JP7583505B2 - Gas supply system, substrate processing apparatus and semiconductor device manufacturing method - Google Patents

Description

This disclosure relates to a gas supply system, a substrate processing apparatus, and a method for manufacturing a semiconductor device.

As an example of a substrate processing apparatus that supplies a processing gas to a substrate (hereinafter also referred to as a "wafer") and processes the substrate under predetermined processing conditions, a semiconductor manufacturing apparatus that manufactures semiconductor devices is known. In recent years, as shown in Patent Document 1 or Patent Document 2, this apparatus may use various processing gases, such as source gases that are liquid or solid at room temperature. In this case, in order to keep the source gas in a gaseous state, not only the gas supply pipe but also the valves installed in this gas supply pipe may be heated.

JP 2020-038904 A International Publication No. 2017-130850

This disclosure provides a technology that allows a source gas to be supplied to a processing chamber without causing a phase change.

According to one aspect of the present disclosure, there is provided a processing system including: a first valve that opens and closes a flow path for supplying a fluid that contributes to substrate processing to a processing chamber; a plurality of heating regions that heat the first valves; a uniform temperature section provided in the plurality of heating regions; and a member provided between the heating regions and that adjusts heat conduction between the uniform temperature sections.
The present invention provides a technique having the following features:

According to the present disclosure, the raw material gas can be supplied to the processing chamber without undergoing a phase change.

FIG. 1 is a top view illustrating an example of a substrate processing apparatus that can be suitably used in an embodiment. 1 is a vertical cross-sectional view illustrating an example of a substrate processing apparatus that can be suitably used in an embodiment. 1 is a vertical cross-sectional view illustrating an example of a substrate processing apparatus that can be suitably used in an embodiment. FIG. 2 is a vertical cross-sectional view illustrating an example of a gas supply system that is preferably used in the embodiment. FIG. 2 is a top view illustrating an example of a final valve installation portion that is preferably used in the embodiment. FIG. 6 is a longitudinal sectional view showing an example of a final valve suitably used in the embodiment, and is a longitudinal sectional view taken along line A in FIG. 5 . Fig. 7(A) is a diagram showing an example of a member provided between heating regions that is preferably used in the embodiment, and Fig. 7(B) is an example showing heat conduction by the member provided between the heating regions of Fig. 7(A). 4 is an example of a flowchart of a substrate processing process according to the embodiment. FIG. 13 is a top view illustrating a modified example of a final valve installation portion that is preferably used in the embodiment. FIG. 6 is a vertical cross-sectional view showing an example of a final valve preferably used in the embodiment, and is a vertical cross-sectional view taken along line B of FIG. 5 . Fig. 11(A) is a top view showing a schematic diagram of a modified example of a final valve installation part preferably used in the embodiment. Fig. 11(B) is a top view showing a schematic diagram of a modified example of a final valve installation part preferably used in the embodiment, in which the final valve between the adjustment parts is eliminated (removed).

Please note that all drawings used in the following description are schematic, and the dimensional relationships and ratios of each element shown in the drawings do not necessarily match those in reality. Furthermore, the dimensional relationships and ratios of each element do not necessarily match between multiple drawings.

In all the drawings, the same or corresponding components are given the same or corresponding reference symbols, and duplicate explanations are omitted. The side of the storage chamber 9 described below is the front side (front side), and the side of the transfer chambers 6A and 6B described below is the back side (rear side). Furthermore, the side facing the boundary line (adjacent surface) of the processing modules 3A and 3B described below is the inside, and the side away from the boundary line is the outside. In this embodiment, the substrate processing apparatus 2 is configured as a vertical substrate processing apparatus (hereinafter referred to as the processing apparatus) 2 that performs a substrate processing process such as heat treatment as one step in the manufacturing process of a semiconductor device.

As shown in Figures 1 and 2, the processing apparatus 2 includes two adjacent processing modules 3A and 3B. The processing module 3A includes a processing furnace 4A and a transfer chamber 6A. The processing module 3B includes a processing furnace 4B and a transfer chamber 6B. The transfer chambers 6A and 6B are disposed below the processing furnaces 4A and 4B, respectively. A transfer chamber 8 equipped with a transfer machine 7 for transferring a wafer W is disposed adjacent to the front side of the transfer chambers 6A and 6B. A storage chamber 9 for storing a pod (FOUP) 5 for storing a plurality of wafers W is connected to the front side of the transfer chamber 8. An I/O port 22 is provided in front of the storage chamber 9, and the pod 5 is loaded and unloaded into and out of the processing apparatus 2 via the I/O port 22.

Gate valves 90A and 90B are installed on the boundary walls (adjacent surfaces) between the transfer chambers 6A and 6B and the transfer chamber 8. Pressure detectors are installed in the transfer chamber 8 and the transfer chambers 6A and 6B, respectively, and the pressure in the transfer chamber 8 is set to be lower than the pressure in the transfer chambers 6A and 6B. In addition, oxygen concentration detectors are installed in the transfer chamber 8 and the transfer chambers 6A and 6B, respectively, and the oxygen concentration in the transfer chamber 8A and the transfer chambers 6A and 6B is maintained lower than the oxygen concentration in the atmosphere.

A clean unit that supplies clean air to the transfer chamber 8 is installed on the ceiling of the transfer chamber 8, and is configured to circulate, for example, an inert gas as the clean air in the transfer chamber 8. By circulating and purging the transfer chamber 8 with an inert gas, the transfer chamber 8 can be made into a clean atmosphere. This configuration can prevent particles and the like from the transfer chambers 6A and 6B from being mixed into the transfer chamber 8, and can prevent natural oxide films from being formed on the wafers W in the transfer chamber 8 and the transfer chambers 6A and 6B.

Because processing module 3A and processing module 3B have the same configuration, the following description will only focus on processing module 3A.

As shown in FIG. 2, the processing furnace 4A includes a cylindrical reaction tube 10A and a heater 12A as a heating means (heating mechanism) installed on the outer periphery of the reaction tube 10A. The reaction tube 10A is made of, for example, quartz or SiC. Inside the reaction tube 10A, a processing chamber 14A is formed for processing a wafer W as a substrate. A temperature detector 16A as a temperature detector is installed in the reaction tube 10A. The temperature detector 16A is installed upright along the inner wall of the reaction tube 10A.

Gases used for substrate processing are supplied to the processing chamber 14A by a gas supply mechanism 34 serving as a gas supply system. The gas supplied by the gas supply mechanism 34 is changed depending on the type of film to be formed. Here, the gas supply mechanism 34 includes a source gas supply section, a reactive gas supply section, and an inert gas supply section. The gas supply mechanism 34 is housed in a supply box 72, which will be described later. Note that the supply box 72 is provided in common to the processing modules 3A and 3B, and is therefore regarded as a common supply box.

The raw gas supply unit, which is the first gas supply unit, includes a gas supply pipe 36a, which is provided with, in order from the upstream direction, a mass flow controller (MFC) 38a, which is a flow rate controller (flow rate control unit), and valves 41a and 40a, which are on-off valves. The gas supply pipe 36a is connected to a nozzle 44a that penetrates the side wall of the manifold 18. The nozzle 44a is erected in the vertical direction within the reaction tube 10A, and has multiple supply holes that open toward the wafers W held in the boat 26. Raw gas is supplied to the wafers W through the supply holes of the nozzle 44a.

In the same manner, the reactive gas supply unit, which is the second gas supply unit, supplies reactive gas to the wafer W through the supply pipe 36b, the MFC 38b, the valve 41b, the valve 40b, and the nozzle 44b. The inert gas supply unit supplies inert gas to the wafer W through the supply pipes 36c, 36d, the MFCs 38c, 38d, the valves 41c, 41d, the valves 40c, 40d, and the nozzles 44a, 44b. The nozzle 44b is erected in the reaction tube 10A along the vertical direction, and has a plurality of supply holes that open toward the wafer W held in the boat 26. The reactive gas is supplied to the wafer W through the supply holes of the nozzle 44b. Note that, as the reactive gas, for example, a nitrogen-containing gas or an oxygen-containing gas is supplied to the wafer W.

The gas supply mechanism 34 is also provided with a third gas supply unit for supplying the wafer W with a reactive gas or raw material gas that contributes to the substrate processing, or an inert gas or cleaning gas that does not contribute to the substrate processing. The third gas supply unit supplies the reactive gas to the wafer W through the supply pipe 36e, the MFC 38e, the valve 41e, the valve 40e, and the nozzle 44c. The inert gas supply unit supplies the wafer W with an inert gas or cleaning gas through the supply pipe 36f, the MFC 38f, the valve 41f, the valve 40f, and the nozzle 44c. The nozzle 44c is erected in the reaction tube 10A in the vertical direction, and has a plurality of supply holes that open toward the wafer W held in the boat 26. The raw material gas is supplied to the wafer W through the supply holes of the nozzle 44c. Examples of supplying the cleaning gas to the wafer W include using the cleaning gas as an etching gas and supplying it to the wafer W, or supplying the cleaning gas to a dummy wafer (pseudo substrate) that is not a product.

Three nozzles 44a, 44b, and 44c are provided in the reaction tube 10A, and the three types of raw material gases can be supplied into the reaction tube 10A in a predetermined order or at a predetermined cycle. Valves 40a, 40b, 40c, 40d, 40e, and 40f connected to the nozzles 44a, 44b, and 44c in the reaction tube 10A are supply valves called final valves and are provided in the final valve installation section 75A described below. Hereinafter, each valve 40 provided in the final valve installation section 75A may be referred to as the first valve. Similarly, three nozzles 44a, 44b, and 44c are provided in the reaction tube 10B, and the three types of raw material gases can be supplied into the reaction tube 10B in a predetermined order or at a predetermined cycle. Valves 40a, 40b, 40c, 40d, 40e, and 40f connected to nozzles 44a, 44b, and 44c in reaction tube 10B are supply valves and are provided in final valve installation section 75B, which will be described later. Hereinafter, each valve 40 provided in final valve installation section 75B may be referred to as a second valve. Note that the above valve 40 is a general term for valves 40a to 40f, and similar terms may be used hereinafter for other elements.

The multiple gas pipes 35 on the output side of the valves 41a to 41f are branched between the valves 41a to 41f and the valves 40a to 40f into multiple gas distribution pipes 35A connected to the valves 40a, 40b, 40c, 40d, 40e, and 40f of the reaction tube 10A, and multiple gas distribution pipes 35B connected to the valves 40a, 40b, 40c, 40d, 40e, and 40f of the reaction tube 10B. The multiple gas pipes 35 can be considered as a common gas pipe for the reaction tubes 10A and 10B.

An exhaust pipe 46A is attached to the manifold 18A. A vacuum pump 52A as a vacuum exhaust device is connected to the exhaust pipe 46A via a pressure sensor 48A as a pressure detector (pressure detection unit) that detects the pressure of the processing chamber 14A and an APC (Auto Pressure Controller) valve 50A as a pressure regulator (pressure adjustment unit). With this configuration, the pressure of the processing chamber 14A can be adjusted to a processing pressure according to the processing. The exhaust system A is mainly composed of the exhaust pipe 46A, the APC valve 50A, and the pressure sensor 48A. The exhaust system A is stored in an exhaust box 74A described later. One vacuum pump 52A may be installed in common to the processing modules 3A and 3B.

The processing chamber 14A houses a boat 26A as a substrate holder that vertically supports multiple wafers W, for example 25 to 150 wafers W in a shelf-like manner. The boat 26A is supported above the insulating part 24A by a rotating shaft 28A that penetrates the lid part 22A and the insulating part 24A. The rotating shaft 28A is connected to a rotating mechanism 30A installed below the lid part 22A, and the rotating shaft 28A is configured to be rotatable while hermetically sealing the inside of the reaction tube 10A. The lid part 22A is driven vertically by a boat elevator 32A as a lifting mechanism. As a result, the boat 26A and the lid part 22A are lifted and lowered together, and the boat 26A is loaded and unloaded from the reaction tube 10A.

The transfer of the wafer W to the boat 26A is performed in the transfer chamber 6A. As shown in FIG. 1, a clean unit 60A is installed on one side of the transfer chamber 6A (the outer side of the transfer chamber 6A, the side opposite to the side facing the transfer chamber 6B), and is configured to circulate clean air (e.g., inert gas) in the transfer chamber 6A. The inert gas supplied to the transfer chamber 6A is exhausted from the transfer chamber 6A by an exhaust unit 62A installed on the side facing the clean unit 60A across the boat 26A (the side facing the transfer chamber 6B), and is resupplied from the clean unit 60A to the transfer chamber 6A (circulation purge). The pressure in the transfer chamber 6A is set to be lower than the pressure in the transfer chamber 8. In addition, the oxygen concentration in the transfer chamber 6A is set to be lower than the oxygen concentration in the atmosphere. With this configuration, it is possible to suppress the formation of a natural oxide film on the wafer W during the transfer operation of the wafer W.

A controller 100 that controls the rotation mechanism 30A, boat elevator 32A, MFC 38a-f of the gas supply mechanism 34, valves 41a-f, 40a-f, and APC valve 50A is connected to them. The controller 100 is, for example, a microprocessor (computer) equipped with a CPU, and is configured to control the operation of the processing device 2. An input/output device 102 configured as, for example, a touch panel is connected to the controller 100. One controller 100 may be installed in each of the processing modules 3A and 3B, or one controller 100 may be installed in common.

Next, we will explain the rear configuration of the processing device 2.

As shown in FIG. 1, maintenance ports 78A and 78B are formed on the rear side of the transport chambers 6A and 6B, respectively. Maintenance port 78A is formed on the transport chamber 6B side of the transport chamber 6A, and maintenance port 78B is formed on the transport chamber 6A side of the transport chamber 6B. Maintenance ports 78A and 78B are opened and closed by maintenance doors 80A and 80B. Maintenance doors 80A and 80B are configured to be rotatable around hinges 82A and 82B as pivots. Hinge 82A is installed on the transport chamber 6B side of the transport chamber 6A, and hinge 82B is installed on the transport chamber 6A side of the transport chamber 6B. Maintenance areas are formed on the processing module 3B side on the rear side of the processing module 3A and on the processing module 3A side on the rear side of the processing module 3B.

As shown by imaginary lines, the maintenance doors 80A, 80B are rotated horizontally around hinges 82A, 82B toward the rear of the rear side of the transport chambers 6A, 6B to open the rear maintenance ports 78A, 78B. The maintenance door 80A is configured so that it can be opened up to 180° to the left toward the transport chamber 6A. The maintenance door 80B is configured so that it can be opened up to 180° to the right toward the transport chamber 6B. The maintenance doors 80A, 80B are also configured to be removable, and may be removed for maintenance.

A utility system 70 is installed near the rear of the transfer chambers 6A and 6B. The utility system 70 is located between the maintenance rears A and B. The utility system 70 includes final valve installation sections 75A and 75B, which are supply valve boxes serving as valve assemblies, exhaust boxes 74A and 74B, a supply box 72, and controller boxes 76A and 76B. The utility system 70 is composed of, in order from the housing side (transfer chambers 6A and 6B side), exhaust boxes 74A and 74B, a supply box 72, and controller boxes 76A and 76B.

The final valve installation sections 75A and 75B are provided above the exhaust boxes 74A and 74B. The maintenance ports of each box in the utility system 70 are formed on the maintenance area A and B sides, respectively. The supply box 72 is located adjacent to the side of the exhaust box 74A opposite to the side adjacent to the transport chamber 6A, and the supply box 72B is located adjacent to the side of the exhaust box 74B adjacent to the side adjacent to the transport chamber 6B.

For example, in processing module 3A, the final valve installation section 75A where the first valve of the gas supply mechanism 34 (valves 40a, 40b, and 40c located at the most downstream of the gas supply system) is installed is located above the exhaust box 74A. With this configuration, the piping length from the first valve to the processing chamber can be shortened, thereby improving the quality of the film formation. Although not shown, in addition to valves 40a, 40b, and 40c, valves 40d, 40e, and 40f are also located in the final valve installation section 75A. Although not explained, the processing module 3B has a similar configuration.

With reference to FIG. 4, we will explain the gas supply system 34 that supplies nitrogen (N2) gas as an inert gas, a reaction gas, a raw material gas, and a cleaning gas (GCL). Note that the configuration of the final valve installation section 75A is the same as that of the final valve installation section 75B, and therefore the description of the configuration of the final valve installation section 75B will be omitted.

The raw material gas can be supplied to the nozzles 44a of the reaction tubes 10A and 10B via the valve 42a, the MFC 38a, the valve 41a, and the valve 40a of the final valve installation sections 75A and 75B provided near the processing chambers 14A and 14B.

The reaction gas can be supplied to the nozzles 44b of the reaction tubes 10A and 10B via the valve 42b, the MFC 38b, the valve 41b, and the valve 40b of the final valve installation parts 75A and 75B provided near the processing chambers 14A and 14B. The reaction gas can also be supplied to the nozzles 44c of the reaction tubes 10A and 10B via the valve 41b2 and the valve 40f of the final valve installation parts 75A and 75B.

N2 gas as an inert gas can be supplied to the nozzle 44a of the reaction tubes 10A and 10B via the valve 42d, MFC 38c, valve 41c, and valve 40c of the final valve installation parts 75A and 75B provided near the processing chambers 14A and 14B. In addition, N2 gas can be supplied to the nozzle 44b of the reaction tubes 10A and 10B via the valve 42d, MFC 38d, valve 41d, and valve 40d of the final valve installation parts 75A and 75B. In addition, N2 gas can be supplied to the nozzle 44c of the reaction tubes 10A and 10B via the valve 42d, MFC 38f, valve 41f, and valve 40f of the final valve installation parts 75A and 75B.

The cleaning gas GCL can be supplied to all nozzles 44a, 40b, and 40c of the reaction tubes 10A and 10B via valve 42g, MFC 38g, valve 41g, and valves 40g, 40g2, and 40g3 of the final valve installation sections 75A and 75B.

In addition, valve 41a2 downstream of MFC 38a, valve 41b3 downstream of MFC 38b, and valve 41g2 downstream of MFC 38g are connected to the exhaust system ES.

As shown in FIG. 4, the gas pipes 35, which are distribution pipes downstream of the gas supply system 34, are branched into a plurality of gas distribution pipes 35A connected to a final valve installation section 75A, and a plurality of gas pipes 35B connected to a final valve installation section 75B. After branching, the gas distribution pipes 35A and the gas pipes 35B have equal lengths. The gas pipes 35 are appropriately equipped with heaters, filters, check valves (non-return valves), buffer tanks, etc.

The first valve group of the processing module 3A, valves 40a-, 40d, 40f, 40g, 40g2, and 40g3, are provided before the three nozzles (also called injectors) 44a, 44b, and 44c of the reaction tube 10A of the processing module 3A, and the gas supply to the injectors can be directly operated by the controller 100. The first valve group (valves 40a-, 40d, 40f, 40g, 40g2, and 40g3) in FIG. 4 can supply multiple gases simultaneously (i.e., mixed) to one injector (44a, 44b, and 44c). In addition, the cleaning gas GCL from one distribution pipe is configured to be supplied to all injectors (44a, 44b, and 44c). The first valve group of processing module 3B, which consists of valves 40a-40d, 40f, 40g, 40g2, and 40g3, has the same configuration as the first valve group of processing module 3A (valves 40a-, 40d, 40f, 40g, 40g2, and 40g3).

As shown in FIG. 4, all fluids that contribute to the processing of the wafer W and fluids that do not contribute to the processing of the wafer W are configured to pass through this final valve installation section 75A (75B) and be supplied to the processing chamber 14A (14B). Here, the fluids that contribute to the processing of the wafer W include processing gases including raw material gases, reaction gases, modifying gases, etching gases, etc., or mixed gases that combine these, or mixed gases of processing gases and inert gases. Also, the fluids that do not contribute to the processing of the wafer W are inert gases. Furthermore, in this embodiment, cleaning gases are also included as fluids that do not contribute to the processing of the wafer W.

Next, the final valve installation section 75 in which the final valve 40 is disposed in one embodiment of the present disclosure will be described with reference to FIG. 5. Note that although the configuration is not the same as that in FIG. 4, FIG. 5 is a diagram for explanatory purposes and does not need to have the same configuration as FIG. 4. The final valve installation section 75B has the same configuration as the final valve installation section 75A, so its description will be omitted here and will be described below in relation to the final valve installation section 75A.

Figure 5 is an illustration (one example) of a top view of the final valve installation section 75, where an elongated rectangle (square) drawn with imaginary lines (dotted lines) indicates the heater HT as the heating section (or heating means), and a circle drawn with solid lines indicates the heating area H. Heating areas H1 to H3 are provided for the heaters HT1 to HT3 and the thermocouples TC1 to TC3 as temperature sensors (not shown), respectively, and a connecting sheet is placed between each heating area H as a member for adjusting thermal conduction. Heating areas H1 to H3 are formed for each of the heaters HT1 to HT3, which are the heating means. In Figure 5, the connecting sheet is shown by a solid line between the heating areas H. The heater HT is not visible from the outside, but is shown by an imaginary line (dotted line) for convenience in explaining the heating area H. Here, the heating area H is a general term for the heating areas H1 to H3, and when it is referred to as the heating area H, it indicates either the entire heating area H1 to H3 or any one of the heating areas H1 to H3.

By heating with each heater HT, the temperature of the final valve installation section 75A is controlled to be equal to or higher than a predetermined temperature. In particular, when liquid or solid raw materials are used at room temperature, the temperature is controlled to be equal to or higher than the vaporization temperature (or sublimation temperature) of these raw materials. In addition, each heater HT is configured to be individually controllable. Here, even if the heating area H can be heated evenly because there is a heat equalizing plate as a heat equalizing section, when there are multiple heating areas H, there remains a concern that the air layer between the heating areas H (between the heat equalizing plates) will easily dissipate heat and temperature unevenness will easily occur. However, in FIG. 5, a connecting sheet is placed between each heating area H as a member for adjusting the heat conduction between the heat equalizing sections, so that temperature unevenness can be suppressed. Details will be described later.

6 and 10, the configuration and operation of the first valve 40 group as the first valve group in one embodiment of the present disclosure will be described. The first (second) valve 40 in the final valve installation section 75A (75B) is the valve installed at the location (downstream side) closest to the processing chamber 14A (14B) among the valves installed in the piping communicating with the processing chamber 14A (14B). Here, the final valve installation section 75A (75B) includes a plurality of valves 40 as the final valve group as the first valve group, and is configured to include, in order from the lowest in the vertical direction, a base section, a heat equalizing plate as a heat equalizing section, a block section including a flow path through which a fluid that contributes to the processing of the wafer W and a fluid that does not contribute to the processing of the wafer W flow, a valve section that drives (up and down) a valve not shown to open and close the flow path, and a flange section provided between the block section and the valve section. In addition, the first valve 40 as the first valve is configured to include the above-mentioned flange section and the above-mentioned valve section. Between the heat equalizing plates, a member (hereinafter sometimes referred to as a connecting sheet) is provided to adjust the heat conduction between the heat equalizing parts described later. The material of the heat equalizing plate is an alloy, which will be described later. The flow paths shown in Figures 6 and 10 are examples. In Figures 6 and 10, the details of the piping between the first valves 40 and the flow paths in the block parts are omitted, but various flow paths are formed inside by combining various shapes of the block parts. Openings through which fluid flows are provided in the block parts. When gas flows through the openings of the block parts, flow paths such as branching and merging are formed. In Figure 5, the arrangement is divided into two and three rows because the first valves 40 are arranged with space efficiency in mind in order to accommodate the final valve installation part 75A in a limited space.

The base part is provided in common to the first valve 40 shown in Figure 6. When combining general-purpose valves, the valves are connected with joints, which requires a large amount of space, but by using this base part, a space-saving valve integration structure is realized. Specifically, it is possible to arrange the soaking part and the block part adjacent to each other on the base part, and it is possible to form the first valve group 40 in Figure 5. Then, the first valve 40 can be combined with another first valve 40 adjacent to it via the block part, and various flow paths can be formed within each block part.

The soaking section is divided into heating regions H, and as shown in FIG. 6, a heating section HT is provided inside as a cartridge heater. The soaking section is made of an aluminum block made of an aluminum alloy, and holes are formed inside to install the heating section HT. At this time, there is a certain limit to the size because the aluminum is drilled to make through holes. For this reason, when the final valve installation section 75A becomes large, multiple heating sections HT are provided and heating regions H are formed. In this way, the soaking section is divided into heating regions H. Here, a connecting sheet is inserted between each heating region H (at the boundary between heating region H1 and heating region H2) to prevent heat loss at the boundary between the heating regions, thereby preventing the occurrence of cold spots between the heating regions H.

As shown in FIG. 10, a temperature sensor is installed in a leak port adjacent to the gas flow path formed in the block or flange. This allows the temperature sensor to be placed very close to the flow path, making it possible to detect a temperature close to the actual gas temperature. The leak port is a port for attaching a check tool to check for gas leaks. The periphery of the portion where the gas flow path in the flange and the gas flow path in the block are connected is sealed by a seal portion to isolate the flow path from the outside, and the flange and block are fixed together. As an example, the flange and block are made of SUS (Stainless Used Steel). Although not shown, in this embodiment, a set of multiple temperature sensors and thermoswitches (overheating switches) is provided.

In Figures 6 and 10, the gas supply can be started and stopped by opening and closing the gas flow path by operating a valve (e.g., a diaphragm valve) provided in a valve section (not shown). As shown in Figure 10, the input or output side of the block section is configured to be connectable to another first valve 40 (flange section) (not shown). The flow paths at the input and output ends of the block section are large because the seal section communicates with a leak port provided in the flange section when the seal section is connected to the flange section. This configuration makes it possible to check for leaks from the seal section.

As shown in FIG. 6, the configuration of the first valve group 40 allows the final valve installation section 75A, which has an integrated valve structure, to be heated evenly at a predetermined temperature in response to the recent trend toward more miniaturized and complicated devices, which has led to the use of a wide variety of raw materials and the complicated structure of the gas supply system 34. This allows the fluid that contributes to the processing of the wafer W to be stably supplied to the processing chamber 14A without causing a phase change such as re-liquefaction. The configuration of the connecting sheet will be described later.

The storage unit 104 may be a storage device (hard disk or flash memory) built into the controller 100, or may be a portable external recording device (magnetic tape, magnetic disks such as flexible disks or hard disks, optical disks such as CDs or DVDs, magneto-optical disks such as MOs, or semiconductor memories such as USB memories or memory cards). The program may be provided to the computer using a communication means such as the Internet or a dedicated line. The program is read from the storage unit 104 as required by instructions from the input/output device 102, and the controller 100 executes processing according to the read recipe, so that the processing device 2 executes the desired processing under the control of the controller 100. The controller 100 is stored in a controller box 76 (76A, 76B). When one controller 100 is installed in each of the processing modules 3A and 3B, the controller 100 (A) that controls the processing module 3A is installed in the controller box 76A, and the controller 100 (B) that controls the processing module 3B is installed in the controller box 76B.

Next, a process (film formation process) for forming a film on a substrate using the processing apparatus 2 described above will be described with reference to FIG. 8. Here, an example will be described in which a film is formed on a wafer W by supplying a first processing gas as a raw material gas and a second processing gas as a reactive gas to the wafer W. In the following description, the operation of each part constituting the processing apparatus 2 is controlled by the controller 100.

In the film formation process of this embodiment, a film is formed on the wafer W by repeating a predetermined number of times (one or more times) the steps of supplying a source gas to the wafer W in the processing chamber 14A, removing the source gas (residual gas) from the processing chamber 14A, supplying a reactive gas to the wafer W in the processing chamber 14A, and removing the reactive gas (residual gas) from the processing chamber 14A.

(Substrate loading S1 (wafer charging and boat loading))
The gate valve 90A is opened, and the wafers W are transferred to the boat 26A. When a plurality of wafers W are loaded into the boat 26A (wafer charge), the gate valve 90A is closed. The boat 26A is carried into the processing chamber 14 (boat load) by the boat elevator 32A, and the lower opening of the reaction tube 10A is air-tightly closed (sealed) by the lid 22A.

(Pressure adjustment and temperature adjustment S2)
The processing chamber 14A is evacuated (reduced pressure exhaust) by the vacuum pump 52A so as to reach a predetermined pressure (vacuum level). The pressure in the processing chamber 14A is measured by the pressure sensor 48A, and the APC valve 50A is feedback-controlled based on the measured pressure information. The wafer W in the processing chamber 14A is heated by the heater 12A so as to reach a predetermined temperature. At this time, the power supply to the heater 12A is feedback-controlled based on temperature information detected by the temperature detection unit 16A so as to achieve a predetermined temperature distribution in the processing chamber 14A. The rotation mechanism 30A also starts to rotate the boat 26A and the wafer W.

(Film formation process)
[Raw material gas supply step S3]
When the temperature of the processing chamber 14A is stabilized at a preset processing temperature, a source gas is supplied to the wafer W in the processing chamber 14A. The source gas is controlled to a desired flow rate by the MFC 38a, and is supplied to the processing chamber 14A via the gas supply pipe 36a, the valves 41a and 40a, and the nozzle 44a.

[Raw material gas exhaust step S4]
Next, the supply of the source gas is stopped, and the processing chamber 14A is evacuated to a vacuum by the vacuum pump 52A. At this time, N2 gas may be supplied as an inert gas from the inert gas supply unit to the processing chamber 14A (inert gas purge).

[Reaction gas supply step S5]
Next, a reactive gas is supplied to the wafer W in the processing chamber 14A. The reactive gas is controlled to a desired flow rate by the MFC 38b, and is supplied to the processing chamber 14A via the gas supply pipe 36b, the valves 41b and 40b, and the nozzle 44b.

[Reaction gas exhaust step S6]
Next, the supply of the reaction gas is stopped, and the processing chamber 14A is evacuated to a vacuum by the vacuum pump 52A. At this time, N2 gas may be supplied from the inert gas supply unit to the processing chamber 14A (inert gas purge). By performing the cycle of the above-mentioned four steps a predetermined number of times (one or more times), a desired film can be formed on the wafer W.

After the film is formed, N2 gas is supplied from the inert gas supply unit, the inside of the processing chamber 14A is replaced with N2 gas, and the pressure in the processing chamber 14A is returned to normal pressure (return to atmospheric pressure S7). Then, the boat elevator 32A lowers the lid 22A, and the boat 26A is removed from the reaction tube 10A (boat unload S8). Then, the processed wafers W are removed from the boat 26A (wafer discharge S9).

The wafer W may then be stored in the pod 5 and removed from the processing apparatus 2, or may be transferred to the processing furnace 4B, where substrate processing such as annealing may be performed continuously. When processing the wafer W in the processing furnace 4B immediately after processing the wafer W in the processing furnace 4A, the gate valves 90A and 90B are opened, and the wafer W is directly transferred from the boat 26A to the boat 26B. The wafer W is then loaded and unloaded into the processing furnace 4B in the same manner as the substrate processing in the processing furnace 4A described above. Furthermore, the substrate processing in the processing furnace 4B is performed in the same manner as the substrate processing in the processing furnace 4A described above, for example.

Next, using Figures 7(A) and 7(B), we will explain, for example, the member provided at the boundary (boundary portion) between heating area H1 and heating area H2. The connecting sheet as a member shown in Figure 7(A) is in sheet form, but it is not necessary to be limited to this form. In addition, the material should have a thermal conductivity lower than that of the heat equalizing plate (aluminum alloy) and higher than that of air, and it is preferable to construct it from alumina, SUS, etc., for example.

As shown in Figure 7(A), the connecting sheet is configured with large holes on the upper side and small holes on the lower side, creating a difference in thermal conductivity between the top and bottom. This difference in thermal conductivity between the top and bottom of the connecting sheet actively heats up the bottom side of the heat equalizer plate, and after the bottom side has been heated uniformly, it helps to uniform the temperature of the heat equalizer plate by gradually transferring heat to the top side.

Specifically, as shown in FIG. 7(B), far from the temperature sensor (lower part of the heat equalizer plate), the contact area between heating area H1 and heating area H2 is increased via the connecting sheet, promoting heat conduction (indicated by arrows) and facilitating heating of the gap between heating areas H, while close to the temperature sensor (upper part), the contact area between heating area H1 and heating area H2 is reduced via the connecting sheet, suppressing heat conduction (indicated by arrows) and reducing the effects of thermal interference.

As shown in FIG. 7B, in this embodiment, the thermal conductivity is made different in the vertical direction between the upper and lower parts of the soaking section by using a connecting sheet, but this is not limited to this form. For example, the thermal conductivity in the vertical direction may be made different in three stages: the upper, middle, and lower parts. Also, a connecting sheet that gradually changes thermal conductivity in the vertical direction may be provided between heating area H1 and heating area H2.

Needless to say, since it is only necessary to make the thermal conductivity different above and below the soaking area, it is also possible to place holes only on the upper side of the connecting sheet. Furthermore, the shape of the connecting sheet is not limited to holes (circles) and may be polygonal (triangle or larger), star-shaped, diamond-shaped, or sector-shaped. Furthermore, it may be not only figures but also letters, numbers, or combinations thereof. The shapes above and below the soaking area may be different, and figures may be combined with letters or numbers.

In addition, since it is only necessary to make the thermal conductivity different in the vertical direction between the soaking parts, the upper and lower sides of the connecting sheet may be made of different materials. The thermal conductivity of the upper material needs to be lower than that of the lower material. They do not have to be made of the same material, and the upper side may be made of SUS, which has low thermal conductivity, and the lower side may be made of alumina, which has higher thermal conductivity than SUS.

In this way, by using the connecting sheet in this embodiment to vary the thermal conductivity in the vertical direction of the heating area, the heating uniformity of the final valve installation section 75A can be improved, and the effect of preventing re-liquefaction (or re-solidification) of the fluid (e.g., gas) flowing through the flow path or piping in the block section or flange section can be obtained.

So far, we have described the case where each heating region H is heated to the same temperature, but in FIG. 5, for example, the set temperatures may differ between heating region H1 and heating region H2. Therefore, the heating part HT is configured to be able to heat to a set temperature for each heating region H. In addition, the heating part HT is configured to be able to heat to a preset temperature depending on a specific gas flowing through a flow path provided in the heating region H. Specifically, the set temperature may differ for each heating region H of the final valve installation part 75A depending on the type of gas flowing in the heating region H. For example, each heating region may be controlled to a different temperature depending on the vaporization temperature of the fluid that contributes to film formation.

For example, in FIG. 5, when raw material gas A with a vaporization temperature of A°C flows through heating region H1 and raw material gas B with a vaporization temperature of B°C (B<A) flows through heating region H2, each heating region H can be heated evenly to a vaporization temperature of A°C or higher of raw material gas A, which has a relatively high vaporization temperature. However, depending on the gas type, if the vaporization temperature is too high, there is a concern that excessive reaction will occur and the risk of corrosion of piping, etc. will increase. Therefore, it is preferable to control the temperature so that it is almost close to the vaporization temperature (close to the vapor pressure curve) rather than being made too high. Generally, when the vaporization temperature is A°C, an overheating switch (thermoswitch) is installed at a temperature slightly higher than the vaporization temperature (typically 10% or less), and it is monitored to see if it is being controlled to an appropriate temperature close to the vaporization temperature.

In addition, because the temperatures of heating area H1 (set temperature A°C) and heating area H2 (set temperature B°C) are different, there is some concern that cold spots may occur between heating area H1 and heating area H2. However, in this embodiment, a connecting sheet is provided at the boundary between heating area H1 and heating area H2 to prevent the occurrence of cold spots, and by making the thermal conductivity different in the vertical direction between the soaking areas, each heating area H is heated to a temperature above the set temperature, which has the effect of preventing re-liquefaction of raw material gas A and raw material gas B.

In this case, it goes without saying that the final valve installation section 75 may be configured separately for each heating region H.

(Variation 1)
The first modified example will be described with reference to FIG. 9. The difference between FIG. 9 and FIG. 5 is that there is no heating section. That is, the final valve installation section 75C shown in FIG. 9 has the same configuration as FIG. 5, except that the final valve group (a group of a plurality of third valves 40) as the third valve group is not heated. This modified example is configured to provide two parts, the final valve installation section 75A (or 75B) and the final valve installation section 75C, and supply the raw material, which is liquid or solid at room temperature, as gas through the final valve installation section 75A (or 75B) since it is necessary to heat the raw material to a temperature higher than the vaporization temperature (or sublimation temperature) in order to maintain the vaporized or sublimated state, and supply the raw material, which is liquid or solid at room temperature, as gas through the final valve installation section 75A (or 75B), and supply the fluid (gas) which is gaseous at room temperature to the processing chamber 14A through the final valve installation section 75C.

With this configuration, as shown in FIG. 5, all gas supplied to the processing chamber 14A passes through the final valve installation section 75A (or 75B), and compared to the case where the gas is heated to a level that does not need to be heated, the final valve installation section 75A can be simplified. In addition to saving space, it is also possible to reduce the power consumed to heat the gas evenly to a specified temperature.

Furthermore, because the gaseous fluid (gas) at room temperature is supplied to the processing chamber 14A via the final valve installation section 75C, the final valve installation section 75A can be made compact, and the number of heaters used (total number of thermocouples) can be reduced. Also, depending on the raw material gas used, unnecessary heater output can be reduced.

For example, a final valve installation section 75 for passing gases that contribute to the processing of the substrate, such as raw material gas, reactive gas, modifying gas, etc., or a mixture of these with an inert gas, a final valve installation section for passing an inert gas that does not contribute to the processing of the substrate, and a final valve installation section for passing a cleaning gas that does not contribute to the processing of the substrate, or a mixture of this cleaning gas and an inert gas, may be provided separately. By distributing them in this way, each final valve installation section can be made compact, and the number of heaters used (total number of thermocouples, etc.) can be reduced. In addition, depending on the raw material gas used, unnecessary heater output can be reduced. The final valve for passing an inert gas that does not contribute to the processing of the substrate, and the final valve for passing a cleaning gas that does not contribute to the processing of the substrate, or a mixture of this cleaning gas and an inert gas, can be referred to as a second valve or a second valve group.

Needless to say, the modified example shown in FIG. 9 also includes a heating section that is not heated. Also, it is preferable to place a thermocouple or the like to monitor the temperature of the final valve installation section 75.

(Variation 2)
Next, a final valve installation section 75 in which the first valve group 40 in the modified example of the present disclosure is arranged will be described with reference to Fig. 11. The configuration of the first valve 40 and each part constituting the first valve group 40 are the same as those of the first valve group 40 arranged in the final valve installation section 75 shown in Fig. 5, so that description will be omitted here and differences from the configuration of the final valve installation section 75 in Fig. 5 will be mainly described.

In Fig. 11(A), the number of first valves 40 in the final valve installation section 75A is the same, heater HT4 is used instead of heater HT2, and heater HT1 is removed. Here, heater HT3 and heater HT4 are configured to form heating areas H3 and H4, respectively, and the ranges of heating areas H3 and H4 are the same. In reality, it is not possible to generalize about differences in the power applied to heater HT, but hereafter, the explanation will be given on the assumption that heater HT3 and heater HT4 have the same heating capacity. In Fig. 11(B), heater HT3 and heater HT4 are similar, but the respective heating areas H are omitted. Compared to Fig. 5, Fig. 11 has only two heaters HT, and energy saving effects can be expected.

On the other hand, in FIG. 5, it is possible to heat the first valve 40 provided in the final valve installation section 75A using the heater HT, but in FIG. 11, there is a high possibility that the heater HT will not be able to heat the first valve 40, which is located between the two connecting sheets. Therefore, in FIG. 11(B), a configuration in which the first valve 40 is not provided between the two connecting sheets is considered.

As shown in FIG. 11(B), at least the main body portion (valve portion and flange portion) of the first valve 40 is not placed between the two connecting sheets, which prevents fluid from flowing. This allows the heating area H3 and heating area H4 to be separated.

It is also possible to configure the device without a connecting sheet, but if the temperature difference between the unheated and heated parts is too large, there is a risk of a large amount of heat escaping between the two connecting sheets, so it is preferable to provide a connecting sheet. In this case, the connecting sheet acts as a heat insulator, so it is preferable that there are no slits or cutouts as shown in Figure 7.

(Example)
Next, the configuration of the first valves 40 in the final valve installation section 75A and the fluids that flow through the first valves will be described with reference to Figures 4, 5, and 11. The same applies to the final valve installation section 75B, although this will not be described here.

Example 1
Next, in FIG. 5, the power ratio of each heating region H formed by heating each heater HT is made the same. For example, HT1:HT2:HT3 are heated with power of 1:3:3. In FIG. 5, as shown as heating regions H2 and H3, HT2 and HT3 are configured to be able to heat a block of six first valves 40, respectively, and HT1 is configured to heat a block of a group of valves 40 (two first valves 40). Then, a connecting sheet is installed between each heating region (between each block). This allows the process gas in the final valve installation portion 75A to be heated to a predetermined temperature or higher. Therefore, for example, it can be heated to a temperature higher than the vaporization temperature (or sublimation temperature) of the gas flowing through each first valve 40.

In FIG. 5, the types of fluids flowing through the heating regions H2 and H3 formed by the heaters HT2 and HT3, respectively, may be different. For example, the first valves 40 group constituting the heating region H2 may be combined with a block section (not shown) to allow the flow of raw material gas, and the heating region H3 may be combined with a block section (not shown) to allow the flow of cleaning gas. For example, by adjusting the heating region H2 to the vaporization temperature (or sublimation temperature) A of the raw material gas and the heating region H3 to the vaporization temperature (or sublimation temperature) B of the cleaning gas, the heating region can be heated to a temperature higher than the vaporization temperature (or sublimation temperature) of the process gas flowing through each of the first valves 40 in the final valve installation section 75A.

Furthermore, in FIG. 5, the gap between the heating regions H where the connecting sheet is arranged is far from the heater HT and is a location where temperature control is difficult. Therefore, a block part (not shown) may be combined in the first valve 40 arranged along the connecting sheet arranged between the heating region H2 and the heating region H3 so that a gas that exists as a gas at room temperature, such as a reactive gas or an inert gas, flows. Since the fluid flowing in the first valve 40 arranged in the gap between the heating regions H is configured to be a fluid that does not need to be heated by the heater HT in the first valve 40, it is sufficient to control the first valve 40 group other than the first valve 40 arranged along the connecting sheet to be equal to or higher than the vaporization temperature (or sublimation temperature) of the processing gas. Therefore, it is expected that the temperature controllability of the processing gas flowing in the final valve installation part 75A can be improved. In addition, the first valve 40 may not be provided in the part along the connecting sheet arranged between the heating region H2 and the heating region H3 so that the fluid cannot flow. In this case as well, improved temperature controllability can be expected for the process gas flowing within the final valve installation section 75A.

Furthermore, in FIG. 5, the thermal conductivity of the connecting sheet arranged between heating region H1 and heating region H2 may be made different from the thermal conductivity of the connecting sheet arranged between heating region H2 and heating region H3. For example, the thermal conductivity may be made different depending on the positional relationship with the heater HT, or the thermal conductivity may be made different depending on the power supplied to the heater HT. This allows the fluid flowing through the first valve 40 provided in each heating region H to be controlled to a predetermined temperature or higher.

Example 2
11, the power ratio of each heating region H formed by heating each heater HT is set to be the same. For example, HT3:HT4 are heated with power of 1:1. The heating regions H of each heater HT are shown as H3 and H4, respectively, and the following description will be given on the assumption that the heating region H that can be appropriately heated by each heater HT corresponds to six first valves 40 arranged in the final valve installation section 75A.

As shown in FIG. 11(A), the area sandwiched between the two connecting sheets is outside the heating areas H3 and H4, so if the raw material is flowed as a processing gas through the first valve 40 located in this area, the temperature control will not work well, and there is a high possibility that re-solidification (or re-liquefaction) will occur. Therefore, this area is configured to flow any fluid that does not require temperature control (or temperature heating) (a constant temperature gaseous fluid), for example, a reactant gas or an inert gas as a processing gas.

In this way, the process gas is passed through each of the heating regions H3 and H4, and the first valve 40, which is located in the region sandwiched between the two connecting sheets, is configured to pass, for example, a reactant gas or an inert gas as the process gas. Since the heating regions H3 and H4 are separated, it is possible to use different gas types, such as supplying a raw material gas as the process gas to the heating region H3 and supplying a cleaning gas as the process gas to the heating region H4. In addition, it may be configured so that two types of raw material gas with different sublimation temperatures (vaporization temperatures) can be supplied even if they are the same raw material gas.

Also, as shown in FIG. 7, the first valve 40 may not be arranged in the area sandwiched between the two connecting sheets. This allows the fluid to flow through the heating area H3 and the heating area H4 without flowing through the area sandwiched between the two connecting sheets where the temperature is likely to become unstable, making it possible to control the temperature of the fluid flowing through the heating area H3 or the heating area H4. For example, the temperature of the fluid can be set to a predetermined temperature or higher, so that a processing gas obtained by sublimating a solid raw material or a processing gas obtained by vaporizing a liquid raw material can be supplied as a fluid. Even with this configuration, since the heating area H3 and the heating area H4 are separated, it is possible to use different types of processing gas flowing through the first valve 40 arranged in the heating area H3 and the first valve 40 arranged in the heating area H4. Also, it may be possible to supply two types of raw material gas with different sublimation temperatures (vaporization temperatures) even if they are the same raw material gas.

Other Embodiments
Although the embodiments of the present disclosure have been specifically described above, the present disclosure is not limited to the above-described embodiments and can be modified in various ways without departing from the spirit and scope of the present disclosure.

For example, the final valve installation section may be distributed and installed according to the gas type. Specifically, the final valve installation section may be distributed and installed for each gas that contributes to the processing of the substrate, such as the raw material gas, reaction gas, and modifying gas. Each may be controlled to a different temperature. On the other hand, if the vaporization temperature (sublimation temperature) is approximately the same regardless of the gas type, the gas that contributes to the processing of the substrate and the gas that does not contribute to the processing of the substrate may be supplied to the processing chamber via the same final valve installation section.

For example, a heat equalizing plate (heat equalizing section) is provided for each heating area, but a common heat equalizing plate (heat equalizing section) may be provided for the heating areas, and a slit may be made in the boundary between the heating areas to reduce the heat transfer area. In this case, however, there is an issue with the strength of the final valve installation area, and measures such as inserting a reinforcing material in the slit at the boundary may be necessary. The reinforcing material is preferably a heat insulating material.

In the above embodiment, an example is described in which N2 gas is used as the inert gas, but this is not limiting, and rare gases such as Ar gas, He gas, Ne gas, and Xe gas can be used, and one or more of these rare gases can be used. However, in this case, a rare gas source needs to be prepared.

As the nitrogen-containing gas, one or more of nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, ammonia (NH3) gas, etc. can be used. As the oxygen-containing gas, one or more of oxygen (O2) gas, ozone (O3) gas, etc. can be used.

The reactant contained in the reaction gas is not limited to a nitrogen-containing gas or an oxygen-containing gas, and other types of thin films may be formed using gases that react with the source to perform film processing. Furthermore, film formation may be performed using three or more types of reaction gases.

In addition, for example, in each of the above-described embodiments, a film formation process in a semiconductor device is given as an example of a process performed by the substrate processing apparatus, but the present disclosure is not limited to this. That is, in addition to a film formation process, the process may be a process for forming an oxide film or a nitride film, or a process for forming a film containing a metal. Furthermore, the specific content of the substrate processing is not important, and the present invention can be suitably applied not only to a film formation process, but also to other substrate processing such as an annealing process, an oxidation process, a nitriding process, a diffusion process, and a lithography process.

Furthermore, the present disclosure can be suitably applied to other substrate processing apparatuses, such as annealing processing apparatuses, oxidation processing apparatuses, nitriding processing apparatuses, exposure apparatuses, coating apparatuses, drying apparatuses, heating apparatuses, and processing apparatuses that utilize plasma. The present disclosure may also be used in combination with these apparatuses.

In addition, although the present embodiment describes a semiconductor manufacturing process, the present disclosure is not limited thereto. For example, the present disclosure can also be applied to substrate processing such as a liquid crystal device manufacturing process, a solar cell manufacturing process, a light emitting device manufacturing process, a glass substrate processing process, a ceramic substrate processing process, and a conductive substrate processing process.

It is also possible to replace part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. It is also possible to add, delete, or replace part of the configuration of each embodiment with another configuration.

75 Final valve installation section 100 Control section (controller)

Claims (20)

a first valve that opens and closes a flow path for supplying a fluid contributing to substrate processing to a processing chamber; a plurality of heating regions that heat the first valves; a uniform temperature section provided in the plurality of heating regions; and a member that is provided between the heating regions and adjusts heat conduction between the uniform temperature sections;
The first valve is provided in a gas supply system at a position closest to the processing chamber among valves provided in a pipe communicating with the processing chamber. a first valve that opens and closes a flow path for supplying a fluid contributing to substrate processing to a processing chamber; a plurality of heating regions that heat the first valves; a uniform temperature section provided in the plurality of heating regions; and a member that is provided between the heating regions and adjusts heat conduction between the uniform temperature sections;
The member is configured to have different thermal conductivity above and below the soaking portion. The gas supply system according to claim 1, wherein the soaking section is provided for each heating area. The gas supply system of claim 1, wherein the first valve is provided near the processing chamber. The gas supply system according to claim 1 further comprises a plurality of heating means for heating the plurality of first valves, and the heating region is formed for each of the heating means. The gas supply system according to claim 5, wherein the heating means is configured to be capable of heating the heating regions individually. 6. The gas supply system according to claim 5 , wherein the heating means is configured to be capable of heating each of the heating regions to a preset temperature. a first valve that opens and closes a flow path for supplying a fluid contributing to substrate processing to a processing chamber; a heating means that heats the first valves; a plurality of heating regions that heat the first valves; a uniform heat section provided in the plurality of heating regions; and a member that is provided between the heating regions and adjusts heat conduction between the uniform heat sections;
The heating means is a gas supply system configured to be capable of heating to a temperature that is set according to the type of gas flowing through a flow path provided in the heating region. The gas supply system of claim 8, configured so that different temperatures are set depending on the type of gas flowing through the flow path provided in the heating region. The gas supply system according to claim 1, wherein the fluid that contributes to the processing of the substrate includes any one of a raw material gas, a reaction gas, and a modifying gas, or a mixed gas of a combination of the processing gases, or a mixed gas of the processing gas and an inert gas. Further, a block portion is provided in which a flow path through which the fluid flows,
The gas supply system according to claim 1 , wherein the uniform temperature section is provided below the block section. Further, a main body is provided in which a valve portion that opens and closes a flow path through which the fluid flows,
The gas supply system according to claim 11 , wherein a flow passage is provided in the main body portion, the flow passage communicating with the valve portion and the flow passage provided in the block portion. A gas supply system further comprising a first valve for opening and closing a flow path for supplying a fluid that contributes to the processing of a substrate to a processing chamber, a plurality of heating regions for heating the plurality of first valves, a soaking section provided in the plurality of heating regions, a member provided between the heating regions for adjusting the heat conduction between the soaking sections, and a second valve group for supplying a fluid that does not contribute to the processing of a substrate. The gas supply system of claim 13, wherein the fluid that does not contribute to the processing of the substrate is an inert gas. a first valve that opens and closes a flow path for supplying a fluid contributing to substrate processing to a processing chamber; a plurality of heating regions that heat the first valves; a uniform temperature section provided in the plurality of heating regions; and a member that is provided between the heating regions and adjusts heat conduction between the uniform temperature sections;
The first valve is provided in a pipe communicating with the processing chamber, and is disposed at a position closest to the processing chamber. A method for manufacturing a semiconductor device, comprising: a first valve that opens and closes a flow path that supplies a fluid that contributes to the processing of a substrate to a processing chamber; a plurality of heating regions that heat the first valves; a uniform temperature section provided in the plurality of heating regions; and a member provided between the heating regions that adjusts the heat conduction between the uniform temperature sections, the first valve being provided in a gas supply system that is closest to the processing chamber among valves provided in a pipe that communicates with the processing chamber and that supplies the fluid to the substrate. a first valve for opening and closing a flow path for supplying a fluid contributing to the processing of a substrate to a processing chamber; a heating means for heating the first valves; a plurality of heating regions formed for each of the heating means; a uniform temperature section provided in the plurality of heating regions; and a member provided between the heating regions for adjusting the heat conduction between the uniform temperature section;
The heating means is a substrate processing apparatus including a gas supply system configured to be able to heat the substrate to a temperature that is set according to the type of gas flowing through a flow path provided in the heating region. a first valve for opening and closing a flow path for supplying a fluid contributing to the processing of a substrate to a processing chamber; a heating means for heating the first valves; a plurality of heating regions formed for each of the heating means; a uniform temperature section provided in the plurality of heating regions; and a member provided between the heating regions for adjusting the heat conduction between the uniform temperature section;
A method for manufacturing a semiconductor device, comprising the step of: supplying the fluid to the substrate from a gas supply system configured to heat the substrate to a temperature that is set according to the type of gas flowing through a flow path provided in the heating region. A substrate processing apparatus including a gas supply system having a first valve for opening and closing a flow path for supplying a fluid that contributes to the processing of a substrate to a processing chamber, a plurality of heating regions for heating the plurality of first valves, a soaking section provided in the plurality of heating regions, a member provided between the heating regions for adjusting the heat conduction between the soaking sections, and a second valve group for supplying a fluid that does not contribute to the processing of a substrate. A method for manufacturing a semiconductor device, comprising the steps of: supplying a fluid to a substrate from a gas supply system that further includes a first valve that opens and closes a flow path that supplies a fluid that contributes to the processing of the substrate to a processing chamber; a plurality of heating regions that heat the first valves; a uniform temperature section provided in the plurality of heating regions; a member provided between the heating regions that adjusts the heat conduction between the uniform temperature sections; and a second valve group for supplying a fluid that does not contribute to the processing of the substrate.

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