JP4347787B2 - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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JP4347787B2
JP4347787B2 JP2004344530A JP2004344530A JP4347787B2 JP 4347787 B2 JP4347787 B2 JP 4347787B2 JP 2004344530 A JP2004344530 A JP 2004344530A JP 2004344530 A JP2004344530 A JP 2004344530A JP 4347787 B2 JP4347787 B2 JP 4347787B2
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substrate
processing
liquid
pure water
tank
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JP2006156673A (en
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篤史 大澤
浩一郎 橋本
友則 藤原
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Description

この発明は、半導体ウエハ、液晶表示装置用ガラス基板、電子部品などの基板に対し処理液で洗浄等の所定の処理を行う基板処理装置に関する。   The present invention relates to a substrate processing apparatus that performs predetermined processing such as cleaning with a processing liquid on a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display device, or an electronic component.

例えば半導体装置の製造プロセスにおいて、基板、例えばシリコンウエハの表面に付着したシリコン酸化膜、パーティクルや有機物、重金属類やアルカリイオンなどの汚染物質をウエハ表面から除去する場合には、フッ酸、アンモニア水と過酸化水素水との混合溶液、塩酸と過酸化水素水との混合溶液などの各種薬液を使用してウエハを洗浄処理し、薬液によるウエハの洗浄が終わるごとに、ウエハの表面上に残存している薬液や分解生成物、反応生成物等の不要物を純水で洗浄して除去するようにしている。このような洗浄処理を行う基板処理装置において、処理液を貯留してその処理液中に基板を浸漬させて処理する処理槽は、上部が開口しているため、基板の処理中に処理槽内の処理液の液面から処理液のミストが飛散して周囲に拡散したり処理液から蒸発したアンモニア等のアルカリ性ガスやフッ化水素、塩化水素等の酸性ガスが周囲に拡散したりして、処理槽の上部空間を取り囲むように設けられたチャンバ内にミストやガスが滞留することになる。この結果、基板の表面に対して悪影響を及ぼし、また、基板の乾燥処理のためにチャンバ内へIPA(イソプロピルアルコール)を供給したときに、チャンバ内に滞留するアンモニアとIPAとが反応してパーティクルが発生する、といったことが起こる。そこで、処理槽の上部開口付近に排気口を設け、その排気口に排気管を連通接続し、排気口および排気管を通して処理槽の上部開口上の雰囲気を排気する、といったことが行われている(例えば、特許文献1参照。)。
特開2001−316878号公報(第4−5頁、図3)
For example, in the manufacturing process of a semiconductor device, when removing contaminants such as silicon oxide film, particles, organic matter, heavy metals and alkali ions attached to the surface of a substrate, for example, a silicon wafer from the wafer surface, hydrofluoric acid, ammonia water Each time the wafer is cleaned using various chemicals such as a mixed solution of hydrogen and aqueous hydrogen peroxide or a mixed solution of hydrochloric acid and hydrogen peroxide, the wafer remains on the surface of the wafer each time the wafer is cleaned with the chemical. Unnecessary substances such as chemicals, decomposition products, and reaction products are removed by washing with pure water. In the substrate processing apparatus that performs such a cleaning process, the processing tank for storing the processing liquid and immersing the substrate in the processing liquid for processing is open at the top, so that the inside of the processing tank The mist of the processing solution scatters from the surface of the processing solution and diffuses to the surroundings, or the alkaline gas such as ammonia or the acidic gas such as hydrogen fluoride and hydrogen chloride evaporated from the processing solution diffuses to the surroundings. Mist and gas stay in a chamber provided so as to surround the upper space of the processing tank. As a result, the surface of the substrate is adversely affected, and when IPA (isopropyl alcohol) is supplied into the chamber for the substrate drying process, ammonia staying in the chamber reacts with IPA to generate particles. Occurs. Therefore, an exhaust port is provided near the upper opening of the processing tank, an exhaust pipe is connected to the exhaust port, and the atmosphere on the upper opening of the processing tank is exhausted through the exhaust port and the exhaust pipe. (For example, refer to Patent Document 1).
Japanese Patent Laying-Open No. 2001-316878 (page 4-5, FIG. 3)

上記したように、処理槽の上部空間の雰囲気を、処理槽の上部開口付近に設けられた排気口を通って吸入し、排気口に連通接続された排気管を通して排気するようにしたとき、雰囲気中には酸やアルカリ液のミストあるいはアルカリ性ガスや酸性ガスが含まれているため、排気管内において酸とアルカリとの反応により塩が生成する可能性があり、これがパーティクル発生の原因になる、といった問題点がある。   As described above, when the atmosphere of the upper space of the processing tank is sucked through the exhaust port provided near the upper opening of the processing tank and exhausted through the exhaust pipe connected to the exhaust port, the atmosphere Because it contains mist of acid or alkaline liquid or alkaline gas or acid gas, there is a possibility that salt is generated by reaction of acid and alkali in the exhaust pipe, which causes particle generation. There is a problem.

この発明は、以上のような事情に鑑みてなされたものであり、処理槽の上部空間の雰囲気を排気したときに、排気管内に塩が蓄積することを防止してパーティクル発生の原因を取り除くことができる基板処理装置を提供することを目的とする。   The present invention has been made in view of the circumstances as described above, and when the atmosphere in the upper space of the treatment tank is exhausted, salt is prevented from accumulating in the exhaust pipe to eliminate the cause of particle generation. It is an object of the present invention to provide a substrate processing apparatus capable of performing the above.

請求項1に係る発明は、処理液により基板に対し処理を行う基板処理装置において、上部に開口を有し処理液を貯留する処理槽と、前記処理槽内で基板を保持する基板保持手段と、前記処理槽内へ処理液を供給する処理液供給手段と、前記処理槽の上部開口の上方に排気口が設けられ、前記排気口に連通接続された排気管を通して前記処理槽の上部開口上の雰囲気を排気する排気手段と、前記排気管の途中に合流するように純水供給管が連通接続され、前記純水供給管を通して前記排気管内の、前記純水供給管との合流位置から前記排気口までの部分に洗浄用純水を供給する純水供給手段と、を備えることを特徴とする。   According to a first aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate with a processing liquid, a processing tank having an opening in the upper part and storing the processing liquid, and a substrate holding means for holding the substrate in the processing tank; A processing liquid supply means for supplying a processing liquid into the processing tank; and an exhaust port provided above the upper opening of the processing tank, and an upper pipe of the processing tank through an exhaust pipe connected to the exhaust port. The pure water supply pipe is connected in communication with the exhaust means for exhausting the atmosphere in the exhaust pipe so as to join in the middle of the exhaust pipe, and the pure water supply pipe passes through the pure water supply pipe from the confluence position with the pure water supply pipe. And pure water supply means for supplying pure water for cleaning to a portion up to the exhaust port.

請求項2に係る発明は、請求項1に記載の基板処理装置において、前記処理槽の上部開口に対して開閉自在である蓋部材を備え、前記排気口が、閉塞された前記蓋部材と前記処理槽の上部開口とで囲まれた空間に配設されたことを特徴とする。   The invention according to claim 2 is the substrate processing apparatus according to claim 1, further comprising a lid member that is openable and closable with respect to an upper opening of the processing tank, wherein the exhaust port is closed and the lid member It is arrange | positioned in the space enclosed with the upper opening of the processing tank, It is characterized by the above-mentioned.

請求項3に係る発明は、請求項1または請求項2に記載の基板処理装置において、前記純水供給手段は、処理が終わった基板が前記処理槽内から搬出され次に処理すべき基板が前記処理槽内へ搬入されるまでの間に前記排気管内へ純水を供給することを特徴とする。   According to a third aspect of the present invention, in the substrate processing apparatus according to the first or second aspect of the present invention, the pure water supply means includes: a substrate that has been processed is unloaded from the processing tank; Pure water is supplied into the exhaust pipe before being carried into the treatment tank.

請求項1に係る発明の基板処理装置においては、排気手段により、処理槽の上部開口の上方に設けられた排気口を通って処理槽の上部開口上の雰囲気が吸入され排気管を通して排気されたときに、排気管内において雰囲気中に含まれるミストやガス中の酸とアルカリとが反応して塩が生成したとしても、その塩は、純水供給手段により排気管内へ供給される洗浄用純水によって洗い流され、排気管内から除去される。
したがって、請求項1に係る発明の基板処理装置を使用すると、排気管内に塩が蓄積することを防止して、パーティクル発生の原因を取り除くことができる。
In the substrate processing apparatus according to the first aspect of the present invention, the atmosphere on the upper opening of the processing tank is sucked and exhausted through the exhaust pipe by the exhaust means through the exhaust port provided above the upper opening of the processing tank. Sometimes, even if the mist contained in the atmosphere in the exhaust pipe or the acid in the gas reacts with the alkali to produce a salt, the salt is supplied to the exhaust pipe by the pure water supply means. And is removed from the exhaust pipe.
Therefore, when the substrate processing apparatus of the invention according to claim 1 is used, it is possible to prevent the salt from accumulating in the exhaust pipe and to eliminate the cause of the generation of particles.

請求項2に係る発明の基板処理装置では、処理槽内の処理液中に基板を浸漬させて処理しているときに、蓋部材によって処理槽の上部開口を覆蓋することにより、蓋部材によって遮蔽された狭い処理槽上部の空間から排気口を通って雰囲気ガスを効率良く排気することができる。   In the substrate processing apparatus according to the second aspect of the present invention, when the substrate is immersed in the processing liquid in the processing tank and processed, the upper opening of the processing tank is covered with the lid member, thereby being shielded by the lid member. The atmospheric gas can be efficiently exhausted from the space above the narrow processing tank through the exhaust port.

請求項3に係る発明の基板処理装置では、処理が終わった基板が処理槽内から搬出され次に処理すべき基板が処理槽内へ搬入されるまでの間に、純水供給手段により排気管内へ純水が供給されて排気管内から塩が除去されるので、次に処理すべき基板を汚染する心配が無く、また、純水による排気管内の洗浄のために一連の基板処理に要する時間が長くなることもない。   In the substrate processing apparatus according to the third aspect of the present invention, the pure water supply means allows the substrate to be processed in the exhaust pipe until the processed substrate is unloaded from the processing tank and the next substrate to be processed is loaded into the processing tank. Since pure water is supplied to remove salt from the exhaust pipe, there is no fear of contaminating the substrate to be processed next, and the time required for a series of substrate processing for cleaning the exhaust pipe with pure water It won't be long.

以下、この発明の最良の実施形態について図面を参照しながら説明する。
図1は、この発明の実施形態の1例を示し、基板処理装置の概略構成を示す模式図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention.

この基板処理装置は、上部が開口し処理液が貯留される処理槽10を備えている。処理槽10の下部には液体噴出ノズル12が設けられており、処理槽10の底部に排液口14が形設されている。処理槽10の上部外周には、処理槽10の上部から溢れ出た処理液が流れ込む溢流液槽16が一体的に設けられている。また、この装置は、処理槽10内で複数枚の基板Wを保持するリフタ18を備えており、リフタ18は、処理槽10の内部位置と処理槽10の外部上方位置との間を昇降自在に支持され、リフタ駆動装置(図示せず)によって昇降駆動される。   The substrate processing apparatus includes a processing tank 10 that is open at the top and stores a processing solution. A liquid ejection nozzle 12 is provided at the lower portion of the processing tank 10, and a drain port 14 is formed at the bottom of the processing tank 10. An overflow liquid tank 16 into which the processing liquid overflowing from the upper part of the processing tank 10 flows is integrally provided on the upper outer periphery of the processing tank 10. In addition, the apparatus includes a lifter 18 that holds a plurality of substrates W in the processing tank 10, and the lifter 18 can freely move up and down between an internal position of the processing tank 10 and an external upper position of the processing tank 10. And is driven up and down by a lifter driving device (not shown).

処理槽10は、蓋(図示せず)を開閉させることにより基板Wの搬入および搬出を行うことができるとともに密閉することが可能である処理チャンバ20内に収容されている。処理チャンバ20の内部上方にはガス吹出しノズル22が設けられており、ガス吹出しノズル22に、IPA蒸気供給源に流路接続された蒸気供給管24が連通して接続されている。蒸気供給管24には、開閉制御弁26が介挿して設けられている。また、処理チャンバ20内には、処理槽10の上部開口および溢流液槽16の上部開口面を覆蓋する一対の蓋部材28が配設されている。蓋部材28は、実線で示す閉塞位置と二点鎖線で示す開放位置との間で回動自在に支持されており、蓋部材駆動装置(図示せず)によって開閉駆動される。また、閉塞した状態の蓋部材28の下方に排気口30が設けられ、排気口30には、真空ポンプ等の排気装置に流路接続された排気管32が連通して接続されている。排気管32の途中には、純水供給源に流路接続された純水供給管34が合流するように連通接続されている。排気管32には、純水供給管34との合流位置の上流側および下流側に開閉制御弁36、38がそれぞれ介挿して設けられており、また、純水供給管34にも開閉制御弁40が介挿して設けられている。   The processing tank 10 is accommodated in a processing chamber 20 that can carry in and out the substrate W and can be sealed by opening and closing a lid (not shown). A gas blowing nozzle 22 is provided above the inside of the processing chamber 20, and a vapor supply pipe 24 that is connected to the IPA vapor supply source through a flow path is connected to the gas blowing nozzle 22. An opening / closing control valve 26 is interposed in the steam supply pipe 24. In the processing chamber 20, a pair of lid members 28 that cover the upper opening of the processing tank 10 and the upper opening surface of the overflow liquid tank 16 are disposed. The lid member 28 is rotatably supported between a closed position indicated by a solid line and an open position indicated by a two-dot chain line, and is opened and closed by a lid member driving device (not shown). Further, an exhaust port 30 is provided below the closed lid member 28, and an exhaust pipe 32 connected to a flow path to an exhaust device such as a vacuum pump is connected to the exhaust port 30 in communication therewith. In the middle of the exhaust pipe 32, the pure water supply pipe 34 connected to the pure water supply source is connected so as to join. The exhaust pipe 32 is provided with opening / closing control valves 36 and 38 on the upstream side and the downstream side of the joining position with the pure water supply pipe 34, and the pure water supply pipe 34 is also provided with an opening / closing control valve. 40 is provided with insertion.

液体噴出ノズル12には、開閉制御弁44が介挿された液体供給管42が連通して接続されている。液体供給管42は、ミキシングブロック46の出口側に連通して接続されており、ミキシングブロック46の入口側には、純水供給源に流路接続された純水供給管48が連通して接続されている。純水供給管48には、開閉制御弁50が介挿して設けられており、そのほか、図示していないがレギュレータ(流量調整弁)、流量計、フィルタなどが設けられている。また、ミキシングブロック46には、フッ酸供給装置に流路接続された第1薬液供給管52、アンモニア水と過酸化水素水との混合溶液(以下、「APM液」という)の供給装置に流路接続された第2薬液供給管54、および、塩酸と過酸化水素水との混合溶液(以下、「HPM液」という)の供給装置に流路接続された第3薬液供給管56がそれぞれ連通して接続されている。第1薬液供給管52、第2薬液供給管54および第3薬液供給管56には、開閉制御弁58、60、62がそれぞれ介挿して設けられている。   A liquid supply pipe 42 in which an opening / closing control valve 44 is inserted is connected to the liquid ejection nozzle 12 in communication therewith. The liquid supply pipe 42 is connected to the outlet side of the mixing block 46 and is connected to the inlet side of the mixing block 46 by a pure water supply pipe 48 connected to the pure water supply channel. Has been. The pure water supply pipe 48 is provided with an open / close control valve 50, and in addition, a regulator (flow rate adjusting valve), a flow meter, a filter and the like are provided, although not shown. In addition, the mixing block 46 is supplied to a first chemical solution supply pipe 52 connected to the hydrofluoric acid supply device and to a supply device for a mixed solution of ammonia water and hydrogen peroxide solution (hereinafter referred to as “APM solution”). A second chemical liquid supply pipe 54 connected to the passage and a third chemical liquid supply pipe 56 connected to the flow path to a mixed solution of hydrochloric acid and hydrogen peroxide (hereinafter referred to as “HPM liquid”) communicate with each other. Connected. The first chemical liquid supply pipe 52, the second chemical liquid supply pipe 54, and the third chemical liquid supply pipe 56 are provided with opening / closing control valves 58, 60, and 62, respectively.

処理槽10の底部の排液口14には、急速排液弁(開閉制御弁)66が介挿された排液管64が連通して接続されている。排液口14の径および排液管64の内径は、処理槽10内から処理液を急速に排出することができる程度に大きくされている。また、溢流液槽16の底部には溢流液排出管68が連通しており、溢流液排出管68は、排液管64の途中の、急速排液弁66の下流側に合流するように連通接続されている。溢流液排出管68には、開閉制御弁70が介挿して設けられている。排液管64は、密閉構造を有するドレンボックス72内へ挿入されている。ドレンボックス72には、底部にドレン排出口74が形設されており、ドレン排出口74に、ドレン排出弁78が介挿されたドレン排出管76が連通して接続されている。このドレンボックス72は、処理槽10内から排出される処理液を一時的に貯留することにより処理槽10内からの急速排液を可能とするために設けられており、ドレンボックス72内に溜まった処理液は、ドレン排出口74からドレン排出管76を通して徐々に排出される。   A drainage pipe 64 having a quick drainage valve (opening / closing control valve) 66 interposed therethrough is connected to the drainage port 14 at the bottom of the processing tank 10. The diameter of the drainage port 14 and the inner diameter of the drainage pipe 64 are large enough to allow the processing liquid to be rapidly discharged from the processing tank 10. An overflow liquid discharge pipe 68 communicates with the bottom of the overflow liquid tank 16, and the overflow liquid discharge pipe 68 joins downstream of the quick drain valve 66 in the middle of the drain pipe 64. So that they are connected in communication. The overflow liquid discharge pipe 68 is provided with an open / close control valve 70. The drain pipe 64 is inserted into a drain box 72 having a sealed structure. A drain discharge port 74 is formed at the bottom of the drain box 72, and a drain discharge pipe 76 in which a drain discharge valve 78 is inserted is connected to and connected to the drain discharge port 74. The drain box 72 is provided to enable quick drainage from the processing tank 10 by temporarily storing the processing liquid discharged from the processing tank 10, and is stored in the drain box 72. The treated liquid is gradually discharged from the drain discharge port 74 through the drain discharge pipe 76.

また、ドレンボックス72の内部には、排液管64の下端部が挿入された液溜めトラップ80が配設されている。液溜めトラップ80は、処理槽10内から排液管64を通して排出される処理液82を一旦溜めるものであって、液溜めトラップ80の上端部から溢れ出た処理液82は、ドレンボックス72の内底部に流出して溜まる。そして、液溜めトラップ80に溜められた処理液82中に排液管64の下端部が挿入されることにより、ドレンボックス72の内部雰囲気と排液管64とが液溜めトラップ80の処理液82によってガス流路的に遮断される。この液溜めトラップ80により、ドレンボックス72内部の雰囲気ガスが排液管64を通って空の状態の処理槽10内へ逆流することが防止される。   Further, a liquid trap 80 into which the lower end portion of the drainage pipe 64 is inserted is disposed inside the drain box 72. The liquid storage trap 80 temporarily stores the processing liquid 82 discharged from the processing tank 10 through the drain pipe 64. The processing liquid 82 overflowing from the upper end of the liquid storage trap 80 is stored in the drain box 72. It flows out to the inner bottom and accumulates. Then, the lower end portion of the drain pipe 64 is inserted into the processing liquid 82 stored in the liquid trap 80, whereby the internal atmosphere of the drain box 72 and the drain pipe 64 are connected to the processing liquid 82 of the liquid trap 80. Is blocked in the gas flow path. The liquid trap 80 prevents the atmospheric gas inside the drain box 72 from flowing back into the empty processing tank 10 through the drain pipe 64.

次に、図1に示した構成を備えた基板処理装置を用いて行われる基板の洗浄処理操作の1例について説明する。
図示しない基板搬送ロボットにより複数枚の基板Wが処理チャンバ20内へ搬入されて、基板搬送ロボットから複数枚の基板Wがリフタ18へ受け渡されると、リフタ18が下降して、基板Wが処理槽10内へ挿入される。この際、蓋部材28は、二点鎖線で示すように開放されている。また、処理槽10内にはフッ酸が貯留されており、基板Wは、図1に示したように処理槽10内に保持されてフッ酸中に浸漬させられる。基板Wが処理槽10内に保持されると、蓋部材28が実線で示すように閉塞されて、処理槽10の上部開口および溢流液槽16の上部開口面が蓋部材28によって閉塞される。蓋部材28が閉塞されると、閉じられていた開閉制御弁36、38が開かれ、蓋部材28と処理槽10および溢流液槽16とで囲まれた空間の雰囲気ガスが、排気口30および排気管32を通して排気される。この状態で、基板Wは、処理槽10内のフッ酸中に所定時間だけ浸漬されて処理される。
Next, an example of a substrate cleaning operation performed using the substrate processing apparatus having the configuration shown in FIG. 1 will be described.
When a plurality of substrates W are carried into the processing chamber 20 by a substrate transport robot (not shown) and the plurality of substrates W are transferred from the substrate transport robot to the lifter 18, the lifter 18 is lowered and the substrate W is processed. It is inserted into the tank 10. At this time, the lid member 28 is opened as shown by a two-dot chain line. Further, hydrofluoric acid is stored in the processing tank 10, and the substrate W is held in the processing tank 10 and immersed in the hydrofluoric acid as shown in FIG. When the substrate W is held in the processing tank 10, the lid member 28 is closed as indicated by a solid line, and the upper opening of the processing tank 10 and the upper opening surface of the overflow liquid tank 16 are closed by the lid member 28. . When the lid member 28 is closed, the closed open / close control valves 36 and 38 are opened, and the atmospheric gas in the space surrounded by the lid member 28, the treatment tank 10, and the overflow liquid tank 16 is discharged to the exhaust port 30. And exhausted through the exhaust pipe 32. In this state, the substrate W is processed by being immersed in the hydrofluoric acid in the processing tank 10 for a predetermined time.

フッ酸による基板Wの処理が終了すると、処理槽10内に基板Wが保持されたまま、開閉制御弁58〜62が閉じられた状態で開閉制御弁44、50が開いて、純水供給管48、ミキシングブロック46および液体供給管42を通して液体噴出ノズル12へ純水のみが供給され、液体噴出ノズル12から純水が処理槽10内へ噴出される。処理槽10内へ純水が継続して噴出されることにより、処理槽10の上部からフッ酸が押し出されて、処理槽10の内部が純水で置換される。そして、処理槽10の内部が純水で満たされ、処理槽10の上部から純水が溢れ出る状態で、処理槽10内の純水中に基板Wが浸漬させられて、基板Wが水洗される。このとき、溢流液排出管68に介挿された開閉制御弁68は開いた状態であり(排液管64に介挿された急速排液弁66は閉じている)、処理槽10の上部から溢れ出て溢流液槽16内へ流れ込んだフッ酸や純水は、溢流液排出管68を通ってドレンボックス72内へ流下する。   When the processing of the substrate W with hydrofluoric acid is completed, the open / close control valves 44 and 50 are opened while the open / close control valves 58 to 62 are closed while the substrate W is held in the processing tank 10, and the pure water supply pipe is opened. 48, only pure water is supplied to the liquid jet nozzle 12 through the mixing block 46 and the liquid supply pipe 42, and pure water is jetted from the liquid jet nozzle 12 into the treatment tank 10. By continuously ejecting pure water into the treatment tank 10, hydrofluoric acid is pushed out from the upper part of the treatment tank 10, and the inside of the treatment tank 10 is replaced with pure water. Then, the inside of the processing tank 10 is filled with pure water, and the pure water overflows from the upper part of the processing tank 10, the substrate W is immersed in the pure water in the processing tank 10, and the substrate W is washed with water. The At this time, the open / close control valve 68 inserted in the overflow liquid discharge pipe 68 is in an open state (the quick drain valve 66 inserted in the drain pipe 64 is closed), and the upper part of the processing tank 10. The hydrofluoric acid and pure water that have overflowed and flowed into the overflow liquid tank 16 flow down into the drain box 72 through the overflow liquid discharge pipe 68.

処理槽10内の純水中に基板Wが浸漬されて所定時間、水洗処理が行われると、処理槽10内に基板Wが保持されたまま、液体供給管42に介挿された開閉制御弁44が閉じられて、処理槽10内への純水の供給が停止するとともに、急速排液弁66が開かれて、処理槽10内から排液管64を通して純水が排出される。処理槽10内から排液管64を通って排出された純水は、ドレンボックス72内へ流下してドレンボックス72の内底部に溜まり、ドレンボックス72内からドレン排出管76を通って排出される。   When the substrate W is immersed in pure water in the processing tank 10 and washed with water for a predetermined time, the open / close control valve inserted in the liquid supply pipe 42 while the substrate W is held in the processing tank 10. 44 is closed, the supply of pure water into the processing tank 10 is stopped, and the quick drain valve 66 is opened, so that pure water is discharged from the processing tank 10 through the drain pipe 64. The pure water discharged from the treatment tank 10 through the drain pipe 64 flows down into the drain box 72 and accumulates at the inner bottom of the drain box 72, and is discharged from the drain box 72 through the drain discharge pipe 76. The

処理槽10内からの排水が終わると、急速排液弁66が閉じられ、液体供給管42に介挿された開閉制御弁44が開かれるとともに開閉制御弁50、60が開かれて、所定濃度に調製されたAPM液が液体供給管42を通して液体噴出ノズル12へ供給され、液体噴出ノズル12からAPM液が処理槽10内へ噴出する。そして、処理槽10内がAPM液で満たされ、処理槽10内のAPM液中に基板Wが浸漬させられて、基板WがAPM液で所定時間だけ処理される。   When draining from the treatment tank 10 is finished, the quick drain valve 66 is closed, the open / close control valve 44 inserted in the liquid supply pipe 42 is opened, and the open / close control valves 50, 60 are opened, so that the predetermined concentration is reached. The prepared APM liquid is supplied to the liquid ejection nozzle 12 through the liquid supply pipe 42, and the APM liquid is ejected from the liquid ejection nozzle 12 into the processing tank 10. Then, the inside of the processing tank 10 is filled with the APM liquid, the substrate W is immersed in the APM liquid in the processing tank 10, and the substrate W is processed with the APM liquid for a predetermined time.

APM液による基板Wの処理が終了すると、処理槽10内に基板Wが保持されたまま、開閉制御弁44、50、58〜62が閉じられた状態にして、急速排液弁66が開かれ、処理槽10内から排液管64を通してAPM液が急速に排出される。処理槽10内から排液管64を通って排出されたAPM液は、ドレンボックス72内へ流下して、液溜めトラップ80に流入し、液溜めトラップ80から溢れ出てドレンボックス72の内底部に溜まる。このとき、密閉されたドレンボックス72の内部は、ドレンボックス72内へのAPM液の流入によって一時的に加圧状態となるが、液溜めトラップ80に溜まったAPM液中に排液管64の下端部が挿入されていることにより、ドレンボックス72の内部雰囲気と排液管64とがガス流路的に遮断される。このため、ドレンボックス72内においてAPM液から蒸発したアンモニアガスが、排液管64を通って空の状態となった処理槽10内へ逆流することが防止される。   When the processing of the substrate W with the APM liquid is completed, the rapid drainage valve 66 is opened with the open / close control valves 44, 50, 58 to 62 being closed while the substrate W is held in the processing tank 10. The APM liquid is rapidly discharged from the processing tank 10 through the drain pipe 64. The APM liquid discharged from the processing tank 10 through the drain pipe 64 flows into the drain box 72 and flows into the liquid trap 80, overflows from the liquid trap 80, and reaches the inner bottom of the drain box 72. It collects in. At this time, the inside of the sealed drain box 72 is temporarily pressurized due to the inflow of the APM liquid into the drain box 72, but the drain pipe 64 is contained in the APM liquid collected in the liquid trap 80. By inserting the lower end, the internal atmosphere of the drain box 72 and the drainage pipe 64 are shut off in a gas flow path. For this reason, the ammonia gas evaporated from the APM liquid in the drain box 72 is prevented from flowing back into the processing tank 10 that has become empty through the drain pipe 64.

処理槽10内からのAPM液の排出が終わると、急速排液弁66が閉じられ、開閉制御弁44、50が開かれて、液体噴出ノズル12へ純水のみが供給され、液体噴出ノズル12から純水が処理槽10内へ噴出する。そして、処理槽10内が純水で満たされ、処理槽10の上部から純水を溢れ出させながら、処理槽10内の純水中に基板Wが浸漬させられて、基板Wが水洗される。そして、所定時間、基板Wが水洗処理された後に、処理槽10内に基板Wが保持されたまま、液体供給管42に介挿された開閉制御弁44が閉じられて、処理槽10内への純水の供給が停止し、急速排液弁66が開かれて、処理槽10内から排液管64を通して純水が排出される。   When the discharge of the APM liquid from the processing tank 10 is finished, the quick drain valve 66 is closed, the open / close control valves 44 and 50 are opened, and only pure water is supplied to the liquid jet nozzle 12. The pure water is ejected into the treatment tank 10 from the inside. Then, the inside of the processing tank 10 is filled with pure water, and the substrate W is immersed in the pure water in the processing tank 10 while the pure water overflows from the upper part of the processing tank 10 to wash the substrate W with water. . Then, after the substrate W is washed with water for a predetermined time, the open / close control valve 44 inserted in the liquid supply pipe 42 is closed while the substrate W is held in the processing bath 10, and the processing bath 10 enters the processing bath 10. The supply of pure water is stopped, the quick drain valve 66 is opened, and pure water is discharged from the treatment tank 10 through the drain pipe 64.

処理槽10内からの排水が終わると、急速排液弁66が閉じられ、液体供給管42に介挿された開閉制御弁44が開かれるとともに開閉制御弁50、62が開かれて、所定濃度に調製されたHPM液が液体供給管42を通して液体噴出ノズル12へ供給され、液体噴出ノズル12からHPM液が処理槽10内へ噴出する。そして、処理槽10内がHPM液で満たされ、処理槽10内のHPM液中に基板Wが浸漬させられて、基板WがHPM液で所定時間だけ処理される。   When drainage from the treatment tank 10 is finished, the quick drain valve 66 is closed, the open / close control valve 44 inserted in the liquid supply pipe 42 is opened, and the open / close control valves 50 and 62 are opened to have a predetermined concentration. The HPM liquid thus prepared is supplied to the liquid ejection nozzle 12 through the liquid supply pipe 42, and the HPM liquid is ejected from the liquid ejection nozzle 12 into the processing tank 10. Then, the inside of the processing tank 10 is filled with the HPM liquid, the substrate W is immersed in the HPM liquid in the processing tank 10, and the substrate W is processed with the HPM liquid for a predetermined time.

HPM液による基板Wの処理が終了すると、処理槽10内に基板Wが保持されたまま、開閉制御弁44、50、58〜62が閉じられた状態にして、急速排液弁66が開かれ、処理槽10内から排液管64を通してHPM液が急速に排出される。処理槽10内から排液管64を通って排出されたHPM液は、ドレンボックス72内へ流下して、液溜めトラップ80に流入し、液溜めトラップ80から溢れ出てドレンボックス72の内底部に溜まる。このとき、密閉されたドレンボックス72の内部は、ドレンボックス72内へのHPM液の流入によって一時的に加圧状態となるが、上記したAPM液の排出時と同様に、ドレンボックス72の内部雰囲気と排液管64とがガス流路的に遮断されるため、ドレンボックス72内においてHPM液から蒸発した塩化水素が、排液管64を通って空の状態となった処理槽10内へ逆流することが防止される。   When the processing of the substrate W by the HPM liquid is completed, the rapid drainage valve 66 is opened with the open / close control valves 44, 50, 58 to 62 being closed while the substrate W is held in the processing tank 10. The HPM liquid is rapidly discharged from the processing tank 10 through the drain pipe 64. The HPM liquid discharged from the treatment tank 10 through the drain pipe 64 flows down into the drain box 72 and flows into the liquid trap 80, overflows from the liquid trap 80, and flows into the inner bottom of the drain box 72. It collects in. At this time, the inside of the sealed drain box 72 is temporarily pressurized due to the inflow of the HPM liquid into the drain box 72, but the inside of the drain box 72 is the same as when the APM liquid is discharged. Since the atmosphere and the drainage pipe 64 are blocked in a gas flow path, the hydrogen chloride evaporated from the HPM liquid in the drain box 72 passes through the drainage pipe 64 and enters the treatment tank 10 that has become empty. Backflow is prevented.

処理槽10内からのHPM液の排出が終わると、急速排液弁66を閉じ、開閉制御弁44、50を開いて、液体噴出ノズル12へ純水のみを供給し、液体噴出ノズル12から純水を処理槽10内へ噴出させる。そして、処理槽10内を純水で満たし、処理槽10の上部から純水を溢れ出させながら、処理槽10内の純水中に基板Wが浸漬させられて、基板Wが水洗される。そして、所定時間、基板Wが水洗処理された後に、処理槽10内に基板Wが保持されたまま、液体供給管42に介挿された開閉制御弁44が閉じられて、処理槽10内への純水の供給が停止し、急速排液弁66が開かれて、処理槽10内から排液管64を通して純水が排出される。   When the discharge of the HPM liquid from the processing tank 10 is finished, the quick drain valve 66 is closed, the open / close control valves 44 and 50 are opened, only pure water is supplied to the liquid jet nozzle 12, and pure water is supplied from the liquid jet nozzle 12. Water is ejected into the treatment tank 10. Then, the inside of the processing tank 10 is filled with pure water, and the substrate W is immersed in the pure water in the processing tank 10 while the pure water overflows from the upper part of the processing tank 10, and the substrate W is washed with water. Then, after the substrate W is washed with water for a predetermined time, the open / close control valve 44 inserted in the liquid supply pipe 42 is closed while the substrate W is held in the processing bath 10, and the processing bath 10 enters the processing bath 10. The supply of pure water is stopped, the quick drain valve 66 is opened, and pure water is discharged from the treatment tank 10 through the drain pipe 64.

処理槽10内からの排水が終わると、排気管32に介挿された開閉制御弁38が閉じられて、蓋部材28と処理槽10および溢流液槽16とで囲まれた空間からの排気が停止する。続いて、蓋部材28が図1中の二点鎖線で示すように開放された後、開閉制御弁26が開かれ、蒸気供給管24を通してIPA蒸気がガス吹出しノズル22へ供給され、ガス吹出しノズル22から処理チャンバ20内へIPA蒸気が吐出する。そして、IPA蒸気の吐出を継続しつつ、リフタ18が上昇して基板Wが処理槽10の内部から処理槽10の外部上方へ移動する。この間に、基板Wの表面上でIPA蒸気が凝縮して、基板Wに付着した純水がIPAに置換されていく。そして、ガス吹出しノズル22からのIPA蒸気の吐出が停止した後、例えば、窒素ガスだけがガス吹出しノズル22へ供給され、ガス吹出しノズル46から窒素ガスが処理チャンバ20内へ噴出して処理チャンバ20内が窒素ガスでパージされ、その後に、排気口30および排気管32を通して処理チャンバ20の内部が真空排気され、処理チャンバ20内に保持された基板Wが速やかに減圧乾燥させられる。これにより、基板Wの表面からIPAが完全に蒸発して除去され、基板Wの乾燥が終了する。   When drainage from the processing tank 10 is finished, the open / close control valve 38 inserted in the exhaust pipe 32 is closed, and the exhaust from the space surrounded by the lid member 28, the processing tank 10 and the overflow liquid tank 16 is performed. Stops. Subsequently, after the lid member 28 is opened as shown by a two-dot chain line in FIG. 1, the open / close control valve 26 is opened, and the IPA vapor is supplied to the gas blowing nozzle 22 through the vapor supply pipe 24. IPA vapor is discharged from 22 into the processing chamber 20. Then, while continuing the discharge of the IPA vapor, the lifter 18 rises and the substrate W moves from the inside of the processing tank 10 to the outside of the processing tank 10. During this time, the IPA vapor is condensed on the surface of the substrate W, and the pure water adhering to the substrate W is replaced with IPA. Then, after the discharge of the IPA vapor from the gas blowing nozzle 22 is stopped, for example, only nitrogen gas is supplied to the gas blowing nozzle 22, and nitrogen gas is blown into the processing chamber 20 from the gas blowing nozzle 46. The inside is purged with nitrogen gas, and then the inside of the processing chamber 20 is evacuated through the exhaust port 30 and the exhaust pipe 32, and the substrate W held in the processing chamber 20 is quickly dried under reduced pressure. Thereby, IPA is completely evaporated and removed from the surface of the substrate W, and drying of the substrate W is completed.

基板Wの乾燥が終了すると、リフタ18から図示しない基板搬送ロボットへ基板Wが受け渡されて、基板搬送ロボットにより基板Wが処理チャンバ20内から搬出される。基板Wが処理チャンバ20内から搬出されると、次に処理すべき基板Wが処理チャンバ20内へ搬入されてくるまでの間に、開閉制御弁36、40が開かれて(開閉制御弁38は閉じている)、純水供給管34を通して排気管32内へ純水が供給され、排気管32の内部が純水で洗浄される。この洗浄操作により、基板Wの薬液処理中において排気管32内で雰囲気中に含まれるミストやガス中のフッ酸や塩酸とアンモニアとが反応して塩が生成したとしても、生成した塩は、純水供給管34を通して排気管32内へ供給される純水によって洗い流され、排気管32内から除去される。このため、排気管32内に塩が蓄積する心配が無くなり、パーティクルの発生が防止される。   When the drying of the substrate W is completed, the substrate W is delivered from the lifter 18 to a substrate transport robot (not shown), and the substrate W is unloaded from the processing chamber 20 by the substrate transport robot. When the substrate W is unloaded from the processing chamber 20, the open / close control valves 36 and 40 are opened (open / close control valve 38) until the next substrate W to be processed is loaded into the processing chamber 20. Is closed), pure water is supplied into the exhaust pipe 32 through the pure water supply pipe 34, and the inside of the exhaust pipe 32 is washed with pure water. Even if the mist contained in the atmosphere in the exhaust pipe 32 and the hydrofluoric acid or hydrochloric acid in the gas react with ammonia during the chemical treatment of the substrate W by this cleaning operation, the generated salt is The pure water supplied into the exhaust pipe 32 through the pure water supply pipe 34 is washed away and removed from the exhaust pipe 32. For this reason, there is no fear that salt accumulates in the exhaust pipe 32, and generation of particles is prevented.

なお、上記した基板の洗浄処理操作は1例であり、この発明に係る基板処理装置を使用した基板処理は、種々の形態で実施し得る。   The above-described substrate cleaning processing operation is an example, and the substrate processing using the substrate processing apparatus according to the present invention can be implemented in various forms.

この発明の実施形態の1例を示し、基板処理装置の概略構成を示す模式図である。It is a schematic diagram which shows one example of embodiment of this invention and shows schematic structure of a substrate processing apparatus.

符号の説明Explanation of symbols

10 処理槽
12 液体噴出ノズル
14 排液口
16 溢流液槽
18 リフタ
20 処理チャンバ
22 ガス吹出しノズル
24 蒸気供給管
26、36、38、40、44、50、58、60、62、70 開閉制御弁
28 蓋部材
30 排気口
32 排気管
34 純水供給管
42 液体供給管
46 ミキシングブロック
48 純水供給管
52、54、56 薬液供給管
64 排液管
66 急速排液弁(開閉制御弁)
68 溢流液排出管
72 ドレンボックス
74 ドレン排出口
76 ドレン排出管
78 ドレン排出弁
80 液溜めトラップ
82 処理液
W 基板
DESCRIPTION OF SYMBOLS 10 Treatment tank 12 Liquid ejection nozzle 14 Drain outlet 16 Overflow liquid tank 18 Lifter 20 Processing chamber 22 Gas blowing nozzle 24 Steam supply pipe 26, 36, 38, 40, 44, 50, 58, 60, 62, 70 Open / close control Valve 28 Lid member 30 Exhaust port 32 Exhaust pipe 34 Pure water supply pipe 42 Liquid supply pipe 46 Mixing block 48 Pure water supply pipe 52, 54, 56 Chemical liquid supply pipe 64 Drainage pipe 66 Rapid drainage valve (open / close control valve)
68 Overflow liquid discharge pipe 72 Drain box 74 Drain discharge port 76 Drain discharge pipe 78 Drain discharge valve 80 Reservoir trap 82 Treatment liquid W Substrate

Claims (3)

処理液により基板に対し処理を行う基板処理装置において、
上部に開口を有し処理液を貯留する処理槽と、
前記処理槽内で基板を保持する基板保持手段と、
前記処理槽内へ処理液を供給する処理液供給手段と、
前記処理槽の上部開口の上方に排気口が設けられ、前記排気口に連通接続された排気管を通して前記処理槽の上部開口上の雰囲気を排気する排気手段と、
前記排気管の途中に合流するように純水供給管が連通接続され、前記純水供給管を通して前記排気管内の、前記純水供給管との合流位置から前記排気口までの部分に洗浄用純水を供給する純水供給手段と、
を備えることを特徴とする基板処理装置。
In a substrate processing apparatus for processing a substrate with a processing liquid,
A treatment tank having an opening in the upper part and storing a treatment liquid;
Substrate holding means for holding the substrate in the processing tank;
Treatment liquid supply means for supplying a treatment liquid into the treatment tank;
An exhaust port provided above the upper opening of the treatment tank, and an exhaust means for exhausting the atmosphere on the upper opening of the treatment tank through an exhaust pipe connected to the exhaust port;
A pure water supply pipe is connected so as to join in the middle of the exhaust pipe, and through the pure water supply pipe, a pure water for cleaning is provided in a portion from the joining position with the pure water supply pipe to the exhaust port in the exhaust pipe. Pure water supply means for supplying water;
A substrate processing apparatus comprising:
前記処理槽の上部開口に対して開閉自在である蓋部材を備え、前記排気口が、閉塞された前記蓋部材と前記処理槽の上部開口とで囲まれた空間に配設された請求項1に記載の基板処理装置。 2. A lid member that can be opened and closed with respect to an upper opening of the processing tank is provided, and the exhaust port is disposed in a space surrounded by the closed lid member and the upper opening of the processing tank. 2. The substrate processing apparatus according to 1. 前記純水供給手段は、処理が終わった基板が前記処理槽内から搬出され次に処理すべき基板が前記処理槽内へ搬入されるまでの間に前記排気管内へ純水を供給する請求項1または請求項2に記載の基板処理装置。 The pure water supply means supplies pure water into the exhaust pipe until a substrate that has been processed is unloaded from the processing tank and a substrate to be processed next is loaded into the processing tank. The substrate processing apparatus according to claim 1 or 2.
JP2004344530A 2004-11-29 2004-11-29 Substrate processing equipment Expired - Fee Related JP4347787B2 (en)

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