JP5607847B1 - Adhesive tape for semiconductor processing - Google Patents

Abstract

The present invention provides a strong adhesiveness required for physical and mechanical peeling of a support member, and a cleaning liquid for cleaning an adhesive residue that has bonded the support member to a semiconductor wafer. Even when applied to the agent, the adhesive does not dissolve and contaminate the semiconductor element, and the laser beam necessary for stealth dicing is transmitted and laser light is incident on the semiconductor wafer to form a modified layer. And providing a semiconductor processing adhesive tape capable of separating a semiconductor wafer into semiconductor chips.
The pressure-sensitive adhesive tape for semiconductor processing of the present invention is a pressure-sensitive adhesive tape for semiconductor processing in which a radiation-curable pressure-sensitive adhesive layer is formed on at least one surface of a base resin film, and the radiation of the pressure-sensitive adhesive layer The contact angle with respect to methyl isobutyl ketone before irradiation is 25.1 ° to 60 °, and the parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side is 88% or more and less than 100%.
[Selection figure] None

Description

  The present invention relates to a semiconductor processing adhesive tape used for dicing a semiconductor wafer in a process of manufacturing a semiconductor device. More specifically, the present invention relates to an adhesive tape for semiconductor processing used for manufacturing a semiconductor element including a step of cleaning the surface of the semiconductor element using a chemical.

  In thin processing the back surface of the semiconductor wafer on which the wiring pattern is formed, in order to protect the pattern surface of the semiconductor wafer and fix the semiconductor wafer itself, after attaching a protective sheet on the pattern surface, polishing on the back surface, It is common to perform thin processing such as grinding. As such a protective sheet, a sheet obtained by applying an acrylic adhesive or the like on a base material made of a plastic film is generally used. However, in recent years, with the thinning and miniaturization of IC cards and mobile phones, the thickness of the semiconductor chip has been required to be 50 μm or less. In the process using the conventional protective sheet, the semiconductor wafer can be formed only with the protective sheet. The wafer cannot be supported, and the semiconductor wafer is warped after grinding, or is bent when stored in a wafer cassette, making it difficult to handle the semiconductor wafer and making handling and conveyance automated.

  In order to solve this problem, a method has been proposed in which a glass substrate, a ceramic substrate, a silicon wafer substrate, or the like is bonded to a semiconductor wafer via an adhesive to provide support to the semiconductor wafer (see, for example, Patent Document 1). . Thus, by using a support member such as a glass substrate, a ceramic substrate, or a silicon wafer substrate instead of the protective sheet, the handling property of the semiconductor wafer is greatly improved, and the conveyance can be automated.

  When the semiconductor wafer is handled using the support member, a process of peeling the support member from the semiconductor wafer is necessary after the backside grinding of the semiconductor wafer. The support member is peeled by (1) dissolving or decomposing the adhesive between the support member and the semiconductor wafer with chemicals, and (2) irradiating the adhesive between the support member and the semiconductor wafer with laser light. In general, it is carried out by a method such as photolysis. However, the method (1) requires a long time for diffusing chemicals in the adhesive, and the method (2) requires a long time for laser scanning. There was a problem. In addition, each method has a problem that it is necessary to prepare a special substrate as a support member.

  For this reason, when the support member is peeled off, a method of physically and mechanically peeling off after forming a peeling cut has been proposed (for example, see Patent Documents 2 and 3). This method eliminates the long-time treatment required for conventional dissolution or decomposition of adhesives with chemicals and photolysis by laser scanning, and enables processing in a short time. After the support member is peeled from the semiconductor wafer, the adhesive residue on the semiconductor wafer generated when the support member is peeled is then washed with a chemical.

  The semiconductor wafer whose back surface has been ground is then transferred to a dicing process and cut into individual chips. As described above, when the thickness of the semiconductor chip is 50 μm or less, the semiconductor wafer alone is the one after grinding. Since the semiconductor wafer becomes extremely difficult to handle due to warpage of the semiconductor wafer and bending when stored in the wafer cassette, the ground surface of the semiconductor wafer immediately before the back surface grinding of the semiconductor wafer prior to peeling of the support member. In general, a dicing tape is bonded to the ring frame and supported and fixed to the ring frame. Therefore, the cleaning of the adhesive residue on the semiconductor wafer caused by the peeling of the support member with the chemical is performed in a state where the semiconductor wafer is adhered to the dicing tape, and the dicing tape has high solvent resistance. Desired.

  As a dicing tape having high solvent resistance, it has been proposed that the pressure-sensitive adhesive layer contains an energy ray-curable acrylic resin composition and has a gel fraction of 70% or more (see, for example, Patent Document 4). .

  On the other hand, with the thinning of semiconductor chips, a phenomenon called chipping, in which minute chips are generated in the semiconductor chip due to cutting resistance in the dicing process, is increasingly regarded as a problem. Various methods for cutting a semiconductor wafer with a laser have been proposed as a method for solving this chipping. For example, a laser beam having transparency to the dicing tape is made incident on the back surface of the semiconductor wafer through the dicing tape by aligning the condensing point inside the semiconductor wafer with the dicing tape attached to the back surface. Stealth dicing that cuts a semiconductor wafer by forming a modified region by multiphoton absorption inside the semiconductor wafer along the planned cutting line of the wafer, and dividing the semiconductor wafer along the planned cutting line from the modified region Has been proposed (see, for example, Patent Document 5). According to this method, since the substrate can be cut with a relatively small force, it is possible to cut the semiconductor wafer without causing unnecessary cracks, i.e., chipping, deviating from the line to be cut on the surface of the substrate. Become.

  As a dicing tape used for such stealth dicing, a Young's modulus at 23 ° C. is 30 to 600 MPa, a parallel light transmittance at a wavelength of 1064 nm is 80% or more, and a phase difference at a wavelength of 1064 nm is 100 nm or less. Has been proposed (see Patent Document 6).

JP 2006-135272 A Special table 2011-510518 gazette US Patent Application Publication No. 2011/0272092 JP 2009-224621 A JP 2002-192367 A JP 2011-139042 A

  However, the pressure-sensitive adhesive tape for semiconductor processing described in Patent Document 4 has strong adhesiveness required for physical and mechanical peeling of the support member as described in Patent Documents 2 and 3 described above. However, when the support member is peeled from the semiconductor wafer, there is a problem that the semiconductor wafer is peeled off from the semiconductor processing adhesive tape. Moreover, the adhesive tape for semiconductor processing described in Patent Document 4 does not have the laser transmittance required for stealth dicing as shown in Patent Document 5, and has a problem that it cannot be used for stealth dicing. .

  Further, the dicing tape described in Patent Document 6 does not have the strong adhesiveness required for the physical and mechanical peeling of the support member as described in Patent Documents 2 and 3 described above. Instead of peeling the support member from the semiconductor wafer, there is a problem that the semiconductor wafer peels from the adhesive tape for semiconductor processing. Moreover, the dicing tape described in Patent Document 6 has a problem that it does not have the solvent resistance required in the processes described in Patent Documents 1 to 3.

  Therefore, the present invention has strong adhesiveness required for physical and mechanical peeling of the support member, and the support member is attached to the semiconductor wafer in the manufacturing process of the semiconductor element using the support member. Even when the cleaning solution for cleaning the adhesive residue that has been applied is applied to the adhesive, the adhesive does not dissolve and contaminate the semiconductor element, and transmits the laser necessary for stealth dicing. An object of the present invention is to provide an adhesive tape for semiconductor processing, in which a laser beam is incident on a semiconductor wafer to form a modified layer, and the semiconductor wafer can be separated into semiconductor chips.

  As a result of intensive studies to achieve the above object, the inventors of the present invention are pressure-sensitive adhesive tapes for semiconductor processing having a pressure-sensitive adhesive layer on a base resin film, and methyl isobutyl ketone for the pressure-sensitive adhesive layer. By setting the contact angle to a specific value, the adhesive does not dissolve and contaminate the semiconductor element even when the cleaning liquid is applied to the adhesive, and the wavelength of 1064 nm incident from the base resin film side It has been found that by setting the parallel light transmittance of the light beam to a specific value, the laser beam incident through the semiconductor tape reaches the semiconductor wafer without being diffused and can be processed by the laser. The present invention has been made based on this finding.

  That is, the pressure-sensitive adhesive tape for semiconductor processing according to the present invention is a pressure-sensitive adhesive tape for semiconductor processing in which a radiation-curable pressure-sensitive adhesive layer is formed on at least one surface of the base resin film, and before the irradiation of the pressure-sensitive adhesive layer The contact angle with respect to methyl isobutyl ketone is 25.1 ° to 60 °, and the parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side is 88% or more and less than 100%.

  The pressure-sensitive adhesive layer contains silicon acrylate or a fluorine-containing oligomer, and the content of the silicon acrylate or fluorine-containing oligomer is more than 0% by mass and more than 5% by mass with respect to the total solid content of the pressure-sensitive adhesive layer. Less is preferred.

  The adhesive tape for semiconductor processing preferably has a gel fraction of 65% or more and 100% or less with respect to the methyl isobutyl ketone before the irradiation of the pressure-sensitive adhesive layer.

  The semiconductor processing pressure-sensitive adhesive tape preferably has a peak value in a probe tack test of 200 to 600 kPa before the radiation-curable pressure-sensitive adhesive layer is irradiated with ultraviolet rays.

  According to the present invention, the support member has strong adhesiveness required for physical and mechanical peeling of the support member, and the support member is attached to the semiconductor wafer in the manufacturing process of the semiconductor element using the support member. Even when the cleaning solution for cleaning the adhesive residue that has been applied is applied to the adhesive, the adhesive does not dissolve and contaminate the semiconductor element, and transmits the laser necessary for stealth dicing. Then, a laser beam is incident on the semiconductor wafer to form a modified layer, and the semiconductor wafer can be separated into semiconductor chips.

  Hereinafter, embodiments of the present invention will be described in detail.

  In the adhesive tape for semiconductor processing according to the embodiment of the present invention, at least one adhesive layer is formed on at least one side of the base resin film.

  In the pressure-sensitive adhesive tape for semiconductor processing according to the embodiment of the present invention, the contact angle of the pressure-sensitive adhesive layer with respect to methyl isobutyl ketone is 25 ° or more, preferably 28 ° or more, more preferably 30 ° or more. Usually, the cleaning of the adhesive residue on the semiconductor wafer caused by the peeling of the support member with chemicals is performed from above the semiconductor wafer while spinning the semiconductor wafer attached to the ring frame via the dicing tape. The chemical is sprayed in a shower-like manner, and the chemical droplets are discharged radially from the central portion of the rotating semiconductor wafer by centrifugal force. At this time, if the contact angle of the pressure-sensitive adhesive layer to methyl isobutyl ketone is 25 ° or more, the wettability of methyl isobutyl ketone to the pressure-sensitive adhesive layer is low, and the contact area between the pressure-sensitive adhesive layer and methyl isobutyl ketone is reduced. Since the discharge of chemical droplets can be performed efficiently, the adhesive action of the adhesive layer from methyl isobutyl ketone is reduced, and the adhesive tape for semiconductor processing may be exposed to chemicals such as methyl isobutyl ketone and its derivatives In the manufacturing process of a certain semiconductor element, the adhesive does not melt and the semiconductor chip is not contaminated by the chemical. On the other hand, when the contact angle is smaller than 25 °, the wettability of methyl isobutyl ketone to the pressure-sensitive adhesive layer is high, the contact area between the pressure-sensitive adhesive layer and methyl isobutyl ketone is increased, and the pressure-sensitive adhesive layer has a dissolving action received from methyl isobutyl ketone. In the manufacturing process of a semiconductor element in which the semiconductor processing adhesive tape is likely to be exposed to chemicals such as methyl isobutyl ketone and its derivatives, the adhesive melted by the chemicals contaminates the semiconductor chip.

  In the present invention, the contact angle of the pressure-sensitive adhesive layer surface with methyl isobutyl ketone means the contact angle immediately after the contact of the pressure-sensitive adhesive layer surface with methyl isobutyl ketone. This contact angle is a value measured at a temperature of 23 ° C. and a humidity of 50%. The measurement can be performed using a commercially available contact angle measuring device. In addition, the contact angle with respect to the methyl isobutyl ketone of the adhesive layer surface in this invention shall be measured about the adhesive layer before radiation irradiation.

  Moreover, the pressure-sensitive adhesive tape for semiconductor processing according to the embodiment of the present invention has a parallel light transmittance of 88% or more and less than 100% of light having a wavelength of 1064 nm incident from the base resin film side. When the parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side is less than 88%, the semiconductor processing adhesive tape is bonded to the semiconductor wafer, and then the laser beam is applied to the semiconductor wafer through the semiconductor processing adhesive tape. When the laser beam is incident, the laser beam is attenuated or diffused before reaching the semiconductor wafer, a modified layer cannot be formed inside the semiconductor wafer, and the semiconductor wafer cannot be separated into semiconductor chips. .

  It is preferable that the gel fraction of methyl isobutyl ketone before irradiation of the pressure-sensitive adhesive layer is 65% or more and 100% or less. When the contact angle of the pressure-sensitive adhesive layer with respect to methyl isobutyl ketone is 25 ° or more and the gel fraction is 65% or more and 100% or less, adhesive residue on the semiconductor wafer generated when the support member is peeled off When cleaning with chemicals, in the unlikely event that a malfunction such as equipment failure occurs and the adhesive on the dicing tape is exposed to chemicals for a long time, the adhesive melts due to the above chemicals. The semiconductor chip is not contaminated.

  In the present invention, the gel fraction means the ratio of the crosslinked pressure-sensitive adhesive component excluding the cross-linked component in the pressure-sensitive adhesive layer. The method described below was used for calculation of the gel fraction. In the present invention, the gel fraction is a state where the pressure-sensitive adhesive layer surface is protected by a separator or the like immediately after the pressure-sensitive adhesive layer is formed, and is measured for the pressure-sensitive adhesive layer before irradiation with energy rays.

(Calculation of gel fraction)
The separator was removed from the semiconductor processing adhesive tape cut to a size of 50 mm × 50 mm, and its mass A was weighed. Next, this weighed sample of the adhesive tape for semiconductor processing was allowed to stand for 48 hours in a state immersed in, for example, 100 g of methyl isobutyl ketone (MIBK), and then dried in a constant temperature layer at 50 ° C., and its mass B was weighed. Further, the pressure-sensitive adhesive layer of the sample was wiped off using 100 g of ethyl acetate, and then the mass C of the sample was weighed, and the gel fraction was calculated by the following formula (1).
Gel fraction (%) = (BC) / (AC) (1)

  Moreover, it is preferable that the peak value of the probe tack test before the radiation irradiation of an adhesive layer is 200-600 kPa. If the peak value of the probe tack test is too small, the adhesion of the pressure-sensitive adhesive layer to the adherend is insufficient, and the support member is bonded to the semiconductor wafer via an adhesive in order to provide support to the semiconductor wafer. When peeling off, it peels between a semiconductor wafer and an adhesive tape, and it becomes difficult to peel a support member from a semiconductor wafer. If the peak value of the probe tack test is too large, glue residue that adheres to the adhesive layer residue on the chips picked up by dividing the semiconductor wafer, or chipping due to contact between the chips when picking up the chips may occur. It becomes easy. The method described below is used for the probe tack measurement.

(Measurement of probe tack)
The probe tack is measured by using, for example, a tacking tester TAC-II manufactured by Resuka Co., Ltd. As the measurement mode, “Constant Load” is used in which the probe is pushed down to the set pressurization value and controlled to hold the pressurization value until the set time elapses. After peeling the separator, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape is turned up, and a probe made of SUS304 having a diameter of 3.0 mm is brought into contact with the upper side. The speed at which the probe is brought into contact with the measurement sample is 30 mm / min, the contact load is 0.98 N, and the contact time is 1 second. Thereafter, the probe is peeled upward at a peeling speed of 600 mm / min, and the force required for peeling is measured. The probe temperature is 23 ° C., and the plate temperature is 23 ° C.

  Hereafter, each component of the adhesive tape for semiconductor processing of this embodiment is demonstrated in detail.

(Base resin film)
The base resin film needs to be light transmissive in order to form a modified region on a semiconductor wafer by making a laser incident through an adhesive tape for semiconductor processing. In order for the laser to enter through the adhesive tape for semiconductor processing, the parallel light transmittance of the adhesive tape for semiconductor processing needs to be 88% or more and less than 100%, but the diffused light is reduced by applying the adhesive layer. Therefore, it is not necessary to consider diffused light with the base resin film alone, and the parallel light transmittance of the base resin film is not necessarily 88% or more and less than 100%.

  Examples of the material constituting the base resin film include polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer, and polybutene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, and ethylene- (Meth) acrylic acid ester copolymer such as ethylene copolymer, polyethylene terephthalate, polybutylene terephthalate, polycarbonate, polymethyl methacrylate engineering plastics, soft polyvinyl chloride, semi-rigid polyvinyl chloride, polyester, polyurethane, Polymer materials such as polyamide, polyimide natural rubber and synthetic rubber are preferred. Moreover, what mixed 2 or more types chosen from these groups, or what was multilayered may be sufficient, and it can select arbitrarily by adhesiveness with an adhesive layer. The base resin film is more preferably a film using an ethylene-acrylic acid copolymer ionomer.

  The thickness of the base resin film is not particularly limited, but is preferably 10 to 500 μm, more preferably 40 to 400 μm, and particularly preferably 70 to 250 μm.

  It is preferable that the surface roughness (arithmetic mean roughness Ra) of the surface on the opposite side to the surface which the adhesive of the base resin film contacts is 0.1 to 0.3 μm, and is 0.12 to 0.18 μm. I like it better. The surface roughness of the surface of the base resin film opposite to the surface where the adhesive is in contact is determined by the solution casting method by adjusting the surface roughness of the cooling roll during film extrusion in the case of the T-die method or calendar method. The case can be controlled by adjusting the surface roughness of the drum or belt. It can also be controlled by coating various resins on a film having an arbitrary surface roughness. If the surface roughness of the surface of the base resin film opposite to the surface that is in contact with the adhesive is greater than 0.3 μm, the parallel light transmittance of the adhesive tape for semiconductor processing decreases, and the laser passes through the adhesive tape for semiconductor processing. Makes it difficult to form a modified region in the semiconductor wafer. If the surface roughness of the surface of the base resin film opposite to the surface in contact with the adhesive is less than 0.1 μm, the slippage of the surface of the base resin film opposite to the surface in contact with the adhesive is extremely high. Deteriorating, causing problems in the transport process in various devices.

  The surface of the base resin film that contacts the pressure-sensitive adhesive layer may be subjected to a corona treatment or a treatment such as a primer in order to improve adhesion.

(Adhesive layer)
The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer is an ultraviolet curable pressure-sensitive adhesive, the contact angle of the surface of the pressure-sensitive adhesive layer with respect to methyl isobutyl ketone before irradiation with ultraviolet light is 25.1 ° to 60 °, and total light transmission at a wavelength of 1064 nm. As long as the rate is 88% or more and less than 100%, there is no particular limitation, and it can be appropriately selected from conventionally known pressure-sensitive adhesives. For example, rubber adhesive using natural rubber or synthetic rubber, acrylic adhesive using poly (meth) acrylic acid alkyl ester or copolymer of (meth) acrylic acid alkyl ester and other monomers, etc. General pressure-sensitive adhesives such as polyurethane pressure-sensitive adhesives, polyester-based pressure-sensitive adhesives, and polycarbonate-based pressure-sensitive adhesives can be used, and UV curable resins such as UV-curable monomer components and oligomer components are blended with these general pressure-sensitive adhesives. UV curable adhesive using a carbon-carbon double bond-introduced acrylic polymer having a carbon-carbon double bond in the polymer side chain or in the main chain or at the end of the main chain as a base polymer An agent can be illustrated. When a carbon-carbon double bond-introduced acrylic polymer having a carbon-carbon double bond in the polymer side chain or in the main chain or at the end of the main chain is used as the base polymer, the UV-curable monomer component or It is not necessary to add an ultraviolet curable resin such as an oligomer component.

  As the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer, acrylic using poly (meth) acrylic acid ester or a copolymer of (meth) acrylic acid ester and other monomers (hereinafter collectively referred to as acrylic polymer). System adhesives are preferred.

  As a constituent component of the acrylic polymer, examples of the (meth) acrylic acid ester include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, (meth) Butyl acrylate, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, Octyl (meth) acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate , Undecyl (meth) acrylate, dodecyl (meth) acrylate, (me (Meth) acrylic acid alkyl esters such as tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate; (Meth) acrylic acid cycloalkyl ester such as methacrylic acid cyclohexyl; (meth) acrylic acid aryl ester such as phenyl (meth) acrylate and the like. (Meth) acrylic acid esters can be used alone or in combination of two or more.

  The method for producing the acrylic polymer is not particularly limited, but in order to increase the weight average molecular weight with a crosslinking agent, or to introduce an ultraviolet curable carbon-carbon double bond by a condensation reaction or addition reaction, It preferably has a functional group such as a carboxyl group or a glycidyl group.

  The introduction of the ultraviolet curable carbon-carbon double bond into the acrylic polymer is carried out by copolymerizing the acrylic polymer component and the monomer having a functional group to prepare an acrylic polymer having a functional group, and then the functional group. A compound having a functional group capable of reacting with a functional group in an acrylic polymer having carbon and a carbon-carbon double bond is converted to an acrylic polymer having a functional group by ultraviolet curing of the carbon-carbon double bond (ultraviolet polymerizable). It can be prepared by carrying out a condensation reaction or an addition reaction while maintaining the above.

  The acrylic polymer having a functional group can be copolymerized with a constituent (meth) acrylic acid ester, and a monomer having a functional group such as a hydroxyl group, a carboxyl group, or a glycidyl group (copolymerizable monomer) is copolymerized. It can be obtained by polymerization. Examples of monomers that can be copolymerized with (meth) acrylic acid ester and have a hydroxyl group include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) ) Acrylate, 6-hydroxyhexyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, glycerin mono (meth) acrylate and the like. As a monomer that can be copolymerized with (meth) acrylic acid ester and has a carboxyl group, (meth) acrylic acid (acrylic acid, methacrylic acid), itaconic acid, maleic acid, fumaric acid, crotonic acid, And isocrotonic acid. Examples of the monomer that can be copolymerized with (meth) acrylic acid ester and have a glycidyl group include glycidyl (meth) acrylate.

  As a compound having a functional group capable of reacting with a functional group and a carbon-carbon double bond, when the functional group to be subjected to a condensation reaction or addition reaction is a hydroxyl group, 2-isocyanatoethyl (meth) acrylate 1,1- (bisacryloyloxymethyl) ethyl isocyanate and the like. When the functional group to be subjected to the condensation reaction or addition reaction is a carboxyl group, glycidyl methacrylate, allyl glycidyl ether and the like can be mentioned. When the functional group to be subjected to the condensation reaction or addition reaction is a glycidyl group, unsaturated carboxylic acids such as (meth) acrylic acid and the like can be mentioned.

  The acrylic polymer preferably has a low content of low molecular weight materials from the viewpoint of preventing contamination of a workpiece such as a semiconductor device. From this viewpoint, the weight average molecular weight of the acrylic polymer is preferably 100,000 or more, and more preferably 200,000 to 2,000,000. If the weight average molecular weight of the acrylic polymer is too small, the anti-contamination property to the workpiece such as a semiconductor device is lowered, and if too large, the viscosity of the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 5 becomes extremely high, It becomes difficult to manufacture an adhesive tape for semiconductor processing.

  In addition, the acrylic polymer preferably has a glass transition point of −70 ° C. to 0 ° C., more preferably −65 ° C. to −20 ° C., from the viewpoint of developing adhesiveness. If the glass transition point is too low, the viscosity of the polymer becomes low and it becomes difficult to form a stable coating film. If the glass transition point is too high, the pressure-sensitive adhesive becomes hard and the wettability to the adherend deteriorates.

  The acrylic polymer may be used alone, or two or more acrylic polymers may be mixed and used as long as compatibility is allowed.

  The ultraviolet curable resin used in the pressure-sensitive adhesive layer by blending with a general pressure-sensitive adhesive is not particularly limited, but examples include urethane (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, poly Examples thereof include oligomers having a functional group such as a hydroxyl group or a carboxyl group such as ether (meth) acrylate, (meth) acrylic acid oligomer and itaconic acid oligomer.

  Moreover, a photoinitiator can be mix | blended with the adhesive used for this invention. Examples of the photopolymerization initiator include isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethylketanol, α-hydroxycyclohexyl phenylketone, 2-hydroxymethylphenol. Examples include enilpropane. By adding at least one of these to the pressure-sensitive adhesive, the curing reaction of the pressure-sensitive adhesive layer 5 can be efficiently advanced, and thereby the fixed adhesive force of the semiconductor device can be appropriately reduced.

  The addition amount of the photopolymerization initiator is preferably 0.5 to 10 parts by mass with respect to 100 parts by mass of the ultraviolet curable resin. When a carbon-carbon double bond-introduced acrylic polymer having a carbon-carbon double bond in the polymer side chain or in the main chain or at the end of the main chain is used as the base polymer, the carbon-carbon double bond-introduced acrylic It is good to set it as 0.5-10 mass parts with respect to 100 mass parts of a polymer.

  Furthermore, the pressure-sensitive adhesive used in the present invention can be blended with a tackifier, a tackiness modifier, a surfactant, or other modifiers, if necessary. Moreover, you may add an inorganic compound filler suitably.

  The tackiness of the pressure-sensitive adhesive layer can be appropriately controlled by controlling the crosslinking density of the pressure-sensitive adhesive material. Control of the crosslinking density of the adhesive material can be achieved, for example, through an appropriate crosslinking agent such as a polyfunctional isocyanate compound, an epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, an amino resin compound, or a peroxide. It is possible to carry out by an appropriate method such as a method of crosslinking treatment and a method of mixing a compound having two or more carbon-carbon double bonds and crosslinking treatment by irradiation with energy rays.

  The contact angle of the pressure-sensitive adhesive layer with respect to methyl isobutyl ketone on the surface of the pressure-sensitive adhesive layer before ultraviolet irradiation can be adjusted by adjusting the comonomer ratio of the acrylic polymer and blending a silicone resin, a fluororesin or the like as an additive. It is also possible to combine these with adjustment based on the number average molecular weight of the ultraviolet curable resin. In the adjustment by the comonomer ratio of the acrylic polymer, a (meth) acrylic acid alkyl ester having an alkyl chain having 4 or more carbon atoms, more preferably a (meth) acrylic acid alkyl ester having an alkyl chain having 8 or more carbon atoms is used. It is desirable that the (meth) acrylic acid alkyl ester having 4 or more carbon atoms in the alkyl chain, more preferably 8 or more carbon atoms in the alkyl chain, is contained in an amount of 50% by mass or more based on the entire comonomer. As the silicone resin used as the additive, a silicon-modified acrylate can be used, and as the fluororesin, a fluorine-containing oligomer can be used. In particular, a silicon-modified acrylate can be preferably used. Especially, it is preferable to contain silicon acrylate or a fluorine-containing oligomer, and it is preferable that the content is more than 0 mass% and less than 5 mass% with respect to the total solid of an adhesive layer.

  The thickness of the pressure-sensitive adhesive layer is preferably 5 to 70 μm, more preferably 8 to 50 μm, and further preferably 10 to 30 μm. If the pressure-sensitive adhesive layer is too thin, it will not be able to follow the unevenness of the electrode, causing the problem that cutting water and cutting waste will enter during dicing, and conversely if it is too thick, chipping will increase during dicing. The quality of the element deteriorates.

  In order to set the parallel light transmittance at a wavelength of 1064 nm of the adhesive tape for semiconductor processing to 88% or more and less than 100%, the total light transmittance at a wavelength of 1064 nm of the material used for the adhesive layer is 88% or more and less than 100%, The surface roughness (arithmetic average roughness Ra) of the pressure-sensitive adhesive layer surface is preferably 0.3 μm or less.

  In the present invention, the energy beam for curing the pressure-sensitive adhesive layer is preferably radiation, and examples of the radiation include light rays such as ultraviolet rays (UV), electron beams, and the like.

  The method for forming the pressure-sensitive adhesive layer on the base resin film is not particularly limited. For example, the above-mentioned acrylic resin composition can be formed by applying and drying the base resin film on a base resin film by a commonly used coating method. It can produce by sticking the adhesive layer apply | coated on the base resin film and transferring to a base resin film.

  Moreover, you may stick the synthetic resin film normally used as a separator on the adhesive layer side in order to protect an adhesive layer until it uses for practical use as needed. Examples of the constituent material of the synthetic resin film include synthetic resin films such as polyethylene, polypropylene, and polyethylene terephthalate, and paper. The surface of the synthetic resin film may be subjected to release treatment such as silicone treatment, long-chain alkyl treatment, fluorine treatment, etc., as necessary, in order to enhance the peelability from the pressure-sensitive adhesive layer 3. The thickness of the synthetic resin film is usually about 10 to 100 μm, preferably about 25 to 50 μm.

  Next, the support member will be described.

(Support material)
The support member is made of a material selected from the group consisting of silicon, sapphire, crystal, metal (eg, aluminum, copper, steel), various glasses and ceramics. The surface of the support member to which the adhesive is applied can also include other deposited materials. For example, it is possible to deposit silicon nitride on a silicon wafer, thereby changing the bonding characteristics.

(Paste of support member)
When affixing the support member, an adhesive solution of an adhesive described later is applied to the circuit forming surface of the semiconductor wafer, and then the applied adhesive is dried in an oven or a hot plate. Moreover, in order to obtain the required thickness of the adhesive (adhesive layer), the application of the adhesive liquid and the preliminary drying may be repeated a plurality of times.

  Further, in applying the adhesive liquid of the adhesive to the circuit forming surface of the semiconductor wafer, before applying the adhesive liquid of the adhesive, as shown in JP-T-2009-528688, By depositing the plasma polymer separation layer on the circuit surface, the support member may be separated between the circuit formation surface of the semiconductor wafer and the plasma polymer separation layer.

  Further, when the adhesive liquid is applied to the circuit forming surface of the semiconductor wafer by a spin coater, a bead portion that is raised one step at the peripheral portion may be formed. In this case, it is preferable to remove the bead portion with a solvent before the adhesive liquid is pre-dried.

(adhesive)
As the adhesive, a commercially available adhesive can be used in the present invention. For example, WaferBONDTM material (WaferBONDTM HT 10.10 for slide bonding process, WaferBONDTM CR200 for chemical bonding process) and ELASTOSIL, a material of Berghausen manufactured by WACKER, sold by Brewer Science (Laura, Missouri) LR 3070 etc. are mentioned.

  Also preferred are resins or polymers that exhibit high adhesion to semiconductor materials, glass or metals, and particularly preferred are, for example, (a) UV curable resins such as reactive epoxies and acrylics at high solids, (B) Thermosetting resins of the same family such as two-part epoxy or silicone adhesives, (c) Thermoplastic acrylic resins, styrene resins, vinyl halide (fluorine-free) resins or vinyl ester polymers And the copolymers are coated with polyamides, polyimides, polysulfones, polyethersulfones, or polyurethanes in a molten state or as a solution coating, and dried by baking after coating to form the support member and the semiconductor wafer. Further, (d) Cyclic olefins and polyolefin rubbers (for example, polyisobutylene) Others include tackifying resins which is based on (e) hydrocarbons.

  As the adhesive, water is used at the time of polishing, so a water-insoluble polymer compound is preferable, and a high softening point is desirable. As such a high molecular compound, a novolac resin, an epoxy resin, an amide resin, a silicon resin, an acrylic resin, a urethane resin, polystyrene, polyvinyl ether, polyvinyl acetate, a modified product thereof, or a mixture thereof is dissolved in a solvent. Can be mentioned. Among them, the acrylic resin material is preferable because it has a heat resistance of 200 ° C. or higher, generates less gas, and hardly generates cracks. In addition, novolak resin has no scum, heat resistance, generated gas amount and generation of cracks are inferior to acrylic resin materials, but are in a practical range, have a high softening point, and solvent peeling is easy even after peeling. This is preferable. In addition to this, a plasticizer may be mixed to prevent cracks during film formation.

  The solvent is preferably one that can dissolve the above-mentioned resin and can be uniformly formed on the wafer, such as ketones (for example, acetone, methyl ethyl ketone, cyclohexane, methyl isobutyl ketone, methyl isoamyl ketone, 2-heptanone, etc.), many Monohydric alcohols or derivatives thereof (for example, ethylene glycol, propylene glycol, diethylene glycol, ethylene glycol monoacetate, propylene glycol monoacetate, diethylene glycol monoacetate or their monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether) Etc.), cyclic ethers (eg, dioxane), esters (eg, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, pills) Methyl phosphate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate, etc.) or aromatic hydrocarbons (e.g., benzene, toluene, xylene, etc.). Among these, the above ketones or derivatives thereof are particularly preferable.

  These may be used alone or in combination of two or more. In order to improve the uniformity of the film thickness, an activator may be added thereto.

(Cleaning solution for adhesive residue)
After removing the adhesive and the support member from the semiconductor wafer, as a cleaning liquid for removing the adhesive residue remaining on the semiconductor wafer, in addition to the organic solvent used for the adhesive, monohydric alcohols (for example, Methanol, ethanol, propanol, isopropanol, butanol, etc.), lactones (eg, γ-butyrolactone, etc.), lactams (eg, γ-butyrolactam, etc.), ethers (eg, diethyl ether, anisole, etc.), aldehydes (eg, Dimethylformaldehyde, dimethylacetaldehyde, etc.) may be used. Of these, the aforementioned ketones or derivatives thereof are particularly preferable.

  These may be used alone or in combination of two or more. Moreover, in order to wash | clean an adhesive residue efficiently, you may add an activator to these.

  Next, the present invention will be described in more detail based on examples. EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.

Example 1
Methyl acrylate, 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate were copolymerized at a ratio of 5: 14: 1 in ethyl acetate by a conventional method to obtain a solution containing an acrylic polymer. Subsequently, 50 parts by mass of an ultraviolet curable oligomer obtained by reacting a solution containing the acrylic polymer with pentaerythritol triacrylate and diisocyanate as an ultraviolet curable compound, and Irgacure 651 (trade name, BASF) 2.5 parts by mass, 1.0 parts by mass of trimethylolpropane-modified tolylene diisocyanate as a polyisocyanate compound, and 0.15 parts by mass of silicon-modified acrylate are added to form a radiation curable adhesive. A resin composition was prepared. This resin composition was applied onto a release treatment surface of a polyethylene terephthalate separator that had been subjected to a release treatment in advance so that the thickness of the pressure-sensitive adhesive layer after drying was 10 μm, and was dried at 80 ° C. for 10 minutes. Thereafter, an ionomer film (base) of an ethylene-acrylic acid copolymer prepared such that the surface to which the pressure-sensitive adhesive layer is bonded in advance is subjected to corona treatment and the surface roughness of the opposite surface is 0.12. A pressure-sensitive adhesive tape for semiconductor processing was prepared by bonding the material to the corona-treated surface of the material resin film) and transferring the pressure-sensitive adhesive to the base resin film.

(Example 2)
A semiconductor processing pressure-sensitive adhesive tape was produced in the same manner as in Example 1 except that 0.77 parts by mass of silicon-modified acrylate was blended.

(Example 3)
A semiconductor processing adhesive tape was prepared in the same manner as in Example 1 except that 8.08 parts by mass of silicon-modified acrylate was blended.

Example 4
The photopolymerizable carbon-carbon duplex is bonded to the 3-hydroxypropyl acrylate side chain terminal OH group of a copolymer of 2-ethylhexyl acrylate (70 mol%), methacrylic acid (1 mol%), and 2-hydroxypropyl acrylate (29 mol%). As a compound having a bond and a functional group, an acrylic compound (A1: molecular weight 700,000) having a photopolymerizable carbon-carbon double bond obtained by addition reaction of the NCO group of 2-methacryloyloxyethyl isocyanate was obtained. To 100 parts by mass of this compound (A1), 1 part by mass of trimethylolpropane-modified hexamethylene diisocyanate as polyisocyanate and 5.0 parts by mass of Irgacure 184 (trade name, manufactured by BASF) as a photopolymerization initiator were added. A resin composition that was a radiation-curable adhesive was prepared. This resin composition was applied onto a release treatment surface of a polyethylene terephthalate separator that had been subjected to a release treatment in advance so that the thickness of the pressure-sensitive adhesive layer after drying was 10 μm, and was dried at 80 ° C. for 10 minutes. Thereafter, corona treatment is applied to the surface to which the pressure-sensitive adhesive layer is bonded in advance, and corona treatment of low-density polyethylene (base resin film) prepared so that the surface roughness of the opposite surface is 0.18 μm. The adhesive tape for semiconductor processing was produced by sticking to the surface and transferring the adhesive to the base resin film.

(Example 5)
An adhesive tape for semiconductor processing was produced in the same manner as in Example 4 except that 0.11 part by mass of silicon-modified acrylate was blended.

(Example 6)
A semiconductor processing pressure-sensitive adhesive tape was produced in the same manner as in Example 4 except that 0.53 parts by mass of silicon-modified acrylate was blended.

(Example 7)
An adhesive tape for semiconductor processing was produced in the same manner as in Example 4 except that 5.58 parts by mass of silicon-modified acrylate was blended.

(Example 8)
A semiconductor processing pressure-sensitive adhesive tape was produced in the same manner as in Example 1 except that 0.15 parts by mass of the fluorine-containing oligomer was blended.

Example 9
Ethyl acrylate, butyl acrylate and 2-hydroxyethyl acrylate were copolymerized at a ratio of 10: 9: 1 in ethyl acetate by a conventional method to obtain a solution containing an acrylic polymer. Subsequently, 50 parts by mass of an ultraviolet curable oligomer obtained by reacting a solution containing the acrylic polymer with pentaerythritol triacrylate and diisocyanate as an ultraviolet curable compound, and Irgacure 651 (trade name, BASF) 2.5 parts by mass, 1.0 parts by mass of trimethylolpropane-modified tolylene diisocyanate as a polyisocyanate compound, and 0.31 parts by mass of silicon-modified acrylate are added to form a radiation curable adhesive. A resin composition was prepared. This resin composition was applied onto a release treatment surface of a polyethylene terephthalate separator that had been subjected to a release treatment in advance so that the thickness of the pressure-sensitive adhesive layer after drying was 10 μm, and was dried at 80 ° C. for 10 minutes. Thereafter, an ethylene-methacrylic acid copolymer (base resin film) prepared so that the surface to which the pressure-sensitive adhesive layer is bonded is subjected to corona treatment in advance, and the surface roughness on the opposite side is 0.3. The adhesive tape for semiconductor processing was prepared by transferring the adhesive to the base resin film.

(Example 10)
A semiconductor processing pressure-sensitive adhesive tape was produced in the same manner as in Example 9, except that 0.77 parts by mass of silicon-modified acrylate was blended.

(Example 11)
A pressure-sensitive adhesive tape for semiconductor processing was prepared in the same manner as in Example 4 except that 0.1 part by mass of trimethylolpropane-modified hexamethylene diisocyanate was added as a polyisocyanate.

(Example 12)
A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 2 except that 30 parts by mass of the ultraviolet curable oligomer obtained by reacting pentaerythritol triacrylate and diisocyanate was changed.

(Comparative Example 1)
A semiconductor processing adhesive tape was prepared in the same manner as in Example 1 except that the silicon-modified acrylate was not blended.

(Comparative Example 2)
A semiconductor processing pressure-sensitive adhesive tape was produced in the same manner as in Example 9 except that 0.15 parts by mass of silicon-modified acrylate was blended.
(Comparative Example 3)
A semiconductor processing pressure-sensitive adhesive tape was produced in the same manner as in Example 1 except that the surface roughness of the surface of the base resin film opposite to the surface on which the pressure-sensitive adhesive layer was bonded was 1.1 μm.

  About each sample of Examples 1-11 and Comparative Examples 1-3, the evaluation test was done as follows about contact angle, probe tack, gel fraction, solvent resistance, and peelability of a support member. The obtained results are summarized in Tables 1 and 2 below.

<Contact angle of the adhesive layer surface>
Since it is necessary to perform measurement on a flat surface, the surface of the base resin film on which the adhesive layer is not provided was fixed to a glass plate having a flat surface using a double-sided tape. After peeling off the separator, methyl ethyl ketone was added dropwise, and the contact angle θ was measured using a FACE contact angle meter CA-S150 manufactured by Kyowa Chemical Co., Ltd. The measurement temperature is 23 ° C. and the measurement humidity is 50%. The measurement of the contact angle on the surface of the pressure-sensitive adhesive layer was carried out in a state before performing ultraviolet irradiation on the pressure-sensitive adhesive tape.

<Probe tack>
This was carried out using a tacking tester TAC-II manufactured by Leska. As the measurement mode, “Constant Load” was used in which the probe was pushed to the set pressure value and kept controlled until the set time passed. After the separator was peeled off, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing was turned up, and a probe made of SUS304 having a diameter of 3.0 mm was brought into contact from above. The speed at which the probe is brought into contact with the measurement sample is 30 mm / min, the contact load is 0.98 N, and the contact time is 1 second. Thereafter, the probe was peeled upward at a peeling speed of 600 mm / min, the force required for peeling was measured, and the peak value was read. The probe temperature was 23 ° C. and the plate temperature was 23 ° C.

<Gel fraction>
The separator was removed from the semiconductor processing adhesive tape cut to a size of 50 mm × 50 mm, and its mass A was weighed. Next, this weighed sample of the dicing tape for semiconductor processing was left for 48 hours in a state immersed in 100 g of methyl isobutyl ketone (MIBK), and then dried in a constant temperature layer at 50 ° C., and its mass B was weighed. Further, the pressure-sensitive adhesive layer of the sample was wiped off using 100 g of ethyl acetate, and then the mass C of the sample was weighed, and the gel fraction was calculated by the following formula (1).
Gel fraction (%) = (BC) / (AC) (1)

<Surface roughness Ra>
The surface of the adhesive tape for semiconductor processing obtained in Examples and Comparative Examples is fixed by pasting the surface side to which the adhesive is applied to a smooth mirror wafer, and the arithmetic surface on the surface side where the adhesive is not applied Roughness Ra was measured at any five locations in the extrusion direction (MD direction) of the base resin film using a surface roughness measuring instrument (trade name: Surf Test SJ-301, manufactured by Mitutoyo Corporation) and averaged. Asked.

<Parallel light transmittance>
The parallel light transmittance at a wavelength of 1064 nm from the surface of the pressure-sensitive adhesive tape for semiconductor processing obtained in Examples and Comparative Examples was measured using a transmittance meter (trade name: UV3101PC & MPC-3100, manufactured by Shimadzu Corporation). ) Was used to measure the average value at five arbitrary locations. This apparatus has an integrating sphere type light-receiving part and is capable of measuring the total light transmittance. The parallel light transmittance was measured by separating the fixed position of the sample by 70 mm from the integrating sphere entrance window.

<Solvent resistance 1>
After bonding the adhesive tape for semiconductor processing obtained in Examples and Comparative Examples to an 8-inch semiconductor wafer and fixing it to the ring frame, while spraying methyl isobutyl ketone (MIBK) as an organic solvent from the semiconductor wafer side, Spin cleaning was performed by rotating at 20 rpm. After cleaning and drying, observe the adhesive layer in the area where the semiconductor wafer of the dicing tape for semiconductor processing is not affixed. If the adhesive was not dissolved or swollen, ○, and some adhesives were swollen. Although it was judged that the minor one that had no practical problem was marked as △, it was judged as acceptable, the one that the adhesive was dissolved, and the one that showed severe swelling at a level that would cause a practical problem was marked as × .
<Solvent resistance 2>
The adhesive tape for semiconductor processing obtained in Examples and Comparative Examples was bonded to an 8-inch semiconductor wafer, fixed to a ring frame, and then immersed in methyl isobutyl ketone (MIBK) for 1 hour. Then, after rotating at 20 rpm and spin drying, the adhesive layer in the region where the semiconductor wafer was not pasted of the dicing tape for semiconductor processing was observed. Slight swelling of the adhesive was observed, but a minor one that had no practical problems was marked as △, and it was judged as acceptable, the adhesive was dissolved, and severe swelling was observed at a level causing practical problems X was rejected.

<Support member peelability>
By using the method disclosed in US Patent Application Publication No. 2011/0272092, a plasma polymer separation layer, a silicone rubber adhesive layer, and a support member are formed on a 6-inch silicon wafer having a thickness of about 700 μm. A structure in which 2.5 mm glass plates were sequentially laminated was obtained. Adhere the adhesive tape for semiconductor processing obtained in Examples and Comparative Examples on the wafer back surface (surface on which the plasma polymer separation layer etc. are not laminated) of the structure obtained as described above, and fix it on the ring frame. Then, the peelability of the support member was evaluated by subjecting it to Dess Bonder DB12T manufactured by Suss. Peeling between the plasma polymer separation layer of the support member and the wafer surface, and the support member could be removed from the wafer surface ○, partly peeled between the wafer back and the semiconductor processing adhesive tape, The support member can be removed from the surface of the wafer, and a material that is practically acceptable is marked as △, and it is determined to be acceptable. The wafer is not peeled between the plasma polymer separation layer of the support member and the wafer surface. And the support member could not be removed from the wafer surface was evaluated as x.

<Chip division ratio>
After bonding the adhesive tape for semiconductor processing obtained in Examples and Comparative Examples to a 100 μm thick 8-inch semiconductor wafer and fixing it to the ring frame, it was passed through the adhesive tape for semiconductor processing under the stealth dicing conditions shown below. After forming a modified region inside the semiconductor wafer by irradiating with a laser, using an expanding device (DDS Co., Ltd., DDS2300), the adhesive tape for semiconductor processing is expanded under the conditions of 300 mm / second and 10 mm withdrawal, The wafer was divided into chips. Thereafter, the number of chips that were completely separated into pieces by visual inspection was counted, and those that were divided by 98% or more of the whole were ○, and those that were 90% or more and less than 98% were set as acceptable Δ, and passed. Judgment, less than 90% was judged as x and rejected.
<Stealth dicing conditions>
-Equipment: Nd-YAG laser-Wavelength: 1064 nm
・ Repetition frequency: 100 kHz
・ Pulse width: 30 ns
・ Cut speed: 100 mm / sec ・ Cut chip size: 5 mm × 5 mm

As shown in Tables 1 and 2, Examples 1 to 12 in which the contact angle of the pressure-sensitive adhesive layer with respect to methyl isobutyl ketone before ultraviolet irradiation is 25.1 ° or more and 60 ° or less are the evaluation items for solvent resistance. It is a pass judgment and can be used without any problem in practice in the manufacture of a semiconductor device including a cleaning step of the surface of the semiconductor device using a chemical. Moreover, in Examples 1-12, the parallel light transmittance in wavelength 1064nm of the adhesive tape for semiconductor processing was 88% or more and less than 100%, and showed favorable chip | tip division | segmentation performance.
In comparison between Example 1 and Example 8 and Comparative Example 1, the pressure-sensitive adhesive layer was able to improve solvent resistance by containing silicon acrylate or a fluorine-containing oligomer. In particular, in Example 1, Example 2, Example 4 to Example 6, and Example 8 to Example 12 in which the tack force was 200 to 600 kPa, the results were further excellent in the peeling test of the support member. Further, in Examples 4 to 7, Example 11, and Example 12 in which the gel fraction is 65% or more, the solvent resistance (solvent resistance 2) when immersed in methyl isobutyl ketone (MIBK) for 1 hour. ) Also proved to be excellent.

  On the other hand, in Comparative Example 1 and Comparative Example 2 in which the contact angle of the pressure-sensitive adhesive layer with respect to methyl isobutyl ketone before ultraviolet irradiation is less than 25.1 °, dissolution of the pressure-sensitive adhesive or severe swelling was observed in any solvent resistance test. It was shown that the semiconductor device is not suitable for manufacturing a semiconductor device including a step of cleaning the surface of the semiconductor device using a chemical. Further, in Comparative Example 3 in which the parallel light transmittance at a wavelength of 1064 nm of the dicing tape was less than 88%, sufficient chip division performance could not be obtained.

Claims (3)

A pressure-sensitive adhesive tape for semiconductor processing in which a radiation-curable pressure-sensitive adhesive layer is formed on at least one surface of a base resin film,
The pressure-sensitive adhesive layer contains silicon acrylate or a fluorine-containing oligomer, and the content of the silicon acrylate or fluorine-containing oligomer is more than 0% by mass and more than 5% by mass with respect to the total solid content of the pressure-sensitive adhesive layer. Less
The pressure-sensitive adhesive layer has a contact angle with respect to methyl isobutyl ketone before irradiation of radiation of 25.1 ° to 60 °,
A pressure-sensitive adhesive tape for semiconductor processing, wherein parallel light transmittance of light having a wavelength of 1064 nm incident from the base resin film side is 88% or more and less than 100%. The pressure-sensitive adhesive tape for semiconductor processing according to claim 1, wherein the pressure-sensitive adhesive layer has a gel fraction with respect to the methyl isobutyl ketone before irradiation with radiation of 65% or more and 100% or less . The peak value of the probe tack test before the radiation irradiation of the said adhesive layer is 200-600 kPa , The adhesive tape for semiconductor processing of Claim 1 or Claim 2 characterized by the above-mentioned.