JPH0343228Y2 - - Google Patents

Description

[Detailed explanation of the invention] [Industrial application field] This invention does not use electrochemical means such as plating technology, but rather uses thin films such as thin material layers on various substrates (metals, semiconductors, insulators, etc.). The present invention relates to an electric field relaxation shield plate used in a thin film forming apparatus such as an ion plating method.

In general, this type of thin film forming apparatus heats the vapor deposition material to be vapor-deposited onto a substrate, etc. in a closed crucible equipped with a steam jet nozzle ^. By creating a pressure difference of at least 10 times between the gas pressure (below _Tprr ) and the vapor of the deposition material formed in the crucible by heating, and maintaining the thermal equilibrium state of the vapor of the deposition material in the crucible, the vapor Injecting vapor deposition material vapor into a low gas pressure atmosphere from an injection nozzle, forming a supercooled state due to adiabatic expansion in the vicinity of the vapor ejection, and creating lumpy atomic collective vapor (also called cluster) by condensation in a supersaturated state, This cluster is bombarded with electrons to form an ionized cluster, and a negative high voltage applied to the ion extraction electrode gives the ionized cluster kinetic energy to form a thin film layer of a predetermined material on the substrate.

[Conventional technology]

FIG. 2 is a sectional view showing a conventional thin film forming apparatus of this type disclosed in, for example, Japanese Patent Publication No. 54-9592. Reference numeral 1 denotes a vacuum chamber in which a vacuum exhaust port 2 is formed with an opening/closing pipe 3; 5 is a crucible made of a material such as graphite and containing a predetermined amount of vapor deposition substance 4; A jet nozzle 27 for jetting out the vapor of the vapor deposition material 4, that is, the neutral Krasula 18, is formed in the center of the section. Reference numeral 6 denotes a support base that supports the crucible 5 through an insulator 9; 7 a heating filament that surrounds the outer periphery of the crucible 5 at a predetermined distance and heats the crucible 5 by electron impact; A crucible heat shield plate is disposed to surround the crucible 5 and the heating filament 7 and blocks radiant heat from the crucible 5 and the heating filament 7, and is supported in the vacuum chamber 1 via an insulator 10. ing. 11
It is provided in the ionization heat shield plate 13 provided above the crucible heat shield plate 8 via the insulator 14, and emits ionization electrons for ionizing the neutral clusters 18 ejected from the ejection nozzle 27 of the crucible 5. The ionizing filament 12 is the ionizing filament 11, and the ionizing electron 1 is
16 is an accelerating electrode provided on the top of the ionization heat shield plate 13 via an insulator 17; 19 is an ionization cluster of the vapor deposition material 4 ionized by the ionization electrons 15; 20 27 is a cluster beam consisting of a neutral cluster 18 and an ionized cluster 19; 27 is attached via a sealed bearing 23 to a support bar 22 rotatably attached to a predetermined position on the ceiling of the vacuum chamber 1;
An opening/closing shutter 25 that arbitrarily shuts off the cluster beam 20 is connected to the vacuum chamber 1 via a sealed bearing 26.
A substrate holder 28 is rotatably attached to the center of the ceiling of the substrate holder, and a substrate 24 on which a deposited thin film (not shown) is formed is detachably attached.
Reference numeral 8 denotes an electric field relaxing filament disposed near the upper part of the ejection nozzle 27 of the crucible 5 from which the ejecting material is ejected, with a predetermined distance therebetween.

Since the conventional thin film forming apparatus of this kind is configured as described above, the crucible 5 is heated by thermionic electrons being emitted from the heating filament 7, and the vapor deposition material 4 inside is evaporated to form a jet nozzle. 27
The ionized electrons 15 emitted from the ionized filament 11 collide with the neutral clusters 18 ejected from the ionized filament 11 to form ionized clusters 19, and the accelerating electrode 1
6, the deposition is performed on the substrate 24 to form a deposited thin film (not shown). Note that the shutter 21 controls opening and closing of the cluster beam 20 to expose the substrate 2.
This is for adjusting the thickness of the thin film to be deposited.

[Problems to be solved by the invention] In the conventional thin film forming apparatus of this type, an electric field relaxation filament 28 is disposed near the upper part of the ejection nozzle 27 of the crucible 5 at a predetermined distance from the ejection nozzle 27.
A part of the neutral cluster 18 of the vapor deposition material 4 ejected from the ejection nozzle 27 of the crucible 5 adheres to form a droplet, and when this is deposited to a predetermined thickness, it falls from the electric field relaxation filament 28 and drops directly below it. It has the disadvantage that it collides with the existing crucible 5 or heating filament 7 and scatters, which tends to cause an abnormal situation such as a discharge phenomenon.

This invention has been made with this point in mind, and is intended to provide a thin film forming apparatus that prevents some of the neutral clusters of the vapor deposited material from adhering to the electric field relaxing filament.

[Means for solving problems]

The thin film forming device according to this invention eliminates the conventional electric field relaxation filament placed near the top of the crucible's jet nozzle at a predetermined distance from the filament, and instead integrates it with the crucible heat shield plate that surrounds the crucible. The electric field mitigation shield plate is arranged near the top of the jet nozzle of the crucible at a predetermined interval.

[Effect]

In this invention, an electric field relaxation shield plate arranged at a predetermined interval near the top of the crucible's jet nozzle is integrally coupled to a crucible heat shield plate that surrounds the crucible. The plate is always at a high temperature due to heat transfer from the crucible heat shield plate, which is always at a high temperature, and the neutral clusters of deposited substances that have adhered to the plate are instantly re-evaporated, so that they do not stick or accumulate.

[An example of the idea]

FIG. 1 shows the main parts of an embodiment of this invention, and since the same reference numerals and components are the same as those of the above-mentioned conventional device (FIG. 2), the explanation thereof will be omitted.

29 is arranged so as to surround the crucible 5 and the heating filament 7, and closes the upper opening of the crucible heat shield plate 8 that cuts off radiant heat from the crucible 5 and the heating filament 7.
With the electric field mitigation shield plate integrated with this,
A passage port 29a through which the neutral clusters 18 ejected from the crucible 5 pass is provided approximately at the center thereof. This electric field heat shield plate 29 is always at a high temperature due to heat transfer from the crucible heat shield plate 8 which is always at a high temperature, and the neutral clusters 18 ejected from the jet nozzle 27 of the crucible 5 reach this electric field relaxation shield plate 29. Even if it gets stuck, it re-evaporates instantly,
No adhesion or accumulation.

[Effect of idea]

As described above, according to this invention, the crucible heat shield plate 8 surrounding the crucible 5 has a
Since the electric field relaxation shield plates 29 disposed at a predetermined interval near the top of the jet nozzle 27 of the crucible 5 are integrally connected, the jet nozzle 27 of the crucible 5
Even if the neutral clusters 18 ejected from the air adhere to the electric field relaxation shield plate 29, they will instantly re-evaporate due to the high temperature, and will not adhere or accumulate on the electric field relaxation filament as in the conventional case. This has an excellent practical effect in that the neutral clusters that have adhered and become droplets are not degraded and abnormal situations such as discharge occur.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing an embodiment of this invention, and FIG. 2 is a sectional view showing a conventional thin film forming apparatus. In the figure, 1 is a vacuum chamber, 4 is a deposition material, 5 is a crucible, 7 is a heating filament, 8 is a crucible heat shield plate, 18 is a neutral cluster, 27 is a jet nozzle, 29 is an electric field relaxation shield plate, and 29a is a It is a passageway. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

[Scope of Claim for Utility Model Registration] (1) A crucible in a vacuum chamber that is heated by a heating filament to evaporate the deposited material contained therein and ejects neutral clusters from an ejection nozzle, and this crucible and the above-mentioned A crucible heat shield plate surrounding a heating filament is arranged, wherein the crucible heat shield plate is integrated with an electric field relaxation shield plate disposed at a predetermined interval near the top of the jet nozzle of the crucible. A thin film forming apparatus characterized in that: (2) A utility model characterized in that the electric field relaxation shield plate has a passage hole through which the neutral cluster passes approximately in the center thereof, and is integrally coupled to the crucible heat shield plate so as to close the upper opening. A thin film forming apparatus according to registered claim 1.