JP5930625B2 - Die bond film, dicing die bond film, and semiconductor device - Google Patents

Description

  The present invention relates to a die bond film used when, for example, a semiconductor element such as a semiconductor chip is bonded and fixed onto an adherend such as a substrate or a lead frame. The present invention also relates to a dicing die bond film in which the die bond film and the dicing film are laminated. The present invention also relates to a semiconductor device manufactured using the die bond film or the dicing die bond film.

  Conventionally, silver paste is used for fixing a semiconductor chip to a lead frame or an electrode member in a manufacturing process of a semiconductor device. The fixing process is performed by applying a paste adhesive on a die pad or the like of the lead frame, mounting a semiconductor chip on the lead adhesive, and curing the paste adhesive layer.

  However, paste adhesives have large variations in coating amount, coating shape, etc. due to their viscosity behavior and deterioration. As a result, the thickness of the paste-like adhesive formed is not uniform, and the reliability of the fixing strength related to the semiconductor chip is poor. That is, when the application amount of the paste adhesive is insufficient, the bonding strength between the semiconductor chip and the electrode member is lowered, and the semiconductor chip is peeled off in the subsequent wire bonding process. On the other hand, when the application amount of the paste adhesive is too large, the paste adhesive is cast onto the semiconductor chip, resulting in poor characteristics, and the yield and reliability are lowered. Such a problem in the adhering process becomes particularly remarkable as the semiconductor chip becomes larger. Therefore, it is necessary to frequently control the amount of paste adhesive applied, which hinders workability and productivity.

  In this paste adhesive application step, there is a method in which the paste adhesive is separately applied to a lead frame or a formed chip. However, in this method, it is difficult to make the paste adhesive layer uniform, and a special apparatus and a long time are required for applying the paste adhesive. For this reason, a dicing film has been proposed in which a semiconductor wafer is bonded and held in a dicing process, and an adhesive layer for chip fixation necessary for a mounting process is also provided (see, for example, Patent Document 1).

  This dicing film has an adhesive layer that can be peeled off on a support substrate. After dicing the semiconductor wafer under the holding of the adhesive layer, the support substrate is stretched to bond the formed chip. They are peeled off together with the agent layer, collected individually, and fixed to an adherend such as a lead frame through the adhesive layer. At this time, a void usually exists between the adhesive layer and the adherend. Conventionally, this void has disappeared due to heat and pressure in a sealing process with a sealing resin.

  On the other hand, in recent years, a semiconductor device in which a plurality of semiconductor chips are stacked in multiple stages has been manufactured, and the time spent for the wire bonding process for wire bonding to the semiconductor chip and the process for thermosetting the die bond film has been prolonged. Tend to. And when it exposes to high temperature for a long time, it exists in the tendency for the bubble (void) in the boundary of a die-bonding film and a to-be-adhered body to lose | disappear in a sealing process. This void causes a problem that the semiconductor chip is peeled off from the adherend and lacks in adhesion reliability.

JP-A-60-57642

  The present invention has been made in view of the above problems, and its object is to reduce the generation of voids at the boundary between the die bond film and the adherend even when the treatment is performed at a high temperature for a long time. Another object of the present invention is to provide a die bond film, a dicing die bond film, and a semiconductor device manufactured using the die bond film or the dicing die bond film, which can suppress peeling in the reflow process.

  In order to solve the conventional problems, the inventors of the present application have studied a die bond film and a dicing die bond film in which the die bond film and the dicing film are laminated. As a result, when the die bond film is processed at a high temperature, the thermosetting resin component contained in the die bond film reacts abruptly, and bubbles (voids) disappear at the boundary between the die bond film and the adherend in the sealing process. I found it not. And the following structure was employ | adopted and it discovered that a void could be lose | disappeared at a sealing process by suppressing reaction of the thermosetting resin component contained in a die-bonding film, and came to complete this invention.

  That is, the die-bonding film according to the present invention contains a nitrile group-containing thermosetting acrylic copolymer and a curing agent, and uses a differential calorimeter at a heating rate of 10 ° C./min from 25 ° C. to 300 ° C. The calorific value when measured is 10 mJ / mg or less.

  According to the said structure, the calorific value when it measures at a temperature increase rate of 10 degree-C / min from 25 degreeC to 300 degreeC using a differential calorimeter is 10 mJ / mg or less, The said thermosetting resin component and the said Reaction with the curing agent is suppressed. Therefore, generation of voids at the boundary between the die bond film and the adherend can be suppressed. As a result, generation of voids at the boundary between the die bond film and the adherend can be reduced even when the treatment is performed at a high temperature for a long time. Moreover, according to the said structure, since it contains a nitrile group, cohesion force improves. As a result, peeling in the reflow process can be suppressed. That is, according to the said structure, coexistence with void suppression and peeling suppression in a reflow process is attained.

  In the above-mentioned constitution, the 5% by weight reduction temperature is 280 ° C. or more based on the heat cured at 175 ° C. for 5 hours, and the water absorption after the heat cured at 175 ° C. for 5 hours is 1%. % Or less is preferable. By setting the 5 wt% reduction temperature of the weight as 280 ° C or more based on the heat curing at 175 ° C for 5 hours, and the water absorption after the thermosetting at 175 ° C for 5 hours to 1 wt% or less. In the reflow process, it is possible to prevent peeling starting from the void. Note that the 5% by weight reduction temperature is when the die bond film after being thermally cured at 175 ° C. for 5 hours is heated at a predetermined rate of temperature increase (for example, 10 ° C./min) and the weight of the die bond film is reduced by 5%. (Thermogravimetric method: TGA method). In addition, the reflow process is a process that passes when the semiconductor package is assembled and then mounted on a printed wiring board or the like using solder, and is usually a process of heating to about 260 ° C.

  In the said structure, it is preferable that the tensile storage elastic modulus in 260 degreeC after thermosetting at 175 degreeC for 5 hours is 0.5 Mpa or more. When the tensile storage modulus at 260 ° C. after thermosetting at 175 ° C. for 5 hours is 0.5 MPa or more, it is possible to further prevent peeling from the voids in the reflow process.

  In the above configuration, the weight ratio (x / y) is preferably 2 or more and 20 or less, where x is the weight of the nitrile group-containing thermosetting acrylic copolymer and y is the weight of the curing agent. When the weight ratio (x / y) is 2 or more, the calorific value is easily set to 10 mJ / mg or less. On the other hand, when the weight ratio (x / y) is 20 or less, it is easy to impart a cohesive force that resists peeling during the reflow process.

  The said structure WHEREIN: It is preferable that the weight average molecular weight of the said nitrile group containing thermosetting acrylic copolymer is 500,000 or more. When the weight average molecular weight of the nitrile group-containing thermosetting acrylic copolymer is 500,000 or more, a cohesive force that resists peeling is more easily imparted during the reflow process.

  The said structure WHEREIN: It is preferable that the said nitrile group containing thermosetting acrylic copolymer contains an epoxy group, and an epoxy value is 0.1 eq / Kg or more and 1 eq / Kg or less. When the epoxy value is 0.1 eq / Kg or more, a sufficient elastic modulus at a high temperature can be obtained even after thermosetting. On the other hand, reaction with a hardening | curing agent can be suppressed more as the said epoxy value is 1 eq / Kg or less.

  The said structure WHEREIN: It is preferable that the said hardening | curing agent has a phenolic hydroxyl group. When the curing agent has a phenolic hydroxyl group, the cohesive force can be further improved by reaction with the epoxy group.

Further, the dicing die-bonding film according to the present invention, in order to solve the above problems, the dialog-bonding film according to, characterized in that it is laminated on the dicing film.

  The said structure WHEREIN: It is preferable that the tensile storage elastic modulus in 25 degreeC before thermosetting of the said die-bonding film is 1 Mpa or more and 5 GPa or less. When the tensile storage elastic modulus at 25 ° C. before thermosetting of the die bond film is 1 MPa or more, the peeling force from the dicing film is appropriate, and the pick-up property can be improved. On the other hand, if the tensile storage modulus at 25 ° C. before thermosetting of the die bond film is 5 GPa or less, the handling property is excellent.

  In order to solve the above-mentioned problems, a semiconductor device according to the present invention is manufactured using the above-described die bond film or dicing die bond film.

It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram which shows the example which mounted the semiconductor chip through the adhesive bond layer in the dicing die-bonding film shown in FIG. It is a cross-sectional schematic diagram which shows the example which mounted the semiconductor chip three-dimensionally through the adhesive bond layer in the dicing die-bonding film shown in FIG. It is a cross-sectional schematic diagram which shows the example which mounted two-dimensionally the two semiconductor chips with the adhesive bond layer via the spacer using the dicing die-bonding film shown in FIG. It is a figure which shows the typical differential calorific value curve obtained by differential scanning calorimetry.

(Dicing die bond film)
A dicing die-bonding film according to an embodiment of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing a dicing die-bonding film according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing another dicing die-bonding film according to another embodiment of the present invention.

  As shown in FIG. 1, the dicing die bond film 10 has a configuration in which a die bond film 3 is laminated on a dicing film 11. The dicing film 11 is configured by laminating the pressure-sensitive adhesive layer 2 on the base material 1, and the die-bonding film 3 is provided on the pressure-sensitive adhesive layer 2. Moreover, the structure which formed the die bond film 3 'only in the workpiece | work affixing part 2a of the adhesive layer 2 like the dicing die bond film 12 shown in FIG.

  The die bond films 3 and 3 ′ are composed of only a single adhesive layer and contain a nitrile group-containing thermosetting acrylic copolymer and a curing agent. In this embodiment, the case where the die bond films 3 and 3 ′ are composed of only a single layer of the adhesive layer will be described. However, in the present invention, the laminated structure of the die bond films 3 and 3 ′ is not particularly limited. The thing of the multilayered structure etc. which formed the adhesive bond layer in the single side | surface or both surfaces of a core material may be sufficient. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.

  The die bond films 3 and 3 ′ have a calorific value of 10 mJ / mg or less when measured using a differential calorimeter at a heating rate of 10 ° C./min from 25 ° C. to 300 ° C. The calorific value is preferably 8 mJ / mg or less, and more preferably 5 mJ / mg or less. Moreover, although the said emitted-heat amount is so preferable that it is small, it is 0.001 mJ / mg or more, for example. Since the calorific value is 10 mJ / mg or less, generation of voids at the boundary between the die bond films 3, 3 ′ and the adherend 6 (see FIG. 3) can be suppressed. As a result, it is possible to reduce the occurrence of voids at the boundary between the die bond films 3 and 3 ′ and the adherend even when the treatment is performed at a high temperature for a long time. Examples of the method for controlling the calorific value to 10 mJ / mg or less include reacting a thermosetting acrylic copolymer with a curing agent, and substantially not using a curing accelerator.

The die bond films 3, 3 ′ have a 5% by weight reduction temperature of 280 ° C. or more, more preferably 290 ° C. or more, based on the thermosetting at 175 ° C. for 5 hours, 300 More preferably, the temperature is higher than or equal to ° C. Although the said weight% decreasing temperature is so preferable that it is high, it is 450 degrees C or less, for example.
Further, the die-bonding films 3, 3 ′ have a water absorption rate of preferably 1% by weight or less, more preferably 0.9% by weight or less, after thermosetting at 175 ° C. for 5 hours. More preferably, it is not more than% by weight. The water absorption is preferably as small as possible, but is, for example, 0.05% by weight or more. The water absorption is obtained by the method described in the examples.
The die bond films 3 and 3 ′ have a 5% by weight reduction temperature of 280 ° C. or more based on the thermosetting at 175 ° C. for 5 hours, and the water absorption after the thermosetting at 175 ° C. for 5 hours. By setting the content to 1% by weight or less, it is possible to prevent peeling starting from the void in the reflow process.

  The die bond films 3, 3 ′ preferably have a tensile storage elastic modulus at 260 ° C. after being thermally cured at 175 ° C. for 5 hours, of 0.5 MPa or more, and more preferably from 0.55 MPa to 3000 MPa. More preferably, it is 0.6 MPa or more and 2000 MPa or less. When the tensile storage modulus at 260 ° C. after thermosetting at 175 ° C. for 5 hours is 0.5 MPa or more, it is possible to further prevent peeling from the voids in the reflow process.

  The die bond films 3 and 3 ′ have a weight ratio (x / y) of 2 or more and 20 or less, where x is the weight of the nitrile group-containing thermosetting acrylic copolymer and y is the weight of the curing agent. Is preferably 2.3 or more and 15.6 or less, more preferably 3 or more and 11.5 or less. When the weight ratio (x / y) is 2 or more, the calorific value is easily set to 10 mJ / mg or less. On the other hand, when the weight ratio (x / y) is 20 or less, it is easy to impart a cohesive force that resists peeling during the reflow process.

  The nitrile group-containing thermosetting acrylic copolymer preferably has a weight average molecular weight of 500,000 or more, more preferably 800,000 to 2,000,000. When the weight average molecular weight of the nitrile group-containing thermosetting acrylic copolymer is 500,000 or more, a cohesive force that resists peeling is more easily imparted during the reflow process.

  The nitrile group-containing thermosetting acrylic copolymer contains an epoxy group, and preferably has an epoxy value of 0.1 eq / Kg to 1 eq / Kg, preferably 0.15 eq / Kg to 0.8 eq / It is more preferably Kg or less, and further preferably 0.2 eq / Kg or more and 0.6 eq / Kg or less. When the epoxy value is 0.1 eq / Kg or more, a sufficient elastic modulus at a high temperature can be obtained even after thermosetting. On the other hand, reaction with a hardening | curing agent can be suppressed more as the said epoxy value is 1 eq / Kg or less.

  Further, the glass transition point (Tg) of the nitrile group-containing thermosetting acrylic copolymer is as long as appropriate adhesiveness is obtained between the die bond films 3, 3 ′ and the adherend (for example, wafer). Although not particularly limited, it is preferably −15 ° C. or higher and 40 ° C. or lower, and more preferably −10 ° C. or higher and 35 ° C. or lower. It is because the adhesiveness to a semiconductor wafer can be made sufficient by setting it as -15 degreeC or more. Moreover, it is because a handleability can be improved by making it 40 degrees C or less, suppressing a tack. The glass transition point can be obtained by the method described in the examples.

  The nitrile group-containing thermosetting acrylic polymer is not particularly limited, and includes a nitrile group and one or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group. What added the monomer which has a thermosetting functional group to the polymer (copolymer) used as a component is mentioned.

  Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  Although it does not specifically limit as a manufacturing method of the said nitrile group containing thermosetting acrylic polymer, For example, the method of copolymerizing the monomer which has a nitrile group containing monomer, an acryl-type monomer, and a thermosetting functional group is mentioned. Moreover, the method of adding the monomer which has a thermosetting functional group to what copolymerized the nitrile group containing monomer and the acryl-type monomer is also mentioned. As another method, a compound having a functional group capable of reacting with the first functional group and a compound having a nitrile group after the acrylic monomer and the monomer having the first functional group are copolymerized with a nitrile group. A method in which a monomer having a thermosetting functional group is added after the condensation or addition reaction while maintaining it is mentioned.

The nitrile group-containing thermosetting acrylic polymer includes a nitrile group, a thermosetting functional group, and one or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group. It may be a polymer (copolymer) as a component. In this case, the method for producing the nitrile group-containing thermosetting acrylic polymer is not particularly limited. For example, a nitrile group-containing monomer, a monomer having a thermosetting functional group, and an acrylic monomer are copolymerized. The method of doing is mentioned.
As a method for producing the nitrile group-containing thermosetting acrylic polymer,
(A) After copolymerizing a monomer having a thermosetting functional group, an acrylic monomer, and a monomer having a first functional group, it has a functional group capable of reacting with the first functional group and a nitrile group. A method of subjecting a compound to a condensation or addition reaction while maintaining a nitrile group,
(B) having a functional group capable of reacting with the second functional group and a thermosetting functional group after copolymerizing a nitrile group-containing monomer, an acrylic monomer, and a monomer having a second functional group A method of subjecting a compound to a condensation or addition reaction while maintaining a thermosetting functional group;
(C) a functional group capable of reacting with the second functional group and thermosetting after (co) polymerizing the acrylic monomer, the monomer having the second functional group, and the monomer having the first functional group The compound having a functional group is condensed or added while maintaining the thermosetting functional group, and the compound having the functional group capable of reacting with the first functional group and the nitrile group is maintained with the nitrile group. A method in which condensation or addition reaction is performed as it is may be mentioned.

  Examples of the nitrile group-containing monomer include (meth) acrylonitrile, cyanostyrene, and the like.

  As the monomer having a thermosetting functional group, for example, a monomer having a glycidyl group and having a copolymerizable ethylenically unsaturated bond can be preferably used. For example, glycidyl acrylate, glycidyl methacrylate And glycidyl group-containing monomers such as Moreover, maleimide acrylate is mentioned as another example of the monomer which has the said thermosetting functional group.

  The mixing ratio of the monomers constituting the nitrile group-containing thermosetting acrylic polymer is preferably adjusted in consideration of the glass transition temperature and the epoxy value. In particular, the content of the monomer having the thermosetting functional group in the nitrile group-containing thermosetting acrylic polymer is preferably 1 to 20 mol% from the viewpoint of glass transition temperature and epoxy value, and preferably 1 to 15 mol. % Is more preferable, and 1 to 10 mol% is more preferable. The polymerization method of the nitrile group-containing thermosetting acrylic polymer is not particularly limited, and conventionally known methods such as a solution polymerization method, a bulk polymerization method, a suspension polymerization method, and an emulsion polymerization method can be employed.

  The other monomer that forms the nitrile group-containing thermosetting acrylic polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, and fumar. Carboxyl group-containing monomers such as acid or crotonic acid, acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, ( 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or ( 4-hydroxymethyl Hydroxyl group-containing monomers such as cyclohexyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate Alternatively, a sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid, a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate, or a styrene monomer can be used.

(Curing agent)
The curing agent is not limited as long as it acts as a curing agent for the nitrile group-containing thermosetting acrylic polymer, and in particular, when reacted with an epoxy group or a glycidyl group, a carboxyl group, a phenolic hydroxyl group, an amino group. It is preferable to contain an acid anhydride, and among them, a phenolic hydroxyl group is preferable. For example, phenol novolac resin, phenol biphenyl resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolak resin, novolak type phenol resin such as nonylphenol novolak resin, phenol resin such as resol type phenol resin, polyoxy such as polyparaoxystyrene Examples include styrene and the like, bifunctional or more low molecular weight materials such as alizarin and salicylic acid, and benzoxazine in which a phenolic hydroxyl group appears by heat. These can be used alone or in combination of two or more.

  Although the weight average molecular weight of the said hardening | curing agent is not specifically limited, It is preferable to exist in the range of 100-3000, and it is more preferable to exist in the range of 150-2000. When the weight average molecular weight is 100 or more, volatilization during curing is suppressed and generation of voids is suppressed. On the other hand, when the weight average molecular weight is 3000 or less, it is possible to prevent the viscosity from becoming high and to improve the workability at the time of producing the die bond film.

  Moreover, a filler can be suitably mix | blended with die-bonding film 3, 3 'according to the use. The blending of the filler enables imparting conductivity, improving thermal conductivity, adjusting the elastic modulus, and the like. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are preferable from the viewpoints of characteristics such as improvement in handleability, improvement in thermal conductivity, adjustment of melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , Boron nitride, crystalline silica, amorphous silica and the like. These can be used alone or in combination of two or more. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. Further, from the viewpoint that the above properties are well balanced, crystalline silica or amorphous silica is preferable. In addition, a conductive substance (conductive filler) may be used as the inorganic filler for the purpose of imparting conductivity and improving thermal conductivity. Examples of the conductive filler include metal powder in which silver, aluminum, gold, cylinder, nickel, conductive alloy and the like are made into a spherical shape, needle shape and flake shape, metal oxide such as alumina, amorphous carbon black, graphite and the like.

The average particle size of the filler is preferably 0.005 to 10 μm, and more preferably 0.001 to 1 μm. This is because when the average particle size of the filler is 0.005 μm or more, the wettability to the adherend and the adhesiveness can be improved. Moreover, by setting it as 10 micrometers or less, while being able to make the effect of the filler added for provision of said each characteristic sufficient, heat resistance can be ensured. In addition, the average particle diameter of a filler is the value calculated | required, for example with the photometric type particle size distribution analyzer (The product made from HORIBA, apparatus name; LA-910).

  The filler content is preferably 0-60 wt% and more preferably 0-50 wt% with respect to the entire die bond film composition (resin solid content constituting the die bond film).

  In addition to the said filler, other additives can be suitably mix | blended with the die-bonding films 3 and 3 'as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The thickness of the die bond films 3 and 3 ′ (total thickness in the case of a laminate) is not particularly limited, but can be selected from the range of 5 to 100 μm, and preferably 5 to 50 μm.

  The die bond films 3, 3 'of the dicing die bond films 10, 12 are preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond films 3 and 3 ′ until they are put into practical use. Further, the separator can be used as a support base material when transferring the die bond films 3 and 3 ′ to the pressure-sensitive adhesive layer 2. The separator is peeled off when a workpiece is stuck on the die bond film 3, 3 'of the dicing die bond film. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

  The substrate 1 has ultraviolet transparency and serves as a strength matrix for the dicing die bond films 10 and 12. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like.

  Moreover, as a material of the base material 1, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area between the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′ is reduced by thermally shrinking the base material 1 after dicing, so that the semiconductor chip The collection of the (semiconductor element) can be facilitated.

  The surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed. The base material 1 can be used by appropriately selecting the same kind or different kinds, and a blend of several kinds can be used as necessary.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 2, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization, if necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifier and anti-aging agent, other than the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 2 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can increase the degree of cross-linking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and a portion 2a corresponding to the work pasting portion of the pressure-sensitive adhesive layer 2 shown in FIG. The difference in adhesive strength with the other part 2b can be provided by irradiating only with radiation.

  Further, by curing the radiation curable pressure-sensitive adhesive layer 2 in accordance with the die bond film 3 ′ shown in FIG. 2, the portion 2 a having a significantly reduced adhesive force can be easily formed. Since the die bond film 3 ′ is attached to the portion 2 a that has been cured and has reduced adhesive strength, the interface between the portion 2 a and the die bond film 3 ′ of the pressure-sensitive adhesive layer 2 has a property of being easily peeled off during pick-up. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force, and forms the portion 2b.

  As described above, in the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 10 shown in FIG. 1, the portion 2b formed of the uncured radiation-curable pressure-sensitive adhesive sticks to the die-bonding film 3 and is used when dicing. A holding force can be secured. In this way, the radiation curable pressure-sensitive adhesive can support the die bond film 3 for fixing a chip-like work (semiconductor chip or the like) to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 11 shown in FIG. 2, the portion 2b can fix the wafer ring.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation curable pressure sensitive adhesive, for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components moving through the adhesive over time. It is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of radiation curable pressure-sensitive adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  The radiation curable pressure-sensitive adhesive layer 2 can contain a compound that is colored by irradiation with radiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 2 by irradiation with radiation, only the irradiated portion can be colored. That is, the portion 2a corresponding to the workpiece pasting portion 3a shown in FIG. 1 can be colored. Accordingly, whether or not the pressure-sensitive adhesive layer 2 has been irradiated with radiation can be immediately determined by visual observation, the workpiece pasting portion 3a can be easily recognized, and workpieces can be easily pasted together. Further, when detecting a semiconductor element by an optical sensor or the like, the detection accuracy is increased, and no malfunction occurs when the semiconductor element is picked up.

  A compound that is colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation, but becomes colored by radiation irradiation. Preferable specific examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane, fluoran, phenothiazine, auramine, and spiropyran dyes are preferably used. Specifically, 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethyl Examples include aminotriphenylmethanol, 4,4 ′, 4 ″ -trisdimethylaminotriphenylmethane, and the like.

  Developers preferably used together with these leuco dyes include conventionally used initial polymers of phenol formalin resins, aromatic carboxylic acid derivatives, electron acceptors such as activated clay, and further change the color tone. In some cases, various known color formers can be used in combination.

  Such a compound that is colored by irradiation with radiation may be once dissolved in an organic solvent or the like and then included in the radiation-curable adhesive, or may be finely powdered and included in the pressure-sensitive adhesive. The use ratio of this compound is 10% by weight or less, preferably 0.01 to 10% by weight, more preferably 0.5 to 5% by weight in the pressure-sensitive adhesive layer 2. When the proportion of the compound exceeds 10% by weight, the radiation applied to the pressure-sensitive adhesive layer 2 is excessively absorbed by the compound, so that the portion 2a of the pressure-sensitive adhesive layer 2 is not sufficiently cured, and is sufficiently sticky. Power may not decrease. On the other hand, in order to sufficiently color, it is preferable that the ratio of the compound is 0.01% by weight or more.

  When the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 2 so that the pressure-sensitive adhesive force of the part 2a in the pressure-sensitive adhesive layer 2 <the pressure-sensitive adhesive force of the other part 2b. May be irradiated.

  Examples of the method for forming the portion 2a on the pressure-sensitive adhesive layer 2 include a method in which after the radiation-curable pressure-sensitive adhesive layer 2 is formed on the support substrate 1, the portion 2a is partially irradiated with radiation to be cured. It is done. The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to the portion 3b other than the workpiece pasting portion 3a is formed. Moreover, the method etc. of irradiating and hardening | curing an ultraviolet-ray spotly are mentioned. The radiation curable pressure-sensitive adhesive layer 2 can be formed by transferring what is provided on the separator onto the support substrate 1. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 2 provided on the separator.

  In the case where the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, all or a part of at least one side of the support substrate 1 other than the part corresponding to the workpiece pasting part 3a is shielded from light. The portion 2a with reduced adhesive strength can be formed by irradiating with radiation after forming the radiation-curable pressure-sensitive adhesive layer 2 on the substrate and curing the portion corresponding to the workpiece pasting portion 3a. . As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the dicing die-bonding film 10 of the present invention can be manufactured efficiently.

  In the case where curing is inhibited by oxygen during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 2 by some method. For example, a method of coating the surface of the pressure-sensitive adhesive layer 2 with a separator, a method of irradiating ultraviolet rays or the like in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

The dicing die bond films 10 and 12 according to the present embodiment are produced as follows, for example.
First, the base material 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 1 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 2 is formed. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 2 may be formed. Then, the adhesive layer 2 is bonded together with the separator on the base material 1. Thereby, the dicing film 11 is produced.

The die bond films 3 and 3 ′ are produced, for example, as follows.
First, an adhesive composition solution which is a material for forming the dicing die bond films 3 and 3 ′ is prepared. As described above, the adhesive composition solution contains the adhesive composition, filler, and other various additives.

  Next, the adhesive composition solution is applied onto the base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form an adhesive layer. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating an adhesive composition solution on a separator and forming a coating film, you may dry an application film on the said drying conditions, and may form an adhesive bond layer. Then, an adhesive bond layer is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from each of the dicing film 11 and the adhesive layer, and the adhesive layer and the pressure-sensitive adhesive layer are bonded to each other so as to be a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Next, the base material separator on the adhesive layer is peeled off, and the dicing die-bonding film according to the present embodiment is obtained.

(Method for manufacturing semiconductor device)
The dicing die-bonding films 10 and 12 of the present invention are used as follows by appropriately separating the separator arbitrarily provided on the die-bonding films 3 and 3 ′. Hereinafter, a case where the dicing die-bonding film 10 is used will be described as an example with reference to FIG. FIG. 3 is a schematic cross-sectional view showing an example in which a semiconductor chip is mounted via an adhesive layer in the dicing die-bonding film shown in FIG.

  First, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 3a of the die bond film 3 in the dicing die bond film 10, and this is bonded and held (fixing step). This step is performed while pressing with a pressing means such as a pressure roll. The attaching temperature at the time of mounting is not specifically limited, For example, it is preferable to exist in the range of 20-80 degreeC.

  Next, dicing of the semiconductor wafer 4 is performed. Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing die bond film 10 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer is bonded and fixed by the dicing die-bonding film 10, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

  In order to peel off the semiconductor chip adhered and fixed to the dicing die bond film 10, the semiconductor chip 5 is picked up. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 5 from the dicing die bond film 10 side with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device may be mentioned.

  Here, when the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the die-bonding film 3 of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, the above-mentioned thing can be used as a light source used for ultraviolet irradiation.

  The picked-up semiconductor chip 5 is bonded and fixed to the adherend 6 via the die bond film 3 (die bond).

  The conditions for die bonding are not particularly limited, and can be set as appropriate. For example, the die bond temperature can be set to 80 to 160 ° C., the die bond pressure 5N to 15N, and the die bond time 1 to 10 seconds.

  Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

  A conventionally well-known thing can be used as said board | substrate. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by mounting a semiconductor element and electrically connecting the semiconductor element.

  Since the die-bonding film 3 is a thermosetting type, the semiconductor chip 5 is bonded and fixed to the adherend 6 by heat curing to improve the heat resistance strength. The heating temperature can be 80 to 180 ° C, preferably 100 to 175 ° C, more preferably 100 to 150 ° C. The heating time can be 0.1 to 24 hours, preferably 0.1 to 3 hours, more preferably 0.1 to 1 hour.

  The shear bonding strength of the die-bonding film 3 after thermosetting is preferably 0.02 MPa or more, more preferably 0.03 to 10 MPa, with respect to the adherend 6. When the shear bond strength of the die bond film 3 is at least 0.02 MPa or more, the die bond film 3 and the semiconductor chip 5 or the adherend 6 are bonded by ultrasonic vibration or heating in the wire bonding process. Less shear deformation occurs on the adhesive surface. That is, the semiconductor element is less likely to move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.

  In addition, the manufacturing method of the semiconductor device which concerns on this invention performs wire bonding, without passing through the thermosetting process by heat processing of the die-bonding film 3, Furthermore, the semiconductor chip 5 is sealed with sealing resin, The said sealing resin May be aftercured. In this case, the shear adhesive force at the time of temporary fixing of the die bond film 3 is preferably 0.02 MPa or more, more preferably 0.03 to 10 MPa, with respect to the adherend 6. When the shear bonding force at the time of temporarily fixing the die bond film 3 is at least 0.02 MPa, even if the wire bonding step is performed without passing through the heating step, the die bond film is subjected to ultrasonic vibration or heating in the step. 3 is less likely to cause shear deformation at the bonding surface between the semiconductor chip 5 and the semiconductor chip 5 or the adherend 6. That is, the semiconductor element is less likely to move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.

  The wire bonding is a step of electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 with a bonding wire 7 (see FIG. 3). . As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range. This step may be performed without thermosetting the die bond film 3.

  The sealing step is a step of sealing the semiconductor chip 5 with the sealing resin 8 (see FIG. 3). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. Thereby, the sealing resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed through the die bond film 3. That is, in the present invention, even when the post-curing step described later is not performed, the die bonding film 3 can be fixed in this step, and the number of manufacturing steps can be reduced and the semiconductor device manufacturing period can be reduced. It can contribute to shortening.

  In the post-curing step, the sealing resin 8 that is insufficiently cured in the sealing step is completely cured. Even if the die bond film 3 is not completely thermoset in the sealing step, the die bond film 3 can be completely thermoset together with the sealing resin 8 in this step. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  Next, the semiconductor package is surface-mounted on a printed wiring board. As a surface mounting method, for example, reflow soldering (reflow process) in which solder is supplied on a printed wiring board in advance and then heated and melted with hot air or the like to perform soldering is exemplified. Examples of the heating method include hot air reflow and infrared reflow. Moreover, any system of whole heating or local heating may be used. The heating temperature is preferably 230 to 280 ° C., and the heating time is preferably in the range of 1 to 360 seconds.

  Further, as shown in FIG. 4, the dicing die-bonding film of the present invention can also be suitably used when a plurality of semiconductor chips are stacked and three-dimensionally mounted. 4 is a schematic cross-sectional view showing an example in which a semiconductor chip is three-dimensionally mounted via an adhesive layer in the dicing die-bonding film shown in FIG. In the case of the three-dimensional mounting shown in FIG. 4, first, at least one die bond film 3 cut out to be the same size as the semiconductor chip is die-bonded on the adherend 6, and then the semiconductor chip 5 is interposed via the die bond film 3. Die bonding is performed so that the wire bond surface is on the upper side. Next, the die bond film 13 is die bonded while avoiding the electrode pad portion of the semiconductor chip 5. Further, another semiconductor chip 15 is die-bonded on the die-bonding film 13 so that the wire-bonding surface is on the upper side.

  Next, thermosetting of the die bond films 3 and 13 is performed, and then a wire bonding process is performed. Thereby, each electrode pad in the semiconductor chip 5 and the other semiconductor chip 15 and the adherend 6 are electrically connected by the bonding wire 7.

  Subsequently, a sealing process for sealing the semiconductor chip 5 and the like with the sealing resin 8 is performed, and the sealing resin is cured. In addition, you may perform a postcure process after a sealing process.

  In the case of three-dimensional mounting of a semiconductor chip, the number of bonding wires 7 that connect the semiconductor chips 5 and 15 and the adherend 6 increases, so that the time spent in the wire bonding process tends to be long, It will be exposed to high temperature for a long time. However, according to the die bond films 3 and 13, it is possible to suppress the progress of the thermosetting reaction even when exposed to a high temperature for a long time.

  Moreover, as shown in FIG. 5, it is good also as three-dimensional mounting which laminated | stacked the spacer via the die-bonding film between the semiconductor chips. FIG. 5 is a schematic cross-sectional view showing an example in which two semiconductor chips are three-dimensionally mounted with an adhesive layer through a spacer using the dicing die-bonding film shown in FIG.

  In the case of the three-dimensional mounting shown in FIG. 5, first, the die bond film 3, the semiconductor chip 5, and the die bond film 21 are sequentially laminated on the adherend 6 and die bonded. Further, the spacer 9, the die bond film 21, the die bond film 3, and the semiconductor chip 5 are sequentially laminated on the die bond film 21 and die bonded.

  Next, thermosetting of the die bond films 3 and 21 is performed, and then a wire bonding process is performed as shown in FIG. Thereby, the electrode pad in the semiconductor chip 5 and the adherend 6 are electrically connected by the bonding wire 7.

  Then, the sealing process which seals the semiconductor chip 5 with the sealing resin 8 is performed, and the sealing resin is cured. Thereby, a semiconductor package is obtained. The sealing process is preferably a batch sealing method in which only the semiconductor chip 5 side is sealed on one side. Sealing is performed to protect the semiconductor chip 5 attached on the pressure-sensitive adhesive sheet, and the typical method is molding in a mold using the sealing resin 8. In that case, it is common to perform a sealing process simultaneously using the metal mold | die which consists of an upper metal mold | die and a lower metal mold | die which have a some cavity. The heating temperature at the time of resin sealing is preferably in the range of 170 to 180 ° C, for example. A post-curing step may be performed after the sealing step.

  The spacer 9 is not particularly limited, and for example, a conventionally known silicon chip or polyimide film can be used. A core material can be used as the spacer. It does not specifically limit as a core material, A conventionally well-known thing can be used. Specifically, a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a mirror silicon wafer, a silicon substrate or A glass substrate or the like can be used.

  Next, the semiconductor package is surface-mounted on a printed wiring board. Examples of the surface mounting method include reflow soldering in which solder is supplied on a printed wiring board in advance and then heated and melted with hot air or the like to perform soldering. Examples of the heating method include hot air reflow and infrared reflow. Moreover, any system of whole heating or local heating may be used. The heating temperature is preferably 230 to 280 ° C., and the heating time is preferably in the range of 1 to 360 seconds.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the gist of the present invention only to those unless otherwise limited. The term “parts” means parts by weight.

(Measurement of epoxy value)
The epoxy value of the nitrile group-containing thermosetting acrylic copolymer used in the examples and comparative examples was calculated according to JIS K 7236. Specifically, 4 g of a nitrile group-containing thermosetting acrylic copolymer was weighed into a 100 ml conical flask, and 10 ml of chloroform was added to dissolve it. Further, 30 ml of acetic acid, 5 ml of tetraethylammonium bromide and 5 drops of crystal violet indicator were added, and the mixture was titrated with a 0.1 mol / L perchloric acid acetic acid normal solution while stirring with a magnetic stirrer. A blank test was performed in the same manner, and the epoxy value was calculated by the following formula.
Epoxy value = [(V−B) × 0.1 × F] / W
W: Number of grams of weighed sample B: Number of ml of 0.1 mol / L perchloric acid acetic acid normal solution required for blank test V: ml of 0.1 mol / L perchloric acid acetic acid normal solution required for titration of sample Number F: Factor of 0.1 mol / L perchloric acid acetic acid normal solution

(Measurement of glass transition temperature (Tg))
The glass transition temperature of the nitrile group-containing thermosetting acrylic copolymer used in this example and comparative example was measured using a viscoelasticity measuring device (RSA-III, manufactured by Rheometic Scientific) at a heating rate of 10 ° C./min, frequency. It was measured from Tan (E ″ (loss elastic modulus) / E ′ (storage elastic modulus)) at 1 MHz.

(Measurement of weight average molecular weight of nitrile group-containing thermosetting acrylic copolymer)
The weight average molecular weights of the nitrile group-containing thermosetting acrylic copolymers used in the examples and comparative examples were measured by gel permeation chromatography. Gel permeation chromatography uses four columns of TSK G2000H HR, G3000H HR, G4000H HR, and GMH-H HR (all manufactured by Tosoh Corporation) in series, and tetrahydrofuran is used as the eluent. This was carried out under the conditions of a flow rate of 1 ml / min, a temperature of 40 ° C., a sample concentration of 0.1 wt% tetrahydrofuran solution, and a sample injection amount of 500 μl, and a differential refractometer was used as the detector.

Example 1
100 parts of a nitrile group-containing thermosetting acrylic copolymer (a-1) and 5.2 parts of a phenol resin (b-1) as a curing agent are dissolved in methyl ethyl ketone, and an adhesive having a concentration of 23.6% by weight. A composition solution was prepared. As the nitrile group-containing thermosetting acrylic copolymer (a-1) according to Example 1, an acrylic ester polymer (Negami) containing acrylonitrile-ethyl acrylate-butyl acrylate as a main component and 4.1 mol% of glycidyl acrylate is used. Kogyo Co., Ltd., ND series, suspension polymerized product, epoxy value 0.41, glass transition point (Tg) 12 ° C., weight average molecular weight 900,000) were used. The content of acrylonitrile in the nitrile group-containing thermosetting acrylic copolymer (a-1) is 28% by weight with respect to the total weight of the copolymer. Moreover, as a phenol resin (b-1) as a hardening | curing agent which concerns on Example 1, Meiwa Kasei Co., Ltd. product and "MEH7851" were used.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film A having a thickness of 25 μm was produced.

(Example 2)
100 parts of a nitrile group-containing thermosetting acrylic copolymer (a-2) and 10.3 parts of a phenol resin (b-2) as a curing agent are dissolved in methyl ethyl ketone, and an adhesive having a concentration of 23.6% by weight. A composition solution was prepared. As the nitrile group-containing thermosetting acrylic copolymer (a-2) according to Example 2, an acrylic ester polymer (Negami) containing acrylonitrile-ethyl acrylate-butyl acrylate as a main component and 4.1 mol% of glycidyl acrylate is used. Kogyo Co., Ltd., ND series, suspension polymerized product, epoxy value 0.41, glass transition point (Tg) 9 ° C., weight average molecular weight 1.05 million) were used. In addition, content of the acrylonitrile which occupies for a nitrile group containing thermosetting acrylic copolymer (a-2) is 24 weight% with respect to the whole weight of a copolymer. Moreover, as a phenol resin (b-2) as a hardening | curing agent based on Example 2, Meiwa Kasei Co., Ltd. product and "MEH7851" were used.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film B having a thickness of 25 μm was produced.

(Example 3)
100 parts of a nitrile group-containing thermosetting acrylic copolymer (a-3) and 48.5 parts of a phenol resin (b-3) as a curing agent are dissolved in methyl ethyl ketone, and an adhesive having a concentration of 23.6% by weight. A composition solution was prepared. The nitrile group-containing thermosetting acrylic copolymer (a-3) according to Example 3 is an acrylic acid ester polymer (Negami) containing acrylonitrile-ethyl acrylate-butyl acrylate as a main component and 4.1 mol% of glycidyl acrylate. Kogyo Co., Ltd., ND series, suspension polymerized product, epoxy value 0.41, glass transition point (Tg) 0 ° C., weight average molecular weight 1.1 million) were used. In addition, content of the acrylonitrile which occupies for a nitrile group containing thermosetting acrylic copolymer (a-3) is 20 weight% with respect to the whole weight of a copolymer. Moreover, as a phenol resin (b-3) as a hardening | curing agent based on Example 3, Meiwa Kasei Co., Ltd. product and "MEH7851" were used.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film C having a thickness of 25 μm was produced.

Example 4
100 parts of a nitrile group-containing thermosetting acrylic copolymer (a-4) and 10.3 parts of 1,2,4-trihydroxybenzene (b-4) as a curing agent are dissolved in methyl ethyl ketone, and further averaged 40 parts of spherical silica having a particle diameter of 500 nm (manufactured by Admatechs Co., Ltd., “SO-25R”) was dispersed to prepare an adhesive composition solution having a concentration of 23.6% by weight. As the nitrile group-containing thermosetting acrylic copolymer (a-4) according to Example 4, an acrylic ester polymer (Negami) containing acrylonitrile-ethyl acrylate-butyl acrylate as a main component and 2.4 mol% of glycidyl acrylate is used. Kogyo Co., Ltd., ND series, suspension polymerized product, epoxy value 0.23, glass transition point (Tg) 0 ° C., weight average molecular weight 1.05 million) were used. In addition, content of the acrylonitrile which occupies for a nitrile group containing thermosetting acrylic copolymer (a-4) is 20 weight% with respect to the whole weight of a copolymer. Moreover, as 1,2,4-trihydroxybenzene (b-4) as a hardening | curing agent which concerns on Example 4, the thing by Tokyo Chemical Industry Co., Ltd. was used.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film D having a thickness of 25 μm was produced.

(Comparative Example 1)
100 parts of thermosetting acrylic copolymer (a-5) and 5.2 parts of phenol resin (b-5) as a curing agent are dissolved in methyl ethyl ketone, and an adhesive composition solution having a concentration of 23.6% by weight. Was prepared. The nitrile group-containing thermosetting acrylic copolymer (a-5) according to Comparative Example 1 is an acrylic acid ester-based polymer (Negami Kogyo Co., Ltd.) containing ethyl acrylate-butyl acrylate as a main component and 4.1 mol% of glycidyl acrylate. ND series, suspension polymerized product, epoxy value 0.41, glass transition point (Tg) 12 ° C., weight average molecular weight 900,000). Moreover, as a phenol resin (b-5) as a hardening | curing agent which concerns on the comparative example 1, Meiwa Kasei Co., Ltd. product and "MEH7851" were used.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film E having a thickness of 25 μm was produced.

(Comparative Example 2)
100 parts of a nitrile group-containing thermosetting acrylic copolymer (a-6), 10.3 parts of a phenol resin (b-6) as a curing agent, and a curing catalyst (C11-Z, manufactured by Shikoku Kasei Co., Ltd.) 5 parts was dissolved in methyl ethyl ketone to prepare an adhesive composition solution having a concentration of 23.6% by weight. The nitrile group-containing thermosetting acrylic copolymer (a-6) according to Comparative Example 2 is an acrylic acid ester polymer (Negami) containing acrylonitrile-ethyl acrylate-butyl acrylate as a main component and 4.1 mol% of glycidyl acrylate. Kogyo Co., Ltd., ND series, suspension polymerized product, epoxy value 0.41, glass transition point (Tg) 9 ° C., weight average molecular weight 1.05 million) were used. The content of acrylonitrile in the nitrile group-containing thermosetting acrylic copolymer (a-6) is 24% by weight with respect to the total weight of the copolymer. Moreover, as a phenol resin (b-6) as a hardening | curing agent which concerns on the comparative example 2, Meiwa Kasei Co., Ltd. product and "MEH7851" were used.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film F having a thickness of 25 μm was produced.

(Calorific value measurement)
A differential scanning calorimeter (SII Nano Technology, DSC6220) was used for calorific value measurement. First, 10 mg of a sample (die bond films A to F) was put into an Al crimp pan, and the temperature was increased from 25 ° C. (room temperature) to 300 ° C. at a temperature increase rate of 10 ° C./min in a nitrogen atmosphere. A baseline was drawn on the DSC curve (exothermic peak) obtained during the temperature raising process, and the amount of heat was calculated from the area surrounded by the baseline and the DSC curve. FIG. 6 is a diagram showing a typical differential calorimetric curve obtained by differential scanning calorimetry. The amount of heat is calculated from the area of a region surrounded by the baseline B and the differential heat amount curve L shown in FIG.
Next, the calorific value was calculated from the following equation.
(Heat generation amount (mJ / mg)) = (Heat amount (mJ)) / (Weight of measurement sample (mg))
These operations and calculations were performed fully automatically. The results are shown in Table 1.

<Measurement of tensile storage modulus at 25 ° C. before thermosetting>
The die bond films A to F are cut into a strip shape having a length of 22.5 mm (measurement length) x a width of 10 mm with a cutter knife, and a solid viscoelasticity measuring device (RSA-III, manufactured by Rheometric Scientific Co., Ltd.) is used. Using, the tensile storage elastic modulus in -50-300 degreeC was measured. The measurement conditions were a frequency of 1 Hz and a heating rate of 10 ° C./min. Table 1 shows the values of the tensile storage elastic modulus at 50 ° C.

<Measurement of tensile storage modulus at 260 ° C. after thermosetting at 175 ° C. for 5 hours>
The die bond films A to F were thermally cured at 175 ° C. for 5 hours. Next, the heat-cured die bond films A to F were cut into a strip shape of length 22.5 mm (measured length) × width 10 mm with a cutter knife, and a solid viscoelasticity measuring device (RSA-III, rheometric science) Fic Co., Ltd.) was used to measure the tensile storage modulus at -50 to 300 ° C. The measurement conditions were a frequency of 1 Hz and a heating rate of 10 ° C./min. Table 1 shows the tensile storage modulus at 260 ° C.

<Measurement of 5% by weight reduction in weight based on heat curing at 175 ° C. for 5 hours>
About the die-bonding films AF after thermosetting at 175 degreeC for 5 hours, 5 weight% reduction | decrease temperature was measured with the thermogravimetric method. The results are shown in Table 1.

<Measurement of water absorption after thermosetting at 175 ° C. for 5 hours>
The water absorption after thermosetting at 175 ° C. for 5 hours for the die bond films A to F was measured from the weight loss rate before and after being left in a constant temperature and humidity chamber at 85 ° C. and 85% RH for 168 hours. The results are shown in Table 1.

<Bubble disappearance after sealing process (in the case of heat treatment at 120 ° C. for 10 hours)>
After the die-bonding films A to F obtained in each Example and Comparative Example were attached to a 5 mm square semiconductor element under the condition of 40 ° C., BGA (Ball (Ball) under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 s. grid array) mounted on a board. This was further heat-treated at 150 ° C. for 1 hour in a dryer, and then heat-treated at 120 ° C. for 10 hours. Next, using a molding machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the conditions of The interface between the die bond film and the BGA substrate after the sealing step was observed using an ultrasonic imaging apparatus (manufactured by Hitachi Finetech Co., Ltd., FS200II). The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). The case where the void occupied area was less than 30% with respect to the surface area of the die bond film was evaluated as “◯”, and the case where it was 30% or more was evaluated as “x”. The results are shown in Table 1.

<Bubble disappearance after sealing process (in the case of heat treatment at 175 ° C. for 1 hour)>
After the die-bonding films A to F obtained in each Example and Comparative Example were attached to a 5 mm square semiconductor element under the condition of 40 ° C., BGA (Ball (Ball) under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 s. grid array) mounted on a board. This was further heat-treated at 150 ° C. for 1 hour in a dryer, and then heat-treated at 175 ° C. for 1 hour. Next, using a molding machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the conditions of The interface between the die bond film and the BGA substrate after the sealing step was observed using an ultrasonic imaging apparatus (manufactured by Hitachi Finetech Co., Ltd., FS200II). The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). The case where the void occupied area was less than 30% with respect to the surface area of the die bond film was evaluated as “◯”, and the case where it was 30% or more was evaluated as “x”. The results are shown in Table 1.

(Moisture resistance reflow test (after heat treatment at 120 ° C. for 10 hours))
After bonding the die bond films A to F obtained in each example and comparative example to a 5 mm square semiconductor element under the condition of 40 ° C., the BGA substrate under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 second. Mounted on. This was further heat-treated at 150 ° C. for 1 hour in a dryer, and then heat-treated at 120 ° C. for 10 hours. Next, using a molding machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the conditions of Thereafter, a moisture absorption operation was performed under the conditions of a temperature of 85 ° C., a humidity of 60% RH, and a time of 168 h, and the sample was passed through an IR reflow furnace set to maintain a temperature of 260 ° C. or higher for 30 seconds. For nine semiconductor elements, whether or not peeling occurred at the interface between the die bond film and the substrate was observed with an ultrasonic microscope, and the ratio (%) at which peeling occurred. The results are shown in Table 1.

(Moisture resistance reflow test (after heat treatment at 175 ° C. for 1 hour))
After pasting the die bond films A to F obtained in each Example and Comparative Example to a 5 mm square semiconductor element under the condition of 40 ° C., the die bond films A to F were applied to the BGA substrate under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 s Mounted. This was further heat-treated at 150 ° C. for 1 hour in a dryer, and then heat-treated at 175 ° C. for 1 hour. Next, using a molding machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the conditions of Thereafter, a moisture absorption operation was performed under conditions of a temperature of 85 ° C., a humidity of 60% RH, and a time of 168 h, and the sample was passed through an IR reflow furnace set to a temperature of 260 ° C. or higher for 10 seconds. For nine semiconductor elements, whether or not peeling occurred at the interface between the die bond film and the substrate was observed with an ultrasonic microscope, and the ratio (%) at which peeling occurred. The results are shown in Table 1.

(result)
In the die-bonding films of Examples 1 to 4, even after a long-time heat treatment (120 ° C. for 10 hours or 175 ° C. for 1 hour) after die-bonding, the die-bonding film after the sealing process, which is a subsequent process. When the boundary between the substrate and the adherend was observed, there were few bubbles. Also, good results were shown in the moisture resistance test.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3, 3 'Die bond film (thermosetting type die bond film)
4 semiconductor wafer 5 semiconductor chip 6 adherend 7 bonding wire 8 sealing resin 10, 12 dicing die bond film 11 dicing film 13 die bond film (thermosetting die bond film)
15 Semiconductor Chip 21 Die Bond Film (Thermosetting Die Bond Film)

Claims (9)

Containing a nitrile group-containing thermosetting acrylic copolymer and a curing agent,
The nitrile group-containing thermosetting acrylic copolymer contains an epoxy group and has an epoxy value of 0.1 eq / Kg to 1 eq / Kg,
A die bond film characterized by having a calorific value of 10 mJ / mg or less when measured at 25 ° C. to 300 ° C. at a heating rate of 10 ° C./min using a differential calorimeter . However, if it contains organopolysiloxane structure-containing compound having a phenolic hydroxyl group or an epoxy group, and, excluding the case that contains the epoxy resin. 5 wt% reduction temperature of weight is 280 ° C or higher, based on the heat cured at 175 ° C for 5 hours,
The die-bonding film according to claim 1, wherein the water absorption after thermosetting at 175 ° C. for 5 hours is 1% by weight or less.   The die-bonding film according to claim 1 or 2, wherein a tensile storage elastic modulus at 260 ° C after thermosetting at 175 ° C for 5 hours is 0.5 MPa or more.   The weight ratio (x / y) is 2 or more and 20 or less, where x is the weight of the nitrile group-containing thermosetting acrylic copolymer and y is the weight of the curing agent. 4. The die bond film according to any one of 3.   The die bond film according to any one of claims 1 to 4, wherein the nitrile group-containing thermosetting acrylic copolymer has a weight average molecular weight of 500,000 or more.   The die-bonding film according to claim 1, wherein the curing agent has a phenolic hydroxyl group.   A dicing die bond film, wherein the die bond film according to any one of claims 1 to 6 is laminated on the dicing film.   The dicing die-bonding film according to claim 7, wherein the die-bonding film has a tensile storage elastic modulus at 25 ° C. before thermosetting of 1 MPa or more and 5 GPa or less. A semiconductor device comprising the die bond film according to claim 1.

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