combination with the fact that the thickness of the Ag layer as an intermediate layer can be reduced by 1μ or more. However, it is desirable to form the Pd and Ru intermediate layers as thinly as possible for the economic reasons mentioned above.
In practice, it is set to 0.01 to 0.25μ. Such a thin intermediate layer allows trace amounts of Cu-based base components such as Cu, Zn, and Sn to pass through and diffuse into the Ag, improving sulfidation resistance and wear resistance without actually impairing solderability. ,
Furthermore, it is possible to suppress the fatal defect that occurs when Ag is used in a DC circuit, which electrolytically transfers from the + side to the - side and causes a short circuit, which is becoming more important as the density of electronic devices increases. However, Pd and Ru
It is a harder metal than Cu or Ag, and in particular, electroplated Pd easily absorbs H 2 during plating and has a strong tendency to hard embrittlement. Excessive thickness exceeding 0.25μ inhibits workability. It causes minute cracks on the surface, exposing the Cu-based substrate and causing oxidation. If the thickness is less than 0.01μ, the Cu-based base component diffuses into the Ag layer excessively, accumulates on the surface of the Ag layer, and deteriorates solderability. The electronic component material of the present invention has the above-mentioned structure and is manufactured by electroplating, ion plating, sputtering, vacuum evaporation, mechanical cladding, or a combination thereof. In particular, the electroplating method can quickly plate a coating of an accurate thickness on any desired part using simple equipment. That is, after cleaning the Cu-based substrate by a conventional method, Pd or
Electroplated in Ru plating bath, then Ag or
Produced by electroplating in an Ag alloy plating bath.
As a Pd plating bath, Pd(NH 3 ) 2 (NO 2 ) 2 or Pd
There are neutral to alkaline baths containing (NH 3 ) 4 Cl 2 as a main component, strong sulfuric acid baths containing sulfite complexes, and commercially available baths containing various additives can also be used. Ru plating baths include nitrosylsulfamic acid baths and nitroso chloride baths. Examples of Ag plating baths include cyanide baths, thiocyanate baths, pyrophosphoric acid baths, and iodide baths. The present invention will be described in detail below with reference to examples. Example 1 A brass plate (35% Zn) having a thickness of 0.42 mm was degreased and pickled by a conventional method, and then the following plating bath was used to produce the Ag plating lead frame material for diodes shown in Table 1. Pd plating bath (Tanaka Kikinzoku Paradikku MS) Pd 10g/PH 8.5 Bath temperature 55℃ Current density 3.0A/dm 2 Ru plating bath (Tanaka Kikinzoku Lutenex) Ru 10g/PH 1.5 Bath temperature 60℃ Current density 3.0A/dm 2 Ni plating bath Ni (SO 3 NH 2 ) 2 500g/ NiCl 30g/ H 3 BO 3 30g/ PH 2.5 Bath temperature 50℃ Current density 2.5A/dm 2 Ag strike plating bath AgCN 3g/ KCN 30g/ Bath temperature 20℃ Current density 3A/dm 2 Ag plating bath AgCN 30g/ KCN 40g/ K 2 CO 3 20g/ Bath temperature 20℃ Current density 1.5A/dm 2 Ag plating lead frame material for diodes is usually in the form of a strip (width 5.0 mm, length , 0.5mm), bent at right angles (R = 0.5mm), soldered a Si chip to one end (95%Pb-5%Sn, temperature 320℃, 1 minute), and then sealed with resin and cured ( Temperature 180℃, 5 hours,
(in the atmosphere) and then soldered to a printed circuit board. In this soldering, the wetted area when immersed for 5 seconds in a eutectic solder bath at a temperature of 235℃
90% or more is required. 100℃ to guarantee the above Ag lead frame material will not deteriorate due to storage and bending process.
After heating for 24 hours at a temperature of
One end was dipped in 5% Sn (temperature: 320°C) for 5 seconds and the wetted area was measured. Next, this was heated in the air at a temperature of 180°C for 5 hours, and the other end was dipped in a eutectic solder bath at a temperature of 235°C for 5 seconds to measure the wetted area. After bending the frame material, the end faces were sealed with a lacquer and a 5% salt water spray test was conducted for 24 hours in accordance with JIS-Z-2371 to examine the occurrence of blue copper corrosion at the bent portions. Furthermore, two pieces of this were placed opposite each other at a spacing of 4.0 mm on qualitative filter paper, and the temperature was 60°C.
A voltage of 100 V was applied in a humidifying tank with a humidity of 95%, and the insulation resistance was measured after 48 hours. These results are shown in Table 1.
【表】
第1表から明らかなように、Pd又はRu中間層
の厚さが0.01〜0.25μである本発明材No.3〜No.6
は何れも両半田付け性が優れ、青色銅腐食物の発
生もなく、絶縁抵抗も良好であることが判る。
これに対し中間層を形成しない比較材No.1、No.
10及びPd中間層の厚さが0.005μである比較材No.
2では大気中加熱後の共晶半田付け性が著しく低
下し、Pd又はRu中間層の厚さが厚い比較材No.7
〜8及びNi中間層を設けた比較材No.9では大気
中加熱後共晶半田付け性が低下し、曲げ加工部に
は青色銅腐食物が発生し、特に本発明材料と同等
の性能を得るためにはNi中間層を設けることな
く、Agを4μ以上厚付けする必要があることが判
る。更にPd又はRu中間層を0.5μと厚くした比較
材No.7〜8、Ni中間層を設けた比較材No.9、12、
中間層を設けることなくAgを4μ以上厚付した比
較材No.11は何れも絶縁抵抗が低下し、回路短絡の
危険性が高くなつている。
このように本発明材料は半田付け性、耐食性、
加工性、マイグレーシヨン等の特性を高度に満足
すると共にPd又はRuの厚さ0.01〜0.25μの薄い中
間層を形成することにより、厚さ3μ以上のAgを
節約できるもので、経済的に優位である。
実施例 2
厚さ0.25mmのリン青銅条を用い、常法により脱
脂、酸洗してから実施例1と同様にしてPd又は
Ruメツキを行ない、その上に厚さ1.5μのAgメツ
キを行なつて第2表に示すコネクター用Agメツ
キ接点材を製造した。
この接点材は通常プレス成形後、端部を電線と
半田付けして接続し、接点部は約100gの荷重で
プリント基板上の回路ピンに接続するもので、長
期の使用に亘り接触抵抗が10mΩを越えないこと
が条件になつている。接点部は通常の接点と同様
相手側との接触を安定化させるため、凸状の張出
し加工が施されている。
この接点材について保管及び成形加工時の劣化
を防止するため、温度60℃、湿度95%の加湿条件
で1000時間保持した後、温度235℃の共晶半田浴
中に5秒間デイツプして半田濡れ性を調べた。ま
た上記加湿条件で1000時間保持した後、250℃の
温度に10分間加熱し、続いて大気中120℃の温度
で200時間保持してから先端に半径4.0mmの半球を
有するAg棒を100gの荷重で押し当て、電流100
mAで接触抵抗を測定した。更にコネクターに成
形して同様の処理を施し、これにAgメツキした
ピン材(0.62mm角)を挿入して同様の接触抵抗を
測定した。これ等の結果を第2表に併記した。[Table] As is clear from Table 1, the present invention materials No. 3 to No. 6 in which the thickness of the Pd or Ru intermediate layer is 0.01 to 0.25μ
It can be seen that both have excellent solderability, no blue copper corrosion, and good insulation resistance. In contrast, comparative materials No. 1 and No. 1, which do not form an intermediate layer.
Comparative material No. 10 and Pd intermediate layer thickness of 0.005μ.
In No. 2, the eutectic solderability after heating in the air was significantly reduced, and in comparison material No. 7, the Pd or Ru intermediate layer was thicker.
~ 8 and comparative material No. 9 with a Ni intermediate layer, the eutectic solderability decreased after heating in the air, and blue copper corrosion was generated in the bending part, and in particular, the performance was comparable to that of the inventive material. It can be seen that in order to obtain this, it is necessary to add Ag to a thickness of 4μ or more without providing a Ni intermediate layer. Furthermore, comparative materials No. 7 to 8 with a Pd or Ru intermediate layer thickened to 0.5μ, comparative materials No. 9 and 12 with a Ni intermediate layer,
Comparative material No. 11, in which Ag was thickened by 4μ or more without providing an intermediate layer, had a lower insulation resistance and a higher risk of short circuit. In this way, the material of the present invention has excellent solderability, corrosion resistance,
It highly satisfies properties such as workability and migration, and by forming a thin intermediate layer of Pd or Ru with a thickness of 0.01 to 0.25μ, it is possible to save Ag with a thickness of 3μ or more, which is economically advantageous. It is. Example 2 Using a phosphor bronze strip with a thickness of 0.25 mm, it was degreased and pickled using a conventional method, and then treated with Pd or Pd in the same manner as in Example 1.
Ru plating was performed, and then Ag plating with a thickness of 1.5 μm was applied thereon to produce the Ag plating contact materials for connectors shown in Table 2. This contact material is usually press-formed and then connected to the electric wire by soldering the end, and the contact part is connected to the circuit pin on the printed circuit board with a load of about 100g, and the contact resistance is 10mΩ over long-term use. The condition is that it does not exceed. Like normal contacts, the contact part is protruded into a convex shape to stabilize contact with the other party. To prevent this contact material from deteriorating during storage and molding processing, it was kept under humidified conditions at a temperature of 60°C and humidity of 95% for 1000 hours, and then immersed in a eutectic solder bath at a temperature of 235°C for 5 seconds to wet the solder. I looked into gender. In addition, after holding the above humidifying conditions for 1000 hours, heating it to a temperature of 250℃ for 10 minutes, and then holding it in the air at a temperature of 120℃ for 200 hours, a 100g Ag rod with a hemisphere with a radius of 4.0mm at the tip was heated. Press with load, current 100
Contact resistance was measured in mA. Furthermore, a connector was molded and subjected to the same treatment, and an Ag-plated pin material (0.62 mm square) was inserted into it and the contact resistance was measured in the same manner. These results are also listed in Table 2.
【表】
第2表から明らかなように本発明材No.15〜16は
半田付け性及び接触抵抗の何れも良好な特性を示
す。これに対し過剰の厚さのPd又はRu中間層を
形成した比較材No.17〜18では半田付け性の劣化は
認められないが、コネクター接触抵抗が著しく増
大し、また中間層を用いない比較材No.13、19、20
からAg層の厚さを4.5μ以上とする必要があるこ
とが判る。
このように本発明によればPd又はRu中間層を
従来の常識に反して薄くすることにより、基体で
あるCu及びCu合金と被覆材であるAg又はAg合
金との組合せにおいて、特異で有用な作用を発揮
せしめ、その特性を大幅に改善し得たものであ
る。特に高温に耐え、また加工性の改善も大き
く、精密で多様な機能を要求される電子部品材料
として好適で、経済的にも優れている等工業上顕
著な効果を奏するもである。[Table] As is clear from Table 2, the present invention materials No. 15 to 16 exhibit good properties in both solderability and contact resistance. On the other hand, with comparative materials No. 17 to 18 in which an excessively thick Pd or Ru intermediate layer was formed, no deterioration in solderability was observed, but the connector contact resistance increased significantly, and compared with Material No.13, 19, 20
It can be seen from this that the thickness of the Ag layer needs to be 4.5μ or more. In this way, according to the present invention, by making the Pd or Ru intermediate layer thinner than conventional wisdom, it is possible to create a unique and useful combination of Cu or Cu alloy as a base and Ag or Ag alloy as a covering material. It has been shown to be effective and its properties have been significantly improved. In particular, it is resistant to high temperatures, has greatly improved workability, is suitable as a material for electronic parts that require precision and a variety of functions, and is economically superior, resulting in significant industrial effects.
Claims (1)
Ag合金を被覆した材料において、基体とAg又は
Ag合金層間に、厚さ0.01〜0.25μのPd又はRuか
らなる中間層を設けたことを特徴とするAg被覆
Cu系電子部品材料。 2 Ag又はAg合金層の被覆厚さを0.2〜2μとす
る特許請求の範囲第1項記載のAg被覆Cu系電子
部品材料。[Claims] 1. Ag or
In materials coated with Ag alloy, the substrate and Ag or
Ag coating characterized by providing an intermediate layer made of Pd or Ru with a thickness of 0.01 to 0.25μ between Ag alloy layers
Cu-based electronic component materials. 2. The Ag-coated Cu-based electronic component material according to claim 1, wherein the coating thickness of the Ag or Ag alloy layer is 0.2 to 2μ.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58147115A JPS6037605A (en) | 1983-08-11 | 1983-08-11 | Ag-coated cu electronic component material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58147115A JPS6037605A (en) | 1983-08-11 | 1983-08-11 | Ag-coated cu electronic component material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6037605A JPS6037605A (en) | 1985-02-27 |
| JPH0373962B2 true JPH0373962B2 (en) | 1991-11-25 |
Family
ID=15422864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58147115A Granted JPS6037605A (en) | 1983-08-11 | 1983-08-11 | Ag-coated cu electronic component material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6037605A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4834022B2 (en) * | 2007-03-27 | 2011-12-07 | 古河電気工業株式会社 | Silver coating material for movable contact parts and manufacturing method thereof |
| JP4834023B2 (en) * | 2007-03-27 | 2011-12-07 | 古河電気工業株式会社 | Silver coating material for movable contact parts and manufacturing method thereof |
| JP2014182976A (en) * | 2013-03-21 | 2014-09-29 | Enplas Corp | Electric contact and socket for electric component |
| JP6079508B2 (en) * | 2013-08-29 | 2017-02-15 | 株式会社オートネットワーク技術研究所 | Plating member, plating terminal for connector, method for manufacturing plating member, and method for manufacturing plating terminal for connector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177817A (en) * | 1983-03-26 | 1984-10-08 | 富士通株式会社 | Electric contactor |
-
1983
- 1983-08-11 JP JP58147115A patent/JPS6037605A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6037605A (en) | 1985-02-27 |
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